Integrated electronics has come a long way since the invention of the transistor in 1947 and
the fabrication of the first integrated circuit in 1958. Given feature sizes as small as a few …

Recently there has been tremendous progress made in the research of novel nanotechnology
for future nanoelectronic applications. In particular, several emerging nanoelectronic …

The Intel's Core 2 microprocessors, based on the latest 45-nanometer CMOS process
technology have more transistors and run faster and cooler than microprocessors fabricated with …

We show experimental evidence of surface phonon scattering in the high-/spl kappa/ dielectric
being the primary cause of channel electron mobility degradation. Next, we show that …

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length,
strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-…

Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si
increases saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (…

In this paper we show a Depleted-Substrate Transistor (DST) technology which demonstrates
significant performance gain over bulk Si transistors without the floating body effect (FBE). …

This work demonstrates the steepest subthreshold swing (SS <; 60mV/decade) ever reported
in a III-V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction …

We have combined the benefits of the fully depleted tri-gate transistor architecture with high-k
gate dielectrics, metal gate electrodes and strain engineering. High performance NMOS …

This work looks at past, present, and future material changes for the metal-oxide-semiconductor
field-effect transistor (MOSFET). It is shown that conventional planar bulk MOSFET …