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BCICTS 2022: Phoenix, AZ, USA
- 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. IEEE 2022, ISBN 978-1-6654-9132-7
- Xiaodi Jin, Guangsheng Liang
, Yves Zimmermann, Gerhard Fischer, Christoph Weimer
Thermal impedance of SiGe HBTs: Characterization and modeling. 1-4 - Alvin J. Joseph, Vibhor Jain, John J. Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu:
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. 1-6 - Michael Schröter, Markus Müller, Mario Krattenmacher:
Device modeling tools and their application to SiGe HBT development. 1-8 - Kenichi Okada:
Maximizing Energy Efficiency in Sub-THz Radio Communication and Prospective toward 6G. 1-4 - Kadaba R. Lakshmikumar, Alexander Kurylak, Romesh Kumar Nandwana, Bibhu Das, Joe Pampanin, Vito Boccuzzi, Pavan Kumar Hanumolu:
High-Performance CMOS TIA for Data Center Optical Interconnects. 9-16 - Kozo Makiyama, Shigeki Yoshida, Ken Nakata, Yasuyuki Miyamoto:
Innovative RF Device Technologies for Advanced Information and Communications Network Society. 17-20 - Ryan Fang, Dylan Ma, Ujwal Radhakrishna
MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects. 21-24 - Jinyuan Cui, Qi-Jun Zhang:
Neural Network-based Methods for Microwave Active Device Modeling. 25-28 - Ivan Berdalovic, Mirko Poljak
Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs. 29-32 - Sruthi M. P, Nidhin Kurian Kalarickal, Ajay Shanbhag, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta:
Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs. 33-36 - Peter Toth, Lasse Cordes
A 13 GHz PA with Amplitude Modulation for Entanglement Generation in Multi-Qubit 171Yb+ Gates of an Ion-Trapped Quantum Computer. 37-40 - Ata S. Nazhad, Amirreza Alizadeh, Milad Frounchi, John D. Cressler, Bertan Bakkaloglu, Sayfe Kiaei:
A 5-GHz Injection-Locked Delay Cell with 10-25 ns Adjustable Group-Delay in a 130-nm SiGe BiCMOS Technology. 41-44 - Rabia Fatima Riaz
A Multiple Input and Gain Adjustable Phase Detector in 130 nm SiGe BiCMOS Technology. 45-48 - Florian Vogelsang, Christian Bredendiek, Jan Schopfel, Holger Rücker, Nils Pohl:
A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology. 49-52 - Everett O'Malley, James F. Buckwalter:
A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques. 53-56 - Vincent Lammert, Michael L. Leyrer, Vadim Issakov:
A D-Band Transceiver with On-Chip Multi-Port Radiators and Leakage Cancellation in 45nm SOI. 57-61 - Nelson Sepúlveda-Ramos, Jeffrey W. Teng
Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers. 62-65 - Harrison Lee, Arya Moradinia, Jeffrey W. Teng
Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells. 66-69 - Guofu Niu:
Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies. 70-77 - Farzana Yasmin, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta:
Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors. 78-81 - Saurabh Sirohi, Beng Woon Lim, Ajay Raman, Frederick A. Anderson:
Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs. 82-85 - Kyle M. Bothe, Matthew R. King
Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate. 90-93 - Keiichi Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin:
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications. 94-98 - Wu Lu:
Ultrawide Bandgap Nitride Semiconductor Heterojunction Field Effect Transistors. 99-103 - Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata:
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network. 104-107 - Sara Hamzeloui
Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures. 108-111 - Colombo R. Bolognesi, Akshay M. Arabhavi, Romain Hersent
InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver. 112-119 - Timothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz:
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process. 120-123 - Yerzhan Kudabay, Vadim Issakov:
A 0.03 mm2 Inductorless 50 Gb/s Multiplexer for Josephson Arbitrary Waveform Synthesizers. 124-127 - Kevin W. Kobayashi, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden:
High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz. 128-131 - Ghazal Movaghar, Junqian Liu
Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias. 132-135 - Festim Iseini, Andrea Malignaggi, Falk Korndörfer, Mesut Inac, Gerhard Kahmen:
Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology. 136-139 - Mantas Sakalas, Paulius Sakalas:
A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology. 140-143 - Qiang Yu, Derek Thomson, Han Wui Then, Alvaro Latorre-Rey, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Said Rami:
A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. 144-147 - Matthew L. Speir, Michael Litchfield:
Reactively Matched 2-18 GHz Broadband GaN-on-SiC MMIC Driver Amplifier. 148-151 - Teruo Jyo, Hiroshi Hamada, Munehiko Nagatani, Hitoshi Wakita, Ibrahim Abdo, Miwa Mutoh, Yuta Shiratori, Kenichi Okada, Atsushi Shirane, Hiroyuki Takahashi:
A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT. 152-155 - Toshifumi Nakatani, Mohammad Ali Zolfaghari, Jonmei J. Yan, Peter M. Asbeck:
A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology. 156-159 - Rémy Leblanc, Peter Frijlink, Marc Rocchi:
Sub-100nm GaN/Si MMIC processes for 6G telecommunications. 160-165 - Jeff Shih-Chieh Chien, Wonho Lee, James F. Buckwalter:
A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT. 166-169 - Matt Torpey, Austin Tucker:
Low Loss, High Linearity Switches for Wideband Applications. 170-173 - Anton N. Atanasov, Wasam R. A. Mukhtar Ahmad, Mark S. Oude Alink
The Load-Modulated Linearizer: A Technique for Intermodulation Cancellation in PA Systems. 174-177 - Sam Razavian, Sidharth Thomas, Mostafa Hosseini, Aydin Babakhani:
A 0.4 THz Efficient OOK/FSK Wireless Transmitter Enabling 3 Gbps at 20 meters. 178-181 - Arya Moradinia, Clifford D. Y. Cheon, Christopher T. Coen, Nelson E. Lourenco, Adilson S. Cardoso, John D. Cressler:
A 42.5-51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator. 183-186 - Pilsoon Choi, Ryan Fang, Lan Wei, Slim Boumaiza, Ujwal Radhakrishna
Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model. 187-190 - Utku Soylu, Amirreza Alizadeh, Munkyo Seo, Mark J. W. Rodwell:
A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. 191-194 - Justin Romstadt
A SiGe D-Band x12 Frequency Multiplier with Gilbert Cell-Based Tripler. 195-198 - Sidharth Thomas, Sam Razavian, Wei Sun, Anthony D. Kim, Yu Wu, Benjamin S. Williams, Aydin Babakhani:
Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOS. 199-202 - Soheil Nouri, Amirreza Ghadimi Avval
A Review of Physics-based Modeling of Millimeter-Wave Transistors. 203-207 - Markus Müller, Tobias Nardmann, Maximilian Froitzheim, Michael Schröter:
Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs. 208-211 - Tobias Nardmann, Plamen Kolev, Nick Tao, Michael Schröter:
Geometry scalable compact modeling of GaAs HBTs. 212-215 - Christoph Weimer
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. 216-223 - Sandip Ghosh, Shon Yadav, Anjan Chakravorty:
Modeling Dynamic Lateral Current Crowding in SiGe HBTs. 224-227 - Grégoire Caron, Anatoli B. Juditsky, Nicolas Guitard, Didier Céli:
Recovery of Intrinsic Heterojunction Bipolar Transistors Profiles by Neural Networks. 228-231 - Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, Ian McCallum-Cook, M. Yu, R. Phelps, Adam W. DiVergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, John J. Pekarik, Qidi Liu:
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. 232-235
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