This letter reports on the development of an X-band GaN monolithic microwave integrated
circuit (MMIC) high-power amplifier (HPA) which achieves a power-added efficiency (PAE) of …

In this paper, GaN HEMT 1-chip high power amplifiers at S and C bands are presented, which
are featured by the cell division configuration. Spurious oscillations, which often occur for …

This paper describes a high efficiency and high output power GaN power amplifier for C-band
space applications. The amplifier uses on-chip harmonic tuned FETs to improve dc-to-rf …

This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT)
Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high …

We demonstrate that the surface Fermi level and surface recombination velocity in undoped
Ga As∕ n-type GaAs (i-Ga As∕ n-Ga As) epitaxial layer structures can be simultaneously …

We demonstrate the excellent performance of a 140 W AlGaN/GaN HEMT in the C-band,
which is passivated by a Cat-CVD SiN film. The interface trap density of the AlGaN surface …

A high-power protection GaN FET switch has been developed. Our invented switching circuit
utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, …

In this paper, modeling of frequency dispersion due to traps at two locations for GaN HEMT
is reported. The proposed trap circuit model is simple model which has two resistance(R)-…

The molecular orientation and spatial arrangement of all-trans-β-carotene in a spin-coated (SC)
film and in a mixed Langmuir-Blodgett (LB) film with barium stearate (1: 10) were studied …

This is the first report of catalytic vapor deposition (Cat-CVD) passivated AlGaN/GaN HEMT.
We have found out that the Cat-CVD passivation film with NH3 treatment greatly enhances …