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"Enhancement of In2O3 Field-Effect Mobility Up To 152 ..."

Zehao Lin et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631497

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, Peide D. Ye:
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm².V^-1·s^-1Using HZO-Based Higher-k Linear Dielectric. VLSI Technology and Circuits 2024: 1-2

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