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TWI672387B - Sputtering target and method for using the same - Google Patents

Sputtering target and method for using the same Download PDF

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Publication number
TWI672387B
TWI672387B TW107129984A TW107129984A TWI672387B TW I672387 B TWI672387 B TW I672387B TW 107129984 A TW107129984 A TW 107129984A TW 107129984 A TW107129984 A TW 107129984A TW I672387 B TWI672387 B TW I672387B
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Taiwan
Prior art keywords
sputtering
protection
plate
protection unit
back plate
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TW107129984A
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Chinese (zh)
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TW202009316A (en
Inventor
楊清河
吳智穩
翁基祥
蘇夢鵬
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住華科技股份有限公司
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Priority to TW107129984A priority Critical patent/TWI672387B/en
Priority to CN201910183904.5A priority patent/CN110684950B/en
Application granted granted Critical
Publication of TWI672387B publication Critical patent/TWI672387B/en
Publication of TW202009316A publication Critical patent/TW202009316A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

濺射靶材及其使用方法。濺射靶材包括背板、濺射板與保護單元。背板具有上表面。濺射板設置在上表面上,並具有一濺射板邊緣。保護單元設置在上表面上,並相鄰濺射板邊緣。Sputtering target and method of using it. The sputtering target includes a back plate, a sputtering plate, and a protection unit. The back plate has an upper surface. The sputtering plate is disposed on the upper surface and has a sputtering plate edge. The protection unit is disposed on the upper surface and is adjacent to the edge of the sputtering plate.

Description

濺射靶材及其使用方法Sputtering target and its using method

本發明是有關於一種濺射靶材及其使用方法。The invention relates to a sputtering target and a method for using the same.

目前,濺鍍技術(sputtering)係為主要沉積鍍膜技術所使用的方式之一。濺鍍技術一般是在濺鍍腔室中形成電漿,電漿(plasma)會對金屬靶材進行離子轟擊(ion bombardment),使靶材的金屬原子撞擊出,而形成氣體分子發射到達所要沉積的基材上,氣體分子經過附著、吸附、表面遷徙、成核等濺鍍作用之後,最終在基材上形成具有金屬原子的金屬薄膜。濺鍍技術係廣泛地應用在工業生產和科學研究領域。然而,一般濺射靶材於濺鍍腔室中進行濺鍍製程時,背板對應濺射板邊緣容易被濺鍍消耗凹損,須進行重工,例如以砂紙磨平凹陷處並進行填補。At present, sputtering is one of the methods used for the main deposition coating technology. Sputtering technology generally forms a plasma in a sputtering chamber. The plasma performs ion bombardment on a metal target, causing the metal atoms of the target to strike out, and the gas molecules are emitted to reach the desired deposition. After the gas molecules are sputtered by adhesion, adsorption, surface migration, nucleation, etc. on the substrate, a metal film with metal atoms is finally formed on the substrate. Sputtering technology is widely used in the fields of industrial production and scientific research. However, when a sputtering target is generally sputtered in a sputtering chamber, the edge of the backing plate corresponding to the sputtering plate is easily damaged by sputtering and must be reworked, such as sanding the depressions and filling them with sandpaper.

本發明係有關於一種濺射靶材及其使用方法。The invention relates to a sputtering target and a method for using the same.

根據本發明之一方面,提出一種濺射靶材,其包括背板、濺射板、及保護單元。背板具有上表面。濺射板設置在上表面上,並具有一濺射板邊緣。保護單元設置在上表面上,並相鄰濺射板邊緣。According to an aspect of the present invention, a sputtering target is provided, which includes a back plate, a sputtering plate, and a protection unit. The back plate has an upper surface. The sputtering plate is disposed on the upper surface and has a sputtering plate edge. The protection unit is disposed on the upper surface and is adjacent to the edge of the sputtering plate.

根據本發明之另一方面,提出一種濺射靶材的使用方法,其包括以下步驟。提供上述濺射靶材,其中保護單元是可卸除地設置在背板上。According to another aspect of the present invention, a method for using a sputtering target is provided, which includes the following steps. The above sputtering target is provided, wherein the protection unit is detachably provided on the back plate.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

以下係以一些實施例做說明。須注意的是,本揭露並非顯示出所有可能的實施例,未於本揭露提出的其他實施態樣也可能可以應用。再者,圖式上的尺寸比例並非按照實際產品等比例繪製。因此,說明書和圖示內容僅作敘述實施例之用,而非作為限縮本揭露保護範圍之用。另外,實施例中之敘述,例如細部結構、製程步驟和材料應用等等,僅為舉例說明之用,並非對本揭露欲保護之範圍做限縮。實施例之步驟和結構各之細節可在不脫離本揭露之精神和範圍內根據實際應用製程之需要而加以變化與修飾。以下是以相同/類似的符號表示相同/類似的元件做說明。In the following, some examples are used for illustration. It should be noted that this disclosure does not show all possible embodiments, and other implementations not proposed in this disclosure may also be applicable. Moreover, the dimensional proportions in the drawings are not drawn according to the actual products. Therefore, the contents of the description and the drawings are only used to describe the embodiments, and not used to limit the scope of the disclosure. In addition, the descriptions in the embodiments, such as the detailed structure, process steps, and application of materials, are for illustration purposes only, and are not intended to limit the scope of the disclosure to be protected. The details of the steps and structures of the embodiments can be changed and modified according to the needs of the actual application process without departing from the spirit and scope of the present disclosure. The following uses the same / similar symbols to indicate the same / similar components for explanation.

第1A圖至第1D圖繪示根據第一實施例概念之濺射靶材的使用方法。1A to 1D illustrate a method of using a sputtering target according to the concept of the first embodiment.

請參照第1A圖,提供之背板308具有至少一凹口308A,凹口308A從背板308的上表面308S向內部凹入。如第1A圖所示,可配置兩個凹口308A,且兩個凹口308A彼此分離。Referring to FIG. 1A, the provided back plate 308 has at least one notch 308A, and the notch 308A is recessed from the upper surface 308S of the back plate 308 to the inside. As shown in FIG. 1A, two notches 308A may be arranged, and the two notches 308A are separated from each other.

請參照第1B圖與第1C圖,配置至少一保護單元326至背板308的凹口308A中,接下來配置濺射板118在背板308之上表面308S及保護單元326上,一實施例中濺射板118相對兩側之濺射板邊緣118E分別對應並接觸凹口308A中的保護單元326。凹口308A之尺寸可實質上等於或略大於保護單元326之尺寸,保護單元326之寬度W1(例如90mm至190mm)須配合背板308及濺射板118之寬度而定,以不超過背板308之寬度W且不小於濺射板118之寬度W2為基準,如濺射板118之寬度W2為90mm,保護單元326之寬度W1則不小於90mm。一實施例中,濺射板118之寬度W2約為180mm,背板308之寬度W約為190mm,故保護單元326之寬度W1在180mm至190mm之間,因此,保護單元326之寬度W1約佔該背板之寬度W的47%至100%。一實施例中,保護單元326之寬度W1與背板308之寬度W相同。Referring to FIG. 1B and FIG. 1C, at least one protection unit 326 is disposed in the notch 308A of the back plate 308, and then a sputtering plate 118 is disposed on the upper surface 308S of the back plate 308 and the protection unit 326. An embodiment The edges 118E of the sputtering plate 118 on opposite sides of the middle sputtering plate 118 respectively correspond to and contact the protection unit 326 in the notch 308A. The size of the notch 308A may be substantially equal to or slightly larger than the size of the protection unit 326. The width W1 of the protection unit 326 (for example, 90 mm to 190 mm) must be determined in accordance with the width of the back plate 308 and the sputtering plate 118 so as not to exceed the back plate. The width W of 308 is not less than the width W2 of the sputtering plate 118. For example, if the width W2 of the sputtering plate 118 is 90 mm, the width W1 of the protection unit 326 is not less than 90 mm. In one embodiment, the width W2 of the sputtering plate 118 is about 180 mm, and the width W of the back plate 308 is about 190 mm. Therefore, the width W1 of the protection unit 326 is between 180 mm and 190 mm. Therefore, the width W1 of the protection unit 326 is approximately The backplane has a width W of 47% to 100%. In one embodiment, the width W1 of the protection unit 326 is the same as the width W of the back plate 308.

濺射板118的材質可視欲沉積在基材上的薄膜材質而定,例如為金屬或氧化物。背板308與濺射板118的材質可為相同或不同。一實施例中,背板308的材質皆為鋁、鈦或銅等金屬,濺射板118的材質為鋁、鈦或銅等金屬或氧化銦錫氧化物。一實施例中,背板308的材質為銅,濺射板118的材質為鋁。The material of the sputtering plate 118 may depend on the material of the thin film to be deposited on the substrate, such as metal or oxide. The materials of the back plate 308 and the sputtering plate 118 may be the same or different. In one embodiment, the material of the back plate 308 is metal such as aluminum, titanium, or copper, and the material of the sputtering plate 118 is metal such as aluminum, titanium, or copper, or indium tin oxide. In one embodiment, the material of the back plate 308 is copper, and the material of the sputtering plate 118 is aluminum.

保護單元326的材質可相同或不同於背板308。例如保護單元326的材質可包括但不限於銅、鈦、鋁等金屬,或其它合適的材料。The material of the protection unit 326 may be the same or different from the back plate 308. For example, the material of the protection unit 326 may include, but is not limited to, metals such as copper, titanium, and aluminum, or other suitable materials.

請再參閱第1D圖所示,保護單元326之長度L約為90-150mm,背板308之長度L1約為3000mm,因此,保護單元326之長度L約佔背板308長度L1的3%至5%;保護單元326之高度H約為0.1-4mm,例如2mm,背板308之高度H1約為10-20mm,例如16mm,因此,保護單元326之高度H約佔背板308之高度H1的0.5%至20%,例如12.5%,即保護單元326不會貫穿整個背板308,也不會接觸背板308未承載濺射板118之下表面308B,其中下表面308B係與上表面308S平行且相對。Please refer to FIG. 1D again, the length L of the protection unit 326 is about 90-150mm, and the length L1 of the back plate 308 is about 3000mm. Therefore, the length L of the protection unit 326 accounts for about 3% of the length L1 of the back plate 308 to 5%; the height H of the protection unit 326 is about 0.1-4mm, such as 2mm, and the height H1 of the back plate 308 is about 10-20mm, such as 16mm. Therefore, the height H of the protection unit 326 occupies about the height H1 of the back plate 308. 0.5% to 20%, such as 12.5%, that is, the protection unit 326 will not penetrate the entire back plate 308, and will not contact the back surface 308 without the lower surface 308B of the sputter plate 118, where the lower surface 308B is parallel to the upper surface 308S And relative.

如圖所示,兩個保護單元326可藉由背板308彼此隔開。一實施例中,可利用固定件(未繪示)將保護單元326固定至背板308。固定件可包括但不限於螺絲、插栓、黏著劑(例如金屬黏著劑、軟焊劑等)等。此實施例中,保護單元326其露出凹口308A的上表面326S可實質上對準背板308的上表面308S,此實施例中,兩個保護單元326其露出凹口308A的上表面326S總面積約佔背板308的上表面308S總面積之3~10%,例如6%。兩個保護單元326總體積約佔背板308總體積的0.5~3%,例如0.75%。As shown, the two protection units 326 can be separated from each other by a back plate 308. In one embodiment, the protection unit 326 may be fixed to the back plate 308 by using a fixing member (not shown). The fixing member may include, but is not limited to, screws, plugs, adhesives (such as metal adhesives, solders, etc.) and the like. In this embodiment, the upper surface 326S of the protection unit 326 exposed from the notch 308A may be substantially aligned with the upper surface 308S of the back plate 308. In this embodiment, the two protection units 326 are exposed from the upper surface 326S of the notch 308A. The area occupies about 3 ~ 10% of the total area of the upper surface 308S of the back plate 308, such as 6%. The total volume of the two protection units 326 accounts for about 0.5 ~ 3% of the total volume of the backplane 308, for example, 0.75%.

請參照第1C圖與第1D圖,其中第1D圖是沿第1C圖所示之EF線繪示出的剖面圖。可利用接合件(未繪示)將濺射板118固定至背板308上,從而組裝完成濺射靶材320。Please refer to FIG. 1C and FIG. 1D, where FIG. 1D is a cross-sectional view taken along line EF shown in FIG. 1C. The sputter plate 118 may be fixed to the back plate 308 by using a bonding member (not shown), so that the sputtering target 320 is assembled.

一實施例中,背板308包含一上背板與下背板(未繪示),且保護單元326與承載濺射板118設置於上背板之上。In one embodiment, the back plate 308 includes an upper back plate and a lower back plate (not shown), and the protection unit 326 and the supporting sputtering plate 118 are disposed on the upper back plate.

一實施例中,背板308之中可選擇性的設置一冷卻管路或一磁性物質。In one embodiment, a cooling pipe or a magnetic substance may be selectively disposed in the back plate 308.

實施例中,保護單元326可設置在濺射靶材320於濺鍍腔室中進行濺鍍製程時,背板308可能被沖擊的區域,例如設置於緊鄰濺射板118相對兩側之濺射板邊緣118E,如此可避免背板308被沖擊損壞。如圖所示,此實施例中,濺射板118的相對兩側可各別與部分的保護單元326重疊。例如,保護單元326包括相連接的第一保護部330與第二保護部332,其中第一保護部330露出於濺射板118之外,第二保護部332乘載濺射板118並與濺射板118重疊。從上視圖來看,保護單元326的第一保護部330是從濺射板118的濺射板邊緣118E露出濺射板118之外,第二保護部332則接觸濺射板118且被濺射板118所覆蓋。實施例中,保護單元326可用以避免設置於其下方的背板308在濺射製程中被濺射沖擊而損壞的問題。In the embodiment, the protection unit 326 may be disposed in a region where the backing plate 308 may be impacted when the sputtering target 320 is performed in the sputtering chamber, for example, the sputtering is disposed adjacent to the opposite sides of the sputtering plate 118. The plate edge 118E can prevent the back plate 308 from being damaged by impact. As shown in the figure, in this embodiment, opposite sides of the sputtering plate 118 may be respectively overlapped with a part of the protection unit 326. For example, the protection unit 326 includes a first protection portion 330 and a second protection portion 332 connected to each other. The first protection portion 330 is exposed outside the sputtering plate 118, and the second protection portion 332 carries the sputtering plate 118 and is connected to the sputtering plate 118. The shooting plate 118 overlaps. From the top view, the first protection portion 330 of the protection unit 326 is exposed from the sputtering plate edge 118E of the sputtering plate 118 outside the sputtering plate 118, and the second protection portion 332 contacts the sputtering plate 118 and is sputtered. Covered by plate 118. In the embodiment, the protection unit 326 can be used to avoid the problem that the back plate 308 disposed below it is damaged by the sputtering impact during the sputtering process.

實施例中,可對濺射靶材320進行拆解。拆解方法包括將濺射板118從背板308卸除。亦可將保護單元326從背板308卸除。實施例中,保護單元326經濺鍍製程被沖擊而損壞後,可直接只對保護單元426進行替換,而不必對背板308進行重工,例如以砂紙磨平凹陷處並進行填補,也不必置換整個背板308,因此可降低製造成本,且更換保護單元326的方法簡單、快速,可提升製程效率。第2A圖至第2C圖繪示根據第二實施例概念之濺射靶材的使用方法。In the embodiment, the sputtering target 320 may be disassembled. The disassembly method includes removing the sputtering plate 118 from the back plate 308. The protection unit 326 can also be removed from the back plate 308. In the embodiment, after the protection unit 326 is damaged by being impacted by the sputtering process, the protection unit 426 can be directly replaced without the need to rework the backing plate 308. For example, the depressions are sanded and filled with sandpaper, and there is no need to replace them. The entire backplane 308 can reduce manufacturing costs, and the method of replacing the protection unit 326 is simple and fast, which can improve process efficiency. 2A to 2C illustrate a method of using a sputtering target according to the concept of the second embodiment.

請參照第2A圖,配置保護單元426至背板308的凹口308A中。背板308的結構與配置保護單元426的方法可類似參照第1A圖及第1B圖所述的揭露內容,於此不再贅述。此實施例中,保護單元426包括第一保護部430與第二保護部332,其與第一實施例的差異在於,其中第一保護部430具有凸部430U,凸部430U是凸出於背板308的上表面308S及第二保護部332。Referring to FIG. 2A, the protection unit 426 is disposed in the notch 308A of the back plate 308. The structure of the backplane 308 and the method of configuring the protection unit 426 can be similarly disclosed with reference to FIG. 1A and FIG. 1B, and will not be repeated here. In this embodiment, the protection unit 426 includes a first protection portion 430 and a second protection portion 332. The difference from the first embodiment is that the first protection portion 430 has a convex portion 430U, and the convex portion 430U is protruding from the back. The upper surface 308S of the plate 308 and the second protection portion 332.

請參照第2B圖與第2C圖,其中第2C圖是沿第2B圖所示之GH線繪示出的剖面圖。配置濺射板118至背板308及保護單元426上,並可利用接合件(未繪示)將濺射板118固定至背板308上,從而組裝完成濺射靶材420。一實施例中,凸部430U的高度H'低於濺射板118的高度H2,並與濺射板118並列。詳細舉例來說,濺射板118具有濺射板側面118W。保護單元426的第一保護部430的凸部430U具有保護部側面430W。濺射板側面118W與保護部側面430W互相面對或直接接觸,並可具有互補的形狀,此實施例中,濺射板側面118W高度約為20mm,保護部側面430W高度約為0.1-2mm,例如2mm。凸部430U凸出於背板308可用以輔助濺射板118之相對兩側定位,且減緩背板308於濺鍍製程中造成的沖擊而損壞,且便於替換,而延長背板308的使用壽命。此實施例中,進一步限定凸部430U之高度H'佔濺射板118之高度H2的安全比例為10%以下,以避免於濺鍍製程中,凸部430U與位於濺鍍板118上方的治具產生碰撞。Please refer to FIG. 2B and FIG. 2C, where FIG. 2C is a cross-sectional view taken along line GH shown in FIG. 2B. The sputtering plate 118 is arranged on the back plate 308 and the protection unit 426, and the sputter plate 118 can be fixed to the back plate 308 by using a bonding member (not shown), thereby assembling the sputtering target 420. In one embodiment, the height H ′ of the convex portion 430U is lower than the height H2 of the sputtering plate 118, and is parallel to the sputtering plate 118. For example, the sputtering plate 118 has a sputtering plate side 118W. The convex portion 430U of the first protection portion 430 of the protection unit 426 has a protection portion side surface 430W. The side 118W of the sputtering plate and the side 430W of the protection portion face each other or directly contact each other, and may have complementary shapes. In this embodiment, the height of the side 118W of the sputtering plate is about 20mm, and the height of the side 430W of the protection portion is about 0.1-2mm. For example 2mm. The convex portion 430U protruding from the back plate 308 can be used to assist the positioning of the opposite sides of the sputtering plate 118, and can reduce the damage caused by the impact of the back plate 308 during the sputtering process, and is easy to replace, thereby extending the life of the back plate 308. . In this embodiment, the safety ratio of the height H 'of the convex portion 430U to the height H2 of the sputtering plate 118 is further limited to 10% or less, in order to avoid the convex portion 430U and the rule above the sputtering plate 118 during the sputtering process. Collision.

第3A圖至第3D圖繪示根據第三實施例概念之濺射靶材的使用方法。3A to 3D illustrate a method of using a sputtering target according to the concept of the third embodiment.

請參照第3A圖,此實施例中,背板408具有一個凹口408A,凹口408A從背板408的上表面408S向內部凹入。Referring to FIG. 3A, in this embodiment, the back plate 408 has a notch 408A, and the notch 408A is recessed from the upper surface 408S of the back plate 408 to the inside.

請參照第3B圖及第3C圖,其中第3C圖是沿第3B圖所示之IJ線剖面後的示意圖。背板408的結構與配置保護單元426的方法可類似參照第1A~2A圖所述的揭露內容,於此不再贅述。此實施例中,兩個保護單元426之間更配置有至少一個中間保護單元526,即一個中間保護單元526連接兩個保護單元426。此實施例中,中間保護單元526之寬度W3以不超過背板408之寬度W且不小於濺射板118之寬度W2(如第3D圖所示)為基準,保護單元526包括第一保護部530與第二保護部532,其中第一保護部530具有凸部530U,凸部530U是凸出於背板408的上表面408S,兩個第一保護部530的凸部530U之高度H''低於濺射板118的高度H2,並與濺射板118並列。詳細舉例來說,濺射板118具有濺射板側面118W。一實施例中,濺射板側面118W高度約為20mm,凸部530U之高度H''為0.1-2mm,例如2mm。Please refer to FIG. 3B and FIG. 3C, where FIG. 3C is a schematic diagram after cross-section taken along line IJ shown in FIG. 3B. The structure of the back plate 408 and the method of configuring the protection unit 426 can be similarly disclosed with reference to FIGS. 1A to 2A, and will not be repeated here. In this embodiment, at least one intermediate protection unit 526 is further disposed between the two protection units 426, that is, one intermediate protection unit 526 is connected to the two protection units 426. In this embodiment, the width W3 of the intermediate protection unit 526 is based on the width W2 of the back plate 408 and not less than the width W2 of the sputtering plate 118 (as shown in FIG. 3D). The protection unit 526 includes a first protection portion. 530 and a second protection portion 532, where the first protection portion 530 has a convex portion 530U, the convex portion 530U is protruding from the upper surface 408S of the back plate 408, and the height H of the convex portions 530U of the two first protection portions 530 '' It is lower than the height H2 of the sputtering plate 118 and is juxtaposed with the sputtering plate 118. For example, the sputtering plate 118 has a sputtering plate side 118W. In one embodiment, the height of the side 118W of the sputtering plate is about 20 mm, and the height H ″ of the convex portion 530U is 0.1-2 mm, for example, 2 mm.

一實施例中,兩個第一保護部530的凸部530U之高度H''分別與相鄰之保護單元426的凸部430U之高度H'等高,保護單元526之第二保護部532之高度H3亦與保護單元426之高度H等高,使保護單元426、中間保護單元526共同界定保護部容置空間540。In an embodiment, the heights H ″ of the convex portions 530U of the two first protection portions 530 are equal to the heights H ′ of the convex portions 430U of the adjacent protection units 426, respectively. The height H3 is also equal to the height H of the protection unit 426, so that the protection unit 426 and the intermediate protection unit 526 jointly define the protection unit accommodation space 540.

請搭配參照第3B、3D圖,在本實施例中,第二保護部532之寬度W4等於或稍大於濺射板118之寬度W2,而可使第一保護部530的凸部530U抵接濺射板118之側面。Please refer to FIGS. 3B and 3D. In this embodiment, the width W4 of the second protection portion 532 is equal to or slightly larger than the width W2 of the sputtering plate 118, so that the convex portion 530U of the first protection portion 530 can abut the splash. The side of the shooting plate 118.

請參照第3D圖,配置濺射板118至背板408上,並對應置入由保護單元426、中間保護單元526所形成的保護部容置空間540中,更可利用接合件(未繪示)將濺射板118固定至背板408上,從而組裝完成濺射靶材520,使保護單元426、中間保護單元526圍繞濺射板118之所有濺射板邊緣118E,可藉由凸部430U、530U輔助濺射板118定位於保護部容置空間540中,並使第二保護部332、532實質對應承接濺射板118之底部。Referring to FIG. 3D, the sputtering plate 118 is disposed on the back plate 408, and is correspondingly placed in the protection portion accommodating space 540 formed by the protection unit 426 and the intermediate protection unit 526. Further, a bonding member (not shown) ) The sputtering plate 118 is fixed to the back plate 408, so that the sputtering target 520 is assembled, so that the protection unit 426 and the intermediate protection unit 526 surround all the sputtering plate edges 118E of the sputtering plate 118, and the convex portion 430U can be used. The 530U auxiliary sputtering plate 118 is positioned in the protection portion accommodating space 540, and the second protection portions 332, 532 substantially correspond to the bottom of the sputtering plate 118.

一實施例中,中間保護單元526之數量或中間保護單元526之長度L3係依背板408之長度L1及濺射板18之長度L2而定,此實施例中,濺射板118之長度L2約為2650mm、背板408之長度L1約為3000mm,中間保護單元526之長度L3則約為90mm至3000mm,中間保護單元526之配置數量亦可視中間保護單元526之長度L3而作適當的增減調整。In one embodiment, the number of the intermediate protection units 526 or the length L3 of the intermediate protection units 526 depends on the length L1 of the back plate 408 and the length L2 of the sputtering plate 18. In this embodiment, the length L2 of the sputtering plate 118 Approximately 2650mm, the length L1 of the back plate 408 is approximately 3000mm, the length L3 of the intermediate protection unit 526 is approximately 90mm to 3000mm, and the number of the configuration of the intermediate protection unit 526 can also be appropriately increased or decreased depending on the length L3 of the intermediate protection unit 526 Adjustment.

一實施例中,中間保護單元526之長度L3約佔背板408長度L1的3%至100%,。一實施例中,中間保護單元526其露出凹口408A的上表面526S總面積約佔背板408的上表面408S總面積之6%~90%。藉由保護單元426、中間保護單元526共同防止背板408在濺射製程中被濺射消耗而損壞的問題產生,以進一步延長背板408的使用壽命,且安裝及更換中間保護單元526的方法如前一實施例一樣簡單、快速。In one embodiment, the length L3 of the intermediate protection unit 526 accounts for about 3% to 100% of the length L1 of the back plate 408. In one embodiment, the total area of the upper surface 526S of the intermediate protection unit 526 exposed from the notch 408A accounts for about 6% to 90% of the total area of the upper surface 408S of the back plate 408. The protection unit 426 and the intermediate protection unit 526 jointly prevent the problem that the back plate 408 is damaged due to sputtering consumption during the sputtering process, in order to further extend the service life of the back plate 408, and the method of installing and replacing the middle protection unit 526 As simple and fast as the previous embodiment.

須特別說明的是,中間保護單元526及其兩側之保護單元426亦可為一體成型之構造而界定保護部容置空間540,一體成型之保護單元(未繪示)之長度則介於背板408之長度L1與濺鍍板118之長度L2之間,約為2650mm-3000mm,即以不大於背板408之長度L1為準。一體成型之保護單元(未繪示)之長度約佔背板408長度L1的88%至100%,例如90%。It should be particularly noted that the intermediate protection unit 526 and the protection units 426 on both sides thereof may also define the protection space 540 for the integral structure, and the length of the integral protection unit (not shown) is between the back The length L1 of the plate 408 and the length L2 of the sputtering plate 118 are about 2650mm-3000mm, that is, no longer than the length L1 of the back plate 408. The length of the integrated protection unit (not shown) accounts for about 88% to 100% of the length L1 of the back plate 408, for example, 90%.

因此,根據本揭露概念的濺射靶材亦可視實際需求任意調變結構設計。例如,保護單元可依據濺射靶材實際在濺鍍腔室中進行濺鍍製程時,背板可能被濺射消耗分佈適當調整配置,如上述第三實施例所示,中間保護單元之數量可為3個、4個、或更多個,係配合背板或濺射版之長度做適當調整,或配置在濺射板的其它位置,或具有其它形狀及尺寸。Therefore, the sputtering target according to the concept of the present disclosure can also be arbitrarily adjusted in structural design according to actual needs. For example, the protection unit may be appropriately adjusted and configured according to the sputtering consumption distribution when the sputtering process is actually performed in the sputtering chamber according to the sputtering target. As shown in the third embodiment, the number of intermediate protection units may be adjusted. For three, four, or more, it is adjusted according to the length of the back plate or the sputtering plate, or it is arranged at other positions on the sputtering plate, or has other shapes and sizes.

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

308、408‧‧‧背板308, 408‧‧‧ backplane

308A、408A‧‧‧凹口308A, 408A‧‧‧notch

308S、326S、408S、526S‧‧‧上表面308S, 326S, 408S, 526S‧‧‧upper surface

118‧‧‧濺射板118‧‧‧Sputtered Plate

118E‧‧‧濺射板邊緣118E‧‧‧Edge of sputtering plate

118W‧‧‧濺射板側面118W‧‧‧Side of sputter plate

118S‧‧‧濺射表面118S‧‧‧Sputtered surface

320、420、520‧‧‧濺射靶材320, 420, 520‧‧‧ sputtering targets

326、426‧‧‧保護單元326, 426‧‧‧ Protection Unit

330、430、530‧‧‧第一保護部330, 430, 530‧‧‧ First Protection Department

332、532‧‧‧第二保護部332, 532‧‧‧Second Protection Department

526‧‧‧中間保護單元526‧‧‧Intermediate protection unit

540‧‧‧保護部容置空間540‧‧‧Protection space

430U、530U‧‧‧凸部430U, 530U‧‧‧ convex

430W‧‧‧保護部側面430W‧‧‧side of protection

W、W1、W2、W3‧‧‧寬度W, W1, W2, W3‧‧‧Width

L、L1、L2、L3‧‧‧寬度L, L1, L2, L3‧‧‧Width

H、H'、H''、H1、H2、H3‧‧‧高度H, H ', H' ', H1, H2, H3 ‧‧‧ height

第1A圖至第1D圖繪示根據第一實施例概念之濺射靶材的使用方法。 第2A圖至第2C圖繪示根據第二實施例概念之濺射靶材的使用方法。 第3A圖至第3D圖繪示根據第三實施例概念之濺射靶材的使用方法。1A to 1D illustrate a method of using a sputtering target according to the concept of the first embodiment. 2A to 2C illustrate a method of using a sputtering target according to the concept of the second embodiment. 3A to 3D illustrate a method of using a sputtering target according to the concept of the third embodiment.

Claims (10)

一種濺射靶材,包括:一背板,具有一上表面;一濺射板,設置在該上表面上,並具有一濺射板邊緣以及一底表面;以及一保護單元,設置在該上表面上,相鄰該濺射板邊緣並具有一上表面,其中在垂直該背板之該上表面的方向上,該濺射板之該底表面直接接觸該保護單元之該上表面。A sputtering target material includes: a back plate having an upper surface; a sputtering plate provided on the upper surface and having a sputtering plate edge and a bottom surface; and a protection unit provided on the upper surface On the surface, there is an upper surface adjacent to the edge of the sputtering plate, wherein the bottom surface of the sputtering plate directly contacts the upper surface of the protection unit in a direction perpendicular to the upper surface of the back plate. 如申請專利範圍第1項所述之濺射靶材,其中該上表面具有至少一凹口,該保護單元是可卸除地設置在該至少一凹口中。The sputtering target as described in item 1 of the patent application range, wherein the upper surface has at least one notch, and the protection unit is detachably disposed in the at least one notch. 如申請專利範圍第2項所述之濺射靶材,其中該背板具有二該凹口,該二凹口係彼此隔開地配置在該背板之該上表面上,該二凹口分別對應該濺射板的相對兩側,該二凹口個別設有該保護單元。The sputtering target as described in item 2 of the patent application scope, wherein the back plate has two notches, the two notches are arranged on the upper surface of the back plate spaced apart from each other, the two notches are respectively Corresponding to the opposite sides of the sputtering plate, the two notches are individually provided with the protection unit. 如申請專利範圍第1項所述之濺鍍靶材,其中該濺射板的材質係金屬或氧化物,或該背板的材質係金屬。The sputtering target material as described in item 1 of the patent application scope, wherein the material of the sputtering plate is metal or oxide, or the material of the back plate is metal. 如申請專利範圍第1項所述之濺射靶材,其中該保護單元滿足至少一項選自下列(1)~(10)之結構特徵:(1)該保護單元的材質係為金屬;(2)該保護單元之高度介於0.1mm至4mm;(3)該保護單元之寬度介於90mm至190mm;(4)該保護單元之長度介於90mm至3000mm;(5)該保護單元之寬度不小於該濺射板之寬度且不大於該背板之寬度;(6)該保護單元之長度不大於該背板之長度;(7)該保護單元之高度佔該背板之高度的0.5%至20%;(8)該保護單元之寬度佔該背板之寬度的47%至100%;(9)該保護單元之長度佔該背板之長度的3%至100%;(10)該保護單元有一保護部側面,該濺射板具有一濺射側面,該濺射側面與該保護部側面互相面對或直接接觸,並具有互補的形狀。The sputtering target as described in item 1 of the patent application scope, wherein the protection unit satisfies at least one structural feature selected from the following (1) to (10): (1) The material of the protection unit is metal; ( 2) The height of the protection unit is between 0.1mm and 4mm; (3) The width of the protection unit is between 90mm and 190mm; (4) The length of the protection unit is between 90mm and 3000mm; (5) The width of the protection unit Not less than the width of the sputtering plate and not more than the width of the back plate; (6) the length of the protection unit is not more than the length of the back plate; (7) the height of the protection unit accounts for 0.5% of the height of the back plate To 20%; (8) the width of the protection unit accounts for 47% to 100% of the width of the backplane; (9) the length of the protection unit accounts for 3% to 100% of the length of the backplane; (10) the The protection unit has a protection part side, and the sputtering plate has a sputtering side, the sputtering side and the protection part side face or directly contact each other, and have complementary shapes. 如申請專利範圍第1項所述之濺射靶材,其中該保護單元包括一第一保護部及一第二保護部,該第一保護部或該第二保護部滿足至少一項選自下列(1)~(3)之結構特徵:(1)該第一保護部露出於該濺射板,該第二保護部乘載該濺射板並與該濺射板重疊;(2)該第一保護部與該第二保護部相連接;(3)該第一保護部具有一凸部,該凸部凸出於該背板且並列該濺射板,或該凸部的高度低於該濺射板的高度。The sputtering target as described in item 1 of the patent scope, wherein the protection unit includes a first protection part and a second protection part, the first protection part or the second protection part satisfying at least one selected from the following (1)~(3) Structural features: (1) The first protection part is exposed to the sputtering plate, and the second protection part rides on and overlaps the sputtering plate; (2) The first A protection part is connected to the second protection part; (3) the first protection part has a convex part, the convex part protrudes from the back plate and juxtaposes the sputtering plate, or the height of the convex part is lower than the The height of the sputtering plate. 如申請專利範圍第1項所述之濺射靶材,更包括一固定件,用以將該保護單元固定至該背板,其中該固定件包括螺絲、插栓、或黏著劑。The sputtering target described in item 1 of the patent application further includes a fixing member for fixing the protection unit to the backplane, wherein the fixing member includes screws, plugs, or adhesive. 如申請專利範圍第1項所述之濺射靶材,更包含一中間保護單元,其中該中間保護單元包括一第一保護部及一第二保護部,該中間保護單元滿足至少一項選自下列(1)~(7)之結構特徵:(1)該中間保護單元置於該兩保護單元之間;(2)該第一保護部露出於該濺射板,該第二保護部乘載該濺射板並與該濺射板重疊;(2)該第一保護部與該第二保護部相連接;(4)該第一保護部具有一凸部,該凸部凸出於該背板且並列該濺射板,或該凸部的高度低於該濺射板的高度;(5)該第二保護部之寬度等於或稍大於該濺射板之寬度;(6)該中間保護單元之長度佔該背板之長度的3%至100%;(7)該中間保護單元是可卸除地設置在該背板上。The sputtering target described in item 1 of the patent application scope further includes an intermediate protection unit, wherein the intermediate protection unit includes a first protection part and a second protection part, and the intermediate protection unit satisfies at least one item selected from The following structural features of (1) to (7): (1) The intermediate protection unit is placed between the two protection units; (2) The first protection part is exposed to the sputtering plate, and the second protection part is carried The sputtering plate overlaps with the sputtering plate; (2) The first protection portion is connected to the second protection portion; (4) The first protection portion has a convex portion, the convex portion protruding from the back Plate and the sputter plate in parallel, or the height of the convex portion is lower than the height of the sputter plate; (5) the width of the second protection portion is equal to or slightly larger than the width of the sputter plate; (6) the intermediate protection The length of the unit accounts for 3% to 100% of the length of the backplane; (7) The intermediate protection unit is detachably provided on the backplane. 一種濺射靶材的使用方法,包括提供一如申請專利範圍第1~8項任一項所述之濺射靶材,其中該保護單元是可卸除地設置在該背板上。A method for using a sputtering target includes providing the sputtering target as described in any one of items 1 to 8 of the patent application range, wherein the protection unit is detachably provided on the back plate. 如申請專利範圍第9項所述之濺射靶材的使用方法,更包括當該保護單元被濺鍍消耗後,將該保護單元移出該背板。The method of using a sputtering target as described in item 9 of the scope of the patent application further includes removing the protection unit from the back plate after the protection unit is consumed by sputtering.
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