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WO2019102738A1 - Light-emitting element manufacturing method - Google Patents

Light-emitting element manufacturing method Download PDF

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Publication number
WO2019102738A1
WO2019102738A1 PCT/JP2018/038071 JP2018038071W WO2019102738A1 WO 2019102738 A1 WO2019102738 A1 WO 2019102738A1 JP 2018038071 W JP2018038071 W JP 2018038071W WO 2019102738 A1 WO2019102738 A1 WO 2019102738A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
light emitting
adhesive
semiconductor layer
Prior art date
Application number
PCT/JP2018/038071
Other languages
French (fr)
Japanese (ja)
Inventor
石崎　順也
翔吾 古屋
智弘 秋山
Original Assignee
信越半導体株式会社
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Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2019102738A1 publication Critical patent/WO2019102738A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

Definitions

  • the present invention relates to a method of manufacturing a light emitting device, and more particularly to a method of scribing and breaking a light emitting device from a semiconductor substrate.
  • a product such as a chip on board (COB) is an LED chip mounting method which is excellent in heat dissipation from LED elements and is adopted in applications such as lighting.
  • COB chip on board
  • flip mounting in which a chip is directly bonded to a board is essential.
  • conductive pads having different polarities are provided on one side of the light emitting element.
  • the surface opposite to the surface provided with the current-carrying pad needs to be made of a material having a light extraction function.
  • an AlGaInP based material is used for the light emitting layer.
  • a bulk crystal does not exist in the AlGaInP based material, and the LED part is formed by an epitaxial method, so a material different from AlGaInP is selected as the starting substrate. Since the starting substrate is often selected from GaAs and Ge, and these substrates have the property of absorbing light to visible light, the starting substrate is removed when producing a flip chip.
  • the epitaxial layer forming the light emitting layer is an extremely thin film, it can not stand on its own after removal of the starting substrate. Therefore, it is necessary to replace the starting substrate with a material / structure having a function as a window layer which is transparent to the emission wavelength in the light emitting layer and has a thickness sufficient for self-supporting. is there.
  • Patent Document 1 discloses a technique of bonding a light emitting layer to a transparent substrate having a function of a window layer / supporting substrate with an adhesive such as BCB (benzocyclobutene) to form an LED.
  • a sapphire substrate or a quartz substrate is often selected as the transparent substrate in terms of flatness, hardness, and cost.
  • the transparent substrate is cut and diced to make a light emitting element.
  • dicing by scribing and breaking is general, not dicing by a blade.
  • the scribing method is generally performed by an ablation laser.
  • a laser wavelength used is an ultraviolet wavelength range shorter than 360 nm in order to ablate a substrate transparent to visible light.
  • BCB adhesives are transparent to visible light and have an absorption band to wavelengths in the ultraviolet region. That is, the absorption wavelength bands of the BCB adhesive and the visible transparent substrate are close to each other.
  • Patent document 1 JP-A-2004-158823
  • the present invention has been made in view of the above problems, and a visible transparent adhesive is a laser in a scribing / braking step of scribing a substrate obtained by joining a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region.
  • An object of the present invention is to provide a method of manufacturing a light emitting element in which absorption of energy, destruction and suppression of peeling from a junction are suppressed.
  • the present invention provides a method of manufacturing a light emitting device, (1) forming a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, thereby producing a wafer for a light emitting device; (2) preparing a support substrate; (3) bonding the supporting substrate to the wafer for light emitting devices through an adhesive layer to produce a bonded substrate; (4) removing the starting substrate from the bonded substrate to expose the first semiconductor layer; (5) removing at least the first semiconductor layer and the active layer in a partial region of the bonded substrate to form a removal portion; (6) forming a first ohmic electrode on the surface of the first semiconductor layer, and forming a second ohmic electrode on the surface of the removal portion, and (7) the bonding substrate using a scribing / breaking method using a laser beam.
  • the adhesive is not broken in the area to be scribed in the scribing / breaking step, thereby suppressing the adhesive from being broken and peeling from the bonding portion. it can.
  • the adhesive layer in the scribe area is preferably removed before scribing.
  • the support substrate has an adhesive layer, and the adhesive layer is removed and processed so that the adhesive layer does not exist in a scribe region. .
  • the adhesive can be relatively easily removed from the scribe area.
  • the width of the region where the adhesive is not present be 20 ⁇ m or more in the direction perpendicular to the scribing direction.
  • the method of manufacturing a light emitting device according to the present invention is visible in a scribing and breaking step of scribing a substrate obtained by bonding a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region. It is possible to suppress that the transparent adhesive absorbs laser energy, is destroyed, and exfoliated from the joint.
  • the visible transparent adhesive absorbs laser energy in the scribing / breaking process of scribing a substrate obtained by joining a light emitting layer and a transparent substrate (supporting substrate) with an adhesive having a light absorption band in the ultraviolet region. It has been desired to develop a method of manufacturing a light emitting device in which it is suppressed from being broken and separated from the bonding portion.
  • the present inventors conducted scribing and breaking in a method of manufacturing a light emitting device in which a scribing and breaking process is performed by laser light to separate the light emitting device from the semiconductor substrate in a die shape.
  • the inventors have found that peeling off from the bonding portion can be suppressed by removing the adhesive in the area to be scribed in the process beforehand so that the adhesive layer does not exist, and the present invention has been completed.
  • the present invention is a method of manufacturing a light emitting device, (1) forming a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, thereby producing a wafer for a light emitting device; (2) preparing a support substrate; (3) bonding the supporting substrate to the wafer for light emitting devices through an adhesive layer to produce a bonded substrate; (4) removing the starting substrate from the bonded substrate to expose the first semiconductor layer; (5) removing at least the first semiconductor layer and the active layer in a partial region of the bonded substrate to form a removal portion; (6) forming a first ohmic electrode on the surface of the first semiconductor layer, and forming a second ohmic electrode on the surface of the removal portion, and (7) the bonding substrate using a scribing / breaking method using a laser beam.
  • Step (1) forms a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, to produce a wafer for a light emitting device It is a process.
  • the wafer for light emitting element manufactured in the step (1) includes a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked, and in addition to the light emitting layer portion, for example, a light emitting layer portion An etch stop layer can be formed between the and the starting substrate.
  • an intermediate composition layer, a GaP current diffusion layer, a first dielectric film and the like can be further formed on the light emitting layer portion.
  • the light emitting device wafer may have a first adhesive layer for bonding a supporting substrate to be described later and the light emitting device wafer on top of these layers.
  • a light emitting device wafer can be produced by sequentially laminating these layers on the starting substrate.
  • the starting substrate is not particularly limited, but may be a GaAs or Ge substrate, and the first semiconductor layer, the active layer, and the second semiconductor layer may be AlGaInP based.
  • Step (2) is a step of preparing a support substrate.
  • the support substrate prepared in the step (2) comprises at least a visible transparent substrate.
  • a sapphire substrate, a quartz substrate, etc. can be used as a visible transparent substrate.
  • a dielectric film can be formed on the visible transparent substrate, and a second adhesive layer can be formed on the dielectric film for bonding the above-described wafer for light emitting device and the support substrate.
  • the second adhesive layer is processed into a desired pattern by photolithography or the like to remove the adhesive layer in the scribe region. be able to.
  • the step (3) is a step of bonding the supporting substrate to the wafer for light emitting element through an adhesive layer to produce a bonded substrate.
  • the adhesive that can be used here is not particularly limited, and BCB, epoxy resin, polyvinyl chloride resin, urethane resin, acrylic resin, silicone and the like can be mentioned.
  • the step (4) is a step of removing the starting substrate in the bonded substrate to expose the first semiconductor layer.
  • the starting substrate of the bonded substrate is removed by etching or the like. Furthermore, with the etch stop layer, the etch stop layer can also be removed. By removing these layers, the first semiconductor layer is exposed.
  • the step (5) is a step of removing at least the first semiconductor layer and the active layer in a partial region of the bonding substrate to form a removing portion.
  • the step (5) at least the first semiconductor layer and the active layer are cut and removed to form a removal portion. Further, not only the first semiconductor layer and the active layer but only the visible transparent substrate may be left, and all the layers may be cut and removed to form a removal portion.
  • the step (6) is a step of forming a first ohmic electrode on the surface of the first semiconductor layer and forming a second ohmic electrode on the surface of the removal portion.
  • the electrode can be formed by the following method. First, a dielectric layer is formed on the surface of the bonded substrate on which the removal portion is formed in the step (5). Next, an opening (a portion where the first semiconductor layer and the removed portion are exposed) is formed in the dielectric layer by photolithography and wet etching. Then, in the opening portion, the first ohmic electrode is formed on the surface of the first semiconductor layer, and the second ohmic electrode is formed on the surface of the removal portion.
  • the step (7) is a step of separating the light emitting element from the bonded substrate in a die shape using a scribing / breaking method with a laser beam.
  • step (7) first, in the scribe area, only the visible transparent substrate is left, and all layers are removed. If the adhesive layer in the scribe area is not removed in step (2), the adhesive layer can be removed at the same time.
  • Breaking is performed to separate the light emitting elements into dies.
  • the adhesive is not destroyed in the scribing / breaking step, thereby suppressing the adhesive from being broken and peeling from the bonding portion.
  • the adhesive layer in the scribing region may be removed any time before scribing, but immediately before scribing in the step (7) or when preparing the support substrate in the step (2). Can be done relatively easily.
  • the width of the area where the adhesive does not exist to be 20 ⁇ m or more in the direction perpendicular to the scribing direction, the adhesive layer does not have to be irradiated with the laser light reliably, so the dramatic improvement in peeling is achieved. can get.
  • the width of the region where the adhesive does not exist is preferably 100 ⁇ m or less in the direction perpendicular to the scribing direction, and 50 ⁇ m or less It is more preferable that the thickness be 30 ⁇ m or less.
  • the wafer 1 for light emitting elements is formed on a GaAs substrate (starting substrate) 2 inclined by 15 degrees in, for example, the [001] direction by metal organic chemical vapor deposition (MOVPE) method (Al x Ga 1-x ) y In 1-y P (0 ⁇ x1,1, 0.4 ⁇ y ⁇ 0.6), an etch stop layer 3 with a thickness of 0.1 to 1.0 ⁇ m, a thickness of 0.5 to Thickness 0 of the first conductive type first semiconductor layer 4 of 1.0 ⁇ m and (Al x Ga 1 -x ) y In 1-y P (0 ⁇ x ⁇ 1, 0.4 ⁇ y ⁇ 0.6) .1 ⁇ 1.0 .mu.m active layer 5, (Al x Ga 1-x ) y in 1-y P (0 ⁇ x ⁇ 1,0.4 ⁇ y ⁇ 0.6) having a thickness
  • the manufacturing method of the wafer 1 for light emitting elements is not limited to MOVPE, and may be manufactured by a molecular beam epitaxy (MBE) method or a actinic ray epitaxy (CBE) method.
  • MBE molecular beam epitaxy
  • CBE actinic ray epitaxy
  • a buffer layer may be provided between the GaAs substrate and the first semiconductor layer.
  • a first dielectric film 9 made of SiO 2 or SiN x is further formed on the GaP current diffusion layer 8 to a thickness of, for example, 0.4 ⁇ m.
  • the first bonding layer 11 can be provided by forming the first bonding layer 10 on which the BCB adhesive is applied by spin coating.
  • the thickness of the first adhesive layer varies depending on the viscosity of the BCB adhesive and the rotation speed at the time of spin coating.
  • the first adhesive layer 10 of about 0.5 ⁇ m can be formed at a rotation speed of 5000 rpm.
  • the wafer for a light emitting element used in the present invention has a structure without the first bonding layer 11, a structure without the first dielectric film 9, or a first bonding
  • the structure without the layer 10 may be used.
  • Step (2) In the supporting substrate 30, as shown in FIG. 4, a dielectric film 14 made of, for example, SiO 2 or SiN x is formed on a visible transparent substrate 13 such as sapphire or quartz, and an adhesive made of, for example, BCB resin is further formed thereon.
  • the second bonding layer 12 By applying the agent to form the second adhesive layer 15, the second bonding layer 12 can be provided.
  • the thickness of the second adhesive layer 15 varies depending on the viscosity of the BCB adhesive and the spin speed during spin coating, but in the present embodiment, the second adhesive layer 15 of about 0.5 ⁇ m can be formed at a rotational speed of 5000 rpm.
  • the second adhesive layer 15 may not be provided, and when the second adhesive layer 15 is formed, the first adhesive layer 10 may not be provided, and both may be formed. You may In addition to the BCB resin as an adhesive, the first adhesive layer 10 and the second adhesive layer 15 may be formed of another transparent and liquid member such as epoxy, such as epoxy.
  • Step (3) Next, as shown in FIG. 5, the first adhesive layer 10 and the second adhesive layer 15 are opposed to each other, and pressure and heat are applied under vacuum or reduced pressure atmosphere to form the first adhesive layer 10 and the second adhesive layer 15.
  • the bonded substrate 16 is formed.
  • the pressure can be adhered by pressure bonding under the conditions of 6 N / cm 2 or more and the temperature of 100 ° C. or more. In particular, bonding is preferably performed under conditions of reaching 30 N / cm 2 and 300 ° C.
  • the GaAs substrate 2 is removed from the bonding substrate 16 by chemical etching.
  • the chemical etching solution is preferably one having etching selectivity with the AlGaInP based material, and is generally removed by using an ammonia containing etchant.
  • the etch stop layer 3 is removed to form a bonded substrate 17 having a first semiconductor layer exposed surface (first surface) 18.
  • the etch stop layer 3 is removed by a mixed solution of hydrogen peroxide and an acid for etching the AlGaInP based material.
  • Step (5) Next, as shown in FIG. 7, a part of the first semiconductor layer exposed surface 18 is cut away from the bonding substrate 17 to form a removal portion (second surface) 19. In this aspect, the first semiconductor layer 4 and the active layer 5 are removed to expose the second semiconductor layer 6.
  • a dielectric layer 21 is formed and an opening 22 is provided so as to cover the notched side surface 20 as shown in FIG.
  • the dielectric layer 21 is preferably SiO 2 or SiN x . Any of sol-gel method, sputtering method and CVD method can be selected for film formation of the dielectric layer.
  • the openings 22 can be provided by forming the dielectric layer 21, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
  • the first ohmic electrode 23 is formed on a part of the first semiconductor layer exposed surface 18, and the second ohmic electrode 24 is formed on a part of the removal portion 19.
  • a covering 25 and an opening 26 are formed to cover the entire first semiconductor layer exposed surface 18 and a part of the removing portion 19 by photolithography using a photoresist.
  • the opening 26 is removed by dry etching to expose a portion 27 of the visible transparent substrate 13.
  • the dry etching here removes the adhesive layer in the scribe area.
  • the removal of the AlGaInP layer is performed in a mixed atmosphere of Cl-containing gas and Ar in the ICP apparatus, and the removal of the SiO 2 or SiN x dielectric layer and the BCB layer is performed in a mixed atmosphere of F-containing gas and Ar Can.
  • the pressure atmosphere can be 0.5 Pa, and the output can be plasma 300 W.
  • the removal of the layer using the Cl-containing gas and the removal of the layer using the F-containing gas can be performed in separate chambers, or in the same chamber only by switching the gas without removing the wafer from the vacuum atmosphere. It can also be implemented.
  • the covering portion 25 with the photoresist is removed.
  • the exposed portion 27 is irradiated with a laser to form a scribe portion 28.
  • the breaking process is performed along the scribing unit 28 and diced.
  • the adhesive layer since the adhesive layer does not exist in the laser irradiation area, the adhesive absorbs the laser energy and is broken, and it is relatively easy to suppress the peeling from the bonding portion. Can be manufactured.
  • the wafer 1 for light emitting element is formed on a GaAs substrate (starting substrate) 2 inclined by 15 degrees in the [001] direction by metal organic chemical vapor deposition (MOVPE) method (Al x Ga 1- x ) y In 1-y P (0 ⁇ x ⁇ 1, 0.4 ⁇ y ⁇ 0.6), an etch stop layer 3 with a thickness of 0.1 to 1.0 ⁇ m, and a thickness of 0.5 to 1.
  • MOVPE metal organic chemical vapor deposition
  • the second semiconductor layer 6 the second conductivity type made of 0 ⁇ m, Ga y in 1-y P Ga with (0.0 ⁇ y ⁇ 1.0) of the intermediate composition layers 7,0.5 ⁇ 20 ⁇ m having a thickness of It can be formed by sequentially stacking a current diffusion layer 8.
  • the manufacturing method of the wafer 1 for light emitting elements is not limited to MOVPE, and may be manufactured by a molecular beam epitaxy (MBE) method or a actinic ray epitaxy (CBE) method.
  • MBE molecular beam epitaxy
  • CBE actinic ray epitaxy
  • a buffer layer may be provided between the GaAs substrate and the first semiconductor layer.
  • a wafer 1 for light emitting element is formed by forming a first dielectric film 9 made of, for example, SiO 2 or SiN x with a thickness of about 0.4 ⁇ m on the GaP current diffusion layer 8. It can have one bonding layer 11. Although the first bonding layer 11 is provided in the present embodiment, the first bonding layer 11 may not be provided.
  • the supporting substrate 30 is an adhesive layer 15 on which a dielectric film 14 made of SiO 2 or SiN x is formed on a visible transparent substrate 13 such as sapphire or quartz, and a BCB adhesive is further applied thereon.
  • the second bonding layer 12 can be provided by forming '.
  • the thickness of the adhesive layer 15 ' varies depending on the viscosity of the BCB adhesive and the rotation speed at the time of spin coating. For example, the adhesive layer 15' of 0.5 ⁇ m can be formed at a rotational speed of 5000 rpm.
  • the adhesive layer 15 ′ is processed into the shape of the desired pattern 29.
  • the adhesive layer in the scribe area is removed.
  • a photosensitive material is selected among the BCB materials as the adhesive layer 15 ′
  • a desired pattern 29 can be obtained by a photolithography method.
  • a non-photosensitive material is selected from the BCB materials as the adhesive layer 15 '
  • a resist is coated by a photoresist method so that a desired pattern is obtained, and a desired pattern 29 is formed by an ICP apparatus containing F-containing gas. You can get
  • the shape and size of the pattern 29 are limited by the size of the light emitting element to be obtained and the thickness of the adhesive layer 15 '.
  • the shape and size of the pattern 29 are equal to or less than the difference between the size of the light emitting element to be obtained and the opening 26.
  • Step (3) Next, as shown in FIG. 17, the first bonding layer 11 and the second bonding layer 12 are opposed to each other, and pressure and heat are applied under a vacuum or reduced pressure atmosphere to form the first bonding layer 11 and the second bonding layer 12.
  • the bonded substrate 16 is formed. It can adhere
  • the GaAs substrate 2 is removed from the bonding substrate 16 by chemical etching.
  • the chemical etching solution is preferably one having etching selectivity with the AlGaInP based material, and is generally removed by using an ammonia containing etchant.
  • the etch stop layer 3 is removed to form a junction substrate 17 having the first semiconductor layer exposed surface 18.
  • the etch stop layer 3 is removed by a mixed solution of hydrogen peroxide and an acid for etching the AlGaInP based material.
  • Step (5) Next, as shown in FIG. 19, the first semiconductor layer exposed surface 18 is left from the bonding substrate 17 in a range not exceeding the pattern 29, and a part of the first semiconductor layer exposed surface 18 is notched.
  • dielectric layer 21 is formed and opening 22 is provided so as to cover notched side surface 20 as shown in FIG.
  • the dielectric layer 21 is preferably SiO 2 or SiN x . Any of sol-gel method, sputtering method and CVD method can be selected for film formation of the dielectric layer.
  • the openings 22 can be provided by forming the dielectric layer 21, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
  • the first ohmic electrode 23 is formed on a part of the first semiconductor layer exposed surface 18, and the second ohmic electrode 24 is formed on a part of the removal portion 19.
  • a cover 25 and an opening 26 are formed to cover the entire first semiconductor layer exposed surface 18 and a part of the removal portion 19 by photolithography using a photoresist.
  • the opening 26 is removed by dry etching to expose a portion 27 of the visible transparent substrate 13.
  • the removal of the AlGaInP layer is performed in a mixed atmosphere of Cl-containing gas and Ar in the ICP apparatus, and the removal of the SiO 2 or SiN x dielectric layer and the BCB layer is performed in a mixed atmosphere of F-containing gas and Ar Can.
  • the pressure atmosphere can be 0.5 Pa, and the output can be plasma 300 W.
  • the removal of the layer using the Cl 2 -containing gas and the removal of the layer using the F-containing gas can be performed in separate chambers, or in the same chamber only by switching the gas without removing the wafer from the vacuum atmosphere. Can also be implemented.
  • the coated portion 25 with the photoresist is removed.
  • the exposed portion 27 is irradiated with a laser to form a scribe portion 28.
  • the breaking process is performed along the scribing unit 28 and diced.
  • the adhesive layer does not exist in the laser irradiation area, the adhesive absorbs the laser energy, is destroyed, and the light emitting element which suppresses peeling from the joint is relatively made. It can be easily manufactured.
  • Example 1 A light emitting device was manufactured based on the first embodiment of the method for manufacturing a light emitting device of the present invention as shown in FIGS.
  • a substrate (starting substrate) made of GaAs (001) was prepared as a starting substrate, and a double hetero layer (light emitting layer) as a functional layer was formed on this substrate by the MOVPE method.
  • the light emitting layer was formed by sequentially laminating a lower cladding layer (first semiconductor layer), an active layer, and an upper cladding layer (second semiconductor layer).
  • the composition of (Al x Ga 1 -x ) y In 1-y P (0.6 ⁇ x ⁇ 1.0, 0.4 ⁇ y ⁇ 0.6) is selected
  • the n-type AlInP cladding layer is 0.7 ⁇ m (doping concentration 3.0 ⁇ 10 17 / cm 3 )
  • the n-type Al 0.85 GaInP layer is 0.3 ⁇ m (doping) It was set as the two-layer structure of density
  • the active layer is selected from (Al x Ga 1 -x ) y In 1-y P (0.15 ⁇ x ⁇ 0.8, 0.4 ⁇ y ⁇ 0.6), and the compositions x and y are dependent on the wavelength. changed.
  • multiple active layers were used as the active layer.
  • the film thicknesses of the active layer and the barrier layer were changed according to the wavelength to be obtained, and were adjusted to the wavelength in the range of 4 to 12 nm, respectively.
  • the p-type AlInP cladding layer is 0.9 ⁇ m (doping concentration 3.0 ⁇ 10 17 / cm 3 ), and the p-type Al 0.6 GaInP layer is 0.1 ⁇ m (doping concentration 1.0 ⁇ 10 17) It was set as the 2 layer structure of / cm ⁇ 3 >.
  • a buffer layer of GaInP was formed on the light emitting layer.
  • a dielectric film of SiO 2 was formed to a thickness of 0.4 ⁇ m on the buffer layer, and a BCB adhesive was applied thereon by spin coating to form a first adhesive layer.
  • the support substrate was prepared. First, a dielectric film composed of SiO 2 was formed on sapphire, and a second adhesive layer coated with an adhesive composed of BCB resin was formed thereon.
  • the first adhesive layer and the second adhesive layer were adhered. Thereafter, the GaAs substrate was removed by an ammonia-containing etchant. Subsequently, the etch stop layer was removed to expose the first semiconductor layer. Next, a part of the first semiconductor layer and the active layer was cut out to expose a part of the second semiconductor.
  • a dielectric layer was formed and an opening was provided so as to cover the notched side surface.
  • the dielectric layer was SiO 2 and was deposited by P-CVD using TEOS and O 2 .
  • the opening was formed by forming a dielectric layer, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
  • a first ohmic electrode and a second ohmic electrode were formed. Thereafter, part of the visible transparent substrate was exposed by photolithography and dry etching. At this time, the width of the exposed portion (direction perpendicular to the scribing direction) was 5, 10, 15, 20, 25, 30 ⁇ m.
  • the removal of the AlGaInP layer was performed in a mixed atmosphere of Cl-containing gas and Ar in an ICP apparatus, and the removal of the SiO 2 dielectric layer and the BCB layer was performed in a mixed atmosphere of F-containing gas and Ar.
  • the pressure atmosphere was 0.5 Pa, and the output was 300 W plasma.
  • FIG. 28 shows the relationship between the area of the bonded portion peeled off by the adhesive and the width of the exposed portion (street portion width). It can be seen that the peeling area is reduced regardless of the width of any exposed portion, as compared to the comparative example (width 0 ⁇ m) described later. Especially when the width was 20 ⁇ m or more, the peeling was dramatically improved.
  • Example 2 A light emitting device was manufactured based on the second embodiment of the method for manufacturing a light emitting device of the present invention as shown in FIGS. 13 to 24.
  • a light emitting device was manufactured in the same manner as Example 1, except that the adhesive was processed into a desired pattern shape and then the transparent substrate was attached.
  • FIG. 28 shows the results of the peeling state. Also in Example 2, the same result as in Example 1 was obtained.
  • the light emitting device was manufactured using the conventional method as shown in FIGS. 25 to 27.
  • a light emitting device was manufactured in the same manner as Example 1, except that scribing was performed in the region where the adhesive was present.
  • FIG. 28 shows the results of the peeling state. It can be seen that the peeling area is larger than in Examples 1 and 2.
  • the method of manufacturing a light emitting device according to the present invention is visible in a scribing and breaking step of scribing a substrate obtained by bonding a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region. It has been found that the transparent adhesive can suppress laser energy absorption, destruction and peeling from the joint.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has the substantially same constitution as the technical idea described in the claims of the present invention, and the same effects can be exhibited by any invention. It is included in the technical scope of

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Abstract

The present invention provides a light-emitting element manufacturing method comprising: (1) a step of fabricating a light-emitting element wafer by forming on a starting substrate a layered structure including a light-emitting layer portion; (2) a step of preparing a support substrate; (3) a step of causing the support substrate to adhere to the light-emitting element wafer with an adhesive layer therebetween; (4) a step of removing the starting substrate and exposing the first semiconductor layer; (5) a step of forming a removed portion; (6) a step of forming a first ohmic electrode and a second ohmic electrode; and (7) a step of, by a scribe/breaking method using laser light, separating a light-emitting element from the bonded substrate in a dice shape, characterized in that, before scribing, the adhesive layer in a scribe region is removed in advance. Thus, provided is a light-emitting element manufacturing method by which, in the scribe/breaking step, destruction and peeling of a visible transparent adhesive agent from a bonded portion due to absorption of laser energy is suppressed.

Description

発光素子の製造方法Method of manufacturing light emitting device
　本発明は、発光素子の製造方法に関し、特に半導体基板から発光素子をスクライブ・ブレーキングする方法に関する。 The present invention relates to a method of manufacturing a light emitting device, and more particularly to a method of scribing and breaking a light emitting device from a semiconductor substrate.
　チップオンボード（ＣＯＢ）等の製品は、ＬＥＤ素子からの放熱性に優れ、照明等の用途において採用されるＬＥＤチップ実装方法である。ＣＯＢ等にＬＥＤを実装する場合、チップを直接ボードに接合するフリップ実装が必須である。フリップ実装を実現するためには、発光素子の一方の面に極性の異なる通電用パッドを設けたフリップチップを作製する必要がある。また、通電用パッドが設けられた面の反対側の面は光取り出し機能を有する材料で構成する必要がある。 A product such as a chip on board (COB) is an LED chip mounting method which is excellent in heat dissipation from LED elements and is adopted in applications such as lighting. In the case of mounting an LED on a COB or the like, flip mounting in which a chip is directly bonded to a board is essential. In order to realize flip mounting, it is necessary to manufacture a flip chip in which conductive pads having different polarities are provided on one side of the light emitting element. Further, the surface opposite to the surface provided with the current-carrying pad needs to be made of a material having a light extraction function.
　黄色～赤色ＬＥＤでフリップチップを作製する場合、発光層にはＡｌＧａＩｎＰ系の材料が用いられる。ＡｌＧａＩｎＰ系材料はバルク結晶が存在せず、ＬＥＤ部はエピタキシャル法で形成されるため、出発基板にはＡｌＧａＩｎＰとは異なる材料が選択される。出発基板はＧａＡｓやＧｅが選択される場合が多く、これらの基板は可視光に対して光吸収の特性を有するため、フリップチップを作製する場合、出発基板は除去される。しかし、発光層を形成するエピタキシャル層は極薄膜のため、出発基板除去後に自立することができない。したがって、発光層に発光波長に対して透明で窓層としての機能を有し、自立させるために十分の厚さを有する支持基板としての機能を有する材料・構成で、出発基板と置換する必要がある。 When producing a flip chip with yellow to red LEDs, an AlGaInP based material is used for the light emitting layer. A bulk crystal does not exist in the AlGaInP based material, and the LED part is formed by an epitaxial method, so a material different from AlGaInP is selected as the starting substrate. Since the starting substrate is often selected from GaAs and Ge, and these substrates have the property of absorbing light to visible light, the starting substrate is removed when producing a flip chip. However, since the epitaxial layer forming the light emitting layer is an extremely thin film, it can not stand on its own after removal of the starting substrate. Therefore, it is necessary to replace the starting substrate with a material / structure having a function as a window layer which is transparent to the emission wavelength in the light emitting layer and has a thickness sufficient for self-supporting. is there.
　特許文献１には、窓層兼支持基板の機能を有する透明基板にＢＣＢ（ベンゾシクロブテン）等の接着剤で発光層を接着し、ＬＥＤとする技術が開示されている。透明基板には平坦度や硬度、コストの点でサファイア基板や石英基板が選択されることが多い。発光層を接着後、透明基板を切断してダイス化し、発光素子とするが、切断に際して、カーフロスを極小化するため、ブレードによるダイス化ではなく、スクライブ・ブレーキングによるダイス化が一般的である。サファイア基板や石英基板の場合、スクライブ法はアブレーションレーザーによってなされる場合が一般的である。 Patent Document 1 discloses a technique of bonding a light emitting layer to a transparent substrate having a function of a window layer / supporting substrate with an adhesive such as BCB (benzocyclobutene) to form an LED. A sapphire substrate or a quartz substrate is often selected as the transparent substrate in terms of flatness, hardness, and cost. After bonding the light emitting layer, the transparent substrate is cut and diced to make a light emitting element. However, in order to minimize kerf loss at the time of cutting, dicing by scribing and breaking is general, not dicing by a blade. . In the case of a sapphire substrate or a quartz substrate, the scribing method is generally performed by an ablation laser.
　この際、使用されるレーザー波長は、可視光に対して透明な基板をアブレーションさせるため、３６０ｎｍより波長の短い紫外波長領域である。ＢＣＢ接着剤は可視光に対しては透明であり、紫外領域の波長に対しては吸収帯を有する。つまり、ＢＣＢ接着剤と可視透明基板の吸収波長帯は近接している。紫外域において光吸収帯を有する接着剤で発光層と可視透明基板を接合した基板をレーザーでスクライブする場合、透明基板だけでなく、ＢＣＢ接着剤のような可視透明接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離するという問題があった。 At this time, a laser wavelength used is an ultraviolet wavelength range shorter than 360 nm in order to ablate a substrate transparent to visible light. BCB adhesives are transparent to visible light and have an absorption band to wavelengths in the ultraviolet region. That is, the absorption wavelength bands of the BCB adhesive and the visible transparent substrate are close to each other. When scribing a substrate obtained by bonding a light emitting layer and a visible transparent substrate with an adhesive having a light absorption band in the ultraviolet region with a laser, not only the transparent substrate but also a visible transparent adhesive such as a BCB adhesive absorbs laser energy , There was a problem that it was destroyed and exfoliated from the joint.
特開２００４－１５８８２３Patent document 1: JP-A-2004-158823
　本発明は上記課題に鑑みなされたもので、紫外域において光吸収帯を有する接着剤で発光層と透明基板を接合した基板をレーザーでスクライブするスクライブ・ブレーキング工程において、可視透明接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制した発光素子の製造方法を提供することを目的とする。 The present invention has been made in view of the above problems, and a visible transparent adhesive is a laser in a scribing / braking step of scribing a substrate obtained by joining a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region. An object of the present invention is to provide a method of manufacturing a light emitting element in which absorption of energy, destruction and suppression of peeling from a junction are suppressed.
　上記課題を達成するために、本発明では、発光素子の製造方法であって、
（１）出発基板上に、エピタキシャル成長により、第一半導体層、活性層、及び第二半導体層が順次積層された発光層部を含む積層構造を形成し、発光素子用ウェーハを作製する工程、
（２）支持基板を準備する工程、
（３）前記支持基板を、接着層を介して前記発光素子用ウェーハに接着し、接合基板を作製する工程、
（４）前記接合基板において、前記出発基板を除去して、前記第一半導体層を露出させる工程、
（５）前記接合基板の一部の領域において、少なくとも前記第一半導体層及び活性層を除去し、除去部を形成する工程、
（６）前記第一半導体層の表面に第一オーミック電極を、前記除去部の表面に第二オーミック電極を形成する工程、及び
（７）レーザー光によるスクライブ・ブレーキング法を用いて前記接合基板から発光素子をダイス状に分離する工程、
を含み、かつ、スクライブを行う前に、予めスクライブ領域にある前記接着層を除去しておく発光素子の製造方法を提供する。 In order to achieve the above object, the present invention provides a method of manufacturing a light emitting device,
(1) forming a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, thereby producing a wafer for a light emitting device;
(2) preparing a support substrate;
(3) bonding the supporting substrate to the wafer for light emitting devices through an adhesive layer to produce a bonded substrate;
(4) removing the starting substrate from the bonded substrate to expose the first semiconductor layer;
(5) removing at least the first semiconductor layer and the active layer in a partial region of the bonded substrate to form a removal portion;
(6) forming a first ohmic electrode on the surface of the first semiconductor layer, and forming a second ohmic electrode on the surface of the removal portion, and (7) the bonding substrate using a scribing / breaking method using a laser beam. Separating the light emitting element from the
And a method of manufacturing a light emitting device in which the adhesive layer in the scribe region is removed in advance before scribing.
　このような発光素子の製造方法とすれば、スクライブ・ブレーキング工程においてスクライブする領域に接着層が存在しないようにすることで、接着剤が破壊され、接合部から剥離するのを抑制することができる。 According to the manufacturing method of such a light emitting element, the adhesive is not broken in the area to be scribed in the scribing / breaking step, thereby suppressing the adhesive from being broken and peeling from the bonding portion. it can.
　また、前記工程（７）において、スクライブを行う前に、前記スクライブ領域にある前記接着層を除去することが好ましい。 In the step (7), the adhesive layer in the scribe area is preferably removed before scribing.
　このような発光素子の製造方法とすれば、比較的容易にスクライブ領域に接着剤が存在しないようにすることができる。 According to the method of manufacturing such a light emitting element, it is possible to relatively easily make the adhesive not present in the scribe region.
　また、前記工程（２）において、前記支持基板を、接着層を有するものとし、かつ、前記接着層を、スクライブ領域には前記接着層が存在しないように除去加工されたものとすることが好ましい。 In the step (2), preferably, the support substrate has an adhesive layer, and the adhesive layer is removed and processed so that the adhesive layer does not exist in a scribe region. .
　このようにしても、比較的容易にスクライブ領域に接着剤が存在しないようにすることができる。 Even in this case, the adhesive can be relatively easily removed from the scribe area.
　また、前記接着剤が存在しない領域の幅を、スクライブ方向に対して垂直な方向で２０μｍ以上とすることが好ましい。 Further, it is preferable that the width of the region where the adhesive is not present be 20 μm or more in the direction perpendicular to the scribing direction.
　このような接着剤が存在しない領域の幅とすれば、劇的な剥離改善効果を得ることができる。 By setting the width of the region where such an adhesive is not present, a dramatic peel improvement effect can be obtained.
　以上のように、本発明の発光素子の製造方法であれば、紫外域において光吸収帯を有する接着剤で発光層と透明基板を接合した基板をレーザーでスクライブするスクライブ・ブレーキング工程において、可視透明接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制することができる。 As described above, the method of manufacturing a light emitting device according to the present invention is visible in a scribing and breaking step of scribing a substrate obtained by bonding a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region. It is possible to suppress that the transparent adhesive absorbs laser energy, is destroyed, and exfoliated from the joint.
本発明の発光素子の製造方法におけるスクライブの説明図である。It is explanatory drawing of the scribe in the manufacturing method of the light emitting element of this invention. 第一実施形態で作製した発光素子ウェーハの概略図である。It is the schematic of the light-emitting element wafer produced by 1st embodiment. 第一実施形態で作製した発光素子ウェーハに第一接合層を形成したときの概略図である。It is the schematic when a 1st bonding layer is formed in the light emitting element wafer produced by 1st embodiment. 第一実施形態で準備した支持基板の概略図である。It is the schematic of the support substrate prepared by 1st embodiment. 第一実施形態で形成した接合基板の概略図である。It is the schematic of the joining substrate formed in 1st embodiment. 第一実施形態の第一半導体層を露出させた接合基板の概略図である。It is the schematic of the joining substrate which exposed the 1st semiconductor layer of 1st embodiment. 第一実施形態の除去部を形成した接合基板の概略図である。It is the schematic of the joining substrate which formed the removal part of 1st embodiment. 第一実施形態の誘電体層に開口部を形成した接合基板の概略図である。It is the schematic of the joining substrate which formed the opening part in the dielectric material layer of 1st embodiment. 第一実施形態の第一オーミック電極と第二オーミック電極を形成した接合基板の概略図である。It is the schematic of the joining substrate in which the 1st ohmic electrode of 1st embodiment and the 2nd ohmic electrode were formed. 第一実施形態のレジストの被覆部と開口部を形成した接合基板の概略図である。It is the schematic of the joining board | substrate which formed the coating part and opening part of the resist of 1st embodiment. 第一実施形態の露出部を形成した接合基板の概略図である。It is the schematic of the joining substrate in which the exposed part of 1st embodiment was formed. 第一実施形態のスクライブした接合基板の概略図である。It is the schematic of the scribed joined board | substrate of 1st embodiment. 第二実施形態で作製した発光素子ウェーハの概略図である。It is the schematic of the light-emitting element wafer produced by 2nd embodiment. 第二実施形態で作製した発光素子ウェーハに第一接合層を形成したときの概略図である。It is the schematic when a 1st joining layer is formed in the light emitting element wafer produced by 2nd embodiment. 第二実施形態で準備した支持基板の概略図である。It is the schematic of the support substrate prepared by 2nd embodiment. 第二実施形態の接着層にパターンを形成した支持基板の概略図である。It is the schematic of the support substrate which formed the pattern in the contact bonding layer of 2nd embodiment. 第二実施形態で形成した接合基板の概略図である。It is the schematic of the joining substrate formed in 2nd embodiment. 第二実施形態の第一半導体層を露出させた接合基板の概略図である。It is the schematic of the joining substrate which exposed the 1st semiconductor layer of 2nd embodiment. 第二実施形態の除去部を形成した接合基板の概略図である。It is the schematic of the joining substrate which formed the removal part of 2nd embodiment. 第二実施形態の誘電体層に開口部を形成した接合基板の概略図である。It is the schematic of the joining substrate which formed the opening part in the dielectric material layer of 2nd embodiment. 第二実施形態の第一オーミック電極と第二オーミック電極を形成した接合基板の概略図である。It is the schematic of the joining substrate in which the 1st ohmic electrode of 2nd embodiment and the 2nd ohmic electrode were formed. 第二実施形態のレジストの被覆部と開口部を形成した接合基板の概略図である。It is the schematic of the joining board | substrate which formed the coating part and opening part of the resist of 2nd embodiment. 第二実施形態の露出部を形成した接合基板の概略図である。It is the schematic of the joining substrate which formed the exposed part of 2nd embodiment. 第二実施形態のスクライブした接合基板の概略図である。It is the schematic of the scribed joined board | substrate of 2nd embodiment. 比較例のレジストの被覆部と開口部を形成した接合基板の概略図である。It is the schematic of the joining board | substrate which formed the coating part and opening part of the resist of a comparative example. 比較例のスクライブ領域にある中間組成層を露出させた接合基板の概略図である。It is the schematic of the joining substrate which exposed the intermediate composition layer which exists in the scribe area | region of a comparative example. 比較例のスクライブした接合基板の概略図である。It is the schematic of the scribed joined board | substrate of a comparative example. 実施例及び比較例における露出部の幅と剥離部面積の関係を示す図である。It is a figure which shows the relationship between the width | variety of the exposed part in an Example and a comparative example, and a peeling part area.
　上述のように、紫外域において光吸収帯を有する接着剤で発光層と透明基板（支持基板）を接合した基板をレーザーでスクライブするスクライブ・ブレーキング工程において、可視透明接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制した発光素子の製造方法の開発が求められていた。 As described above, the visible transparent adhesive absorbs laser energy in the scribing / breaking process of scribing a substrate obtained by joining a light emitting layer and a transparent substrate (supporting substrate) with an adhesive having a light absorption band in the ultraviolet region. It has been desired to develop a method of manufacturing a light emitting device in which it is suppressed from being broken and separated from the bonding portion.
　本発明者らは、上記課題について鋭意検討を重ねた結果、半導体基板から発光素子をダイス状に分離するためにレーザー光によりスクライブ・ブレーキング工程を行う発光素子の製造方法において、スクライブ・ブレーキング工程においてスクライブする領域の接着剤を予め除去して接着層が存在しないようにすることで、接合部からの剥離を抑制できることを見出し、本発明を完成させた。 As a result of intensive investigations on the above problems, the present inventors conducted scribing and breaking in a method of manufacturing a light emitting device in which a scribing and breaking process is performed by laser light to separate the light emitting device from the semiconductor substrate in a die shape. The inventors have found that peeling off from the bonding portion can be suppressed by removing the adhesive in the area to be scribed in the process beforehand so that the adhesive layer does not exist, and the present invention has been completed.
　即ち、本発明は、発光素子の製造方法であって、
（１）出発基板上に、エピタキシャル成長により、第一半導体層、活性層、及び第二半導体層が順次積層された発光層部を含む積層構造を形成し、発光素子用ウェーハを作製する工程、
（２）支持基板を準備する工程、
（３）前記支持基板を、接着層を介して前記発光素子用ウェーハに接着し、接合基板を作製する工程、
（４）前記接合基板において、前記出発基板を除去して、前記第一半導体層を露出させる工程、
（５）前記接合基板の一部の領域において、少なくとも前記第一半導体層及び活性層を除去し、除去部を形成する工程、
（６）前記第一半導体層の表面に第一オーミック電極を、前記除去部の表面に第二オーミック電極を形成する工程、及び
（７）レーザー光によるスクライブ・ブレーキング法を用いて前記接合基板から発光素子をダイス状に分離する工程、
を含み、かつ、スクライブを行う前に、予めスクライブ領域にある前記接着層を除去しておく発光素子の製造方法である。 That is, the present invention is a method of manufacturing a light emitting device,
(1) forming a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, thereby producing a wafer for a light emitting device;
(2) preparing a support substrate;
(3) bonding the supporting substrate to the wafer for light emitting devices through an adhesive layer to produce a bonded substrate;
(4) removing the starting substrate from the bonded substrate to expose the first semiconductor layer;
(5) removing at least the first semiconductor layer and the active layer in a partial region of the bonded substrate to form a removal portion;
(6) forming a first ohmic electrode on the surface of the first semiconductor layer, and forming a second ohmic electrode on the surface of the removal portion, and (7) the bonding substrate using a scribing / breaking method using a laser beam. Separating the light emitting element from the
And before the scribing, the adhesive layer in the scribing region is removed in advance.
　以下、本発明について詳細に説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.
［工程（１）］
　工程（１）は、出発基板上に、エピタキシャル成長により、第一半導体層、活性層、及び第二半導体層が順次積層された発光層部を含む積層構造を形成し、発光素子用ウェーハを作製する工程である。 [Step (1)]
Step (1) forms a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, to produce a wafer for a light emitting device It is a process.
　工程（１）で作製する発光素子用ウェーハは、第一半導体層、活性層、及び第二半導体層が順次積層された発光層部を含み、発光層部の他にも、例えば、発光層部と出発基板との間にエッチストップ層を形成することができる。また、発光層部の上に、さらに中間組成層、ＧａＰ電流拡散層、第一誘電体膜等を形成することができる。そして発光素子用ウェーハは、これらの層の一番上に、後述の支持基板と発光素子用ウェーハを接合するための第一接着層を有するものとすることができる。本発明では、これらの層を、出発基板の上に順次積層することで、発光素子ウェーハを作製することができる。出発基板としては特に限定されないが、ＧａＡｓやＧｅ基板とすることができ、第一半導体層、活性層、第二半導体層としてはＡｌＧａＩｎＰ系のものとすることができる。 The wafer for light emitting element manufactured in the step (1) includes a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked, and in addition to the light emitting layer portion, for example, a light emitting layer portion An etch stop layer can be formed between the and the starting substrate. In addition, an intermediate composition layer, a GaP current diffusion layer, a first dielectric film and the like can be further formed on the light emitting layer portion. The light emitting device wafer may have a first adhesive layer for bonding a supporting substrate to be described later and the light emitting device wafer on top of these layers. In the present invention, a light emitting device wafer can be produced by sequentially laminating these layers on the starting substrate. The starting substrate is not particularly limited, but may be a GaAs or Ge substrate, and the first semiconductor layer, the active layer, and the second semiconductor layer may be AlGaInP based.
［工程（２）］
　工程（２）は、支持基板を準備する工程である。 [Step (2)]
Step (2) is a step of preparing a support substrate.
　工程（２）で準備する支持基板は少なくとも可視透明基板からなる。可視透明基板としては、サファイア基板、石英基板等を用いることができる。可視透明基板の上には誘電体膜を、その上には上述の発光素子用ウェーハと支持基板を接合するための第二接着層を形成することができる。 The support substrate prepared in the step (2) comprises at least a visible transparent substrate. A sapphire substrate, a quartz substrate, etc. can be used as a visible transparent substrate. A dielectric film can be formed on the visible transparent substrate, and a second adhesive layer can be formed on the dielectric film for bonding the above-described wafer for light emitting device and the support substrate.
　また、工程（２）において、支持基板を第二接着層を有するものとする場合、フォトリソグラフィー法等により第二接着層を所望のパターンに加工することによって、スクライブ領域にある接着層を除去することができる。 In the step (2), when the support substrate has the second adhesive layer, the second adhesive layer is processed into a desired pattern by photolithography or the like to remove the adhesive layer in the scribe region. be able to.
［工程（３）］
　工程（３）は、支持基板を、接着層を介して発光素子用ウェーハに接着し、接合基板を作製する工程である。 [Step (3)]
The step (3) is a step of bonding the supporting substrate to the wafer for light emitting element through an adhesive layer to produce a bonded substrate.
　このとき、支持基板、もしくは発光素子ウェーハの少なくともいずれか一方を、接着層を有するものとすることが好ましい。ここで用いることができる接着剤としては、特に限定されずＢＣＢ、エポキシ系樹脂、塩ビ系樹脂、ウレタン系樹脂、アクリル系樹脂、シリコーン等が挙げられる。 At this time, it is preferable that at least one of the supporting substrate and the light emitting element wafer have an adhesive layer. The adhesive that can be used here is not particularly limited, and BCB, epoxy resin, polyvinyl chloride resin, urethane resin, acrylic resin, silicone and the like can be mentioned.
［工程（４）］
　工程（４）は、接合基板において、出発基板を除去して、第一半導体層を露出させる工程である。 [Step (4)]
The step (4) is a step of removing the starting substrate in the bonded substrate to expose the first semiconductor layer.
　工程（４）では、接合基板が有する出発基板をエッチング等により除去する。さらに、エッチストップ層があれば、エッチストップ層も除去することができる。これらの層を除去することにより、第一半導体層を露出させる。 In the step (4), the starting substrate of the bonded substrate is removed by etching or the like. Furthermore, with the etch stop layer, the etch stop layer can also be removed. By removing these layers, the first semiconductor layer is exposed.
［工程（５）］
　工程（５）は、接合基板の一部の領域において、少なくとも第一半導体層及び活性層を除去し、除去部を形成する工程である。 [Step (5)]
The step (5) is a step of removing at least the first semiconductor layer and the active layer in a partial region of the bonding substrate to form a removing portion.
　工程（５）では、少なくとも第一半導体層や活性層を切り欠いて除去し、除去部を形成する。また、第一半導体層と活性層だけではなく、可視透明基板のみを残し、全ての層を切り欠いて除去して、除去部を形成してもよい。 In the step (5), at least the first semiconductor layer and the active layer are cut and removed to form a removal portion. Further, not only the first semiconductor layer and the active layer but only the visible transparent substrate may be left, and all the layers may be cut and removed to form a removal portion.
［工程（６）］
　工程（６）は、第一半導体層の表面に第一オーミック電極を、除去部の表面に第二オーミック電極を形成する工程である。 [Step (6)]
The step (6) is a step of forming a first ohmic electrode on the surface of the first semiconductor layer and forming a second ohmic electrode on the surface of the removal portion.
　工程（６）では、例えば、以下の方法で電極を形成することができる。まず、工程（５）で除去部を形成した接合基板の表面に誘電体層を形成する。次に、フォトリソグラフィー法及びウェットエッチング法により、誘電体層に開口部（第一半導体層及び除去部が露出した部分）を形成する。そして開口部において、第一半導体層表面に第一オーミック電極を、除去部の表面に第二オーミック電極を形成する。 In the step (6), for example, the electrode can be formed by the following method. First, a dielectric layer is formed on the surface of the bonded substrate on which the removal portion is formed in the step (5). Next, an opening (a portion where the first semiconductor layer and the removed portion are exposed) is formed in the dielectric layer by photolithography and wet etching. Then, in the opening portion, the first ohmic electrode is formed on the surface of the first semiconductor layer, and the second ohmic electrode is formed on the surface of the removal portion.
［工程（７）］
　工程（７）は、レーザー光によるスクライブ・ブレーキング法を用いて前記接合基板から発光素子をダイス状に分離する工程である。 [Step (7)]
The step (7) is a step of separating the light emitting element from the bonded substrate in a die shape using a scribing / breaking method with a laser beam.
　工程（７）では、まず、スクライブ領域内では、可視透明基板のみを残し、全ての層を除去する。工程（２）でスクライブ領域にある接着層を除去していない場合には、ここで接着層の除去も同時に行うことができる。 In the step (7), first, in the scribe area, only the visible transparent substrate is left, and all layers are removed. If the adhesive layer in the scribe area is not removed in step (2), the adhesive layer can be removed at the same time.
　次に、図１に示すように、接着層（第一接着層１０及び第二接着層１５）を除去して可視透明基板１３が露出したスクライブ領域においてレーザー光によるスクライブ部２８を形成した後、ブレーキングを行い、発光素子をダイス状に分離する。 Next, as shown in FIG. 1, after the adhesive layer (the first adhesive layer 10 and the second adhesive layer 15) is removed to form a scribe portion 28 by laser light in the scribe region where the visible transparent substrate 13 is exposed, Breaking is performed to separate the light emitting elements into dies.
　以上のような発光素子の製造方法とすれば、スクライブ・ブレーキング工程においてスクライブする領域に接着層が存在しないようにすることで、接着剤が破壊され、接合部から剥離するのを抑制することができる。 According to the manufacturing method of the light emitting element as described above, the adhesive is not destroyed in the scribing / breaking step, thereby suppressing the adhesive from being broken and peeling from the bonding portion. Can.
　また、予めスクライブ領域にある接着層を除去するのは、スクライブを行う前であればいつでもよいが、工程（７）においてスクライブを行う直前、もしくは工程（２）で支持基板を準備するときとすれば、比較的容易に行うことができる。また、接着剤が存在しない領域の幅を、スクライブ方向に対して垂直な方向で２０μｍ以上とすることで、確実に接着層にレーザー光を照射しないで済むことから、劇的な剥離改善効果が得られる。このとき、接着剤が存在しない領域の幅の上限についての制限は特にないが、実用上の観点から、スクライブ方向に対して垂直な方向で１００μｍ以下とすることが好ましく、５０μｍ以下とすることがより好ましく、３０μｍ以下とすることがさらに好ましい。 In addition, the adhesive layer in the scribing region may be removed any time before scribing, but immediately before scribing in the step (7) or when preparing the support substrate in the step (2). Can be done relatively easily. In addition, by setting the width of the area where the adhesive does not exist to be 20 μm or more in the direction perpendicular to the scribing direction, the adhesive layer does not have to be irradiated with the laser light reliably, so the dramatic improvement in peeling is achieved. can get. At this time, there is no particular limitation on the upper limit of the width of the region where the adhesive does not exist, but from a practical point of view, it is preferably 100 μm or less in the direction perpendicular to the scribing direction, and 50 μm or less It is more preferable that the thickness be 30 μm or less.
　以下、第一の実施形態と第二の実施形態を用いて、本発明の発光素子の製造方法を、図を参照しながら更に詳細に説明するが、本発明はこれに限定されるものではない。 Hereinafter, although the manufacturing method of the light emitting element of this invention is demonstrated in more detail, referring a figure using 1st embodiment and 2nd embodiment, this invention is not limited to this .
［第一実施形態］
［工程（１）］
　最初に本発明の第一実施形態について説明する。図２に示すように、発光素子用ウェーハ１を、例えば［００１］方向に１５度傾斜したＧａＡｓ基板（出発基板）２上に有機金属気相成長法（ＭＯＶＰＥ）法にて、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．１～１．０μｍのエッチストップ層３、厚さ０．５～１．０μｍの第一導電型第一半導体層４、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．１～１．０μｍの活性層５、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．５～１．０μｍの第二導電型第二半導体層６、ＧａｙＩｎ１－ｙＰ（０．０≦ｙ≦１．０）から成る中間組成層７、０．５～２０μｍの厚さを有するＧａＰ電流拡散層８を順次積層して形成することができる。 First Embodiment
[Step (1)]
First, the first embodiment of the present invention will be described. As shown in FIG. 2, the wafer 1 for light emitting elements is formed on a GaAs substrate (starting substrate) 2 inclined by 15 degrees in, for example, the [001] direction by metal organic chemical vapor deposition (MOVPE) method (Al x Ga 1-x ) y In 1-y P (0 ≦ x1,1, 0.4 ≦ y ≦ 0.6), an etch stop layer 3 with a thickness of 0.1 to 1.0 μm, a thickness of 0.5 to Thickness 0 of the first conductive type first semiconductor layer 4 of 1.0 μm and (Al x Ga 1 -x ) y In 1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) .1 ~ 1.0 .mu.m active layer 5, (Al x Ga 1-x ) y in 1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) having a thickness of 0.5 to the second semiconductor layer 6 the second conductivity type of 1.0μm, Ga y in 1-y P Ga with (0.0 ≦ y ≦ 1.0) of the intermediate composition layers 7,0.5 ~ 20μm having a thickness of It can be formed by sequentially stacking a current diffusion layer 8.
　発光素子用ウェーハ１の作製方法はＭＯＶＰＥに限定されるものではなく、分子線エピタキシー（ＭＢＥ）法や、化学線エピタキシー（ＣＢＥ）法で作製してもよい。また、図示しないが、ＧａＡｓ基板と第一半導体層の間にバッファ層を設けてもよい。 The manufacturing method of the wafer 1 for light emitting elements is not limited to MOVPE, and may be manufactured by a molecular beam epitaxy (MBE) method or a actinic ray epitaxy (CBE) method. Although not shown, a buffer layer may be provided between the GaAs substrate and the first semiconductor layer.
　また、図３に示すように、発光素子用ウェーハ１は、ＧａＰ電流拡散層８の上にさらにＳｉＯ２あるいはＳｉＮｘからなる第一誘電体膜９を例えば厚さ０．４μｍにて形成し、その上にＢＣＢ接着剤をスピンコートにて塗布した第一接着層１０を形成することで第一接合層１１を有するものとすることができる。第一接着層の厚さはＢＣＢ接着剤の粘度とスピンコート時回転数によって変わるが、例えば回転数５０００ｒｐｍにて０．５μｍ程度の第一接着層１０を形成することができる。本実施形態では第一接合層１１を設けたが、本発明に用いる発光素子用ウェーハは、第一接合層１１を有しない構造、あるいは第一誘電体膜９を有しない構造、もしくは第一接着層１０を有しない構造でもよい。 Further, as shown in FIG. 3, in the light emitting device wafer 1, a first dielectric film 9 made of SiO 2 or SiN x is further formed on the GaP current diffusion layer 8 to a thickness of, for example, 0.4 μm. The first bonding layer 11 can be provided by forming the first bonding layer 10 on which the BCB adhesive is applied by spin coating. The thickness of the first adhesive layer varies depending on the viscosity of the BCB adhesive and the rotation speed at the time of spin coating. For example, the first adhesive layer 10 of about 0.5 μm can be formed at a rotation speed of 5000 rpm. Although the first bonding layer 11 is provided in the present embodiment, the wafer for a light emitting element used in the present invention has a structure without the first bonding layer 11, a structure without the first dielectric film 9, or a first bonding The structure without the layer 10 may be used.
［工程（２）］
　支持基板３０は、図４に示すように、サファイアあるいは石英等の可視透明基板１３上に例えばＳｉＯ２あるいはＳｉＮｘからなる誘電体膜１４を形成し、その上にさらに、例えばＢＣＢ樹脂からなる接着剤を塗布して第二接着層１５を形成することで、第二接合層１２を有するものとすることができる。第二接着層１５の厚さはＢＣＢ接着剤の粘度とスピンコート時回転数によって変わるが、本実施形態では回転数５０００ｒｐｍにて０．５μｍ程度の第二接着層１５を形成することができる。なお、第一接着層１０を形成した場合、第二接着層１５を設けなくともよいし、また、第二接着層１５を形成した場合、第一接着層１０を設けなくともよく、両方に形成してもよい。また、接着剤としてＢＣＢ樹脂の他に、エポキシ等の他の透明かつ常温で液状の部材で第一接着層１０及び第二接着層１５を形成してもよい。 [Step (2)]
In the supporting substrate 30, as shown in FIG. 4, a dielectric film 14 made of, for example, SiO 2 or SiN x is formed on a visible transparent substrate 13 such as sapphire or quartz, and an adhesive made of, for example, BCB resin is further formed thereon. By applying the agent to form the second adhesive layer 15, the second bonding layer 12 can be provided. The thickness of the second adhesive layer 15 varies depending on the viscosity of the BCB adhesive and the spin speed during spin coating, but in the present embodiment, the second adhesive layer 15 of about 0.5 μm can be formed at a rotational speed of 5000 rpm. When the first adhesive layer 10 is formed, the second adhesive layer 15 may not be provided, and when the second adhesive layer 15 is formed, the first adhesive layer 10 may not be provided, and both may be formed. You may In addition to the BCB resin as an adhesive, the first adhesive layer 10 and the second adhesive layer 15 may be formed of another transparent and liquid member such as epoxy, such as epoxy.
［工程（３）］
　次に図５に示すように第一接着層１０と第二接着層１５を対向させ、かつ、真空もしくは減圧雰囲気下で圧力と熱を加えることで第一接着層１０と第二接着層１５を接着した接合基板１６を形成する。圧力は６Ｎ／ｃｍ２以上、温度は１００℃以上の条件で圧着することで接着することができる。特に３０Ｎ／ｃｍ２、３００℃に達する条件で接合することが好適である。 [Step (3)]
Next, as shown in FIG. 5, the first adhesive layer 10 and the second adhesive layer 15 are opposed to each other, and pressure and heat are applied under vacuum or reduced pressure atmosphere to form the first adhesive layer 10 and the second adhesive layer 15. The bonded substrate 16 is formed. The pressure can be adhered by pressure bonding under the conditions of 6 N / cm 2 or more and the temperature of 100 ° C. or more. In particular, bonding is preferably performed under conditions of reaching 30 N / cm 2 and 300 ° C.
［工程（４）］
　次に図６に示すように接合基板１６よりＧａＡｓ基板２を化学的エッチングにより除去する。化学的エッチング液はＡｌＧａＩｎＰ系材料とエッチング選択性があるものが好ましく、一般にはアンモニア含有エッチャントで除去する。ＧａＡｓ基板２を除去した後、エッチストップ層３を除去し、第一半導体層露出面（第一の面）１８を有する接合基板１７とする。なお、エッチストップ層３は、ＡｌＧａＩｎＰ系材料をエッチングする過酸化水素と酸との混合液にて除去する。 [Step (4)]
Next, as shown in FIG. 6, the GaAs substrate 2 is removed from the bonding substrate 16 by chemical etching. The chemical etching solution is preferably one having etching selectivity with the AlGaInP based material, and is generally removed by using an ammonia containing etchant. After the GaAs substrate 2 is removed, the etch stop layer 3 is removed to form a bonded substrate 17 having a first semiconductor layer exposed surface (first surface) 18. The etch stop layer 3 is removed by a mixed solution of hydrogen peroxide and an acid for etching the AlGaInP based material.
［工程（５）］
　次に図７に示すように接合基板１７より第一半導体層露出面１８の一部を切り欠き、除去部（第二の面）１９を形成する。この態様では、第一半導体層４と活性層５を除去し、第二半導体層６を露出させている。 [Step (5)]
Next, as shown in FIG. 7, a part of the first semiconductor layer exposed surface 18 is cut away from the bonding substrate 17 to form a removal portion (second surface) 19. In this aspect, the first semiconductor layer 4 and the active layer 5 are removed to expose the second semiconductor layer 6.
［工程（６）］
　次に図８に示すように切り欠かれた側面２０を被覆するように、誘電体層２１を形成し、開口部２２を設ける。誘電体層２１はＳｉＯ２又はＳｉＮｘが好適である。誘電体層の製膜には、ゾルゲル法、スパッタ法、ＣＶＤ法いずれの方法も選択できる。開口部２２は誘電体層２１を成膜後、フォトリソグラフィー法によりマスク部を形成し、ＢＨＦによるウェットエッチング法にて露出部を形成することにより設けることができる。 [Step (6)]
Next, a dielectric layer 21 is formed and an opening 22 is provided so as to cover the notched side surface 20 as shown in FIG. The dielectric layer 21 is preferably SiO 2 or SiN x . Any of sol-gel method, sputtering method and CVD method can be selected for film formation of the dielectric layer. The openings 22 can be provided by forming the dielectric layer 21, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
　次に図９に示すように第一半導体層露出面１８の一部に第一オーミック電極２３、除去部１９の一部に第二オーミック電極２４を形成する。 Next, as shown in FIG. 9, the first ohmic electrode 23 is formed on a part of the first semiconductor layer exposed surface 18, and the second ohmic electrode 24 is formed on a part of the removal portion 19.
［工程（７）］
　次に図１０に示すようにフォトレジストを用いたフォトリソグラフィーにより、第一半導体層露出面１８全体と除去部１９の一部を被覆する被覆部２５と開口部２６を形成する。 [Step (7)]
Next, as shown in FIG. 10, a covering 25 and an opening 26 are formed to cover the entire first semiconductor layer exposed surface 18 and a part of the removing portion 19 by photolithography using a photoresist.
　次に図１１に示すようにドライエッチング法にて開口部２６を除去し、可視透明基板１３の一部２７を露出させる。ここでのドライエッチングにより、スクライブ領域にある接着層が除去されることになる。ＡｌＧａＩｎＰ層の除去は、ＩＣＰ装置内で、Ｃｌ含有ガスとＡｒの混合雰囲気にて行い、ＳｉＯ２もしくはＳｉＮｘの誘電体層とＢＣＢ層の除去はＦ含有ガスとＡｒの混合雰囲気にて行うことができる。圧力雰囲気は０．５Ｐａ、出力はプラズマ３００Ｗとすることができる。Ｃｌ含有ガスを使用する層の除去とＦ含有ガスを使用する層の除去は、別々のチャンバーで行うこともできるし、真空雰囲気からウェーハを取り出すことなく、ガスの切替のみで同一チャンバー内にて実施することもできる。 Next, as shown in FIG. 11, the opening 26 is removed by dry etching to expose a portion 27 of the visible transparent substrate 13. The dry etching here removes the adhesive layer in the scribe area. The removal of the AlGaInP layer is performed in a mixed atmosphere of Cl-containing gas and Ar in the ICP apparatus, and the removal of the SiO 2 or SiN x dielectric layer and the BCB layer is performed in a mixed atmosphere of F-containing gas and Ar Can. The pressure atmosphere can be 0.5 Pa, and the output can be plasma 300 W. The removal of the layer using the Cl-containing gas and the removal of the layer using the F-containing gas can be performed in separate chambers, or in the same chamber only by switching the gas without removing the wafer from the vacuum atmosphere. It can also be implemented.
　次に図１２に示すように、露出部２７形成後、フォトレジストによる被覆部２５を除去する。被覆部２５を除去後、露出部２７にレーザーを照射してスクライブ部２８を形成する。そしてスクライブ部２８に沿ってブレーキング処理を実施し、ダイス化する。 Next, as shown in FIG. 12, after the formation of the exposed portion 27, the covering portion 25 with the photoresist is removed. After removing the covering portion 25, the exposed portion 27 is irradiated with a laser to form a scribe portion 28. Then, the breaking process is performed along the scribing unit 28 and diced.
　このような第一実施形態の方法であればレーザー照射領域に接着剤層が存在しないため接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制した発光素子を比較的容易に製造することができる。 According to the method of the first embodiment, since the adhesive layer does not exist in the laser irradiation area, the adhesive absorbs the laser energy and is broken, and it is relatively easy to suppress the peeling from the bonding portion. Can be manufactured.
［第二実施形態］
［工程（１）］
　次に本発明の第二実施形態について説明する。図１３に示すように発光素子用ウェーハ１を、［００１］方向に１５度傾斜したＧａＡｓ基板（出発基板）２上に有機金属気相成長法（ＭＯＶＰＥ）法にて、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．１～１．０μｍのエッチストップ層３、厚さ０．５～１．０μｍの第一導電型第一半導体層４、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．１～１．０μｍの活性層５、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０≦ｘ≦１，０．４≦ｙ≦０．６）からなる厚さ０．５～１．０μｍからなる第二導電型第二半導体層６、ＧａｙＩｎ１－ｙＰ（０．０≦ｙ≦１．０）から成る中間組成層７、０．５～２０μｍの厚さを有するＧａＰ電流拡散層８を順次積層して形成することができる。 Second Embodiment
[Step (1)]
Next, a second embodiment of the present invention will be described. As shown in FIG. 13, the wafer 1 for light emitting element is formed on a GaAs substrate (starting substrate) 2 inclined by 15 degrees in the [001] direction by metal organic chemical vapor deposition (MOVPE) method (Al x Ga 1- x ) y In 1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6), an etch stop layer 3 with a thickness of 0.1 to 1.0 μm, and a thickness of 0.5 to 1. first conductivity type first semiconductor layer 4 of 0μm, (Al x Ga 1- x) y in 1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) having a thickness of 0.1 the active layer 5 of ~ 1.0μm, (Al x Ga 1 -x) y in 1-y P (0 ≦ x ≦ 1,0.4 ≦ y ≦ 0.6) having a thickness of 0.5 to 1. the second semiconductor layer 6 the second conductivity type made of 0μm, Ga y in 1-y P Ga with (0.0 ≦ y ≦ 1.0) of the intermediate composition layers 7,0.5 ~ 20μm having a thickness of It can be formed by sequentially stacking a current diffusion layer 8.
　発光素子用ウェーハ１の作製方法はＭＯＶＰＥに限定されるものではなく、分子線エピタキシー（ＭＢＥ）法や、化学線エピタキシー（ＣＢＥ）法で作製してもよい。また、図示しないが、ＧａＡｓ基板と第一半導体層の間にバッファ層を設けてもよい。 The manufacturing method of the wafer 1 for light emitting elements is not limited to MOVPE, and may be manufactured by a molecular beam epitaxy (MBE) method or a actinic ray epitaxy (CBE) method. Although not shown, a buffer layer may be provided between the GaAs substrate and the first semiconductor layer.
　また、図１４に示すように発光素子用ウェーハ１を、ＧａＰ電流拡散層８の上に例えばＳｉＯ２あるいはＳｉＮｘからなる第一誘電体膜９を厚さ０．４μｍ程度にて形成して第一接合層１１を有するものとすることができる。本実施形態では第一接合層１１を設けたが、第一接合層１１を有しない構造でもよい。 Further, as shown in FIG. 14, a wafer 1 for light emitting element is formed by forming a first dielectric film 9 made of, for example, SiO 2 or SiN x with a thickness of about 0.4 μm on the GaP current diffusion layer 8. It can have one bonding layer 11. Although the first bonding layer 11 is provided in the present embodiment, the first bonding layer 11 may not be provided.
［工程（２）］
　支持基板３０は、図１５に示すようにサファイアあるいは石英等の可視透明基板１３上にＳｉＯ２あるいはＳｉＮｘからなる誘電体膜１４を形成し、その上にさらにＢＣＢ接着剤を塗布した接着層１５´を形成することで第二接合層１２を有するものとすることができる。接着層１５´の厚さはＢＣＢ接着剤の粘度とスピンコート時回転数によって変わるが、例えば回転数５０００ｒｐｍにて０．５μｍの接着層１５´を形成することができる。 [Step (2)]
As shown in FIG. 15, the supporting substrate 30 is an adhesive layer 15 on which a dielectric film 14 made of SiO 2 or SiN x is formed on a visible transparent substrate 13 such as sapphire or quartz, and a BCB adhesive is further applied thereon. The second bonding layer 12 can be provided by forming '. The thickness of the adhesive layer 15 'varies depending on the viscosity of the BCB adhesive and the rotation speed at the time of spin coating. For example, the adhesive layer 15' of 0.5 μm can be formed at a rotational speed of 5000 rpm.
　次に図１６に示すように接着層１５´を所望のパターン２９の形状に加工する。この段階で、スクライブ領域にある接着層が除去されることになる。接着層１５´として、ＢＣＢ材料のうち、感光性材料を選択した場合、フォトリソグラフィー法により所望のパターン２９を得ることができる。また、接着層１５´としてＢＣＢ材料のうち、非感光性材料を選択した場合、フォトレジスト法により所望のパターンとなるようにレジストを被覆し、Ｆ含有ガス雰囲気のＩＣＰ装置にて所望のパターン２９を得ることができる。ここでパターン２９の形状及び大きさは求める発光素子の大きさと接着層１５´の厚さによって制約を受ける。パターン２９の形状及び大きさは、求める発光素子の大きさと開口部２６の差以下となる。 Next, as shown in FIG. 16, the adhesive layer 15 ′ is processed into the shape of the desired pattern 29. At this stage, the adhesive layer in the scribe area is removed. When a photosensitive material is selected among the BCB materials as the adhesive layer 15 ′, a desired pattern 29 can be obtained by a photolithography method. When a non-photosensitive material is selected from the BCB materials as the adhesive layer 15 ', a resist is coated by a photoresist method so that a desired pattern is obtained, and a desired pattern 29 is formed by an ICP apparatus containing F-containing gas. You can get Here, the shape and size of the pattern 29 are limited by the size of the light emitting element to be obtained and the thickness of the adhesive layer 15 '. The shape and size of the pattern 29 are equal to or less than the difference between the size of the light emitting element to be obtained and the opening 26.
［工程（３）］
　次に図１７に示すように第一接合層１１と第二接合層１２を対向させ、かつ、真空又は減圧雰囲気下で圧力と熱を加えることで第一接合層１１と第二接合層１２を接着した接合基板１６を形成する。圧力を６Ｎ／ｃｍ２以上、温度を１００℃以上の条件で圧着することで接着することができる。特に３０Ｎ／ｃｍ２、３００℃に達する条件で接合することが好適である。 [Step (3)]
Next, as shown in FIG. 17, the first bonding layer 11 and the second bonding layer 12 are opposed to each other, and pressure and heat are applied under a vacuum or reduced pressure atmosphere to form the first bonding layer 11 and the second bonding layer 12. The bonded substrate 16 is formed. It can adhere | attach by pressure bonding on pressure of 6 N / cm < 2 > or more, and temperature 100 degreeC or more conditions. In particular, bonding is preferably performed under conditions of reaching 30 N / cm 2 and 300 ° C.
［工程（４）］
　次に図１８に示すように接合基板１６よりＧａＡｓ基板２を化学的エッチングにより除去する。化学的エッチング液はＡｌＧａＩｎＰ系材料とエッチング選択性があるものが好ましく、一般にはアンモニア含有エッチャントで除去する。ＧａＡｓ基板２を除去した後、エッチストップ層３を除去し、第一半導体層露出面１８を有する接合基板１７を形成する。なお、エッチストップ層３はＡｌＧａＩｎＰ系材料をエッチングする過酸化水素と酸との混合液にて除去する。 [Step (4)]
Next, as shown in FIG. 18, the GaAs substrate 2 is removed from the bonding substrate 16 by chemical etching. The chemical etching solution is preferably one having etching selectivity with the AlGaInP based material, and is generally removed by using an ammonia containing etchant. After the GaAs substrate 2 is removed, the etch stop layer 3 is removed to form a junction substrate 17 having the first semiconductor layer exposed surface 18. The etch stop layer 3 is removed by a mixed solution of hydrogen peroxide and an acid for etching the AlGaInP based material.
［工程（５）］
　次に図１９に示すように接合基板１７より、パターン２９を超えない範囲で第一半導体層露出面１８を残留させ、かつ、第一半導体層露出面１８の一部を切り欠き、除去部１９を形成する。 [Step (5)]
Next, as shown in FIG. 19, the first semiconductor layer exposed surface 18 is left from the bonding substrate 17 in a range not exceeding the pattern 29, and a part of the first semiconductor layer exposed surface 18 is notched. Form
［工程（６）］
　次に図２０に示すように切り欠かれた側面２０を被覆するように、誘電体層２１を形成し、開口部２２を設ける。誘電体層２１はＳｉＯ２又はＳｉＮｘが好適である。誘電体層の製膜には、ゾルゲル法、スパッタ法、ＣＶＤ法いずれの方法も選択できる。開口部２２は誘電体層２１を成膜後、フォトリソグラフィー法によりマスク部を形成し、ＢＨＦによるウェットエッチング法にて露出部を形成することにより設けることができる。 [Step (6)]
Next, dielectric layer 21 is formed and opening 22 is provided so as to cover notched side surface 20 as shown in FIG. The dielectric layer 21 is preferably SiO 2 or SiN x . Any of sol-gel method, sputtering method and CVD method can be selected for film formation of the dielectric layer. The openings 22 can be provided by forming the dielectric layer 21, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
　次に図２１に示すように第一半導体層露出面１８の一部に第一オーミック電極２３、除去部１９の一部に第二オーミック電極２４を形成する。 Next, as shown in FIG. 21, the first ohmic electrode 23 is formed on a part of the first semiconductor layer exposed surface 18, and the second ohmic electrode 24 is formed on a part of the removal portion 19.
［工程（７）］
　次に図２２に示すようにフォトレジストを用いたフォトリソグラフィーにより、第一半導体層露出面１８全体と除去部１９の一部を被覆する被覆部２５と開口部２６を形成する。 [Step (7)]
Next, as shown in FIG. 22, a cover 25 and an opening 26 are formed to cover the entire first semiconductor layer exposed surface 18 and a part of the removal portion 19 by photolithography using a photoresist.
　次に図２３に示すようにドライエッチング法にて開口部２６を除去し、可視透明基板１３の一部２７を露出させる。ＡｌＧａＩｎＰ層の除去は、ＩＣＰ装置内で、Ｃｌ含有ガスとＡｒの混合雰囲気にて行い、ＳｉＯ２もしくはＳｉＮｘの誘電体層とＢＣＢ層の除去はＦ含有ガスとＡｒの混合雰囲気にて行なうことができる。圧力雰囲気は０．５Ｐａ、出力はプラズマ３００Ｗとすることができる。Ｃｌ２含有ガスを使用する層の除去とＦ含有ガスを使用する層の除去は、別々のチャンバーで行うこともできるし、真空雰囲気からウェーハを取り出すことなく、ガスの切替のみで同一チャンバー内にて実施することもできる。 Next, as shown in FIG. 23, the opening 26 is removed by dry etching to expose a portion 27 of the visible transparent substrate 13. The removal of the AlGaInP layer is performed in a mixed atmosphere of Cl-containing gas and Ar in the ICP apparatus, and the removal of the SiO 2 or SiN x dielectric layer and the BCB layer is performed in a mixed atmosphere of F-containing gas and Ar Can. The pressure atmosphere can be 0.5 Pa, and the output can be plasma 300 W. The removal of the layer using the Cl 2 -containing gas and the removal of the layer using the F-containing gas can be performed in separate chambers, or in the same chamber only by switching the gas without removing the wafer from the vacuum atmosphere. Can also be implemented.
　次に図２４に示すように、露出部２７形成後、フォトレジストによる被覆部２５を除去する。被覆部２５を除去後、露出部２７にレーザーを照射してスクライブ部２８を形成する。そしてスクライブ部２８に沿ってブレーキング処理を実施し、ダイス化する。 Next, as shown in FIG. 24, after the formation of the exposed portion 27, the coated portion 25 with the photoresist is removed. After removing the covering portion 25, the exposed portion 27 is irradiated with a laser to form a scribe portion 28. Then, the breaking process is performed along the scribing unit 28 and diced.
　このような第二実施形態の方法であってもレーザー照射領域に接着剤層が存在しないため接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制した発光素子を比較的容易に製造することができる。 Even in the method of the second embodiment, since the adhesive layer does not exist in the laser irradiation area, the adhesive absorbs the laser energy, is destroyed, and the light emitting element which suppresses peeling from the joint is relatively made. It can be easily manufactured.
　以下、実施例及び比較例を用いて本発明を具体的に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES The present invention will be specifically described below using Examples and Comparative Examples, but the present invention is not limited to these.
［実施例１］
　図２～図１２に示すような本発明の発光素子の製造方法の第一実施形態に基づいて、発光素子の製造を行った。 Example 1
A light emitting device was manufactured based on the first embodiment of the method for manufacturing a light emitting device of the present invention as shown in FIGS.
　まず、発光素子用ウェーハの作製を行った。出発基板としてＧａＡｓ（００１）からなる基板（出発基板）を準備し、この基板上に、機能層たるダブルヘテロ層（発光層）をＭＯＶＰＥ法にて形成した。発光層は、下部クラッド層（第一半導体層）、活性層、上部クラッド層（第二半導体層）を順次積層したものとした。 First, a wafer for light emitting element was manufactured. A substrate (starting substrate) made of GaAs (001) was prepared as a starting substrate, and a double hetero layer (light emitting layer) as a functional layer was formed on this substrate by the MOVPE method. The light emitting layer was formed by sequentially laminating a lower cladding layer (first semiconductor layer), an active layer, and an upper cladding layer (second semiconductor layer).
　第一半導体層及び第二半導体層は、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０．６≦ｘ≦１．０、０．４≦ｙ≦０．６）の組成が選択され、本実施例では、第一半導体層として、ｎ型ＡｌＩｎＰクラッド層を０．７μｍ（ドーピング濃度３．０×１０１７／ｃｍ３）、ｎ型Ａｌ０．８５ＧａＩｎＰ層を０．３μｍ（ドーピング濃度１．０×１０１７／ｃｍ３）の２層構造とした。 In the first semiconductor layer and the second semiconductor layer, the composition of (Al x Ga 1 -x ) y In 1-y P (0.6 ≦ x ≦ 1.0, 0.4 ≦ y ≦ 0.6) is selected In the present embodiment, as the first semiconductor layer, the n-type AlInP cladding layer is 0.7 μm (doping concentration 3.0 × 10 17 / cm 3 ), and the n-type Al 0.85 GaInP layer is 0.3 μm (doping) It was set as the two-layer structure of density | concentration 1.0 * 10 < 17 > / cm < 3 >.
　活性層は、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（０．１５≦ｘ≦０．８、０．４≦ｙ≦０．６）から選択され、波長によって組成ｘ及びｙは変更した。本実施例において活性層は、多重活性層を用いた。活性層及び障壁層の膜厚は求める波長により変更され、それぞれ４～１２ｎｍの範囲で波長に合わせて調整した。 The active layer is selected from (Al x Ga 1 -x ) y In 1-y P (0.15 ≦ x ≦ 0.8, 0.4 ≦ y ≦ 0.6), and the compositions x and y are dependent on the wavelength. changed. In this example, multiple active layers were used as the active layer. The film thicknesses of the active layer and the barrier layer were changed according to the wavelength to be obtained, and were adjusted to the wavelength in the range of 4 to 12 nm, respectively.
　第二半導体層として、ｐ型ＡｌＩｎＰクラッド層を０．９μｍ（ドーピング濃度３．０×１０１７／ｃｍ３）、ｐ型Ａｌ０．６ＧａＩｎＰ層を０．１μｍ（ドーピング濃度１．０×１０１７／ｃｍ３）の２層構造とした。 As the second semiconductor layer, the p-type AlInP cladding layer is 0.9 μm (doping concentration 3.0 × 10 17 / cm 3 ), and the p-type Al 0.6 GaInP layer is 0.1 μm (doping concentration 1.0 × 10 17) It was set as the 2 layer structure of / cm < 3 >.
　発光層上には、ＧａＩｎＰからなる緩衝層を成膜した。次に緩衝層上にＳｉＯ２からなる誘電体膜を厚さ０．４μｍにて形成し、その上にＢＣＢ接着剤をスピンコートにて塗布して第一接着層を形成した。 A buffer layer of GaInP was formed on the light emitting layer. Next, a dielectric film of SiO 2 was formed to a thickness of 0.4 μm on the buffer layer, and a BCB adhesive was applied thereon by spin coating to form a first adhesive layer.
　次に、支持基板の準備を行った。まず、サファイア上にＳｉＯ２からなる誘電体膜を形成し、その上にＢＣＢ樹脂からなる接着剤を塗布した第二接着層を形成した。 Next, the support substrate was prepared. First, a dielectric film composed of SiO 2 was formed on sapphire, and a second adhesive layer coated with an adhesive composed of BCB resin was formed thereon.
　次に発光用ウェーハと支持基板を接合するため、第一接着層と第二接着層を接着した。その後、ＧａＡｓ基板をアンモニア含有エッチャントにより除去した。引き続きエッチストップ層を除去し、第一半導体層を露出させた。次に第一半導体層及び活性層の一部を切り欠き、第二半導体の一部を露出させた。 Next, in order to bond the light emitting wafer and the support substrate, the first adhesive layer and the second adhesive layer were adhered. Thereafter, the GaAs substrate was removed by an ammonia-containing etchant. Subsequently, the etch stop layer was removed to expose the first semiconductor layer. Next, a part of the first semiconductor layer and the active layer was cut out to expose a part of the second semiconductor.
　次に切り欠かれた側面を被覆するように、誘電体層を形成し、開口部を設けた。誘電体層はＳｉＯ２とし、ＴＥＯＳとＯ２を使用するＰ－ＣＶＤ法にて製膜した。開口部は誘電体層を成膜後、フォトリソグラフィー法によりマスク部を形成し、ＢＨＦによるウェットエッチング法にて露出部を形成することで設けた。 Next, a dielectric layer was formed and an opening was provided so as to cover the notched side surface. The dielectric layer was SiO 2 and was deposited by P-CVD using TEOS and O 2 . The opening was formed by forming a dielectric layer, forming a mask by photolithography, and forming an exposed portion by wet etching using BHF.
　次に第一オーミック電極、第二オーミック電極を形成した。その後、フォトリソグラフィー及びドライエッチング法にて、可視透明基板の一部を露出させた。このとき露出部の幅（スクライブ方向と垂直な方向）を５，１０，１５，２０，２５，３０μｍとした。ＡｌＧａＩｎＰ層の除去は、ＩＣＰ装置内で、Ｃｌ含有ガスとＡｒの混合雰囲気にて行い、ＳｉＯ２の誘電体層とＢＣＢ層の除去はＦ含有ガスとＡｒの混合雰囲気にて行なった。圧力雰囲気は０．５Ｐａ、出力はプラズマ３００Ｗとした。 Next, a first ohmic electrode and a second ohmic electrode were formed. Thereafter, part of the visible transparent substrate was exposed by photolithography and dry etching. At this time, the width of the exposed portion (direction perpendicular to the scribing direction) was 5, 10, 15, 20, 25, 30 μm. The removal of the AlGaInP layer was performed in a mixed atmosphere of Cl-containing gas and Ar in an ICP apparatus, and the removal of the SiO 2 dielectric layer and the BCB layer was performed in a mixed atmosphere of F-containing gas and Ar. The pressure atmosphere was 0.5 Pa, and the output was 300 W plasma.
　露出部形成後、フォトレジストを除去し、レーザーを照射してスクライブ部を形成した。スクライブ部に沿ってブレーキング処理を実施し、ダイス化した。このとき接着剤による接合部が剥離した面積と露出部の幅（ストリート部幅）の関係を図２８に示す。後述する比較例（幅０μｍ）に比べ、いずれの露出部の幅とした場合にも、剥離面積が減少しているのが判る。特に幅が２０μｍ以上の場合には剥離が劇的に改善した。 After forming the exposed portion, the photoresist was removed, and laser was irradiated to form a scribed portion. The breaking process was performed along the scribing part and diced. FIG. 28 shows the relationship between the area of the bonded portion peeled off by the adhesive and the width of the exposed portion (street portion width). It can be seen that the peeling area is reduced regardless of the width of any exposed portion, as compared to the comparative example (width 0 μm) described later. Especially when the width was 20 μm or more, the peeling was dramatically improved.
［実施例２］
　図１３～図２４に示すような本発明の発光素子の製造方法の第二実施形態に基づいて、発光素子の製造を行った。接着剤を所望のパターン形状に加工してから透明基板を貼り合わせることを除き、実施例１と同様な方法で発光素子を製造した。図２８に剥離状況の結果を示す。実施例２においても、実施例１と同様な結果が得られた。 Example 2
A light emitting device was manufactured based on the second embodiment of the method for manufacturing a light emitting device of the present invention as shown in FIGS. 13 to 24. A light emitting device was manufactured in the same manner as Example 1, except that the adhesive was processed into a desired pattern shape and then the transparent substrate was attached. FIG. 28 shows the results of the peeling state. Also in Example 2, the same result as in Example 1 was obtained.
［比較例］
　図２５～図２７に示すような従来の方法を用いて、発光素子の製造を行った。接着剤が存在する領域でスクライブを行ったことを除いて実施例１と同様な方法で発光素子を製造した。図２８に剥離状況の結果を示す。実施例１、２に比べて剥離面積が大きいことが判る。 [Comparative example]
The light emitting device was manufactured using the conventional method as shown in FIGS. 25 to 27. A light emitting device was manufactured in the same manner as Example 1, except that scribing was performed in the region where the adhesive was present. FIG. 28 shows the results of the peeling state. It can be seen that the peeling area is larger than in Examples 1 and 2.
　以上のように、本発明の発光素子の製造方法であれば、紫外域において光吸収帯を有する接着剤で発光層と透明基板を接合した基板をレーザーでスクライブするスクライブ・ブレーキング工程において、可視透明接着剤がレーザーエネルギーを吸収し、破壊され、接合部から剥離することを抑制することができることが明らかになった。 As described above, the method of manufacturing a light emitting device according to the present invention is visible in a scribing and breaking step of scribing a substrate obtained by bonding a light emitting layer and a transparent substrate with an adhesive having a light absorption band in the ultraviolet region. It has been found that the transparent adhesive can suppress laser energy absorption, destruction and peeling from the joint.
　なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has the substantially same constitution as the technical idea described in the claims of the present invention, and the same effects can be exhibited by any invention. It is included in the technical scope of

Claims (4)

  1. 　発光素子の製造方法であって、
    （１）出発基板上に、エピタキシャル成長により、第一半導体層、活性層、及び第二半導体層が順次積層された発光層部を含む積層構造を形成し、発光素子用ウェーハを作製する工程、
    （２）支持基板を準備する工程、
    （３）前記支持基板を、接着層を介して前記発光素子用ウェーハに接着し、接合基板を作製する工程、
    （４）前記接合基板において、前記出発基板を除去して、前記第一半導体層を露出させる工程、
    （５）前記接合基板の一部の領域において、少なくとも前記第一半導体層及び活性層を除去し、除去部を形成する工程、
    （６）前記第一半導体層の表面に第一オーミック電極を、前記除去部の表面に第二オーミック電極を形成する工程、及び
    （７）レーザー光によるスクライブ・ブレーキング法を用いて前記接合基板から発光素子をダイス状に分離する工程、
    を含み、かつ、スクライブを行う前に、予めスクライブ領域にある前記接着層を除去しておくことを特徴とする発光素子の製造方法。     A method of manufacturing a light emitting device,
    (1) forming a laminated structure including a light emitting layer portion in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially laminated by epitaxial growth on a starting substrate, thereby producing a wafer for a light emitting device;
    (2) preparing a support substrate;
    (3) bonding the supporting substrate to the wafer for light emitting devices through an adhesive layer to produce a bonded substrate;
    (4) removing the starting substrate from the bonded substrate to expose the first semiconductor layer;
    (5) removing at least the first semiconductor layer and the active layer in a partial region of the bonded substrate to form a removal portion;
    (6) forming a first ohmic electrode on the surface of the first semiconductor layer, and forming a second ohmic electrode on the surface of the removal portion, and (7) the bonding substrate using a scribing / breaking method using a laser beam. Separating the light emitting element from the
    And a method of manufacturing a light emitting device, wherein the adhesive layer in the scribe region is removed in advance before scribing.
  2. 　前記工程（７）において、スクライブを行う前に、前記スクライブ領域にある前記接着層を除去することを特徴とする請求項１に記載の発光素子の製造方法。 The method according to claim 1, wherein in the step (7), the adhesive layer in the scribe region is removed before scribing.
  3. 　前記工程（２）において、前記支持基板を、接着層を有するものとし、かつ、前記接着層を、スクライブ領域には前記接着層が存在しないように除去加工されたものとすることを特徴とする請求項１に記載の発光素子の製造方法。 In the step (2), the support substrate has an adhesive layer, and the adhesive layer is removed so that the adhesive layer does not exist in the scribe region. A method of manufacturing a light emitting device according to claim 1.
  4. 　前記接着剤が存在しない領域の幅を、スクライブ方向に対して垂直な方向で２０μｍ以上とすることを特徴とする請求項１から請求項３のいずれか一項に記載の発光素子の製造方法。 The method according to any one of claims 1 to 3, wherein the width of the region where the adhesive is not present is 20 μm or more in a direction perpendicular to the scribing direction.
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