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26 pages, 3719 KiB  
Article
Design of Multi-Sourced MIMO Multiband Hybrid Wireless RF-Perovskite Photovoltaic Energy Harvesting Subsystems for Iots Applications in Smart Cities
by Fanuel Elias, Sunday Ekpo, Stephen Alabi, Mfonobong Uko, Sunday Enahoro, Muhammad Ijaz, Helen Ji, Rahul Unnikrishnan and Nurudeen Olasunkanmi
Technologies 2025, 13(3), 92; https://doi.org/10.3390/technologies13030092 (registering DOI) - 1 Mar 2025
Abstract
Energy harvesting technology allows Internet of Things (IoT) devices to be powered continuously without needing battery charging or replacement. In addressing existing and emerging massive IoT energy supply challenges, this paper presents the design of multi-sourced multiple input and multiple output (MIMO) multiband [...] Read more.
Energy harvesting technology allows Internet of Things (IoT) devices to be powered continuously without needing battery charging or replacement. In addressing existing and emerging massive IoT energy supply challenges, this paper presents the design of multi-sourced multiple input and multiple output (MIMO) multiband hybrid wireless RF-perovskite photovoltaic energy harvesting subsystems for IoT application. The research findings evaluate the efficiency and power output of different RF configurations (1 to 16 antennas) within MIMO RF subsystems. A Delon quadruple rectifier in the RF energy harvesting system demonstrates a system-level power conversion efficiency of 51%. The research also explores the I-V and P-V characteristics of the adopted perovskite tandem cell. This results in an impressive array capable of producing 6.4 V and generating a maximum power of 650 mW. For the first time, the combined mathematical modelling of the system architecture is presented. The achieved efficiency of the combined system is 90% (for 8 MIMO) and 98% (for 16 MIMO) at 0 dBm input RF power. This novel study holds great promise for next-generation 5G/6G smart IoT passive electronics. Additionally, it establishes the hybrid RF-perovskite energy harvester as a promising, compact, and eco-friendly solution for efficiently powering IoT devices in smart cities. This work contributes to the development of sustainable, scalable, and smart energy solutions for IoT integration into smart city infrastructures. Full article
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Graphical abstract

Graphical abstract
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<p>Common types of ambient energy harvesting.</p>
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<p>RF energy harvesting block diagram.</p>
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<p>Proposed RF−perovskite multi-source energy harvesting block diagram.</p>
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<p>MIMO system in RF energy harvesting.</p>
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<p>Schematic diagram of common PSC architectures: 2-terminal (<b>A</b>) and 4-terminal (<b>B</b>).</p>
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<p>Delon quadruple rectifier used in the RF energy harvester.</p>
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<p>Single−diode PV cell equivalent circuit.</p>
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<p>PSC array equivalent circuit.</p>
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<p>I-V and P-V characteristic curve of the perovskite-on-Si tandem solar cell used on this study.</p>
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<p>The proposed rectifier’s output voltage measured at the node (Vdc), shown in <a href="#technologies-13-00092-f006" class="html-fig">Figure 6</a>, and current at different input RF power levels.</p>
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<p>The rectifier’s output power measured at the node (Vdc) (refer to <a href="#technologies-13-00092-f006" class="html-fig">Figure 6</a>) and efficiency for different input RF power levels.</p>
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<p>The output voltage of a single–antenna RF energy harvester across various loads and diverse levels of RF input power.</p>
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<p>The efficiency of a single–antenna RF energy harvester under different loads and RF input power levels.</p>
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<p>The MIMO RF-EH output voltage at various RF input power levels.</p>
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<p>The output power of the MIMO RF-EH at different RF input power.</p>
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<p>The MIMO RF-EH output current at varying input RF power levels.</p>
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<p>Efficiency of the MIMO of RF-EH at different levels of input RF power.</p>
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<p>I-V and P-V characteristic curve of the perovskite-on-Si tandem solar cell with ADS-based simulation.</p>
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<p>I-V and P-V characteristic curve of the perovskite-on-Si tandem solar array with MATLAB simulation.</p>
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<p>I-V and P-V characteristic curve of the perovskite-on-Si tandem solar array with ADS-based simulation.</p>
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<p>The power output of hybrid RF-PSC configurations varies across different levels of RF input power, particularly at the peak power point of the PSC array under irradiation of 1000 W/m<sup>2</sup>.</p>
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28 pages, 17376 KiB  
Review
Structural Capsidomics of Single-Stranded DNA Viruses
by Mario Mietzsch, Antonette Bennett and Robert McKenna
Viruses 2025, 17(3), 333; https://doi.org/10.3390/v17030333 - 27 Feb 2025
Viewed by 10
Abstract
Single-stranded DNA (ssDNA) viruses are a diverse group of pathogens with broad host range, including bacteria, archaea, protists, fungi, plants, invertebrates, and vertebrates. Their small compact genomes have evolved to encode multiple proteins. This review focuses on the structure and functional diversity of [...] Read more.
Single-stranded DNA (ssDNA) viruses are a diverse group of pathogens with broad host range, including bacteria, archaea, protists, fungi, plants, invertebrates, and vertebrates. Their small compact genomes have evolved to encode multiple proteins. This review focuses on the structure and functional diversity of the icosahedral capsids across the ssDNA viruses. To date, X-ray crystallography and cryo-electron microscopy structural studies have provided detailed capsid architectures for 8 of the 35 ssDNA virus families, illustrating variations in assembly mechanisms, symmetry, and structural adaptations of the capsid. However, common features include the conserved jelly-roll motif of the capsid protein and strategies for genome packaging, also showing evolutionary convergence. The ever-increasing availability of genomic sequences of ssDNA viruses and predictive protein modeling programs, such as using AlphaFold, allows for the extension of structural insights to the less-characterized families. Therefore, this review is a comparative analysis of the icosahedral ssDNA virus families and how the capsid proteins are arranged with different tessellations to form icosahedral spheres. It summarizes the current knowledge, emphasizing gaps in the structural characterization of the ssDNA capsidome, and it underscores the importance of continued exploration to understand the molecular underpinnings of capsid function and evolution. These insights have implications for virology, molecular biology, and therapeutic applications. Full article
(This article belongs to the Special Issue Virus Assembly and Genome Packaging)
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Figure 1
<p>Symmetry-related interactions and triangulation number of icosahedral capsids. (<b>A</b>) Three identical musical notes (quaver) arranged with threefold symmetry (indicated by the black triangle), forming an equilateral triangle (blue open triangle). (<b>B</b>) Sixty quavers distributed with icosahedral symmetry representing the surface of the capsid. (<b>C</b>) T = 1 icosahedron with 20 triangular faces, where the center represents the 3-fold axis of symmetry, the edges of the triangle represent the 2-fold axis of symmetry, and the vertices represent the 5-fold axis of symmetry, with the viral asymmetric unit shown as a red open triangle. (<b>D</b>) Hexagonal plane of an icosahedral capsid, where the h and k vector planes (colored magenta) are 60° apart, with the location of each pentamer illustrated as a pentagon. (<b>E</b>) Quasi-equivalent arrangement of 3 quavers on the face of a triangle that may either be identical or non-identical, as represented by the different shades of gray. The red triangle represents the asymmetric unit of the T = 3 capsid and the small gray triangle the pseudo-3-fold axis. (<b>F</b>) Quasi-equivalent arrangement of 180 quavers on an icosahedral capsid surface. The triangular face of the T = 3 icosahedral capsid is colored blue. (<b>G</b>) T = 3 icosahedron with hexameric units representing the 3-fold axis, the edges of the triangle representing the 2-fold axis of symmetry, and the vertices representing the 5-fold access of symmetry. (<b>H</b>) Hexagonal plane of a T = 3 icosahedral capsid, where the h and k vector planes are 60° apart, with the location of each pentamer illustrated as a pentagon and a hexamer represented as a hexagon. The icosahedral 2-, 3-, and 5-fold axes are represented as an oval, triangle, and a pentagon, respectively.</p>
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<p>Symmetry-related interactions of the T = 1 icosahedral capsid of FBNSV. (<b>A</b>) Cartoon representation of a CP monomer. The N- and C-termini are labeled, and the approximate position of the icosahedral 2-, 3-, and 5-fold axes are shown. (<b>B</b>) The dimer, (<b>C</b>) trimer, and (<b>D</b>) pentamer interfaces are depicted. (<b>E</b>) The 60mer with the viral asymmetric unit is shown in the red triangle, as in <a href="#viruses-17-00333-f001" class="html-fig">Figure 1</a>. The icosahedral 2-fold, 3-fold, and 5-fold axes are represented as an oval, a triangle, and a pentagon, respectively.</p>
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<p>Symmetry-related interactions of the T = 3 icosahedral capsid of CtenDNAV-II. (<b>A</b>) Cartoon representation of a CP monomer. The N- and C-termini are labeled as N and C respectively, and the approximate position of the icosahedral 2-fold, 3-fold, and 5-fold axes are shown. (<b>B</b>) The asymmetric unit, (<b>C</b>) dimer, (<b>D</b>) trimer, and (<b>E</b>) pentamer interfaces are depicted. (<b>F</b>) The 180mer with the viral asymmetric unit is shown in the red triangle. The icosahedral 2-fold, 3-fold, and 5-fold axes are represented as an oval, a triangle (black and gray), and a pentagon, respectively.</p>
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<p>Symmetry-related interactions of a pseudo-T = 21 d icosahedral capsid. (<b>A</b>) Cartoon representation of the major CP monomer. The N- and C-termini are labeled. (<b>B</b>) The asymmetric unit composed of ten CPs is shown. Three CPs (yellow, blue, red) form a pseudo-hexameric unit. The tenth CP (salmon) of the asymmetric unit is unpaired but interacts with two additional asymmetric units (cyan and magenta) to form the central (<b>C</b>) pseudo-hexameric unit within the triangular facet of the pseudo-T = 21 d capsid. The icosahedral 2-fold, 3-fold, and 5-fold axes are indicated. At the 5-fold axis, the penton is formed by five copies of the minor CP.</p>
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<p>Overview of ssDNA virus families with determined capsid structures. Shown are 1–2 capsid structures per virus family. Each capsid is radially colored (blue to red) according to the distance to the center of the particle (other than the <span class="html-italic">Geminiviridae</span>, which are radially colored for each of the two incomplete half capsids). The number of determined capsid structures within each family, their approximate capsid size, their triangulation number, and the PDB-ID (in red) are provided. All capsid images are oriented as indicated by the symmetry diagram shown in the central circle of the wheel, centered down the icosahedral 2-fold axis. In a clockwise direction, starting at 1 o’clock, the viruses are as follows: FBNSV: faba bean necrotic stunt virus, BFDV: beak and feather disease virus, PCV: porcine circovirus, PmMDV: <span class="html-italic">Penaeus monodon</span> metallodensovirus, CPV: canine parvovirus, TTMV: torque teno mini virus, SpV: spiroplasma virus, AYVV: ageratum yellow vein virus, MSV: maize streak virus, CtenDNAV: <span class="html-italic">Chaetoceros tenuissimus</span> DNA virus, and FLiP: flavobacterium-infecting, lipid-containing phage. pT: pseudo-T.</p>
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<p>The jelly-roll motif in ssDNA viruses. (<b>A</b>) A depiction of a stylized capsid protein model with its jelly-roll motif, with the β-strands of the CHEF and BIDG sheets depicted in red and blue, respectively. The individual β-strands, the connecting surface loops, and the approximate positions of the icosahedral symmetry axes are labeled. (<b>B</b>) The capsid monomer structures of TTMV-Ly6 (<span class="html-italic">Anelloviridae</span>), PCV2 (<span class="html-italic">Circoviridae</span>), MSV (<span class="html-italic">Geminiviridae</span>), φX174 (<span class="html-italic">Microviridae</span>), FBNSV (<span class="html-italic">Nanoviridae</span>), and CPV (<span class="html-italic">Parvoviridae</span>).</p>
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<p>Amino acid occurrence frequency in the jelly-roll motif. The combined amino acid frequencies in βBIDG (<b>left</b>) and βCHEF (<b>right</b>) of TTMV-Ly6, PCV2, MSV, X174, FBNSV, and CPV are shown. Hydrophobic residues are colored orange, basic residues blue, acidic residues red, and polar residues green. Glycine and proline are colored gray.</p>
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<p>Positional location of the jelly-roll motif in the context of the capsid. Transparent radially colored (blue, green, yellow, to red, according to the distance to the center of the particle) surface representations for the capsids of the T = 1 ssDNA virus capsids. The βBIDG and βCHEF sheets are colored blue and red, respectively. The position of the 2-, 3-, and 5-fold symmetry axes are indicated. Below each capsid, a cross-section through the center of the capsid is shown, and the approximate diameter and volume inside the capsid are provided.</p>
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<p>The jelly-roll motif in ssDNA T &gt; 1 capsids. The capsid monomer structures of CtenDNAV-II (<span class="html-italic">Bacilladnaviridae</span>), FLiP (<span class="html-italic">Finnlakeviridae</span>), and φCjT23 (<span class="html-italic">Ficleduovirus</span>) are displayed. Their βBIDG (blue/orange), βCHEF (red/gray), and sheet extensions (magenta) are labeled. Transparent radially colored (blue, green, yellow, to red, according to the distance to the center of the particle) surface representations for the capsids are shown. The position of the 2-, 3-, and 5-fold symmetry axes are indicated. Below each capsid, a cross-section through the center of the capsid is shown, and the approximate diameter and enclosed volume of the capsid interior are provided.</p>
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<p>Genome packaging density of ssDNA virus capsids. Plotted are the available interior volumes of determined ssDNA virus capsids vs. the sizes of their genomes. The colored lines indicate various packing densities from 0.5 to 3 nt/nm<sup>3</sup>. For reference, the dimensions of a dCMP and dGMP nucleotide are provided.</p>
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<p>The capsids of the <span class="html-italic">Cressdnaviricota</span>. Shown are AlphaFold3 models of the viral CPs with the βBIDG sheet colored blue and βCHEF red. Alpha helices are colored orange. The ssDNA virus family, the selected virus, and the size of its CP are listed. Below each CP model, the corresponding generated assembled capsids with the genome size range are provided for each family. The capsids are radially colored (blue, green, yellow, to red, according to the distance to the center of the particle).</p>
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<p>The capsids of the ssDNA virus families <span class="html-italic">Gandrviridae</span> and <span class="html-italic">Bidnaviridae</span>. (<b>A</b>) The CP monomers of CtenDNAV-II and minnow isolate ctdb796 of the <span class="html-italic">Bacilladnaviridae</span> and <span class="html-italic">Gandrviridae</span> are shown, respectively. The βBIDG sheet is colored blue, βCHEF red, βC’/ βC’’ magenta, other β-strands in gray, and the α-helices in orange. The percentages of amino acid sequence identity and structurally aligned residues are provided. A T = 3 capsid based on the <span class="html-italic">Gandrviridae</span> CP model is shown. (<b>B</b>) Depiction, as in A, of bombyx mori densovirus (BmDV) and bombyx mori bidensovirus 2 (BmBDV2), with a T = 1 capsid generated for BmBDV2. The capsids are radially colored, red for the capsid exterior, yellow followed by green for the body and blue extending to the capsid interior.</p>
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<p>The N-termini of the ssDNA CPs with T = 1 and T = 3 capsids. The pI and amino acid sequence of the selected viruses are shown. Residues in blue indicate basic amino acids, those in magenta indicate aromatic residues, and those in orange indicate glycine.</p>
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34 pages, 4181 KiB  
Article
Tiny Language Models for Automation and Control: Overview, Potential Applications, and Future Research Directions
by Ismail Lamaakal, Yassine Maleh, Khalid El Makkaoui, Ibrahim Ouahbi, Paweł Pławiak, Osama Alfarraj, May Almousa and Ahmed A. Abd El-Latif
Sensors 2025, 25(5), 1318; https://doi.org/10.3390/s25051318 - 21 Feb 2025
Viewed by 356
Abstract
Large Language Models (LLMs), like GPT and BERT, have significantly advanced Natural Language Processing (NLP), enabling high performance on complex tasks. However, their size and computational needs make LLMs unsuitable for deployment on resource-constrained devices, where efficiency, speed, and low power consumption are [...] Read more.
Large Language Models (LLMs), like GPT and BERT, have significantly advanced Natural Language Processing (NLP), enabling high performance on complex tasks. However, their size and computational needs make LLMs unsuitable for deployment on resource-constrained devices, where efficiency, speed, and low power consumption are critical. Tiny Language Models (TLMs), also known as BabyLMs, offer compact alternatives by using advanced compression and optimization techniques to function effectively on devices such as smartphones, Internet of Things (IoT) systems, and embedded platforms. This paper provides a comprehensive survey of TLM architectures and methodologies, including key techniques such as knowledge distillation, quantization, and pruning. Additionally, it explores potential and emerging applications of TLMs in automation and control, covering areas such as edge computing, IoT, industrial automation, and healthcare. The survey discusses challenges unique to TLMs, such as trade-offs between model size and accuracy, limited generalization, and ethical considerations in deployment. Future research directions are also proposed, focusing on hybrid compression techniques, application-specific adaptations, and context-aware TLMs optimized for hardware-specific constraints. This paper aims to serve as a foundational resource for advancing TLMs capabilities across diverse real-world applications. Full article
(This article belongs to the Section Intelligent Sensors)
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Figure 1
<p>An overview of TLMs from 2022–2024 [<a href="#B48-sensors-25-01318" class="html-bibr">48</a>].</p>
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<p>Paper Organization.</p>
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<p>Transformer architecture.</p>
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18 pages, 1855 KiB  
Article
A Fully Integrated Memristive Chaotic Circuit Based on Memristor Emulator with Voltage-Controlled Oscillator
by Zhikui Duan, Jiahui Chen, Shaobo He, Xinmei Yu, Qiang Wang, Xin Zhang and Peng Xiong
Micromachines 2025, 16(3), 246; https://doi.org/10.3390/mi16030246 - 21 Feb 2025
Viewed by 298
Abstract
This paper introduces a fully integrated memristive chaotic circuit, which is based on a voltage-controlled oscillator (VCO). The circuit employs a fully integrated architecture that offers reduced power consumption and a smaller footprint compared to the use of discrete components. Specifically, the VCO [...] Read more.
This paper introduces a fully integrated memristive chaotic circuit, which is based on a voltage-controlled oscillator (VCO). The circuit employs a fully integrated architecture that offers reduced power consumption and a smaller footprint compared to the use of discrete components. Specifically, the VCO is utilized to generate the oscillatory signal, whereas the memristor emulator circuit serves as the nonlinear element. The memristor emulator circuit is constructed using a single operational transconductance amplifier (OTA), two transistors, and a grounded capacitor. This straightforward design contributes to diminished power usage within the chip’s area. The VCO incorporates a dual delay unit and implements current compensation to enhance the oscillation frequency and to broaden the VCO’s tunable range. Fabricated using the SMIC 180 nm CMOS process, this chaotic circuit occupies a mere 0.0072 mm2 of chip area, demonstrating a design that is both efficient and compact. Simulation outcomes indicate that the proposed memristor emulator is capable of operating at a maximum frequency of 300 MHz. The memristive chaotic circuit is able to produce a chaotic oscillatory signal with an operational frequency ranging from 158 MHz to 286 MHz, powered by a supply of 0.9 V, and with a peak power consumption of 3.5553 mW. The Lyapunov exponent of the time series within the resultant chaotic signal spans from 0.2572 to 0.4341. Full article
(This article belongs to the Section E:Engineering and Technology)
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<p>The simplest memristive chaotic circuit.</p>
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<p>The proposed memristive chaotic circuit.</p>
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<p>Circuit topology of memristor emulator.</p>
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<p>Pinch hysteresis curve for different frequencies, when frequency is (<b>a</b>) 100 MHz, (<b>b</b>) 150 MHz, (<b>c</b>) 200 MHz, (<b>d</b>) 250 MHz, (<b>e</b>) 300 MHz, and (<b>f</b>) 350 MHz.</p>
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<p>Non−volatility analysis for proposed memristor circuit.</p>
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<p>Implementation of voltage-controlled oscillators.</p>
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<p>Circuit topology of double delay cells in voltage−controlled oscillators.</p>
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<p>Out1−Out2 output curve of VCO.</p>
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<p><math display="inline"><semantics> <msub> <mi>K</mi> <mrow> <mi>V</mi> <mi>C</mi> <mi>O</mi> </mrow> </msub> </semantics></math> curves under different PVT processes.</p>
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<p>Proposed memristive chaotic circuit dased on VCO.</p>
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<p>Proposed memristive chaotic circuit layout.</p>
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<p>Chaotic phenomena with different oscillation frequencies at Tran = 1 ps, T = 5 µs, and <math display="inline"><semantics> <msub> <mi>V</mi> <mi>b</mi> </msub> </semantics></math> = 0.3 V: (<b>a</b>) f = 158 MHz, R = 2 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>0</mn> </msub> </semantics></math> = 50 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>1</mn> </msub> </semantics></math> = 300 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>2</mn> </msub> </semantics></math> = 500 fF, and <math display="inline"><semantics> <mrow> <mi>L</mi> <mi>y</mi> </mrow> </semantics></math> = 0.2572; (<b>b</b>) f = 211 MHz, R = 5 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>0</mn> </msub> </semantics></math> = 50 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>1</mn> </msub> </semantics></math> = 500 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>2</mn> </msub> </semantics></math> = 1200 fF, and <math display="inline"><semantics> <mrow> <mi>L</mi> <mi>y</mi> </mrow> </semantics></math> = 0.4047; and (<b>c</b>) f = 284 MHz, R = 5.2 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>0</mn> </msub> </semantics></math> = 50 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>1</mn> </msub> </semantics></math> = 400 fF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>2</mn> </msub> </semantics></math> = 800 fF, and <math display="inline"><semantics> <mrow> <mi>L</mi> <mi>y</mi> </mrow> </semantics></math> = 0.4341.</p>
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<p>Chaotic phenomena with different values of <span class="html-italic">R</span> and operating frequency of 298 MHz: (<b>a</b>) R = 4 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>, <math display="inline"><semantics> <mrow> <mi>L</mi> <mi>y</mi> </mrow> </semantics></math> &lt; 0; (<b>b</b>) R = 4.5 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>; (<b>c</b>) R = 4.8 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>; (<b>d</b>) R = 5.5 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>; (<b>e</b>) R = 7 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>; and (<b>f</b>) R = 10 K<math display="inline"><semantics> <mo>Ω</mo> </semantics></math>, <math display="inline"><semantics> <mrow> <mi>L</mi> <mi>y</mi> </mrow> </semantics></math> &lt; 0.</p>
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<p>Corresponding Lyapunov exponents for (<b>a</b>) <a href="#micromachines-16-00246-f013" class="html-fig">Figure 13</a>a; (<b>b</b>) <a href="#micromachines-16-00246-f013" class="html-fig">Figure 13</a>d; and (<b>c</b>) <a href="#micromachines-16-00246-f013" class="html-fig">Figure 13</a>e.</p>
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<p>(<b>a</b>) The verification result graph of the 0−1 test algorithm. (<b>b</b>) The p−q planar graph of the 0–1 test algorithm.</p>
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13 pages, 4545 KiB  
Article
An Optimized PZT-FBG Voltage/Temperature Sensor
by Shangpeng Sun, Feiyue Ma, Yanxiao He, Bo Niu, Cheng Wang, Longcheng Dai and Zhongyang Zhao
Micromachines 2025, 16(2), 235; https://doi.org/10.3390/mi16020235 - 19 Feb 2025
Viewed by 180
Abstract
The piezoelectric grating voltage sensor has garnered significant attention in the realm of intelligent sensing, attributed to its compact size, cost-effectiveness, robust electromagnetic interference (EMI) immunity, and high network integration capabilities. In this paper, we propose a PZT-FBG (piezoelectric ceramic–fiber Bragg grating) voltage–temperature [...] Read more.
The piezoelectric grating voltage sensor has garnered significant attention in the realm of intelligent sensing, attributed to its compact size, cost-effectiveness, robust electromagnetic interference (EMI) immunity, and high network integration capabilities. In this paper, we propose a PZT-FBG (piezoelectric ceramic–fiber Bragg grating) voltage–temperature demodulation optical path architecture. This scheme effectively utilizes the originally unused temperature compensation reference grating, repurposing it as a temperature measurement grating. By employing FBGs with identical or similar parameters, we experimentally validate two distinct optical path connection schemes, before and after optimization. The experimental results reveal that, when the input voltage ranges from 250 V to 1800 V at a frequency of 50 Hz, the goodness of fit for the three fundamental waveforms is 0.996, 0.999, and 0.992, respectively. Furthermore, the sensor’s frequency response was tested across a frequency range of 50 Hz to 20 kHz, demonstrating that the measurement system can effectively respond within the sensor’s operational frequency range. Additionally, temperature measurement experiments showed a goodness of fit of 0.997 for the central wavelength of the FBG as the temperature increased. This research indicates that the improved optical path connection method not only accomplishes a synchronous demodulation of both temperature and voltage parameters but also markedly enhances the linearity and resolution of the voltage sensor. This discovery offers novel insights for further refining sensor performance and broadening the applications of optical voltage sensors. Full article
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<p>(<b>a</b>) The optical path connection before optimization; (<b>b</b>) optimized optical path connection.</p>
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<p>(<b>a</b>) The spectral overlap area before optimization; (<b>b</b>) optimized spectral overlap area.</p>
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<p>The optimized physical diagram of the PZT-FBG voltage/temperature sensor.</p>
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<p>Experimental test platform.</p>
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<p>(<b>a</b>) 1.2 kV, 50 Hz sine wave input and output response; (<b>b</b>) 1.2 kV, 5 kHz sine wave input and output response; (<b>c</b>) 1.2 kV, 50 Hz rectangular wave input and output response; (<b>d</b>) 1.2 kV, 5 kHz rectangular wave input and output response; (<b>e</b>) 1.2 kV, 50 Hz triangular wave input and output response; (<b>f</b>) 1.2 kV, 5 kHz triangular wave input–output response.</p>
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<p>(<b>a</b>) Output fitting results of three basic waveforms at 50 Hz before optimization; (<b>b</b>) the output fitting results of three basic waveforms at 50 Hz after optimization.</p>
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<p>Frequency response test results.</p>
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<p>(<b>a</b>) The central wavelength shifts to the right with the increase in temperature. (<b>b</b>) Fitting results of center wavelength with increasing temperature.</p>
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22 pages, 9277 KiB  
Article
LRNTRM-YOLO: Research on Real-Time Recognition of Non-Tobacco-Related Materials
by Chunjie Zhang, Lijun Yun, Chenggui Yang, Zaiqing Chen and Feiyan Cheng
Agronomy 2025, 15(2), 489; https://doi.org/10.3390/agronomy15020489 - 18 Feb 2025
Viewed by 214
Abstract
The presence of non-tobacco-related materials can significantly compromise the quality of tobacco. To accurately detect non-tobacco-related materials, this study introduces a lightweight and real-time detection model derived from the YOLOv11 framework, named LRNTRM-YOLO. Initially, due to the sub-optimal accuracy in detecting diminutive non-tobacco-related [...] Read more.
The presence of non-tobacco-related materials can significantly compromise the quality of tobacco. To accurately detect non-tobacco-related materials, this study introduces a lightweight and real-time detection model derived from the YOLOv11 framework, named LRNTRM-YOLO. Initially, due to the sub-optimal accuracy in detecting diminutive non-tobacco-related materials, the model was augmented by incorporating an additional layer dedicated to enhancing the detection of small targets, thereby improving the overall accuracy. Furthermore, an attention mechanism was incorporated into the backbone network to focus on the features of the detection targets, thereby improving the detection efficacy of the model. Simultaneously, for the introduction of the SIoU loss function, the angular vector between the bounding box regressions was utilized to define the loss function, thus improving the training efficiency of the model. Following these enhancements, a channel pruning technique was employed to streamline the network, which not only reduced the parameter count but also expedited the inference process, yielding a more compact model for non-tobacco-related material detection. The experimental results on the NTRM dataset indicate that the LRNTRM-YOLO model achieved a mean average precision (mAP) of 92.9%, surpassing the baseline model by a margin of 4.8%. Additionally, there was a 68.3% reduction in the parameters and a 15.9% decrease in floating-point operations compared to the baseline model. Comparative analysis with prominent models confirmed the superiority of the proposed model in terms of its lightweight architecture, high accuracy, and real-time capabilities, thereby offering an innovative and practical solution for detecting non-tobacco-related materials in the future. Full article
(This article belongs to the Special Issue Robotics and Automation in Farming)
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<p>Data collection environment.</p>
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<p>Image acquisition system.</p>
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<p>Overall technical route.</p>
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<p>Examples of small non-tobacco-related materials: (<b>a</b>) Sample image; (<b>b</b>) enlarged display of the feather in (<b>a</b>).</p>
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<p>Details of adding a small target detection layer. The area delineated by the red box represents the detailed process of enhancement.</p>
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<p>Schematic diagram of the principle of CPCA.</p>
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<p>Schematic diagram of SIoU. <math display="inline"><semantics> <mrow> <msup> <mi mathvariant="normal">b</mi> <mrow> <mi>gt</mi> </mrow> </msup> </mrow> </semantics></math> is the ground truth box, and b is the predicted box.</p>
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<p>Loss function curve of the model in the training set.</p>
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<p>Comparison before and after pruning.</p>
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<p>Comparison of the different pruning strategies.</p>
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<p>Visualization of the detection results: (<b>a</b>–<b>c</b>) Detection results of YOLOv11n; (<b>d</b>–<b>f</b>) detection results of LRNTRM-YOLO. The yellow shape in the figure indicates the presence of missed or error detections.</p>
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<p>Raspberry Pi 5.</p>
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<p>Visualization of the detection results. The non-tobacco-related materials detected in each image were (<b>a</b>) a label paper, (<b>b</b>) a feather, (<b>c</b>) a hemp rope, (<b>d</b>) a weed, (<b>e</b>) a rubber ring and a label paper, and (<b>f</b>) plastic and a hemp rope. Different types of non-tobacco-related materials in the image are labeled with different colors.</p>
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16 pages, 3412 KiB  
Article
New Cyclam-Based Fe(III) Complexes Coatings Targeting Cobetia marina Biofilms
by Fábio M. Carvalho, Luciana C. Gomes, Rita Teixeira-Santos, Ana P. Carapeto, Filipe J. Mergulhão, Stephanie Almada, Elisabete R. Silva and Luis G. Alves
Molecules 2025, 30(4), 917; https://doi.org/10.3390/molecules30040917 - 16 Feb 2025
Viewed by 269
Abstract
Recent research efforts to mitigate the burden of biofouling in marine environments have focused on the development of environmentally friendly coatings that can provide long-lasting protective effects. In this study, the antifouling performance of novel polyurethane (PU)-based coatings containing cyclam-based Fe(III) complexes against [...] Read more.
Recent research efforts to mitigate the burden of biofouling in marine environments have focused on the development of environmentally friendly coatings that can provide long-lasting protective effects. In this study, the antifouling performance of novel polyurethane (PU)-based coatings containing cyclam-based Fe(III) complexes against Cobetia marina biofilm formation was investigated. Biofilm assays were performed over 42 days under controlled hydrodynamic conditions that mimicked marine environments. Colony-forming units (CFU) determination and flow cytometric (FC) analysis showed that PU-coated surfaces incorporating 1 wt.% of complexes with formula [{R2(4-CF3PhCH2)2Cyclam}FeCl2]Cl (R = H, HOCH2CH2CH2) significantly reduced both culturable and total cells of C. marina biofilms up to 50% (R = H) and 38% (R = HOCH2CH2CH2) compared to PU-coated surface without complexes (control surface). The biofilm architecture was further analyzed using Optical Coherence Tomography (OCT), which showed that biofilms formed on the PU-coated surfaces containing cyclam-based Fe(III) complexes exhibited a significantly reduced thickness (58–61% reduction), biovolume (50–60% reduction), porosity (95–97% reduction), and contour coefficient (77% reduction) compared to the control surface, demonstrating a more uniform and compact structure. These findings were also supported by Confocal Laser Scanning Microscopy (CLSM) images, which showed a decrease in biofilm surface coverage on PU-coated surfaces containing cyclam-based Fe(III) complexes. Moreover, FC analysis revealed that exposure to PU-coated surfaces increases bacterial metabolic activity and induces ROS production. These results underscore the potential of these complexes to incorporate PU-coated surfaces as bioactive additives in coatings to effectively deter long-term bacterial colonization in marine environments, thereby addressing biofouling-related challenges. Full article
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<p>Chemical structure of [{H<sub>2</sub>(<sup>4-CF3</sup>PhCH<sub>2</sub>)<sub>2</sub>Cyclam}FeCl<sub>2</sub>]Cl (<b>FeCy-1</b>) and [{(HOCH<sub>2</sub>CH<sub>2</sub>CH<sub>2</sub>)<sub>2</sub>(<sup>4-CF3</sup>PhCH<sub>2</sub>)<sub>2</sub>Cyclam}FeCl<sub>2</sub>]Cl (<b>FeCy-2</b>).</p>
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<p>(<b>a</b>) Culturable and (<b>b</b>) total cells of <span class="html-italic">C. marina</span> biofilms formed on <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces after 42 days. The asterisks represent statistical differences between PU and the PU/FeCy surfaces (<span class="html-italic">p</span>-values &lt; 0.05).</p>
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<p>(<b>a</b>) Representative images of water contact angle measurements and (<b>b</b>) visual depictions (captured by the Optical Coherence Tomography (OCT) camera; scale bar = 1 mm) of <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces.</p>
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<p>(<b>a</b>) Two-dimensional and (<b>b</b>) three-dimensional AFM images of <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces, including absolute average (R<sub>a</sub>) and root mean square (R<sub>q</sub>) values. All images correspond to a 5 × 5 µm<sup>2</sup> surface area.</p>
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<p>Representative 3D OCT images of C. marina biofilms formed on <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces after 42 days. The color scale shows the range of biofilm thickness. All images were obtained in a scan range of 2490 µm × 1512 µm × 600 µm.</p>
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<p>(<b>a</b>) Thickness, (<b>b</b>) porosity, (<b>c</b>) contour coefficient, and (<b>d</b>) biovolume of <span class="html-italic">C. marina</span> biofilms formed on <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces after 42 days. The asterisks represent statistical differences between <b>PU</b> and PU/FeCy surfaces (<span class="html-italic">p</span>-values &lt; 0.05).</p>
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<p>CLSM images of C. marina biofilms on <b>PU</b> (control), <b>PU/FeCy-1</b>, and <b>PU/FeCy-2</b> surfaces after 42 days. These representative images were obtained from confocal <math display="inline"><semantics> <mi>z</mi> </semantics></math>-stacks using the IMARIS 9.3.1 software and present an aerial, 3D view of the biofilms, with the shadow projection on the right. The white scale bars represent 40 μm.</p>
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23 pages, 6804 KiB  
Article
Theoretical Analysis of Efficient Thermo-Optic Switching on Si3N4 Waveguide Platform Using SiOC-Based Plasmo-Photonics
by Dimitris V. Bellas, Eleftheria Lampadariou, George Dabos, Ioannis Vangelidis, Laurent Markey, Jean-Claude Weeber, Nikos Pleros and Elefterios Lidorikis
Nanomaterials 2025, 15(4), 296; https://doi.org/10.3390/nano15040296 - 15 Feb 2025
Viewed by 356
Abstract
Photonic integrated circuits (PICs) are crucial for advanced applications in telecommunications, quantum computing, and biomedical fields. Silicon nitride (SiN)-based platforms are promising for PICs due to their transparency, low optical loss, and thermal stability. However, achieving efficient thermo-optic (TO) modulation on SiN remains [...] Read more.
Photonic integrated circuits (PICs) are crucial for advanced applications in telecommunications, quantum computing, and biomedical fields. Silicon nitride (SiN)-based platforms are promising for PICs due to their transparency, low optical loss, and thermal stability. However, achieving efficient thermo-optic (TO) modulation on SiN remains challenging due to limited reconfigurability and high power requirements. This study aims to optimize TO phase shifters on SiN platforms to enhance power efficiency, reduce device footprint, and minimize insertion losses. We introduce a CMOS-compatible plasmo-photonic TO phase shifter using a SiOC material layer with a high TO coefficient combined with aluminum heaters on a SiN platform. We evaluate four interferometer architectures—symmetric and asymmetric Mach–Zehnder Interferometers (MZIs), an MZI with a ring resonator, and a single-arm design—through opto-thermal simulations to refine performance across power, losses, footprint, and switching speed metrics. The asymmetric MZI with ring resonator (A-MZI-RR) architecture demonstrated superior performance, with minimal power consumption (1.6 mW), low insertion loss (2.8 dB), and reduced length (14.4 μm), showing a favorable figure of merit compared to existing solutions. The optimized SiN-based TO switches show enhanced efficiency and compactness, supporting their potential for scalable, energy-efficient PICs suited to high-performance photonic applications. Full article
(This article belongs to the Special Issue Progress of Nanoscale Materials in Plasmonics and Photonics)
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<p>(<b>a</b>) Cross-sectional view of the active thermo-optic (TO) layered stack. Schematics of the thermo-optic interferometer architectures examined: (<b>b</b>) Mach–Zehnder Interferometer (MZI) applicable for both symmetric and asymmetric configurations, (<b>c</b>) asymmetric MZI with ring resonator-assisted configuration, (<b>d</b>) single-arm configuration.</p>
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<p>Specify our work within the state-of-the-art TO switches on SiN platforms and DLSPPs, as presented in <a href="#nanomaterials-15-00296-t001" class="html-table">Table 1</a>.</p>
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<p>(<b>a</b>) A 3D schematic illustration of the TO active WG showing the stratified material stack and the corresponding refractive indices. (<b>b</b>) A 2D cross-section highlighting the dimensions considered for optimization, specifically the width of the TO WG (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> </mrow> </semantics></math>) and the thicknesses of the SiOC layers. (<b>c</b>) A 2D side view depicting the injected transverse magnetic (TM) photonic mode, which couples to various plasmo-photonic hybrid modes supported by the TO WG stack (see insets in (<b>d</b>)) and then decouples into the SiN photonic mode. (<b>d</b>) Three-dimensional FDTD simulations demonstrating the coupling transmission (at zero distance, i.e., the front interface) and propagation of the dominant plasmo-photonic modes (M2, M5, M7) as a function of distance in the TO waveguide stack. The dotted lines represent the corresponding Beer–Lambert law for each mode, showing perfect agreement with the 3D FDTD simulations. The cross-sectional parameters of TO WG are as follows: <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mtext> </mtext> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>t</mi> </mrow> <mrow> <mi>L</mi> <mi mathvariant="normal">I</mi> </mrow> </msub> <mo>=</mo> <mn>180</mn> <mtext> </mtext> <mi mathvariant="normal">n</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>t</mi> </mrow> <mrow> <mi mathvariant="normal">H</mi> <mi mathvariant="normal">I</mi> </mrow> </msub> <mo>=</mo> <mn>480</mn> <mtext> </mtext> <mi mathvariant="normal">n</mi> <mi mathvariant="normal">m</mi> <mo>,</mo> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>L</mi> <mo>=</mo> <mn>62</mn> <mtext> </mtext> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>.</p>
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<p>(<b>a</b>) Transmitted amplitude in each arm as a function of the TO WG length, showing two equal-amplitude points per period. (<b>b</b>) Phase difference between the two arms for three different temperature increments, plotted against the TO WG length. (<b>c</b>) Amplitude, phase, and total error function (i.e., divergence from the ideal π phase-shift operation) as a function of the TO WG length. Dashed lines in each graph indicate the optimal TO WG length (<math display="inline"><semantics> <mrow> <mi>L</mi> <mo>=</mo> <mn>62</mn> <mtext> </mtext> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>). The cross-sectional parameters of the TO WG are consistent with those shown in <a href="#nanomaterials-15-00296-f003" class="html-fig">Figure 3</a>.</p>
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<p>(<b>a</b>) Total transmission (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">a</mi> <mi mathvariant="normal">x</mi> </mrow> </msub> <mo>)</mo> </mrow> </semantics></math> of S-MZI as a function of high-index SiOC thickness and Al/SiOC width for 180 nm low-index SiOC and <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">Δ</mi> <mi>T</mi> <mo>=</mo> <mn>80</mn> <mtext> </mtext> <mi mathvariant="normal">K</mi> <mo>.</mo> </mrow> </semantics></math> (<b>b</b>) The corresponding total error function, with a star point indicating a high-transmission region with minimal total errors. (<b>c</b>) Full 3D FDTD simulations validating the semi-analytical model in both amplitude and phase, as a function of normalized bias (the ratio of the applied temperature difference to <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">Δ</mi> <mi>T</mi> <mo>=</mo> <mn>80</mn> <mtext> </mtext> <mi mathvariant="normal">K</mi> </mrow> </semantics></math>), for the optimum case indicated by the star point in (<b>a</b>,<b>b</b>).</p>
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<p>(<b>a</b>) Schematic illustration of the thermal model, showing the configuration of materials, temperature monitoring points, and the oxide layer width used for thermal isolation. The inset provides a cross-sectional view of the thermal simulations. (<b>b</b>) Transient temperature rise in the SiOC layer under varying operating frequencies and thermal dissipation conditions, including a heat exchange coefficient (<math display="inline"><semantics> <mrow> <mi>h</mi> <mo>=</mo> <mn>300</mn> <mtext> </mtext> <mi mathvariant="normal">W</mi> <mo>/</mo> <msup> <mrow> <mi mathvariant="normal">m</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msup> </mrow> </semantics></math>) and a fixed room temperature (<math display="inline"><semantics> <mrow> <mi>T</mi> <mo>=</mo> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mn>0</mn> </mrow> </msub> </mrow> </semantics></math>). These simulations are conducted for the isolated SiO<sub>2</sub> configuration shown in (<b>a</b>), where <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mo> </mo> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>L</mi> <mo>=</mo> <mn>100</mn> <mo> </mo> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>.</p>
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<p>(<b>a</b>) The steady-state temperature rise, including both operating temperature and cross-talk effects, is analyzed as a function of the SiO<sub>2</sub> width for two back-side thermal dissipation schemes: one with a heat exchange coefficient of <math display="inline"><semantics> <mrow> <mi>h</mi> <mo>=</mo> <mn>300</mn> <mtext> </mtext> <mi mathvariant="normal">W</mi> <mo>/</mo> <msup> <mrow> <mi mathvariant="normal">m</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msup> </mrow> </semantics></math> and the other with a fixed room temperature (<math display="inline"><semantics> <mrow> <mi>T</mi> <mo>=</mo> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mn>0</mn> </mrow> </msub> </mrow> </semantics></math>). For comparison, the corresponding results for a fully encapsulated SiO<sub>2</sub> case are shown with dashed lines. The width and the length of TO WG are <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>L</mi> <mo>=</mo> <mn>100</mn> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>, respectively. (<b>b</b>) The heat transfer coefficient of the TO WG is evaluated as a function of its length for two different TO WG widths (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>1.5</mn> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>) for both etched and full top SiO<sub>2</sub> assuming a Si back-side boundary condition fixed at room temperature. An exponential fit is applied to the simulated values to define the thermal model for the power consumption extraction of the SiOC TO WG.</p>
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<p>(<b>a</b>) Total transmission (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">a</mi> <mi mathvariant="normal">x</mi> </mrow> </msub> <mo>)</mo> </mrow> </semantics></math> of the S-MZI (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>L</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> <mo>=</mo> <msub> <mrow> <mi>L</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math>) as a function of high-index and low-index SiOC thickness for the optimized <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mtext> </mtext> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>. (<b>b</b>) Spatial distribution of the electric field (<math display="inline"><semantics> <mrow> <mi mathvariant="normal">R</mi> <mi mathvariant="normal">e</mi> <mo>(</mo> <mi>E</mi> <mi>y</mi> <mo>)</mo> <mo>)</mo> </mrow> </semantics></math> for the plasmo-photonic modes supported by the TO WG, along with the coupling transmission from the SiN photonic mode to each plasmo-photonic mode, for the cross-sections marked by star points in (<b>a</b>). (<b>c</b>) Optimized WG length required for achieving a π phase shift and the corresponding power consumption as a function of high-index SiOC thickness, evaluated for three fixed low-index SiOC thicknesses. (<b>d</b>) Total modulation response as a function of normalized bias voltage for the cases indicated by the star points in (<b>a</b>).</p>
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<p>(<b>a</b>) Total transmission (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">a</mi> <mi mathvariant="normal">x</mi> </mrow> </msub> <mo>)</mo> </mrow> </semantics></math> of A-MZI (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>L</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> <mo>&gt;</mo> <msub> <mrow> <mi>L</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> </mrow> </semantics></math>) as a function of high-index and low-index SiOC thickness for optimized <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>2.1</mn> <mtext> </mtext> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>. (<b>b</b>) The optimized length (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>L</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> </mrow> </semantics></math>) for π/2 phase shift and the corresponding power consumption as a function of high-index SiOC thickness, shown for the three fixed low-index SiOC thickness values. (<b>c</b>) Overall response of the switcher as a function of normalized bias for the corresponding cases indicated by the star points in (<b>a</b>).</p>
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<p>(<b>a</b>) Schematic of A-MZI ring resonator (RR)-assisted configuration. (<b>b</b>) The transmission amplitude and the cosine of the acquired phase <math display="inline"><semantics> <mrow> <mi>φ</mi> </mrow> </semantics></math> upon heating one arm at <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">Δ</mi> <mi>T</mi> <mo>=</mo> <mn>80</mn> <mtext> </mtext> <mi mathvariant="normal">K</mi> </mrow> </semantics></math>. The vertical lines indicate the lengths corresponding to the critical coupling condition, where <math display="inline"><semantics> <mrow> <mi>a</mi> <mo>=</mo> <mi mathvariant="normal">c</mi> <mi mathvariant="normal">o</mi> <mi mathvariant="normal">s</mi> <mo>⁡</mo> <mo>(</mo> <mi>φ</mi> <mo>)</mo> </mrow> </semantics></math> for both “strong plasmonic” and “strong photonic” operational modes.</p>
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<p>(<b>a</b>) Total transmission (<math display="inline"><semantics> <mrow> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">a</mi> <mi mathvariant="normal">x</mi> </mrow> </msub> <mo>)</mo> </mrow> </semantics></math> of the 1-ARM interferometer as a function of high-index SiOC thickness and Al/SiOC width for a fixed low-index SiOC thickness of 180 nm. (<b>b</b>) The optimized length of the TO WG for the 1-ARM operation, corresponding to the configurations shown in (<b>a</b>). The star point in each graph denotes the optimal cross-section.</p>
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<p>(<b>a</b>) Total transmission <math display="inline"><semantics> <mrow> <msub> <mrow> <mo>(</mo> <mi>T</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">a</mi> <mi mathvariant="normal">x</mi> </mrow> </msub> <mo>)</mo> </mrow> </semantics></math> of the 1-ARM interferometer as a function of high-index and low-index SiOC thickness for the optimized <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>W</mi> </mrow> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">O</mi> </mrow> </msub> <mo>=</mo> <mn>1.5</mn> <mo> </mo> <mi mathvariant="normal">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>. (<b>b</b>) The optimized TO WG length for the 1-ARM operation depicted in (<b>a</b>). (<b>c</b>) The optimized TO WG length and corresponding power consumption as a function of high-index SiOC thickness for four fixed low-index SiOC thicknesses. (<b>d</b>) Total response of the switcher as a function of normalized bias for the respective cross-sections indicated by the star points in (<b>a</b>,<b>b</b>). (<b>e</b>) The real part of the electric field (<math display="inline"><semantics> <mrow> <mi>R</mi> <mi>e</mi> <mo>(</mo> <mi>E</mi> <mi>y</mi> <mo>)</mo> </mrow> </semantics></math>) spatial distribution of plasmo-photonic modes supported by the TO WG, along with the coupling efficiency from the SiN WG photonic mode for each mode, corresponding to the selected cross-sections.</p>
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<p>(<b>a</b>) Three-dimensional scatter plot of the optimized length, power consumption, and insertion losses for the different interferometer architectures. (<b>b</b>) Figure of merit for “strong plasmonic” and “strong photonic” operation for performance comparison between the interferometer architectures.</p>
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14 pages, 7452 KiB  
Article
Light-Intensity-Dependent Control of Collagen Hydrogel Properties via Riboflavin Phosphate-Mediated Photocrosslinking
by Seungyeop Yoo, Won-Gun Koh and Hyun Jong Lee
Materials 2025, 18(4), 828; https://doi.org/10.3390/ma18040828 - 14 Feb 2025
Viewed by 272
Abstract
While photocrosslinked collagen hydrogels show promise in tissue engineering, conventional approaches for property control often require complex chemical modifications or concentration changes that alter their biochemical composition. Here, we present the first systematic investigation of light-intensity-dependent control in riboflavin phosphate (RFP)-mediated photocrosslinking as [...] Read more.
While photocrosslinked collagen hydrogels show promise in tissue engineering, conventional approaches for property control often require complex chemical modifications or concentration changes that alter their biochemical composition. Here, we present the first systematic investigation of light-intensity-dependent control in riboflavin phosphate (RFP)-mediated photocrosslinking as a novel, single-parameter approach to modulate hydrogel properties while preserving native biochemical environments. We systematically investigated the effects of varying light intensities (100 K, 50 K, and 10 K lux) during hydrogel fabrication through comprehensive structural, mechanical, and biological characterization. Scanning electron microscopy revealed unprecedented control over network architecture, where higher light intensities produced more uniform and compact networks, while swelling ratio analysis showed significant differences between 100 K lux (246 ± 2-fold) and 10 K lux (265 ± 4-fold) conditions. Most significantly, we discovered that intermediate intensity (50 K lux) uniquely optimized mechanical performance in physiological conditions, achieving storage modulus of about 220 Pa after 24 h swelling, compared to about 160 and 109 Pa for 100 K and 10 K lux conditions, respectively. Remarkably, cellular studies using NIH/3T3 fibroblasts demonstrated that lower light intensity (10 K lux) enhanced cell proliferation by 2.8-fold compared to 100 K lux conditions after 7 days of culture, with superior cell network formation in both 2D and 3D environments. This groundbreaking approach establishes light intensity as a powerful single parameter for precise control of both mechanical and biological properties, offering a transformative tool for tailoring collagen-based biomaterials in tissue engineering applications. Full article
(This article belongs to the Special Issue Advances in Bio-Polymer and Polymer Composites)
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<p>Fabrication process and characterization of photocrosslinked collagen hydrogels under different light intensities. (<b>a</b>) Schematic illustration of collagen hydrogel fabrication under varying blue light intensities. (<b>b</b>) Visual assessment of hydrogel formation showing transparency changes and RFP photobleaching over time. (<b>c</b>) Macroscopic images demonstrating hydrogel stability.</p>
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<p>Fabrication process and characterization of photocrosslinked collagen hydrogels under different light intensities. (<b>a</b>) Schematic illustration of collagen hydrogel fabrication under varying blue light intensities. (<b>b</b>) Visual assessment of hydrogel formation showing transparency changes and RFP photobleaching over time. (<b>c</b>) Macroscopic images demonstrating hydrogel stability.</p>
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<p>Characterization of photocrosslinked hydrogels prepared at different light intensities. (<b>a</b>–<b>c</b>) Lyophilized cross-section SEM images of hydrogels prepared at different light intensities: (<b>a</b>) 100 K lux, (<b>b</b>) 50 K lux, and (<b>c</b>) 10 K lux (scale bar: 200 μm). (<b>d</b>) Swelling ratio of hydrogels after 24 h of photocrosslinking (** <span class="html-italic">p</span> &lt; 0.01) (<span class="html-italic">n</span> = 3).</p>
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<p>Effect of light intensity on rheological properties of photocrosslinked hydrogels. (<b>a</b>) Rheological properties of hydrogels immediately after photocrosslinking. (<b>b</b>) Rheological properties of hydrogels after 24 h of photocrosslinking. (<b>c</b>) Rheological properties of hydrogels after 24 h of swelling following photocrosslinking. G′ and G″ represent storage and loss moduli, respectively.</p>
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<p>Cell viability and proliferation assessment under different light intensity conditions. Live/dead staining images of 2D cultured cells at (<b>a</b>) day 4 and (<b>b</b>) day 7, where green fluorescence indicates live cells and red fluorescence indicates dead cells, showing decreased cell density with increasing light intensity (scale bar: 300 μm). (<b>c</b>) MTT assay results demonstrating cell proliferation over 7 days, with control and 10 K lux conditions showing significantly higher proliferation by day 7 (ns: not significant, * <span class="html-italic">p</span> &lt; 0.05, ** <span class="html-italic">p</span> &lt; 0.01) (<span class="html-italic">n</span> = 3).</p>
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<p>Cell viability and proliferation assessment under different light intensity conditions. Live/dead staining images of 2D cultured cells at (<b>a</b>) day 4 and (<b>b</b>) day 7, where green fluorescence indicates live cells and red fluorescence indicates dead cells, showing decreased cell density with increasing light intensity (scale bar: 300 μm). (<b>c</b>) MTT assay results demonstrating cell proliferation over 7 days, with control and 10 K lux conditions showing significantly higher proliferation by day 7 (ns: not significant, * <span class="html-italic">p</span> &lt; 0.05, ** <span class="html-italic">p</span> &lt; 0.01) (<span class="html-italic">n</span> = 3).</p>
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<p>Cell behavior and matrix interactions in 3D photocrosslinked collagen hydrogels. (<b>a</b>) Phase contrast microscopy images showing cell morphological changes from day 0 to day 7 (scale bar: 75 μm). Live/dead staining images at (<b>b</b>) day 4 and (<b>c</b>) day 7, demonstrating cell viability and morphological differences, where green fluorescence indicates live cells and red fluorescence indicates dead cells (scale bar: 300 μm). (<b>d</b>) MTT assay results showing significant differences in cell proliferation over 7 days (** <span class="html-italic">p</span> &lt; 0.01, *** <span class="html-italic">p</span> &lt; 0.001, **** <span class="html-italic">p</span> &lt; 0.0001) (<span class="html-italic">n</span> = 3).</p>
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12 pages, 4475 KiB  
Article
Integrated Photonic Processor Implementing Digital Image Convolution
by Chensheng Wang, Wenhao Wu, Zhenhua Wang, Zhijie Zhang, Wei Xiong and Leimin Deng
Electronics 2025, 14(4), 709; https://doi.org/10.3390/electronics14040709 - 12 Feb 2025
Viewed by 407
Abstract
Upon the advent of the big data era, information processing hardware platforms have undergone explosive development, facilitating unprecedented computational capabilities while significantly reducing energy consumption. However, conventional electronic computing hardware, despite significant upgrades in architecture optimization and chip scaling, still faces fundamental limitations [...] Read more.
Upon the advent of the big data era, information processing hardware platforms have undergone explosive development, facilitating unprecedented computational capabilities while significantly reducing energy consumption. However, conventional electronic computing hardware, despite significant upgrades in architecture optimization and chip scaling, still faces fundamental limitations in speed and energy efficiency due to Joule heating, electromagnetic crosstalk, and capacitance. A new type of information processing hardware is urgently needed for emerging data-intensive applications such as face identification, target tracking, and autonomous driving. Recently, integrated photonics computing architecture, which possesses remarkable compactness, wide bandwidth, low latency, and inherent parallelism, has harvested great attention due to its enormous potential to accelerate parallel data processing, such as digital image convolution. In this study, an integrated photonic processor based on a Mach-Zehnder interferometer (MZI) network is proposed and demonstrated. The processor, being scalable and compatible with complementary metal oxide semiconductors, facilitates mass production and seamless integration with other silicon-based optoelectronic devices. An experimental verification for digital image convolution is also performed, and the result deviations between our processor and a commercial 64-bit computer are less than 2.3%. Full article
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<p>The schematic of the photonic computing chip. The red components signify the input/output optical signals, whereas the purple section represents the silicon waveguide. Positioned on the waveguide, the blue squares denote the thermal phase shifters. Furthermore, the gold squares indicate the metal bond pads, which are interconnected to the thermal phase shifters on-chip and external driving circuit through a wire-bonding process (not illustrated in the figure).</p>
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<p>(<b>a</b>) Schematics of the 1-to-4 power splitter. There is one MMI in the first stage and two in the second. (<b>b</b>) Schematic of an MZI unit.</p>
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<p>(<b>a</b>) Microscope images of the fabricated photonic computing chip using the CMOS process. (<b>b</b>) The fabricated reference MZI switch. When light is introduced through the upper port, the output port situated above is termed the “Through” port, while the port positioned below is designated as the “Cross” port. (<b>c</b>) Magnified perspective of the thermal phase shifter.</p>
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<p>The measured transmission spectra of the MZI switch in (<b>a</b>) the “ON” state and (<b>b</b>) the “OFF” state. (<b>c</b>) The optical response of the MZI switch when driven by a 10 kHz square wave electrical signal.</p>
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<p>(<b>a</b>–<b>d</b>) The relationship between the normalized output of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>M</mi> <mi>Z</mi> <mi>I</mi> </mrow> <mrow> <mi>i</mi> </mrow> </msub> </mrow> </semantics></math> (<span class="html-italic">i</span> = 1, 2, 3, 4) in Part (2) and the electric power applied, respectively.</p>
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<p>Experimental setup of the digital image convolution function verification platform. PD: photodetector; ADC/DAC: analog to digital converter/digital to analog converter.</p>
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<p>The image convolution results of the 64-bit upper computer and photonic computing chip. The operations in the figure, from left to right, are blurring, extracting vertical edges, extracting horizontal edges, and enhancing oblique edges.</p>
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23 pages, 25753 KiB  
Article
A Lightweight Deep Learning Approach for Detecting External Intrusion Signals from Optical Fiber Sensing System Based on Temporal Efficient Residual Network
by Yizhao Wang, Ziye Guo, Haitao Luo, Jing Liu and Ruohua Zhou
Algorithms 2025, 18(2), 101; https://doi.org/10.3390/a18020101 - 11 Feb 2025
Viewed by 370
Abstract
Deep neural networks have been widely applied to fiber optic sensor systems, where the detection of external intrusion in metro tunnels is a major challenge; thus, how to achieve the optimal balance between resource consumption and accuracy is a critical issue. To address [...] Read more.
Deep neural networks have been widely applied to fiber optic sensor systems, where the detection of external intrusion in metro tunnels is a major challenge; thus, how to achieve the optimal balance between resource consumption and accuracy is a critical issue. To address this issue, we propose a lightweight deep learning model, the Temporal Efficient Residual Network (TEResNet), for the detection of anomalous intrusion. In contrast to the majority of two-dimensional convolutional approaches, which require a deep architecture to encompass both low- and high-frequency domains, our methodology employs temporal convolutions and a compact residual network architecture. This allows the model to incorporate lower-level features into the higher-level feature formation in subsequent layers, leveraging informative features from the lower layers, and thus reducing the number of stacked layers for generating high-level features. As a result, the model achieves a superior performance with a relatively small number of layers. Moreover, the two-dimensional feature map is reduced in size to reduce the computational burden without adding parameters. This is crucial for enabling rapid intrusion detection. Experiments were conducted in the construction environment of the Guangzhou Metro, resulting in the creation of a dataset containing 6948 signal segments, which is publicly accessible. The results demonstrate that TEResNet outperforms the existing intrusion detection methods and advanced deep learning networks, achieving an accuracy of 97.12% and an F1 score of 96.15%. With only 48,009 learnable parameters, it provides an efficient and reliable solution for intrusion detection in metro tunnels, aligning with the growing demand for lightweight and robust information processing systems. Full article
(This article belongs to the Special Issue Algorithms for Smart Cities (2nd Edition))
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<p>Components of the TEResNet-based fiber optic sensing external intrusion detection system.</p>
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<p>Quasi-distributed fiber optic sensing-based external intrusion detection system for metro tunnels.</p>
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<p>Geometry of metro tunnels and sensor mounting points and percussion tap settings.</p>
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<p>Three ways to mount the optical fiber acceleration sensor.</p>
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<p>Example of signals acquired at mounting points (<b>A</b>–<b>C</b>), with five percussive taps at PT1 and PT2, respectively (vertical pipe wall mounting).</p>
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<p>Initial data labeling map based on time and frequency domain information, where the window size is set to 128 and the step size is 20.</p>
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<p>Schematic of data segmentation with a window size of 512 and a stride of 50.</p>
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<p>Some of the signals in the training and test datasets. (<b>a</b>) Normal samples in the training set; (<b>b</b>) abnormal samples in the training set; (<b>c</b>) normal samples in the test set; and (<b>d</b>) abnormal samples in the test set.</p>
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<p>Time and frequency domain plots of intrusion signals in a construction environment, where inside the red box are signals that could threaten the metro, and outside the red box is noise. (<b>a</b>) Time domain map of the intrusion signal; (<b>b</b>) frequency domain map of the intrusion signal with a window size of 128 and a sliding step of 20.</p>
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<p>The structure of the proposed TEResNet, where the first convolutional layer has a 3 × 1 convolutional kernel and the others are 9 × 1.</p>
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<p>The difference between 2D convolution and temporal convolution. (<b>a</b>) STFT feature map; (<b>b</b>) conventional 2D convolution; (<b>c</b>) temporal convolution.</p>
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<p>The difference between 2D convolution and dilate convolutions. (<b>a</b>) Conventional 2D convolution; (<b>b</b>) dilated convolution with a dilated factor of 2.</p>
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<p>The loss function curves and performance of the model with four sets of parameters. (<b>a</b>) Loss function curves; (<b>b</b>) the accuracy and number of model parameters.</p>
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<p>The loss and accuracy curves for conditions using and not using the dilated convolution of parameter 3. (<b>a</b>) Loss curves; (<b>b</b>) accuracy curves.</p>
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<p>Confusion matrix of the proposed network, existing external intrusion detection networks, and state-of-the-art deep learning networks.</p>
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<p>Comparison of F1 scores and model parameters across different methods for external intrusion detection.</p>
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<p>Correctly and misclassified abnormal samples with output probabilities and spectrogram visualizations.</p>
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<p>Real-time output probability and raw signal amplitude visualization of the external intrusion detection model, where the red dots represent the time corresponding to the percussive tap.</p>
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<p>Real-time output probabilities and raw signal amplitude visualization of the external intrusion detection model under more difficult conditions, where the red dots represent the time corresponding to the percussive tap.</p>
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36 pages, 11202 KiB  
Article
Deep Learning-Driven Single-Lead ECG Classification: A Rapid Approach for Comprehensive Cardiac Diagnostics
by Mohamed Ezz
Diagnostics 2025, 15(3), 384; https://doi.org/10.3390/diagnostics15030384 - 6 Feb 2025
Viewed by 569
Abstract
Background/Objectives: This study aims to address the critical need for accessible, early, and accurate cardiac di-agnostics, especially in resource-limited or remote settings. By shifting focus from traditional multi-lead ECG analysis to single-lead ECG data, this research explores the potential of advanced deep [...] Read more.
Background/Objectives: This study aims to address the critical need for accessible, early, and accurate cardiac di-agnostics, especially in resource-limited or remote settings. By shifting focus from traditional multi-lead ECG analysis to single-lead ECG data, this research explores the potential of advanced deep learning models for classifying cardiac conditions, including Nor-mal, Abnormal, Previous Myocardial Infarction (PMI), and Myocardial Infarction (MI). Methods: Five state-of-the-art deep learning architectures—Inception, DenseNet201, MobileNetV2, NASNetLarge, and VGG16—were systematically evaluated on individual ECG leads. Key performance metrics, such as model accuracy, inference time, and size, were analyzed to determine the optimal configurations for practical applications. Results: VGG16 emerged as the most accurate model, achieving an F1-score of 98.11% on lead V4 with a prediction time of 4.2 ms and a size of 528 MB, making it suitable for high-precision clinical settings. MobileNetV2, with a compact size of 13.4 MB, offered a balanced performance, achieving a 97.24% F1-score with a faster inference time of 3.2 ms, positioning it as an ideal candidate for real-time monitoring and telehealth applications. Conclusions: This study bridges a critical gap in cardiac diagnostics by demonstrating the feasibility of lightweight, scalable, single-lead ECG analysis using advanced deep learning models. The findings pave the way for deploying portable diagnostic tools across diverse settings, enhancing the accessibility and efficiency of cardiac care globally. Full article
(This article belongs to the Section Machine Learning and Artificial Intelligence in Diagnostics)
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<p>Electrode placement and single-lead ECG integration with wearable devices. (<b>a</b>) Electrode placement for precordial leads (V1 to V6) with red circles over the chest wall. (<b>b</b>) Single-lead ECG integration via wearables.</p>
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<p>Sample ECG images for each cardiac condition in the dataset: (<b>A</b>) Normal, (<b>B</b>) Abnormal, (<b>C</b>) PMI, and (<b>D</b>) MI. These examples showcase the diverse signal patterns used for classification.</p>
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<p>Framework for single ECG lead analysis using deep learning models for cardiac condition diagnosis.</p>
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<p>ECG model–lead analysis.</p>
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<p>Analysis of ECG leads with cardiac models.</p>
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<p>Performance/time analysis for ECG models.</p>
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<p>Optimal model/lead performance analysis.</p>
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<p>Training curves for VGG16 with lead V4. These curves demonstrate consistent convergence within 100 epochs, with early stopping ensuring efficient training. (<b>a</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 0. (<b>b</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 1. (<b>c</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 2. (<b>d</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 3. (<b>e</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 4.</p>
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<p>Training curves for VGG16 with lead V4. These curves demonstrate consistent convergence within 100 epochs, with early stopping ensuring efficient training. (<b>a</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 0. (<b>b</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 1. (<b>c</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 2. (<b>d</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 3. (<b>e</b>) The training and validation accuracy/loss curves for VGG16 with lead V4 across fold 4.</p>
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<p>Training curves for MobileNetV2 with lead V4. These curves highlight MobileNetV2’s lightweight design, which enables slightly faster convergence, while maintaining high accuracy and stability across folds. (<b>a</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 0. (<b>b</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 1. (<b>c</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 2. (<b>d</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 3. (<b>e</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 4.</p>
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<p>Training curves for MobileNetV2 with lead V4. These curves highlight MobileNetV2’s lightweight design, which enables slightly faster convergence, while maintaining high accuracy and stability across folds. (<b>a</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 0. (<b>b</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 1. (<b>c</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 2. (<b>d</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 3. (<b>e</b>) The training and validation accuracy/loss curves for MobileNetV2 with lead V4 across fold 4.</p>
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19 pages, 2276 KiB  
Article
A Broadband Mode Converter Antenna for Terahertz Communications
by Biswash Paudel, Xue Jun Li and Boon-Chong Seet
Electronics 2025, 14(3), 551; https://doi.org/10.3390/electronics14030551 - 29 Jan 2025
Viewed by 553
Abstract
The rise of artificial intelligence (AI) necessitates ultra-fast computing, with on-chip terahertz (THz) communication emerging as a key enabler. It offers high bandwidth, low power consumption, dense interconnects, support for multi-core architectures, and 3D circuit integration. However, transitioning between different waveguides remains a [...] Read more.
The rise of artificial intelligence (AI) necessitates ultra-fast computing, with on-chip terahertz (THz) communication emerging as a key enabler. It offers high bandwidth, low power consumption, dense interconnects, support for multi-core architectures, and 3D circuit integration. However, transitioning between different waveguides remains a major challenge in THz systems. In this paper, we propose a THz band mode converter that converts from a rectangular waveguide (RWG) (WR-0.43) in TE10 mode to a substrate-integrated waveguide (SIW) in TE20 mode. The converter comprises a tapered waveguide, a widened waveguide, a zigzag antenna, and an aperture coupling slot. The zigzag antenna effectively captures the electromagnetic (EM) energy from the RWG, which is then coupled to the aperture slot. This coupling generates a quasi-slotline mode for the electric field (E-field) along the longitudinal side of the aperture, exhibiting odd symmetry akin to the SIW’s TE20 mode. Consequently, the TE20 mode is excited in the symmetrical plane of the SIW and propagates transversely. Our work details the mode transition principle through simulations of the EM field distribution and model optimization. A back-to-back RWG TE10-to-TE10 mode converter is designed, demonstrating an insertion loss of approximately 5 dB over the wide frequency range band of 2.15–2.36 THz, showing a return loss of 10 dB. An on-chip antenna is proposed which is fed by a single higher-order mode of the SIW, achieving a maximum gain of 4.49 dB. Furthermore, a balun based on the proposed converter is designed, confirming the presence of the TE20 mode in the SIW. The proposed mode converter demonstrates its feasibility for integration into a THz-band high-speed circuit due to its efficient mode conversion and compact planar design. Full article
(This article belongs to the Special Issue Broadband Antennas and Antenna Arrays)
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<p>Simulated dispersion curves of SIW.</p>
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<p>Electric field distribution at 2.25 THz of (<b>a</b>) <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> and (<b>b</b>) <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> modes in the SIW.</p>
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<p>RWG <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> mode to SIW <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode converter: (<b>a</b>) isometric view, (<b>b</b>) zigzag antenna, (<b>c</b>) top view, and (<b>d</b>) side view.</p>
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<p>Electric field distribution for (<b>a</b>) quasi-slotline mode and (<b>b</b>) <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> SIW mode.</p>
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<p>Simulated E-field distribution of the proposed RWG <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> mode to SIW <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode converter at (<b>a</b>) 2.16, (<b>b</b>) 2.25, and (<b>c</b>) 2.35 THz.</p>
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<p>Simulated E-field distribution of the proposed converter at 2.25 THz when the SIW was applied in (<b>a</b>) <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> and (<b>b</b>) <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>30</mn> </msub> </mrow> </semantics></math> mode.</p>
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<p>An isometric view of the proposed back-to-back <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math>–<math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> mode converter.</p>
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<p>Simulated |S<sub>11</sub>| (TE<sub>10</sub>–TE<sub>10</sub>) of the back-to-back converter at different values for (<b>a</b>) <math display="inline"><semantics> <msub> <mi>l</mi> <mn>2</mn> </msub> </semantics></math> and (<b>b</b>) <math display="inline"><semantics> <msub> <mi>l</mi> <mn>3</mn> </msub> </semantics></math> and |S<sub>21</sub>| (TE<sub>10</sub>–TE<sub>10</sub>) at different values for (<b>c</b>) the angle between two arms of the zigzag antenna and (<b>d</b>) the number of arms in the zigzag antenna.</p>
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<p>Equivalent circuit for the proposed RWG <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> to SIW <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode converter.</p>
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<p>Flowchart for the design process of the proposed RWG <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>10</mn> </msub> </mrow> </semantics></math> to SIW <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode converter.</p>
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<p>Antenna geometry: (<b>a</b>) top view and (<b>b</b>) side view.</p>
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<p>Simulated results of antenna performance: (<b>a</b>) reflection coefficient <math display="inline"><semantics> <mrow> <mrow> <mo>|</mo> </mrow> <msub> <mi>S</mi> <mn>11</mn> </msub> <mrow> <mo>|</mo> </mrow> </mrow> </semantics></math> and (<b>b</b>) gain at different thickness of the dielectric substrate (<math display="inline"><semantics> <msub> <mi>h</mi> <mi>dr</mi> </msub> </semantics></math>); (<b>c</b>) reflection coefficient <math display="inline"><semantics> <mrow> <mrow> <mo>|</mo> </mrow> <msub> <mi>S</mi> <mn>11</mn> </msub> <mrow> <mo>|</mo> </mrow> </mrow> </semantics></math> and (<b>d</b>) gain at different thickness of the supporter (<math display="inline"><semantics> <msub> <mi>h</mi> <mi>sup</mi> </msub> </semantics></math>).</p>
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<p>Isometric view of E-field of <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode SIW overlay with 3D radiation plot.</p>
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<p>Isometric view of the proposed balun based on the <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode of an SIW. The major dimensions are <math display="inline"><semantics> <msub> <mi>l</mi> <mn>3</mn> </msub> </semantics></math> = <math display="inline"><semantics> <mn>41.25</mn> <mi mathvariant="sans-serif">μ</mi> </semantics></math>m and <math display="inline"><semantics> <mi>β</mi> </semantics></math> = <math display="inline"><semantics> <mrow> <msup> <mn>45</mn> <mo>∘</mo> </msup> </mrow> </semantics></math>, with the rest provided in <a href="#electronics-14-00551-t001" class="html-table">Table 1</a>.</p>
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<p>Simulated E-field distribution of THz SIW balun based on <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode.</p>
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<p>Simulated results of THz SIW balun based on <math display="inline"><semantics> <mrow> <msub> <mi>TE</mi> <mn>20</mn> </msub> </mrow> </semantics></math> mode. (<b>a</b>) <span class="html-italic">S</span>-parameter, (<b>b</b>) phase of port 2 and 3, (<b>c</b>) amplitude imbalance between balanced ports, and (<b>d</b>) phase imbalance between balanced ports.</p>
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9 pages, 2063 KiB  
Brief Report
Optimization of Tomato Shoot Architecture by Combined Mutations in the Floral Activators FUL2/MBP20 and the Repressor SP
by Xiaobing Jiang, María Jesús López-Martín, Concepción Gómez-Mena, Cristina Ferrándiz and Marian Bemer
Int. J. Mol. Sci. 2025, 26(3), 1161; https://doi.org/10.3390/ijms26031161 - 29 Jan 2025
Viewed by 452
Abstract
Shoot determinacy is a key trait affecting productivity in tomato, quantitatively governed by genes within the flowering pathway. Achieving an optimal balance of flowering signals is essential for shaping plant architecture and maximizing yield potential. However, the genetic resources and allelic diversity available [...] Read more.
Shoot determinacy is a key trait affecting productivity in tomato, quantitatively governed by genes within the flowering pathway. Achieving an optimal balance of flowering signals is essential for shaping plant architecture and maximizing yield potential. However, the genetic resources and allelic diversity available for fine-tuning this balance remain limited. In this work, we demonstrate the potential for directly manipulating shoot architecture by simultaneously targeting the flowering activating FRUITFULL(FUL)-like genes, FUL2 and MADS-BOX PROTEIN 20 (MBP20), and the flowering-repressing gene SELFPRUNING (SP). Loss of MBP20 in the sp background leads to additional inflorescences, while determinacy is largely maintained. However, additional mutation of FUL2 results in mainly indeterminate plants, which have faster sympodial cycling, leading to more compact growth and increased flower production. Our results provide a path to quantitative tuning of the flowering signals with a direct impact on shoot architecture and productivity. Full article
(This article belongs to the Special Issue Molecular Insights into Flower Gene Regulation)
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Figure 1

Figure 1
<p>Mutations in <span class="html-italic">SP</span> and <span class="html-italic">FUL2</span>/<span class="html-italic">MBP20</span> can be combined to create variation in shoot architecture compactness. (<b>A</b>) Sequences of <span class="html-italic">SP</span> alleles (a) obtained with CRISPR/cas9 using three guide RNAs (gRNAs), namely, <span class="html-italic">sp</span> (a1, a2), <span class="html-italic">sp</span> (a3, a4) <span class="html-italic">mbp20</span>, and <span class="html-italic">sp</span> (a5) <span class="html-italic">ful2 mbp20</span>. The <span class="html-italic">mbp20</span> and <span class="html-italic">ful2 mbp20</span> lines were previously generated [<a href="#B19-ijms-26-01161" class="html-bibr">19</a>]. The gRNA and protospacer-adjacent motif (PAM) sequences are shown in bold red and black, respectively. Deletions and insertions are indicated by blue dashes and blue font, respectively, and the lengths of sequence gaps are indicated in parentheses. (<b>B</b>) Quantification of primary shoot flowering time for wild-type (WT) and mutant plants. n: numbers of individual plants measured. <span class="html-italic">quad ful</span>: <span class="html-italic">ful1 ful2 mbp10 mbp20</span> quadruple mutant (generated in [<a href="#B19-ijms-26-01161" class="html-bibr">19</a>]). (<b>C</b>) Representative main shoots from all genotypes. Three-month-old plants are shown. L: leaf; D/ID: determinate and indeterminate growth. White bar: 5 cm. (<b>D</b>) Average leaf number in sympodial shoots across all genotypes, measured for the first five successive sympodial units. (<b>E</b>) Proportion of shoot determinacy of the genotypes. (<b>F</b>) Quantification of inflorescence numbers in determinate plants of <span class="html-italic">sp</span>, <span class="html-italic">sp mbp20</span>, and <span class="html-italic">sp ful2 mbp20</span> mutants. In (<b>B</b>,<b>D</b>,<b>F</b>), mean values (±SE) were compared between genotypes using one-way ANOVA followed by a post hoc LSD test. Statistical significance in (<b>F</b>) was assessed using the Wilcoxon rank-sum test. Different letters indicate significant differences at the <span class="html-italic">p</span> &lt; 0.05 level.</p>
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<p>Quantification of flower production. (<b>A</b>) Proportion of branched inflorescences per branching category for the indicated genotypes. The numbers (0–3) indicate the number of branching events. (<b>B</b>,<b>C</b>): Quantification of flower numbers per inflorescence and the total flower number per plant. In (<b>B</b>,<b>C</b>), mean values (±SD) were analyzed for statistical significance using a <span class="html-italic">t</span>-test. Significant differences compared to WT plants (<b>B</b>) and <span class="html-italic">sp</span> plants (<b>C</b>) are represented by asterisks: ** <span class="html-italic">p</span> &lt; 0.01. ns: non-significant.</p>
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<p>Gene expression analysis in the sympodial vegetative meristems. (<b>A</b>) Microdissection of the SYM stage was performed for gene expression analysis. Dashed line represents the boundary of the dissected tissue. White bar: 200 μm. (<b>B</b>,<b>C</b>) Gene expression of <span class="html-italic">FUL</span>-like genes (<b>B</b>) and <span class="html-italic">AP2</span>-like genes (<b>C</b>) in SYM detected by qRT-PCR. The values shown (mean ± SE) are the average of three replicates. Significant differences were calculated using a one-tailed Student’s <span class="html-italic">t</span> test (* <span class="html-italic">p</span> &lt; 0.05 and ** <span class="html-italic">p</span> &lt; 0.01).</p>
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<p>Model of shoot determinacy in relation to <span class="html-italic">FUL</span>-like flowering signals. When flowering signals are reduced, sympodial flowering is delayed, resulting in an indeterminate shoot growth habit.</p>
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16 pages, 8936 KiB  
Article
A Low-Noise CMOS Transimpedance-Limiting Amplifier for Dynamic Range Extension
by Somi Park, Sunkyung Lee, Bobin Seo, Dukyoo Jung, Seonhan Choi and Sung-Min Park
Micromachines 2025, 16(2), 153; https://doi.org/10.3390/mi16020153 - 28 Jan 2025
Viewed by 539
Abstract
This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µApp [...] Read more.
This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µApp (up to 1.06 mApp) without introducing signal distortions. This design methodology can eliminate the need for a power-hungry multi-stage limiting amplifier, hence significantly improving the power efficiency of LiDAR sensors. The practical implementation for this purpose is to insert a simple NMOS switch between the on-chip avalanche photodiode (APD) and the active feedback amplifier, which then can provide automatic on/off switching in response to variations of the input currents. In particular, the feedback resistor in the active feedback path should be carefully optimized to guarantee the circuit’s robustness and stability. To validate its practicality, the proposed CTLA chips were fabricated in a 180 nm CMOS process, demonstrating a transimpedance gain of 88.8 dBΩ, a −3 dB bandwidth of 629 MHz, a noise current spectral density of 2.31 pA/√Hz, an input dynamic range of 56.6 dB, and a power dissipation of 23.6 mW from a single 1.8 V supply. The chip core was realized within a compact area of 180 × 50 µm2. The proposed CTLA shows a potential solution that is well-suited for power-efficient LiDAR sensor systems in real-world scenarios. Full article
(This article belongs to the Special Issue Silicon Photonics–CMOS Integration and Device Applications)
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<p>Block diagrams of (<b>a</b>) a typical LiDAR sensor, (<b>b</b>) the proposed LiDAR system.</p>
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<p>Block diagrams of (<b>a</b>) a conventional SF-TIA and (<b>b</b>) the proposed CTLA.</p>
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<p>(<b>a</b>) Schematic diagram of the DF-TIA and (<b>b</b>) simulated frequency responses of the DF-TIA and a conventional SF-TIA for the same bandwidth.</p>
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<p>Schematic diagram of the inverter-based active feedback TIA.</p>
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<p>(<b>a</b>) Variation of the input resistance and the transimpedance gain with respect to the values of R<sub>F1</sub> and <math display="inline"><semantics> <mrow> <mi>α</mi> </mrow> </semantics></math>, and (<b>b</b>) schematic diagram of the I-OB.</p>
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<p>(<b>a</b>) Cross-sectional view of the P<sup>+</sup>/NW/DNW APD, and (<b>b</b>) layout of the on-chip APD.</p>
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<p>Layout of the proposed CTLA.</p>
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<p>(<b>a</b>) Simulated frequency response (i.e., transimpedance gain, bandwidth, and noise current spectral density) and (<b>b</b>) phase margin characteristic of the proposed CTLA.</p>
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<p>Simulated eye-diagrams of the CTLA at 300 Mb/s data rate with input currents of (<b>a</b>) 1 μA<sub>pp</sub>, (<b>b</b>) 100 μA<sub>pp</sub>, (<b>c</b>) 500 μA<sub>pp</sub>, and (<b>d</b>) 1.5 mA<sub>pp</sub>, respectively.</p>
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<p>Simulated pulse response of the CTLA for various input currents.</p>
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<p>Simulated current pulses at the input nodes of the CTLA, SF-TIA, and DF-TIA (pulse width: 5 ns).</p>
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<p>Chip photo of the proposed CTLA and its test setup.</p>
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<p>Measured frequency response of the CTLA.</p>
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<p>Measured output noise of the CTLA.</p>
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<p>Measured eye-diagrams of the CTLA at 300 Mb/s data rate with the input currents of (<b>a</b>) 165 μA<sub>pp</sub>, (<b>b</b>) 330 μA<sub>pp</sub>, (<b>c</b>) 665 μA<sub>pp</sub>, and (<b>d</b>) 1.35 mA<sub>pp</sub>, respectively.</p>
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<p>Measured eye-diagrams of the CTLA for the 2<sup>31</sup>-1 PRBS input current of 330 µA<sub>pp</sub> at different data rates of (<b>a</b>) 100 Mb/s, (<b>b</b>) 300 Mb/s, (<b>c</b>) 500 Mb/s, and (<b>d</b>) 700 Mb/s, respectively.</p>
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<p>Measured pulse response of the CTLA for input currents of (<b>a</b>) 2 µA<sub>pp</sub>, (<b>b</b>) 100 µA<sub>pp</sub>, (<b>c</b>) 400 µA<sub>pp</sub>, and (<b>d</b>) 1 mA<sub>pp</sub>, respectively.</p>
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