UHF RFCPUs on flexible and glass substrates for secure RFID systems

…, H Takahashi, Y Shionoiri, T Atsumi… - IEEE journal of solid …, 2008 - ieeexplore.ieee.org
A radio frequency integrated circuit (RFIC) tag consisting of an 8 bit CPU, a 4 kB ROM, a 512B
SRAM, and an RF circuit, which communicates using 915 MHz UHF RF signals, has been …

RFCPUs on glass and plastic substrates fabricated by TFT transfer technology

…, N Kusumoto, Y Shionoiri, T Atsumi… - … Meeting, 2005. IEDM …, 2005 - ieeexplore.ieee.org
On the basis of the fabrication of a CPU on glass as a digital circuit presented in B. Lee et al.
(2003) and T. Ikeda et al. (2004), as well as the fabrication of a flexible CPU using a TFT …

Toll-like receptor (TLR) 2 induced through TLR4 signaling initiated by Helicobacter pylori cooperatively amplifies iNOS induction in gastric epithelial cells

K Uno, K Kato, T Atsumi, T Suzuki… - American Journal …, 2007 - journals.physiology.org
Cell-surface Toll-like receptors (TLRs) initiate innate immune responses, such as inducible
nitric oxide synthase (iNOS) induction, to microorganisms' surface pathogens. TLR2 and …

Peptic ulcers after the Great East Japan earthquake and tsunami: possible existence of psychosocial stress ulcers in humans

…, T Hoshi, N Sano, M Ohyauchi, H Ito, T Atsumi… - Journal of …, 2013 - Springer
Background Societal stress derived from an event that affects the whole society, eg, a
natural disaster, provides a unique, indirect way of determining the relationship between …

High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET

…, T Seki, R Tokumaru, T Atsumi… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
We developed FETs having gate lengths of 25 and 60 nm that are suited for high-temperature
operation, using c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) as its channel …

A -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

…, H Kimura, R Tokumaru, T Atsumi… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel
material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a …

In-Ga-Zn-oxide semiconductor and its transistor characteristics

S Yamazaki, T Atsumi, K Dairiki… - ECS Journal of Solid …, 2014 - iopscience.iop.org
It is revealed that c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) and nanocrystalline
IGZO films have high-density crystalline morphologies (5.9− 6.3 g/cm 3) and are very stable …

Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

…, H Kimura, T Murakawa, T Atsumi… - … Journal of Ceramic …, 2019 - Wiley Online Library
In 2009, a crystalline oxide semiconductor with a layered structure, which we refer to as c‐axis–aligned
crystalline indium‐gallium‐zinc oxide ( CAAC ‐ IGZO ), was first discovered. …

DRAM using crystalline oxide semiconductor for access transistors and not requiring refresh for more than ten days

T Atsumi, S Nagatsuka, H Inoue, T Onuki… - 2012 4th IEEE …, 2012 - ieeexplore.ieee.org
We fabricated a dynamic random access memory (DRAM) using crystalline oxide semiconductor
(OS) transistors and not requiring refresh for more than ten days. We call this memory a …

Accommodation in a refugee shelter as a risk factor for peptic ulcer bleeding after the Great East Japan Earthquake: a case–control study of 329 patients

…, T Hoshi, N Sano, M Ohyauchi, H Ito, T Atsumi… - Journal of …, 2015 - Springer
Background We have reported that the total number of peptic ulcers (PUs) had increased 1.5-fold
after the Great East Japan Earthquake compared with those of the previous year, and …