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"Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon ..."

Jeffrey A. Smith et al. (2018)

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DOI: 10.1109/DRC.2018.8442231

access: closed

type: Conference or Workshop Paper

metadata version: 2023-01-31

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Jeffrey A. Smith, Hideki Takeuchi, Robert Stephenson, Yi-Ann Chen, Marek Hytha, Robert J. Mears, Suman Datta:
Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack. DRC 2018: 1-2

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