18-GHz band low-power LC VCO IC using LC bias circuit in 56-nm SOI CMOS

X Xu, C Chen, T Sugiura… - 2017 IEEE Asia Pacific …, 2017 - ieeexplore.ieee.org
This paper presents a novel 18-GHz band 0.5 V Class-C pMOSFET LC-VCO IC. The LC-VCO
IC consists of an oscillator core circuit with a cross-coupled pMOSFETs and an LC bias …
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A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

C Chen, X Xu, X Yang, T Sugiura… - 2017 IEEE 17th …, 2017 - ieeexplore.ieee.org
A high efficiency broadband power amplifier IC is proposed for wireless communication
systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector …
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A DC-50 GHz, low insertion loss and high P1dB SPDT switch IC in 40-nm SOI CMOS

C Chen, X Xu, T Yoshimasu - 2017 IEEE Asia Pacific …, 2017 - ieeexplore.ieee.org
A DC-50 GHz Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully
evaluated on wafer in 40-nm SOI CMOS. The insertion loss of the SPDT switch IC is 0.99 dB …
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A 28-GHz-band highly linear stacked-FET power amplifier IC with high back-off PAE in 56-nm SOI CMOS

C Chen, T Sugiura, T Yoshimasu - IEICE Transactions on …, 2020 - search.ieice.org
This paper presents a 28-GHz-band highly linear stacked-FET power amplifier (PA) IC. A 4-stacked-FET
structure is employed for high output power considering the low breakdown …
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A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

C Chen, F Tuo, X Xu… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and
fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT …
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A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2% PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

C Chen, T Sugiura, T Yoshimasu - 2019 IEEE Radio and …, 2019 - ieeexplore.ieee.org
This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless
communication systems. An adaptive bias circuit is used to enhance linearity and back-…
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A 14-GHz-band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

C Chen, T Sugiura, T Yoshimasu - 2018 13th European …, 2018 - ieeexplore.ieee.org
A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless
communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is …
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A 26-GHz-band high efficiency stacked-FET power amplifier IC with adaptively controlled load and bias circuits in 40-nm SOI CMOS

T Sugiura, C Chen, T Yoshimasu - 2019 IEEE Asia-Pacific …, 2019 - ieeexplore.ieee.org
This paper presents a 26 GHz band high efficiency power amplifier (PA) IC with adaptively
controlled load and bias conditions. An adaptively controlled load matching circuit …
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Resolving batch chromatographic overlapping peaks of flavoring essence using stepwise key spectrum selection

H Kong, C Chen, L Peng, F Gan - Journal of Chromatography A, 2011 - Elsevier
Stepwise key spectrum selection (SKSS) was introduced to resolve batch overlapping
peaks from gas chromatography–mass spectrometry (GC–MS) analysis of ten batch tobacco …
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A 30-GHz band high-efficiency class-j power amplifier IC in 120-nm SiGe HBT technology

C Chen, X Yang, T Yoshimasu - 2016 IEEE international …, 2016 - ieeexplore.ieee.org
A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm
SiGe HBT process. The impedances of the output matching network are optimized at both the …
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