WO2009133792A1 - 有機光電変換素子およびその製造方法 - Google Patents
有機光電変換素子およびその製造方法 Download PDFInfo
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- WO2009133792A1 WO2009133792A1 PCT/JP2009/057948 JP2009057948W WO2009133792A1 WO 2009133792 A1 WO2009133792 A1 WO 2009133792A1 JP 2009057948 W JP2009057948 W JP 2009057948W WO 2009133792 A1 WO2009133792 A1 WO 2009133792A1
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- WIPO (PCT)
- Prior art keywords
- transport layer
- photoelectric conversion
- hole transport
- layer
- conversion element
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- CACDWRVXMWGLKR-UHFFFAOYSA-N ac1l9mop Chemical compound O.O.O.O.O.O CACDWRVXMWGLKR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
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- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
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- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 210000000689 upper leg Anatomy 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/141—Side-chains having aliphatic units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
- C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/91—Photovoltaic applications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an organic photoelectric conversion element and a method for producing the same.
- organic photoelectric conversion elements such as organic solar cells and optical sensors
- a multi-junction element represented by a tandem structure in which two or more cells are stacked is expected.
- each cell is not simply stacked, but an appropriate joined body is provided between the cells.
- the joined body is usually formed by laminating a plurality of layers such as an electron transport layer, a charge recombination layer, and a hole transport layer.
- PEDOTZP SS poly (3,4-ethylenedioxythiophene) (PEDOT) and poly (4-styrenesulfonic acid) (PS S) ⁇ is used for the hole transport layer that constitutes this assembly.
- This hole transport layer is formed by a coating method using a coating solution containing PEDOTZP SS after forming an electron transport layer and a charge recombination layer (for example, Advanced Functiona 1 Materials, 2006, Vo l. 16, p. 1897-19 03, Science, 2007, Vo l. 317, p. 222-225). Disclosure of the invention
- An object of the present invention is to provide an organic photoelectric conversion element including a joined body in which damage to be caused during film formation is suppressed, and a manufacturing method thereof.
- the present invention is an organic photoelectric conversion element constituted by laminating a plurality of active layers and a joined body positioned between the active layers between a pair of electrodes,
- the joined body is formed from a plurality of layers including a hole transport layer,
- the hole transport layer is formed first and by an application method.
- this invention is an organic photoelectric conversion element whose said hole transport layer is a hole transport layer formed using the coating liquid whose pH is 5-9.
- the present invention is also a photoelectric conversion element, wherein the joined body includes an electron transport layer formed by a coating method using a dispersion liquid in which particles made of titanium dioxide are dispersed in a dispersion medium.
- this invention is an organic photoelectric conversion element in which the said active layer contains a conjugated polymer compound and a fullerene derivative.
- the present invention also relates to a method for producing an organic photoelectric conversion element by laminating a pair of electrodes, a plurality of active layers between the pair of electrodes, and a joined body positioned between the active layers.
- the hole transport layer is first formed by a coating method, and the method for producing an organic photoelectric conversion element.
- the organic photoelectric conversion element of the present embodiment is configured by laminating at least a plurality of active layers and a joined body positioned between the active layers between a pair of electrodes, and the joined body includes a hole transport layer.
- the hole transport layer is formed of a plurality of layers, and the hole transport layer is formed first by a coating method among the plurality of layers constituting the joined body. That is, in the formation of the joined body, the hole transport layer is first formed by a coating method.
- the organic photoelectric conversion element of this embodiment has a so-called multi-junction structure. An example of the element structure of the organic photoelectric conversion element is shown below.
- (repeat unit)” indicates the stack of the active layer and the bonded body.
- Body (active layer / bonded body) symbol “n” represents an integer of 2 or more
- “(repeat unit) n” is a stacked body in which n stacked bodies (active layer Z bonded body) are stacked. Represents.
- An electron transport layer may be provided between the cathode and the active layer, and a hole transport layer may be provided between the active layer and the cathode.
- (a) is an element of the so-called tan ⁇ 2 , mu structure (a multi-junction structure in which two cells are stacked is called a tandem structure), and (b) is a (n + 1) cell stack. It is a multi-junction element.
- the joined body is configured by stacking a plurality of layers, and includes at least a hole transport layer.
- the conjugate is formed, for example, by laminating a hole transport layer, a charge recombination layer, and an electron transport layer in this order.
- the joined body may be composed of only a hole transport layer and an electron transport layer, or may have a layer other than the three layers described above.
- the hole transport layer and the electron transport layer Among the transport layers the hole transport layer is disposed on the cathode side, and the electron transport layer is disposed on the anode side.
- the active layer may be, for example, a laminate in which a first layer containing an electron-accepting compound and a second layer containing an electron-donating compound are in contact with each other, and the electron-accepting compound And a single layer containing an electron donating compound.
- the organic photoelectric conversion element is usually formed by sequentially laminating a pair of electrodes, an active layer, and a bonded body on a substrate in the order described below.
- the element (a) can be formed by sequentially laminating a cathode, an active layer, a bonded body, an active layer, and an anode in this order on a substrate.
- the element (b) above is formed by sequentially laminating a cathode, an active layer, a bonded body, an active layer, a bonded body, By doing so, it can be formed.
- the method for producing an organic photoelectric conversion element of the present invention is characterized in that, in the step of forming a bonded body, the hole transport layer is formed first and by a coating method among a plurality of layers constituting the bonded body. And The substrate should be one that does not change when the electrode is formed and the organic layer is formed.
- the material for the substrate examples include glass, plastic, polymer film, and silicon.
- the opposite The electrode that is, the electrode far from the substrate
- the electrode is preferably transparent or translucent.
- the hole transport layer in the present embodiment is formed first by a coating method among a plurality of layers constituting the joined body.
- the hole transport layer is formed by a coating method after forming the electron transport layer and the charge recombination layer.
- the hole transport layer When forming the hole transport layer, the electron transport layer previously formed, There was a risk of damaging the charge recombination layer.
- the hole transport layer since the hole transport layer is formed first, when the hole transport layer is formed, damage is not caused to each layer of the joined body excluding the hole transport layer. A reduced organic photoelectric conversion element can be realized, and thus an organic photoelectric conversion element with high photoelectric conversion efficiency can be realized.
- the hole transport layer is preferably made of a polymer compound, more preferably a polymer compound having high conductivity.
- the conductivity of the conductive high polymeric compound is usually conductivity 1 0 5 ⁇ : a 1 0 5 S / cm, preferably 1 0- 3 ⁇ : a 1 0 4 S / cm.
- the function of the hole transport layer is to increase the efficiency of hole injection into the charge recombination layer, to prevent the injection of electrons from the active layer, to increase the hole transport capability, and to the charge recombination layer.
- a polymer compound having a function of transporting holes examples thereof include a high molecular compound containing a thiopheneyl group, a high molecular compound containing an aniline diyl group, and a high molecular compound containing a pyrrole diyl group.
- These polymer compounds may have an acid group such as a sulfonic acid group.
- examples thereof include poly (thiophene) and poly (aniline) having an acid group such as a sulfonic acid group as a substituent. Can be given.
- the poly (thiophene) and poly (aniline) may further have a substituent. Examples thereof include a halogen atom, an alkyl group having 1 to 20 carbon atoms, and an alkyl group having 1 to 20 carbon atoms. Alkoxy group, aryl group having 6 to 60 carbon atoms
- n represents an integer of 1 to 4
- m represents an integer of 1 to 6
- p represents an integer of 0 to 5.
- X represents an oxygen atom or a direct bond.
- the coating solution and the solution include dispersion systems such as emulsion (emulsion) and suspension (suspension).
- the material constituting the hole transport layer may contain another polymer compound as a binder in addition to the above polymer compound.
- binders include polystyrene sulfonic acid, polyvinyl phenol, nopolac resin, and polyvinyl alcohol.
- the coating solution used when forming the hole transport layer by a coating method includes a material to be the hole transport layer and a solvent.
- the coating solution preferably has a pH of 5 to 9 and more preferably a pH of 6 to 8 from the viewpoint of increasing the electromotive force of the organic photoelectric conversion element. That's right.
- the solvent for the coating solution include water, alcohol, and the like. Specific examples of alcohol include methanol, ethanol, isopropanol, butanol, ethylene glycolanol, propylene glycolanol, butoxyethanol, and methoxybutanol. Can be mentioned. Further, for example, a mixed solution containing two or more kinds of the above-described solvents may be used as a solvent for the coating solution.
- pH is a value measured using a pH test paper.
- spin coating method for coating film formation, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire per coat method, dip coating method, spray coating method, screen printing method
- Application methods such as flexographic printing method, offset printing method, ink jet printing method, dispenser printing method, nozzle coating method, and single coating method can be used.
- spin coating method spin coating method, flexographic printing method, It is preferable to use an ink jet printing method or a disk dispenser printing method. .
- the charge recombination layer is not necessarily provided, but it is preferable to provide the charge recombination layer between the electron transport layer and the hole transport layer for the purpose of an omic junction between the electron transport layer and the hole transport layer.
- the charge recombination layer is preferably formed in a state where a plurality of fine particles are aggregated or in a thin film shape so that light can be easily transmitted.
- the charge recombination layer typically includes a metal.
- the charge recombination layer may contain a metal oxide or a metal halide, but when the weight of the metal is 100, the sum of the weight of the metal oxide and the weight of the metal halide. Is preferably 10 or less, more preferably substantially made of only metal.
- the metals include lithium, beryllium, sodium, magnesium, anorium, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel Kel, copper, zinc, gallium, genoremanium, rubidium, strontium, yttrium, zirconium, niobium, molypden, ruthenium, rhodium, palladium, silver, force donium, indium, tin, antimony, cesium, barium, lanthanum, hafnium, Tantanole, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, lanthanides, etc.
- An alloy of these metals, graphite, or an intercalation compound between these metals and graphite can also be used for the charge recombination layer.
- metals aluminum, magnesium, titanium, chromium, iron, nickel, copper, zinc, gallium, zirconium, molybdenum, silver, indium, tin, and gold are preferable.
- the method for forming the charge recombination layer is not particularly limited, but a vacuum vapor deposition method from powder can be used.
- the electron transport layer contains an alkali metal such as lithium fluoride, a halide of an alkaline earth metal, an oxide, an electron accepting compound described later, and the like. Further, the electron transport layer may be configured using particles made of an inorganic semiconductor such as titanium oxide. Functions of the electron transport layer include a function to increase electron injection efficiency into the charge recombination layer, a function to prevent hole injection from the active layer, a function to increase electron transport ability, and a function to suppress deterioration of the active layer. Etc. There are no particular restrictions on the method for depositing the electron transport layer, but for low molecular weight electron transport materials, vacuum deposition from powder, film deposition from solution or molten state, and polymer electron transport materials are available.
- Examples thereof include a method of forming a film from a solution or a molten state.
- a polymer binder may be used in combination.
- Examples of the method for forming the electron transport layer from the solution include the same film formation method as the method for forming the hole transport layer from the above-described solution.
- the electron transport layer is formed by a coating method using particles made of an inorganic semiconductor such as titanium oxide, it is formed by coating a predetermined layer with a dispersion liquid in which the inorganic semiconductor is dispersed in a dispersion medium.
- the dispersion contains a dispersion medium and an inorganic semiconductor, and the inorganic semiconductor is preferably fine particles, and is preferably titanium dioxide.
- the particle diameter of the inorganic semiconductor is preferably 10 / im or less, more preferably 1 ⁇ or less. From the viewpoint of increasing the photoelectric conversion efficiency of the photoelectric conversion element, it is preferably 100 nm or less, and more preferably 50 nm or less. From the viewpoint of improving the dispersibility of the inorganic semiconductor in the dispersion medium, the particle diameter is preferably 30 nm or less. In order to improve the dispersibility of the inorganic semiconductor in the dispersion medium, it is preferable to add a dispersant to the dispersion.
- the dispersant examples include acetic acid, hydrochloric acid, nitric acid, sulfuric acid and the like, and acetic acid is preferable from the viewpoint of easy handling of the dispersion and prevention of corrosion of the electrode.
- the particle diameter of the inorganic semiconductor of 10 / m or less means that the particle diameter of substantially all inorganic semiconductor particles contained in the dispersion is 10 m or less.
- the dispersion medium contained in the dispersion include water, alcohol, and the like.
- alcohol examples include methanol, ethanol, isopropanol, butanol, ethylen glycol, propylene glycol, butoxy ethanol, methoxy butanol. And so on.
- the dispersion used in the present invention may contain two or more of these solvents.
- the electric conductivity of the inorganic semiconductor is preferably 0.0 lm SZ cm or more, and more preferably 1 m S / cm or more. From the viewpoint of increasing the photoelectric conversion efficiency, 1 O m SZ cm or more is preferable.
- the electron transport layer is formed by applying the dispersion medium described above on the charge recombination layer and further removing the dispersion medium. Is done.
- the electron transport layer When the electron transport layer is formed on the cathode, the electron transport layer Is formed by applying the above-mentioned dispersion medium on the cathode and further removing the dispersion medium.
- the dispersion medium is removed, for example, by leaving it in the atmosphere for a predetermined time, and heat treatment is performed as necessary.
- Examples of the method for applying the dispersion liquid to a predetermined layer include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, and spray coating.
- the film thickness is preferably 1 nm to 100 nm, more preferably 2 nm to l OOO nm, still more preferably 5 nm to 500 nm, and more preferably 20 nm. ⁇ 200 nm.
- the active layer preferably contains a polymer compound, and may contain one kind of polymer compound alone, or may contain two or more kinds of polymer compounds. Further, in order to improve the charge transporting property of the active layer, an electron donating compound and / or an electron accepting compound can be mixed and used in the active layer. From the viewpoint of containing many heterojunction interfaces, the electron-accepting compound is preferably a fullerene derivative. Among these, it is preferable that the active layer contains a conjugated polymer compound and a fullerene derivative. For example, an organic thin film containing a conjugated polymer compound and a fullerene derivative can be used as the active layer.
- the ratio of the fullerene derivative in the active layer containing the fullerene derivative and the electron donating compound is preferably 10 to 100 parts by weight with respect to 100 parts by weight of the electron donating compound. More preferably, it is 500 parts by weight.
- the electron-accepting compound suitably used in the organic photoelectric conversion element is such that the HOMO energy of the electron-accepting compound is higher than the HOMO energy of the electron-donating compound, and the L UMO energy of the electron-accepting compound is electron donation '14 Higher than L UMO energy of the compound.
- the electron donating compound contained in the active layer may be a low molecular compound or a high molecular compound.
- Examples of the low molecular weight compound include phthalocyanine, metal phthalocyanine, porphyrin, metal porphyrin, oligothiophene, tetracene, pentacene, and rubrene.
- Examples of the polymer compound include polybulur rubazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having an aromatic amine in the side chain or the main chain, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof. And polyphenylene vinylene and derivatives thereof, polyphenylene vinylene and derivatives thereof, and polyfluorene and derivatives thereof.
- the electron-accepting compound contained in the active layer may be a low molecular compound or a high molecular compound.
- Low molecular weight compounds include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyananthraquinodimethane and its derivatives, fluorenone derivatives, diphenyl Dicyanethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, polyfluorene and its derivatives, C 6 .
- fullerenes and derivatives thereof and phenanthrene derivatives such as bathocuproine.
- the polymer compound include polybur force rubazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and polypyrrole. Derivatives thereof, polyphenylene vinylene and derivatives thereof, poly vinylene vinylene and derivatives thereof, polyfluorene and derivatives thereof And derivatives thereof. Of these, fullerene and its derivatives are preferred. For fullerenes, c 6 . , C 7. And fullerenes such as carbon nanotubes, and derivatives thereof. c 6 . Examples of fullerene derivatives include the following.
- the thickness of the active layer is usually 1 ⁇ ⁇ ! ⁇ 100 m, preferably 2 nm to 1 OOO nm, more preferably 5 nm to 500 nm, and even more preferably 20 nm to 200 nm.
- the method for forming the active layer include a solvent, a conjugated polymer compound, and fullerene induction. The method by the film-forming from the composition containing a body is mentioned.
- Solvents include, for example, toluene, xylene, mesitylene, tetralin, decalin, bicycl hexyl, n-ptynolebenzene, sec-butinorebenzene, tert-butinorebenzene and other unsaturated hydrocarbon solvents, carbon tetrachloride, Chlomouth Form, Dichloromethane, Dichloroethane, Chlorobutane, Bromobutane, Chloromouth Pentane, Bromopentane, Black Hexane, Bromohexane, Black Mouth Hexane, Mouth Mokuchi Hexane, etc.
- halogenated unsaturated hydrocarbon solvents such as black benzene, dichroic benzene, and trichloro benzene
- ether solvents such as tetrahydrofuran and tetrahydropyran.
- conjugated polymer compound examples include an unsubstituted or substituted fluorenediyl group, an unsubstituted or substituted benzofluorenedyl group, a dibenzofurandyl group, an unsubstituted or substituted dibenzothiophene group, an unsubstituted group.
- substituted rubazole diyl group unsubstituted or substituted thiopheneyl group, unsubstituted or substituted frangyl group, unsubstituted or substituted pyrrole diyl group, unsubstituted or substituted benzothiadiazole diyl group, unsubstituted or substituted vinylene
- One or two or more kinds selected from the group consisting of a vinylene diyl group, an unsubstituted or substituted chain vinylendiyl group, and an unsubstituted or substituted triphenylamine diyl group are used as repeating units, and the repeating units are Examples thereof include a polymer compound bonded directly or via a linking group.
- the linking group include phenylene, biphenylene, naphthalene diyl, anthracenedyl, and the like.
- conjugated polymer compound one or two or more kinds selected from the group consisting of a polymer compound having a fluorenediyl group and a thiopheneyl group are used as a repeating unit, and the repeating units are directly or linked to each other.
- examples thereof include a polymer compound bonded through a group. (electrode;)
- Examples of transparent or translucent electrode materials include conductive metal oxide films and translucent metal thin films. Specific examples include indium oxide, zinc oxide, tin oxide, indium tin oxide (abbreviation ITO), indium zinc oxide (abbreviation IZO), Gold, platinum, silver, copper and the like are used, and ⁇ , ⁇ and tin oxide are preferable. Further, as the electrode, an organic transparent conductive film such as polyaline and its derivatives, polythiophene and its derivatives may be used. As the opaque electrode, for example, a metal thin film having a thickness that does not transmit light can be used, and the above-described metal paste and its alloys can be used.
- Non-transparent electrodes include, for example, lithium, sodium, potassium, rubidium, cesium, magnesium, canoleum, strontium, barium, anoleminium, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, Metals such as ytterbium, gold, silver, platinum, copper, mangan, titanium, cobalt, nickel, tungsten, tin, and alloys of two or more of these, graphite, or graphite intercalation compounds are used. Examples of the method for producing the electrode include vacuum deposition, sputtering, ion plating, and plating.
- a metal electrode can also be produced by a coating method using a metal ink, a metal paste, a low melting point metal, or the like.
- additional layers may be provided between the cathode and the active layer, between the active layer and the cathode, and between the active layer and the joined body.
- additional layer include a charge transport layer such as an electron transport layer and a hole transport layer.
- the hole transport layer and the electron transport layer the above-mentioned electron donating compounds and electron accepting compounds can be used, respectively.
- alkali metals such as lithium fluoride and alkaline earth metals can be used. Halides and oxides, titanium oxide, etc.
- the organic photoelectric conversion element of this embodiment can be operated as an organic thin-film solar cell by generating photovoltaic power between the electrodes by irradiating light such as sunlight from a transparent or translucent electrode. .
- the organic thin film solar cell module By integrating a plurality of organic thin film solar cells, it can be used as an organic thin film solar cell module.
- a photocurrent flows and it can be operated as an organic light sensor. It can also be used as an organic image sensor by integrating multiple organic photosensors.
- the polystyrene-equivalent number average molecular weight and number average molecular weight of the polymer were determined using GPC (PL-GPC 2000) manufactured by GPC Laboratory.
- a measurement sample was prepared by dissolving the polymer in o-dichloromouth benzene to a concentration of about 1% by weight.
- O-Dichroic benzene was used as the mobile phase of GPC.
- the measurement sample was flowed at a flow rate of 1 mL / min at a measurement temperature of 140 ° C.
- PLGEL 10 MI XED—B manufactured by PL Laboratory
- dichlorobis (triphenylphosphine) palladium (II) 0.02 g
- the temperature was raised to 105 ° C. and 42.2 ml of a 2 mol ZL aqueous sodium carbonate solution was added dropwise.
- the reaction was allowed to proceed for 5 hours, and phenylboronic acid (2.6 g) and 1.8 ml of toluene were added and stirred at 105 ° C for 16 hours.
- 700 ml of toluene and 200 ml of 7.5% aqueous sodium trimethylcarbylate trihydrate trihydrate were added thereto, followed by stirring at 85 ° C. for 3 hours.
- the aqueous layer was removed from the reaction mixture, and then washed twice with 300 ml of 60 ° C. ion exchange water, once with 300 ml of 3% acetic acid at 60 ° C., and further three times with 300 ml of ion exchange water at 60 ° C.
- the organic layer was passed through a column filled with celite, alumina, and silica, and the column was washed with 800 ml of hot toluene.
- the resulting solution was concentrated to 700 ml, poured into 2 L of methanol, and a polymer was obtained by reprecipitation.
- the polymer was recovered by filtration, washed with 500 ml of methanol, acetone, methanol, and then vacuum-dried at 50 ° C to obtain the following formula:
- polymer 1 (referred to as “polymer 1”).
- the polystyrene equivalent number average molecular weight of Polymer 1 was 5.4 ⁇ 10 4 , and the weight average molecular weight was 1.1 ⁇ 10 5 .
- PCBM [6, 6] -phenyl C 61 monobutyric acid methyl ester
- polymer 1 as an electron donor compound
- solvent As a result, 1000 parts by weight of o-dichroic benzene was mixed. Thereafter, the mixture was filtered through a Teflon (registered trademark) filter having a pore diameter of 1. A composition 1 was produced.
- LiF was deposited on a glass substrate with an ITO film with a thickness of 150 nm as a cathode (cathode as a solar cell) by sputtering using a vacuum evaporator. Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness of about 100 nm) of the front cell of the organic thin film solar cell. Thereafter, an HIL 691 solution (manufactured by P 1 extronics, trade name Plexcore HI L691) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm).
- HIL 691 solution product name: Plexcore HIL 6 91, manufactured by Plextronics
- a 1 was 100 nm thick as an anode (a positive electrode as a solar cell) by a vacuum evaporation machine. It vapor-deposited so that it might become.
- the degree of vacuum in vapor deposition were all 1 ⁇ 9 X 10- 3 P a.
- the shape of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 ) to generate a certain amount of light.
- a solar simulator trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 .
- the open circuit voltage was 1.4 V.
- a solution obtained by diluting titania sol (PASOL HPW-10R, manufactured by Catalytic Chemical Industry Co., Ltd.) with water four times by spin coating is applied to a glass substrate with a 150 nm thick ITO film as a cathode by sputtering. Then, it was heated in the atmosphere at 120 ° C. for 10 minutes to obtain an electron transport layer (film thickness of about 20 nm). Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness of about 100 nm) of the front cell of the organic thin film solar cell.
- PASOL HPW-10R manufactured by Catalytic Chemical Industry Co., Ltd.
- HIL 691 solution product name: Plexcore HIL 691 manufactured by Plextronics
- a hole transport layer film thickness of about 30 nm.
- pH test paper manufactured by Advantech Toyo Co., Ltd., product name “Yue Persal”, model number “07011030”
- gold was deposited as a charge recombination layer using a vacuum deposition machine.
- titania sol catalyst Kosei Kogyo Co., Ltd.
- PASO A solution obtained by diluting L HPW-1 OR with water four times was applied by spin coating to obtain an electron transport layer (film thickness: about 20 nm). No heat treatment was performed. Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness of about 100 nm) of a pack cell of an organic thin film solar cell. After that, HIL 691 solution (P 1 extronics, product name P 1 excore HIL 691) was applied by spin coating, and finally A 1 was deposited as an anode with a vacuum evaporation machine so that the thickness was 1 OO nm. . The degree of vacuum in vapor deposition were all 1 ⁇ 9 X 10- 3 P a. The shape of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm. (Evaluation)
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: 100 mW / cm 2 ) to generate a certain amount of light.
- a solar simulator trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: 100 mW / cm 2 .
- the open circuit voltage was 1.5 V.
- a solution obtained by diluting titania sol (Catalyst Chemical Industries, Ltd. PASOL HPW-1 OR) 4 times with water on a glass substrate with a 150 nm thick ITO film as a cathode by sputtering is applied by spin coating. 120 in the atmosphere. C, heated for 10 minutes to obtain an electron transport layer (film thickness of about 20 nm). Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness of about 100 nm) of the front cell of the organic thin film solar cell.
- an OC 1200 solution (manufactured by P 1 extronics, trade name Plexcore OC 1200, purchased from Sigma Aldrich) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm).
- a pH test paper manufactured by Advantech Toyo Co., Ltd., product name “Ubersal”, model number “07011030”
- the pH was 7.
- 2 nm of gold was deposited as a charge recombination layer using a vacuum deposition machine.
- titania sol (PASO L HPW-1 OR manufactured by Catalytic Chemical Industry Co., Ltd.) was diluted 4 times with water.
- the open state of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm.
- P l e x c o r e OC 1 200 is 2% of the following snorephonized polythiophene.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 ) to generate a certain amount of light.
- a solar simulator trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2
- the open circuit voltage was 1.5 V.
- a glass substrate with an ITO film with a thickness of 150 nm as an anode formed by sputtering is applied to the H I L 691 solution (Pl e x t r o n i cs, product name P l e x c o r e
- HIL 691 was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm). Thereafter, the composition 1 is applied by spin coating, and an organic thin film solar cell is applied. A pond active layer (thickness about 100 nm) was obtained. After that, 4 nm of LiF was deposited with a vacuum deposition machine. Then, 2 nm of gold was deposited as a charge recombination layer using a vacuum deposition machine. Thereafter, a hole transport layer (film thickness: about 50 nm) was applied by spin coating with a HIL 691 solution (product name: P 1 excore HI L 691 manufactured by Plextronics).
- composition 1 was applied by spin coating to obtain an active layer (thickness: about 10 Onm) of an organic thin film solar cell.
- LiF was deposited to 4 nm with a vacuum deposition machine, and finally A 1 was deposited as a cathode with a vacuum deposition machine to a thickness of 100 nm.
- the degree of vacuum in vapor deposition was filed in every 1 ⁇ 9 X 10- 3 P a.
- the shape of the obtained organic thin film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 ) to generate a certain amount of light.
- a solar simulator trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2
- the open circuit voltage was 1. IV.
- an organic solar cell that generates power with a high open-circuit voltage could be realized by first forming the hole transport layer by coating. It was also confirmed that an organic solar cell that generates electric power with a higher open-circuit voltage could be realized by using an electron transport layer formed by a coating method using a dispersion liquid in which titanium oxide particles are dispersed.
- the hole transport layer formed by the coating method is formed first among the plurality of layers forming the joined body, so that the hole among the plurality of layers constituting the joined body is formed.
- the remaining layer excluding the transport layer is not damaged when the hole transport layer is formed, and an organic photoelectric conversion element including a bonded body in which the damage received when forming the film is suppressed can be realized. .
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- 2009-04-15 WO PCT/JP2009/057948 patent/WO2009133792A1/ja active Application Filing
- 2009-04-15 CN CN2009801141663A patent/CN102017213A/zh active Pending
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- 2009-04-21 JP JP2009102764A patent/JP2010192862A/ja active Pending
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Also Published As
Publication number | Publication date |
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US20110037066A1 (en) | 2011-02-17 |
JP2010192862A (ja) | 2010-09-02 |
KR20110008282A (ko) | 2011-01-26 |
EP2280433A1 (en) | 2011-02-02 |
CN102017213A (zh) | 2011-04-13 |
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