Caractérisation de défauts latents dans les circuits intégrés soumis à des décharges électrostatiques

N Guitard - 2006 - theses.hal.science
Les agressions électriques, du type décharges électrostatiques (ESD) et surcharges électriques
(EOS), sont à l'origine de plus de 50% des défaillances des circuits intégrés. De plus, …

BIMOS transistor and its applications in ESD protection in advanced CMOS technology

…, A Dray, G Troussier, B Heitz, N Guitard… - … Conference on IC …, 2012 - ieeexplore.ieee.org
BIMOS transistor is a useful device and now compliant in advanced CMOS technology. This
device acts with high controlled current gain. Thus, it is an efficient candidate for …

The French Nuclear Deterrence Adaptation to the Post-World War II Strategic Environment

G Guitard - 2023 - dspace.cuni.cz
… thesis Author: Gaëlle Guitard Study program: Security Studies Supervisor: prof. Ph.D. …
Year of the defense: 2023 2 References GUITARD, Gaëlle. The French nuclear deterrence …

Investigation of product burn-in failures due to powered NPN bipolar latching of active MOSFET rail clamps

…, P Colombo, M Cordoni, N Guitard - 2013 35th Electrical …, 2013 - ieeexplore.ieee.org
A product utilizing 5V RC clamps suffered EOS damage during BI due to marginal V hold of
the clamp NMOS. Powered TLP was used to mimic BI noise events and to explain clamp …

ESD induced latent defects in CMOS ICs and reliability impact

N Guitard, D Trémouilles, S Alves… - 2004 Electrical …, 2004 - ieeexplore.ieee.org
A dedicated test vehicle was designed to study the impact of ESD induced latent defects on
digital and analog CMOS circuits. Both CDM and TLP stresses were applied to these circuits …

Evaluating employment policies: four essays

J Guitard - 2009 - theses.hal.science
This thesis provides a structural evaluation of microeconomic effects of two policies of the
PARE (Policies package for Return to Employment) put work in France since 2001, counseling …

TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology

…, M Bafleur, F Beaudoin, P Perdu, N Guitard… - Microelectronics …, 2003 - Elsevier
The number of circuit design iterations due to electrostatic discharge (ESD) failures increases
with the complexity of VLSI technologies and their shrinking. In this paper, we show how …

Ultracompact ESD protection with BIMOS-merged dual back-to-back SCR in hybrid bulk 28-nm FD-SOI advanced CMOS technology

P Galy, J Bourgeat, N Guitard, JD Lise… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge
(ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with …

Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration

…, C Fenouillet-Beranger, N Guitard… - Electrical Overstress …, 2010 - ieeexplore.ieee.org
We investigate the influence of different technological parameters on ESD robustness in
advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison …

De Spirou au bassin du lac Tchad, itinéraire d'un géographe dessinateur: Entretien avec Christian Seignobos. Appréhender les relations à la nature en Afrique par le …

E Guitard, C Seignobos - Sources: Materials & Fieldwork …, 2022 - journals.openedition.org
Guitard), ou a posteriori par l’artiste à partir des enquêtes ethnographiques de la chercheure
(comme Nicolas … 3Cet échange entre Christian Seignobos et Émilie Guitard témoigne des …