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"20-nm In_0.8Ga_0.2As MOSHEMT MMIC Technology on Silicon."

Axel Tessmann et al. (2019)

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DOI: 10.1109/JSSC.2019.2915161

access: closed

type: Journal Article

metadata version: 2020-08-30

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Axel Tessmann, Arnulf Leuther, Felix Heinz, Frank Bernhardt, Laurenz John, Hermann Massler, Lukas Czornomaz, Thomas Merkle:
20-nm In_0.8Ga_0.2As MOSHEMT MMIC Technology on Silicon. IEEE J. Solid State Circuits 54(9): 2411-2418 (2019)

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