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"DC and linearity performance of a novel Si0.6Ge0.4/Ge Dopingless Tunnel ..."

Suruchi Sharma, Rikmantra Basu, Baljit Kaur (2021)

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DOI: 10.1109/ISDCS52006.2021.9397899

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Suruchi Sharma, Rikmantra Basu, Baljit Kaur:
DC and linearity performance of a novel Si0.6Ge0.4/Ge Dopingless Tunnel FET for ultra-low voltage applications. ISDCS 2021: 1-5

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