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DRC 2023: Santa Barbara, CA, USA
- Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. IEEE 2023, ISBN 979-8-3503-2310-8
- Yuan Xing, Feng Zhao:
Natural Organic Fructose-based Nonvolatile Resistive Switching Memory for Environmental Sustainability in Computing. 1-2 - E. White
, Ashwin Tunga, Nicholas C. Miller, Matt Grupen, John D. Albrecht, Shaloo Rakheja:
Large-Signal Modeling of GaN HEMTs using Fermi Kinetics and Commercial Hydrodynamics Transport. 1-2 - Yue Ma
$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length. 1-2 - Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin:
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. 1-2 - Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren
Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown. 1-2 - Sebastian Lukas, Vikas Jangra
Freely Suspended Platinum Diselenide Membranes without Polymer Support for Piezoresistive Pressure Sensing. 1-2 - Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Wassem, Wenjuan Zhu, Xiuling Li:
$\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics. 1-2 - Tae Ryong Kim, Atanu K. Saha, Sumeet Kumar Gupta:
Analysis of Polarization Switching in HZO/ZrO2 (HZZ) Nanolaminates based on Sub-lattice Phase-field Model. 1-2 - Soundarya Nagarajan
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. 1-2 - Pradyot Yadav
First Demonstration of GaN RF HEMTs on Engineered Substrate. 1-2 - Shamiul Alam
Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-Cryotron. 1-2 - Daniel M. Fleetwood:
Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. 1-2 - Cristian J. Herrera-Rodriguez, Atsushi Shimbori, Timothy A. Grotjohn:
$\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD Modelling. 1-2 - Olivier Maher, Nele Harnack, Giacomo Indiveri, Marilyne Sousa, Bernd Gotsmann
Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks. 1-2 - Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao:
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. 1-2 - Shivendra Singh Parihar, Simon Thomann, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch:
5nm FinFET Cryogenic SRAM Evaluation for Quantum Computing. 1-2 - S. Shankar, Z. Hao, M. Hatefipour, W. Strickland, T. Shaw, J. Shabani:
Josephson parametric amplifiers for rapid, high-fidelity measurement of solid-state qubits. 1-2 - Puneet Srivastava, David F. Brown, Louis Mt. Pleasant, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, John R. Jones, Wenhua Zhu, Hong M. Lu, Douglas M. Dugas, Kanin Chu:
90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and Beyond. 1-2 - Solomon Amsalu Chekol, Rainer Waser, Susanne Hoffmann-Eifert:
Controllability of Relaxation Behavior in Ag-based Diffusive Memristors. 1-2 - Ashwani Kumar, Sai Sukruth Bezugam
RRAM Based On-Sensor Visual Data Preprocessing for Efficient Image Classification. 1-2 - Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi:
Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs. 1-2 - S. Ahmed, A. E. Islam, Daniel Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green:
The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. 1-2 - Logan Whitaker, Brian Markman, Mark J. W. Rodwell:
Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications. 1-2 - Sajal Islam
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. 1-2 - Woo-Seok Kim, Young-Eun Choi, Myoung Kim, Min Woo Ryu, Kyung Rok Kim:
Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance Characteristics. 1-2 - Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra:
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. 1-2 - F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper:
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. 1-2 - Matthias Sinnwell
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. 1-2 - Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. 1-2 - Adam Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, Daniel Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green:
High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates. 1-2 - Sung Jin Yang, Yuqian Gu, Deji Akinwande:
Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride Atomristor. 1-2 - Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach:
Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. 1-2 - Yifan Yao, Hongjian Li
Size dependent characteristics of AlGaN-based ultraviolet micro-LEDs. 1-2 - Shubham Mondal, Ding Wang, Jiangnan Liu, Yixin Xiao, Ping Wang, Zetian Mi:
ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel. 1-2 - Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim:
Low Power and High Density Ternary-SRAM for Always-on Applications. 1-2 - Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, Peide D. Ye, Sumeet Kumar Gupta:
FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. 1-2 - Nicholas C. Miller, Matt Grupen, John D. Albrecht:
Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport. 1 - Kai Ni, Yi Xiao, Shan Deng, Vijaykrishnan Narayanan:
Computational Associative Memory Powered by Ferroelectric Memory. 1-2 - Agata Piacentini, Dmitry K. Polyushkin, Burkay Uzlu, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Thomas Mueller, Max Christian Lemme, Daniel Neumaier:
Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2. 1-2 - Bhaskaran Muralidharan:
Quantum transport simulations for the next decade: Exploiting quantum topology in emerging 2D-devices. 1-2 - Yu Duan, Andy Xie, Patrick Fay:
1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination. 1-2 - Paula Palacios
Fully Integrated Flexible RF Detectors in MoS2 and Graphene based MMIC. 1-2 - Sijay Huang
Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design. 1-2 - Jeremiah Williams, Nolan S. Hendricks, Weisong Wang, Aaron Adams, Joshua Piel, Daniel Dryden, Kyle J. Liddy, Nicholas Sepelak, Bradley Morell, Adam Miesle, Ahmad Islam, Andrew J. Green:
Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage. 1-2 - Sumaiya Wahid, Lauren Hoang, Alwin Daus, Eric Pop
Up to 100-fold Improvement of Threshold Voltage Stability in ITO Transistors. 1-2 - Renjith Sasikumar, K. Lakshmi Ganapathi, Durgamadhab Misra, Revathy Padmanabhan:
Modeling of variability-aware memristive neural networks. 1-2 - Umeshwarnath Surendranathan, Horace Wilson, Biswajit Ray:
Technology scaling effects on SRAM-PUF reliability under ionizing radiation. 1-2 - Wenwen Li, Dong Ji:
Small Signal Analysis of GaN IMPATT Diodes for W-band and Sub-THz Wave Generation. 1-2 - Lingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu:
A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability. 1-2 - Ankit Kumar, Arnab Pal, Kamyar Parto, Wei Cao, Kaustav Banerjee:
Exploration and Exploitation of Strain Engineering in 2D-FETs. 1-2 - Marc Jaikissoon, Jung-Soo Ko, Eric Pop
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. 1-2 - Zheng Sun, Cindy Chen, Joshua A. Robinson, Zhihong Chen, Jörg Appenzeller:
A mobility study of monolayer MoS2 on low-κ/high-κ dielectrics. 1-2
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