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"The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation."
Michiel Vandemaele et al. (2020)
- Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer:
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS 2020: 1-7
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