More Web Proxy on the site http://driver.im/

default search action

combined dblp search
author search
venue search
publication search

ask others

"Role of electron and hole trapping in the degradation and breakdown of ..."

David Z. Gao et al. (2018)

> Home

Details and statistics

DOI: 10.1109/IRPS.2018.8353602

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/GaoSESPL18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/GaoSESPL18
David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher:
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS 2018: 5

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.