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"Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide ..."

Hiroki Inoue et al. (2012)

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DOI: 10.1109/JSSC.2012.2198969

access: closed

type: Journal Article

metadata version: 2020-08-30

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Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, Yutaka Okazaki, Toshinari Sasaki, Kousei Noda, Daisuke Matsubayashi, Takahiko Ishizu, Tatsuya Onuki, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Jun Koyama, Shunpei Yamazaki:
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. IEEE J. Solid State Circuits 47(9): 2258-2265 (2012)

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