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TWI656582B - Semiconductor device mounting method and mounting device - Google Patents

Semiconductor device mounting method and mounting device Download PDF

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Publication number
TWI656582B
TWI656582B TW104100526A TW104100526A TWI656582B TW I656582 B TWI656582 B TW I656582B TW 104100526 A TW104100526 A TW 104100526A TW 104100526 A TW104100526 A TW 104100526A TW I656582 B TWI656582 B TW I656582B
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Taiwan
Prior art keywords
substrate
heat conduction
thermosetting resin
semiconductor device
conduction delay
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TW104100526A
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TW201532161A (zh
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朝日昇
宮本芳範
竹上敏史
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日商東麗工程股份有限公司
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Publication of TW201532161A publication Critical patent/TW201532161A/zh
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Publication of TWI656582B publication Critical patent/TWI656582B/zh

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  • Engineering & Computer Science (AREA)
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Abstract

利用加熱器將保持台加熱成熱硬化性樹脂的硬化溫度以上。於該保持台上隔著熱傳導延遲用板將藉由熱硬化性樹脂暫壓接有半導體裝置的基板載置保持。之後，一邊藉由壓接頭加壓正被加熱的半導體裝置，一邊使凸塊與基板的電極接觸，並且藉由使熱硬化性樹脂硬化而將半導體裝置正式壓接於基板。

Description

半導體裝置的安裝方法及安裝裝置
本發明係有關一種在撓性基板、玻璃環氧基板、玻璃基板、陶瓷基板、矽中介層、矽基板等之電路基板上接著、直接電氣接合或按疊層狀態安裝IC、LSI等半導體裝置之半導體裝置的安裝方法及安裝裝置。
伴隨著半導體裝置的小型化與高密度化，在將半導體晶片安裝於電路基板的方法方面，倒裝式晶片安裝、甚至是基於貫通晶片的貫通電極之3次元疊層的3次元疊層安裝係迅速擴大。在用以確保半導體晶片的接合部分之連接可靠性的方法方面，一般係採用在將形成於半導體晶片上的凸塊與電路基板的電極墊接合後，將液狀密封接著劑注入半導體晶片與電路基板之間隙使之硬化方法。
又，近年，提案一種將預先形成有接著劑之帶有凸塊的半導體晶片、基板倒裝連接而同時進行電氣接合與樹脂密封之方法。例如，在從下模被賦予朝上的彈推力而自該下模疏離的基板保持板上隔著絕緣接著劑而載置暫時安裝著半導體裝置之基板，使內建加熱器的上模與該基板近接對向。於此狀態下藉由來自於上模的輻射熱將基板預熱後，使該上模下降而將半導體裝置一邊按壓及加熱一邊使之固定於基板(參照專利文獻1)。
先行技術文獻
專利文獻1 特開2011-159847號公報
然而，在將半導體裝置推入於被以自下模疏離狀態保持的基板上的絕緣接著劑之情況，由於來自於上模的熱會先傳導，故因絕緣接著劑的種類而異，在基板到達下模並被支持的狀態下被開始加壓前，該絕緣接著劑會硬化。其結果，發生所謂絕緣接著劑在凸塊到達基板的電極前硬化而無法確保電氣連接之問題。
又，在使上模下降速度加快之情況，產生所謂半導體裝置破裂，或絕緣接著劑自基板突出之問題。再者，在安裝具有與基板電極連接用的銲料之半導體裝置的情況，基於下模之加熱的時序變慢而難以使銲料充分熔融。為解決此問題，當升高加熱溫度時安裝時間內的峰值溫度比設置溫度還上昇，亦會產生所謂使基板翹曲或裝置的使用構件之耐久性劣化的問題。
本發明係有鑒於此種事態而作成者，主要目的在於提供一種可短時間且精度佳地將半導體裝置安裝於基板上之半導體裝置的安裝方法及安裝裝置。
又，本發明為達成此種目的，採取如次之構成。
亦即，一種安裝方法，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝方法，其特徵為：在保持台與前述半導體裝置之間介設有熱傳導延遲用板之狀態下，藉由第1加熱器用熱硬化性樹脂的硬化溫度以上的溫度一邊加熱前述保持台，一邊藉由按壓構件加壓該半導體裝置使凸塊與基板的電極連接並使熱硬化性樹脂硬化而正式壓接於基板。
依據此方法，藉由使熱傳導延遲用板介設在保持台與基板之間，可使從保持台傳導到基板的熱延遲。因此，可抑制在將熱傳導延遲用板及基板載置保持於保持台後並藉由按壓構件加壓半導體裝置之前讓熱硬化性樹脂硬化的情形。其結果，可在將半導體裝置的凸塊與基板的電極確實連接之後，使熱硬化性樹脂硬化並正式壓接(固定)於基板。
又，藉由將保持台設在熱硬化性樹脂的硬化溫度以上，可考慮基於熱傳導延遲用板的熱傳導而使傳導到基板的溫度配合物性的硬化溫度、或調整延遲時間。
此外，上述方法中，熱傳導延遲用板亦可如以下介設在保持台與基板之間。
例如，將熱傳導延遲用板搬運至藉由第1加熱器加熱的保持台上之後，將藉未硬化狀態的前述熱硬化性樹脂而暫壓接有半導體裝置的基板搬運至熱傳導延遲用板上。
在其他實施形態方面，將藉未硬化狀態的前 述熱硬化性樹脂而暫壓接有半導體裝置的基板與熱傳導延遲用板重疊地搬運亦可。
此外，基板與熱傳導延遲用板之重疊，例如可以是僅重疊。或者，亦可為將基板與熱傳導延遲用板藉由雙面黏著帶或接著劑等預先貼合狀態。
本方法中，以藉由具備第2加熱器的按壓構件將半導體裝置加壓及加熱較佳。
上述方法中，在凸塊設有銲料的情況，正式壓接過程係以在熱硬化性樹脂硬化前使凸塊的銲料熔融接著於基板的電極之方式進行溫度設定較佳。
依據此方法，可使基板的電極與凸塊確實地電氣連接。
又，上述方法中，係以從保持台搬出正式壓接處理後的基板後並將新處理對象的基板載置於熱傳導延遲用板之前冷卻前述熱傳導延遲用板較佳。
於進行熱傳導延遲用板之再利用的情況，可避免將新處理對象的基板載置於前述熱傳導延遲用板時，因前次處理時積存在熱傳導延遲用板上的餘熱而使熱硬化性樹脂硬化。
又，本發明為達成此種目的，採取如次之構成。
亦即，一種安裝裝置，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝裝置，其特徵為具備：保持台；第1加熱器，加熱前述保持台；搬運機構，將熱傳導延遲用板搬運至前述保持台後，將藉 未硬化狀態的前述熱硬化性樹脂而暫壓接有半導體裝置的基板搬運至該熱傳導延遲用板上；壓接機構，藉由按壓構件對在前述保持台上按熱傳導延遲用板及基板的順序被載置保持之該基板上的半導體裝置進行按壓；及控制部，藉由前述第1加熱器將保持台的溫度控制在熱硬化性樹脂的硬化溫度以上。
依據此構成，藉由搬運機構使熱傳導延遲用板被載置保持於處在加熱狀態的保持台上，而前述熱傳導延遲用板上載置保持有基板。因此，從保持台朝向基板之熱傳導係因為熱傳導延遲用板而被延遲。亦即，該構成可適當地實施上述方法。
在其他實施形態方面，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝裝置，其特徵為具備：保持台；第1加熱器，加熱前述保持台；搬運機構，將藉未硬化狀態的前述熱硬化性樹脂而暫壓接有半導體裝置的基板與熱傳導延遲用板重疊地搬運；壓接機構，藉由按壓構件對被載置保持於前述保持台上的基板之半導體裝置進行按壓；及控制部，藉由前述第1加熱器將保持台的溫度控制在熱硬化性樹脂的硬化溫度以上。
依據此構成，由於是在保持台與基板之間介設有熱傳導延遲用板之狀態下被保持於保持台，故從保持台朝基板之熱傳導係因為熱傳導延遲用板而被延遲。亦即，該構成可適當地實施上述方法。
又，由於能將基板與熱傳導延遲用板一體地搬運，故在基板是半導體晶圓的情況，可補強被薄化之該半導體晶圓。因此，可抑制在搬運過程基板撓曲使該基板上的半導體裝置破損之情形。又，比起將熱傳導延遲用板與基板個別地搬運係更可縮短處理時間。
上述各構成中，按壓構件係具備第2加熱器，以控制部係藉由第2加熱器將按壓構件的溫度控制在熱硬化性樹脂的硬化溫度以上者較佳。
依據此構成，可在隔著熱傳導延遲用板而藉由保持台與按壓構件將基板夾入的狀態下進行加壓及加熱。因此，可短時間調整朝基板上的熱硬化性樹脂之熱傳導的延遲時間。
再者，上述構成中，以具備將加熱後的熱傳導延遲用板冷卻之冷卻器者較佳。
依據此構成，於進行熱傳導延遲用板之再利用的情況，可除去積存在該熱傳導延遲用板上的餘熱。因此，可避免在基板上加壓半導體裝置之前因餘熱導致熱硬化性樹脂之硬化。
依據本發明之半導體裝置的安裝方法及安裝裝置，可抑制在對被載置保持於經加熱的保持台上之基板上的半導體裝置進行加壓之前發生熱硬化性樹脂硬化之情形。亦即，可在將基板與凸塊確實電氣連接之狀態使熱硬化性樹脂高速硬化並固定於基板。
1‧‧‧搬運機構
2‧‧‧正式壓接裝置
3‧‧‧可動台
4‧‧‧搬運臂
5‧‧‧導軌
6‧‧‧保持框
7‧‧‧卡扣爪
8‧‧‧可動台
9‧‧‧按壓機構
10‧‧‧保持台
11‧‧‧加熱器
13‧‧‧缸體
14‧‧‧壓接頭
15‧‧‧加熱器
20‧‧‧控制部
21‧‧‧操作部
W‧‧‧基板
C‧‧‧半導體裝置
G‧‧‧熱硬化性樹脂
P‧‧‧熱傳導延遲用板
圖1係顯示構成安裝裝置之正式壓接裝置的概略整體構成之立體圖。
圖2係搬運機構的平面圖。
圖3係搬運機構的前視圖。
圖4係顯示實施例裝置的一輪動作之流程。
圖5係顯示熱傳導延遲用板及基板的搬運動作之前視圖。
圖6係顯示將半導體裝置正式壓接於顯示基板的動作圖。
圖7係顯示將半導體裝置正式壓接於基板的動作圖。
圖8係顯示將半導體裝置正式壓接於基板時的溫度分佈圖。
圖9係變形例裝置的立體圖。
圖10係變形例之帶有熱傳導延遲用板的基板之部分剖面圖。
圖11係顯示將變形例之帶有熱傳導延遲用板的基板正式壓接的動作圖。
以下，參照圖面並說明本發明的一實施例。
本實施例中，係以使用作為熱硬化性樹脂之NCP(非導電性接著膠；Non-Conductive Paste)、NCF(非導電性接著劑薄膜；Non-Conductive Film)等將半導體裝 置安裝於基板之情況為例作說明。又，關於本發明的安裝方法，熱硬化性樹脂係NCF(非導電性接著劑薄膜)者較佳。
此外，本發明中的「半導體裝置」方面，例如為具有IC晶片、半導體晶片、光元件、表面安裝零件、晶片、晶圓、TCP(Tape Carrier Package；帶狀承載封裝件)、FPC(Flexible Printed Circuit；可撓性印刷電路)等凸塊者。又，此等半導體裝置無關乎種類或大小，顯示與基板接合之側的全部的形態。例如使用朝向平面顯示面板的屬晶片接合的COG(Chip On Glass；晶片玻璃板接合)、TCP，及屬FPC之接合的OLB(Outer Lead Bonding；外引腳接合)等。
又，本發明中的「基板」係指例如使用撓性基板、玻璃環氧基板、玻璃基板、陶瓷基板、矽中介層、矽基板等。
首先，針對本實施例所使用的裝置，參照圖面作具體說明。圖1係顯示構成本發明的安裝裝置之正式壓接裝置的概略構成之立體圖，圖2係顯示安裝裝置的要部構成之平面圖，圖3係顯示安裝裝置的要部構成之前視圖。
如圖1及圖2所示，本發明中的安裝裝置係由搬運機構1及正式壓接裝置2所構成。以下，針對各構成作詳述。
搬運機構1備有可動台3及搬運臂4。可動 台3係建構成沿著導軌5在水平軸方向移動。
搬運臂4係建構成基端側被連結於可動台3的昇降驅動機構，且在上下(Z)方向及繞Z軸(θ)方向分別移動自如。又，搬運臂4在前端備有保持框6。如圖2及圖3所示，保持框6係呈馬蹄形，在角部備有複數個卡扣爪7，用以卡扣熱傳導延遲用板及基板W。
正式壓接裝置2係由可動台8及按壓機構9等所構成。
可動台8具備將基板W吸附保持之保持台10。保持台10係建構成在水平2軸(X，Y)方向、上下(Z)方向及繞Z軸(θ)方向分別移動自如。此外，保持台10的外形係設定成收納於保持框6的內側之尺寸。又，保持台10係內部埋設有加熱器11。此外，加熱器11係相當於本發明的第1加熱器。
按壓機構9係由缸體13及壓接頭14等所構成。亦即，建構成壓接頭14的上方連結著缸體13，壓接頭14上下地移動。壓接頭14係下凸狀且沿著在基板W的端緣側排列配置之複數個半導體裝置C的排列方向延伸。亦即建構成藉由凸部前端將複數個半導體裝置C同時加壓。又，在壓接頭14埋設有加熱器15。此外，壓接頭14相當於本發明的按壓構件，加熱器15相當於第2加熱器。
控制部20係以壓接頭14的加熱器15及保持台10的加熱器11的溫度維持和使熱硬化性樹脂G硬化 的溫度同等或其以上的溫度之方式控制著各加熱器11、15的溫度。
其次針對使用上述實施例裝置將半導體裝置C正式壓接於該基板W的一輪之動作，一邊參照圖4所示之流程及圖5至圖8一邊作說明。此外，本實施例中，對於被以在前工程之暫壓接工程中藉NCF使複數個半導體裝置C預先暫壓接於基板W之狀態進行搬運者，係以使熱硬化性樹脂完全硬化而進行正式壓接的情況為例作說明。
首先，對操作部21進行操作以設定保持台10及壓接頭14所具備的兩加熱器11、15之溫度。此處，兩加熱器11、15的溫度係設定成熱傳導延遲用板P與基板W的界面及壓接頭14與半導體裝置C的界面之溫度比熱硬化性樹脂G的硬化溫度還高。亦即，設定成在被保持台10所吸附保持之基板W到達壓接頭14下側的安裝位置之時點，經由半導體裝置C及熱傳導延遲用板P而傳導至熱硬化性樹脂G的熱會成為硬化溫度(步驟S1)。
又，本實施例中，熱傳導延遲用板P係使用不鏽鋼。此處，熱傳導延遲用板P係被設定成例如，熱傳導率(W/m‧K)L與熱傳導延遲用板的厚度(mm)T之關係，亦即L/T成為1以上且20以下。此外，熱傳導延遲用板P不限定為不鏽鋼，只要是不因壓接頭14之按壓而變形的材質即可，亦可為金屬、陶瓷、碳及多孔質材等。
當初期設定完了時讓裝置作動(步驟S2)。在 正式壓接裝置側，控制部20開啟加熱器11、15以使初期設定的溫度成為一定的方式開始溫度控制。
如圖5所示，藉由配備在暫壓接工程側之未圖示的搬運機器人使熱傳導延遲用板P載置於搬運機構1的保持框6，之後在該熱傳導延遲用板P上載置基板W(步驟S3)。
熱傳導延遲用板P與基板W在重疊的狀態被搬往正式壓接裝置2。使此熱傳導延遲用板P面下而基板W係如圖5的二點鏈線所示，被移載於保持台10。熱傳導延遲用板P係形成有複數個貫通孔，藉由貫通孔而被吸附保持於保持台10(步驟S4)。又，保持台10係藉由未圖示的驅動機構而移往前方(圖1的Y方向)之壓接頭14下方的預先決定的安裝位置。
從熱傳導延遲用板P及基板W被吸附保持於保持台10的時點藉由加熱器11開始加熱(步驟S5)。
當保持台10到達安裝位置時，如圖6所示，壓接頭14依缸體13之作動而下降，複數個半導體裝置C被同時地夾入。此時，半導體裝置C係被加熱的壓接頭14一邊加熱一邊按壓(步驟S6)。
亦即，壓接頭14下降到既定高度時，由於熱硬化性樹脂G處在未硬化狀態，故如圖7所示，半導體裝置C的凸塊B是依壓接頭14之加壓而被推入熱硬化性樹脂G。亦即，在半導體裝置C的凸塊B到達基板W的電極後，熱硬化性樹脂硬化。
當對半導體裝置C加壓及加熱迄至熱硬化性 樹脂G完全硬化的既定時間時(步驟S7)，使壓接頭14返回上方的待機位置且解除加壓，並藉由搬運機構1將熱傳導延遲用板P與基板W搬出(步驟S8)。
將熱傳導延遲用板P與基板W搬運到既定位置後，係交付於其他搬運機器人或收納於自動倉儲。
以上結束在1片基板2上的半導體裝置之安裝。之後，針對既定片數的基板反覆相同動作。
依據此構成，由於是將熱傳導延遲用板P載置於被維持在熱硬化性樹脂G的硬化溫度以上之保持台上之後再將已暫壓接有半導體裝置C的基板W吸附保持，故在壓接頭14下降迄至加壓，没有熱硬化性樹脂G被硬化的情形。亦即，本實施例中，如圖8的實線所示，從在保持台10上載置保持熱傳導延遲用板P與基板W之時點T1到使此壓接頭14抵接半導體裝置C並開始加壓的時點T2(例如，本實施例中設定成銲料熔融溫度之時點)為止的溫度梯度是比無介設熱傳導延遲用板P之以一點鏈線所示的習知方法的溫度梯度還小，可保持在比熱硬化性樹脂G的硬化溫度還低的溫度。換言之，因為迄至利用壓接頭14開始加壓半導體裝置C為止的溫度間隔比習知方法還大，故在壓接頭14下降到既定高度且使半導體裝置C的凸塊B到達基板W的電極之前，可將熱硬化性樹脂G保持在未硬化狀態。其結果，可使基板W的電極與凸塊B確實電氣連接。
此外，熱硬化性樹脂G的硬化溫度係可藉由DSC(differential scanning calorimetry；示差掃描熱分析) 測定。
本發明不限於上述實施例，亦可如以下變形實施。
(1)上述實施例裝置的壓接頭14亦可利用於將1個半導體裝置C正式壓接的單一型或，如圖9所示，具備複數個該單一型之複合型。
(2)上述實施例裝置中，雖將保持台10與壓接頭14所具備之各加熱器11、15的溫度設定成相同，但例如亦可如以下那樣進行溫度設定。例如，亦能以從利用壓接頭14開始加壓半導體裝置C的時點到經由該半導體裝置C傳熱至熱硬化性樹脂G的時間、與經由基板W及熱傳導延遲用板P傳熱至熱硬化性樹脂G的時間成為相同時序之方式，適宜地設定變更各加熱器11、15的溫度。
又，溫度傳導時間不僅是加熱器11、15之上述溫度設定，亦能以熱傳導延遲用板P的厚度作調整。依據此方法，可抑制因基板W與半導體裝置C的熱傳導之差所產生之基板W的翹曲。
(3)在半導體裝置的凸塊B是形成銲在銲料球或銅電極柱的構成之情況，只要以依加壓而被推入於熱硬化性樹脂G的凸塊是與基板W的電極接觸，且從接觸狀態到銲料熔融接著為止的時間，熱硬化性樹脂G成為未硬化狀態之方式進行溫度控制即可。
(4)上述實施例裝置中，係建構成保持台10 能依可動台8而移動，但亦可為被固定之構成。在此情況，只要是在要藉由保持框6搬運熱傳導延遲用板P與基板W的時點保持對準即可。又，熱傳導延遲用板P亦可為固定於保持框6或構成一體。因此，本發明中，由於只要在保持台6上按熱傳導延遲用板P、基板W的順序重疊地保持即可，故各個搬運之時序亦可同時，熱傳導延遲用板P亦可比基板W還先載置於保持台10。
(5)上述實施例裝置中，係使用1片基板W，但亦可使用複數片基板W相連之切割前的基板W。在此情況，只要在與切割前的基板W對應之尺寸的熱傳導延遲用板上載置該複數片份的基板W，使之依基板單位在壓接頭的下方一邊變位一邊正式壓接即可。
(6)上述實施例中，是將熱傳導延遲用板P與基板W同時載置於保持台10，但亦可個別地搬運及載置。在此情況，於保持台10載置熱傳導延遲用板P後載置基板W。
(7)上述實施例中，於進行熱傳導延遲用板P之再利用的情況，從正式壓接處理後將新基板W載置於熱傳導延遲用板P上之前將熱傳導延遲用板P藉由冷卻器冷卻亦可。冷卻器方面，例如亦可為利用噴嘴噴吹空氣之構成。
(8)上述實施例中，如圖10及圖11所示，熱傳導延遲用板P亦可藉由黏著劑預先貼附於基板W。熱傳導延遲用板P的尺寸亦可與基板W同形狀且相同大小 或基板以上的大小。在此情況，熱傳導延遲用板方面，例如適宜地選擇由玻璃、不鏽鋼或聚醯亞胺等所成形者。
依據此構成，在基板W是經背面研磨而薄化之半導體晶圓的情況，可補強剛性降低之基板W。亦即，可抑制基板W在搬運時該基板W撓曲使半導體裝置C破損。又，相較於上述實施例之處理係可減低朝保持台10進行搬運之次數。亦即，在圖4所示之步驟S3，僅將帶有熱傳導延遲用板的基板W搬運載置至保持台10一次即可。又，在步驟S8，於正式壓接後僅將帶有熱傳導延遲用板的基板W自保持台10搬出一次即可。因此，該實施形態可使處理速度提升。此外，帶有該熱傳導延遲用板的基板W之搬運係可利用上述搬運機構1，或藉由具有呈馬蹄形的機械腕(end effector)的搬運機器人一邊吸附熱傳導延遲用板P一邊搬運亦可。
又，本實施形態中，亦可作成將基板W與熱傳導延遲用板P單單是重疊的狀態下進行搬運。
此外，本實施形態中，亦可將從保持台10搬出的基板W及熱傳導延遲用板P冷卻。例如，亦可在搬運過程或既定位置對熱傳導延遲用板P噴吹空氣。
[產業上可利用性]
如以上所述，本發明係適合於進行使半導體裝置與基板的電極一邊精度佳地電氣連接一邊使熱硬化性樹脂硬化。

Claims (16)

  1. 一種安裝方法，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝方法，其特徵為，在保持台與前述半導體裝置之間介設有延遲來自前述保持台的熱之傳導的熱傳導延遲用板之狀態下，藉由第1加熱器以前述熱硬化性樹脂的硬化溫度以上的溫度一邊加熱前述保持台，一邊藉由按壓構件加壓前述半導體裝置，使前述凸塊與前述基板的電極連接並使熱硬化性樹脂硬化而正式壓接於前述基板。
  2. 如請求項1之安裝方法，其中具備：第1搬運過程，將前述熱傳導延遲用板搬運至藉由前述第1加熱器加熱的前述保持台上；及第2搬運過程，將藉未硬化狀態的前述熱硬化性樹脂暫壓接有前述半導體裝置的前述基板搬運至前述熱傳導延遲用板上。
  3. 如請求項1或2之安裝方法，其中，藉由具備第2加熱器的前述按壓構件將前述半導體裝置加壓及加熱。
  4. 如請求項3之安裝方法，其中，將前述按壓構件的設定溫度設為前述熱硬化性樹脂的硬化溫度以上而加熱前述熱硬化性樹脂。
  5. 如請求項1之安裝方法，其中，前述凸塊設有銲料，前述正式壓接過程係在前述熱硬化性樹脂硬化前使前述凸塊的銲料熔融接著於前述基板的電極。
  6. 如請求項1之安裝方法，其中，從前述保持台搬出前述正式壓接處理後的前述基板後，並在將新處理對象的前述基板載置於前述熱傳導延遲用板之前，冷卻前述熱傳導延遲用板。
  7. 如請求項1之安裝方法，其中，前述熱硬化性樹脂係非導電性接著劑薄膜。
  8. 如請求項1之安裝方法，其中，具備搬運過程，將藉未硬化狀態的前述熱硬化性樹脂暫壓接有前述半導體裝置的前述基板與前述熱傳導延遲用板重疊地搬運。
  9. 如請求項8之安裝方法，其中，藉由具備第2加熱器的前述按壓構件將前述半導體裝置加壓及加熱。
  10. 如請求項9之安裝方法，其中，將前述按壓構件的設定溫度設為前述熱硬化性樹脂的硬化溫度以上而加熱前述熱硬化性樹脂。
  11. 一種安裝裝置，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝裝置，其特徵為具備：保持台；第1加熱器，加熱前述保持台；搬運機構，將延遲來自前述保持台的熱之傳導的熱傳導延遲用板搬運至前述保持台後，將藉未硬化狀態的前述熱硬化性樹脂暫壓接有半導體裝置的基板搬運至前述熱傳導延遲用板上；壓接機構，藉由按壓構件對按前述熱傳導延遲用 板及基板的順序被載置保持在前述保持台上之該基板上的半導體裝置進行按壓；及控制部，藉由前述第1加熱器將前述保持台的溫度控制在熱硬化性樹脂的硬化溫度以上。
  12. 如請求項11之安裝裝置，其中前述按壓構件具備第2加熱器，前述控制部係藉由第2加熱器將按壓構件的溫度控制在熱硬化性樹脂的硬化溫度以上。
  13. 如請求項11或12之安裝裝置，其中具備將加熱後的前述熱傳導延遲用板冷卻之冷卻器。
  14. 一種安裝裝置，係隔著熱硬化性樹脂將具有凸塊的半導體裝置安裝於基板的安裝裝置，其特徵為具備：保持台；第1加熱器，加熱前述保持台；搬運機構，將藉未硬化狀態的前述熱硬化性樹脂暫壓接有半導體裝置的前述基板與延遲來自前述保持台的熱之傳導的熱傳導延遲用板重疊地搬運；壓接機構，藉由按壓構件對被載置保持於前述保持台上的前述基板之前述半導體裝置進行按壓；及控制部，藉由前述第1加熱器將前述保持台的溫度控制在前述熱硬化性樹脂的硬化溫度以上。
  15. 如請求項14之安裝裝置，其中前述按壓構件具備第2加熱器，前述控制部係藉由第2加熱器將前述按壓構件的 溫度控制在前述熱硬化性樹脂的硬化溫度以上。
  16. 如請求項14或15之安裝裝置，其中具備將加熱後的前述熱傳導延遲用板冷卻之冷卻器。
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