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"A 290MV Ultra-Low Voltage One-Port SRAM Compiler Design Using a 12T Write ..."

Mahmut E. Sinangil et al. (2018)

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DOI: 10.1109/VLSIC.2018.8502419

access: closed

type: Conference or Workshop Paper

metadata version: 2019-07-10

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Mahmut E. Sinangil, Yen-Ting Lin, Hung-Jen Liao, Jonathan Chang:
A 290MV Ultra-Low Voltage One-Port SRAM Compiler Design Using a 12T Write Contention and Read Upset Free Bit-Cell in 7NM FinFET Technology. VLSI Circuits 2018: 13-14

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