Resistive random access memory (RRAM) devices are receiving increasing extensive attention
due to their enhanced properties such as fast operation speed, simple device structure, …

An all-in-one artificial synapse integrating central nervous and sensory nervous functions
utilizing low-dimensional metal-oxide heterojunction is demonstrated in this work. With an ion-…

The highly parallel artificial neural systems based on transistor‐like devices have recently
attracted widespread attention due to their high‐efficiency computing potential and the ability …

Human central nervous system and the peripheral nervous system have played significant
roles in mediating the interactions with the outside world. Inspired by the human nervous …

At present, the dominating electron transport material (ETL) and hole transport material (HTL)
used in the state‐of‐the‐art perovskite solar cells (PSCs) are tin oxide and 2,2′,7,7′‐…

The great challenges for existing wearable pressure sensors are the degradation of sensing
performance and weak interfacial adhesion owing to the low mechanical transfer efficiency …

Ellipsometry was used to measure the amplitude ratio and phase difference of light undergoing
a phase shift as it interacts with a thin film of organic–inorganic hybrid perovskite CH 3 …

An appropriate electron transport layer (ETL) with better energy alignment and enhanced
charge transfer, thereby helping efficient extraction and transport of photogenerated carriers, is …

A vapour-phase reaction process has been used to deposit smooth and uniform CH 3 NH 3
PbI 3 perovskite material to enable the measurement of its optical dispersion relations, n and …

Resistive random access memory (RRAM) devices with Ni/AlO x /Pt-structure were manufactured
by deposition of a solution-based aluminum oxide (AlO x ) dielectric layer which was …