Bond insertion, complexation, and penetration pathways of vapor-deposited aluminum atoms with HO- and CH(3)O-terminated organic monolayers.
J Am Chem Soc. 2002 May 15;124(19):5528-41. doi: 10.1021/ja0123453.
J Am Chem Soc. 2002.
PMID: 11996596
By considering a previous observation that a CH(3) terminal group favors penetration as the dominant initial process, and using theory calculations of Al-molecule interaction energies, we suggest that the competition between the penetration and overlayer film nucleation channels …
By considering a previous observation that a CH(3) terminal group favors penetration as the dominant initial process, and using theory calcu …