Te-based chalcogenide materials for selector applications
A Velea, K Opsomer, W Devulder, J Dumortier, J Fan… - Scientific reports, 2017 - nature.com
The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory
arrays, can be achieved with an appropriate selector for correct information storage and …
arrays, can be achieved with an appropriate selector for correct information storage and …
Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
…, K Opsomer, NS Avasarala, W Devulder… - physica status solidi …, 2020 - Wiley Online Library
Density functional theory simulations are used to identify the structural factors that define the
material properties of ovonic threshold switches (OTS). They show that the nature of mobility…
material properties of ovonic threshold switches (OTS). They show that the nature of mobility…
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
W Devulder, K Opsomer, F Seidel… - … applied materials & …, 2013 - ACS Publications
We report the improved thermal stability of carbon alloyed Cu 0.6 Te 0.4 for resistive memory
applications. Copper–tellurium-based memory cells show enhanced switching behavior, …
applications. Copper–tellurium-based memory cells show enhanced switching behavior, …
In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO 2 and V 2 O 3 thin films
G Rampelberg, B De Schutter, W Devulder… - Journal of Materials …, 2015 - pubs.rsc.org
VO2 and V2O3 thin films have been prepared by controlled oxidation and reduction reactions
in the vanadium–oxygen system. During these reactions, crystalline phase formation and …
in the vanadium–oxygen system. During these reactions, crystalline phase formation and …
Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent …
…, GL Donadio, K Opsomer, W Devulder… - 2017 Symposium on …, 2017 - ieeexplore.ieee.org
We report on novel integrated Se-based Ovonic Threshold Switching selector devices, with
sizes down to 50nm, which can be operated reliably at high drive current densities, …
sizes down to 50nm, which can be operated reliably at high drive current densities, …
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
D Garbin, W Devulder, R Degraeve… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this work we explore the composition space of the Ovonic Threshold Switch (OTS)
selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-…
selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-…
Combinatorial study of Ag–Te thin films and their application as cation supply layer in CBRAM cells
W Devulder, K Opsomer, J Meersschaut… - ACS combinatorial …, 2015 - ACS Publications
In this work, we investigate binary Ag–Te thin films and their functionality as a cation supply
layer in conductive bridge random access memory devices. A combinatorial sputter …
layer in conductive bridge random access memory devices. A combinatorial sputter …
Material relaxation in chalcogenide OTS SELECTOR materials
Nature of the mobility-gap states in amorphous Ge-rich Ge 50 Se 50 was found to be related
to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material …
to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material …
Polarity-dependent threshold voltage shift in ovonic threshold switches: challenges and opportunities
…, S Kundu, H Hody, W Devulder… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
In this paper we investigate the operation of Si-Ge-As-Te Ovonic Threshold Switch (OTS)
selectors under bipolar pulses. We observe that the threshold voltage increases noticeably if …
selectors under bipolar pulses. We observe that the threshold voltage increases noticeably if …
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N …
We report on the reduction of leakage current at half threshold bias (I off1/2 ) down to the
1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices …
1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices …