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"SAW characteristics of GaN layers with surfaces exposed by dry etching."

Kazumi Nishimura et al. (2005)

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DOI: 10.1587/ELEX.2.501

access: open

type: Journal Article

metadata version: 2021-02-12

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  dblp key:
  - journals/ieiceee/NishimuraSYHH05
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  - https://dblp.org/rec/journals/ieiceee/NishimuraSYHH05
Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki, Kohji Hohkawa:
SAW characteristics of GaN layers with surfaces exposed by dry etching. IEICE Electron. Express 2(19): 501-505 (2005)

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