WO2021051467A1

WO2021051467A1 - Semiconductor laser

Info

Publication number: WO2021051467A1
Application number: PCT/CN2019/112278
Authority: WO
Inventors: 周少丰; 刘鹏; 陈丕新
Original assignee: 深圳市星汉激光科技股份有限公司
Priority date: 2019-09-18
Filing date: 2019-10-21
Publication date: 2021-03-25
Also published as: CN110718848A

Abstract

A semiconductor laser, comprising: a polarization beam combiner (230, 330) provided with a transmission end face (231), a reflection end face (232) and an emission end face (233); a first light-emitting module (210, 310), laser light emitted thereby being transmitted through the polarization beam combiner (230, 330) from the transmission end face (231) to the emission end face (233); a second light-emitting module (220, 320), laser light emitted thereby entering the polarization beam combiner (230, 330) from the reflection end face (232), being reflected in the polarization beam combiner (230, 330), and then being emitted from the emission end face (233); a focusing lens (240, 340) used for receiving laser light emitted from the emission end face (233); and an optical fiber (250, 350) used for receiving laser light emitted from the focusing lens (240, 340). By simply adjusting positions of the first light-emitting module (210, 310) and the second light-emitting module (220, 320) with respect to the polarization beam combiner (230, 330), laser beams emitted by the two modules and emitted from the emission end face (233) can basically coincide, so that the brightness and quality of the laser light are high.

Description

A semiconductor laser

Technical field

The embodiments of the present application relate to the field of laser technology, and in particular to a semiconductor laser.

Background technique

With the rapid development of science and technology, the application of semiconductor lasers has been widely promoted. In recent years, in order to improve the performance of semiconductor lasers, its power has been continuously increased; and correspondingly, users expect to increase the power of semiconductor lasers while ensuring that they have high beam quality and high brightness performance.

At present, most of the semiconductor lasers on the market adopt a spatial beam combining structure. For details, see Figures 1 and 2, which respectively show a top view and a front view of a traditional semiconductor laser structure. The semiconductor laser 100 includes two or more parallel arranged in a row. The light emitting module 110, the focusing lens 120 for receiving and focusing the laser light emitted by the light emitting module 110, the optical fiber 130 for receiving the laser light emitted from the focusing lens 120, and the housing 140 for installing the above-mentioned components. Wherein, the light emitting module 110 includes a semiconductor laser chip 111, a fast axis collimating lens 112, a slow axis collimating lens 113, and a reflecting mirror 114 arranged in sequence. The laser light emitted by the semiconductor laser chip 111 passes through the fast axis collimating lens 112 and the slow axis in sequence. The axis collimator lens 113 and the reflecting mirror 114 reach the above-mentioned focusing lens 120. The housing 140 is provided with two or more carrying steps 141 that are staggered from each other in the height direction of FIG. 2. Among the two adjacent carrying steps 141, the carrying step 141 on the side close to the focusing lens 120 is lower than the one far away from the focusing lens 120. The light-emitting modules 110 correspond to the supporting steps 141 one-to-one, and are respectively arranged on the supporting steps 141, so that the laser light emitted by the light-emitting modules 110 are staggered with each other, so as to avoid being located on the side close to the focusing lens 120 The reflecting mirror 114 shields the laser light emitted by the light emitting module 110 on the side away from the focusing lens 120. In the process of realizing this application, the inventor of the present application discovered that in the framework of the traditional semiconductor laser structure, in order to increase the output power of the semiconductor laser, the semiconductor laser needs to correspondingly increase the number of semiconductor laser chips, but increasing the semiconductor laser chip will cause As a result, the size of the collimated beam in the height direction (Figure 2) is too large. Correspondingly, the NA value (the size of the cone angle when the laser enters the fiber) is also increased correspondingly, resulting in an insignificant increase in the brightness of the beam emitted by the optical fiber 130. The quality is low.

Summary of the invention

The purpose of this application is to provide a semiconductor laser to solve the current technical problems of the low brightness and quality of the emitted laser light of the semiconductor laser.

This application uses the following technical solutions to solve its technical problems:

A semiconductor laser, including:

Polarization beam combiner with transmission end face, reflection end face and exit end face;

The first light-emitting module is configured to emit laser light, and the laser light emitted by the first light-emitting module transmits through the polarization beam combiner from the transmission end surface to the emission end surface;

The second light-emitting module is configured to emit laser light. The laser light emitted by the second light-emitting module enters the polarization beam combiner from the reflecting end surface, is reflected in the polarization beam combiner, and then is emitted from the emission end surface ；

A focusing lens for receiving and focusing the laser light emitted from the emitting end surface;

The optical fiber is used to receive the laser light emitted from the focusing lens.

As a further improvement of the above technical solution, the first light-emitting module includes a first semiconductor laser chip, a first fast-axis collimating lens, and a first slow-axis collimating lens arranged in sequence, and the first semiconductor laser chip emits The laser light may pass through the first fast-axis collimating lens and the first slow-axis collimating lens in sequence.

As a further improvement of the above technical solution, the first light-emitting module further includes a first reflector, and the first reflector and the first fast-axis collimating lens are respectively provided on the first slow-axis collimating lens On both sides

The first reflecting mirror is used for receiving the laser light emitted from the first slow axis collimating lens, and reflecting the received laser light to the transmission end surface.

As a further improvement of the above technical solution, the second light emitting module includes a second semiconductor laser chip, a second fast axis collimating lens, and a second slow axis collimating lens arranged in sequence, and the second semiconductor laser chip emits The laser light can pass through the second fast axis collimating lens and the second slow axis collimating lens in sequence.

As a further improvement of the above technical solution, the second light emitting module further includes a second reflector, and the second reflector and the second fast axis collimating lens are respectively provided on the second slow axis collimating lens On both sides

The second reflecting mirror is used for receiving the laser light emitted from the second slow axis collimating lens, and reflecting the received laser light to the reflecting end surface.

As a further improvement of the above technical solution, it also includes a reflector;

The second light-emitting module further includes a second reflector, and the second reflector and the second fast-axis collimating lens are respectively disposed on both sides of the second slow-axis collimating lens, and the second reflector The mirror is used to receive the laser light emitted from the second slow axis collimating lens and reflect the received laser light to the reflector;

The reflector is used for receiving the laser light emitted from the second mirror and reflecting the received laser light to the reflecting end surface.

As a further improvement of the above technical solution, the number of the first light-emitting modules is more than two, and each of the first semiconductor laser chips of the two or more first light-emitting modules is along the height direction of the polarization beam combiner Staggered arrangement, the second light emitting module corresponds to the first light emitting module one-to-one, and the first semiconductor laser chip and the second semiconductor laser chip corresponding to each other are located at the same height relative to the polarization beam combiner.

As a further improvement of the above technical solution, the first light-emitting module and the second light-emitting module are arranged opposite to each other, and along the direction from the first reflector to the polarization beam combiner, the second light-emitting module and the second light-emitting module are opposite to each other. The first light-emitting modules are staggered with each other.

As a further improvement of the above technical solution, the first semiconductor laser chip and the second semiconductor laser chip are arranged opposite to each other;

Along the direction from the first reflecting mirror to the polarization beam combiner, the first semiconductor laser chip and the second semiconductor laser chip are staggered from each other;

Along the direction from the first semiconductor laser chip to the first slow axis collimating lens, the first semiconductor laser chip is located between the second semiconductor laser chip and the second slow axis collimating lens.

Along the direction from the first semiconductor laser chip to the first slow axis collimating lens, the second semiconductor laser chip is located between the first semiconductor laser chip and the first slow axis collimating lens.

The beneficial effects of this application are:

The semiconductor laser provided in this application includes a polarization beam combiner, a first light-emitting module, a second light-emitting module, a focusing lens, and an optical fiber. Wherein, the polarization beam combiner is provided with a transmission end face, a reflection end face and an emission end face; the laser light emitted by the first light-emitting module can be transmitted through the polarization beam combiner from the transmission end face to the emission end face; the laser light emitted by the second light-emitting module can be The reflection from the reflection end surface to the emission end surface passes through the polarization beam combiner.

Compared with the current semiconductor lasers on the market, the light-emitting modules are arranged in parallel in a row for beam combination. The semiconductor laser provided in the embodiment of the present application is equivalent to dividing the light-emitting module into two modules, namely: the first light-emitting module and the second light-emitting module. Module, wherein the laser light emitted by the first light-emitting module is transmitted through the polarization beam combiner from the transmission end face of the polarization beam combiner, and the laser light emitted by the second light-emitting module enters the polarization beam combiner from the reflection end face, and is inside the polarization beam combiner Reflected and ejected through the exit end face. With the help of the design of light-emitting module grouping, the number of the first light-emitting module and the second light-emitting module is less than that of the current semiconductor lasers on the market, so the first light-emitting module and the second light-emitting module emit laser light on the focusing lens. Both need to be more concentrated, and by simply adjusting the position of the first light-emitting module and the second light-emitting module relative to the polarization beam combiner, the laser beams emitted by the first light-emitting module and the second light-emitting module and emitted from the exit end face can basically coincide. Then reduce the NA value (the cone angle of the laser entering the fiber), so that the laser output from the fiber can be brighter and the beam quality is better.

Description of the drawings

In order to more clearly describe the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings that need to be used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative work, other drawings may be obtained based on the structure shown in these drawings.

Figure 1 is a top view of a conventional semiconductor laser;

Fig. 2 is a front view of the conventional semiconductor laser in Fig. 1;

FIG. 3 is a top view of a semiconductor laser provided by one of the embodiments of the application;

Fig. 4 is a front view of the semiconductor laser in Fig. 3;

Fig. 5 is a schematic diagram of the polarization beam combiner in Fig. 3;

FIG. 6 is a schematic diagram of the staggered arrangement of each first light-emitting module and each second light-emitting module in FIG. 3;

FIG. 7 is a top view of a semiconductor laser provided by another embodiment of the application.

detailed description

In order to facilitate the understanding of the application, the application will be described in more detail below in conjunction with the drawings and specific embodiments. It should be noted that when an element is expressed as being "fixed to"/"fixed to" another element, it can be directly on the other element, or there can be one or more central elements in between. When an element is said to be "connected" to another element, it can be directly connected to the other element, or there may be one or more intervening elements in between. The terms "vertical", "horizontal", "left", "right", "inner", "outer" and similar expressions used in this specification are for illustrative purposes only.

Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field of this application. The terminology used in the description of this application is only for the purpose of describing specific embodiments, and is not used to limit the application. The term "and/or" used in this specification includes any and all combinations of one or more related listed items.

In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

In this specification, the "installation" includes welding, screwing, clamping, bonding, etc. to fix or restrict a certain element or device to a specific position or place, and the element or device can be held in a specific position or place. It can also move within a limited range without moving, and the element or device can be disassembled or cannot be disassembled after being fixed or restricted to a specific position or place, which is not limited in the embodiment of the present application.

Please refer to FIGS. 3 to 4, which respectively show a top view and a front view of a semiconductor laser provided by one of the embodiments of the present application. The semiconductor laser 200 includes a first light emitting module 210, a second light emitting module 220, and a polarization beam combiner 230, a focusing lens 240, an optical fiber 250, a reflector 270, and a housing 260 for installing the above-mentioned components. The first light-emitting module 210 and the second light-emitting module 220 are both used to emit laser light. The laser light emitted by the first light-emitting module 210 passes through the polarization beam combiner 230 in a transmission manner and reaches the focusing lens 240. The second light-emitting module 220 The emitted laser light passes through the reflector 270 and the polarization beam combiner 230 in a reflective manner and reaches the above-mentioned focusing lens 240. The focusing lens 240 couples the laser light emitted by the first light-emitting module 210 and the second light-emitting module 220 and focuses and guides them to Fiber 250.

For the above-mentioned first light-emitting module 210, please refer to FIG. 3. The first light-emitting module 210 includes a first semiconductor laser chip 211, a first fast-axis collimating lens 212, a first slow-axis collimating lens 213, and a first semiconductor laser chip 211, which are arranged in sequence. Reflecting mirror 214, the laser light emitted by the first semiconductor laser chip 211 may sequentially pass through the first fast axis collimating lens 212, the first slow axis collimating lens 213, and the first reflecting mirror 214 to the polarization beam combiner 230. Wherein, the first fast axis collimating lens 212 and the first slow axis collimating lens 213 are both used to collimate the laser light emitted by the first light emitting module 210; the first mirror 214 and the first fast axis collimating lens 212 They are located on both sides of the first slow-axis collimating lens 213, and the first reflecting mirror 214 is used to receive the laser light emitted from the first slow-axis collimating lens 213 and reflect the laser light to the polarization beam combiner 230, that is, to The laser light emitted by a semiconductor laser chip 211 undergoes commutation processing. It can be understood that in other embodiments of the present application, the first light emitting module 210 may not include the first reflector 214, that is, the laser light emitted by the first semiconductor laser chip 211 directly passes through the first fast axis collimating lens. 212 and the first slow axis collimating lens 213 reach the polarization beam combiner 230.

The number of the first light emitting module 210 may be one or more than two. In this embodiment, the number of the first light emitting module 210 is three, and the three first light emitting modules 210 are arranged in parallel in a row.

In order to prevent the first mirror 214 on the side close to the polarization beam combiner 230 from blocking the laser light reflected by the first mirror 214 on the side away from the polarization beam combiner 230 and affecting the normal propagation of the light path, the housing 260 is provided with three The height of the first supporting step 261 relative to the bottom of the housing 260 is different. In this embodiment, the height of the three first supporting steps 261 gradually decreases from the end away from the polarization beam combiner 230 to the end close to the polarization beam combiner 230, and the three first light-emitting modules 210 are separately arranged at On the three first supporting steps 261, the light emitted by the three first light-emitting modules 210 through the respective first reflecting mirrors 214 are staggered with each other. It is understandable that in other embodiments of the present application, the light emitted by the first light-emitting modules can also be staggered with each other in other ways, as long as the first mirror points to the polarization beam combiner along the direction perpendicular to the first reflector, so that the first light-emitting modules point to the polarization beam combiner. The first mirrors of a light-emitting module can be staggered; for example, in some embodiments of the present application, the first light-emitting modules are arranged in a row in parallel, and are installed on the same height plane relative to the bottom of the housing, and then along the vertical The first mirror points to the direction of the polarization beam combiner, so that the first mirrors of the first light-emitting modules are staggered with each other, so that the laser light emitted by the first light-emitting modules is staggered with each other; another example: In some embodiments, the first light-emitting modules are arranged in a row in parallel along the height direction of the housing, so that the first mirrors of the first light-emitting modules are staggered with each other, so that the laser light emitted by the first light-emitting modules is staggered.

For the above-mentioned second light-emitting module 220, please refer to FIG. 3. The second light-emitting module 220 is arranged opposite to the first light-emitting module 210 and is similar to the first light-emitting module 210. The second light-emitting module 220 includes second semiconductor lasers arranged in sequence. Chip 221, the second fast axis collimating lens 222, the second slow axis collimating lens 223 and the second mirror 224, the laser light emitted by the second semiconductor laser chip 221 can pass through the second fast axis collimating lens 222, the second The slow axis collimating lens 223 and the second reflecting mirror 224. Among them, the second fast axis collimating lens 222 and the second slow axis collimating lens 223 are both used for collimating the laser light emitted by the second light emitting module 220; the second mirror 224 and the second fast axis collimating lens 222 They are located on both sides of the second slow-axis collimating lens 223, and the second reflecting mirror 224 is used to receive the laser light emitted from the second slow-axis collimating lens 223 and reflect the laser light to the reflector 270, that is, to The laser light emitted by the second semiconductor laser chip 221 undergoes commutation processing. It can be understood that in other embodiments of the present application, the second light emitting module 220 may not include the second reflector 224, that is, the laser light emitted by the second semiconductor laser chip 221 directly passes through the second fast axis collimating lens 222 and the second slow axis collimating lens 223 reach the reflector 270.

The number of the second light emitting module 220 may be one or more than two. In this embodiment, the number of the second light emitting module 220 is three, and the three second light emitting modules 220 are arranged in parallel in a row.

In order to prevent the second mirror 224 on the side close to the reflector 270 from blocking the laser light reflected by the second mirror 224 on the side away from the reflector 270 and affecting the normal propagation of the light path, the housing 260 is provided with three second carrying steps The three second bearing steps correspond to the above three first bearing steps 261 one-to-one, and the second bearing platform and first bearing step 261 corresponding to each other are located at the same height relative to the bottom of the housing 260. For details, refer to FIG. 3 The part shown by the dashed line in the middle, between the two adjacent dashed lines are the first bearing step 261 (the lower half of the dashed line in FIG. 3) and the second bearing platform (the upper half of the dashed line in FIG. 3) corresponding to each other. The arrangement of each second carrier can make the light emitted by each second light-emitting module 220 through the respective second reflector 224 stagger each other; at the same time, because the second light-emitting module 220 and the first light-emitting module 210 corresponding to each other are relatively polarized and combined The height of the laser light from the second light-emitting module 220 reflected by the reflector 270 to the polarization beam combiner 230 is the same as that of the laser light emitted by the first light-emitting module 210 reaching the polarization beam combiner 230 at the same height. The height is the same, that is: the height range of the laser light emitted by each first light-emitting module 210 and the laser light emitted by the second light-emitting module reaching the reflector 270 is the same, and the height range after passing through the polarization beam combiner 230 is also the same, so that it can Avoid the disadvantages of increasing the number of semiconductor laser chips, increasing the NA value, and unsatisfactory laser light brightness and quality. Taking six light-emitting modules as an example, the NA value of the semiconductor laser 200 provided in this embodiment is nearly half of the NA value of the traditional semiconductor laser 100, so the light quality and brightness of the semiconductor laser 200 provided in this embodiment are better than those of the traditional semiconductor laser. The laser 100.

It should be understood that in other embodiments of the present application, the light emitted by the second light-emitting modules can also be staggered with each other in other ways, as long as the second light-emitting module is perpendicular to the direction of the second reflector pointing to the reflector. The two mirrors can be staggered separately; for example, in some embodiments of the present application, the second light-emitting modules are arranged in a row in parallel, and are installed on the same height plane relative to the bottom of the housing, and then along the vertical direction from the second mirror Point to the direction of the reflector, so that the second mirrors of the second light-emitting modules are staggered with each other, so as to realize the staggering of the laser light emitted by the second light-emitting modules; for another example: in some other embodiments of the present application, the second mirrors of the second light-emitting modules are staggered. The two light-emitting modules are arranged in a row in parallel along the height direction of the casing, so that the second reflection mirrors of the second light-emitting modules are staggered with each other, so as to realize the staggering of the laser light emitted by the second light-emitting modules.

For the above-mentioned reflector 270, please refer to FIG. 3. The reflector 270 is used to receive the laser light emitted from each of the second light-emitting modules 220 and reflect the laser light received to the polarization beam combiner 230.

For the above-mentioned polarization beam combiner 230, refer to FIG. 5, which shows a schematic diagram of the polarization beam combiner 230. Combined with FIG. 3 and FIG. 4, the polarization beam combiner 230 is formed by glueing and fixing two triangular prisms arranged oppositely. , It is provided with a transmissive end surface 231, a reflective end surface 232, and an exit end surface 233. The transmissive end surface 231 is used to receive the laser light emitted from the first light-emitting module 210, and the reflective end surface 232 is used to receive the laser light emitted from the second light-emitting module 220 and reflected by the reflector 270. The laser light emitted from the light emitting module 220 and entered into the polarization beam combiner 230 is emitted from the above-mentioned emission end surface 233. In this embodiment, the cross-sections of the above-mentioned two triangular prisms are in the shape of isosceles triangles, the cross-section of the polarized beam combiner 230 after glueing is rectangular, and the transmission end surface 231, the reflection end surface 232 and the exit end surface 233 are all of the above-mentioned triangular prisms. On the side surface, the transmissive end surface 231 is parallel to the exit end surface 233 and the two are disposed opposite to each other, and the reflective end surface 232 is perpendicular to the exit end surface 233 and is disposed in the same prism with the exit end surface 233.

This application utilizes the characteristics that the P-polarized light in the laser can be transmitted through the polarization beam combiner 230, and the S-polarized light in the laser can be reflected through the polarization beam combiner 230, and combined with the characteristics of a very high proportion of P light in the laser light emitted by the semiconductor laser The light emitted by the first light-emitting module 210 is guided to the above-mentioned transmission end surface 231, and most of the light beams can be transmitted through the polarization beam combiner 230; at the same time, the light beams emitted by the second light-emitting module 220 are guided through the reflector 270 to By reflecting the end surface 232, the S light in the laser can be reflected at the junction of the two triangular prisms, and then emitted through the exit end surface 233.

Further, a half-wave plate 234 is provided at the reflective end face 232, which is used to modulate the P-polarized light in the laser light emitted by the second light-emitting module 220 into S-polarized light, so that the second light-emitting module 220 emits and enters the polarization combination. Most of the light beams in the laser beam of the beamer 230 exit the polarization beam combiner 230 from the exit end surface 233 in a reflected form.

Furthermore, in order to simplify the optical path, the incident angle (and reflection angle) of the laser light emitted by the first semiconductor laser chip 211 and the first mirror 214 in this embodiment is 45 degrees, and the laser light reflected by the first mirror 214 is perpendicular The polarization beam combiner 230 is incident on the transmission end surface 231; in the same way, the incident angle (and reflection angle) of the laser light emitted by the second semiconductor laser chip 221, the second mirror 224 and the reflector 270 are both 45 degrees, that is, the second reflection The mirror 224 and the reflector 270 are arranged in parallel, and the laser light reflected by the reflector 270 enters the polarization beam combiner 230 perpendicular to the reflection end surface 232. Combining the above-mentioned positional relationship between the transmissive end surface 231, the reflective end surface 232, and the exit end surface 233, it can be seen that the light beams emitted by the first light emitting module 210 and the second light emitting module 220 through the polarization beam combiner 230 propagate in the same direction.

For the above-mentioned focusing lens 240 and the optical fiber 250, please continue to refer to FIG. 3. The focusing lens 240 and the optical fiber 250 are installed in the housing 260, and are sequentially arranged on the side of the emission end surface 233 away from the transmission end surface 231. The focusing lens 240 is used to focus the light beam output from the polarization beam combiner 230 and guide it to the incident port of the optical fiber 250, and the end of the optical fiber 250 away from the focusing lens 240 can output the coupled laser light.

Furthermore, since the first reflector 214 and the second reflector 224 are often made by coating a reflective film on a glass material, and the energy of the laser is very high, part of the laser light may pass through the corresponding reflector and reach the opposite light-emitting module. ; In order to prevent the laser light emitted by the first light emitting module 210 located opposite from being transmitted through the first reflector 214, and then pass through the second reflector 224 and the second slow axis collimation of the second light emitting module 220 that are located opposite to and corresponding to it in turn The straight lens 223 and the second fast axis collimating lens 222 reach the second semiconductor laser chip 221, thereby causing damage to the second semiconductor laser chip 221. In the embodiment of the present application, each first light-emitting module 210 and each second light-emitting module 220 The directions along the first mirror 214 pointing to the polarization beam combiner 230 are staggered.

Specifically, please refer to FIG. 6, which shows a schematic diagram of each first light-emitting module 210 and each second light-emitting module 220 being staggered. For ease of understanding, the figure only shows one first light-emitting module 210. Please also 1 to 5, along the direction of the first reflector 214 pointing to the transmission end face 231 of the polarization beam combiner 230, between the first supporting step 261 and the second supporting step corresponding to each other (that is, the same height relative to the bottom of the housing) Staggered, so that the corresponding first light-emitting module 210 and each second light-emitting module 220 carried thereon are also staggered. Taking the laser light emitted by the first light-emitting module 210 as an example, the energy of the laser beam is mainly concentrated in the central part, and the ratio of the energy on both sides is very low. The distribution of the laser light penetrating the first mirror 214 is also the same as that described above. Schematic of the light beam; since the first light-emitting module 210 and the second light-emitting module 220 are staggered in the above direction (the first mirror 214 points to the direction of the transmission end surface), the central light beam will propagate to the two after passing through the first mirror 214 In the gap between the second light-emitting module 220, the light beam on the left side will be blocked by the first and second supporting steps on the left side of the first light-emitting module 210 and cannot reach the second semiconductor laser chip 221 on the opposite side. The proportion of the light beam on the side is extremely small. Even if it can reach the second mirror 224, it will be blocked by the second mirror 224. Take a step back, even if the light beam on the right side can pass through the second mirror 224 and the second slow axis. The collimating lens 223 and the second fast axis collimating lens 222 have extremely low energy reaching the second semiconductor laser chip 221, and will not cause damage to the second semiconductor laser chip 221. In addition, the distance between the first light-emitting module and the second light-emitting module can be adjusted appropriately on the basis of the figure, so that the left and right edge beams of the laser cannot be incident on the corresponding mirror, slow-axis collimating lens and fast light-emitting module of the opposite light-emitting module. Axis collimating lens. Similarly, the situation in which the laser light emitted by the second light-emitting module 220 passes through the second reflector 224 is basically the same as that of the first light-emitting module 210, which will not be repeated here. In summary, the staggered arrangement of each first light-emitting module 210 and each second light-emitting module 220 can avoid damage to the first semiconductor laser chip 211 and the second semiconductor laser chip 221, and prolong the overall service life of the semiconductor laser 200.

The working principle of the semiconductor laser provided in this application will be briefly described below in conjunction with the drawings:

When the laser needs to be used, the corresponding switch (not shown in the figure) is triggered, and the laser light emitted by each first semiconductor laser chip 211 passes through the corresponding first fast-axis collimating lens 212, first slow-axis collimating lens 213, and The first mirror 214 then sequentially transmits through the transmission end face 231 and the exit end face 233 of the polarization beam combiner, and then transmits through the focusing lens 240, and finally reaches the entrance port of the optical fiber 250 and outputs from the exit port of the optical fiber 250; each second semiconductor The laser light emitted by the laser chip 221 sequentially passes through the corresponding second fast axis collimating lens 222, the second slow axis collimating lens 223 and the second mirror 224, and then is reflected through the reflector 270, and then modulated into S by the half-wave plate 234 The polarized light then enters the polarization beam combiner 230 from the reflective end face 232 and is reflected at the junction of the two prisms and exits through the exit end face 233, then passes through the focusing lens 240, and finally reaches the entrance port of the fiber 250 and exits the exit port of the fiber 250 Output.

The semiconductor laser includes a first light emitting module 210, a second light emitting module 220, a polarization beam combiner 230, a focusing lens 240, and an optical fiber 250. Wherein, the polarization beam combiner 230 is provided with a transmission end face 231, a reflection end face 232, and an emission end face 233; the laser light emitted by the first light emitting module 210 can be transmitted through the polarization beam combiner 230 from the transmission end face 231 to the emission end face 233 as a whole; The laser light emitted by the two light-emitting modules 220 can be reflected in the polarization beam combiner 230 from the reflection end surface 232 to the emission end surface 233 through the polarization beam combiner 230.

Compared with the structure in which the light-emitting modules in the semiconductor lasers currently on the market are arranged in parallel in a row for beam combination, the semiconductor laser provided in the embodiment of the present application is equivalent to dividing the light-emitting module into two modules, namely: the first light-emitting module 210 and The second light-emitting module 220 is then combined by the polarization beam combiner 230. Wherein, the laser light emitted by the first light-emitting module 210 is transmitted through the polarization beam combiner 230 from the transmission end surface of the polarization beam combiner 230, and the laser light emitted by the second light-emitting module 220 enters the polarization beam combiner 230 from the reflection end surface 232 and enters the polarization beam combiner 230. The combined polarization beam reflects internally, and then exits from the exit end face 233. With the help of the above-mentioned arrangement design of the light-emitting modules, the number of the first light-emitting module 210 and the second light-emitting module 220 is less than the number of the light-emitting modules in the semiconductor lasers currently on the market, so the first light-emitting module 210 and the second light-emitting module 220 The laser light emitted to the polarization beam combiner 230 and the focusing lens 240 is more concentrated than a conventional semiconductor laser; and by simply adjusting the height position of the first light-emitting module 210 and the second light-emitting module 220 relative to the polarization beam combiner 230, Like the design of the first carrying step 261 and the second carrying step in the above embodiment, the laser beams emitted by the first light emitting module 210 and the second light emitting module 220 from the emission end surface 233 to the focusing lens 240 can be substantially coincident, thereby reducing the NA Value (the cone angle of the laser entering the fiber), which can make the laser output from the fiber have higher brightness and better beam quality.

It should be understood that in other embodiments of the present application, the reflector may not be present. Correspondingly, the laser light emitted by the second light-emitting module directly enters the polarization beam combiner through the half-wave plate; each semiconductor laser chip is incident on the corresponding reflector. The angle may also be other angles other than 45 degrees; the first light-emitting module may not be arranged on the first carrying step as a whole, but only the first semiconductor laser chip is arranged on the first carrying step. Correspondingly, the first fast axis The collimating lens, the first slow-axis collimating lens and the first reflecting mirror are all fixed on the bottom of the casing, or the first semiconductor laser chip and the first reflecting mirror are arranged on the above-mentioned first carrying step, correspondingly, the first fast The axis collimating lens and the first slow axis collimating lens are fixed at the bottom of the housing, as long as the light beams falling on the first mirrors are staggered along the height direction of the polarization beam combiner, the second light-emitting module and the first The light-emitting modules are the same and are not limited here.

Please refer to FIG. 7, which shows a top view of a semiconductor laser 300 provided by another embodiment of the present application. Please also refer to FIGS. 1 to 6. The semiconductor laser 300 includes a first light-emitting module 310, a second light-emitting module 320, and a polarizer. The beam combiner 330, the focusing lens 340, the optical fiber 350, the reflector 370, and the housing 360 for installing the above-mentioned components. The main difference between the semiconductor laser 300 and the semiconductor laser 200 in the previous embodiment is:

The overall structure of the first light-emitting module 210 and the second light-emitting module 220 in the first embodiment are arranged opposite to each other along the direction in which the first semiconductor laser chip points to the first reflector; while the first light-emitting module 310 and the second light-emitting module in this embodiment are opposite to each other. The overall structure of the module 320 partially overlaps along the direction in which the first semiconductor laser chip points to the first reflector.

Specifically, the first light-emitting module 310 includes a first semiconductor laser chip 311, a first fast-axis collimating lens 312, a first slow-axis collimating lens 313, and a first mirror 314 that are arranged in sequence; the second light-emitting module 320 includes sequentially The second semiconductor laser chip 321, the second fast axis collimating lens 322, the second slow axis collimating lens 323 and the second mirror 324 are arranged. Among them, the first semiconductor laser chip 311 and the second semiconductor laser chip 321 are disposed oppositely, and both are located on the side of the polarization beam combiner 330 where the half-wave plate is provided. Each first semiconductor laser chip 311 and the second semiconductor laser chip 321 is staggered along the direction in which the first reflector 314 points to the polarization beam combiner 330, and the corresponding first semiconductor laser chip 311 and the second semiconductor laser chip 321 are located at the same height relative to the polarization beam combiner 330. Each of the first slow-axis collimating lens 313 and the second slow-axis collimating lens 323, each of the first mirrors 314, and each of the second mirrors 324 are fixed on the bottom of the housing 260. Along the direction of the first semiconductor laser chip 311 (or the second semiconductor laser chip 321) pointing to the first slow axis collimating lens 313 (or the second slow axis collimating lens), the first semiconductor laser chip 311 is located on the second semiconductor laser chip Between 321 and the second slow-axis collimating lens 323, the second semiconductor laser chip 321 is located between the first semiconductor laser chip 311 and the first slow-axis collimating lens 313.

Compared with the conventional semiconductor laser 100, the semiconductor laser 300 provided in this embodiment is similar to the semiconductor laser 200 in the above-mentioned embodiment, and the NA value can be reduced through the arrangement of the rows. At the same time, each first light-emitting module 310 and each first light-emitting module 310 are connected to each other. The staggered arrangement of the two light-emitting modules 320 can prevent the laser light emitted by the opposite semiconductor laser chip from damaging the opposite semiconductor laser chip.

Compared with the semiconductor laser 200 provided in the first embodiment, the semiconductor laser 300 provided in this embodiment connects the first light-emitting module 310 and the second light-emitting module along the direction of the first semiconductor laser chip 311 to the first mirror 314. The arrangement of 320 is partially overlapped, so that the space occupied by the first light-emitting module 310 and the second light-emitting module 320 as a whole can be smaller, and the internal structure of the semiconductor laser 300 is arranged more compactly, thereby helping to reduce the size of the semiconductor laser 300. volume.

In addition, since the size of the spot profile of the final light beam output by the optical fiber 350 is proportional to the focal length of the focusing lens and inversely proportional to the focal length of the collimating lens, in order to minimize the profile of the spot, a collimating lens with a larger focal length is required. A larger focal length means a larger outer diameter of the collimating lens. Taking the first slow axis collimating lens as an example, along the direction of the first semiconductor laser chip 311 pointing to the first mirror 314, when the first slow axis collimating lens 313 is located between the first semiconductor laser chip 311 and the second semiconductor laser chip 321 In order to reduce the profile of the light spot, the size of the first slow-axis collimating lens 313 needs to be correspondingly increased, and further, in order to prevent the larger-sized first slow-axis collimating lens from interfering with the adjacent second light-emitting module In the optical path of the laser light emitted by the second semiconductor laser 321, the distance between the adjacent first light-emitting module 310 and the second light-emitting module 320 needs to be increased, so that the size of the semiconductor laser will increase accordingly. In this embodiment, the first slow axis collimating lens 313 is disposed on the side of the second semiconductor laser chip 321 away from the second slow axis collimating lens 323, and the second slow axis collimating lens 323 is disposed on the first semiconductor laser chip 321. The laser chip 311 is far away from the side of the first slow-axis collimating lens 313, which can avoid intervening adjacent light-emitting modules when replacing the first slow-axis collimating lens and/or the second slow-axis collimating lens with a lens with a large focal length. In the optical path, thereby further reducing the volume of the semiconductor laser. That is, the semiconductor laser provided in this embodiment can increase the aperture and focal length of the first slow axis collimating lens and/or the second slow axis collimating lens as much as possible under the same volume, thereby making the output spot size Smaller, higher beam quality.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, not to limit them; under the idea of this application, the above embodiments or the technical features in different embodiments can also be combined. The steps can be implemented in any order, and there are many other variations in different aspects of the application as described above. For the sake of brevity, they are not provided in the details; although the application has been described in detail with reference to the foregoing embodiments, it is common in the art The technical personnel should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or equivalently replace some of the technical features; and these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the implementations of this application Examples of the scope of technical solutions.

Claims

A semiconductor laser, characterized in that it comprises:

Polarization beam combiner with transmission end face, reflection end face and exit end face;

The first light-emitting module is configured to emit laser light, and the laser light emitted by the first light-emitting module transmits through the polarization beam combiner from the transmission end surface to the emission end surface;

The second light-emitting module is configured to emit laser light. The laser light emitted by the second light-emitting module enters the polarization beam combiner from the reflecting end surface, is reflected in the polarization beam combiner, and then is emitted from the emission end surface ；

A focusing lens for receiving and focusing the laser light emitted from the emitting end surface; and

The optical fiber is used to receive the laser light emitted from the focusing lens.
The semiconductor laser according to claim 1, wherein the first light-emitting module comprises a first semiconductor laser chip, a first fast-axis collimating lens, and a first slow-axis collimating lens arranged in sequence, and the first The laser light emitted by the semiconductor laser chip may sequentially pass through the first fast axis collimating lens and the first slow axis collimating lens.
The semiconductor laser according to claim 2, wherein the first light-emitting module further comprises a first reflector, and the first reflector and the first fast axis collimating lens are respectively provided on the first Both sides of the slow axis collimating lens;

The first reflecting mirror is used for receiving the laser light emitted from the first slow axis collimating lens, and reflecting the received laser light to the transmission end surface.
The semiconductor laser according to claim 3, wherein the second light emitting module comprises a second semiconductor laser chip, a second fast axis collimating lens, and a second slow axis collimating lens arranged in sequence, the second The laser light emitted by the semiconductor laser chip may sequentially pass through the second fast axis collimating lens and the second slow axis collimating lens.
The semiconductor laser according to claim 4, wherein the second light-emitting module further comprises a second reflector, and the second reflector and the second fast-axis collimating lens are respectively provided in the second Both sides of the slow axis collimating lens;

The second reflecting mirror is used for receiving the laser light emitted from the second slow axis collimating lens, and reflecting the received laser light to the reflecting end surface.
The semiconductor laser according to claim 4, further comprising a reflector;

The second light-emitting module further includes a second reflector, and the second reflector and the second fast-axis collimator lens are respectively disposed on both sides of the second slow-axis collimator lens, and the second reflector The mirror is used for receiving the laser light emitted from the second slow axis collimating lens and reflecting the received laser light to the reflector;

The reflector is used for receiving the laser light emitted from the second mirror and reflecting the received laser light to the reflecting end surface.
The semiconductor laser according to any one of claims 4 to 6, wherein the number of the first light-emitting module and the number of the second light-emitting module are both more than two, and the number of the two or more first light-emitting modules Each of the first semiconductor laser chips is staggered along the height direction of the polarization beam combiner, the second light-emitting module corresponds to the first light-emitting module one-to-one, and the first semiconductor laser chip corresponds to each other. The second semiconductor laser chip is located at the same height relative to the polarization beam combiner.
7. The semiconductor laser according to claim 7, wherein the first light-emitting module and the second light-emitting module are arranged opposite to each other, along a direction from the first reflector to the polarization beam combiner, and the second The light-emitting module and the first light-emitting module are staggered with each other.
The semiconductor laser according to any one of claims 4 to 6, wherein the first semiconductor laser chip and the second semiconductor laser chip are arranged opposite to each other;

Along the direction from the first reflecting mirror to the polarization beam combiner, the first semiconductor laser chip and the second semiconductor laser chip are staggered from each other;

Along the direction from the first semiconductor laser chip to the first slow axis collimating lens, the first semiconductor laser chip is located between the second semiconductor laser chip and the second slow axis collimating lens.
The semiconductor laser according to any one of claims 4 to 6, wherein the first semiconductor laser chip and the second semiconductor laser chip are arranged opposite to each other;

Along the direction from the first reflecting mirror to the polarization beam combiner, the first semiconductor laser chip and the second semiconductor laser chip are staggered from each other;

Along the direction from the first semiconductor laser chip to the first slow axis collimating lens, the second semiconductor laser chip is located between the first semiconductor laser chip and the first slow axis collimating lens.