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"Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical ..."

Hiraki Inoue et al. (2024)

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DOI: 10.1109/IMW59701.2024.10536958

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-04

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  - conf/imw2/InoueHMKSIKOASMKMKIY24
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Hiraki Inoue, Takeya Hirose, Toshiki Mizuguchi, Yusuke Komura, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Takanori Matsuzaki, Hajime Kimura, Makoto Ikeda, Shunpei Yamazaki:
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. IMW 2024: 1-4

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