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TW202340394A - Ink composition and photoelectric conversion device using said ink composition - Google Patents

Ink composition and photoelectric conversion device using said ink composition Download PDF

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TW202340394A
TW202340394A TW111148719A TW111148719A TW202340394A TW 202340394 A TW202340394 A TW 202340394A TW 111148719 A TW111148719 A TW 111148719A TW 111148719 A TW111148719 A TW 111148719A TW 202340394 A TW202340394 A TW 202340394A
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榊原顕
石飛昌光
平岡諒一
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日商住友化學股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D519/00Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight

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  • Inks, Pencil-Leads, Or Crayons (AREA)
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  • Photovoltaic Devices (AREA)
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  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

The present invention addresses the problem of improving the characteristics of a photoelectric conversion device. The present invention pertains to an ink composition containing: a semiconductor material including at least one p-type semiconductor material and at least one n-type semiconductor material; and two or more solvents including a first solvent and a second solvent having a boiling point higher than that of the first solvent, wherein one among the p-type semiconductor material and the n-type semiconductor material is a non-fullerene compound represented by formula (I), and the polar term P(B1)(MPa0.5) of the Hansen solubility parameter of a B1-containing compound in which the terminal formed by cleaving the bond between A1 and B1 in the non-fullerene compound represented by formula (I) is terminated with a hydrogen atom, and the polar term P(S2)(MPa0.5) of the Hansen solubility parameter of the second solvent satisfy the condition represented by expression (III). (I): A1-B1-(A1)n, (III): |P(B1)-P(S2)| > 3.2(MPa0.5) (In formula (I), A1, B1, and n are as defined in the specification, and a compound in which the terminal of A1 is terminated with a hydrogen atom and a compound in which the terminal of B1 is terminated with a hydrogen atom satisfy the condition represented by expression (II). Expression (II): EHOMO(B1)-EHOMO(A1) > 2.0(eV) (In expression (II), EHOMO(B1) and EHOMO(A1) are as defined in the specification.)).

Description

油墨組成物及使用所述油墨組成物的光電轉換元件Ink composition and photoelectric conversion element using the same

本發明是有關於一種油墨組成物及使用其的光電轉換元件。The present invention relates to an ink composition and a photoelectric conversion element using the same.

就例如節能、減少二氧化碳的排出量的觀點而言,光電轉換元件是極其有用的器件,而備受關注。From the viewpoints of energy saving and carbon dioxide emission reduction, for example, photoelectric conversion elements are extremely useful devices and are attracting attention.

所謂光電轉換元件是至少包括包含陽極及陰極的一對電極、以及設置於該一對電極間的活性層的元件。於光電轉換元件中,使所述一對電極中的至少一個電極由透明或半透明的材料構成,使光自成為透明或半透明的電極側入射至活性層。藉由入射至活性層的光的能量(hν),於活性層中生成電荷(電洞及電子),所生成的電洞朝向陽極移動,電子朝向陰極移動。然後,到達陽極及陰極的電荷被取出至元件的外部。The photoelectric conversion element is an element including at least a pair of electrodes including an anode and a cathode, and an active layer provided between the pair of electrodes. In the photoelectric conversion element, at least one of the pair of electrodes is made of a transparent or translucent material, and light is incident on the active layer from the side of the transparent or translucent electrode. The energy (hν) of light incident on the active layer generates charges (holes and electrons) in the active layer. The generated holes move toward the anode, and the electrons move toward the cathode. Then, the charges reaching the anode and cathode are taken out to the outside of the element.

近年來,活性層中包含有機半導體材料的有機光電轉換元件由於為輕量、且容易大面積化等特徵,因此正在研究各種應用。而且,有機光電轉換元件中要求進一步提高特性。因此,進一步開發並報告了各種有機半導體材料。 另外,有機光電轉換元件的活性層是藉由塗佈包含有機半導體材料的油墨組成物並使其乾燥而形成。正在研究如下方法:藉由在此種油墨組成物中加入添加物(第二溶媒)來控制活性層內的結構而獲得高的光電轉換特性的方法。例如,於非專利文獻1中,報告了於n型半導體材料使用富勒烯衍生物的活性層中,藉由加入1,8-二碘辛烷(1,8-diiodomethane,DIO)作為與主溶媒(第一溶媒)相比沸點高且選擇性地溶解富勒烯衍生物的添加物,光電轉換特性提高。進而,相同的技術亦適用於使用非富勒烯化合物(非富勒烯受體(Nonfullerene acceptor,NFA))作為n型半導體材料的活性層中(例如,參照非專利文獻2)。 [現有技術文獻] [非專利文獻] In recent years, organic photoelectric conversion elements containing organic semiconductor materials in their active layers are being studied for various applications because they are lightweight and can easily be expanded to a large area. Furthermore, organic photoelectric conversion elements are required to further improve their characteristics. Therefore, various organic semiconductor materials have been further developed and reported. In addition, the active layer of the organic photoelectric conversion element is formed by applying an ink composition containing an organic semiconductor material and drying it. Methods are being studied to obtain high photoelectric conversion characteristics by adding additives (second solvent) to this ink composition to control the structure within the active layer. For example, in Non-Patent Document 1, it is reported that 1,8-diiodomethane (DIO) is added as the main active layer of an n-type semiconductor material using a fullerene derivative. The solvent (first solvent) has a higher boiling point than an additive that selectively dissolves fullerene derivatives, thereby improving photoelectric conversion characteristics. Furthermore, the same technology is also applied to an active layer using a non-fullerene compound (nonfullerene acceptor (NFA)) as an n-type semiconductor material (for example, see Non-Patent Document 2). [Prior art documents] [Non-patent literature]

[非專利文獻1]「美國化學會誌(J. Am. Chem. Soc)」, 2008, 130, 3619-3623 [非專利文獻2]「材料化學雜誌A(J. Mater. Chem. A)」, 2020, 8, 23628-23636 [Non-patent document 1] "J. Am. Chem. Soc", 2008, 130, 3619-3623 [Non-patent document 2] "J. Mater. Chem. A", 2020, 8, 23628-23636

[發明所欲解決之課題][Problem to be solved by the invention]

非富勒烯化合物能夠根據分子設計來調整吸收波長範圍,最近亦報告了大量的於近紅外區域具有吸收的非富勒烯化合物,作為可應對近紅外線的化合物備受關注。然而,關於包含非富勒烯化合物的光檢測元件即光電轉換元件所要求的特性,還難以說充分。Non-fullerene compounds can adjust the absorption wavelength range based on molecular design. Recently, a large number of non-fullerene compounds with absorption in the near-infrared region have been reported, attracting attention as compounds that can respond to near-infrared rays. However, it is difficult to say that the characteristics required for a photoelectric conversion element, which is a photodetection element containing a non-fullerene compound, are sufficient.

因此,要求可進一步提高光電轉換元件的特性的手段。 [解決課題之手段] Therefore, there is a demand for means that can further improve the characteristics of photoelectric conversion elements. [Means to solve the problem]

本發明者為了解決所述課題進行了努力研究,結果發現特別是藉由組合規定的溶媒來製造光電轉換元件,可解決所述課題,從而完成了本發明。The present inventors conducted diligent research to solve the above-mentioned problems, and as a result found that the above-mentioned problems can be solved by manufacturing a photoelectric conversion element by combining predetermined solvents, and thus completed the present invention.

因此,本發明提供下述〔1〕~〔12〕。 〔1〕 一種油墨組成物,包含: 半導體材料,包括至少一種p型半導體材料及至少一種n型半導體材料;以及 兩種以上的溶媒,包括第一溶媒及具有較所述第一溶媒的沸點而言高的沸點的第二溶媒, 所述p型半導體材料及所述n型半導體材料中的任一者為下述式(I)所表示的非富勒烯化合物, 包含B 1的化合物的漢森溶解度參數的極性項P(B 1)(MPa 0.5)與所述第二溶媒的漢森溶解度參數的極性項P(S2)(MPa 0.5)滿足下述式(III)所表示的條件,所述B 1是將下述式(I)所表示的非富勒烯化合物中的A 1與B 1的鍵切斷而形成的末端利用氫原子封端。 A 1-B 1-(A 1)n   (I) |P(B 1)-P(S2)|>3.2(MPa 0.5)   (III) (式(I)中, A 1表示吸電子性的基, B 1表示包含一個以上的構成單元、並構成π共軛系的基, n為0或1,於n為1的情況下,存在兩個的A 1可相同亦可不同, 包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物與包含B 1的化合物滿足下述式(II)所表示的條件; E HOMO(B 1)-E HOMO(A 1)>2.0(eV)   (II) (式(II)中, E HOMO(B 1)(eV)表示包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的B 1的化合物的最高佔據軌域的能階的值, E HOMO(A 1)(eV)表示包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物的最高佔據軌域的能階的值。)) 〔2〕 如〔1〕所述的油墨組成物,其中,所述第二溶媒是具有較所述第一溶媒的沸點而言高30℃以上的沸點的溶媒。 〔3〕 如〔1〕或〔2〕所述的油墨組成物,其中,所述第二溶媒為醚溶媒、芳香族烴溶媒、酮溶媒或酯溶媒。 〔4〕 如〔1〕至〔3〕中任一項所述的油墨組成物,其中,所述式(I)所表示的非富勒烯化合物為n型半導體材料。 〔5〕 如〔1〕至〔4〕中任一項所述的油墨組成物,其中,所述式(I)中,作為B 1中所含的所述一個以上的構成單元中的至少一個的第一構成單元為下述式(IV)所表示的構成單元,且所述第一構成單元以外的剩餘的第二構成單元為包含不飽和鍵的二價基、二價芳香族碳環基或二價芳香族雜環基,於所述第一構成單元存在兩個以上的情況下,存在兩個以上的第一構成單元可相同亦可不同,於所述第二構成單元存在兩個以上的情況下,存在兩個以上的第二構成單元可相同亦可不同。 [化1] (式(IV)中, Ar 1及Ar 2分別獨立地表示可具有取代基的芳香族碳環或可具有取代基的芳香族雜環, Y表示直接鍵結、-C(=O)-所表示的基或氧原子, R分別獨立地表示: 氫原子、 鹵素原子、 可具有取代基的烷基、 可具有取代基的環烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的環烷基氧基、 可具有取代基的芳基氧基、 可具有取代基的烷硫基、 可具有取代基的環烷硫基、 可具有取代基的芳硫基、 可具有取代基的一價雜環基、 可具有取代基的取代胺基、 可具有取代基的醯基、 可具有取代基的亞胺殘基、 可具有取代基的醯胺基、 可具有取代基的醯亞胺基、 可具有取代基的取代氧基羰基、 可具有取代基的烯基、 可具有取代基的環烯基、 可具有取代基的炔基、 可具有取代基的環炔基、 氰基、 硝基、 -C(=O)-R a所表示的基、或 -SO 2-R b所表示的基, R a及R b分別獨立地表示: 氫原子、 可具有取代基的烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的芳基氧基、或 可具有取代基的一價雜環基; 存在多個的R彼此可相同亦可不同) 〔6〕 如〔5〕所述的油墨組成物,其中所述第一構成單元為下述式(V)所表示的構成單元。 [化2] (式(V)中, Y及R如所述定義般, X 1及X 2分別獨立地表示硫原子或氧原子, Z 1及Z 2分別獨立地表示=C(R)-所表示的基或氮原子) 〔7〕 如〔6〕所述的油墨組成物,其中所述第一構成單元為下述式(V-1)所表示的構成單元。 [化3] (式(V-1)中, Y表示-C(=O)-所表示的基或氧原子, R分別獨立地表示: 氫原子、 鹵素原子、 可具有取代基的烷基、 可具有取代基的環烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的環烷基氧基、 可具有取代基的芳基氧基、 可具有取代基的烷硫基、 可具有取代基的環烷硫基、 可具有取代基的芳硫基、 可具有取代基的一價雜環基、 可具有取代基的取代胺基、 可具有取代基的醯基、 可具有取代基的亞胺殘基、 可具有取代基的醯胺基、 可具有取代基的醯亞胺基、 可具有取代基的取代氧基羰基、 可具有取代基的烯基、 可具有取代基的環烯基、 可具有取代基的炔基、 可具有取代基的環炔基、 氰基、 硝基、 -C(=O)-R a所表示的基、或 -SO 2-R b所表示的基, R a及R b分別獨立地表示: 氫原子、 可具有取代基的烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的芳基氧基、或 可具有取代基的一價雜環基; 存在多個的R可相同亦可不同) 〔8〕 如〔6〕或〔7〕所述的油墨組成物,其中B 1為具有選自由下述式(VII-1)~式(VII-16)所表示的結構所組成的群組中的任一個結構的二價基。 -CU1-          (VII-1) -CU1-CU1-        (VII-2) -CU1-CU2-        (VII-3) -CU1-CU1-CU1-      (VII-4) -CU1-CU2-CU1-      (VII-5) -CU1-CU1-CU2-      (VII-6) -CU1-CU2-CU2-      (VII-7) -CU2-CU1-CU2-      (VII-8) -CU1-CU1-CU1-CU1-    (VII-9) -CU1-CU1-CU1-CU2-    (VII-10) -CU1-CU1-CU2-CU1-    (VII-11) -CU1-CU1-CU2-CU2-    (VII-12) -CU1-CU2-CU1-CU2-    (VII-13) -CU1-CU2-CU2-CU1-    (VII-14) -CU1-CU2-CU2-CU2-    (VII-15) -CU2-CU1-CU2-CU2-    (VII-16) (式(VII-1)~式(VII-16)中, CU1表示所述第一構成單元, CU2表示所述第二構成單元; 於CU1存在兩個以上的情況下,存在兩個以上的CU1可相同亦可不同,於CU2存在兩個以上的情況下,存在兩個以上的CU2可相同亦可不同) 〔9〕 如〔1〕至〔8〕中任一項所述的油墨組成物,其中,所述p型半導體材料為共軛高分子化合物。 〔10〕 一種固化膜,是使如〔1〕至〔9〕中任一項所述的油墨組成物固化而成。 〔11〕 一種光電轉換元件,包括第一電極、第二電極、以及設置於所述第一電極與第二電極之間的活性層,所述活性層是如〔10〕所述的固化膜。 〔12〕 如〔11〕所述的光電轉換元件,為光檢測元件。 [發明的效果] Therefore, the present invention provides the following [1] to [12]. [1] An ink composition, comprising: a semiconductor material, including at least one p-type semiconductor material and at least one n-type semiconductor material; and two or more solvents, including a first solvent and one having a boiling point higher than that of the first solvent. The second solvent with a high boiling point, either the p-type semiconductor material or the n-type semiconductor material is a non-fullerene compound represented by the following formula (I), and the compound containing B 1 The polar term P (B 1 ) (MPa 0.5 ) of the Hansen solubility parameter of the second solvent and the polar term P (S2) (MPa 0.5 ) of the Hansen solubility parameter of the second solvent satisfy the conditions represented by the following formula (III), so B 1 is a terminal formed by cutting the bond between A 1 and B 1 in the non-fullerene compound represented by the following formula (I) and is terminated with a hydrogen atom. A 1 -B 1 -(A 1 )n (I) |P(B 1 )-P(S2)|>3.2(MPa 0.5 ) (III) (In formula (I), A 1 represents an electron-withdrawing group , B 1 represents a base containing one or more structural units and constituting a π conjugated system, n is 0 or 1, and when n is 1, the two A 1s may be the same or different, including A 1 A compound of A 1 whose terminal is terminated with a hydrogen atom formed by cleaving the bond with B 1 and a compound containing B 1 satisfy the conditions represented by the following formula (II); E HOMO (B 1 )-E HOMO (A 1 )>2.0 (eV) (II) (In formula (II), E HOMO (B 1 ) (eV) represents a compound containing B 1 whose terminal is terminated with a hydrogen atom, formed by cutting the bond between A 1 and B 1 The value of the energy level of the highest occupied orbital, E HOMO (A 1 ) (eV) represents the highest occupied orbital of a compound containing A 1 formed by cutting the bond between A 1 and B 1 and terminated with a hydrogen atom. The value of the energy level.)) [2] The ink composition according to [1], wherein the second solvent is a solvent having a boiling point that is 30° C. or more higher than the boiling point of the first solvent. [3] The ink composition according to [1] or [2], wherein the second solvent is an ether solvent, an aromatic hydrocarbon solvent, a ketone solvent, or an ester solvent. [4] The ink composition according to any one of [1] to [3], wherein the non-fullerene compound represented by the formula (I) is an n-type semiconductor material. [5] The ink composition according to any one of [1] to [4], wherein in the formula (I), at least one of the one or more structural units contained in B1 The first structural unit is a structural unit represented by the following formula (IV), and the remaining second structural units other than the first structural unit are a divalent group containing an unsaturated bond, or a divalent aromatic carbocyclic group Or a divalent aromatic heterocyclic group. When there are two or more first structural units, the two or more first structural units may be the same or different. When there are two or more second structural units. In the case of , there are two or more second structural units which may be the same or different. [Chemical 1] (In formula (IV), Ar 1 and Ar 2 each independently represent an aromatic carbocyclic ring that may have a substituent or an aromatic heterocyclic ring that may have a substituent, and Y represents a direct bond, -C(=O)- represents a group or oxygen atom, R independently represents: a hydrogen atom, a halogen atom, an alkyl group that may have a substituent, a cycloalkyl group that may have a substituent, an aryl group that may have a substituent, an alkyl group that may have a substituent baseoxy group, optionally substituted cycloalkyloxy group, optionally substituted aryloxy group, optionally substituted alkylthio group, optionally substituted cycloalkylthio group, optionally substituted aryloxy group Thio group, monovalent heterocyclic group which may have a substituent, substituted amine group which may have a substituent, acyl group which may have a substituent, imine residue which may have a substituent, amide group which may have a substituent, amide group which may have a substituent, substituted oxycarbonyl which may have a substituent, alkenyl which may have a substituent, cycloalkenyl which may have a substituent, alkynyl which may have a substituent, alkynyl which may have a substituent A cycloalkynyl group, a cyano group, a nitro group, a group represented by -C(=O)-R a , or a group represented by -SO 2 -R b , R a and R b each independently represent: a hydrogen atom, which can be An alkyl group having a substituent, an aryl group that may have a substituent, an alkyloxy group that may have a substituent, an aryloxy group that may have a substituent, or a monovalent heterocyclic group that may have a substituent; there are multiple R's may be the same or different from each other) [6] The ink composition according to [5], wherein the first structural unit is a structural unit represented by the following formula (V). [Chemicalization 2] (In formula (V), Y and R are as defined above, X 1 and X 2 each independently represent a sulfur atom or an oxygen atom, and Z 1 and Z 2 each independently represent a group represented by =C(R)- or nitrogen atom) [7] The ink composition according to [6], wherein the first structural unit is a structural unit represented by the following formula (V-1). [Chemical 3] (In formula (V-1), Y represents a group represented by -C(=O)- or an oxygen atom, and R each independently represents: a hydrogen atom, a halogen atom, an alkyl group that may have a substituent, an alkyl group that may have a substituent a cycloalkyl group, an aryl group that may have a substituent, an alkyloxy group that may have a substituent, a cycloalkyloxy group that may have a substituent, an aryloxy group that may have a substituent, an alkyl group that may have a substituent Thio group, cycloalkylthio group which may have a substituent, arylthio group which may have a substituent, monovalent heterocyclic group which may have a substituent, substituted amino group which may have a substituent, acyl group which may have a substituent, imine residue which may have a substituent, amide group which may have a substituent, amide group which may have a substituent, substituted oxycarbonyl group which may have a substituent, alkenyl group which may have a substituent, which may have a substituent a cycloalkenyl group, an alkynyl group which may have a substituent, a cycloalkynyl group which may have a substituent, a cyano group, a nitro group, a group represented by -C(=O)-R a , or -SO 2 -R b The represented groups, R a and R b each independently represent: a hydrogen atom, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkyloxy group which may have a substituent, an aryl group which may have a substituent. oxygen group, or a monovalent heterocyclic group which may have a substituent; the plural R present may be the same or different) [8] The ink composition as described in [6] or [7], wherein B 1 is A divalent group selected from the group consisting of structures represented by the following formula (VII-1) to formula (VII-16). -CU1- (VII-1) -CU1-CU1- (VII-2) -CU1-CU2- (VII-3) -CU1-CU1-CU1- (VII-4) -CU1-CU2-CU1- (VII- 5) -CU1-CU1-CU2- (VII-6) -CU1-CU2-CU2- (VII-7) -CU2-CU1-CU2- (VII-8) -CU1-CU1-CU1-CU1- (VII- 9) -CU1-CU1-CU1-CU2- (VII-10) -CU1-CU1-CU2-CU1- (VII-11) -CU1-CU1-CU2-CU2- (VII-12) -CU1-CU2-CU1 -CU2- (VII-13) -CU1-CU2-CU2-CU1- (VII-14) -CU1-CU2-CU2-CU2- (VII-15) -CU2-CU1-CU2-CU2- (VII-16) (In Formula (VII-1) to Formula (VII-16), CU1 represents the first structural unit, and CU2 represents the second structural unit; when there are two or more CU1s, there are two or more CU1s. They may be the same or different. When there are two or more CU2s, the two or more CU2s may be the same or different.) [9] The ink composition according to any one of [1] to [8], Wherein, the p-type semiconductor material is a conjugated polymer compound. [10] A cured film obtained by curing the ink composition according to any one of [1] to [9]. [11] A photoelectric conversion element including a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer being the cured film according to [10]. [12] The photoelectric conversion element according to [11] is a photodetection element. [Effects of the invention]

藉由本發明,可提供一種光電轉換元件,其藉由在光電轉換元件的製造方法中組合使用規定的溶媒來進一步提高特性。According to the present invention, it is possible to provide a photoelectric conversion element in which characteristics are further improved by using a predetermined solvent in combination with a method for manufacturing the photoelectric conversion element.

以下,對本發明的實施方式進行說明,特別是參照圖式來說明光電轉換元件。再者,圖式只不過以能夠理解發明的程度概略性地示出了構成要素的形狀、大小及配置。本發明並不受以下記述的限定,各構成要素能夠於不脫離本發明的主旨的範圍內適宜變更。另外,本發明的實施方式的結構不必限於以圖式所表示的配置進行製造或使用。Hereinafter, embodiments of the present invention will be described, and in particular, photoelectric conversion elements will be described with reference to the drawings. In addition, the drawings only schematically show the shapes, sizes, and arrangements of the constituent elements to an extent that allows the invention to be understood. The present invention is not limited to the following description, and each constituent element can be appropriately changed within the scope of the spirit of the present invention. In addition, the structure of the embodiment of the present invention is not necessarily limited to manufacturing or using the configuration shown in the drawings.

首先對於以下的說明中共同使用的用語進行說明。First, terms commonly used in the following description will be explained.

所謂「非富勒烯化合物」是指並非富勒烯及富勒烯衍生物中的任一者的化合物。The term "non-fullerene compound" refers to a compound that is neither fullerene nor fullerene derivatives.

所謂「π共軛系」是指π電子非局部存在化於多個鍵上的體系。The so-called "π conjugated system" refers to a system in which π electrons exist non-locally on multiple bonds.

所謂「高分子化合物」是指具有分子量分佈,且聚苯乙烯換算的數量平均分子量為1×10 3以上且1×10 8以下的聚合物。再者,高分子化合物中所含的構成單元合計為100莫耳%。 The term "polymer compound" refers to a polymer having a molecular weight distribution and a number average molecular weight in terms of polystyrene of 1×10 3 or more and 1×10 8 or less. In addition, the total amount of structural units contained in the polymer compound is 100 mol%.

所謂「構成單元」是指本實施方式的化合物及高分子化合物中存在一個以上的源自原料化合物(單體)的殘基。The "structural unit" means that the compound and polymer compound of this embodiment have one or more residues derived from the raw material compound (monomer).

「氫原子」可為輕氫原子,亦可為重氫原子。"Hydrogen atom" can be a light hydrogen atom or a heavy hydrogen atom.

作為「鹵素原子」的例子,可列舉氟原子、氯原子、溴原子及碘原子。Examples of the "halogen atom" include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

「可具有取代基」的形態包括:構成化合物或基的所有氫原子未經取代的情況、及一個以上的氫原子的部分或全部經取代基取代的情況此兩種形態。The form of "may have a substituent" includes two forms: a case in which all the hydrogen atoms constituting the compound or group are unsubstituted, and a case in which one or more hydrogen atoms are partially or entirely substituted with a substituent.

作為「取代基」的例子,可列舉:鹵素原子、烷基、環烷基、烯基、環烯基、炔基、環炔基、烷基氧基、環烷基氧基、烷硫基、環烷硫基、芳基、芳基氧基、芳硫基、一價雜環基、取代胺基、醯基、亞胺殘基、醯胺基、醯亞胺基、取代氧基羰基、氰基、烷基磺醯基、及硝基。再者,於本說明書中提及碳原子數的情況下,通常該碳原子數中不含取代基的碳原子數。Examples of "substituent" include: halogen atom, alkyl group, cycloalkyl group, alkenyl group, cycloalkenyl group, alkynyl group, cycloalkynyl group, alkyloxy group, cycloalkyloxy group, alkylthio group, Cycloalkylthio group, aryl group, aryloxy group, arylthio group, monovalent heterocyclic group, substituted amine group, acyl group, imine residue, amide group, amide imine group, substituted oxycarbonyl group, cyanide group, alkylsulfonyl group, and nitro group. Furthermore, when the number of carbon atoms is mentioned in this specification, the number of carbon atoms generally does not include the number of carbon atoms of the substituent.

於本說明書中,只要無特別限定,則「烷基」可為直鏈狀、分支狀及環狀中的任一者。直鏈狀的烷基的碳原子數不包括取代基的碳原子數,通常為1~50,較佳為1~30,更佳為1~20。分支狀或環狀的烷基的碳原子數不包括取代基的碳原子數,通常為3~50,較佳為3~30,更佳為4~20。In this specification, unless otherwise specified, the "alkyl group" may be linear, branched, or cyclic. The number of carbon atoms of the linear alkyl group does not include the number of carbon atoms of the substituent, and is usually 1 to 50, preferably 1 to 30, and more preferably 1 to 20. The number of carbon atoms of the branched or cyclic alkyl group does not include the number of carbon atoms of the substituent, and is usually 3 to 50, preferably 3 to 30, and more preferably 4 to 20.

作為烷基的具體例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、正戊基、異戊基、2-乙基丁基、正己基、環己基、正庚基、環己基甲基、環己基乙基、正辛基、2-乙基己基、3-正丙基庚基、金剛烷基、正癸基、3,7-二甲基辛基、2-乙基辛基、2-正己基-癸基、正十二烷基、十四烷基、十六烷基、十八烷基、二十烷基。Specific examples of the alkyl group include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentyl, isopentyl, and 2-ethylbutyl base, n-hexyl, cyclohexyl, n-heptyl, cyclohexylmethyl, cyclohexylethyl, n-octyl, 2-ethylhexyl, 3-n-propylheptyl, adamantyl, n-decyl, 3, 7-dimethyloctyl, 2-ethyloctyl, 2-n-hexyl-decyl, n-dodecyl, tetradecyl, hexadecyl, octadecyl, eicosyl.

烷基可具有取代基。具有取代基的烷基例如為所述例示的烷基中的氫原子被烷基氧基、芳基、氟原子等取代基取代而成的基。The alkyl group may have a substituent. The alkyl group having a substituent is, for example, a group in which a hydrogen atom in the alkyl group described above is substituted by a substituent such as an alkyloxy group, an aryl group, or a fluorine atom.

作為具有取代基的烷基的具體例,可列舉:三氟甲基、五氟乙基、全氟丁基、全氟己基、全氟辛基、3-苯基丙基、3-(4-甲基苯基)丙基、3-(3,5-二己基苯基)丙基、6-乙基氧基己基。Specific examples of the alkyl group having a substituent include trifluoromethyl, pentafluoroethyl, perfluorobutyl, perfluorohexyl, perfluorooctyl, 3-phenylpropyl, 3-(4- Methylphenyl)propyl, 3-(3,5-dihexylphenyl)propyl, 6-ethyloxyhexyl.

「環烷基」可為單環的基,亦可為多環的基。環烷基可具有取代基。環烷基的碳原子數不包括取代基的碳原子數,通常為3~30,較佳為12~19。"Cycloalkyl" may be a monocyclic group or a polycyclic group. The cycloalkyl group may have a substituent. The number of carbon atoms of the cycloalkyl group does not include the number of carbon atoms of the substituent, and is usually 3 to 30, preferably 12 to 19.

作為環烷基的例子,可列舉:環戊基、環己基、環庚基、金剛烷基等不具有取代基的烷基、及該些基中的氫原子被烷基、烷基氧基、芳基、氟原子等取代基取代而成的基。Examples of the cycloalkyl group include unsubstituted alkyl groups such as cyclopentyl, cyclohexyl, cycloheptyl, and adamantyl, and hydrogen atoms in these groups are substituted by alkyl groups, alkyloxy groups, A group substituted by substituents such as aryl groups and fluorine atoms.

作為具有取代基的環烷基的具體例,可列舉甲基環己基、乙基環己基。Specific examples of the cycloalkyl group having a substituent include methylcyclohexyl and ethylcyclohexyl.

所謂「p價芳香族碳環基」(p表示1以上的整數)是指自可具有取代基的芳香族烴除去p個與構成環的碳原子直接鍵結的氫原子後殘留的原子團。p價芳香族碳環基亦可更具有取代基。再者,「芳香族碳環」包含藉由例如含有雜原子的基(取代基)對兩個以上的碳環(芳香環)進行跨環而成的結構。The "p-valent aromatic carbocyclic group" (p represents an integer of 1 or more) refers to an atomic group remaining after removing p hydrogen atoms directly bonded to the carbon atoms constituting the ring from an aromatic hydrocarbon which may have a substituent. The p-valent aromatic carbocyclic group may further have a substituent. In addition, "aromatic carbocyclic ring" includes a structure in which two or more carbocyclic rings (aromatic rings) are spanned by, for example, a heteroatom-containing group (substituent).

「芳基」是一價芳香族碳環基,且是指自可具有取代基的芳香族烴除去一個與構成環的碳原子直接鍵結的氫原子後殘留的原子團。"Aryl group" is a monovalent aromatic carbocyclic group, and refers to an atomic group remaining after removing one hydrogen atom directly bonded to a carbon atom constituting the ring from an aromatic hydrocarbon which may have a substituent.

芳基可具有取代基。作為芳基的具體例,可列舉:苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-芘基、2-芘基、4-芘基、2-芴基、3-芴基、4-芴基、2-苯基苯基、3-苯基苯基、4-苯基苯基及該些基中的氫原子被烷基、烷基氧基、芳基、氟原子等取代基取代而成的基。The aryl group may have a substituent. Specific examples of the aryl group include phenyl, 1-naphthyl, 2-naphthyl, 1-anthracenyl, 2-anthracenyl, 9-anthracenyl, 1-pyrenyl, 2-pyrenyl, 4- Pyrenyl, 2-fluorenyl, 3-fluorenyl, 4-fluorenyl, 2-phenylphenyl, 3-phenylphenyl, 4-phenylphenyl and the hydrogen atoms in these groups are replaced by alkyl, A group substituted by substituents such as alkyloxy groups, aryl groups, and fluorine atoms.

「烷基氧基」可為直鏈狀、分支狀及環狀中的任一者。直鏈狀的烷基氧基的碳原子數不包括取代基的碳原子數,通常為1~40,較佳為1~10。分支狀或環狀的烷基氧基的碳原子數不包括取代基的碳原子數,通常為3~40,較佳為4~10。The "alkyloxy group" may be linear, branched, or cyclic. The number of carbon atoms of the linear alkyloxy group does not include the number of carbon atoms of the substituent, and is usually 1 to 40, preferably 1 to 10. The number of carbon atoms of the branched or cyclic alkyloxy group does not include the number of carbon atoms of the substituent, and is usually 3 to 40, preferably 4 to 10.

烷基氧基可具有取代基。作為烷基氧基的具體例,可列舉:甲氧基、乙氧基、正丙基氧基、異丙基氧基、正丁基氧基、異丁基氧基、第三丁基氧基、正戊基氧基、正己基氧基、環己基氧基、正庚基氧基、正辛基氧基、2-乙基己基氧基、正壬基氧基、正癸基氧基、3,7-二甲基辛基氧基、3-庚基十二烷基氧基、月桂基氧基及該些基中的氫原子被烷基氧基、芳基、氟原子等取代而成的基。The alkyloxy group may have a substituent. Specific examples of the alkyloxy group include: methoxy group, ethoxy group, n-propyloxy group, isopropyloxy group, n-butyloxy group, isobutyloxy group, and tert-butyloxy group , n-pentyloxy, n-hexyloxy, cyclohexyloxy, n-heptyloxy, n-octyloxy, 2-ethylhexyloxy, n-nonyloxy, n-decyloxy, 3 , 7-dimethyloctyloxy, 3-heptyldodecyloxy, lauryloxy and hydrogen atoms in these groups are substituted by alkyloxy, aryl, fluorine atoms, etc. base.

「環烷基氧基」所具有的環烷基可為單環的基,亦可為多環的基。環烷基氧基可具有取代基。環烷基氧基的碳原子數不包括取代基的碳原子數,通常為3~30,較佳為12~19。The cycloalkyl group contained in the "cycloalkyloxy group" may be a monocyclic group or a polycyclic group. The cycloalkyloxy group may have a substituent. The number of carbon atoms of the cycloalkyloxy group does not include the number of carbon atoms of the substituent, and is usually 3 to 30, preferably 12 to 19.

作為環烷基氧基的例子,可列舉環戊基氧基、環己基氧基、環庚基氧基等不具有取代基的環烷基氧基、及該些基中的氫原子被氟原子、烷基等取代而成的基。Examples of the cycloalkyloxy group include unsubstituted cycloalkyloxy groups such as cyclopentyloxy, cyclohexyloxy, and cycloheptyloxy, and hydrogen atoms in these groups are replaced by fluorine atoms. , alkyl and other substituted groups.

「芳基氧基」的碳原子數不包括取代基的碳原子數,通常為6~60,較佳為6~48。The number of carbon atoms of the "aryloxy group" does not include the number of carbon atoms of the substituent, and is usually 6 to 60, preferably 6 to 48.

芳基氧基可具有取代基。作為芳基氧基的具體例,可列舉:苯氧基、1-萘基氧基、2-萘基氧基、1-蒽基氧基、9-蒽基氧基、1-芘基氧基、及該些基中的氫原子被烷基、烷基氧基、氟原子等取代基取代而成的基。The aryloxy group may have a substituent. Specific examples of the aryloxy group include: phenoxy group, 1-naphthyloxy group, 2-naphthyloxy group, 1-anthracenyloxy group, 9-anthracenyloxy group, and 1-pyrenyloxy group , and groups in which the hydrogen atoms in these groups are substituted by substituents such as alkyl groups, alkyloxy groups, and fluorine atoms.

「烷硫基」可為直鏈狀、分支狀及環狀中的任一者。直鏈狀的烷硫基的碳原子數不包括取代基的碳原子數,通常為1~40,較佳為1~10。分支狀及環狀的烷硫基的碳原子數不包括取代基的碳原子數,通常為3~40,較佳為4~10。The "alkylthio group" may be linear, branched, or cyclic. The number of carbon atoms of the linear alkylthio group does not include the number of carbon atoms of the substituent, and is usually 1 to 40, preferably 1 to 10. The number of carbon atoms of the branched and cyclic alkylthio groups does not include the number of carbon atoms of the substituent, and is usually 3 to 40, preferably 4 to 10.

烷硫基可具有取代基。作為烷硫基的具體例,可列舉:甲硫基、乙硫基、丙硫基、異丙硫基、丁硫基、異丁硫基、第三丁硫基、戊硫基、己硫基、環己硫基、庚硫基、辛硫基、2-乙基己硫基、壬硫基、癸硫基、3,7-二甲基辛硫基、月桂基硫基及三氟甲硫基。The alkylthio group may have a substituent. Specific examples of the alkylthio group include: methylthio group, ethylthio group, propylthio group, isopropylthio group, butylthio group, isobutylthio group, tert-butylthio group, pentylthio group, and hexylthio group , cyclohexylthio, heptylthio, octylthio, 2-ethylhexylthio, nonylthio, decylthio, 3,7-dimethyloctylthio, laurylthio and trifluoromethylthio base.

「環烷硫基」所具有的環烷基可為單環的基,亦可為多環的基。環烷硫基可具有取代基。環烷硫基的碳原子數不包括取代基的碳原子數,通常為3~30,較佳為12~19。The cycloalkyl group contained in the "cycloalkylthio group" may be a monocyclic group or a polycyclic group. The cycloalkylthio group may have a substituent. The number of carbon atoms of the cycloalkylthio group does not include the number of carbon atoms of the substituent, and is usually 3 to 30, preferably 12 to 19.

作為可具有取代基的環烷硫基的例子,可列舉環己硫基。Examples of the cycloalkylthio group which may have a substituent include a cyclohexylthio group.

「芳硫基」的碳原子數不包括取代基的碳原子數,通常為6~60,較佳為6~48。The number of carbon atoms of the "arylthio group" does not include the number of carbon atoms of the substituent, and is usually 6 to 60, preferably 6 to 48.

芳硫基可具有取代基。作為芳硫基的例子,可列舉:苯硫基、C1~C12烷基氧基苯硫基(C1~C12表示緊隨其後記載的基的碳原子數為1~12。以下亦相同)、C1~C12烷基苯硫基、1-萘硫基、2-萘硫基及五氟苯硫基。The arylthio group may have a substituent. Examples of the arylthio group include: phenylthio group, C1 to C12 alkyloxyphenylthio group (C1 to C12 indicates that the number of carbon atoms of the group described next is 1 to 12. The same applies below), C1~C12 alkylphenylthio, 1-naphthylthio, 2-naphthylthio and pentafluorophenylthio.

所謂「p價雜環基」是指自可具有取代基的雜環式化合物除去與構成環的碳原子或雜原子直接鍵結的氫原子中的p個氫原子後殘留的原子團。The "p-valent heterocyclic group" refers to an atomic group remaining after removing p hydrogen atoms directly bonded to carbon atoms or heteroatoms constituting the ring from a heterocyclic compound which may have a substituent.

p價雜環基亦可更具有取代基。p價雜環基的碳原子數不包括取代基的碳原子數,通常為2~30,較佳為2~6。The p-valent heterocyclic group may further have a substituent. The number of carbon atoms of the p-valent heterocyclic group does not include the number of carbon atoms of the substituent, and is usually 2 to 30, preferably 2 to 6.

作為雜環式化合物可具有的取代基,例如可列舉:鹵素原子、烷基、芳基、烷基氧基、芳基氧基、烷硫基、芳硫基、一價雜環基、取代胺基、醯基、亞胺殘基、醯胺基、醯亞胺基、取代氧基羰基、烯基、炔基、氰基及硝基。p價雜環基包括「p價芳香族雜環基」。Examples of substituents that the heterocyclic compound may have include a halogen atom, an alkyl group, an aryl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, a monovalent heterocyclic group, and a substituted amine. group, acyl group, imine residue, amide group, amide imine group, substituted oxycarbonyl group, alkenyl group, alkynyl group, cyano group and nitro group. The p-valent heterocyclic group includes "p-valent aromatic heterocyclic group".

「p價芳香族雜環基」是指自可具有取代基的芳香族雜環式化合物除去與構成環的碳原子或雜原子直接鍵結的氫原子中的p個氫原子後殘留的原子團。p價芳香族雜環基亦可更具有取代基。A "p-valent aromatic heterocyclic group" refers to an atomic group remaining after removing p hydrogen atoms directly bonded to carbon atoms or heteroatoms constituting the ring from an aromatic heterocyclic compound which may have a substituent. The p-valent aromatic heterocyclic group may further have a substituent.

芳香族雜環式化合物中,除了包含雜環本身顯示芳香族性的化合物以外,亦包含雜環本身不顯示芳香族性但於雜環中縮環有芳香環的化合物。Aromatic heterocyclic compounds include, in addition to compounds in which the heterocycle itself exhibits aromaticity, compounds in which the heterocycle itself does not exhibit aromaticity but has an aromatic ring condensed into the heterocycle.

芳香族雜環式化合物中,作為雜環本身顯示芳香族性的化合物的具體例,可列舉:噁二唑、噻二唑、噻唑、噁唑、噻吩、吡咯、磷雜環戊二烯、呋喃、吡啶、吡嗪、嘧啶、三嗪、噠嗪、喹啉、異喹啉、咔唑及二苯並磷雜環戊二烯。Among aromatic heterocyclic compounds, specific examples of compounds in which the heterocycle itself exhibits aromaticity include: oxadiazole, thiadiazole, thiazole, oxazole, thiophene, pyrrole, phosphocyclopentadiene, and furan , pyridine, pyrazine, pyrimidine, triazine, pyridazine, quinoline, isoquinoline, carbazole and dibenzophospholane.

芳香族雜環式化合物中,作為芳香族雜環本身不顯示芳香族性而於雜環上縮環有芳香環的化合物的具體例,可列舉:啡噁嗪、啡噻嗪、二苯並硼雜環戊二烯、二苯並噻咯及苯並吡喃。Among the aromatic heterocyclic compounds, specific examples of compounds in which the aromatic heterocyclic ring itself does not exhibit aromaticity but has an aromatic ring condensed on the heterocyclic ring include: phenoxazine, phenylthiazine, and dibenzoboron. Heterocyclopentadiene, dibenzosilole and benzopyran.

一價雜環基的碳原子數不包括取代基的碳原子數,通常為2~60,較佳為4~20。The number of carbon atoms of the monovalent heterocyclic group does not include the number of carbon atoms of the substituent, and is usually 2 to 60, preferably 4 to 20.

一價雜環基可具有取代基,作為一價雜環基的具體例,例如可列舉:噻吩基、吡咯基、呋喃基、吡啶基、哌啶基、喹啉基、異喹啉基、嘧啶基、三嗪基及該些基中的氫原子被烷基、烷基氧基等取代而成的基。The monovalent heterocyclic group may have a substituent. Specific examples of the monovalent heterocyclic group include: thienyl, pyrrolyl, furyl, pyridyl, piperidyl, quinolyl, isoquinolyl, and pyrimidine groups, triazinyl groups, and groups in which the hydrogen atoms in these groups are substituted by alkyl groups, alkyloxy groups, etc.

「取代胺基」是指具有取代基的胺基。作為胺基所具有的取代基的例子,可列舉烷基、芳基及一價雜環基,較佳為烷基、芳基或一價雜環基。取代胺基的碳原子數通常為2~30。"Substituted amine group" means an amine group having a substituent. Examples of the substituent of the amino group include an alkyl group, an aryl group and a monovalent heterocyclic group, and an alkyl group, an aryl group or a monovalent heterocyclic group is preferred. The number of carbon atoms of the substituted amino group is usually 2 to 30.

作為取代胺基的例子,可列舉:二甲基胺基、二乙基胺基等二烷基胺基;二苯基胺基、雙(4-甲基苯基)胺基、雙(4-第三丁基苯基)胺基、雙(3,5-二-第三丁基苯基)胺基等二芳基胺基。Examples of the substituted amino group include dialkylamino groups such as dimethylamino group and diethylamino group; diphenylamino group, bis(4-methylphenyl)amine group, bis(4- Diarylamine groups such as tertiary butylphenyl)amine group and bis(3,5-di-tertiary butylphenyl)amine group.

「醯基」可具有取代基。醯基的碳原子數不包括取代基的碳原子數,通常為2~20,較佳為2~18。作為醯基的具體例,可列舉:乙醯基、丙醯基、丁醯基、異丁醯基、三甲基乙醯基、苯甲醯基、三氟乙醯基及五氟苯甲醯基。The "acyl group" may have a substituent. The number of carbon atoms of the acyl group does not include the number of carbon atoms of the substituent, and is usually 2 to 20, preferably 2 to 18. Specific examples of the acyl group include an acetyl group, a propyl group, a butyl group, an isobutyl group, a trimethylacetyl group, a benzoyl group, a trifluoroacetyl group, and a pentafluorobenzoyl group.

所謂「亞胺殘基」是指自亞胺化合物除去一個與構成碳原子-氮原子雙鍵的碳原子或氮原子直接鍵結的氫原子後殘留的原子團。所謂「亞胺化合物」是指分子內具有碳原子-氮原子雙鍵的有機化合物。作為亞胺化合物的例子,可列舉醛亞胺、酮亞胺及醛亞胺中的與構成碳原子-氮原子雙鍵的氮原子鍵結的氫原子被烷基等取代而成的化合物。The so-called "imine residue" refers to the atomic group remaining after removing a hydrogen atom directly bonded to a carbon atom or a nitrogen atom constituting a carbon atom-nitrogen atom double bond from an imine compound. The so-called "imine compound" refers to an organic compound with a carbon atom-nitrogen atom double bond in the molecule. Examples of the imine compound include aldimines, ketimines, and aldimines in which a hydrogen atom bonded to a nitrogen atom constituting a carbon atom-nitrogen atom double bond is substituted with an alkyl group or the like.

亞胺殘基通常碳原子數為2~20,較佳為碳原子數為2~18。作為亞胺殘基的例子,可列舉下述結構式所表示的基。The imine residue usually has 2 to 20 carbon atoms, preferably 2 to 18 carbon atoms. Examples of the imine residue include groups represented by the following structural formulas.

[化4] [Chemical 4]

「醯胺基」是指自醯胺上除去一個與氮原子鍵結的氫原子後殘留的原子團。醯胺基的碳原子數通常為1~20,較佳為1~18。作為醯胺基的具體例,可列舉:甲醯胺基、乙醯胺基、丙醯胺基、丁醯胺基、苯甲醯胺基、三氟乙醯胺基、五氟苯甲醯胺基、二甲醯胺基、二乙醯胺基、二丙醯胺基、二丁醯胺基、二苯甲醯胺基、二-三氟乙醯胺基、及二-五氟苯甲醯胺基。"Camide group" refers to the atomic group remaining after removing a hydrogen atom bonded to a nitrogen atom from amide. The number of carbon atoms of the amide group is usually 1 to 20, preferably 1 to 18. Specific examples of the amide group include a formamide group, an acetamide group, a propionamide group, a butylamide group, a benzamide group, a trifluoroacetamide group, and a pentafluorobenzamide group. base, dimethylamide group, diethylamide group, dipropylamide group, dibutylamide group, diphenylamide group, di-trifluoroacetamide group, and di-pentafluorobenzamide group Amino group.

所謂「醯亞胺基」是指自醯亞胺上除去一個與氮原子鍵結的氫原子後殘留的原子團。醯亞胺基的碳原子數通常為4~20。作為醯亞胺基的具體例,可列舉下述結構式所表示的基。The so-called "acyl imine group" refers to the atomic group remaining after removing a hydrogen atom bonded to a nitrogen atom from the acyl imine. The number of carbon atoms of the amide group is usually 4 to 20. Specific examples of the acyl imine group include groups represented by the following structural formulas.

[化5] [Chemistry 5]

所謂「取代氧基羰基」是指R'-O-(C=O)-所表示的基。此處,R'表示烷基、芳基、芳烷基、或一價雜環基。The "substituted oxycarbonyl group" refers to a group represented by R'-O-(C=O)-. Here, R' represents an alkyl group, an aryl group, an aralkyl group, or a monovalent heterocyclic group.

取代氧基羰基的碳原子數不包括取代基的碳原子數,通常為2~60,較佳為2~48。The number of carbon atoms of the substituted oxycarbonyl group does not include the number of carbon atoms of the substituent, and is usually 2 to 60, preferably 2 to 48.

作為取代氧基羰基的具體例,可列舉:甲氧基羰基、乙氧基羰基、丙氧基羰基、異丙氧基羰基、丁氧基羰基、異丁氧基羰基、第三丁氧基羰基、戊基氧基羰基、己基氧基羰基、環己基氧基羰基、庚基氧基羰基、辛基氧基羰基、2-乙基己基氧基羰基、壬基氧基羰基、癸基氧基羰基、3,7-二甲基辛基氧基羰基、十二烷基氧基羰基、三氟甲氧基羰基、五氟乙氧基羰基、全氟丁氧基羰基、全氟己基氧基羰基、全氟辛基氧基羰基、苯氧基羰基、萘氧基羰基、及吡啶氧基羰基。Specific examples of the substituted oxycarbonyl group include: methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, isopropoxycarbonyl group, butoxycarbonyl group, isobutoxycarbonyl group, and tert-butoxycarbonyl group , pentyloxycarbonyl, hexyloxycarbonyl, cyclohexyloxycarbonyl, heptyloxycarbonyl, octyloxycarbonyl, 2-ethylhexyloxycarbonyl, nonyloxycarbonyl, decyloxycarbonyl , 3,7-dimethyloctyloxycarbonyl, dodecyloxycarbonyl, trifluoromethoxycarbonyl, pentafluoroethoxycarbonyl, perfluorobutoxycarbonyl, perfluorohexyloxycarbonyl, Perfluorooctyloxycarbonyl, phenoxycarbonyl, naphthyloxycarbonyl, and pyridyloxycarbonyl.

「烯基」可為直鏈狀、分支狀及環狀中的任一者。直鏈狀的烯基的碳原子數不包括取代基的碳原子數,通常為2~30,較佳為3~20。分支狀或環狀的烯基的碳原子數不包括取代基的碳原子數,通常為3~30,較佳為4~20。The "alkenyl group" may be linear, branched, or cyclic. The number of carbon atoms of the linear alkenyl group does not include the number of carbon atoms of the substituent, and is usually 2 to 30, preferably 3 to 20. The number of carbon atoms of the branched or cyclic alkenyl group does not include the number of carbon atoms of the substituent, and is usually 3 to 30, preferably 4 to 20.

烯基可具有取代基。作為烯基的具體例,可列舉:乙烯基、1-丙烯基、2-丙烯基、2-丁烯基、3-丁烯基、3-戊烯基、4-戊烯基、1-己烯基、5-己烯基、7-辛烯基及該些基中的氫原子被烷基、烷基氧基、芳基、氟原子取代而成的基。The alkenyl group may have a substituent. Specific examples of the alkenyl group include vinyl, 1-propenyl, 2-propenyl, 2-butenyl, 3-butenyl, 3-pentenyl, 4-pentenyl, and 1-hexenyl. Alkenyl, 5-hexenyl, 7-octenyl, and groups in which hydrogen atoms in these groups are substituted by alkyl groups, alkyloxy groups, aryl groups, and fluorine atoms.

「環烯基」可為單環的基,亦可為多環的基。環烯基可具有取代基。環烯基的碳原子數不包括取代基的碳原子數,通常為3~30,較佳為12~19。"Cycloalkenyl" may be a monocyclic group or a polycyclic group. The cycloalkenyl group may have a substituent. The number of carbon atoms of the cycloalkenyl group does not include the number of carbon atoms of the substituent, and is usually 3 to 30, preferably 12 to 19.

作為環烯基的例子,可列舉:環己烯基等不具有取代基的環烯基、及該些基中的氫原子被烷基、烷基氧基、芳基、氟原子取代而成的基。Examples of the cycloalkenyl group include unsubstituted cycloalkenyl groups such as cyclohexenyl groups, and those in which hydrogen atoms in these groups are substituted by alkyl groups, alkyloxy groups, aryl groups, or fluorine atoms. base.

作為具有取代基的環烯基的例子,可列舉甲基環己烯基及乙基環己烯基。Examples of the cycloalkenyl group having a substituent include methylcyclohexenyl and ethylcyclohexenyl.

「炔基」可為直鏈狀、分支狀及環狀中的任一者。直鏈狀的烯基的碳原子數不包括取代基的碳原子數,通常為2~20,較佳為3~20。分支狀或環狀的烯基的碳原子數不包括取代基的碳原子數,通常為4~30,較佳為4~20。The "alkynyl group" may be linear, branched, or cyclic. The number of carbon atoms of the linear alkenyl group does not include the number of carbon atoms of the substituent, and is usually 2 to 20, preferably 3 to 20. The number of carbon atoms of the branched or cyclic alkenyl group does not include the number of carbon atoms of the substituent, and is usually 4 to 30, preferably 4 to 20.

炔基可具有取代基。作為炔基的具體例,可列舉乙炔基、1-丙炔基、2-丙炔基、2-丁炔基、3-丁炔基、3-戊炔基、4-戊炔基、1-己炔基、5-己炔基及該些基中的氫原子被烷基氧基、芳基、氟原子取代而成的基。The alkynyl group may have a substituent. Specific examples of the alkynyl group include ethynyl, 1-propynyl, 2-propynyl, 2-butynyl, 3-butynyl, 3-pentynyl, 4-pentynyl, 1- Hexynyl group, 5-hexynyl group, and groups in which hydrogen atoms in these groups are substituted by alkyloxy groups, aryl groups, or fluorine atoms.

「環炔基」可為單環的基,亦可為多環的基。環炔基可具有取代基。環炔基的碳原子數不包括取代基的碳原子數,通常為4~30,較佳為12~19。"Cycloalkynyl" may be a monocyclic group or a polycyclic group. The cycloalkynyl group may have a substituent. The number of carbon atoms of the cycloalkynyl group does not include the number of carbon atoms of the substituent, and is usually 4 to 30, preferably 12 to 19.

作為環炔基的例子,可列舉環己炔基等不具有取代基的環炔基、及該些基中的氫原子被烷基、烷基氧基、芳基、氟原子取代而成的基。Examples of cycloalkynyl groups include unsubstituted cycloalkynyl groups such as cyclohexynyl groups, and groups in which hydrogen atoms in these groups are substituted by alkyl groups, alkyloxy groups, aryl groups, and fluorine atoms. .

作為具有取代基的環炔基的例子,可列舉甲基環己炔基及乙基環己炔基。Examples of the cycloalkynyl group having a substituent include methylcyclohexynyl and ethylcyclohexynyl.

「烷基磺醯基」可為直鏈狀,亦可為分支狀。烷基磺醯基可具有取代基。烷基磺醯基的碳原子數不包括取代基的碳原子數,通常為1~30。作為烷基磺醯基的具體例,可列舉:甲基磺醯基、乙基磺醯基及十二烷基磺醯基。"Alkylsulfonyl group" may be linear or branched. The alkylsulfonyl group may have a substituent. The number of carbon atoms of the alkylsulfonyl group does not include the number of carbon atoms of the substituent, and is usually 1 to 30. Specific examples of the alkylsulfonyl group include a methylsulfonyl group, an ethylsulfonyl group and a dodecylsulfonyl group.

化學式中可標註的符號「*」表示鍵結鍵。The symbol "*" that can be marked in the chemical formula indicates a bond.

「油墨組成物(以下,有時亦簡稱為油墨)」是指用於塗佈法的液狀體,並不限定於已著色的液體。另外,「塗佈法」包括使用液狀物質來形成膜(層)的方法,例如可列舉:槽模塗佈法、狹縫塗佈法、刮刀塗佈法、旋塗法、澆鑄法、微凹版塗佈法、凹版塗佈法、棒塗法、輥塗法、線棒塗佈法、浸塗法、噴霧塗佈法、網版印刷法、凹版印刷法、柔版印刷法、平版印刷法、噴墨印刷法、分配器印刷法、噴嘴塗佈法及毛細管塗佈法。"Ink composition (hereinafter, sometimes referred to as ink)" refers to a liquid used in the coating method and is not limited to a colored liquid. In addition, "coating method" includes methods that use liquid substances to form films (layers). Examples include: slot die coating method, slit coating method, blade coating method, spin coating method, casting method, micro-coating method, etc. Gravure coating method, gravure coating method, rod coating method, roller coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, gravure printing method, flexographic printing method, lithographic printing method , inkjet printing method, dispenser printing method, nozzle coating method and capillary coating method.

油墨組成物可為溶液,亦可為分散液、乳液(乳濁液)、懸浮液(懸濁液)等分散液。The ink composition may be a solution or a dispersion such as a dispersion, emulsion (emulsion), or suspension (suspension).

所謂「吸收波峰波長」為基於於規定的波長範圍內測定的吸收光譜的吸收波峰而確定的參數,且是指吸收光譜的吸收波峰中吸光度最大的吸收波峰的波長。The "absorption peak wavelength" is a parameter determined based on the absorption peak of the absorption spectrum measured within a predetermined wavelength range, and refers to the wavelength of the absorption peak with the maximum absorbance among the absorption peaks of the absorption spectrum.

所謂「外部量子效率」亦被稱為EQE(External Quantum Efficiency),且是指對於所產生的電子中可取出至光電轉換元件的外部的電子的數目相對於照射至光電轉換元件上的光子的數目,以比率(%)表示的值。The so-called "External Quantum Efficiency" is also called EQE (External Quantum Efficiency), and refers to the number of generated electrons that can be taken out to the outside of the photoelectric conversion element relative to the number of photons irradiated onto the photoelectric conversion element. , a value expressed as a ratio (%).

本實施方式的油墨組成物是如下油墨組成物,其包含:半導體材料,包括至少一種p型半導體材料及至少一種n型半導體材料;以及 兩種以上的溶媒,包括第一溶媒及具有較所述第一溶媒的沸點而言高的沸點的第二溶媒, 所述p型半導體材料及所述n型半導體材料中的任一者為下述式(I)所表示的非富勒烯化合物, 包含B 1的化合物的漢森溶解度參數的極性項P(B 1)(MPa 0.5)與所述第二溶媒的漢森溶解度參數的極性項P(S2)(MPa 0.5)滿足下述式(III)所表示的條件,所述B 1是將下述式(I)所表示的非富勒烯化合物中的B 1與A 1的鍵切斷而形成的末端利用氫原子封端。 A 1-B 1-(A 1)n   (I) |P(B 1)-P(S2)|>3.2(MPa 0.5)   (III) (式(I)中, A 1表示吸電子性的基, B 1表示包含一個以上的構成單元、並構成π共軛系的基, n為0或1,於n為1的情況下,存在兩個的A 1可相同亦可不同, 包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物與包含B 1的化合物滿足下述式(II)所表示的條件; E HOMO(B 1)-E HOMO(A 1)>2.0(eV)   (II) (式(II)中, E HOMO(B 1)(eV)表示包含將B 1與A 1的鍵切斷而形成的末端利用氫原子封端的B 1的化合物(以下,有時簡稱為包含B 1的化合物)的最高佔據軌域的能階的值, E HOMO(A 1)(eV)表示包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物(以下,有時簡稱為包含A 1的化合物)的最高佔據軌域的能階的值)) The ink composition of this embodiment is the following ink composition, which includes: semiconductor materials, including at least one p-type semiconductor material and at least one n-type semiconductor material; and two or more solvents, including the first solvent and the above-mentioned A second solvent with a higher boiling point than the first solvent, and either the p-type semiconductor material or the n-type semiconductor material is a non-fullerene compound represented by the following formula (I), including The polar term P (B 1 ) (MPa 0.5 ) of the Hansen solubility parameter of the compound B 1 and the polar term P (S2) (MPa 0.5 ) of the Hansen solubility parameter of the second solvent satisfy the following formula (III) According to the conditions shown, the terminal B 1 formed by cutting the bond between B 1 and A 1 in the non-fullerene compound represented by the following formula (I) is terminated with a hydrogen atom. A 1 -B 1 -(A 1 )n (I) |P(B 1 )-P(S2)|>3.2(MPa 0.5 ) (III) (In formula (I), A 1 represents an electron-withdrawing group , B 1 represents a base containing one or more structural units and constituting a π conjugated system, n is 0 or 1, and when n is 1, the two A 1s may be the same or different, including A 1 A compound of A 1 whose terminal is terminated with a hydrogen atom formed by cleaving the bond with B 1 and a compound containing B 1 satisfy the conditions represented by the following formula (II); E HOMO (B 1 )-E HOMO (A 1 )>2.0 (eV) (II) (In formula (II), E HOMO (B 1 ) (eV) represents a compound containing B 1 whose terminal is terminated with a hydrogen atom, formed by cutting the bond between B 1 and A 1 (Hereinafter, sometimes simply referred to as a compound containing B 1 ) The value of the energy level of the highest occupied orbital, E HOMO (A 1 ) (eV), represents the terminal utilization formed by cutting the bond between A 1 and B 1 The value of the energy level of the highest occupied orbit of a compound of A 1 terminated by a hydrogen atom (hereinafter sometimes referred to as a compound containing A 1 )))

以下,對作為本實施方式的油墨組成物可包含的半導體材料的化合物進行詳細說明。Hereinafter, compounds as semiconductor materials that can be included in the ink composition of this embodiment will be described in detail.

1.非富勒烯化合物 首先,對本實施方式的油墨組成物中可用作半導體材料的化合物進行說明。本實施方式的非富勒烯化合物可適合用作光電轉換元件的特別是活性層的n型半導體材料。 1.Non-fullerene compounds First, compounds usable as semiconductor materials in the ink composition of this embodiment will be described. The non-fullerene compound of this embodiment can be suitably used as an n-type semiconductor material of a photoelectric conversion element, especially an active layer.

再者,如已說明般,於活性層中,非富勒烯化合物作為p型半導體材料及n型半導體材料中的哪一個發揮功能可根據所選擇的化合物的最高佔據軌域(最高佔據分子軌域(Highest Occupied Molecular Orbital,HOMO))的能階的值或最低未佔軌域(最低未佔分子軌域(Lowest Unoccupied Molecular Orbital,LUMO))的能階的值相對地決定。Furthermore, as already explained, whether the non-fullerene compound functions as a p-type semiconductor material or an n-type semiconductor material in the active layer depends on the highest occupied orbital (highest occupied molecular orbital) of the selected compound. The value of the energy level of the domain (Highest Occupied Molecular Orbital, HOMO) or the value of the energy level of the lowest unoccupied orbital (Lowest Unoccupied Molecular Orbital (LUMO)) is relatively determined.

活性層中所含的p型半導體材料的HOMO及LUMO的能階的值與n型半導體材料的HOMO及LUMO的能階的值的關係可適宜設定於可使光電轉換元件(光檢測元件)發揮功能的範圍。The relationship between the HOMO and LUMO energy level values of the p-type semiconductor material and the HOMO and LUMO energy level values of the n-type semiconductor material contained in the active layer can be appropriately set so that the photoelectric conversion element (photodetection element) can function range of functions.

本實施方式的非富勒烯化合物為下述式(I)所表示的化合物。 A 1-B 1-(A 1)n   (I) The non-fullerene compound of this embodiment is a compound represented by the following formula (I). A 1 -B 1 - (A 1 )n (I)

式(I)中, A 1表示吸電子性的基, B 1表示包含一個以上的構成單元、並構成π共軛系的基, n為0或1,於n為1的情況下,存在兩個的A 1可相同亦可不同, 包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物與包含B 1的化合物滿足下述式(II)所表示的條件。 E HOMO(B 1)-E HOMO(A 1)>2.0(eV)   (II) In the formula (I), A 1 represents an electron-withdrawing group, and B 1 represents a group containing one or more structural units and constituting a π conjugated system. n is 0 or 1. When n is 1, there are two Each A 1 may be the same or different, and the compound containing A 1 whose terminal is terminated with a hydrogen atom formed by cutting the bond between A 1 and B 1 satisfies the following formula ( II ) represented by the compound containing B 1 condition. E HOMO (B 1 )-E HOMO (A 1 )>2.0 (eV) (II)

式(II)中, E HOMO(B 1)(eV)表示包含將B 1與A 1的鍵切斷而形成的末端利用氫原子封端的B 1的化合物的最高佔據軌域的能階的值, E HOMO(A 1)(eV)表示包含將B 1與A 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物的最高佔據軌域的能階的值。 In the formula (II), E HOMO (B 1 ) (eV) represents the value of the energy level of the highest occupied orbital of a compound containing B 1 whose terminal is terminated with a hydrogen atom and is formed by cutting the bond between B 1 and A 1 , E HOMO (A 1 ) (eV) represents the value of the energy level of the highest occupied orbital of a compound containing A 1 whose terminal is terminated with a hydrogen atom, which is formed by cutting the bond between B 1 and A 1 .

本實施方式的非富勒烯化合物為所述式(I)所表示的非富勒烯化合物,且為作為拉電子性的一價基的A 1與作為一價基或二價基的B 1的一端或兩端鍵結而成的化合物。 The non-fullerene compound of this embodiment is a non-fullerene compound represented by the formula (I), and is composed of A 1 which is an electron-withdrawing monovalent group and B 1 which is a monovalent group or a divalent group. A compound formed by bonding at one or both ends.

於本實施方式的非富勒烯化合物中,較佳為於不僅包括B 1,而且包括A 1在內的整個非富勒烯化合物中均構成π共軛系。 In the non-fullerene compound of this embodiment, it is preferable that not only B 1 but also A 1 be included in the entire non-fullerene compound to form a π conjugated system.

於本實施方式的所述式(I)所表示的非富勒烯化合物中,包含A 1的化合物與包含B 1的化合物滿足所述式(II)所表示的條件。換言之,所述式(I)所表示的非富勒烯化合物構成為包含B 1的化合物的最高佔據軌域(HOMO)的能階的值(E HOMO(B 1))與包含A 1的化合物的最高佔據軌域(HOMO)的能階的值(E HOMO(A 1))的差大於2.0 eV。 Among the non-fullerene compounds represented by the formula (I) in this embodiment, the compound containing A 1 and the compound containing B 1 satisfy the conditions represented by the formula (II). In other words, the non-fullerene compound represented by the formula (I) is configured such that the energy level value (E HOMO (B 1 )) of the highest occupied orbital (HOMO) of the compound containing B 1 is equal to the value of the energy level of the compound containing A 1 The difference in the value of the energy level of the highest occupied orbital (HOMO) (E HOMO (A 1 )) is greater than 2.0 eV.

於本實施方式的非富勒烯化合物中,包含B 1的化合物的最高佔據軌域的能階的值(E HOMO(B 1))與包含A 1的化合物的最高佔據軌域的能階的值(E HOMO(A 1))的差可增大基底狀態下的電荷的偏移且可於分子間產生強烈的相互作用,因此就提高電荷傳輸性、進而進一步提高EQE的觀點而言,較佳為大於2.0 eV,更佳為大於2.2 eV。 In the non-fullerene compound of this embodiment, the value of the energy level of the highest occupied orbital of the compound containing B 1 (E HOMO (B 1 )) and the energy level of the highest occupied orbital of the compound containing A 1 are The difference in value (E HOMO (A 1 )) can increase the charge shift in the ground state and can produce strong interactions between molecules. Therefore, from the perspective of improving charge transport and further improving EQE, it is relatively Preferably, it is greater than 2.0 eV, and more preferably, it is greater than 2.2 eV.

最高佔據軌域(HOMO)的能階的值可使用先前公知的任何適合的計算科學方法、例如高斯(Gaussian)公司製造的量子化學計算程式即高斯(Gaussian)16來算出。具體而言,關於將B 1的末端利用氫原子封端的化合物及/或將A 1的末端利用氫原子封端的化合物,可使用所述量子化學計算程式並藉由B3LYP水準的密度泛函法進行結構最佳化,將使用6-31G作為基底函數而算出的值設為最高佔據軌域的能階的值(單位:eV)。 The value of the energy level of the highest occupied orbital (HOMO) can be calculated using any previously known suitable computational science method, such as Gaussian 16, a quantum chemical calculation program produced by Gaussian Company. Specifically, for a compound in which the terminal of B 1 is terminated with a hydrogen atom and/or a compound in which the terminal of A 1 is terminated with a hydrogen atom, the above-mentioned quantum chemical calculation program can be used and the density functional method at the B3LYP level can be used. For structural optimization, the value calculated using 6-31G as the basis function was set to the value of the energy level of the highest occupied orbital (unit: eV).

於所述式(I)中,於n為1的情況且存在兩個的A 1彼此不同的情況下,可將分別切出兩個A 1而產生的末端利用氫原子封端的兩個化合物中的最高佔據軌域的能階的值的平均值設為包含A 1的化合物的最高佔據軌域能的值。 In the formula (I), when n is 1 and there are two A 1's that are different from each other, two compounds in which the terminals generated by cutting out two A 1's are terminated with hydrogen atoms can be used. The average value of the energy levels of the highest occupied orbitals is set to the value of the highest occupied orbital energy of the compound containing A 1 .

將E HOMO(A 1)與E HOMO(B 1)的計算例示於下述表1~表3中。 Calculation examples of E HOMO (A 1 ) and E HOMO (B 1 ) are shown in the following Tables 1 to 3.

[表1] (表1) 包含A 1的化合物 E HOMO(A 1) [eV] -7.61 -7.20 -7.62 -7.32 [Table 1] (Table 1) Compounds containing A 1 E HOMO (A 1 ) [eV] -7.61 -7.20 -7.62 -7.32

[表2] (表2) 包含B 1的化合物 E HOMO(B 1) [eV] -4.77 -4.93 -4.41 -4.97 -4.98 [Table 2] (Table 2) Compounds containing B 1 E HOMO (B 1 ) [eV] -4.77 -4.93 -4.41 -4.97 -4.98

[表3] (表3) 包含B 1的化合物 E HOMO(B 1) [eV] -4.63 -4.77 -4.68 -4.80 [Table 3] (Table 3) Compounds containing B 1 E HOMO (B 1 ) [eV] -4.63 -4.77 -4.68 -4.80

以下,對可構成本實施方式的非富勒烯化合物的A 1及B 1、以及非富勒烯化合物的具體例進行說明。 Hereinafter, A 1 and B 1 that can constitute the non-fullerene compound of this embodiment, and specific examples of the non-fullerene compound will be described.

(1)關於A 1於本實施方式的非富勒烯化合物中,A 1為拉電子性的一價基。於存在兩個A 1的情況下,存在兩個的A 1可相同亦可不同。就使非富勒烯化合物的合成更容易的觀點而言,存在兩個的A 1較佳為相同的基。 (1) About A 1 In the non-fullerene compound of this embodiment, A 1 is an electron-withdrawing monovalent group. When there are two A 1 's, the two A 1's may be the same or different. From the viewpoint of making the synthesis of the non-fullerene compound easier, the two A 1 's present are preferably the same group.

作為A 1的例子,可列舉-CH=C(-CN) 2所表示的基及下述式(a-1)~式(a-9)所表示的基。 Examples of A 1 include groups represented by -CH=C(-CN) 2 and groups represented by the following formulas (a-1) to formula (a-9).

[化6] [Chemical 6]

式(a-1)~式(a-7)中, T表示可具有取代基的碳環、或可具有取代基的雜環。碳環及雜環可為單環,亦可為縮合環。於該些環具有多個取代基的情況下,存在多個的取代基可相同亦可不同。 In formula (a-1) to formula (a-7), T represents a carbocyclic ring which may have a substituent, or a heterocyclic ring which may have a substituent. Carbocyclic and heterocyclic rings may be single rings or condensed rings. When the rings have multiple substituents, the multiple substituents may be the same or different.

作為T所表示的可具有取代基的碳環的例子,可列舉芳香族碳環,較佳為芳香族碳環。作為T所表示的可具有取代基的碳環的具體例,可列舉苯環、萘環、蒽環、稠四苯環、稠五苯環、芘環及菲環,較佳為苯環、萘環及菲環,更佳為苯環及萘環,進而佳為苯環。該些環可具有取代基。Examples of the carbocyclic ring represented by T which may have a substituent include an aromatic carbocyclic ring, and an aromatic carbocyclic ring is preferred. Specific examples of the optionally substituted carbocyclic ring represented by T include benzene ring, naphthalene ring, anthracene ring, condensed tetraphenyl ring, condensed pentaphenyl ring, pyrene ring and phenanthrene ring, preferably benzene ring, naphthalene ring ring and phenanthrene ring, more preferably benzene ring and naphthalene ring, still more preferably benzene ring. These rings may have substituents.

作為T所表示的可具有取代基的雜環的例子,可列舉芳香族雜環,較佳為芳香族碳環。作為T所表示的可具有取代基的雜環的具體例,可列舉吡啶環、噠嗪環、嘧啶環、吡嗪環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環及噻吩並噻吩環,較佳為噻吩環及吡啶環、吡嗪環、噻唑環及噻吩並噻吩環,更佳為噻吩環。該些環可具有取代基。Examples of the heterocyclic ring represented by T which may have a substituent include an aromatic heterocyclic ring, and an aromatic carbocyclic ring is preferred. Specific examples of the optionally substituted heterocyclic ring represented by T include a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a pyrrole ring, a furan ring, a thiophene ring, an imidazole ring, an oxazole ring, and a thiazole ring. and thienothiophene ring, preferably thiophene ring and pyridine ring, pyrazine ring, thiazole ring and thienothiophene ring, more preferably thiophene ring. These rings may have substituents.

作為T所表示的碳環或雜環可具有的取代基的例子,可列舉鹵素原子、烷基、烷基氧基、芳基、氰基及一價雜環基,較佳為氟原子、氯原子、碳原子數1~6的烷基氧基及/或碳原子數1~6的烷基。Examples of the substituent that the carbocyclic ring or heterocyclic ring represented by T may have include a halogen atom, an alkyl group, an alkyloxy group, an aryl group, a cyano group, and a monovalent heterocyclic group. Preferred are a fluorine atom and a chlorine atom. atom, an alkyloxy group having 1 to 6 carbon atoms and/or an alkyl group having 1 to 6 carbon atoms.

X 4、X 5及X 6分別獨立地表示氧原子、硫原子、亞烷基或=C(-CN) 2所表示的基,較佳為氧原子、硫原子或=C(-CN) 2所表示的基。 X 4 , X 5 and the basis represented.

X 7表示氫原子或鹵素原子、氰基、可具有取代基的烷基、可具有取代基的烷基氧基、可具有取代基的芳基或一價雜環基。X 7較佳為氰基。 X 7 represents a hydrogen atom or a halogen atom, a cyano group, an alkyl group which may have a substituent, an alkyloxy group which may have a substituent, an aryl group which may have a substituent, or a monovalent heterocyclic group. X 7 is preferably cyano group.

R a1、R a2、R a3、R a4及R a5分別獨立地表示氫原子、可具有取代基的烷基、鹵素原子、可具有取代基的烷基氧基、可具有取代基的芳基或一價雜環基,較佳為可具有取代基的烷基或可具有取代基的芳基。 R a1 , R a2 , R a3 , R a4 and R a5 each independently represent a hydrogen atom, an alkyl group which may have a substituent, a halogen atom, an alkyloxy group which may have a substituent, an aryl group which may have a substituent, or The monovalent heterocyclic group is preferably an alkyl group which may have a substituent or an aryl group which may have a substituent.

[化7] [Chemical 7]

於式(a-8)及式(a-9)中, R a6及R a7分別獨立地表示氫原子、鹵素原子、可具有取代基的烷基、可具有取代基的環烷基、可具有取代基的烷基氧基、可具有取代基的環烷基氧基、可具有取代基的一價芳香族碳環基或可具有取代基的一價芳香族雜環基,存在多個的R a6及R a7彼此可相同亦可不同。 In formula (a-8) and formula (a-9), R a6 and R a7 each independently represent a hydrogen atom, a halogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, or a cycloalkyl group which may have a substituent. An alkyloxy group with a substituent, a cycloalkyloxy group that may have a substituent, a monovalent aromatic carbocyclic group that may have a substituent, or a monovalent aromatic heterocyclic group that may have a substituent, there are multiple R a6 and R a7 may be the same as or different from each other.

作為A 1所表示的拉電子性的一價基的具體例,可列舉下述式(a-1-1)~式(a-1-4)、以及式(a-5-1)、式(a-6-1)、式(a-6-2)及式(a-7-1)所表示的基。 Specific examples of the electron-withdrawing monovalent group represented by A 1 include the following formulas (a-1-1) to formula (a-1-4), and formula (a-5-1) and formula (a-6-1), the group represented by formula (a-6-2) and formula (a-7-1).

[化8] [Chemical 8]

式(a-1-1)~式(a-1-4)、以及式(a-5-1)、式(a-6-1)、式(a-6-2)及式(a-7-1)中, 存在多個的R a10分別獨立地表示氫原子或取代基, R a1、R a2、R a3、R a4、及R a5分別獨立地與上述為相同含義。 Formula (a-1-1) to Formula (a-1-4), and Formula (a-5-1), Formula (a-6-1), Formula (a-6-2) and Formula (a- In 7-1), the plurality of R a10 each independently represents a hydrogen atom or a substituent, and R a1 , R a2 , R a3 , R a4 , and R a5 each independently have the same meaning as above.

R a10較佳為氫原子、鹵素原子、烷基氧基、氰基或烷基。R a1、R a2、R a3、R a4、及R a5較佳為可具有取代基的烷基或可具有取代基的芳基。 R a10 is preferably a hydrogen atom, a halogen atom, an alkyloxy group, a cyano group or an alkyl group. R a1 , R a2 , R a3 , R a4 , and R a5 are preferably an alkyl group which may have a substituent or an aryl group which may have a substituent.

A 1及A 2較佳為分別獨立地為包含選自由氰基、羰基及硫代羰基所組成的群組中的一種以上的拉電子性的基。 It is preferred that A 1 and A 2 each independently include one or more electron-withdrawing groups selected from the group consisting of a cyano group, a carbonyl group and a thiocarbonyl group.

作為A 1所表示的拉電子性的一價基的較佳例,可列舉下述式所表示的基。 Preferred examples of the electron-withdrawing monovalent group represented by A 1 include groups represented by the following formula.

[化9] [Chemical 9]

[化10] [Chemical 10]

(2)關於B 1具體而言,B 1為包含彼此進行π鍵結的一對以上的原子、且π電子雲於B 1整體中擴展的基。 (2) Regarding B 1 specifically, B 1 is a group including one or more pairs of atoms that are π-bonded to each other, and a π electron cloud is spread throughout B 1 .

B 1較佳為具有下述式所表示的結構。 [化11] B 1 preferably has a structure represented by the following formula. [Chemical 11]

所述式中, Ar a、Ar b及Ar c分別獨立地表示可具有取代基、可包含多個環結構且多個環結構可進行縮環的芳香族碳環或可具有取代基、可包含多個環結構且多個環結構可進行縮環的芳香族雜環, Ar d及Ar e分別獨立地表示可具有取代基、可包含多個環結構且多個環結構可進行縮環的二價芳香族碳環基或可具有取代基、可包含多個環結構且多個環結構可進行縮環的二價芳香族雜環基, 於Ar a、Ar b、Ar c、Ar d及Ar e分別存在多個的情況下,存在多個的Ar a、Ar b、Ar c、Ar d及Ar e分別可相同亦可不同, x、y、z為0、1、2或3, i為0、1、2或3, k為0或1~10的整數, m為0或1~10的整數。 In the formula, Ar a , Ar b and Ar c each independently represent an aromatic carbocyclic ring which may have substituents and may contain multiple ring structures, and the multiple ring structures may be condensed, or may have substituents and may contain An aromatic heterocycle with multiple ring structures and multiple ring structures that can be ring-condensed. Ar d and Ar e each independently represent an aromatic heterocycle that may have a substituent, may contain multiple ring structures, and the multiple ring structures can be ring-condensed. A valent aromatic carbocyclic group or a divalent aromatic heterocyclic group that may have a substituent, may include multiple ring structures, and the multiple ring structures may be condensed, in A a , Ar b , Arc , Ar d and Ar When there are multiple e respectively, the multiple A a , Ar b , Arc , Ar d and A e may be the same or different respectively. x, y and z are 0, 1, 2 or 3, and i is 0, 1, 2 or 3, k is 0 or an integer from 1 to 10, m is 0 or an integer from 1 to 10.

更具體而言,B 1較佳為包含一個以上的構成單元、並構成π共軛系的一價基或二價基。此處,所謂作為一價基的B 1是指作為二價基的B 1的末端中的一端經氫原子封端的基。 More specifically, B 1 is preferably a monovalent group or a divalent group that contains one or more structural units and constitutes a π conjugated system. Here, B 1 as a monovalent group refers to a group in which one of the ends of B 1 as a divalent group is terminated with a hydrogen atom.

作為B 1中所含的一個以上的構成單元中的至少一個的第一構成單元(以下,亦稱為第一構成單元CU1)較佳為下述式(IV)所表示的構成單元,且該第一構成單元以外的剩餘的第二構成單元(以下,亦稱為第二構成單元CU2)較佳為包含不飽和鍵的二價基、二價芳香族碳環基或二價芳香族雜環基。 The first structural unit (hereinafter also referred to as the first structural unit CU1) that is at least one of the one or more structural units included in B 1 is preferably a structural unit represented by the following formula (IV), and the first structural unit is preferably represented by the following formula (IV). The remaining second structural unit (hereinafter, also referred to as the second structural unit CU2) other than the first structural unit is preferably a divalent group containing an unsaturated bond, a divalent aromatic carbocyclic group or a divalent aromatic heterocyclic group. base.

式(I)中,於第一構成單元存在兩個以上的情況下,存在兩個以上的第一構成單元可相同亦可不同,於第二構成單元存在兩個以上的情況下,存在兩個以上的第二構成單元可相同亦可不同。In formula (I), when there are two or more first structural units, the two or more first structural units may be the same or different. When there are two or more second structural units, there are two The above second structural units may be the same or different.

[化12] [Chemical 12]

式(IV)中, Ar 1及Ar 2分別獨立地表示可具有取代基的芳香族碳環或可具有取代基的芳香族雜環, Y表示直接鍵結、-C(=O)-所表示的基或氧原子, R分別獨立地表示: 氫原子、 鹵素原子、 可具有取代基的烷基、 可具有取代基的環烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的環烷基氧基、 可具有取代基的芳基氧基、 可具有取代基的烷硫基、 可具有取代基的環烷硫基、 可具有取代基的芳硫基、 可具有取代基的一價雜環基、 可具有取代基的取代胺基、 可具有取代基的醯基、 可具有取代基的亞胺殘基、 可具有取代基的醯胺基、 可具有取代基的醯亞胺基、 可具有取代基的取代氧基羰基、 可具有取代基的烯基、 可具有取代基的環烯基、 可具有取代基的炔基、 可具有取代基的環炔基、 氰基、 硝基、 -C(=O)-R a所表示的基、或 -SO 2-R b所表示的基, R a及R b分別獨立地表示: 氫原子、 可具有取代基的烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的芳基氧基、或 可具有取代基的一價雜環基。 存在多個的R彼此可相同亦可不同。 In the formula (IV), Ar 1 and Ar 2 each independently represent an aromatic carbocyclic ring that may have a substituent or an aromatic heterocyclic ring that may have a substituent, Y represents a direct bond, and -C(=O)- represents of a group or an oxygen atom, R independently represents: a hydrogen atom, a halogen atom, an alkyl group that may have a substituent, a cycloalkyl group that may have a substituent, an aryl group that may have a substituent, an alkyl group that may have a substituent Oxy group, optionally substituted cycloalkyloxy group, optionally substituted aryloxy group, optionally substituted alkylthio group, optionally substituted cycloalkylthio group, optionally substituted arylthio group group, a monovalent heterocyclic group that may have a substituent, a substituted amine group that may have a substituent, a acyl group that may have a substituent, an imine residue that may have a substituent, a amide group that may have a substituent, amide group having a substituent, a substituted oxycarbonyl group that may have a substituent, an alkenyl group that may have a substituent, a cycloalkenyl group that may have a substituent, an alkynyl group that may have a substituent, a ring that may have a substituent Alkynyl group, cyano group, nitro group, a group represented by -C(=O)-R a , or a group represented by -SO 2 -R b , R a and R b each independently represent: a hydrogen atom, which may have an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkyloxy group which may have a substituent, an aryloxy group which may have a substituent, or a monovalent heterocyclic group which may have a substituent. Multiple R's may be the same or different from each other.

式(IV)中,可構成Ar 1及Ar 2的芳香族碳環較佳為苯環及萘環,更佳為苯環及萘環,進而佳為苯環。該些環可具有取代基。 In the formula (IV), the aromatic carbocyclic ring constituting Ar 1 and Ar 2 is preferably a benzene ring and a naphthalene ring, more preferably a benzene ring and a naphthalene ring, and even more preferably a benzene ring. These rings may have substituents.

可構成Ar 1及Ar 2的芳香族雜環較佳為噁二唑環、噻二唑環、噻唑環、噁唑環、噻吩環、噻吩並噻吩環、苯並噻吩環、吡咯環、磷雜環戊二烯環、呋喃環、吡啶環、吡嗪環、嘧啶環、三嗪環、噠嗪環、喹啉環、異喹啉環、咔唑環、及二苯並磷雜環戊二烯環、以及啡噁嗪環、啡噻嗪環、二苯並硼雜環戊二烯環、二苯並噻咯環、及苯並吡喃環。該些環可具有取代基。 The aromatic heterocycles that can constitute Ar 1 and Ar 2 are preferably oxadiazole ring, thiadiazole ring, thiazole ring, oxazole ring, thiophene ring, thienothiophene ring, benzothiophene ring, pyrrole ring, phosphatide ring Cyclopentadiene ring, furan ring, pyridine ring, pyrazine ring, pyrimidine ring, triazine ring, pyridazine ring, quinoline ring, isoquinoline ring, carbazole ring, and dibenzophospholane ring, as well as phenoxazine ring, phenthiazine ring, dibenzoborole ring, dibenzosilole ring, and benzopyran ring. These rings may have substituents.

R所表示的鹵素原子較佳為氟原子。The halogen atom represented by R is preferably a fluorine atom.

R所表示的可具有取代基的烷基較佳為可具有取代基的碳原子數1~20的烷基,更佳為可具有取代基的碳原子數1~15的烷基,進而佳為可具有取代基的碳原子數1~12的烷基,進而更佳為可具有取代基的碳原子數1~10的烷基。The alkyl group which may have a substituent represented by R is preferably an alkyl group having 1 to 20 carbon atoms which may have a substituent, more preferably an alkyl group having 1 to 15 carbon atoms which may have a substituent, and still more preferably An alkyl group having 1 to 12 carbon atoms which may have a substituent, and more preferably an alkyl group having 1 to 10 carbon atoms which may have a substituent.

R所表示的烷基可具有的取代基較佳為鹵素原子,更佳為氟原子及/或氯原子。The substituent that the alkyl group represented by R may have is preferably a halogen atom, more preferably a fluorine atom and/or a chlorine atom.

R所表示的可具有取代基的環烷基較佳為可具有取代基的碳原子數3~10的環烷基,更佳為可具有取代基的碳原子數5~6的環烷基,進而佳為可具有取代基的環己基。The cycloalkyl group which may have a substituent represented by R is preferably a cycloalkyl group having 3 to 10 carbon atoms which may have a substituent, and more preferably a cycloalkyl group having 5 to 6 carbon atoms which may have a substituent. Furthermore, a cyclohexyl group which may have a substituent is preferable.

R所表示的可具有取代基的芳基較佳為可具有取代基的碳原子數6~15的芳基,更佳為可具有取代基的苯基或萘基。The optionally substituted aryl group represented by R is preferably an optionally substituted aryl group having 6 to 15 carbon atoms, more preferably an optionally substituted phenyl group or naphthyl group.

R所表示的芳基可具有的取代基較佳為鹵素原子(例如氯原子、氟原子)、碳原子數1~12的烷基(例如甲基、三氟甲基、第三丁基、辛基、十二烷基)、碳原子數1~12的烷基氧基(例如甲氧基、乙氧基、辛基氧基)、碳原子數1~12的烷基磺醯基(例如十二烷基磺醯基)、及/或氰基。The substituent that the aryl group represented by R may have is preferably a halogen atom (for example, a chlorine atom, a fluorine atom), an alkyl group having 1 to 12 carbon atoms (for example, a methyl group, a trifluoromethyl group, a tert-butyl group, an octyl group, or a halogen atom). group, dodecyl), alkyloxy group with 1 to 12 carbon atoms (such as methoxy, ethoxy, octyloxy), alkylsulfonyl group with 1 to 12 carbon atoms (such as ten dialkyl sulfonyl group), and/or cyano group.

R所表示的可具有取代基的烷基氧基較佳為可具有取代基的碳原子數1~10的烷基氧基,更佳為可具有取代基的碳原子數1~8的烷基氧基,進而佳為甲氧基、乙氧基、丙基氧基、3-甲基丁基氧基、或2-乙基己基氧基,該些基可具有取代基。The optionally substituted alkyloxy group represented by R is preferably an optionally substituted alkyloxy group having 1 to 10 carbon atoms, more preferably an optionally substituted alkyloxy group having 1 to 8 carbon atoms. The oxygen group is more preferably a methoxy group, an ethoxy group, a propyloxy group, a 3-methylbutyloxy group, or a 2-ethylhexyloxy group, and these groups may have a substituent.

R所表示的可具有取代基的芳基氧基較佳為可具有取代基的碳原子數6~15的芳基氧基,更佳為可具有取代基的苯基氧基或蒽基氧基。The aryloxy group which may have a substituent represented by R is preferably an aryloxy group having 6 to 15 carbon atoms which may have a substituent, and more preferably a phenyloxy or anthracenyloxy group which may have a substituent. .

R所表示的芳基氧基可具有的取代基較佳為碳原子數1~12的烷基,更佳為碳原子數1~6的烷基,進而佳為甲基。The substituent that the aryloxy group represented by R may have is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably a methyl group.

R所表示的可具有取代基的烷硫基較佳為可具有取代基的碳原子數1~6的烷硫基,更佳為可具有取代基的碳原子數1~3的烷硫基,進而佳為可具有取代基的甲硫基或丙硫基。The optionally substituted alkylthio group represented by R is preferably an optionally substituted alkylthio group having 1 to 6 carbon atoms, more preferably an optionally substituted alkylthio group having 1 to 3 carbon atoms, More preferably, it is a methylthio group or a propylthio group which may have a substituent.

R所表示的可具有取代基的芳硫基較佳為可具有取代基的碳原子數6~10的芳硫基,更佳為可具有取代基的苯硫基。The arylthio group which may have a substituent represented by R is preferably an arylthio group having 6 to 10 carbon atoms which may have a substituent, and more preferably a phenylthio group which may have a substituent.

R所表示的芳硫基可具有的取代基較佳為碳原子數1~12的烷基,更佳為碳原子數1~6的烷基,進而佳為甲基。The substituent that the arylthio group represented by R may have is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably a methyl group.

R所表示的可具有取代基的一價雜環基較佳為可具有取代基的為5員或6員的一價雜環基。作為為5員的一價雜環基的例子,可列舉:噻吩基、呋喃基、吡咯基、咪唑基、吡唑基、噻唑基、異噻唑基、噁唑基、異噁唑基、及吡咯啶基。作為為6員的一價雜環基的例子,可列舉:吡啶基、吡嗪基、嘧啶基、噠嗪基、哌啶基、哌嗪基、嗎啉基、及四氫吡喃基。The optionally substituted monovalent heterocyclic group represented by R is preferably a 5- or 6-membered monovalent heterocyclic group that may have a substituent. Examples of the 5-membered monovalent heterocyclic group include: thienyl, furyl, pyrrolyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, and pyrrole alkylinyl. Examples of the 6-membered monovalent heterocyclic group include pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, piperidinyl, piperazinyl, morpholinyl, and tetrahydropyranyl.

R所表示的可具有取代基的一價雜環基更佳為噻吩基、呋喃基、噻唑基、噁唑基、吡啶基、或吡嗪基,該些基可具有取代基。The monovalent heterocyclic group represented by R which may have a substituent is more preferably a thienyl, furyl, thiazolyl, oxazolyl, pyridyl or pyrazinyl group, and these groups may have a substituent.

R所表示的一價雜環基可具有的取代基較佳為碳原子數1~12的烷基(例如甲基、三氟甲基、丙基、己基、辛基、十二烷基)。The substituent that the monovalent heterocyclic group represented by R may have is preferably an alkyl group having 1 to 12 carbon atoms (for example, methyl, trifluoromethyl, propyl, hexyl, octyl, dodecyl).

R所表示的可具有取代基的烯基較佳為可具有取代基的碳原子數2~10的烯基,更佳為可具有取代基的碳原子數2~6的烯基,進而佳為可具有取代基的2-丙烯基或5-己烯基。The optionally substituted alkenyl group represented by R is preferably an optionally substituted alkenyl group having 2 to 10 carbon atoms, more preferably an optionally substituted alkenyl group having 2 to 6 carbon atoms, and even more preferably 2-propenyl or 5-hexenyl which may have a substituent.

R所表示的可具有取代基的環烯基較佳為可具有取代基的碳原子數3~10的環烯基,更佳為可具有取代基的碳原子數6~7的環烯基,進而佳為可具有取代基的環己烯基或環庚烯基。The cycloalkenyl group that may have a substituent represented by R is preferably a cycloalkenyl group having 3 to 10 carbon atoms that may have a substituent, and more preferably a cycloalkenyl group having 6 to 7 carbon atoms that may have a substituent, More preferably, it is a cyclohexenyl group or a cycloheptenyl group which may have a substituent.

R所表示的環烯基可具有的取代基較佳為碳原子數1~12的烷基。The substituent that the cycloalkenyl group represented by R may have is preferably an alkyl group having 1 to 12 carbon atoms.

R所表示的可具有取代基的炔基較佳為可具有取代基的碳原子數2~10的炔基,更佳為可具有取代基的碳原子數5~6的炔基,進而佳為可具有取代基的5-己炔基或3-甲基-1-丁炔基。The optionally substituted alkynyl group represented by R is preferably an optionally substituted alkynyl group having 2 to 10 carbon atoms, more preferably an optionally substituted alkynyl group having 5 to 6 carbon atoms, and even more preferably 5-hexynyl or 3-methyl-1-butynyl which may have a substituent.

R所表示的可具有取代基的環炔基較佳為可具有取代基的碳原子數6~10的環炔基,更佳為可具有取代基的碳原子數7~8的環炔基,進而佳為可具有取代基的環庚炔基或環辛炔基。The cycloalkynyl group which may have a substituent represented by R is preferably a cycloalkynyl group having 6 to 10 carbon atoms which may have a substituent, and more preferably a cycloalkynyl group having 7 to 8 carbon atoms which may have a substituent. Furthermore, a cycloheptynyl group or a cyclooctynyl group which may have a substituent is more preferred.

R所表示的環炔基可具有的取代基較佳為C1~C12烷基。The substituent that the cycloalkynyl group represented by R may have is preferably a C1 to C12 alkyl group.

存在多個的R分別獨立地較佳為可具有取代基的烷基,更佳為可具有取代基的碳原子數1~15的烷基,進而佳為可具有取代基的碳原子數1~12的烷基,進而更佳為可具有取代基的碳原子數1~10的烷基。特佳為存在多個的R均為可具有取代基的碳原子數1~10的烷基。The plurality of R's are each independently preferably an alkyl group which may have a substituent, more preferably an alkyl group having 1 to 15 carbon atoms which may have a substituent, further preferably an alkyl group having 1 to 15 carbon atoms which may have a substituent. 12 alkyl groups, and more preferably an alkyl group having 1 to 10 carbon atoms which may have a substituent. Particularly preferably, the plurality of R present are all alkyl groups having 1 to 10 carbon atoms which may have a substituent.

於R所表示的-C(=O)-R a所表示的基及-SO 2-R b所表示的基中,R a較佳為氫原子,R b較佳為可具有取代基的烷基或可具有取代基的烷基氧基,更佳為可具有取代基的碳原子數1~12的烷基或可具有取代基的碳原子數1~12的烷基氧基,進而佳為可具有取代基的碳原子數1~12的烷基或可具有取代基的碳原子數1~6的烷基氧基,進而更佳為甲基、乙基、2-甲基丙基、辛基、十二烷基、或乙氧基,該些基可具有取代基。 Among the group represented by -C(=O)-R a represented by R and the group represented by -SO 2 -R b , R a is preferably a hydrogen atom, and R b is preferably an alkane which may have a substituent. group or an alkyloxy group which may have a substituent, more preferably an alkyl group having 1 to 12 carbon atoms which may have a substituent, or an alkyloxy group having 1 to 12 carbon atoms which may have a substituent, still more preferably An alkyl group having 1 to 12 carbon atoms which may have a substituent or an alkyloxy group having 1 to 6 carbon atoms which may have a substituent, more preferably methyl, ethyl, 2-methylpropyl, octyl group, dodecyl, or ethoxy group, and these groups may have substituents.

作為式(IV)所表示的構成單元的例子,可列舉下述式所表示的構成單元。Examples of the structural unit represented by formula (IV) include structural units represented by the following formula.

[化13] [Chemical 13]

[化14] [Chemical 14]

[化15] [Chemical 15]

所述式中,R如已說明般。In the above formula, R is as already explained.

可構成B 1的所述式(IV)所表示的構成單元較佳為下述式(V)所表示的構成單元。 The structural unit represented by the formula (IV) that can constitute B 1 is preferably a structural unit represented by the following formula (V).

[化16] [Chemical 16]

式(V)中,Y及R如已說明般。X 1及X 2分別獨立地表示硫原子或氧原子,Z 1及Z 2分別獨立地表示=C(R)-所表示的基或氮原子。 In formula (V), Y and R are as already explained. X 1 and X 2 each independently represent a sulfur atom or an oxygen atom, and Z 1 and Z 2 each independently represent a group represented by =C(R)- or a nitrogen atom.

作為式(V)所表示的構成單元的例子,可列舉下述式所表示的構成單元。Examples of the structural unit represented by formula (V) include structural units represented by the following formula.

[化17] [Chemical 17]

可構成B 1的所述式(V)所表示的構成單元較佳為包含兩個以上的噻吩環且包含sp3碳原子作為構成元素的可具有取代基的二價多環式縮合環基下述式(V-1)所表示的構成單元。 The structural unit represented by the formula (V) that can constitute B1 is preferably a divalent polycyclic condensed ring group that may have a substituent and contains two or more thiophene rings and an sp3 carbon atom as a structural element as follows: The structural unit represented by formula (V-1).

[化18] [Chemical 18]

式(V-1)中,Y及R如所述定義般。In formula (V-1), Y and R are as defined above.

作為所述式(V-1)所表示的構成單元的較佳的具體例,可列舉下述式所表示的構成單元。Preferable specific examples of the structural unit represented by the formula (V-1) include structural units represented by the following formula.

[化19] [Chemical 19]

作為可構成B 1的式(V)所表示的適合的構成單元的例子,亦可列舉下述式(V-2)所表示的構成單元。 Examples of suitable structural units represented by formula (V) that can constitute B 1 include structural units represented by the following formula (V-2).

[化20] [Chemistry 20]

式(V-2)中,X 1及X 2、Z 1及Z 2以及R如已說明般。 In the formula (V-2), X 1 and X 2 , Z 1 and Z 2 and R are as described above.

作為式(V-2)所表示的構成單元的例子,可列舉下述式(V-2-1)~式(V-2-16)所表示的構成單元。Examples of the structural unit represented by formula (V-2) include structural units represented by the following formulas (V-2-1) to formula (V-2-16).

[化21] [Chemistry 21]

作為式(V-2)所表示的構成單元的較佳的具體例,可列舉下述式所表示的構成單元。Preferable specific examples of the structural unit represented by formula (V-2) include structural units represented by the following formula.

[化22] [Chemistry 22]

於本實施方式中,B 1較佳為包含一個所述式(IV)或式(V)所表示的第一構成單元(第一構成單元CU1)。 In this embodiment, B 1 preferably includes a first structural unit (first structural unit CU1 ) represented by the formula (IV) or formula (V).

作為所述式(IV)或式(V)所表示的構成單元以外的B 1可包含的第二構成單元(第二構成單元CU2),例如可列舉:包含不飽和鍵的二價基、二價芳香族碳環基及二價芳香族雜環基。 Examples of the second structural unit (second structural unit CU2) that B 1 may include other than the structural unit represented by the formula (IV) or formula (V) include: a divalent group containing an unsaturated bond, a divalent group valent aromatic carbocyclic groups and divalent aromatic heterocyclic groups.

作為第二構成單元CU2的「包含不飽和鍵的二價基」例如為-(CR=CR)n-所表示的基(R如所述定義般,n為1以上的整數;n的值較佳為1或2,更佳為1)、-C≡C-所表示的基、及伸苯基。The "bivalent group containing an unsaturated bond" as the second structural unit CU2 is, for example, a group represented by -(CR=CR)n- (R is as defined above, n is an integer greater than or equal to 1; the value of n is smaller than Preferably it is 1 or 2, more preferably 1), a group represented by -C≡C-, and a phenylene group.

作為「包含不飽和鍵的二價基」的具體例,可列舉:乙烯-1,2-二基、1,3-丁二烯-1,4-二基、乙炔-1,2-二基、及伸苯基。Specific examples of the "divalent group containing an unsaturated bond" include: ethylene-1,2-diyl, 1,3-butadiene-1,4-diyl, and acetylene-1,2-diyl. , and phenyl.

作為第二構成單元CU2的「二價芳香族雜環基」的具體例可列舉下述式(101)~式(191)所表示的基。該些基可更具有取代基。Specific examples of the "bivalent aromatic heterocyclic group" of the second structural unit CU2 include groups represented by the following formulas (101) to (191). These groups may further have substituents.

[化23] [Chemistry 23]

[化24] [Chemistry 24]

[化25] [Chemical 25]

[化26] [Chemical 26]

式(101)~式(191)中,R與上述為相同含義。In Formula (101) to Formula (191), R has the same meaning as above.

作為第二構成單元CU2的「二價芳香族碳環基」的具體例可列舉:伸苯基(例如,下述式1~式3)、萘-二基(例如,下述式4~式13)、蒽-二基(例如,下述式14~式19)、聯苯-二基(例如,下述式20~式25)、聯三苯-二基(例如,下述式26~式28)、縮合環化合物基(例如,下述式29~式35)、芴-二基(例如,下述式36~式38)、及苯並芴-二基(例如,下述式39~式46)。Specific examples of the "bivalent aromatic carbocyclic group" of the second structural unit CU2 include: phenylene group (for example, the following formula 1 to formula 3), naphthalene-diyl (for example, the following formula 4 to formula 13), anthracene-diyl (for example, the following formulas 14 to 19), biphenyl-diyl (for example, the following formulas 20 to 25), terphenyl-diyl (for example, the following formulas 26 to 25) Formula 28), condensed ring compound group (for example, the following formula 29 to formula 35), fluorene-diyl (for example, the following formula 36 to formula 38), and benzofluorene-diyl (for example, the following formula 39 ~Formula 46).

[化27] [Chemical 27]

[化28] [Chemical 28]

[化29] [Chemical 29]

[化30] [Chemical 30]

[化31] [Chemical 31]

[化32] [Chemical 32]

[化33] [Chemical 33]

[化34] [Chemical 34]

式1~式46中,R與上述為相同含義。In Formula 1 to Formula 46, R has the same meaning as above.

於本實施方式的化合物中,第二構成單元CU2較佳為選自由包含不飽和鍵的二價基及下述式(VI-1)~式(VI-12)所表示的基所組成的群組中的構成單元,其中,更佳為選自由式(VI-10)~式(VI-12)所表示的基所組成的群組中的構成單元。In the compound of this embodiment, the second structural unit CU2 is preferably selected from the group consisting of a divalent group containing an unsaturated bond and a group represented by the following formulas (VI-1) to formula (VI-12) Among the structural units in the group, the structural unit is more preferably selected from the group consisting of groups represented by formula (VI-10) to formula (VI-12).

[化35] [Chemical 35]

式(VI-1)~式(VI-12)中,X 1、X 2、Z 1、Z 2及R如所述定義般。 於存在兩個R的情況下,存在兩個的R彼此可相同亦可不同。 In Formula (VI-1) to Formula (VI-12), X 1 , X 2 , Z 1 , Z 2 and R are as defined above. When there are two R's, the two R's may be the same or different from each other.

作為第二構成單元CU2的更具體的較佳例,可列舉下述式所表示的構成單元。該些構成單元可更具有取代基。As a more specific preferred example of the second structural unit CU2, a structural unit represented by the following formula can be cited. These structural units may further have substituents.

[化36] [Chemical 36]

於本實施方式的化合物中,B 1包含一個以上的構成單元,該一個以上的構成單元中的至少一個為第一構成單元CU1,並且該第一構成單元CU1以外的剩餘的構成單元為第二構成單元CU2。 In the compound of this embodiment, B 1 contains one or more structural units, at least one of the one or more structural units is the first structural unit CU1, and the remaining structural units other than the first structural unit CU1 are the second structural units. Constituent unit CU2.

B 1中所含的第一構成單元CU1及第二構成單元CU2的組合及其排列形態以可構成π共軛系為條件,並無特別限制。 The combination and arrangement of the first structural unit CU1 and the second structural unit CU2 included in B 1 are not particularly limited, provided that a π conjugate system can be formed.

B 1較佳為具有選自由下述式(VII-1)~式(VII-16)所表示的結構所組成的群組中的任一個結構的二價基。 -CU1-          (VII-1) -CU1-CU1-        (VII-2) -CU1-CU2-        (VII-3) -CU1-CU1-CU1-      (VII-4) -CU1-CU2-CU1-      (VII-5) -CU1-CU1-CU2-      (VII-6) -CU1-CU2-CU2-      (VII-7) -CU2-CU1-CU2-      (VII-8) -CU1-CU1-CU1-CU1-    (VII-9) -CU1-CU1-CU1-CU2-    (VII-10) -CU1-CU1-CU2-CU1-    (VII-11) -CU1-CU1-CU2-CU2-    (VII-12) -CU1-CU2-CU1-CU2-    (VII-13) -CU1-CU2-CU2-CU1-    (VII-14) -CU1-CU2-CU2-CU2-    (VII-15) -CU2-CU1-CU2-CU2-    (VII-16) B 1 is preferably a divalent group having any one structure selected from the group consisting of structures represented by the following formula (VII-1) to formula (VII-16). -CU1- (VII-1) -CU1-CU1- (VII-2) -CU1-CU2- (VII-3) -CU1-CU1-CU1- (VII-4) -CU1-CU2-CU1- (VII- 5) -CU1-CU1-CU2- (VII-6) -CU1-CU2-CU2- (VII-7) -CU2-CU1-CU2- (VII-8) -CU1-CU1-CU1-CU1- (VII- 9) -CU1-CU1-CU1-CU2- (VII-10) -CU1-CU1-CU2-CU1- (VII-11) -CU1-CU1-CU2-CU2- (VII-12) -CU1-CU2-CU1 -CU2- (VII-13) -CU1-CU2-CU2-CU1- (VII-14) -CU1-CU2-CU2-CU2- (VII-15) -CU2-CU1-CU2-CU2- (VII-16)

式(VII-1)~式(VII-16)中, CU1表示第一構成單元CU1, CU2表示第二構成單元CU2。 於CU1存在兩個以上的情況下,存在兩個以上的CU1彼此可相同亦可不同,於CU2存在兩個以上的情況下,存在兩個以上的CU2彼此可相同亦可不同。 In formula (VII-1) to formula (VII-16), CU1 represents the first structural unit CU1, CU2 represents the second constituent unit CU2. When there are two or more CU1s, the two or more CU1s may be the same or different from each other. When there are two or more CU2s, the two or more CU2s may be the same or different from each other.

所述式(VII-1)~式(VII-16)中,較佳為具有式(VII-1)至式(VII-8)、式(VII-15)及式(VII-16)所表示的結構的二價基,更佳為具有式(VII-1)、式(VII-3)、式(VII-7)、式(VII-8)、式(VII-15)及式(VII-16)所表示的結構的二價基。Among the formulas (VII-1) to formula (VII-16), it is preferable that the formula is represented by formula (VII-1) to formula (VII-8), formula (VII-15) and formula (VII-16) The divalent group of the structure is preferably a formula (VII-1), formula (VII-3), formula (VII-7), formula (VII-8), formula (VII-15) and formula (VII- 16) The divalent base of the structure represented.

B 1中可包含的第一構成單元CU1及第二構成單元CU2的個數的總和通常為1以上,較佳為2以上,更佳為3以上,且通常為7以下,較佳為5以下,更佳為4以下。 B 1中可包含的第一構成單元CU1的個數通常為5以下,較佳為3以下,更佳為1。 B 1中可包含的第二構成單元CU2的個數通常為5以下,較佳為3以下,更佳為1以下。 The total number of the first structural unit CU1 and the second structural unit CU2 that can be included in B 1 is usually 1 or more, preferably 2 or more, more preferably 3 or more, and usually 7 or less, preferably 5 or less , preferably 4 or less. The number of first structural units CU1 that can be included in B 1 is usually 5 or less, preferably 3 or less, and more preferably 1. The number of second structural units CU2 that can be included in B 1 is usually 5 or less, preferably 3 or less, and more preferably 1 or less.

作為B 1的具體的較佳例,可列舉下述式所表示的二價基。 Specific preferred examples of B 1 include divalent groups represented by the following formula.

[化37] [Chemical 37]

[化38] [Chemical 38]

[化39] [Chemical 39]

[化40] [Chemical 40]

[化41] [Chemical 41]

[化42] [Chemical 42]

式中,R如所述定義般。In the formula, R is as defined above.

(3)非富勒烯化合物的具體例 作為本實施方式的式(I)所表示的非富勒烯化合物的具體例,可列舉下述式所表示的化合物。 (3) Specific examples of non-fullerene compounds Specific examples of the non-fullerene compound represented by formula (I) in this embodiment include compounds represented by the following formula.

[化43] [Chemical 43]

[化44] [Chemical 44]

[化45] [Chemical 45]

[化46] [Chemical 46]

[化47] [Chemical 47]

[化48] [Chemical 48]

作為本實施方式的式(I)所表示的非富勒烯化合物的更具體的較佳例,可列舉下述式N-1~式N-7所表示的化合物。More specific preferred examples of the non-fullerene compound represented by Formula (I) in this embodiment include compounds represented by the following formulas N-1 to Formula N-7.

[化49] [Chemical 49]

[化50] [Chemical 50]

2.非富勒烯化合物的製造方法 本實施方式的非富勒烯化合物於後述的合成例中亦示出,例如可使用可構成已說明的A 1、B 1的兩個以上的原料化合物,並藉由先前公知的任意適合的方法來製造(合成)。 2. Method for producing non-fullerene compounds. The non-fullerene compounds of this embodiment are also shown in the synthesis examples described below. For example, two or more raw material compounds that can constitute A 1 and B 1 described above can be used. And manufactured (synthesized) by any suitable method previously known.

於本實施方式中,光電轉換元件的活性層中特別是作為n型半導體材料而可僅包含本實施方式的非富勒烯化合物,亦可進一步包含本實施方式的非富勒烯化合物以外的化合物作為n型半導體材料。作為n型半導體材料可進一步包含的本實施方式的非富勒烯化合物以外的化合物可為低分子化合物亦可為高分子化合物。In this embodiment, the active layer of the photoelectric conversion element may contain only the non-fullerene compound of this embodiment, particularly as an n-type semiconductor material, or may further contain compounds other than the non-fullerene compound of this embodiment. As an n-type semiconductor material. Compounds other than the non-fullerene compound of this embodiment that may be further included as the n-type semiconductor material may be low molecular compounds or high molecular compounds.

關於作為低分子化合物的「本實施方式的非富勒烯化合物」以外的n型半導體材料(受電子性化合物)的例子,可列舉噁二唑衍生物、蒽醌二甲烷及其衍生物、苯醌及其衍生物、萘醌及其衍生物、蒽醌及其衍生物、四氰基蒽醌二甲烷及其衍生物、芴酮衍生物、二苯基二氰基乙烯及其衍生物、聯苯醌衍生物、8-羥基喹啉及其衍生物的金屬錯合物、以及2,9-二甲基-4,7-聯苯-1,10-啡啉等菲衍生物。Examples of n-type semiconductor materials (electron-accepting compounds) other than the "non-fullerene compound of the present embodiment" which are low molecular compounds include oxadiazole derivatives, anthraquinonedimethane and its derivatives, and benzene. Quinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, Benzoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, and phenanthrene derivatives such as 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline.

關於作為高分子化合物的「本實施方式的非富勒烯化合物」以外的n型半導體材料的例子,可列舉:聚乙烯基咔唑及其衍生物、聚矽烷及其衍生物、於側鏈或主鏈中具有芳香族胺結構的聚矽氧烷衍生物、聚苯胺及其衍生物、聚噻吩及其衍生物、聚吡咯及其衍生物、聚伸苯基伸乙烯基及其衍生物、聚伸噻吩基伸乙烯基及其衍生物、聚喹啉及其衍生物、聚喹噁啉及其衍生物以及聚芴及其衍生物。Examples of n-type semiconductor materials other than the "non-fullerene compound of this embodiment" which are polymer compounds include polyvinylcarbazole and its derivatives, polysilane and its derivatives, side chains or Polysiloxane derivatives with aromatic amine structure in the main chain, polyaniline and its derivatives, polythiophene and its derivatives, polypyrrole and its derivatives, polyphenylene vinylene and its derivatives, polyethylene Thiophenyl vinylethylene and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, and polyfluorene and its derivatives.

「本實施方式的非富勒烯化合物」以外的作為n型半導體材料的化合物可包含富勒烯衍生物。Compounds that are n-type semiconductor materials other than the "non-fullerene compound of this embodiment" may include fullerene derivatives.

此處,所謂富勒烯衍生物是指富勒烯(C 60富勒烯、C 70富勒烯、C 76富勒烯、C 78富勒烯及C 84富勒烯)中的至少一部分經修飾而成的化合物。換言之,是指具有附加至富勒烯骨架上的一個以上的基的化合物。以下,有時特別將C 60富勒烯的富勒烯衍生物稱為「C 60富勒烯衍生物」,將C 70富勒烯的富勒烯衍生物稱為「C 70富勒烯衍生物」。 Here, the fullerene derivative refers to at least a part of the fullerenes (C 60 fullerene, C 70 fullerene, C 76 fullerene, C 78 fullerene and C 84 fullerene). Modified compounds. In other words, it refers to a compound having one or more groups attached to a fullerene skeleton. Hereinafter, the fullerene derivative of C 60 fullerene may be specifically called "C 60 fullerene derivative", and the fullerene derivative of C 70 fullerene may be called "C 70 fullerene derivative". "thing".

「本實施方式的非富勒烯化合物」以外的可用作n型半導體材料的富勒烯衍生物只要不損害本發明的目的,則並無特別限定。Fullerene derivatives other than the "non-fullerene compound of the present embodiment" that can be used as n-type semiconductor materials are not particularly limited as long as they do not impair the object of the present invention.

作為「本實施方式的非富勒烯化合物」以外的可用作n型半導體材料的C 60富勒烯衍生物的具體例,可列舉下述化合物。 Specific examples of C 60 fullerene derivatives that can be used as n-type semiconductor materials other than the "non-fullerene compound of the present embodiment" include the following compounds.

[化51] [Chemistry 51]

式中,R如所述定義般。於存在多個R的情況下,存在多個的R可相同亦可不同。In the formula, R is as defined above. When there are multiple R's, the multiple R's may be the same or different.

作為C 70富勒烯衍生物的例子,可列舉下述化合物。 Examples of C 70 fullerene derivatives include the following compounds.

[化52] [Chemistry 52]

3.光電轉換元件 本實施方式的光電轉換元件是如下光電轉換元件,其包括陽極、陰極及設置於該陽極與該陰極之間且包含p型半導體材料及n型半導體材料的活性層,並且作為該n型半導體材料而包含已說明的本實施方式的化合物。 3. Photoelectric conversion element The photoelectric conversion element of this embodiment is a photoelectric conversion element including an anode, a cathode, and an active layer provided between the anode and the cathode and including a p-type semiconductor material and an n-type semiconductor material, and as the n-type semiconductor material The compounds of this embodiment described above are also included.

根據本實施方式的光電轉換元件,藉由具有所述結構,可有效地提高光電轉換元件的外部量子效率、光電轉換效率等特性。According to the photoelectric conversion element of this embodiment, by having the above structure, characteristics such as external quantum efficiency and photoelectric conversion efficiency of the photoelectric conversion element can be effectively improved.

此處,對於本實施方式的光電轉換元件可採用的構成例進行說明。圖1是示意性地表示本實施方式的光電轉換元件的結構的圖。Here, a structural example that can be adopted by the photoelectric conversion element of this embodiment will be described. FIG. 1 is a diagram schematically showing the structure of a photoelectric conversion element according to this embodiment.

如圖1所示,光電轉換元件10設置於支持基板11上。光電轉換元件10包括:以與支持基板11相接的方式設置的陽極12、以與陽極12相接的方式設置的電洞傳輸層13、以與電洞傳輸層13相接的方式設置的活性層14、以與活性層14相接的方式設置的電子傳輸層15、以及以與電子傳輸層15相接的方式設置的陰極16。於所述構成例中,以與陰極16相接的方式進而設置有密封構件17。 以下,對本實施方式的光電轉換元件中可包含的構成要素進行具體說明。 As shown in FIG. 1 , the photoelectric conversion element 10 is provided on the supporting substrate 11 . The photoelectric conversion element 10 includes an anode 12 provided in contact with the support substrate 11 , a hole transport layer 13 provided in contact with the anode 12 , and an active layer 13 in contact with the hole transport layer 13 . layer 14 , an electron transport layer 15 provided in contact with the active layer 14 , and a cathode 16 provided in contact with the electron transport layer 15 . In the above-described structural example, a sealing member 17 is further provided in contact with the cathode 16 . Hereinafter, the structural elements that can be included in the photoelectric conversion element of this embodiment will be described in detail.

(基板) 光電轉換元件通常形成於基板(支持基板)上。另外,亦存在進而由基板(密封基板)密封的情況。於基板上通常形成包含陽極及陰極的一對電極中的一個。基板的材料只要為於形成特別是包含有機化合物的層時不發生化學變化的材料則並無特別限定。 (Substrate) Photoelectric conversion elements are usually formed on a substrate (support substrate). In addition, it may be further sealed by a substrate (sealing substrate). One of a pair of electrodes including an anode and a cathode is usually formed on the substrate. The material of the substrate is not particularly limited as long as it does not undergo chemical change when forming a layer containing an organic compound.

作為基板的材料,例如可列舉玻璃、塑膠、高分子膜、矽。於使用不透明的基板的情況下,較佳為與設置於不透明的基板側的電極相反一側的電極(換言之,遠離不透明基板的一側的電極)為透明或半透明的電極。Examples of the material of the substrate include glass, plastic, polymer film, and silicon. When an opaque substrate is used, it is preferable that the electrode on the opposite side to the electrode provided on the opaque substrate side (in other words, the electrode on the side far from the opaque substrate) is a transparent or semi-transparent electrode.

(電極) 光電轉換元件包括作為一對電極的陽極及陰極。陽極及陰極中的至少一個電極為了使光入射,較佳為設為透明或半透明的電極。 (electrode) The photoelectric conversion element includes an anode and a cathode as a pair of electrodes. In order to allow light to enter, at least one of the anode and the cathode is preferably a transparent or translucent electrode.

作為透明或半透明的電極的材料的例子,可列舉導電性的金屬氧化物膜、半透明的金屬薄膜。具體而言,可列舉氧化銦、氧化鋅、氧化錫、及作為該些的複合物的銦錫氧化物(Indium Tin Oxide,ITO)、銦鋅氧化物(Indium Zinc Oxide,IZO)、NESA等導電性材料、金、鉑、銀、銅。作為透明或半透明的電極的材料,較佳為ITO、IZO、氧化錫。另外,作為電極,可採用使用聚苯胺及其衍生物、聚噻吩及其衍生物等有機化合物作為材料的透明導電膜。透明或半透明的電極可為陽極亦可為陰極。Examples of materials for transparent or translucent electrodes include conductive metal oxide films and translucent metal thin films. Specifically, conductive materials such as indium oxide, zinc oxide, tin oxide, and composites of these include indium tin oxide (ITO), indium zinc oxide (IZO), and NESA. Sexual materials, gold, platinum, silver, copper. As the material of the transparent or translucent electrode, ITO, IZO, and tin oxide are preferred. In addition, as the electrode, a transparent conductive film using an organic compound such as polyaniline and its derivatives, polythiophene and its derivatives as a material can be used. The transparent or translucent electrode can be an anode or a cathode.

若一對電極中的一個電極為透明或半透明,則另一電極可為透光性低的電極。作為透光性低的電極的材料的例子,可列舉金屬、及導電性高分子。作為透光性低的電極的材料的具體例,可列舉鋰、鈉、鉀、銣、銫、鎂、鈣、鍶、鋇、鋁、鈧、釩、鋅、釔、銦、鈰、釤、銪、鋱、鐿等金屬以及該些中的兩種以上的合金;或者該些中的一種以上的金屬與選自由金、銀、鉑、銅、錳、鈦、鈷、鎳、鎢及錫所組成的群組中的一種以上的金屬的合金;石墨、石墨層間化合物、聚苯胺及其衍生物、聚噻吩及其衍生物。作為合金,可列舉鎂-銀合金、鎂-銦合金、鎂-鋁合金、銦-銀合金、鋰-鋁合金、鋰-鎂合金、鋰-銦合金、及鈣-鋁合金。If one of the pair of electrodes is transparent or translucent, the other electrode may be an electrode with low light transmittance. Examples of materials for electrodes with low light transmittance include metals and conductive polymers. Specific examples of materials for electrodes with low light transmittance include lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, and europium. , ytterbium, ytterbium and other metals, and alloys of two or more of these; or one or more of these metals are selected from gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten and tin. Alloys of more than one metal in the group; graphite, graphite intercalation compounds, polyaniline and its derivatives, polythiophene and its derivatives. Examples of alloys include magnesium-silver alloys, magnesium-indium alloys, magnesium-aluminum alloys, indium-silver alloys, lithium-aluminum alloys, lithium-magnesium alloys, lithium-indium alloys, and calcium-aluminum alloys.

(活性層) 設想本實施方式的光電轉換元件所包括的活性層具有本體異質接面(bulk heterojunction)型的結構,包含p型半導體材料以及n型半導體材料,並且該活性層包含本實施方式的非富勒烯化合物作為n型半導體材料(關於詳細情況,將後述)。 (active layer) It is assumed that the active layer included in the photoelectric conversion element of this embodiment has a bulk heterojunction type structure and contains a p-type semiconductor material and an n-type semiconductor material, and the active layer contains the non-fullerene of this embodiment. The compound serves as an n-type semiconductor material (details will be described later).

於本實施方式中,活性層的厚度並無特別限定。考慮到暗電流的抑制與所產生的光電流的取出的平衡,活性層的厚度可設為任意適合的厚度。特別是就進一步減少暗電流的觀點而言,活性層的厚度較佳為100 nm以上,更佳為150 nm以上,進而佳為200 nm以上。另外,活性層的厚度較佳為10 μm以下,更佳為5 μm以下,進而佳為1 μm以下。In this embodiment, the thickness of the active layer is not particularly limited. Taking into account the balance between suppression of dark current and extraction of generated photocurrent, the thickness of the active layer can be set to any appropriate thickness. In particular, from the viewpoint of further reducing dark current, the thickness of the active layer is preferably 100 nm or more, more preferably 150 nm or more, and further preferably 200 nm or more. In addition, the thickness of the active layer is preferably 10 μm or less, more preferably 5 μm or less, further preferably 1 μm or less.

此處,作為本實施方式的活性層的材料,對可與作為已說明的本實施方式的非富勒烯化合物的n型半導體材料組合來適合使用的p型半導體材料進行說明。Here, as a material for the active layer of this embodiment, a p-type semiconductor material that can be suitably used in combination with the n-type semiconductor material that is the non-fullerene compound of this embodiment has been described.

p型半導體材料較佳為具有規定的聚苯乙烯換算的重量平均分子量的高分子化合物。The p-type semiconductor material is preferably a polymer compound having a predetermined weight average molecular weight in terms of polystyrene.

此處,所謂聚苯乙烯換算的重量平均分子量是指使用凝膠滲透層析法(gel permeation chromatography,GPC),並使用聚苯乙烯的標準試樣計算出的重量平均分子量。Here, the weight average molecular weight in terms of polystyrene refers to the weight average molecular weight calculated using gel permeation chromatography (GPC) and using a polystyrene standard sample.

特別是就提高相對於溶媒的溶解性的觀點而言,p型半導體材料的聚苯乙烯換算的重量平均分子量較佳為3000以上且500000以下。In particular, from the viewpoint of improving solubility in a solvent, the weight average molecular weight of the p-type semiconductor material in terms of polystyrene is preferably 3,000 or more and 500,000 or less.

於本實施方式中,p型半導體材料較佳為包含施體構成單元(亦稱為D構成單元)及受體構成單元(亦稱為A構成單元)的π共軛高分子化合物(亦稱為D-A型共軛高分子化合物)。再者,哪個為施體構成單元或受體構成單元可根據HOMO或LUMO的能階相對地決定。In this embodiment, the p-type semiconductor material is preferably a π-conjugated polymer compound (also called D-A type conjugated polymer compounds). Furthermore, which one is the donor constituent unit or the acceptor constituent unit can be relatively determined based on the energy level of HOMO or LUMO.

此處,施體構成單元是π電子過剩的構成單元,受體構成單元是π電子缺乏的構成單元。Here, the donor constituent unit is a constituent unit with an excess of π electrons, and the acceptor constituent unit is a constituent unit with a deficiency of π electrons.

於本實施方式中,可構成p型半導體材料的構成單元中亦包括施體構成單元與受體構成單元直接鍵結而成的構成單元、以及施體構成單元與受體構成單元經由任意適合的間隔物(基或構成單元)鍵結而成的構成單元。In this embodiment, the structural units that can constitute the p-type semiconductor material also include structural units in which the donor structural unit and the acceptor structural unit are directly bonded, and the donor structural unit and the acceptor structural unit are bonded through any suitable A structural unit formed by bonding spacers (bases or structural units).

關於作為高分子化合物的p型半導體材料,例如可列舉:聚乙烯基咔唑及其衍生物、聚矽烷及其衍生物、於側鏈或主鏈中包含芳香族胺結構的聚矽氧烷衍生物、聚苯胺及其衍生物、聚噻吩及其衍生物、聚吡咯及其衍生物、聚伸苯基伸乙烯基及其衍生物、聚伸噻吩基伸乙烯基及其衍生物、聚芴及其衍生物。Examples of p-type semiconductor materials that are polymer compounds include polyvinylcarbazole and its derivatives, polysilane and its derivatives, and polysiloxane derivatives containing an aromatic amine structure in the side chain or main chain. Polyaniline and its derivatives, polythiophene and its derivatives, polypyrrole and its derivatives, polyphenylene vinylene and its derivatives, polythienylene vinylene and its derivatives, polyfluorene and its derivatives things.

本實施方式的p型半導體材料較佳為包含下述式(VIII)所表示的構成單元的高分子化合物。於本實施方式中,下述式(VIII)所表示的構成單元通常為施體構成單元。The p-type semiconductor material of this embodiment is preferably a polymer compound containing a structural unit represented by the following formula (VIII). In this embodiment, the structural unit represented by the following formula (VIII) is generally a donor structural unit.

[化53] [Chemistry 53]

式(VIII)中,Ar 5及Ar 6表示可具有取代基的三價芳香族雜環基,Z表示下述式(Z-1)~式(Z-7)所表示的基。 In formula (VIII), Ar 5 and Ar 6 represent an optionally substituted trivalent aromatic heterocyclic group, and Z represents a group represented by the following formulas (Z-1) to (Z-7).

[化54] [Chemistry 54]

式(Z-1)~式(Z-7)中, R如所述定義般。 式(Z-1)~式(Z-7)的各個中,於存在兩個R的情況下,兩個R彼此可相同亦可不同。 In formula (Z-1) to formula (Z-7), R is as defined above. In each of Formula (Z-1) to Formula (Z-7), when two R are present, the two R may be the same as or different from each other.

於可構成Ar 5及Ar 6的芳香族雜環中,除了包含雜環本身顯示芳香族性的單環及縮合環以外,亦包含構成環的雜環本身不顯示芳香族性但於雜環中縮合有芳香環的環。 Among the aromatic heterocycles that can constitute Ar 5 and Ar 6 , in addition to the monocyclic and condensed rings in which the heterocycle itself shows aromaticity, it also includes the heterocyclic ring constituting the ring that does not show aromaticity itself but is in the heterocyclic ring. Rings with condensed aromatic rings.

可構成Ar 5及Ar 6的芳香族雜環分別可為單環,亦可為縮合環。於芳香族雜環為縮合環的情況下,構成縮合環的環的全部可為具有芳香族性的縮合環,亦可僅一部分為具有芳香族性的縮合環。於該些環具有多個取代基的情況下,該些取代基可相同亦可不同。 The aromatic heterocycles that can constitute Ar 5 and Ar 6 may each be a single ring or a condensed ring. When the aromatic heterocyclic ring is a fused ring, all of the rings constituting the fused ring may be fused rings having aromatic properties, or only a part thereof may be fused rings having aromatic properties. In the case where the rings have multiple substituents, the substituents may be the same or different.

作為可構成Ar 5及Ar 6的芳香族碳環的具體例,可列舉苯環、萘環、蒽環、稠四苯環、稠五苯環、芘環及菲環,較佳為苯環及萘環,更佳為苯環及萘環,進而佳為苯環。該些環可具有取代基。 Specific examples of the aromatic carbocyclic ring that can constitute Ar 5 and Ar 6 include benzene ring, naphthalene ring, anthracene ring, condensed tetraphenyl ring, condensed pentaphenyl ring, pyrene ring and phenanthrene ring, preferably benzene ring and A naphthalene ring is more preferably a benzene ring and a naphthalene ring, and further preferably a benzene ring. These rings may have substituents.

作為芳香族雜環的具體例,可列舉作為芳香族雜環式化合物而已說明的化合物所具有的環結構,可列舉:噁二唑環、噻二唑環、噻唑環、噁唑環、噻吩環、吡咯環、磷雜環戊二烯環、呋喃環、吡啶環、吡嗪環、嘧啶環、三嗪環、噠嗪環、喹啉環、異喹啉環、咔唑環及二苯並磷雜環戊二烯環、以及啡噁嗪環、啡噻嗪環、二苯並硼雜環戊二烯環、二苯並噻咯環及苯並吡喃環。該些環可具有取代基。Specific examples of the aromatic heterocyclic ring include the ring structures of the compounds described as aromatic heterocyclic compounds, including: oxadiazole ring, thiadiazole ring, thiazole ring, oxazole ring, and thiophene ring. , pyrrole ring, phospholane ring, furan ring, pyridine ring, pyrazine ring, pyrimidine ring, triazine ring, pyridazine ring, quinoline ring, isoquinoline ring, carbazole ring and dibenzophosphorus Heterocyclopentadiene ring, as well as phenoxazine ring, phenthiazine ring, dibenzoborole ring, dibenzosilole ring and benzopyran ring. These rings may have substituents.

式(VIII)所表示的構成單元較佳為下述式(VIII-1)、式(VIII-2)或式(VIII-3)所表示的構成單元。The structural unit represented by formula (VIII) is preferably a structural unit represented by the following formula (VIII-1), formula (VIII-2) or formula (VIII-3).

[化55] [Chemical 55]

式(VIII-1)、式(VIII-2)及式(VIII-3)中,Ar 5、Ar 6及R如所述定義般。 In formula (VIII-1), formula (VIII-2) and formula (VIII-3), Ar 5 , Ar 6 and R are as defined above.

作為式(VIII)所表示的適合的構成單元的具體例,可列舉下述式所表示的構成單元。Specific examples of suitable structural units represented by formula (VIII) include structural units represented by the following formulas.

[化56] [Chemical 56]

所述式中,R如所述定義般。 於存在兩個R的情況下,存在兩個的R可相同亦可不同。 In the above formula, R is as defined above. When there are two R's, the two R's may be the same or different.

作為式(VIII)所表示的更具體的較佳的構成單元的例子,可列舉下述式所表示的構成單元。More specific examples of preferred structural units represented by formula (VIII) include structural units represented by the following formulas.

[化57] [Chemistry 57]

於本實施方式中,作為p型半導體材料的高分子化合物較佳為包含下述式(IX)所表示的構成單元。於本實施方式中,下述式(IX)所表示的構成單元通常為受體構成單元。In this embodiment, the polymer compound as the p-type semiconductor material preferably contains a structural unit represented by the following formula (IX). In this embodiment, the structural unit represented by the following formula (IX) is usually a receptor structural unit.

[化58] [Chemical 58]

式(IX)中,Ar 7表示二價芳香族雜環基。 In formula (IX), Ar 7 represents a divalent aromatic heterocyclic group.

Ar 7所表示的二價芳香族雜環基的碳原子數通常為2~60,較佳為4~60,更佳為4~20。 The number of carbon atoms of the divalent aromatic heterocyclic group represented by Ar 7 is usually 2 to 60, preferably 4 to 60, and more preferably 4 to 20.

Ar 7所表示的二價芳香族雜環基可具有取代基。作為Ar 7所表示的二價芳香族雜環基可具有的取代基的例子,可列舉:鹵素原子、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷基氧基、可具有取代基的芳基氧基、可具有取代基的烷硫基、可具有取代基的芳硫基、可具有取代基的一價雜環基、可具有取代基的取代胺基、可具有取代基的醯基、可具有取代基的亞胺殘基、可具有取代基的醯胺基、可具有取代基的醯亞胺基、可具有取代基的取代氧基羰基、可具有取代基的烯基、可具有取代基的炔基、氰基及硝基。 The divalent aromatic heterocyclic group represented by Ar 7 may have a substituent. Examples of the substituents that the divalent aromatic heterocyclic group represented by Ar 7 may have include: a halogen atom, an alkyl group that may have a substituent, an aryl group that may have a substituent, and an alkyl group that may have a substituent. Oxy group, optionally substituted aryloxy group, optionally substituted alkylthio group, optionally substituted arylthio group, optionally substituted monovalent heterocyclic group, optionally substituted substituted amino group , a acyl group that may have a substituent, an imine residue that may have a substituent, a amide group that may have a substituent, a amide group that may have a substituent, a substituted oxycarbonyl group that may have a substituent, Alkenyl group which may have a substituent, alkynyl group which may have a substituent, a cyano group and a nitro group.

作為式(IX)所表示的構成單元,較佳為下述式(IX-1)~式(IX-10)所表示的構成單元。As the structural unit represented by formula (IX), structural units represented by the following formula (IX-1) to formula (IX-10) are preferred.

[化59] [Chemistry 59]

式(IX-1)~式(IX-10)中, X 1、X 2、Z 1、Z 2及R如所述定義般。 於存在兩個R的情況下,存在兩個的R可相同亦可不同。 In formula (IX-1) to formula (IX-10), X 1 , X 2 , Z 1 , Z 2 and R are as defined above. When there are two R's, the two R's may be the same or different.

就原料化合物的獲取性的觀點而言,式(IX-1)~式(IX-10)中的X 1及X 2較佳為均為硫原子。 From the viewpoint of the availability of the raw material compound, it is preferable that X 1 and X 2 in Formula (IX-1) to Formula (IX-10) are both sulfur atoms.

再者,如上所述,式(IX-1)~式(IX-10)所表示的構成單元通常可作為受體構成單元來發揮功能。然而並不限定於此,特別是式(IX-4)、式(IX-5)及式(IX-7)所表示的構成單元亦可作為施體構成單元來發揮功能。Furthermore, as mentioned above, the structural units represented by Formula (IX-1) to Formula (IX-10) usually function as receptor structural units. However, it is not limited to this. In particular, the structural units represented by formula (IX-4), formula (IX-5) and formula (IX-7) can also function as donor structural units.

於本實施方式中,p型半導體材料較佳為包含含有噻吩骨架的構成單元、且包含π共軛系的π共軛高分子化合物。In this embodiment, the p-type semiconductor material is preferably a π-conjugated polymer compound including a structural unit containing a thiophene skeleton and a π-conjugated system.

作為Ar 7所表示的二價芳香族雜環基的具體例,可列舉所述式(101)~式(191)所表示的基。該些基進而可具有取代基。 Specific examples of the divalent aromatic heterocyclic group represented by Ar 7 include groups represented by the above-mentioned formula (101) to formula (191). These groups may further have substituents.

作為本實施方式的p型半導體材料的高分子化合物較佳為包含式(VIII)所表示的構成單元作為施體構成單元、並且包含式(IX)所表示的構成單元作為受體構成單元的π共軛高分子化合物。The polymer compound as the p-type semiconductor material of the present embodiment is preferably π containing a structural unit represented by formula (VIII) as a donor structural unit and a structural unit represented by formula (IX) as an acceptor structural unit. Conjugated polymer compounds.

於作為本實施方式的p型半導體材料的高分子化合物中,作為p型半導體材料的高分子化合物可包含已說明的式(VIII)所表示的構成單元與下述式(IX)所表示的構成單元連結而成的結構來作為構成單元。In the polymer compound as the p-type semiconductor material of this embodiment, the polymer compound as the p-type semiconductor material may include the structural unit represented by the already described formula (VIII) and the structure represented by the following formula (IX) A structure composed of connected units serves as a structural unit.

作為本實施方式的p型半導體材料的高分子化合物可包含兩種以上的式(VIII)所表示的構成單元,亦可包含兩種以上的式(IX)所表示的構成單元。The polymer compound as the p-type semiconductor material of this embodiment may contain two or more structural units represented by formula (VIII), or may contain two or more structural units represented by formula (IX).

例如,就提高相對於溶媒的溶解性的觀點而言,作為本實施方式的p型半導體材料的高分子化合物亦可包含下述式(X)所表示的構成單元。For example, from the viewpoint of improving solubility in a solvent, the polymer compound as the p-type semiconductor material of this embodiment may contain a structural unit represented by the following formula (X).

[化60] [Chemical 60]

式(X)中,Ar 8表示伸芳基。 In formula (X), Ar 8 represents an aryl group.

所謂Ar 8所表示的伸芳基是指自可具有取代基的芳香族烴除去2個氫原子後殘留的原子團。芳香族烴中亦包括具有縮合環的化合物、選自由獨立的苯環及縮合環所組成的群組中的兩個以上直接或經由伸乙烯基等二價基鍵結而成的化合物。 The aryl group represented by Ar 8 refers to an atomic group remaining after removing two hydrogen atoms from an aromatic hydrocarbon which may have a substituent. Aromatic hydrocarbons also include compounds having condensed rings, and compounds in which two or more selected from the group consisting of independent benzene rings and condensed rings are bonded directly or via a divalent group such as a vinyl vinyl group.

作為芳香族烴可具有的取代基的例子,可列舉與作為雜環式化合物可具有的取代基而例示的取代基同樣的取代基。Examples of the substituents that the aromatic hydrocarbon may have include the same substituents as those exemplified as the substituents that the heterocyclic compound may have.

Ar 8所表示的伸芳基的碳原子數不包括取代基的碳原子數,通常為6~60,較佳為6~20。包含取代基的伸芳基的碳原子數通常為6~100。 The number of carbon atoms of the aryl group represented by Ar 8 does not include the number of carbon atoms of the substituent, and is usually 6 to 60, preferably 6 to 20. The aryl group containing a substituent usually has 6 to 100 carbon atoms.

作為Ar 8所表示的伸芳基的例子,可列舉:伸苯基(例如,下述式1~式3)、萘-二基(例如,下述式4~式13)、蒽-二基(例如,下述式14~式19)、聯苯-二基(例如,下述式20~式25)、聯三苯-二基(例如,下述式26~式28)、縮合環化合物基(例如,下述式29~式35)、芴-二基(例如,下述式36~式38)、及苯並芴-二基(例如,下述式39~式46)。 Examples of the aryl group represented by Ar 8 include phenylene group (for example, the following formulas 1 to 3), naphthalene-diyl (for example, the following formulas 4 to 13), anthracene-diyl (For example, the following formulas 14 to 19), biphenyl-diyl (for example, the following formulas 20 to 25), terphenyl-diyl (for example, the following formulas 26 to 28), condensed ring compounds group (for example, the following formulas 29 to 35), fluorene-diyl (for example, the following formulas 36 to 38), and benzofluorene-diyl (for example, the following formulas 39 to 46).

[化61] [Chemical 61]

[化62] [Chemical 62]

[化63] [Chemical 63]

[化64] [Chemical 64]

[化65] [Chemical 65]

[化66] [Chemical 66]

[化67] [Chemical 67]

[化68] [Chemical 68]

式中,R如所述定義般。存在多個的R可相同亦可不同。In the formula, R is as defined above. Multiple R's may be the same or different.

式(X)所表示的構成單元較佳為下述式(X-1)及式(X-2)所表示的構成單元。The structural unit represented by formula (X) is preferably a structural unit represented by the following formula (X-1) and formula (X-2).

[化69] [Chemical 69]

式(X-1)中,R如所述定義般。存在兩個的R可相同亦可不同。In formula (X-1), R is defined as described above. There are two R's that may be the same or different.

構成作為p型半導體材料的高分子化合物的構成單元可為選自所述構成單元中的兩種以上的構成單元組合連結兩個以上而成的構成單元。The structural unit constituting the polymer compound that is the p-type semiconductor material may be a structural unit in which two or more structural units selected from the above-mentioned structural units are connected in combination.

於作為p型半導體材料的高分子化合物包含式(VIII)所表示的構成單元及/或式(IX)所表示的構成單元的情況下,當將高分子化合物所包含的所有構成單元的量設為100莫耳%時,式(VIII)所表示的構成單元與式(IX)所表示的構成單元的合計量通常為20莫耳%~100莫耳%,就提高作為p型半導體材料的電荷傳輸性的觀點而言,較佳為40莫耳%~100莫耳%,更佳為50莫耳%~100莫耳%。When the polymer compound as a p-type semiconductor material contains the structural unit represented by formula (VIII) and/or the structural unit represented by formula (IX), when the amount of all the structural units contained in the polymer compound is assumed to be When it is 100 mol%, the total amount of the structural unit represented by formula (VIII) and the structural unit represented by formula (IX) is usually 20 mol% to 100 mol%, which increases the electric charge of the p-type semiconductor material. From the viewpoint of transmittance, 40 mol% to 100 mol% is preferred, and 50 mol% to 100 mol% is more preferred.

作為本實施方式的p型半導體材料的高分子化合物的具體例可列舉下述式(P-1)~式(P-18)所表示的高分子化合物。Specific examples of the polymer compound of the p-type semiconductor material of this embodiment include polymer compounds represented by the following formulas (P-1) to (P-18).

[化70] [Chemical 70]

[化71] [Chemical 71]

[化72] [Chemical 72]

[化73] [Chemical 73]

[化74] [Chemical 74]

[化75] [Chemical 75]

[化76] [Chemical 76]

所述式中,R如所述定義般。存在多個的R可相同亦可不同。In the above formula, R is as defined above. Multiple R's may be the same or different.

若使用所述例示的高分子化合物作為p型半導體材料,則可抑制相對於光電轉換元件的製造步驟或組裝至應用光電轉換元件的器件中的步驟等中的加熱處理而言的EQE的降低或者進一步提高EQE,可提高光電轉換元件的耐熱性。If the exemplified polymer compound is used as a p-type semiconductor material, it is possible to suppress a decrease in EQE with respect to a heat treatment in a manufacturing step of a photoelectric conversion element or a step of assembling a photoelectric conversion element into a device to which the photoelectric conversion element is applied, or the like. Further increasing EQE can improve the heat resistance of photoelectric conversion elements.

(中間層) 如圖1所示,本實施方式的光電轉換元件中,作為用於提高光電轉換效率等的特性的構成要素,例如較佳為包括電荷傳輸層(電子傳輸層、電洞傳輸層、電子注入層、電洞注入層)等中間層(緩衝層)。 (middle layer) As shown in FIG. 1 , the photoelectric conversion element of this embodiment preferably includes a charge transport layer (electron transport layer, hole transport layer, electron injection layer) as a component for improving characteristics such as photoelectric conversion efficiency. , hole injection layer) and other intermediate layers (buffer layer).

另外,作為中間層中使用的材料的例子,可列舉:鈣等金屬、氧化鉬、氧化鋅等無機氧化物半導體、及PEDOT(聚(3,4-乙烯二氧噻吩))與PSS(聚(4-苯乙烯磺酸鹽))的混合物(PEDOT:PSS)。Examples of materials used in the intermediate layer include metals such as calcium, inorganic oxide semiconductors such as molybdenum oxide and zinc oxide, and PEDOT (poly(3,4-ethylenedioxythiophene)) and PSS (poly(3,4-ethylenedioxythiophene)). 4-styrenesulfonate)) mixture (PEDOT:PSS).

如圖1所示,光電轉換元件較佳為於陽極與活性層之間包括電洞傳輸層。電洞傳輸層具有自活性層向電極傳輸電洞的功能。As shown in FIG. 1 , the photoelectric conversion element preferably includes a hole transport layer between the anode and the active layer. The hole transport layer has the function of transporting holes from the active layer to the electrode.

有時將與陽極相接地設置的電洞傳輸層特別地稱為電洞注入層。與陽極相接地設置的電洞傳輸層(電洞注入層)具有促進電洞向陽極注入的功能。電洞傳輸層(電洞注入層)可與活性層相接。Sometimes the hole transport layer provided in contact with the anode is specifically called a hole injection layer. The hole transport layer (hole injection layer) provided in connection with the anode has the function of promoting the injection of holes into the anode. The hole transport layer (hole injection layer) can be connected to the active layer.

電洞傳輸層包含電洞傳輸性材料。作為電洞傳輸性材料的例子,可列舉聚噻吩及其衍生物、芳香族胺化合物、包含具有芳香族胺殘基的構成單元的高分子化合物、CuSCN、CuI、NiO、氧化鎢(WO 3)及氧化鉬(MoO 3)。 The hole transport layer contains a hole transport material. Examples of hole-transporting materials include polythiophene and its derivatives, aromatic amine compounds, polymer compounds containing structural units having aromatic amine residues, CuSCN, CuI, NiO, and tungsten oxide (WO 3 ) and molybdenum oxide (MoO 3 ).

中間層可藉由先前公知的任意適合的形成方法來形成。中間層可藉由真空蒸鍍法或與活性層的形成方法相同的塗佈法來形成。The intermediate layer may be formed by any suitable formation method previously known. The intermediate layer can be formed by a vacuum evaporation method or a coating method similar to the formation method of the active layer.

本實施方式的光電轉換元件較佳為中間層為電子傳輸層,且具有基板(支持基板)、陽極、電洞傳輸層、活性層、電子傳輸層、陰極以依次彼此相接的方式積層的結構。The photoelectric conversion element of this embodiment preferably has a structure in which the middle layer is an electron transport layer and has a substrate (support substrate), an anode, a hole transport layer, an active layer, an electron transport layer, and a cathode laminated in order to be connected to each other. .

如圖1所示,本實施方式的光電轉換元件較佳為於陰極與活性層之間包括電子傳輸層作為中間層。電子傳輸層具有自活性層向陰極傳輸電子的功能。電子傳輸層可與陰極相接。電子傳輸層亦可與活性層相接。As shown in FIG. 1 , the photoelectric conversion element of this embodiment preferably includes an electron transport layer as an intermediate layer between the cathode and the active layer. The electron transport layer has the function of transporting electrons from the active layer to the cathode. The electron transport layer can be connected to the cathode. The electron transport layer can also be connected to the active layer.

有時將與陰極相接地設置的電子傳輸層特別地稱為電子注入層。與陰極相接地設置的電子傳輸層(電子注入層)具有促進活性層中產生的電子向陰極注入的功能。The electron transport layer provided in contact with the cathode is sometimes specifically called an electron injection layer. The electron transport layer (electron injection layer) provided in contact with the cathode has the function of promoting the injection of electrons generated in the active layer into the cathode.

電子傳輸層包含電子傳輸性材料。作為電子傳輸性材料的例子,可列舉:聚伸烷基亞胺及其衍生物、包含芴結構的高分子化合物、鈣等金屬、金屬氧化物。The electron transport layer contains an electron transport material. Examples of electron-transporting materials include polyalkyleneimine and its derivatives, polymer compounds containing a fluorene structure, metals such as calcium, and metal oxides.

作為聚伸烷基亞胺及其衍生物的例子,可列舉藉由常規方法將伸乙基亞胺、伸丙基亞胺、伸丁基亞胺、二甲基伸乙基亞胺、伸戊基亞胺、伸己基亞胺、伸庚基亞胺、伸辛基亞胺等碳原子數2~8的伸烷基亞胺、特別是碳原子數2~4的伸烷基亞胺的一種或兩種以上聚合而獲得的聚合物、以及使該些與各種化合物反應並進行化學改質而得的聚合物。作為聚伸烷基亞胺及其衍生物,較佳為聚乙烯亞胺(PEI)及乙氧基化聚乙烯亞胺(PEIE)。Examples of polyalkyleneimine and its derivatives include ethyleneimine, propyleneimine, butyleneimine, dimethylethyleneimine, and pentyleneimine by conventional methods. A kind of alkylene imine having 2 to 8 carbon atoms, especially alkylene imine having 2 to 4 carbon atoms, such as alkylene imine, hexylene imine, heptyl imine, and octyl imine. Or polymers obtained by polymerizing two or more types, and polymers obtained by reacting these with various compounds and chemically modifying them. As polyalkyleneimine and its derivatives, polyethyleneimine (PEI) and ethoxylated polyethyleneimine (PEIE) are preferred.

作為包含芴結構的高分子化合物的例子,可列舉聚[(9,9-雙(3'-(N,N-二甲基胺基)丙基)-2,7-芴)-鄰-2,7-(9,9'-二辛基芴)](PFN)及PFN-P2。Examples of polymer compounds containing a fluorene structure include poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-ortho-2 ,7-(9,9'-dioctylfluorene)] (PFN) and PFN-P2.

作為金屬氧化物的例子,可列舉氧化鋅、鎵摻雜氧化鋅、鋁摻雜氧化鋅、氧化鈦及氧化鈮。作為金屬氧化物,較佳為包含鋅的金屬氧化物,其中較佳為氧化鋅。Examples of metal oxides include zinc oxide, gallium-doped zinc oxide, aluminum-doped zinc oxide, titanium oxide, and niobium oxide. As the metal oxide, a metal oxide containing zinc is preferred, and zinc oxide is particularly preferred.

作為其他電子傳輸性材料的例子,可列舉聚(4-乙烯基苯酚)、苝二醯亞胺。Examples of other electron transporting materials include poly(4-vinylphenol) and perylenediamide.

(密封構件) 本實施方式的光電轉換元件更包括密封構件,且較佳為設為由所述密封構件密封而得的密封體。 密封構件可使用任意適合的先前公知的構件。作為密封構件的例子,可列舉作為基板(密封基板)的玻璃基板與UV硬化性樹脂等密封材(接著劑)的組合。 (Sealing component) The photoelectric conversion element of this embodiment further includes a sealing member, and is preferably a sealed body sealed by the sealing member. Any suitable previously known member may be used as the sealing member. Examples of the sealing member include a combination of a glass substrate as a substrate (sealing substrate) and a sealing material (adhesive) such as UV curable resin.

密封構件亦可為一層以上的層結構的密封層。作為構成密封層的層的例子,可列舉阻氣層、阻氣性膜。The sealing member may also be a sealing layer having a layer structure of more than one layer. Examples of the layer constituting the sealing layer include a gas barrier layer and a gas barrier film.

密封層較佳為由具有阻擋水分的性質(水蒸氣阻隔性)或阻擋氧的性質(氧阻隔性)的材料形成。作為適合作為密封層的材料的材料的例子,可列舉:三氟化聚乙烯、聚三氟化氯乙烯(PCTFE)、聚醯亞胺、聚碳酸酯、聚對苯二甲酸乙二酯、脂環式聚烯烴、乙烯-乙烯醇共聚物等有機材料、氧化矽、氮化矽、氧化鋁、類金剛石碳(Diamond-like Carbon)等無機材料等。The sealing layer is preferably formed of a material that has a property of blocking moisture (water vapor barrier property) or a property of blocking oxygen (oxygen barrier property). Examples of suitable materials for the sealing layer include trifluorinated polyethylene, polyethylene trifluoride (PCTFE), polyimide, polycarbonate, polyethylene terephthalate, and grease. Organic materials such as cyclic polyolefin and ethylene-vinyl alcohol copolymer, inorganic materials such as silicon oxide, silicon nitride, alumina, diamond-like carbon, etc.

密封構件由可耐受加熱處理的材料構成,所述加熱處理通常於組裝至應用光電轉換元件的、例如下述應用例的器件中時實施。The sealing member is made of a material that can withstand heat treatment that is usually performed when being assembled into a device to which a photoelectric conversion element is applied, such as in the application examples described below.

(光電轉換元件的用途) 作為本實施方式的光電轉換元件的用途,可列舉光檢測元件、太陽電池。 更具體而言,本實施方式的光電轉換元件於對電極間施加電壓(反向偏置電壓)的狀態下自透明或半透明的電極側照射光,藉此可使光電流流通,可作為光檢測元件(光感測器)運作。另外,亦可藉由聚集多個光檢測元件而用作圖像感測器。如此,本實施方式的光電轉換元件可特別適合用作光檢測元件。 (Use of photoelectric conversion element) Examples of applications of the photoelectric conversion element of this embodiment include photodetection elements and solar cells. More specifically, the photoelectric conversion element of this embodiment can irradiate light from the transparent or translucent electrode side with a voltage (reverse bias voltage) applied between the electrodes, thereby allowing photocurrent to flow, and can be used as light The detection element (light sensor) operates. In addition, it can also be used as an image sensor by gathering multiple light detection elements. In this way, the photoelectric conversion element of this embodiment can be particularly suitably used as a photodetection element.

另外,本實施方式的光電轉換元件藉由照射光,可使電極間產生光電動勢,可作為太陽電池運作。亦可藉由聚集多個光電轉換元件而製成太陽電池模組。In addition, the photoelectric conversion element of this embodiment can generate photoelectromotive force between electrodes by irradiating light, and can operate as a solar cell. A solar cell module can also be made by gathering multiple photoelectric conversion elements.

(光電轉換元件的應用例) 本實施方式的光電轉換元件作為光檢測元件而可適合地應用於工作站、個人電腦、便攜式資訊終端、出入室管理系統、數位相機、及醫療設備等各種電子裝置所包括的檢測部中。 (Application examples of photoelectric conversion elements) The photoelectric conversion element of this embodiment can be suitably used as a light detection element in detection parts included in various electronic devices such as workstations, personal computers, portable information terminals, room entry and exit management systems, digital cameras, and medical equipment.

本實施方式的光電轉換元件可適合地應用於所述例示的電子裝置所包括的例如X射線攝像裝置及互補式金氧半導體(complementary metal oxide semiconductor,CMOS)圖像感測器等固態攝像裝置用的圖像檢測部(例如X射線感測器等圖像感測器)、指紋檢測部、面部檢測部、靜脈檢測部及虹膜檢測部等檢測生物體的部分既定特徵的生物體資訊認證裝置的檢測部(例如近紅外線感測器)、脈衝血氧儀等光學生物感測器的檢測部等中。The photoelectric conversion element of this embodiment can be suitably applied to solid-state imaging devices such as X-ray imaging devices and complementary metal oxide semiconductor (CMOS) image sensors included in the exemplary electronic devices. A biological information authentication device that detects some predetermined characteristics of a living body such as an image detection unit (such as an image sensor such as an X-ray sensor), a fingerprint detection unit, a face detection unit, a vein detection unit, and an iris detection unit. In the detection part (such as a near-infrared sensor), the detection part of an optical biosensor such as a pulse oximeter, etc.

本實施方式的光電轉換元件作為固態攝像裝置用的圖像檢測部,進而亦可適合地應用於飛行時間(Time-of-flight,TOF)型距離測定裝置(TOF型測距裝置)。The photoelectric conversion element of this embodiment can be suitably applied to a time-of-flight (TOF) distance measuring device (TOF distance measuring device) as an image detection unit for a solid-state imaging device.

4.光電轉換元件的製造方法 本實施方式的光電轉換元件的製造方法並無特別限定。本實施方式的光電轉換元件可藉由組合適合於形成構成要素時所選擇的材料的形成方法來製造。 4. Manufacturing method of photoelectric conversion element The method of manufacturing the photoelectric conversion element of this embodiment is not particularly limited. The photoelectric conversion element of this embodiment can be manufactured by combining a forming method suitable for the materials selected when forming the constituent elements.

本實施方式的光電轉換元件的製造方法中可包括含有在100℃以上的加熱溫度下進行加熱的處理的步驟。更具體而言,活性層藉由包括在100℃以上的加熱溫度下進行加熱的處理的步驟形成,及/或於形成活性層的步驟之後,可包括含有在100℃以上的加熱溫度下進行加熱的處理的步驟。The method of manufacturing a photoelectric conversion element according to this embodiment may include a step of heating at a heating temperature of 100° C. or higher. More specifically, the active layer is formed by a step of heating at a heating temperature of 100° C. or higher, and/or after the step of forming the active layer, the step may include heating at a heating temperature of 100° C. or higher. processing steps.

以下,作為本發明的實施方式,對具有基板(支持基板)、陽極、電洞傳輸層、活性層、電子傳輸層、陰極依次相互相接的結構的光電轉換元件的製造方法進行說明。Hereinafter, as an embodiment of the present invention, a method for manufacturing a photoelectric conversion element having a structure in which a substrate (support substrate), an anode, a hole transport layer, an active layer, an electron transport layer, and a cathode are sequentially connected to each other will be described.

(準備基板的步驟) 於本步驟中,例如準備設置有陽極的支持基板。另外,自市場獲取設置有由已說明的電極的材料形成的導電性薄膜的基板,視需要,藉由對導電性薄膜進行圖案化而形成陽極,可準備設置有陽極的支持基板。 (Steps to prepare substrate) In this step, for example, a supporting substrate provided with an anode is prepared. In addition, a substrate provided with a conductive thin film made of the material of the electrode described above is obtained from the market, and if necessary, the conductive film is patterned to form an anode, thereby preparing a support substrate provided with the anode.

於本實施方式的光電轉換元件的製造方法中,於支持基板上形成陽極時的陽極的形成方法並無特別限定。陽極可藉由真空蒸鍍法、濺鍍法、離子鍍法、鍍敷法、塗佈法等先前公知的任意適合的方法將已說明的材料形成於應形成陽極的結構(例如支持基板、活性層、電洞傳輸層)上。In the method of manufacturing the photoelectric conversion element of this embodiment, the method of forming the anode when forming the anode on the supporting substrate is not particularly limited. The anode can be formed by any suitable method known in the past such as vacuum evaporation, sputtering, ion plating, plating, coating, etc. layer, hole transport layer).

(電洞傳輸層的形成步驟) 光電轉換元件的製造方法可包括形成設置於活性層與陽極之間的電洞傳輸層(電洞注入層)的步驟。 (Steps for forming hole transport layer) The method of manufacturing a photoelectric conversion element may include the step of forming a hole transport layer (hole injection layer) provided between the active layer and the anode.

電洞傳輸層的形成方法並無特別限定。就進一步簡化電洞傳輸層的形成步驟的觀點而言,較佳為藉由先前公知的任意適合的塗佈法形成電洞傳輸層。電洞傳輸層例如可藉由使用包含已說明的電洞傳輸層的材料及溶媒的塗佈液的塗佈法或真空蒸鍍法來形成。The formation method of the hole transport layer is not particularly limited. From the viewpoint of further simplifying the steps of forming the hole transport layer, it is preferable to form the hole transport layer by any suitable coating method known in the past. The hole transport layer can be formed, for example, by a coating method or a vacuum evaporation method using a coating liquid containing the material and solvent of the hole transport layer described above.

(活性層的形成步驟) 本實施方式的光電轉換元件的製造方法中,於電洞傳輸層上形成活性層。作為主要的構成要素的活性層可藉由任意適合的先前公知的形成步驟來形成。於本實施方式中,活性層較佳為藉由使用油墨組成物(油墨、塗佈液)的塗佈法來製造。 (Steps for forming active layer) In the method of manufacturing a photoelectric conversion element of this embodiment, an active layer is formed on the hole transport layer. The active layer as the main constituent element can be formed by any suitable previously known formation steps. In this embodiment, the active layer is preferably produced by a coating method using an ink composition (ink, coating liquid).

以下,對本發明的光電轉換元件的作為主要的構成要素的活性層的形成步驟所包括的步驟(i)及步驟(ii)進行說明。Hereinafter, steps (i) and (ii) included in the formation process of the active layer, which is a main component of the photoelectric conversion element of the present invention, will be described.

步驟(i) 作為將油墨組成物塗佈於塗佈對象的方法,可使用任意適合的塗佈法。作為塗佈法,較佳為狹縫塗佈法、刮刀塗佈法、旋塗法、微凹版塗佈法、凹版塗佈法、棒塗法、噴墨印刷法、噴嘴塗佈法或毛細管塗佈法,更佳為狹縫塗佈法、旋塗法、毛細管塗佈法或棒塗法,進而佳為狹縫塗佈法或旋塗法。 Step (i) As a method of applying the ink composition to the application object, any appropriate coating method can be used. As the coating method, slit coating, blade coating, spin coating, microgravure coating, gravure coating, rod coating, inkjet printing, nozzle coating or capillary coating are preferred. The coating method is more preferably a slit coating method, a spin coating method, a capillary coating method or a rod coating method, and further preferably a slit coating method or a spin coating method.

本實施方式的光電轉換元件的製造方法中使用的油墨組成物包含至少一種p型半導體材料及至少一種n型半導體材料。The ink composition used in the method of manufacturing a photoelectric conversion element of this embodiment contains at least one p-type semiconductor material and at least one n-type semiconductor material.

因此,本實施方式的油墨組成物較佳為光電轉換元件的活性層形成用的油墨組成物。以下,對本實施方式的活性層形成用的油墨組成物進行說明。再者,本實施方式的活性層形成用的油墨組成物較佳為本體異質接面型活性層的形成用的油墨組成物。因此,活性層形成用的油墨組成物包括包含已說明的本實施方式的非富勒烯化合物作為已說明的p型半導體材料或n型半導體材料的組成物。本實施方式的活性層形成用的油墨組成物包含所述組成物以及兩種以上的溶媒,所述兩種以上的溶媒包括第一溶媒及具有較所述第一溶媒的沸點而言高的沸點的第二溶媒。Therefore, the ink composition of this embodiment is preferably an ink composition for forming an active layer of a photoelectric conversion element. Hereinafter, the ink composition for forming an active layer according to this embodiment will be described. Furthermore, the ink composition for forming the active layer of this embodiment is preferably an ink composition for forming a bulk heterojunction active layer. Therefore, the ink composition for active layer formation includes a composition containing the non-fullerene compound of the present embodiment as the p-type semiconductor material or n-type semiconductor material described above. The ink composition for forming an active layer of this embodiment includes the composition and two or more solvents, and the two or more solvents include a first solvent and a solvent having a boiling point higher than that of the first solvent. the second solvent.

根據本實施方式的活性層形成用的油墨組成物,藉由包含p型半導體材料、n型半導體材料、以及兩種以上的溶媒,所述兩種以上的溶媒包括第一溶媒及具有較所述第一溶媒的沸點而言高的沸點的第二溶媒,可形成更良好的相分離結構,結果可進一步提高外部量子效率(EQE)等特性(關於詳細情況,將後述)。The ink composition for forming an active layer according to this embodiment includes a p-type semiconductor material, an n-type semiconductor material, and two or more solvents, the two or more solvents including a first solvent and a solvent having the above-mentioned A second solvent with a higher boiling point than the first solvent can form a better phase separation structure, and as a result, characteristics such as external quantum efficiency (EQE) can be further improved (details will be described later).

本實施方式的活性層形成用的油墨組成物中使用由第一溶媒及第二溶媒組合而成的混合溶媒。具體而言,本實施方式的油墨組成物包含作為主成分的主溶媒(第一溶媒)及添加溶媒(第二溶媒)。The ink composition for forming an active layer according to this embodiment uses a mixed solvent composed of a first solvent and a second solvent. Specifically, the ink composition of this embodiment contains a main solvent (first solvent) and an additional solvent (second solvent) as main components.

此處,對可適合用於本實施方式的活性層形成用的油墨組成物中的第一溶媒及第二溶媒及該些的組合、進而油墨組成物的製備進行說明。Here, the first solvent and the second solvent that can be suitably used in the ink composition for forming the active layer according to the present embodiment and their combinations, as well as the preparation of the ink composition, will be described.

(1)第一溶媒 作為第一溶媒,較佳為使用可使本實施方式的p型半導體材料及n型半導體材料兩者溶解且可使任一種半導體材料為式(I)所表示的非富勒烯化合物溶解的良溶媒。本實施方式的第一溶媒較佳為芳香族烴。 (1) First solvent As the first solvent, it is preferable to use a solvent that can dissolve both the p-type semiconductor material and the n-type semiconductor material of the present embodiment and can dissolve any one of the semiconductor materials that is a non-fullerene compound represented by formula (I). solvent. The first solvent in this embodiment is preferably an aromatic hydrocarbon.

作為第一溶媒,例如可列舉:甲苯、二甲苯(例如鄰二甲苯、間二甲苯、對二甲苯)、鄰二氯苯、三甲基苯(例如均三甲苯、1,2,4-三甲基苯(假枯烯))、丁基苯(例如正丁基苯、第二丁基苯、第三丁基苯)、甲基萘(例如1-甲基萘)、四氫萘及二氫茚。Examples of the first solvent include toluene, xylene (such as o-xylene, m-xylene, p-xylene), o-dichlorobenzene, and trimethylbenzene (such as mesitylene, 1,2,4-trimethylbenzene). Methylbenzene (pseudocumene)), butylbenzene (such as n-butylbenzene, 2nd butylbenzene, 3rd butylbenzene), methylnaphthalene (such as 1-methylnaphthalene), tetrahydronaphthalene and dimethylnaphthalene Hydroindene.

第一溶媒可僅包含一種溶媒,亦可包含兩種以上的溶媒。由於可更容易地製備油墨組成物,因此較佳為僅使用一種溶媒作為第一溶媒。The first solvent may contain only one solvent, or may contain two or more solvents. Since the ink composition can be prepared more easily, it is preferable to use only one solvent as the first solvent.

第一溶媒較佳為選自由甲苯、鄰二甲苯、間二甲苯、對二甲苯、均三甲苯、鄰二氯苯、1,2,4-三甲基苯、正丁基苯、第二丁基苯、第三丁基苯、甲基萘、四氫萘及二氫茚所組成的群組中的一種以上,更佳為甲苯、鄰二甲苯、間二甲苯、對二甲苯、鄰二氯苯、均三甲苯、1,2,4-三甲基苯、正丁基苯、第二丁基苯、第三丁基苯、甲基萘、四氫萘或二氫茚。The first solvent is preferably selected from toluene, o-xylene, m-xylene, p-xylene, mesitylene, o-dichlorobenzene, 1,2,4-trimethylbenzene, n-butylbenzene, 2-butylbenzene, One or more of the group consisting of methylnaphthalene, tert-butylbenzene, methylnaphthalene, tetralin and indene, more preferably toluene, o-xylene, m-xylene, p-xylene, o-dichloro Benzene, mesitylene, 1,2,4-trimethylbenzene, n-butylbenzene, 2nd-butylbenzene, 3rd-butylbenzene, methylnaphthalene, tetralin or indene.

(2)第二溶媒 於本實施方式中,第二溶媒是具有較已說明的第一溶媒的沸點而言高的沸點的溶媒。另外,第二溶媒是如下溶媒:包含B 1的化合物的漢森溶解度參數的極性項P(B 1)與第二溶媒的漢森溶解度參數的極性項P(S2)滿足下述式(III)所表示的條件的溶媒,所述B 1是將已說明的式(I)所表示的非富勒烯化合物中的B 1與A 1的鍵切斷而形成的末端利用氫原子封端。 |P(B 1)-P(S2)|>3.2(MPa 0.5)   (III) (2) Second solvent In this embodiment, the second solvent is a solvent having a higher boiling point than the boiling point of the first solvent already described. In addition, the second solvent is a solvent in which the polar term P (B 1 ) of the Hansen solubility parameter of the compound containing B 1 and the polar term P (S2) of the Hansen solubility parameter of the second solvent satisfy the following formula (III) In the solvent under the conditions shown, the terminal B 1 formed by cutting the bond between B 1 and A 1 in the non-fullerene compound represented by the formula (I) has been terminated with a hydrogen atom. |P(B 1 )-P(S2)|>3.2(MPa 0.5 ) (III)

換言之,第二溶媒是具有較第一溶媒的沸點而言高的沸點的溶媒,是以極性項P(B 1)與極性項P(S2)的差的絕對值大於3.2(MPa 0.5)的方式選擇的溶媒。 In other words, the second solvent is a solvent with a higher boiling point than the boiling point of the first solvent such that the absolute value of the difference between the polar term P (B 1 ) and the polar term P (S2) is greater than 3.2 (MPa 0.5 ). Choice of solvent.

此處,對用作與第二溶媒相關的指標的漢森溶解度參數(hansen solubility parameters,HSP)進行說明。Here, Hansen solubility parameters (HSP) used as indicators related to the second solvent will be described.

(i)漢森溶解度參數 所謂漢森溶解度參數(HSP)是溶解度參數的一種,且用於有機化合物中的溶媒探索、將多種有機化合物混合時的溶解性的探討、添加劑的配方設計等。再者,該有機化合物中亦包括多分散的高分子化合物。 (i) Hansen solubility parameter The so-called Hansen solubility parameter (HSP) is a type of solubility parameter and is used to explore solvents in organic compounds, study the solubility when mixing multiple organic compounds, and design additive formulations. Furthermore, the organic compounds also include polydispersed polymer compounds.

漢森溶解度參數包括三種成分:由於凡得瓦(Van der Waals)相互作用而可成為分散力的指標的分散項D、由於靜電相互作用而可成為偶極間力的指標的極性項P、由於氫鍵而可成為氫鍵力的指標的氫鍵項H此三種成分,該些成分可以三維表示。The Hansen solubility parameter includes three components: the dispersion term D, which can be an indicator of dispersion force due to Van der Waals interaction, the polar term P, which can be an indicator of inter-dipole force due to electrostatic interaction. These three components are hydrogen bond terms H which can be used as indicators of hydrogen bonding force. These components can be represented in three dimensions.

關於漢森溶解度參數的定義及計算方法等,例如藉由查爾斯M漢森、漢森溶解度參數(Charles M.Hansen、Hansen Solubility Parameters):用戶手冊(A Users Handbook)及B, 約翰、溶解度參數(B, John、Solubility parameters):理論與應用,書籍和紙頁集團年鑒第三卷(theory and application, The Book and paper group annual Vol.3)而周知,於本實施方式中亦可適宜應用所述計算方法。Regarding the definition and calculation method of Hansen solubility parameters, for example, by Charles M. Hansen, Hansen Solubility Parameters: Users Handbook (A Users Handbook) and B. John, Solubility Parameters ( B, John, Solubility parameters): theory and application, The Book and paper group annual Vol.3 (theory and application, The Book and paper group annual Vol.3) and it is known that the calculation can also be suitably applied in this embodiment method.

另外,漢森溶解度參數(分散項D、極性項P及氫鍵項H)例如可使用實踐中的漢森溶解度參數(Hansen Solubility Parameters in Practice,HSPiP)等市售的電腦軟體,基於化合物的化學結構來算出。關於計算方法的詳細情況,將後述。In addition, Hansen solubility parameters (dispersion term D, polarity term P and hydrogen bond term H) can be determined using commercially available computer software such as Hansen Solubility Parameters in Practice (HSPiP), based on the chemistry of the compound. Structure to figure out. Details of the calculation method will be described later.

如上所述,本實施方式的油墨組成物是包含至少一種p型半導體材料、至少一種n型半導體材料、以及兩種以上的溶媒的油墨組成物。As described above, the ink composition of this embodiment is an ink composition including at least one p-type semiconductor material, at least one n-type semiconductor material, and two or more solvents.

於光電轉換元件的製造方法中,特別是於形成本體異質接面型結構的活性層的情況下,就於活性層中形成良好的相分離結構的觀點而言,於製備活性層形成用的油墨組成物時,需要選定用於使p型半導體材料與n型半導體材料適合地混合的溶媒。In the method of manufacturing a photoelectric conversion element, especially in the case of forming an active layer with a bulk heterojunction type structure, from the viewpoint of forming a good phase separation structure in the active layer, it is important to prepare the ink for forming the active layer. When making a composition, it is necessary to select a solvent for suitably mixing the p-type semiconductor material and the n-type semiconductor material.

此處,應選定的溶媒通常是相對於p型半導體材料及n型半導體材料而言溶解度高的良溶媒。然而,於本實施方式中,除了作為良溶媒的第一溶媒以外,一併使用與所述第一溶媒相比已說明的式(I)所表示的半導體材料的溶解度更小、具有更高的沸點的第二溶媒。Here, the solvent that should be selected is usually a good solvent with high solubility relative to the p-type semiconductor material and the n-type semiconductor material. However, in this embodiment, in addition to the first solvent that is a good solvent, a semiconductor material represented by the formula (I) that has been described above is used in addition to the first solvent. The solubility is smaller and the semiconductor material has a higher Boiling point of the second solvent.

於形成活性層時塗佈本實施方式的油墨組成物後,為了完成活性層,需要於塗佈後除去溶媒。After the ink composition of this embodiment is applied when forming the active layer, in order to complete the active layer, it is necessary to remove the solvent after application.

根據本實施方式,於所述溶媒被除去的過程中,溶解度更大、沸點更低的良溶媒即第一溶媒先蒸發,於第一溶媒蒸發的時間點,主要殘存相對於第一溶媒而言式(I)所表示的非富勒烯化合物的溶解度更小、沸點更高的第二溶媒。如此認為,於沸點更低的良溶媒即第一溶媒首先被除去後,殘存式(I)所表示的非富勒烯化合物的溶解度更小、沸點更高的第二溶媒,然後第二溶媒亦被除去,這會大大影響良好的相分離結構的形成。即,認為藉由適當地選定相對於第一溶媒而言式(I)所表示的非富勒烯化合物的溶解度更小、沸點更高的第二溶媒,能夠形成良好的相分離結構。According to this embodiment, during the process of removing the solvent, a good solvent with greater solubility and lower boiling point, that is, the first solvent, evaporates first. At the time when the first solvent evaporates, the main remaining solvent is the first solvent. The second solvent has smaller solubility and higher boiling point for the non-fullerene compound represented by formula (I). It is believed that after the first solvent, which is a good solvent with a lower boiling point, is first removed, a second solvent with a smaller solubility and a higher boiling point of the non-fullerene compound represented by formula (I) remains, and then the second solvent also remains. be removed, which would greatly affect the formation of a good phase separation structure. That is, it is thought that a good phase separation structure can be formed by appropriately selecting a second solvent in which the solubility of the non-fullerene compound represented by formula (I) is smaller and the boiling point is higher than the first solvent.

根據本實施方式,藉由著眼於漢森溶解度參數的三種成分中可成為偶極間力的指標的漢森溶解度參數的極性項(P)來選定第一溶媒及第二溶媒,可形成良好的相分離結構,可提高光電轉換元件的特性、特別是EQE。According to this embodiment, by focusing on the polar term (P) of the Hansen solubility parameter, which is an index of the inter-dipole force, among the three components of the Hansen solubility parameter, the first solvent and the second solvent are selected, thereby forming a good The phase separation structure can improve the characteristics of photoelectric conversion elements, especially EQE.

(ii)漢森溶解度參數的計算方法 此處,對使用電腦軟體 HSPiP計算本實施方式的漢森溶解度參數的極性項(P)、進而式(III)的|P(B 1)-P(S2)|的計算方法進行說明。 (ii) Calculation method of Hansen solubility parameter Here, the computer software HSPiP is used to calculate the polar term (P) of the Hansen solubility parameter in this embodiment, and further, |P(B 1 )-P(S2) of the formula (III) )|The calculation method is explained.

首先,於確定作為計算對象的化合物的化學結構後,進行以下的順序1)~順序3)。此處,於已說明的式(I)的非富勒烯化合物中,以具有「A 1-B 1」的結構的化合物為例進行說明。 First, after determining the chemical structure of the compound to be calculated, the following procedures 1) to 3) are performed. Here, among the non-fullerene compounds of the formula (I) described above, a compound having a structure of “A 1 -B 1 ” will be described as an example.

1)首先,設想「包含B 1的化合物」:於所確定的化合物的化學結構中切斷A 1與B 1的鍵並切出A 1部位及B 1部位,藉此於B 1部位的末端產生的鍵結鍵上分別加成氫原子而封端的「包含B 1的化合物」。 1) First, imagine a "compound containing B 1 ": in the determined chemical structure of the compound, cut off the bond between A 1 and B 1 and cut out the A 1 part and the B 1 part, thereby adding the end of the B 1 part "Compounds containing B 1 " are terminated by adding hydrogen atoms to the resulting bonds.

2)繼而,使用電腦軟體 HSPiP計算出所設想的包含B 1的化合物的漢森溶解度參數的極性項即P(B 2)。 2) Then, use the computer software HSPiP to calculate the polar term P(B 2 ) of the Hansen solubility parameter of the proposed compound containing B 1 .

3)接著,計算出自所計算出的P(B 1)中減去第二溶媒的漢森溶解度參數的極性項P(S2)而得的值的絕對值即|P(B 1)-P(S2)|。 3) Next, calculate the absolute value of the value obtained by subtracting the polar term P(S2) of the Hansen solubility parameter of the second solvent from the calculated P(B 1 ), which is |P(B 1 )-P( S2)|.

此處,第二溶媒的P(S2)的值只要使用「實踐中的漢森溶解度參數第4版(Hansen solubility parameters in practice 4th edition)」中記載的值即可。Here, the value of P(S2) of the second solvent may be the value described in "Hansen solubility parameters in practice 4th edition".

例如,於第二溶媒為苯乙酮的情況下,P(S2)的值為9.0(MPa 0.5)。 For example, when the second solvent is acetophenone, the value of P(S2) is 9.0 (MPa 0.5 ).

再者,於使用兩種以上的溶媒作為第二溶媒的情況下,只要使用關於沸點最高的溶媒的值即可。Furthermore, when two or more solvents are used as the second solvent, the value for the solvent with the highest boiling point may be used.

此處,將化合物N-1用於具體例,對極性項P(B 1)的計算進行說明。 Here, the calculation of the polar term P (B 1 ) will be described using compound N-1 as a specific example.

首先,如所述順序1)般,設想包含下述式所表示的B 1的化合物(B 1),下述式所表示的B 1是於對化合物N-1切斷A 1與B 1的兩個鍵時於B 1上產生的鍵結鍵上分別加成氫原子而進行封端。 First, as in the procedure 1), a compound (B 1 ) containing B 1 represented by the following formula is assumed. B 1 represented by the following formula is obtained by cutting A 1 and B 1 with respect to compound N-1. In the case of two bonds, hydrogen atoms are added to the bonding bonds generated on B 1 to terminate them.

[化77] [Chemical 77]

接著,如所述順序2)般,對化合物B 1計算出極性項P(B 1)。實際上,於如上所述進行計算時,P(B 1)為1.7(MPa 0.5)。 Next, as in the above-mentioned procedure 2), the polar term P(B 1 ) is calculated for compound B 1 . In fact, when calculated as above, P(B 1 ) is 1.7 (MPa 0.5 ).

因此,於第二溶媒例如為苯乙酮的情況下,可按照所述順序3)計算出的|P(B 1)-P(S2)|的值可計算出為7.3。 Therefore, in the case where the second solvent is, for example, acetophenone, the value of |P(B 1 )-P(S2)| that can be calculated according to the above procedure 3) can be calculated to be 7.3.

特別是關於適用於光電轉換元件的本體異質接合型活性層形成用的油墨組成物的第二溶媒,較佳為已說明的式(I)所表示的非富勒烯化合物不易溶解的溶媒、即相對於式(I)所表示的非富勒烯化合物而言的不良溶媒。更具體而言,第二溶媒較佳為式(I)所表示的非富勒烯化合物的溶解度低於1 g/L的不良溶媒。除此以外,可使用包含B 1的化合物的漢森溶解度參數的極性項與第二溶媒的漢森溶解度參數的極性項的差滿足所述式(III)所表示的關係的第二溶媒。 In particular, the second solvent suitable for the ink composition for forming the bulk heterojunction active layer of the photoelectric conversion element is preferably a solvent in which the non-fullerene compound represented by the formula (I) described above is not easily soluble, that is, A poor solvent for the non-fullerene compound represented by formula (I). More specifically, the second solvent is preferably a poor solvent in which the solubility of the non-fullerene compound represented by formula (I) is less than 1 g/L. Alternatively, a second solvent may be used in which the difference between the polar term of the Hansen solubility parameter of the compound containing B 1 and the polar term of the Hansen solubility parameter of the second solvent satisfies the relationship represented by the above formula (III).

第二溶媒以滿足所述要件為條件,並無特別限定。作為第二溶媒,可考慮所選擇的第一溶媒的特性,自先前公知的溶媒中適宜選擇。第二溶媒不僅可使用一種,亦可使用兩種以上。The second solvent is not particularly limited, provided that it satisfies the above requirements. As the second solvent, the characteristics of the selected first solvent can be taken into consideration, and an appropriate selection can be made from previously known solvents. Not only one type of second solvent may be used, but two or more types of second solvent may be used.

若使用滿足所述要件的溶媒作為第二溶媒,則可形成更良好的相分離結構,進而可提高所製造的光電轉換元件的EQE等特性。If a solvent that satisfies the above requirements is used as the second solvent, a better phase separation structure can be formed, thereby improving the EQE and other characteristics of the manufactured photoelectric conversion element.

於本實施方式中,就形成良好的相分離結構並提高EQE等特性的觀點而言,|P(B 1)-P(S2)|的值較佳為大於3.2,更佳為大於3.3。 In this embodiment, from the viewpoint of forming a good phase separation structure and improving characteristics such as EQE, the value of |P(B 1 )-P(S2)| is preferably greater than 3.2, and more preferably greater than 3.3.

於本實施方式中,就形成良好的相分離結構並提高EQE等特性的觀點而言,第二溶媒較佳為具有較已說明的第一溶媒的沸點而言高30℃以上的沸點的溶媒。In this embodiment, from the viewpoint of forming a good phase separation structure and improving characteristics such as EQE, the second solvent is preferably a solvent having a boiling point 30° C. or more higher than the boiling point of the first solvent already explained.

第二溶媒較佳為醚溶媒、芳香族烴溶媒、酮溶媒或酯溶媒。The second solvent is preferably an ether solvent, an aromatic hydrocarbon solvent, a ketone solvent or an ester solvent.

作為第二溶媒,例如可列舉:1,2-二甲氧基苯、二苯醚、二苄基醚等醚溶媒、1,2,3,5-四甲基苯、環己基苯、1-甲基萘等芳香族烴溶媒、丙酮、甲基乙基酮、環己酮、苯乙酮及苯丙酮等酮溶媒、乙酸乙酯、乙酸丁酯、乙酸苯酯、乙酸纖維素乙酯、苯甲酸甲酯、苯甲酸丁酯及苯甲酸苄酯等酯溶媒。Examples of the second solvent include 1,2-dimethoxybenzene, ether solvents such as diphenyl ether and dibenzyl ether, 1,2,3,5-tetramethylbenzene, cyclohexylbenzene, 1- Aromatic hydrocarbon solvents such as methylnaphthalene, ketone solvents such as acetone, methyl ethyl ketone, cyclohexanone, acetophenone and phenyl acetone, ethyl acetate, butyl acetate, phenyl acetate, ethyl cellulose acetate, benzene Ester solvents such as methyl formate, butyl benzoate and benzyl benzoate.

將可適用於本實施方式的油墨組成物的第二溶媒及漢森溶解度參數的極性項P(S2)(單位:MPa 0.5)的值示於下述表4中。 Table 4 below shows the second solvent applicable to the ink composition of this embodiment and the value of the polar term P (S2) (unit: MPa 0.5 ) of the Hansen solubility parameter.

[表4] (表4) 第二溶媒 P(S2) 丙酮 10.4 甲基乙基酮 9.0 環己酮 8.4 苯乙酮 9.0 乙酸乙酯 5.3 乙酸丁酯 3.7 乙酸苯酯 2.8 乙酸纖維素乙酯 5.1 苯甲酸丁酯 5.6 苯甲酸甲酯 8.2 1,2-二甲氧基苯 4.4 二苯醚 3.4 二苄基醚 3.4 苯丙酮 6.3 苯甲酸苄酯 5.1 1,2,3,5-四甲基苯 0.5 環己基苯 0.0 1-甲基萘 0.8 [Table 4] (Table 4) Second solvent P(S2) acetone 10.4 Methyl ethyl ketone 9.0 cyclohexanone 8.4 Acetophenone 9.0 Ethyl acetate 5.3 Butyl acetate 3.7 Phenyl acetate 2.8 Cellulose acetate ethyl ester 5.1 Butyl benzoate 5.6 Methyl benzoate 8.2 1,2-Dimethoxybenzene 4.4 diphenyl ether 3.4 dibenzyl ether 3.4 Prophenyl acetone 6.3 Benzyl benzoate 5.1 1,2,3,5-Tetramethylbenzene 0.5 Cyclohexylbenzene 0.0 1-methylnaphthalene 0.8

作為第二溶媒,就形成更良好的相分離結構並進一步提高EQE等特性的觀點而言,較佳為使用例如苯乙酮、苯甲酸丁酯、苯甲酸甲酯、1,2-二甲氧基苯。As the second solvent, from the viewpoint of forming a better phase separation structure and further improving characteristics such as EQE, it is preferable to use, for example, acetophenone, butyl benzoate, methyl benzoate, 1,2-dimethoxy Benzene.

(3)第一溶媒及第二溶媒的組合 將第一溶媒及第二溶媒的適合的組合的例子與沸點(℃)一併示於下述表5中。 (3) Combination of first solvent and second solvent Examples of suitable combinations of the first solvent and the second solvent are shown in the following Table 5 together with the boiling point (°C).

[表5] (表5) 第一溶媒(S1) 第二溶媒(S2) 四氫萘(207℃) 苯甲酸丁酯(250℃) 四氫萘(207℃) 1-甲基萘(244℃) 假枯烯(169℃) 1,2-二甲氧基苯(207℃) 假枯烯(169℃) 苯甲酸丁酯(250℃) 鄰二甲苯(144℃) 苯甲酸甲酯(199℃) 鄰二甲苯(144℃) 苯乙酮(202℃) [Table 5] (Table 5) First solvent (S1) Second solvent (S2) Tetralin (207℃) Butyl benzoate (250℃) Tetralin (207℃) 1-Methylnaphthalene (244℃) Pseudocumene (169℃) 1,2-Dimethoxybenzene (207℃) Pseudocumene (169℃) Butyl benzoate (250℃) Ortho-xylene (144℃) Methyl benzoate (199℃) Ortho-xylene (144℃) Acetophenone (202℃)

如上所述,於本實施方式的油墨組成物中,作為第一溶媒及第二溶媒的適合的組合的例子,可列舉:四氫萘(第一溶媒)與苯甲酸丁酯(第二溶媒)的組合、鄰二甲苯(第一溶媒)與苯甲酸甲酯(第二溶媒)的組合、鄰二甲苯(第一溶媒)與苯乙酮(第二溶媒)的組合及假枯烯(第一溶媒)與1,2-二甲氧基苯(第二溶媒)的組合。As described above, in the ink composition of this embodiment, examples of suitable combinations of the first solvent and the second solvent include: tetralin (first solvent) and butyl benzoate (second solvent) The combination of o-xylene (the first solvent) and methyl benzoate (the second solvent), the combination of o-xylene (the first solvent) and acetophenone (the second solvent) and pseudocumene (the first solvent) A combination of solvent) and 1,2-dimethoxybenzene (second solvent).

(4)第一溶媒及第二溶媒的體積比 就形成更良好的相分離結構並提高EQE等特性的觀點而言,作為主溶媒的第一溶媒相對於作為添加溶媒的第二溶媒的體積比(第一溶媒:第二溶媒)較佳為設為85:15~99:1的範圍,更佳為設為90:10~98:2的範圍,進而佳為設為93:7~97:3的範圍。 (4) Volume ratio of the first solvent to the second solvent From the viewpoint of forming a better phase separation structure and improving characteristics such as EQE, the volume ratio of the first solvent as the main solvent to the second solvent as the additional solvent (first solvent: second solvent) is preferably The ratio is in the range of 85:15 to 99:1, more preferably in the range of 90:10 to 98:2, and still more preferably in the range of 93:7 to 97:3.

(5)任意其他溶媒 溶媒亦可包含已說明的第一溶媒及第二溶媒以外的任意其他溶媒。於將油墨組成物中所含的全部溶媒的合計質量設為100質量%時,任意其他溶媒的含有率較佳為5質量%以下,更佳為3質量%以下,進而佳為1質量%以下。作為任意其他溶媒,較佳為沸點高於第二溶媒的溶媒。 (5) Any other solvent The solvent may also include any other solvent other than the first solvent and the second solvent described above. When the total mass of all solvents contained in the ink composition is 100 mass %, the content rate of any other solvent is preferably 5 mass % or less, more preferably 3 mass % or less, and still more preferably 1 mass % or less. . As any other solvent, a solvent with a higher boiling point than the second solvent is preferred.

(6)任意成分 於油墨組成物中,除了第一溶媒、第二溶媒、p型半導體材料及n型半導體材料以外,亦可於不損害本發明的目的及效果的限度內包含界面活性劑、紫外線吸收劑、抗氧化劑、用於使利用所吸收的光來產生電荷的功能增敏的增敏劑、用於增加相對於紫外線的穩定性的光穩定劑等任意成分。 (6) Any ingredients In addition to the first solvent, the second solvent, the p-type semiconductor material and the n-type semiconductor material, the ink composition may also contain a surfactant, an ultraviolet absorber, an antioxidant within the limit that does not impair the purpose and effect of the present invention. Optional components include an oxidizing agent, a sensitizer for sensitizing the function of generating charges using absorbed light, and a light stabilizer for increasing stability against ultraviolet rays.

(7)p型半導體材料及n型半導體材料的濃度 關於油墨組成物中的p型半導體材料及n型半導體材料的濃度,亦考慮到相對於溶媒的溶解度等,可於不損害本發明的目的的範圍內設為任意適合的濃度。 (7) Concentration of p-type semiconductor material and n-type semiconductor material The concentration of the p-type semiconductor material and the n-type semiconductor material in the ink composition can be set to any appropriate concentration within a range that does not impair the object of the present invention, taking into consideration the solubility in the solvent.

油墨組成物中的「p型半導體材料」相對於「n型半導體材料」的質量比(聚合物/非富勒烯化合物)通常為1/0.1至1/10的範圍,較佳為1/0.5至1/2的範圍,更佳為1/1.5。The mass ratio (polymer/non-fullerene compound) of the "p-type semiconductor material" to the "n-type semiconductor material" in the ink composition is usually in the range of 1/0.1 to 1/10, preferably 1/0.5 to 1/2, preferably 1/1.5.

油墨組成物中的「p型半導體材料」與「n型半導體材料」的合計濃度通常為0.01質量%以上,更佳為0.02質量%以上,進而佳為0.25質量%以上。另外,油墨組成物中的「p型半導體材料」與「n型半導體材料」的合計濃度通常為20質量%以下,較佳為10質量%以下,更佳為7.50質量%以下。The total concentration of the "p-type semiconductor material" and the "n-type semiconductor material" in the ink composition is usually 0.01 mass% or more, more preferably 0.02 mass% or more, still more preferably 0.25 mass% or more. In addition, the total concentration of the "p-type semiconductor material" and the "n-type semiconductor material" in the ink composition is usually 20 mass% or less, preferably 10 mass% or less, and more preferably 7.50 mass% or less.

油墨組成物中的「p型半導體材料」的濃度通常為0.01質量%以上,更佳為0.02質量%以上,進而佳為0.10質量%以上。另外,油墨組成物中的「p型半導體材料」的濃度通常為10質量%以下,更佳為5.00質量%以下,進而佳為3.00質量%以下。The concentration of the "p-type semiconductor material" in the ink composition is usually 0.01 mass% or more, more preferably 0.02 mass% or more, and still more preferably 0.10 mass% or more. In addition, the concentration of the "p-type semiconductor material" in the ink composition is usually 10 mass% or less, more preferably 5.00 mass% or less, and still more preferably 3.00 mass% or less.

油墨組成物中的「n型半導體材料」的濃度通常為0.01質量%以上,更佳為0.02質量%以上,進而佳為0.15質量%以上。另外,油墨中的「n型半導體材料」的濃度通常為10質量%以下,更佳為5質量%以下,進而佳為4.50質量%以下。The concentration of the "n-type semiconductor material" in the ink composition is usually 0.01 mass% or more, more preferably 0.02 mass% or more, and still more preferably 0.15 mass% or more. In addition, the concentration of the "n-type semiconductor material" in the ink is usually 10 mass% or less, more preferably 5 mass% or less, and still more preferably 4.50 mass% or less.

(8)油墨組成物的製備 於本實施方式中,油墨組成物可藉由先前公知的任意適合的方法製備。例如可藉由將第一溶媒或第一溶媒及第二溶媒混合來製備混合溶媒,於所獲得的混合溶媒中添加(共軛)高分子化合物(p型半導體材料)及式(I)所表示的化合物(n型半導體材料)的方法;於第一溶媒中添加p型半導體材料,於第二溶媒中添加n型半導體材料,之後將添加了各材料的第一溶媒及第二溶媒混合的方法等來製備。 (8) Preparation of ink composition In this embodiment, the ink composition can be prepared by any suitable method known previously. For example, a mixed solvent can be prepared by mixing the first solvent or the first solvent and the second solvent, and adding (conjugated) polymer compound (p-type semiconductor material) and formula (I) to the obtained mixed solvent. compound (n-type semiconductor material); a method of adding a p-type semiconductor material to a first solvent, adding an n-type semiconductor material to a second solvent, and then mixing the first solvent and the second solvent containing each material Wait to prepare.

可將第一溶媒、第二溶媒以及p型半導體材料及n型半導體材料加溫至溶媒的沸點以下的溫度來混合。The first solvent, the second solvent, the p-type semiconductor material and the n-type semiconductor material can be heated to a temperature lower than the boiling point of the solvent and mixed.

可將第一溶媒、第二溶媒以及p型半導體材料及n型半導體材料混合後,使用過濾器過濾所獲得的混合物,將所獲得的濾液用作。作為過濾器,例如可使用由聚四氟乙烯(polytetrafluoroethylene,PTFE)等氟樹脂形成的過濾器。The first solvent, the second solvent, the p-type semiconductor material and the n-type semiconductor material can be mixed, and the obtained mixture can be filtered using a filter, and the obtained filtrate can be used. As the filter, for example, a filter made of a fluororesin such as polytetrafluoroethylene (PTFE) can be used.

活性層形成用的油墨組成物塗佈於根據光電轉換元件及其製造方法而選擇的塗佈對象上。於光電轉換元件的製造步驟中,活性層形成用的油墨組成物可被塗佈於光電轉換元件所具有的可存在活性層的功能層上。因此,活性層形成用的油墨組成物的塗佈對象根據所製造的光電轉換元件的層結構及層形成的順序而不同。例如,於光電轉換元件具有積層了基板、陽極、電洞傳輸層、活性層、電子傳輸層、陰極的層結構,且先形成更靠左側記載的層的情況下,活性層形成用的油墨組成物的塗佈對象為電洞傳輸層。另外,例如,於光電轉換元件具有積層了基板、陰極、電子傳輸層、活性層、電洞傳輸層、陽極的層結構,且先形成更靠左側記載的層的情況下,活性層形成用的油墨組成物的塗佈對象為電子傳輸層。The ink composition for forming the active layer is applied to a coating target selected based on the photoelectric conversion element and its manufacturing method. In the manufacturing step of the photoelectric conversion element, the ink composition for forming the active layer can be coated on the functional layer of the photoelectric conversion element where the active layer can exist. Therefore, the objects to be coated with the ink composition for forming the active layer differ depending on the layer structure of the photoelectric conversion element to be manufactured and the order of layer formation. For example, when the photoelectric conversion element has a layer structure in which a substrate, anode, hole transport layer, active layer, electron transport layer, and cathode are laminated, and the layers described further to the left are formed first, the composition of the ink for forming the active layer The coating object of the object is the hole transport layer. In addition, for example, when the photoelectric conversion element has a layer structure in which a substrate, a cathode, an electron transport layer, an active layer, a hole transport layer, and an anode are laminated, and the layer described further to the left is formed first, the active layer forming layer is The ink composition is applied to the electron transport layer.

步驟(ii) 作為自油墨組成物的塗膜中除去溶媒的方法、即自塗膜中除去溶媒而進行固化的方法,可使用任意適合的方法。作為除去溶媒的方法的例子,可列舉於氮氣等惰性氣體環境下使用加熱板直接加熱的方法、熱風乾燥法、紅外線加熱乾燥法、閃光燈退火乾燥法、減壓乾燥法等乾燥法。 Step (ii) Any suitable method can be used as a method of removing the solvent from the coating film of the ink composition, that is, a method of removing the solvent from the coating film and curing the coating film. Examples of methods for removing solvents include direct heating using a hot plate in an inert gas environment such as nitrogen, drying methods such as hot air drying, infrared heating drying, flash lamp annealing drying, and reduced pressure drying.

於本實施方式的光電轉換元件的製造方法中,步驟(ii)是用於使溶媒揮發而除去的步驟,亦稱為預烘烤步驟(第一加熱處理步驟)。In the method of manufacturing a photoelectric conversion element of this embodiment, step (ii) is a step for volatilizing and removing the solvent, which is also called a pre-baking step (first heat treatment step).

關於預烘烤步驟及後烘烤步驟的實施條件即加熱溫度、加熱處理時間等條件,考慮到所使用的油墨的組成、溶媒的沸點等,可設為任意適合的條件。The execution conditions of the pre-baking step and the post-baking step, that is, conditions such as heating temperature and heat treatment time, can be set to any appropriate conditions taking into consideration the composition of the ink used, the boiling point of the solvent, etc.

於本實施方式的光電轉換元件的製造方法中,具體而言,例如可於氮氣環境下使用加熱板來實施預烘烤步驟及後烘烤步驟。In the manufacturing method of the photoelectric conversion element of this embodiment, specifically, for example, a heating plate can be used to perform the pre-baking step and the post-baking step in a nitrogen atmosphere.

預烘烤步驟及後烘烤步驟中的合計加熱處理時間例如可設為1小時。The total heat treatment time in the prebaking step and the postbaking step can be set to 1 hour, for example.

預烘烤步驟中的加熱溫度與後烘烤步驟中的加熱溫度可相同亦可不同。The heating temperature in the pre-baking step and the heating temperature in the post-baking step may be the same or different.

加熱處理時間例如可設為10分鐘以上。加熱處理時間的上限值並無特別限定,但考慮到節拍時間等,例如可設為4小時。The heat treatment time can be set to 10 minutes or more, for example. The upper limit of the heat treatment time is not particularly limited, but in consideration of takt time and the like, it may be set to 4 hours, for example.

活性層的厚度可藉由適宜調整油墨組成物中的固體成分濃度、所述步驟(i)及/或步驟(ii)的條件,設為任意適合的所期望的厚度。The thickness of the active layer can be set to any suitable desired thickness by appropriately adjusting the solid content concentration in the ink composition and the conditions of steps (i) and/or (ii).

形成活性層的步驟除了包括所述步驟(i)及步驟(ii)以外,亦可以不損害本發明的目的及效果為條件而包括其他步驟。In addition to the steps (i) and (ii), the step of forming the active layer may also include other steps without impairing the purpose and effect of the present invention.

本實施方式的光電轉換元件的製造方法可為製造包括多個活性層的光電轉換元件的方法,亦可為重覆多次步驟(i)及步驟(ii)的方法。The manufacturing method of the photoelectric conversion element of this embodiment may be a method of manufacturing a photoelectric conversion element including a plurality of active layers, or may be a method of repeating steps (i) and (ii) multiple times.

(電子傳輸層的形成步驟) 本實施方式的光電轉換元件的製造方法包括形成設置於活性層上的電子傳輸層(電子注入層)的步驟。 (Steps for forming electron transport layer) The method of manufacturing a photoelectric conversion element according to this embodiment includes the step of forming an electron transport layer (electron injection layer) provided on the active layer.

電子傳輸層的形成方法並無特別限定。就進一步簡化電子傳輸層的形成步驟的觀點而言,較佳為藉由先前公知的任意適合的真空蒸鍍法來形成電子傳輸層。The method of forming the electron transport layer is not particularly limited. From the viewpoint of further simplifying the steps of forming the electron transport layer, it is preferable to form the electron transport layer by any suitable vacuum evaporation method known in the past.

(陰極的形成步驟) 陰極的形成方法並無特別限定。陰極例如可藉由塗佈法、真空蒸鍍法、濺鍍法、離子鍍法、鍍敷法等先前公知的任意適合的方法,將所述例示的電極的材料形成於電子傳輸層上。藉由以上的步驟,製造本實施方式的光電轉換元件。 (Cathode formation step) The formation method of the cathode is not particularly limited. The cathode can be formed of the material of the exemplified electrode on the electron transport layer by any suitable method known in the art, such as coating, vacuum evaporation, sputtering, ion plating, plating. Through the above steps, the photoelectric conversion element of this embodiment is manufactured.

(密封體的形成步驟) 當形成密封體時,於本實施方式中,使用先前公知的任意適合的密封材(接著劑)及基板(密封基板)。具體而言,以包圍所製造的光電轉換元件的周邊的方式,於支持基板上塗佈例如UV硬化性樹脂等密封材後,藉由密封材無間隙地貼附後,使用UV光的照射等適合於所選擇的密封材的方法,將光電轉換元件密封於支持基板與密封基板的間隙中,藉此可獲得光電轉換元件的密封體。 (Steps for forming the sealed body) When forming the sealing body, in this embodiment, any suitable sealing material (adhesive) and substrate (sealing substrate) known in the past are used. Specifically, a sealing material such as a UV curable resin is applied to the supporting substrate so as to surround the periphery of the produced photoelectric conversion element, and the sealing material is attached without gaps, and then irradiation with UV light is used. A sealed body of the photoelectric conversion element can be obtained by sealing the photoelectric conversion element in the gap between the supporting substrate and the sealing substrate using a method suitable for the selected sealing material.

5.圖像感測器、生物體認證裝置的製造方法 如上所述,作為本實施方式的光電轉換元件的特別是光檢測元件可組裝至圖像感測器、生物體認證裝置(指紋認證裝置、靜脈認證裝置)中來發揮功能。 [實施例] 5. Manufacturing method of image sensor and biometric authentication device As described above, the photoelectric conversion element of this embodiment, particularly the photodetection element, can be incorporated into an image sensor or a biometric authentication device (fingerprint authentication device, vein authentication device) to function. [Example]

以下,為了進一步詳細說明本發明,示出實施例。本發明並不限定於以下說明的實施例。Hereinafter, in order to explain this invention further in detail, an Example is shown. The present invention is not limited to the examples described below.

本實施例中,使用下述表6所示的高分子化合物作為p型半導體材料(供電子性化合物),使用下述表7及表8所示的化合物作為n型半導體材料(電子接受性化合物)。In this example, the polymer compounds shown in Table 6 below were used as p-type semiconductor materials (electron-donating compounds), and the compounds shown in Tables 7 and 8 below were used as n-type semiconductor materials (electron-accepting compounds). ).

[表6] (表6) 高分子化合物 化學結構 P-1 [Table 6] (Table 6) polymer compounds chemical structure P-1

[表7] (表7) 化合物 化學結構 N-1 N-2 N-3 N-4 [Table 7] (Table 7) compound chemical structure N-1 N-2 N-3 N-4

[表8] (表8) 化合物 化學結構 N-5 N-6 N-7 [Table 8] (Table 8) compound chemical structure N-5 N-6 N-7

關於作為p型半導體材料的高分子化合物P-1,參考國際公開第2011/052709號中記載的方法進行合成並使用。The polymer compound P-1, which is a p-type semiconductor material, was synthesized and used with reference to the method described in International Publication No. 2011/052709.

關於作為n型半導體材料的化合物N-1~化合物N-7,如後述的合成例般合成而使用。Compounds N-1 to N-7, which are n-type semiconductor materials, are synthesized and used as in the synthesis examples described below.

<合成例1>(化合物2的合成) 使用下述式所表示的化合物1合成下述式所表示的化合物2。 <Synthesis Example 1> (Synthesis of Compound 2) Compound 2 represented by the following formula was synthesized using compound 1 represented by the following formula.

[化78] [Chemical 78]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入藉由文獻(染料與顏料(Dyes and Pigments), 2015, 112, 145.)中記載的方法合成的化合物1 4.00 g(7.77 mmol)、四氫呋喃78 mL,冷卻至-30℃。In a 300 mL four-necked flask in which the internal environment was replaced with nitrogen, 4.00 g (7.77) of Compound 1 synthesized by the method described in the literature (Dyes and Pigments, 2015, 112, 145.) was placed. mmol), 78 mL of tetrahydrofuran, and cool to -30°C.

接著,於四口燒瓶中,加入N-溴代琥珀醯亞胺1.31 g(7.38 mmol),於-30℃下攪拌6小時。Next, 1.31 g (7.38 mmol) of N-bromosuccinimide was added to the four-necked flask, and the mixture was stirred at -30°C for 6 hours.

繼而,將所獲得的溶液升溫至常溫,於常溫下進而攪拌3小時並使其反應後,進而加入3%亞硫酸鈉水溶液,藉此使反應停止。Then, the temperature of the obtained solution was raised to normal temperature, and the mixture was further stirred at normal temperature for 3 hours to react, and then 3% sodium sulfite aqueous solution was added to stop the reaction.

利用己烷對所獲得的反應液進行萃取後,利用水及飽和氯化鈉水溶液進行清洗,獲得有機層。The obtained reaction liquid was extracted with hexane, and then washed with water and a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以淺黃色油的形式獲得化合物2 4.16 g(7.01 mmol,產率94.9%)。The obtained crude product was purified using a silica gel column to obtain 4.16 g (7.01 mmol, yield 94.9%) of compound 2 as a light yellow oil.

關於所獲得的化合物2,對核磁共振(nuclear magnetic resonance,NMR)光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.16 (d, J HH=8.4 Hz, 4H), 7.10 (d, J HH=8.4 Hz, 4H), 6.98 (d, J HH=4.8 Hz, 1H), 6.75(d, J HH=4.8 Hz, 1H), 6.42 (s, 1H), 2.58 (t, 4H), 1.63-1.57(m, 4H), 1.36-1.27 (br, 12H), 0.87 (t, 6H). Regarding the obtained compound 2, a nuclear magnetic resonance (NMR) spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.16 (d, J HH =8.4 Hz, 4H), 7.10 (d, J HH =8.4 Hz, 4H), 6.98 (d, J HH =4.8 Hz, 1H), 6.75 (d, J HH =4.8 Hz, 1H), 6.42 (s, 1H), 2.58 (t, 4H), 1.63-1.57(m, 4H), 1.36-1.27 (br, 12H), 0.87 (t, 6H) .

<合成例2>(化合物3的合成) 使用下述式所表示的化合物2合成下述式所表示的化合物3。 <Synthesis Example 2> (Synthesis of Compound 3) Compound 3 represented by the following formula was synthesized using compound 2 represented by the following formula.

[化79] [Chemical 79]

於利用氮氣置換了內部的環境的100 mL三口燒瓶中,加入化合物2 4.13 g(6.96 mmol)、脫水四氫呋喃70 mL,將所獲得的溶液冷卻至-70℃後,加入正丁基鋰溶液(1.64 mol/L,己烷溶液)4.13 mL,進行1小時攪拌。In a 100 mL three-necked flask whose internal environment was replaced with nitrogen, 4.13 g (6.96 mmol) of compound 2 and 70 mL of dehydrated tetrahydrofuran were added. After cooling the obtained solution to -70°C, n-butyllithium solution (1.64 mol/L, hexane solution) 4.13 mL, stir for 1 hour.

接著,於將反應液於-70℃下保持的狀態下,加入三甲氧基硼烷1.01 g(9.74 mmol),進行2小時攪拌。Next, while maintaining the reaction liquid at -70°C, 1.01 g (9.74 mmol) of trimethoxyborane was added, and stirring was performed for 2 hours.

繼而,於所獲得的反應液中放入10質量%乙酸水溶液(30 mL),使用乙酸乙酯進行分液操作,對有機層進行萃取。針對所獲得的有機層,加入甲苯(20 mL)、2-羥基亞甲基-2-甲基-1,3-丙二醇1.25 g(10.4 mmol),使用迪安-斯塔克(Dean-Stark)管進行30分鐘脫水操作。進而,利用旋轉蒸發器除去溶媒,以綠色油的形式取得化合物3的粗生成物4.47 g。Then, a 10 mass% acetic acid aqueous solution (30 mL) was added to the obtained reaction liquid, and liquid separation was performed using ethyl acetate, and the organic layer was extracted. To the obtained organic layer, add toluene (20 mL) and 1.25 g (10.4 mmol) of 2-hydroxymethylene-2-methyl-1,3-propanediol, and use Dean-Stark. The tube was dehydrated for 30 minutes. Furthermore, the solvent was removed using a rotary evaporator, and 4.47 g of a crude product of compound 3 was obtained as a green oil.

<合成例3>(化合物5的合成) 使用下述式所表示的化合物3及化合物4合成下述式所表示的化合物5。 <Synthesis Example 3> (Synthesis of Compound 5) Compound 5 represented by the following formula was synthesized using compound 3 and compound 4 represented by the following formula.

[化80] [Chemical 80]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入藉由日本專利特開2013-43818號公報中記載的方法而合成的化合物4 1.00 g(1.43 mmol)、化合物3 2.20 g(3.43 mmol)、四氫呋喃14 mL,利用氬氣進行30分鐘鼓泡,藉此進行脫氣。In a 300 mL four-necked flask in which the internal environment was replaced with nitrogen, 1.00 g (1.43 mmol) of compound 4 synthesized by the method described in Japanese Patent Application Laid-Open No. 2013-43818 and 2.20 g (2.20 g) of compound 3 were placed. 3.43 mmol), 14 mL of tetrahydrofuran, and degassed by bubbling argon gas for 30 minutes.

繼而,於四口燒瓶中,放入三(二亞苄基丙酮)二鈀(0)0.105 g(0.11 mmol,8 mol%)、三-第三丁基鏻四氟硼酸鹽0.070 g(0.23 mmol,16 mol%)、四氫呋喃5 mL,攪拌5分鐘。Then, in a four-necked flask, put 0.105 g (dibenzylideneacetone) dipalladium (0) (0.11 mmol, 8 mol%) and 0.070 g (0.23 mmol) tris-tert-butylphosphonium tetrafluoroborate. , 16 mol%), 5 mL of tetrahydrofuran, and stir for 5 minutes.

接著,於四口燒瓶中,加入3.0 M磷酸鉀水溶液14 mL,將反應液於設定溫度50℃的油浴中加熱3小時並且進行攪拌。Next, 14 mL of 3.0 M potassium phosphate aqueous solution was added to a four-necked flask, and the reaction solution was heated in an oil bath with a set temperature of 50° C. for 3 hours while stirring.

將反應液冷卻後,於四口燒瓶中,加入水100 mL、己烷100 mL,對有機層利用水進行三次分液清洗,利用飽和氯化鈉水溶液進行一次分液清洗。After the reaction solution was cooled, 100 mL of water and 100 mL of hexane were added to a four-necked flask, and the organic layer was washed three times with water and once with saturated sodium chloride aqueous solution.

使用無水硫酸鈉將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was evaporated under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紅色油的形式獲得化合物5 1.74 g(1.11 mmol,產率78%)。The obtained crude product was purified using a silica gel column to obtain 1.74 g (1.11 mmol, yield 78%) of compound 5 as a red oil.

關於所獲得的化合物5,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.38 (s, 1H), 7.23-7.18 (m, 8H), 7.14-7.10 (m, 8H),7.03-7.00 (m, 2H), 6.92 (s, 1H), 6.79-6.77 (m, 2H), 6.58 (s, 1H), 6.53 (s, 1H), 2.62-2.57 (m, 8H), 2.19-2.11 (m, 2H), 1.71-1.56 (m, 10H), 1.37-1.25 (m, 28H), 1.25-1.08 (br, 36H), 0.89-0.83 (m, 18H). Regarding the obtained compound 5, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.38 (s, 1H), 7.23-7.18 (m, 8H), 7.14-7.10 (m, 8H), 7.03-7.00 (m, 2H), 6.92 (s, 1H) , 6.79-6.77 (m, 2H), 6.58 (s, 1H), 6.53 (s, 1H), 2.62-2.57 (m, 8H), 2.19-2.11 (m, 2H), 1.71-1.56 (m, 10H) , 1.37-1.25 (m, 28H), 1.25-1.08 (br, 36H), 0.89-0.83 (m, 18H).

<合成例4>(化合物6的合成) 使用下述式所表示的化合物5合成下述式所表示的化合物6。 <Synthesis Example 4> (Synthesis of Compound 6) Compound 6 represented by the following formula was synthesized using compound 5 represented by the following formula.

[化81] 於利用氮氣置換了內部的環境的100 mL三口燒瓶中,放入化合物5 1.74 g(1.11 mmol)、氯仿12 mL,於室溫下攪拌10分鐘使化合物5溶解。 [Chemical 81] In a 100 mL three-necked flask whose internal environment was replaced with nitrogen, 1.74 g (1.11 mmol) of compound 5 and 12 mL of chloroform were placed, and the mixture was stirred at room temperature for 10 minutes to dissolve compound 5.

接著,於三口燒瓶中,放入(氯亞甲基)二甲基氯化銨0.43 g(3.33 mmol),於設定溫度65℃的油浴中加熱2小時並且進行攪拌。Next, 0.43 g (3.33 mmol) of (chloromethylene)dimethylammonium chloride was placed in a three-necked flask, and the mixture was heated in an oil bath with a set temperature of 65° C. for 2 hours while stirring.

繼而,將反應液冷卻後,加入水20 mL,對有機層利用飽和氯化鈉水溶液進行兩次分液清洗。使用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。Then, after cooling the reaction solution, 20 mL of water was added, and the organic layer was separated and washed twice with a saturated sodium chloride aqueous solution. The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色油的形式獲得化合物6 1.63 g(1.01 mmol,產率90.6%)。The obtained crude product was purified using a silica gel column to obtain 1.63 g (1.01 mmol, yield 90.6%) of compound 6 as a dark red oil.

關於所獲得的化合物6,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.76 (s, 1H), 9.75 (s, 1H), 7.46 (s, 1H), 7.37 (s, 1H), 7.36 (s, 1H), 7.21-7.12 (m, 16H), 7.00 (s, 1H), 6.61 (s, 1H), 6.58 (s, 1H), 2.63-2.58 (m, 8H), 2.21-2.13(m, 2H), 1.73-1.57 (m, 10H), 1.37-1.26 (m, 28H), 1.24-1.09 (br, 36H), 0.89-0.83 (m, 18H). Regarding the obtained compound 6, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.76 (s, 1H), 9.75 (s, 1H), 7.46 (s, 1H), 7.37 (s, 1H), 7.36 (s, 1H), 7.21-7.12 (m , 16H), 7.00 (s, 1H), 6.61 (s, 1H), 6.58 (s, 1H), 2.63-2.58 (m, 8H), 2.21-2.13(m, 2H), 1.73-1.57 (m, 10H ), 1.37-1.26 (m, 28H), 1.24-1.09 (br, 36H), 0.89-0.83 (m, 18H).

<合成例5>(化合物N-1的合成) 使用下述式所表示的化合物6及化合物7合成下述式所表示的化合物N-1。 <Synthesis Example 5> (Synthesis of Compound N-1) Compound N-1 represented by the following formula was synthesized using compound 6 and compound 7 represented by the following formula.

[化82] [Chemical 82]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物6 0.57 g(0.35 mmol)、化合物7 0.28 g(1.05 mmol)、氯仿10 mL、吡啶0.003 g(0.04 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 100 mL four-necked flask whose internal environment has been replaced with nitrogen, 0.57 g (0.35 mmol) of compound 6, 0.28 g (1.05 mmol) of compound 7, 10 mL of chloroform, and 0.003 g (0.04 mmol) of pyridine are placed, and the mixture is placed at 65 Heat in an oil bath at ℃ for 2 hours with stirring.

將所獲得的溶液冷卻至常溫,並加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗,獲得有機層。The obtained solution was cooled to normal temperature, and water was added to stop the reaction. The obtained solution was extracted with chloroform, washed twice with water, and once with a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深藍綠色的固體的形式獲得化合物N-1 0.64 g(0.30 mmol,產率86.3%)。The obtained crude product was purified using a silica gel column to obtain 0.64 g (0.30 mmol, yield 86.3%) of compound N-1 as a dark blue-green solid.

關於所獲得的化合物N-1,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.74 (s, 1H), 8.73 (s, 1H), 8.69 (s, 1H), 8.68 (s, 1H), 7.91 (s, 1H), 7.90 (s, 1H), 7.49 (s, 2H), 7.46 (s, 1H), 7.21-7.14 (m, 16H), 7.03 (s, 1H), 6.67 (s, 1H), 6.64 (s, 1H), 2.64-2.59 (m, 8H), 2.24-2.17(m, 2H), 1.99-1.86 (m, 8H), 1.76-1.59 (m, 10H), 1.38-1.26 (m, 28H), 1.24-1.12 (br, 36H), 0.89-0.83 (m, 18H). The NMR spectrum of the obtained compound N-1 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.74 (s, 1H), 8.73 (s, 1H), 8.69 (s, 1H), 8.68 (s, 1H), 7.91 (s, 1H), 7.90 (s, 1H ), 7.49 (s, 2H), 7.46 (s, 1H), 7.21-7.14 (m, 16H), 7.03 (s, 1H), 6.67 (s, 1H), 6.64 (s, 1H), 2.64-2.59 ( m, 8H), 2.24-2.17(m, 2H), 1.99-1.86 (m, 8H), 1.76-1.59 (m, 10H), 1.38-1.26 (m, 28H), 1.24-1.12 (br, 36H), 0.89-0.83 (m, 18H).

<合成例6>(化合物9的合成) 由下述式所表示的化合物8合成下述式所表示的化合物9。 <Synthesis Example 6> (Synthesis of Compound 9) Compound 9 represented by the following formula is synthesized from compound 8 represented by the following formula.

[化83] [Chemical 83]

於利用氮氣置換了內部的環境的100 mL三口燒瓶中,加入藉由國際公開第2011/052709號的段落[0271]中記載的方法合成的化合物18 2.85 g(5.36 mmol)、脫水四氫呋喃27 mL,將所獲得的溶液冷卻至-70℃後,加入正丁基鋰溶液(1.64 mol/L,己烷溶液)3.3 mL,進行2小時攪拌。Into a 100 mL three-necked flask whose internal environment was replaced with nitrogen, 2.85 g (5.36 mmol) of compound 18 synthesized by the method described in paragraph [0271] of International Publication No. 2011/052709 and 27 mL of dehydrated tetrahydrofuran were added. After cooling the obtained solution to -70°C, 3.3 mL of n-butyllithium solution (1.64 mol/L, hexane solution) was added and stirred for 2 hours.

接著,於將反應液於-70℃下保持的狀態下,加入三甲氧基硼烷0.83 g(8.04 mmol),進行2小時攪拌。Next, while maintaining the reaction liquid at -70°C, 0.83 g (8.04 mmol) of trimethoxyborane was added, and stirring was performed for 2 hours.

繼而,於所獲得的反應液中放入10 w%乙酸水溶液(30 mL),使用乙酸乙酯進行分液操作,對有機層進行萃取。針對所獲得的有機層,加入甲苯(20 mL)、2-羥基亞甲基-2-甲基-1,3-丙二醇1.29 g(10.72 mmol),使用迪安-斯塔克管進行脫水操作30分鐘。進而,利用旋轉蒸發器除去溶媒,以綠色油的形式取得化合物19的粗產物3.53 g。Then, a 10 w% acetic acid aqueous solution (30 mL) was added to the obtained reaction liquid, and liquid separation was performed using ethyl acetate, and the organic layer was extracted. To the obtained organic layer, add toluene (20 mL) and 1.29 g (10.72 mmol) of 2-hydroxymethylene-2-methyl-1,3-propanediol, and perform dehydration using a Dean-Stark tube 30 minute. Furthermore, the solvent was removed using a rotary evaporator, and 3.53 g of a crude product of compound 19 was obtained as a green oil.

<合成例7>(化合物11的合成) 使用下述式所表示的化合物9及化合物10合成下述式所表示的化合物11。 <Synthesis Example 7> (Synthesis of Compound 11) Compound 11 represented by the following formula was synthesized using compound 9 and compound 10 represented by the following formula.

[化84] [Chemical 84]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入合成例6中獲得的未精製的粗產物即化合物9 3.53 g(5.36 mmol)、自機光科技股份有限公司(Luminescence Technology Corp.)購入的化合物10 1.2 g(2.23 mmol)、四氫呋喃22 mL,利用氬氣進行30分鐘鼓泡,藉此進行脫氣。Into a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 3.53 g (5.36 mmol) of Compound 9, the unrefined crude product obtained in Synthesis Example 6, purchased from Luminescence Technology Corp. .) 1.2 g (2.23 mmol) of purchased compound 10 and 22 mL of tetrahydrofuran were degassed by bubbling argon gas for 30 minutes.

於所獲得的反應液中,放入三(二亞苄基丙酮)二鈀(0)0.164 g(0.179 mmol,8 mol%)、三-第三丁基鏻四氟硼酸鹽0.109 g(0.357 mmol,16 mol%),攪拌5分鐘。In the obtained reaction solution, 0.164 g (0.179 mmol, 8 mol%) tris(dibenzylideneacetone)dipalladium(0) and 0.109 g (0.357 mmol) tris-tert-butylphosphonium tetrafluoroborate were added. , 16 mol%), stir for 5 minutes.

接著,於反應液中進而加入3.0 M磷酸鉀水溶液22 mL,將所獲得的反應液於設定溫度75℃的油浴中加熱1小時並且進行攪拌。Next, 22 mL of 3.0 M potassium phosphate aqueous solution was further added to the reaction liquid, and the obtained reaction liquid was heated in an oil bath with a set temperature of 75° C. for 1 hour while stirring.

繼而,將反應液冷卻後,加入水100 mL、己烷100 mL,利用水進行三次分液清洗,利用飽和氯化鈉水溶液進行一次分液清洗。Then, after cooling the reaction solution, 100 mL of water and 100 mL of hexane were added, and liquid separation and washing were performed three times with water, and once with a saturated sodium chloride aqueous solution.

利用無水硫酸鈉將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色油的形式獲得化合物11 2.11 g(1.49 mmol,產率67%)。The obtained solution was dried with anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 2.11 g (1.49 mmol, yield 67%) of compound 11 as a dark red oil.

關於所獲得的化合物21,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.94 (s, 1H), 7.03 (dd, J HH=9.2 Hz, 5.2 Hz, 2H), 6.85 (s, 1H), 6.81 (s, 1H), 6.68 (dd, J HH=5.2 Hz, 1.6 Hz, 2H), 4.37 (t, J HH=6.8 Hz, 2H), 1.95-1.78 (m, 10H), 1.44-1.22 (m, 100H), 0.86 (t, 15H). The NMR spectrum of the obtained compound 21 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.94 (s, 1H), 7.03 (dd, J HH =9.2 Hz, 5.2 Hz, 2H), 6.85 (s, 1H), 6.81 (s, 1H), 6.68 (dd , J HH =5.2 Hz, 1.6 Hz, 2H), 4.37 (t, J HH =6.8 Hz, 2H), 1.95-1.78 (m, 10H), 1.44-1.22 (m, 100H), 0.86 (t, 15H) .

<合成例8>(化合物12的合成) 由下述式所表示的化合物11合成下述式所表示的化合物12。 <Synthesis Example 8> (Synthesis of Compound 12) Compound 12 represented by the following formula is synthesized from compound 11 represented by the following formula.

[化85] [Chemical 85]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,加入化合物21 1.5 g(1.06 mmol)、二氯甲烷11 mL並使其溶解。To a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 1.5 g (1.06 mmol) of compound 21 and 11 mL of methylene chloride were added and dissolved.

接著,於所獲得的反應液中,放入(氯亞甲基)二甲基氯化銨0.41 g(3.19 mmol),於設定溫度40℃的油浴中加熱攪拌3小時。Next, 0.41 g (3.19 mmol) of (chloromethylene)dimethylammonium chloride was added to the obtained reaction liquid, and the mixture was heated and stirred for 3 hours in an oil bath with a set temperature of 40°C.

繼而,將所獲得的反應液冷卻後,加入水20 mL,利用飽和氯化鈉水溶液進行兩次分液清洗。Then, after cooling the obtained reaction liquid, 20 mL of water was added, and liquid separation and washing were performed twice with a saturated sodium chloride aqueous solution.

利用硫酸鎂將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒而獲得粗生成物,利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紫色固體的形式獲得化合物22 1.44 g(0.98 mmol,產率92%)。The obtained solution was dried with magnesium sulfate and then filtered. The solvent was evaporated under reduced pressure to obtain a crude product. The obtained crude product was purified using a silica gel column to obtain the compound as a purple solid. 22 1.44 g (0.98 mmol, yield 92%).

關於所獲得的化合物22,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.78 (s, 1H), 9.77 (s, 1H), 7.95 (s, 1H), 7.29 (s, 1H), 7.28 (s, 1H), 6.90 (s, 1H), 6.86 (s, 1H), 4.39 (t, J HH=7.2 Hz, 2H), 1.97-1.79 (m, 10H), 1.46-1.22 (m, 100H), 0.86 (t, 15H). The NMR spectrum of the obtained compound 22 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.78 (s, 1H), 9.77 (s, 1H), 7.95 (s, 1H), 7.29 (s, 1H), 7.28 (s, 1H), 6.90 (s, 1H ), 6.86 (s, 1H), 4.39 (t, J HH =7.2 Hz, 2H), 1.97-1.79 (m, 10H), 1.46-1.22 (m, 100H), 0.86 (t, 15H).

<合成例9>(化合物N-2的合成) 使用下述式所表示的化合物12及化合物13合成下述式所表示的化合物N-2。 <Synthesis Example 9> (Synthesis of Compound N-2) Compound N-2 represented by the following formula was synthesized using compound 12 and compound 13 represented by the following formula.

[化86] [Chemical 86]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物12 1.4 g(0.98 mmol)、化合物13 0.78 g(2.95 mmol)、氯仿20 mL、吡啶0.04 g(0.49 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 100 mL four-necked flask whose internal environment was replaced with nitrogen, 1.4 g (0.98 mmol) of compound 12, 0.78 g (2.95 mmol) of compound 13, 20 mL of chloroform, and 0.04 g (0.49 mmol) of pyridine were placed at 65 Heat in an oil bath at ℃ for 2 hours with stirring.

接著,將所獲得的溶液冷卻至常溫,並加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗。Next, the obtained solution was cooled to normal temperature, and water was added to stop the reaction. After the obtained solution was extracted with chloroform, it was washed twice with water and once with a saturated sodium chloride aqueous solution.

繼而,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以黑色固體的形式獲得化合物N-2 1.5 g(0.77 mmol,產率95%)。Then, the obtained organic layer was dried with magnesium sulfate and filtered, and the solvent was distilled off under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 1.5 g (0.77 mmol, yield 95%) of compound N-2 as a black solid.

關於所獲得的化合物N-2,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.57-8.51 (m, 4H), 7.81 (s, 1H), 7.77 (s, 1H), 7.73 (s, 1H), 7.29 (br, 2H), 6.96 (s, 1H), 6.88 (s, 1H), 4.50 (t, J HH=7.2 Hz, 2H), 2.08-1.93 (m, 10H), 1.59-1.20 (m, 100H), 0.83 (t, 15H). The NMR spectrum of the obtained compound N-2 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.57-8.51 (m, 4H), 7.81 (s, 1H), 7.77 (s, 1H), 7.73 (s, 1H), 7.29 (br, 2H), 6.96 (s , 1H), 6.88 (s, 1H), 4.50 (t, J HH =7.2 Hz, 2H), 2.08-1.93 (m, 10H), 1.59-1.20 (m, 100H), 0.83 (t, 15H).

<合成例10>(化合物15的合成) 使用下述式所表示的化合物14合成下述式所表示的化合物15。 <Synthesis Example 10> (Synthesis of Compound 15) Compound 15 represented by the following formula was synthesized using compound 14 represented by the following formula.

[化83] [Chemical 83]

於利用氮氣置換了內部的環境的300 mL三口燒瓶中,加入藉由日本專利特開2012-36357號公報的段落[0269]至段落[0274]中記載的方法合成的化合物14 10.2 g(16.7 mmol)、脫水四氫呋喃170 mL,將所獲得的溶液冷卻至-70℃後,加入正丁基鋰溶液(1.6 mol/L,己烷溶液)10.9 mL(17.5 mmol),進行1小時攪拌。Into a 300 mL three-necked flask in which the internal environment was replaced with nitrogen, 10.2 g (16.7 mmol) of compound 14 synthesized by the method described in paragraphs [0269] to [0274] of Japanese Patent Application Laid-Open No. 2012-36357 was added. ), 170 mL of dehydrated tetrahydrofuran, cool the obtained solution to -70°C, add 10.9 mL (17.5 mmol) of n-butyllithium solution (1.6 mol/L, hexane solution), and stir for 1 hour.

接著,於將反應液於-70℃下保持的狀態下,加入三甲氧基硼烷4.39 g(23.4 mmol),進行2小時攪拌。Next, while maintaining the reaction liquid at -70°C, 4.39 g (23.4 mmol) of trimethoxyborane was added, and stirring was performed for 2 hours.

繼而,於所獲得的反應液中放入2質量%乙酸水溶液41.5 g,使用乙酸乙酯進行分液操作,對有機層進行萃取。針對所獲得的有機層,加入甲苯(20 mL)、2-羥基亞甲基-2-甲基-1,3-丙二醇3.00 g(25.1 mmol),使用迪安-斯塔克管進行脫水操作30分鐘。進而,利用旋轉蒸發器除去溶媒,以綠色油的形式取得化合物15的粗生成物11.2 g。Then, 41.5 g of a 2 mass% acetic acid aqueous solution was added to the obtained reaction liquid, and liquid separation was performed using ethyl acetate, and the organic layer was extracted. To the obtained organic layer, add toluene (20 mL) and 3.00 g (25.1 mmol) of 2-hydroxymethylene-2-methyl-1,3-propanediol, and perform dehydration using a Dean-Stark tube 30 minute. Furthermore, the solvent was removed using a rotary evaporator, and 11.2 g of a crude product of compound 15 was obtained as a green oil.

<合成例11>(化合物17的合成) 使用下述式所表示的化合物15及化合物16合成下述式所表示的化合物17。 <Synthesis Example 11> (Synthesis of Compound 17) Compound 17 represented by the following formula was synthesized using compound 15 and compound 16 represented by the following formula.

[化88] [Chemical 88]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入藉由日本專利特開2014-31364號公報的段落[0202]至段落[0205]中記載的方法合成的化合物16 2.45 g(3.50 mmol)、化合物15 5.30 g(8.05 mmol)、四氫呋喃100 mL,利用氬氣進行30分鐘鼓泡,藉此進行脫氣。In a 300 mL four-necked flask in which the internal environment was replaced with nitrogen, 2.45 g of compound 16 synthesized by the method described in paragraphs [0202] to [0205] of Japanese Patent Application Laid-Open No. 2014-31364 ( 3.50 mmol), 5.30 g (8.05 mmol) of compound 15, and 100 mL of tetrahydrofuran, and degassed by bubbling argon gas for 30 minutes.

繼而,於四口燒瓶中,放入三(二亞苄基丙酮)二鈀(0)0.160 g(0.175 mmol,5 mol%)、三-第三丁基鏻四氟硼酸鹽0.213 g(0.700 mmol,20 mol%)、四氫呋喃15 mL,攪拌5分鐘。Then, in a four-necked flask, put 0.160 g (dibenzylideneacetone) dipalladium (0) (0.175 mmol, 5 mol%) and 0.213 g (0.700 mmol) tris-tert-butylphosphonium tetrafluoroborate. , 20 mol%), 15 mL of tetrahydrofuran, and stir for 5 minutes.

接著,於四口燒瓶中,加入3.0 M磷酸鉀水溶液12 mL,將反應液於設定溫度75℃的油浴中加熱1小時並且進行攪拌。Next, 12 mL of 3.0 M potassium phosphate aqueous solution was added to the four-necked flask, and the reaction solution was heated in an oil bath with a set temperature of 75° C. for 1 hour while stirring.

將反應液冷卻後,於四口燒瓶中,加入水100 mL、己烷100 mL,對有機層進行分液清洗即利用水進行三次清洗、進而利用飽和氯化鈉水溶液進行一次清洗的分液清洗。After the reaction solution was cooled, 100 mL of water and 100 mL of hexane were added to a four-necked flask, and the organic layer was washed three times with water and once with a saturated sodium chloride aqueous solution. .

使用無水硫酸鈉將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紅色油的形式獲得化合物17 4.97 g(3.11 mmol,產率88.8%)。The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was evaporated under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 4.97 g (3.11 mmol, yield 88.8%) of compound 17 in the form of red oil.

關於所獲得的化合物17,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.43 (s, 1H), 7.01 (d, J HH=5.2 Hz, 1H), 7.00 (d, J HH=5.2 Hz, 1H), 6.96 (s, 1H), 6.82 (s, 1H), 6.79 (s, 1H), 6.67 (d, J HH=4.8 Hz, 1H), 6.66 (d, J HH=4.8 Hz, 1H), 2.18 (m, 2H), 1.87 (m, 8H), 1.71 (m, 2H), 1.23 (br, 120H), 0.86 (m, 18H). The NMR spectrum of the obtained compound 17 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.43 (s, 1H), 7.01 (d, J HH =5.2 Hz, 1H), 7.00 (d, J HH =5.2 Hz, 1H), 6.96 (s, 1H), 6.82 (s, 1H), 6.79 (s, 1H), 6.67 (d, J HH =4.8 Hz, 1H), 6.66 (d, J HH =4.8 Hz, 1H), 2.18 (m, 2H), 1.87 (m , 8H), 1.71 (m, 2H), 1.23 (br, 120H), 0.86 (m, 18H).

<合成例12>(化合物18的合成) 使用下述式所表示的化合物17合成下述式所表示的化合物18。 <Synthesis Example 12> (Synthesis of Compound 18) Compound 18 represented by the following formula was synthesized using compound 17 represented by the following formula.

[化89] [Chemical 89]

於利用氮氣置換了內部的環境的300 mL三口燒瓶中,放入化合物17 4.96 g(3.10 mmol)、二氯甲烷150 mL,於室溫下攪拌10分鐘使化合物17溶解。In a 300 mL three-necked flask whose internal environment was replaced with nitrogen, 4.96 g (3.10 mmol) of compound 17 and 150 mL of methylene chloride were placed, and the mixture was stirred at room temperature for 10 minutes to dissolve compound 17.

接著,於三口燒瓶中,放入(氯亞甲基)二甲基氯化銨1.19 g(9.30 mmol),於設定溫度40℃的油浴中加熱2小時並且進行攪拌。Next, 1.19 g (9.30 mmol) of (chloromethylene)dimethylammonium chloride was placed in a three-necked flask, and the mixture was heated in an oil bath with a set temperature of 40° C. for 2 hours while stirring.

繼而,將反應液冷卻後,加入水20 mL,對有機層利用飽和氯化鈉水溶液進行兩次分液清洗。使用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。Then, after cooling the reaction solution, 20 mL of water was added, and the organic layer was separated and washed twice with a saturated sodium chloride aqueous solution. The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色固體的形式獲得化合物18 4.81 g(2.90 mmol,產率93.7%)。The obtained crude product was purified using a silica gel column to obtain 4.81 g (2.90 mmol, yield 93.7%) of compound 18 as a dark red solid.

關於所獲得的化合物18,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.783 (s, 1H) , 9.775 (s, 1H) , 7.53 (s, 1H) , 7.28 (s, 1H), 7.27 (s, 1H) , 7.06 (s, 1H) , 6.87 (s, 1H), 6.85 (s, 1H) , 2.22 (m, 2H), 1.90 (m, 8H), 1.74 (m, 2H), 1.21 (br, 120H), 0.86 (m, 18H). The NMR spectrum of the obtained compound 18 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.783 (s, 1H) , 9.775 (s, 1H) , 7.53 (s, 1H) , 7.28 (s, 1H) , 7.27 (s, 1H) , 7.06 (s, 1H ), 6.87 (s, 1H), 6.85 (s, 1H), 2.22 (m, 2H), 1.90 (m, 8H), 1.74 (m, 2H), 1.21 (br, 120H), 0.86 (m, 18H) .

<合成例13>(化合物N-3的合成) 使用下述式所表示的化合物18及化合物13合成下述式所表示的化合物N-3。 <Synthesis Example 13> (Synthesis of Compound N-3) Compound N-3 represented by the following formula was synthesized using compound 18 represented by the following formula and compound 13.

[化90] [Chemical 90]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物18 0.828 g(0.500 mmol)、化合物19 0.395 g(1.50 mmol)、氯仿25 mL、吡啶0.396 g(5.00 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 0.828 g (0.500 mmol) of compound 18, 0.395 g (1.50 mmol) of compound 19, 25 mL of chloroform, and 0.396 g of pyridine (5.00 mmol) were placed, and the mixture was placed at 65 Heat in an oil bath at ℃ for 2 hours with stirring.

將所獲得的溶液冷卻至常溫,加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗,獲得有機層。The obtained solution was cooled to normal temperature, and water was added to stop the reaction. The obtained solution was extracted with chloroform, washed twice with water, and once with a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深藍綠色固體的形式獲得化合物N-3 0.752 g(0.350 mmol,產率70.1%)。The obtained crude product was purified using a silica gel column to obtain 0.752 g (0.350 mmol, yield 70.1%) of compound N-3 as a dark blue-green solid.

關於所獲得的化合物N-3,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.74 (s, 4H), 7.92 (s, 1H), 7.91 (s, 1H), 7.62 (s, 1H), 7.40 (s, 1H), 7.39 (s, 1H), 7.15 (s, 1H), 6.93 (s, 1H), 6.91 (s, 1H), 2.26 (m, 2H), 1.93 (m, 8H), 1.79 (m, 2H), 1.20 (br, 120H), 0.86 (m, 18H). The NMR spectrum of the obtained compound N-3 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.74 (s, 4H), 7.92 (s, 1H), 7.91 (s, 1H), 7.62 (s, 1H), 7.40 (s, 1H), 7.39 (s, 1H ), 7.15 (s, 1H), 6.93 (s, 1H), 6.91 (s, 1H), 2.26 (m, 2H), 1.93 (m, 8H), 1.79 (m, 2H), 1.20 (br, 120H) , 0.86 (m, 18H).

<合成例14>(化合物21的合成) 使用下述式所表示的化合物20合成下述式所表示的化合物21。 <Synthesis Example 14> (Synthesis of Compound 21) Compound 21 represented by the following formula was synthesized using compound 20 represented by the following formula.

[化91] [Chemical 91]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入藉由國際公開第2011/052709號的段落[0261]至[0271]中記載的方法合成的化合物20 5.02 g(12.0 mmol)、四氫呋喃100 mL,冷卻至-30℃。In a 300 mL four-necked flask in which the internal environment was replaced with nitrogen, 5.02 g (12.0 mmol) of compound 20 synthesized by the method described in paragraphs [0261] to [0271] of International Publication No. 2011/052709 was placed. , 100 mL of tetrahydrofuran, cool to -30°C.

接著,於四口燒瓶中,加入N-溴代琥珀醯亞胺2.11 g(11.9 mmol),於-30℃下攪拌6小時。Next, 2.11 g (11.9 mmol) of N-bromosuccinimide was added to the four-necked flask, and the mixture was stirred at -30°C for 6 hours.

繼而,將所獲得的溶液升溫至常溫,於常溫下進而攪拌3小時並使其反應後,進而加入3%亞硫酸鈉水溶液,藉此使反應停止。Then, the temperature of the obtained solution was raised to normal temperature, and the mixture was further stirred at normal temperature for 3 hours to react, and then 3% sodium sulfite aqueous solution was added to stop the reaction.

利用己烷對所獲得的反應液進行萃取後,利用水及飽和氯化鈉水溶液進行清洗,獲得有機層。The obtained reaction liquid was extracted with hexane, and then washed with water and a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以淡黃色油的形式獲得化合物21 4.66 g(9.36 mmol,產率78.0%)。The obtained crude product was purified using a silica gel column to obtain 4.66 g (9.36 mmol, yield 78.0%) of compound 21 as a light yellow oil.

關於所獲得的化合物21,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 6.98 (d, J HH=4.8 Hz, 1H), 6.66 (s, 1H),6.65 (d, J HH=4.8 Hz, 1H), 1.87-1.74(m, 4H), 1.41-1.23 (br, 24H), 0.86 (t, 6H). The NMR spectrum of the obtained compound 21 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 6.98 (d, J HH =4.8 Hz, 1H), 6.66 (s, 1H), 6.65 (d, J HH =4.8 Hz, 1H), 1.87-1.74 (m, 4H ), 1.41-1.23 (br, 24H), 0.86 (t, 6H).

<合成例15>(化合物22的合成) 使用下述式所表示的化合物21合成下述式所表示的化合物22。 <Synthesis Example 15> (Synthesis of Compound 22) Compound 22 represented by the following formula was synthesized using compound 21 represented by the following formula.

[化92] [Chemical 92]

於利用氮氣置換了內部的環境的100 mL三口燒瓶中,加入化合物21 4.59 g(9.23 mmol)、脫水四氫呋喃90 mL,將所獲得的溶液冷卻至-70℃後,加入正丁基鋰溶液(1.64 mol/L,己烷溶液)5.8 mL,進行1小時攪拌。In a 100 mL three-necked flask whose internal environment was replaced with nitrogen, 4.59 g (9.23 mmol) of compound 21 and 90 mL of dehydrated tetrahydrofuran were added. After cooling the obtained solution to -70°C, n-butyllithium solution (1.64 mol/L, hexane solution) 5.8 mL, stir for 1 hour.

接著,於將反應液於-70℃下保持的狀態下,加入三甲氧基硼烷2.43 g(12.9 mmol),進行2小時攪拌。Next, while maintaining the reaction liquid at -70°C, 2.43 g (12.9 mmol) of trimethoxyborane was added, and stirring was performed for 2 hours.

繼而,於所獲得的反應液中放入10質量%乙酸水溶液(30 mL),使用乙酸乙酯進行分液操作,對有機層進行萃取。針對所獲得的有機層,加入甲苯(20 mL)、2-羥基亞甲基-2-甲基-1,3-丙二醇1.66 g(13.82 mmol),使用迪安-斯塔克管進行脫水操作30分鐘。進而,利用旋轉蒸發器除去溶媒,以綠色油的形式取得化合物22的粗生成物5.00 g。Then, a 10 mass% acetic acid aqueous solution (30 mL) was added to the obtained reaction liquid, and liquid separation was performed using ethyl acetate, and the organic layer was extracted. To the obtained organic layer, add toluene (20 mL) and 1.66 g (13.82 mmol) of 2-hydroxymethylene-2-methyl-1,3-propanediol, and perform dehydration using a Dean-Stark tube 30 minute. Furthermore, the solvent was removed using a rotary evaporator, and 5.00 g of a crude product of compound 22 was obtained as a green oil.

<合成例16>(化合物24的合成) 使用下述式所表示的化合物22及化合物23合成下述式所表示的化合物24。 <Synthesis Example 16> (Synthesis of Compound 24) Compound 24 represented by the following formula was synthesized using compound 22 and compound 23 represented by the following formula.

[化93] [Chemical 93]

於利用氮氣置換了內部的環境的200 mL四口燒瓶中,放入藉由文獻(ACS歐米伽(ACS Omega)2017, 2, 4347.)中記載的方法合成的化合物23 1.65 g(2.80 mmol)、化合物22 3.83 g(7.00 mmol)、四氫呋喃93 mL,利用氬氣進行30分鐘鼓泡,藉此進行脫氣。In a 200 mL four-necked flask whose internal environment was replaced with nitrogen, 1.65 g (2.80 mmol) of compound 23 synthesized by the method described in the literature (ACS Omega 2017, 2, 4347.) was placed. , 3.83 g (7.00 mmol) of compound 22, 93 mL of tetrahydrofuran, and degassed by bubbling argon gas for 30 minutes.

繼而,於四口燒瓶中,放入三(二亞苄基丙酮)二鈀(0)0.128 g(0.140 mmol,5 mol%)、三-第三丁基鏻四氟硼酸鹽0.170 g(0.560 mmol,20 mol%)、四氫呋喃5 mL,攪拌5分鐘。Then, in a four-necked flask, add 0.128 g (0.140 mmol, 5 mol%) tris(dibenzylideneacetone)dipalladium(0) and 0.170 g (0.560 mmol) tris-tert-butylphosphonium tetrafluoroborate. , 20 mol%), 5 mL of tetrahydrofuran, and stir for 5 minutes.

接著,於四口燒瓶中,加入3.0 M磷酸鉀水溶液9.3 mL,將反應液於設定溫度50℃的油浴中加熱3小時並且進行攪拌。Next, 9.3 mL of 3.0 M potassium phosphate aqueous solution was added to the four-necked flask, and the reaction solution was heated in an oil bath with a set temperature of 50° C. for 3 hours while stirring.

將反應液冷卻後,於四口燒瓶中,加入水100 mL、己烷100 mL,對有機層利用水進行三次分液清洗,利用飽和氯化鈉水溶液進行一次分液清洗。After the reaction solution was cooled, 100 mL of water and 100 mL of hexane were added to a four-necked flask, and the organic layer was washed three times with water and once with saturated sodium chloride aqueous solution.

使用無水硫酸鈉將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紅色油的形式獲得化合物24 3.21 g(2.54 mmol,產率90.6%)。The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was evaporated under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 3.21 g (2.54 mmol, yield 90.6%) of compound 24 in the form of red oil.

關於所獲得的化合物24,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.44 (s, 1H), 7.03 (d, J HH=4.0 Hz, 1H), 7.02 (d, J HH=4.0 Hz, 1H), 6.97 (s, 1H), 6.83 (s, 1H), 6.80 (s, 1H), 6.89 (d, J HH=4.8 Hz, 1H), 6.68 (d, J HH=4.8 Hz, 1H),2.23-2.16(m, 2H), 1.94-1.81 (m, 8H), 1.77-1.69 (m, 2H), 1.44-1.11 (br, 72H), 0.86-0.80 (m, 18H). The NMR spectrum of the obtained compound 24 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.44 (s, 1H), 7.03 (d, J HH =4.0 Hz, 1H), 7.02 (d, J HH =4.0 Hz, 1H), 6.97 (s, 1H), 6.83 (s, 1H), 6.80 (s, 1H), 6.89 (d, J HH =4.8 Hz, 1H), 6.68 (d, J HH =4.8 Hz, 1H), 2.23-2.16 (m, 2H), 1.94 -1.81 (m, 8H), 1.77-1.69 (m, 2H), 1.44-1.11 (br, 72H), 0.86-0.80 (m, 18H).

<合成例17>(化合物25的合成) 使用下述式所表示的化合物24合成下述式所表示的化合物25。 <Synthesis Example 17> (Synthesis of Compound 25) Compound 25 represented by the following formula was synthesized using compound 24 represented by the following formula.

[化94] [Chemical 94]

於利用氮氣置換了內部的環境的100 mL三口燒瓶中,放入化合物24 3.41 g(2.70 mmol)、氯仿80 mL,於常溫下攪拌10分鐘使化合物66溶解。In a 100 mL three-necked flask whose internal environment was replaced with nitrogen, 3.41 g (2.70 mmol) of compound 24 and 80 mL of chloroform were placed, and the mixture was stirred at room temperature for 10 minutes to dissolve compound 66.

接著,於三口燒瓶中,放入(氯亞甲基)二甲基氯化銨1.04 g(8.10 mmol),於設定溫度65℃的油浴中加熱2小時並且進行攪拌。Next, 1.04 g (8.10 mmol) of (chloromethylene)dimethylammonium chloride was placed in a three-necked flask, and the mixture was heated in an oil bath with a set temperature of 65° C. for 2 hours while stirring.

繼而,將反應液冷卻後,加入水20 mL,對有機層利用飽和氯化鈉水溶液進行兩次分液清洗。使用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。Then, after cooling the reaction solution, 20 mL of water was added, and the organic layer was separated and washed twice with a saturated sodium chloride aqueous solution. The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色固體的形式獲得化合物25 2.97 g(2.25 mmol,產率83.3%)。The obtained crude product was purified using a silica gel column to obtain 2.97 g (2.25 mmol, yield 83.3%) of compound 25 as a dark red solid.

關於所獲得的化合物25,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.79 (s, 1H), 9.78 (s, 1H), 7.53 (s, 1H), 7.29 (s, 1H), 7.28 (s, 1H), 7.06 (s, 1H), 6.87 (s, 1H), 2.25-2.17(m, 2H), 1.96-1.84 (m, 8H), 1.78-1.71 (m, 2H), 1.44-1.12 (br, 72H), 0.87-0.79 (m, 18H). The NMR spectrum of the obtained compound 25 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.79 (s, 1H), 9.78 (s, 1H), 7.53 (s, 1H), 7.29 (s, 1H), 7.28 (s, 1H), 7.06 (s, 1H ), 6.87 (s, 1H), 2.25-2.17(m, 2H), 1.96-1.84 (m, 8H), 1.78-1.71 (m, 2H), 1.44-1.12 (br, 72H), 0.87-0.79 (m , 18H).

<合成例18>(化合物N-4的合成) 使用下述式所表示的化合物13及化合物25合成下述式所表示的化合物N-4。 <Synthesis Example 18> (Synthesis of Compound N-4) Compound N-4 represented by the following formula was synthesized using compound 13 represented by the following formula and compound 25.

[化95] [Chemical 95]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物67 0.858 g(0.650 mmol)、化合物12 0.513 g(1.95 mmol)、氯仿30 mL、吡啶0.514 g(6.50 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 0.858 g (0.650 mmol) of compound 67, 0.513 g (1.95 mmol) of compound 12, 30 mL of chloroform, and 0.514 g (6.50 mmol) of pyridine were placed, and the mixture was placed at 65 Heat in an oil bath at ℃ for 2 hours with stirring.

將所獲得的溶液冷卻至常溫,加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗,獲得有機層。The obtained solution was cooled to normal temperature, and water was added to stop the reaction. The obtained solution was extracted with chloroform, washed twice with water, and once with a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深藍綠色固體的形式獲得化合物N-4 0.967 g(0.534 mmol,產率82.2%)。The obtained crude product was purified using a silica gel column to obtain 0.967 g (0.534 mmol, yield 82.2%) of compound N-4 as a dark blue-green solid.

關於所獲得的化合物N-4,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.74 (s, 4H), 7.92 (s, 1H), 7.91 (s, 1H), 7.63 (s, 1H), 7.40 (s, 1H), 7.38 (s, 1H), 7.15 (s, 1H), 6.94 (s, 1H), 6.91 (s, 1H), 2.29-2.22(m, 2H), 1.99-1.86 (m, 8H), 1.82-1.75 (m, 2H), 1.44-1.14 (br, 72H), 0.92-0.80 (m, 18H). Regarding the obtained compound N-4, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.74 (s, 4H), 7.92 (s, 1H), 7.91 (s, 1H), 7.63 (s, 1H), 7.40 (s, 1H), 7.38 (s, 1H ), 7.15 (s, 1H), 6.94 (s, 1H), 6.91 (s, 1H), 2.29-2.22(m, 2H), 1.99-1.86 (m, 8H), 1.82-1.75 (m, 2H), 1.44-1.14 (br, 72H), 0.92-0.80 (m, 18H).

<合成例19>(化合物27的合成) 使用下述式所表示的化合物26合成下述式所表示的化合物27。 <Synthesis Example 19> (Synthesis of Compound 27) Compound 27 represented by the following formula was synthesized using compound 26 represented by the following formula.

[化96] [Chemical 96]

於利用氮氣置換了內部的環境的100 mL三口燒瓶中,放入化合物26 0.746 g(0.450 mmol)、三丁基(1,3-二氧雜環戊烷-2-基甲基)溴化鏻0.349 g(0.945 mmol)、四氫呋喃20 mL,冷卻至0℃。In a 100 mL three-necked flask in which the internal environment was replaced with nitrogen, 0.746 g (0.450 mmol) of compound 26 and tributyl(1,3-dioxolan-2-ylmethyl)phosphonium bromide were placed 0.349 g (0.945 mmol), 20 mL of tetrahydrofuran, cool to 0°C.

接著,放入氫化鈉0.072 g(1.80 mmol),升溫至常溫,攪拌一個半小時。Then, add 0.072 g (1.80 mmol) of sodium hydride, raise the temperature to room temperature, and stir for one and a half hours.

將反應液再次冷卻至0℃,加入10%鹽酸,升溫至常溫,攪拌2小時。於反應液中進而加入己烷15 mL,對有機層利用水進行一次分液清洗,利用飽和氯化鈉水溶液進行兩次分液清洗。使用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。Cool the reaction solution to 0°C again, add 10% hydrochloric acid, raise the temperature to room temperature, and stir for 2 hours. Further, 15 mL of hexane was added to the reaction solution, and the organic layer was separated and washed once with water and twice with saturated sodium chloride aqueous solution. The obtained solution was dried using anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紫紅色油的形式獲得化合物27 0.703 g(0.412 mmol,產率91.4%)。The obtained crude product was purified using a silica gel column to obtain 0.703 g (0.412 mmol, yield 91.4%) of compound 27 as a purple-red oil.

關於所獲得的化合物27,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.614 (d, J HH=8.0 Hz, 1H), 9610 (d, J HH=8.0 Hz, 1H), 7.50 (s, 1H), 7.433 (d, J HH=15.6 Hz, 1H), 7.426 (d, J HH=15.6 Hz, 1H), 7.03 (s, 1H), 6.93 (s, 1H), 6.92 (s, 1H), 6.85 (s, 1H), 6.83 (s, 1H), 6.457 (dd, J HH=8.0 Hz, 15.6 Hz, 1H), 6.453 (dd, J HH=8.0 Hz, 15.6 Hz, 1H), 2.24-2.17 (m, 2H), 1.95-1.82 (m, 8H), 1.78-1.70 (m, 2H), 1.41-1.11 (br, 120H), 0.88-0.83 (m, 18H). The NMR spectrum of the obtained compound 27 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.614 (d, J HH =8.0 Hz, 1H), 9610 (d, J HH =8.0 Hz, 1H), 7.50 (s, 1H), 7.433 (d, J HH = 15.6 Hz, 1H), 7.426 (d, J HH =15.6 Hz, 1H), 7.03 (s, 1H), 6.93 (s, 1H), 6.92 (s, 1H), 6.85 (s, 1H), 6.83 (s , 1H), 6.457 (dd, J HH =8.0 Hz, 15.6 Hz, 1H), 6.453 (dd, J HH =8.0 Hz, 15.6 Hz, 1H), 2.24-2.17 (m, 2H), 1.95-1.82 (m , 8H), 1.78-1.70 (m, 2H), 1.41-1.11 (br, 120H), 0.88-0.83 (m, 18H).

<合成例20>(化合物N-5的合成) 使用下述式所表示的化合物13及化合物27合成下述式所表示的化合物N-5。 <Synthesis Example 20> (Synthesis of Compound N-5) Compound N-5 represented by the following formula was synthesized using compound 13 represented by the following formula and compound 27.

[化97] [Chemical 97]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物7 1.00 g(0.585 mmol)、化合物13 0.462 g(0.585 mmol)、氯仿29 mL、吡啶0.463 g(5.85 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 100 mL four-necked flask in which the internal environment has been replaced with nitrogen, 1.00 g (0.585 mmol) of compound 7, 0.462 g (0.585 mmol) of compound 13, 29 mL of chloroform, and 0.463 g of pyridine (5.85 mmol) were placed, and the mixture was placed at 65 Heat in an oil bath at ℃ for 2 hours with stirring.

將所獲得的溶液冷卻至常溫,加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗,獲得有機層。The obtained solution was cooled to normal temperature, and water was added to stop the reaction. The obtained solution was extracted with chloroform, washed twice with water, and once with a saturated sodium chloride aqueous solution to obtain an organic layer.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深藍綠色固體的形式獲得化合物N-5 0.982 g(0.447 mmol,產率76.4%)。The obtained crude product was purified using a silica gel column to obtain 0.982 g (0.447 mmol, yield 76.4%) of compound N-5 as a dark blue-green solid.

關於所獲得的化合物N-5,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.74 (s, 2H), 8.55-8.40 (m, 4H), 7.92 (s, 2H), 7.55 (s, 1H), 7.41 (d, J HH=14 Hz, 2H), 7.06 (d, J HH=14 Hz, 2H), 7.05 (s, 2H), 6.87 (s, 2H), 6.85 (s, 2H), 2.28-2.20 (m, 2H), 1.93-1.89 (m, 8H), 1.81-1.74 (m, 2H), 1.27-1.14 (br, 120H), 0.87-0.83 (m, 18H). Regarding the obtained compound N-5, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.74 (s, 2H), 8.55-8.40 (m, 4H), 7.92 (s, 2H), 7.55 (s, 1H), 7.41 (d, J HH =14 Hz, 2H), 7.06 (d, J HH =14 Hz, 2H), 7.05 (s, 2H), 6.87 (s, 2H), 6.85 (s, 2H), 2.28-2.20 (m, 2H), 1.93-1.89 ( m, 8H), 1.81-1.74 (m, 2H), 1.27-1.14 (br, 120H), 0.87-0.83 (m, 18H).

<合成例21>(化合物29的合成) 由下述式所表示的化合物28合成下述式所表示的化合物29。 <Synthesis Example 21> (Synthesis of Compound 29) Compound 29 represented by the following formula was synthesized from compound 28 represented by the following formula.

[化98] [Chemical 98]

於利用氮氣置換了內部的環境的1 L四口燒瓶中,放入藉由日本專利特開2014-31364號公報的段落[0203]中記載的方法合成的化合物28 13.30 g(24.50 mmol)、四氫呋喃490 mL,冷卻至0℃。In a 1 L four-necked flask in which the internal environment was replaced with nitrogen, 13.30 g (24.50 mmol) of compound 28 synthesized by the method described in paragraph [0203] of Japanese Patent Application Laid-Open No. 2014-31364 and tetrahydrofuran were placed. 490 mL, cool to 0°C.

接著,於四口燒瓶中,加入N-溴代琥珀醯亞胺4.361 g(24.50 mmol),於0℃下攪拌4小時。Next, 4.361 g (24.50 mmol) of N-bromosuccinimide was added to the four-necked flask, and the mixture was stirred at 0°C for 4 hours.

繼而,將所獲得的溶液升溫至常溫,於常溫下進而攪拌3小時並使其反應後,進而加入3%亞硫酸鈉水溶液,藉此使反應停止。Then, the temperature of the obtained solution was raised to normal temperature, and the mixture was further stirred at normal temperature for 3 hours to react, and then 3% sodium sulfite aqueous solution was added to stop the reaction.

利用己烷對所獲得的反應液進行萃取後,利用水及飽和氯化鈉水溶液進行清洗。The obtained reaction liquid was extracted with hexane, and then washed with water and a saturated sodium chloride aqueous solution.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以淺黃色油的形式獲得化合物29 10.1 g(16.2 mmol,產率66.3%)。The obtained crude product was purified using a silica gel column to obtain 10.1 g (16.2 mmol, yield 66.3%) of compound 29 as a light yellow oil.

關於所獲得的化合物29,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.44 (d, J HH=5.6 Hz, 1H), 7.07 (d, J HH=5.6 Hz, 1H), 6.95 (s, 1H), 2.16 (m, 2H), 1.72 (m, 2H), 1.21 (br, 40H), 0.86 (t, 6H). Regarding the obtained compound 29, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.44 (d, J HH =5.6 Hz, 1H), 7.07 (d, J HH =5.6 Hz, 1H), 6.95 (s, 1H), 2.16 (m, 2H), 1.72 (m, 2H), 1.21 (br, 40H), 0.86 (t, 6H).

<合成例22>(化合31的合成) 使用下述式所表示的化合物29及化合物30合成下述式所表示的化合物31。 <Synthesis Example 22> (Synthesis of Compound 31) Compound 31 represented by the following formula was synthesized using compound 29 represented by the following formula and compound 30.

[化99] [Chemical 99]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入藉由國際公開第2011/052709號的段落[0139]至[0141]中記載的方法合成的化合物30 5.23 g(6.65 mmol)、化合物29 9.51 g(15.3 mmol)、四氫萘120 mL,利用氬氣進行30分鐘鼓泡,藉此進行脫氣。In a 300 mL four-necked flask in which the internal environment was replaced with nitrogen, 5.23 g (6.65 mmol) of compound 30 synthesized by the method described in paragraphs [0139] to [0141] of International Publication No. 2011/052709 was placed. , Compound 29 9.51 g (15.3 mmol), tetralin 120 mL, and degassed by bubbling argon gas for 30 minutes.

接著,於四口燒瓶中,放入三(二亞苄基丙酮)二鈀(0)0.304 g(0.333 mmol,5 mol%)、三-第三丁基鏻四氟硼酸鹽0.405 g(1.33 mmol,20 mol%)、四氫萘13 mL,攪拌5分鐘。Then, in a four-necked flask, put 0.304 g (dibenzylideneacetone) dipalladium (0) (0.333 mmol, 5 mol%) and 0.405 g (1.33 mmol) tris-tert-butylphosphonium tetrafluoroborate. , 20 mol%), 13 mL of tetralin, stir for 5 minutes.

繼而,於四口燒瓶中,進而加入3.0 M磷酸鉀水溶液22 mL,將反應液於設定溫度75℃的油浴中加熱1小時並且進行攪拌。Then, 22 mL of 3.0 M potassium phosphate aqueous solution was added to the four-necked flask, and the reaction solution was heated in an oil bath with a set temperature of 75° C. for 1 hour while stirring.

將反應液冷卻後,加入水100 mL、己烷100 mL,進而利用水進行三次分液清洗,利用飽和氯化鈉水溶液進行一次分液清洗。After the reaction solution was cooled, 100 mL of water and 100 mL of hexane were added, and then three liquid separation and washing were performed with water, and one liquid separation and washing was performed with a saturated sodium chloride aqueous solution.

利用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。The obtained solution was dried over anhydrous sodium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色油的形式獲得化合物31 9.83 g(6.09 mmol,產率91.7%)。The obtained crude product was purified using a silica gel column to obtain 9.83 g (6.09 mmol, yield 91.7%) of compound 31 as a dark red oil.

關於所獲得的化合物31,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.46 (d, J HH=5.2 Hz, 1H), 7.45 (d, J HH=5.2 Hz, 1H), 7.07 (d, J HH=5.2 Hz, 1H), 7.06 (d, J HH=5.2 Hz, 1H), 7.02 (s, 1H), 6.98 (s, 1H), 6.86 (s, 1H), 6.84 (s, 1H), 2.19 (m, 4H), 1.91 (m, 4H), 1.73 (m, 4H), 1.18 (br, 120H), 0.86 (t, 18H). The NMR spectrum of the obtained compound 31 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.46 (d, J HH =5.2 Hz, 1H), 7.45 (d, J HH =5.2 Hz, 1H), 7.07 (d, J HH =5.2 Hz, 1H), 7.06 (d, J HH =5.2 Hz, 1H), 7.02 (s, 1H), 6.98 (s, 1H), 6.86 (s, 1H), 6.84 (s, 1H), 2.19 (m, 4H), 1.91 (m , 4H), 1.73 (m, 4H), 1.18 (br, 120H), 0.86 (t, 18H).

<合成例23>(化合物32的合成) 由下述式所表示的化合物31合成下述式所表示的化合物32。 <Synthesis Example 23> (Synthesis of Compound 32) Compound 32 represented by the following formula is synthesized from compound 31 represented by the following formula.

[化100] [Chemical 100]

於利用氮氣置換了內部的環境的300 mL四口燒瓶中,放入化合物31 9.68 g(6.00 mmol)、氯仿120 mL,於常溫下攪拌10分鐘使其溶解。In a 300 mL four-necked flask whose internal environment was replaced with nitrogen, 9.68 g (6.00 mmol) of compound 31 and 120 mL of chloroform were placed, and stirred at room temperature for 10 minutes to dissolve.

接著,於四口燒瓶中,放入(氯亞甲基)二甲基氯化銨5.38 g(42.0 mmol),於設定溫度65℃的油浴中加熱合計20小時並且進行攪拌。Next, 5.38 g (42.0 mmol) of (chloromethylene)dimethylammonium chloride was placed in a four-necked flask, and the mixture was heated in an oil bath with a set temperature of 65° C. for a total of 20 hours while stirring.

將反應液冷卻後,加入水100 mL,利用飽和氯化鈉水溶液進行兩次分液清洗。After the reaction solution was cooled, 100 mL of water was added, and the mixture was separated and washed twice with saturated sodium chloride aqueous solution.

利用無水硫酸鈉將所獲得的溶液加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。The obtained solution was dried using anhydrous sodium sulfate and filtered, and then the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紫色油的形式獲得化合物32 5.90 g(3.53 mmol,產率58.9%)。The obtained crude product was purified using a silica gel column to obtain 5.90 g (3.53 mmol, yield 58.9%) of compound 32 as purple oil.

關於所獲得的化合物32,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.91 (s, 2H), 8.08 (s, 1H), 8.07 (s, 1H), 7.06 (s, 1H), 7.02 (s, 1H), 6.93 (s, 1H), 6.91 (s, 1H), 2.22 (m, 4H), 1.92 (m, 4H), 1.75 (m, 4H), 1.21 (br, 120H), 0.85 (t, 18H). The NMR spectrum of the obtained compound 32 was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.91 (s, 2H), 8.08 (s, 1H), 8.07 (s, 1H), 7.06 (s, 1H), 7.02 (s, 1H), 6.93 (s, 1H ), 6.91 (s, 1H), 2.22 (m, 4H), 1.92 (m, 4H), 1.75 (m, 4H), 1.21 (br, 120H), 0.85 (t, 18H).

<合成例24>(化合物N-6的合成) 使用下述式所表示的化合物32及化合物13合成下述式所表示的化合物N-6。 <Synthesis Example 24> (Synthesis of Compound N-6) Compound N-6 represented by the following formula was synthesized using compound 32 represented by the following formula and compound 13.

[化101] [Chemistry 101]

於利用氮氣置換了內部的環境的200 mL四口燒瓶中,放入化合物32 2.25 g(1.35 mmol)、藉由先進材料(Adv. Mater.)2017, 29, 1703080.中記載的方法合成的化合物13 0.888 g(3.38 mmol)、氯仿68 mL、吡啶1.07 g(13.5 mmol),於65℃的油浴中加熱2小時並且進行攪拌。In a 200 mL four-necked flask in which the internal environment was replaced with nitrogen, 2.25 g (1.35 mmol) of Compound 32, a compound synthesized by the method described in Adv. Mater. 2017, 29, 1703080. was placed. 13 0.888 g (3.38 mmol), 68 mL chloroform, 1.07 g (13.5 mmol) pyridine, heated in an oil bath at 65°C for 2 hours and stirred.

將所獲得的溶液冷卻至常溫,並加入水,藉此使反應停止。利用氯仿對所獲得的溶液進行萃取後,利用水進行兩次清洗,利用飽和氯化鈉水溶液進行一次清洗。The obtained solution was cooled to normal temperature, and water was added to stop the reaction. After the obtained solution was extracted with chloroform, it was washed twice with water and once with a saturated sodium chloride aqueous solution.

接著,利用硫酸鎂將所獲得的有機層加以乾燥並進行過濾,進而於減壓下蒸餾除去溶媒。Next, the obtained organic layer was dried using magnesium sulfate and filtered, and the solvent was further distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深藍綠色固體的形式獲得化合物N-6 1.91 g(0.886 mmol,產率65.6%)。The obtained crude product was purified using a silica gel column to obtain 1.91 g (0.886 mmol, yield 65.6%) of compound N-6 as a dark blue-green solid.

關於所獲得的化合物N-6,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.90 (s, 1H), 8.89 (s, 1H), 8.81 (s, 1H), 8.17 (s, 1H), 7.99 (s, 1H), 7.98 (s, 1H), 7.11 (s, 1H), 7.07 (s, 1H), 6.98 (s, 1H), 6.98 (s, 1H), 2.25 (m, 4H), 1.94 (m, 4H), 1.77 (m, 4H), 1.24 (br, 120H), 0.86 (m, 18H). Regarding the obtained compound N-6, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.90 (s, 1H), 8.89 (s, 1H), 8.81 (s, 1H), 8.17 (s, 1H), 7.99 (s, 1H), 7.98 (s, 1H ), 7.11 (s, 1H), 7.07 (s, 1H), 6.98 (s, 1H), 6.98 (s, 1H), 2.25 (m, 4H), 1.94 (m, 4H), 1.77 (m, 4H) , 1.24 (br, 120H), 0.86 (m, 18H).

<合成例25>(化合物c的合成) 使用下述式所表示的2-溴-3-(2-乙基己基)噻吩(化合物a)及2,5-二溴噻吩(化合物b)合成下述式所表示的化合物c。 <Synthesis Example 25> (Synthesis of compound c) Compound c represented by the following formula was synthesized using 2-bromo-3-(2-ethylhexyl)thiophene (compound a) represented by the following formula and 2,5-dibromothiophene (compound b).

[化102] [Chemical 102]

於利用氮氣置換了內部的環境的50 mL四口燒瓶中,放入鎂0.353 g(14.5 mmol)、脫水二乙醚10 mL、少量的碘,於常溫下攪拌。In a 50 mL four-necked flask whose internal environment was replaced with nitrogen, 0.353 g (14.5 mmol) of magnesium, 10 mL of dehydrated diethyl ether, and a small amount of iodine were placed, and the flask was stirred at room temperature.

接著,於滴加漏斗中,放入2-溴-3-(2-乙基己基)噻吩2.00 g(7.27 mmol)、脫水二乙醚10 mL,一邊調整滴加速度一邊一點點地滴加至50 mL四口燒瓶中,以使內溫成為30℃以下。Next, put 2.00 g (7.27 mmol) of 2-bromo-3-(2-ethylhexyl)thiophene and 10 mL of dehydrated diethyl ether into the dropping funnel, and add dropwise to 50 mL while adjusting the dropping speed. in a four-necked flask so that the internal temperature becomes below 30°C.

繼而,於設定溫度43℃的油浴中加熱回流2小時後,將反應液冷卻至常溫,將所獲得的溶液作為格任亞(Grignard)反應液。Then, after heating and refluxing for 2 hours in an oil bath with a set temperature of 43°C, the reaction solution was cooled to normal temperature, and the obtained solution was used as a Grignard reaction solution.

於利用氮氣將內部的環境置換為氮氣的100 mL四口燒瓶中,放入2,5-二溴噻吩1.76 g(7.27 mmol)、[1,1'-雙(二苯基膦基)二茂鐵]二氯化鈀(II)0.200 g(0.273 mmol)、脫水二乙醚20 mL並進行攪拌。In a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 1.76 g (7.27 mmol) of 2,5-dibromothiophene and [1,1'-bis(diphenylphosphino)diocene were placed Iron] palladium (II) dichloride 0.200 g (0.273 mmol), dehydrated diethyl ether 20 mL and stir.

於利用冰水浴冷卻後,向100 mL四口燒瓶中滴加格任亞反應液。保溫2小時後,將100 mL四口燒瓶自冰水浴中取出,將反應液升溫至常溫。After cooling in an ice-water bath, add the Grenya reaction solution dropwise into the 100 mL four-necked flask. After incubation for 2 hours, take out the 100 mL four-necked flask from the ice water bath, and warm the reaction solution to room temperature.

接著,於反應液中加入水40 mL、庚烷20 mL,進行分液清洗。Next, 40 mL of water and 20 mL of heptane were added to the reaction solution, and liquid separation and washing were performed.

使用無水硫酸鎂將所獲得的有機層加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以黃色油的形式獲得化合物c 1.48 g(4.14 mmol,產率57.0%)。The obtained organic layer was dried using anhydrous magnesium sulfate and filtered, and the solvent was evaporated under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 1.48 g of compound c (4.14 mmol, yield 57.0%) as a yellow oil.

關於所獲得的化合物c,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.19 (d, J HH=5.2 Hz, 1H), 7.00 (d, J HH=3.9 Hz, 1H), 6.89 (d, J HH=5.2 Hz, 1H), 6.84 (d, J HH=3.9 Hz, 1H), 2.64 (d, J HH=7.2 Hz, 2H), 1.62-1.51 (m, 1H), 1.33-1.16 (m, 8H), 0.90-0.80 (m, 6H). Regarding the obtained compound c, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.19 (d, J HH =5.2 Hz, 1H), 7.00 (d, J HH =3.9 Hz, 1H), 6.89 (d, J HH =5.2 Hz, 1H), 6.84 (d, J HH =3.9 Hz, 1H), 2.64 (d, J HH =7.2 Hz, 2H), 1.62-1.51 (m, 1H), 1.33-1.16 (m, 8H), 0.90-0.80 (m, 6H ).

<合成例26>(化合物e的合成) 使用下述式所表示的化合物c及化合物d合成下述式所表示的化合物e。 <Synthesis Example 26> (Synthesis of Compound e) Compound e represented by the following formula is synthesized using compound c represented by the following formula and compound d.

[化103] [Chemical 103]

於利用氮氣置換了內部的環境的200 mL四口燒瓶中,放入化合物c 1.46 g(4.09 mmol)、藉由國際公開第2014/112656號中記載的方法合成的化合物d 1.42 g(1.78 mmol)、四氫萘59 mL,利用氮氣進行30分鐘鼓泡,藉此進行脫氣。In a 200 mL four-necked flask in which the internal environment was replaced with nitrogen, 1.46 g (4.09 mmol) of compound c and 1.42 g (1.78 mmol) of compound d synthesized by the method described in International Publication No. 2014/112656 were placed. , 59 mL of tetralin, and degassed by bubbling nitrogen for 30 minutes.

繼而,於四口燒瓶中,放入三(二亞苄基丙酮)二鈀(0)0.0813 g(0.0888 mmol,5 mol%)、三-第三丁基鏻四氟硼酸鹽0.103 g(0.355 mmol,20 mol%),攪拌5分鐘。Then, in a four-necked flask, put 0.0813 g (dibenzylideneacetone) dipalladium (0) (0.0888 mmol, 5 mol%) and 0.103 g (0.355 mmol) tris-tert-butylphosphonium tetrafluoroborate. , 20 mol%), stir for 5 minutes.

接著,於四口燒瓶中,加入3.0 M磷酸鉀水溶液5.9 mL,將反應液於設定溫度75℃的油浴中加熱1小時並且進行攪拌。Next, 5.9 mL of 3.0 M potassium phosphate aqueous solution was added to a four-necked flask, and the reaction solution was heated in an oil bath with a set temperature of 75° C. for 1 hour while stirring.

將反應液冷卻後,於四口燒瓶中,加入水103 mL、庚烷103 mL,對有機層利用水進行三次分液清洗,利用飽和氯化鈉水溶液進行一次分液清洗。After the reaction solution was cooled, 103 mL of water and 103 mL of heptane were added to a four-necked flask. The organic layer was separated and washed three times with water and once with a saturated sodium chloride aqueous solution.

使用無水硫酸鎂將所獲得的溶液加以乾燥後進行過濾,於減壓下蒸餾除去溶媒。利用矽膠管柱對所獲得的粗生成物進行精製,藉此以紅色油的形式獲得化合物e 1.81 g(1.67 mmol,產率94.0%)。The obtained solution was dried using anhydrous magnesium sulfate and filtered, and the solvent was distilled off under reduced pressure. The obtained crude product was purified using a silica gel column to obtain 1.81 g (1.67 mmol, yield 94.0%) of compound e as a red oil.

關於所獲得的化合物e,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 7.19-7.17 (m, 2H), 7.09 (d, J HH=3.9 Hz, 1H), 7.07 (d, J HH=3.9 Hz, 1H), 7.01 (d, J HH=3.9 Hz, 2H), 6.92-6.90 (m, 2H), 6.78 (s, 1H), 6.76 (s, 1H), 2.72 (m, 4H), 1.95-1.81 (m, 4H), 1.68-1.64 (m, 2H), 1.42-1.23 (m, 56H), 0.91-0.83 (m, 18H). Regarding the obtained compound e, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 7.19-7.17 (m, 2H), 7.09 (d, J HH =3.9 Hz, 1H), 7.07 (d, J HH =3.9 Hz, 1H), 7.01 (d, J HH =3.9 Hz, 2H), 6.92-6.90 (m, 2H), 6.78 (s, 1H), 6.76 (s, 1H), 2.72 (m, 4H), 1.95-1.81 (m, 4H), 1.68-1.64 (m, 2H), 1.42-1.23 (m, 56H), 0.91-0.83 (m, 18H).

<合成例27>(化合物f的合成) 使用下述式所表示的化合物e合成下述式所表示的化合物f。 <Synthesis Example 27> (Synthesis of Compound f) Compound f represented by the following formula is synthesized using compound e represented by the following formula.

[化104] [Chemical 104]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物e 1.79 g(1.65 mmol)、二氯甲烷83 mL,於常溫下攪拌10分鐘並使化合物e溶解。In a 100 mL four-necked flask in which the internal environment was replaced with nitrogen, 1.79 g (1.65 mmol) of compound e and 83 mL of methylene chloride were placed, and the compound e was dissolved by stirring at room temperature for 10 minutes.

接著,於四口燒瓶中,放入(氯亞甲基)二甲基氯化銨0.845 g(6.60 mmol),於設定溫度49℃的油浴中加熱24小時並且進行攪拌。Next, 0.845 g (6.60 mmol) of (chloromethylene)dimethylammonium chloride was placed in a four-necked flask, and the mixture was heated in an oil bath with a set temperature of 49° C. for 24 hours while stirring.

繼而,將反應液冷卻後,加入水13 mL,利用飽和碳酸氫鈉水溶液對有機層進行兩次分液清洗。使用無水硫酸鎂將所獲得的溶液加以乾燥並進行過濾,於減壓下蒸餾除去溶媒。Then, after cooling the reaction solution, 13 mL of water was added, and the organic layer was separated and washed twice with a saturated sodium bicarbonate aqueous solution. The obtained solution was dried using anhydrous magnesium sulfate and filtered, and the solvent was distilled off under reduced pressure.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以深紅色油的形式獲得化合物f 1.72 g(1.51 mmol,產率91.4%)。The obtained crude product was purified using a silica gel column to obtain 1.72 g of compound f (1.51 mmol, yield 91.4%) as a dark red oil.

關於所獲得的化合物f,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 9.84 (s, 2H), 7.56 (s, 1H), 7.55 (s, 1H), 7.19 (d, J HH=3.9 Hz, 2H), 7.13 (d, J HH=3.9 Hz, 1H), 7.11 (d, J HH=3.9 Hz, 1H), 6.83 (s, 1H), 6.81 (s, 1H), 2.78-2.75 (m,4H), 1.96-1.82 (m, 4H), 1.70-1.68 (m, 2H), 1.40-1.23 (m, 56H), 0.90-0.84 (m,18H). Regarding the obtained compound f, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 9.84 (s, 2H), 7.56 (s, 1H), 7.55 (s, 1H), 7.19 (d, J HH =3.9 Hz, 2H), 7.13 (d, J HH =3.9 Hz, 1H), 7.11 (d, J HH =3.9 Hz, 1H), 6.83 (s, 1H), 6.81 (s, 1H), 2.78-2.75 (m,4H), 1.96-1.82 (m, 4H ), 1.70-1.68 (m, 2H), 1.40-1.23 (m, 56H), 0.90-0.84 (m,18H).

<合成例28>(化合物N-7的合成) 使用下述式所表示的化合物f及化合物g合成下述式所表示的化合物N-7。 <Synthesis Example 28> (Synthesis of Compound N-7) Compound N-7 represented by the following formula was synthesized using compound f and compound g represented by the following formula.

[化105] [Chemical 105]

於利用氮氣置換了內部的環境的100 mL四口燒瓶中,放入化合物f 0.798 g(0.700 mmol)、化合物g 0.442 g(1.68 mmol)、氯仿35 mL、吡啶0.554 g(7.00 mmol),於68℃的油浴中加熱1.5小時並且進行攪拌。In a 100 mL four-necked flask whose internal environment has been replaced with nitrogen, 0.798 g (0.700 mmol) of compound f, 0.442 g (1.68 mmol) of compound g, 35 mL of chloroform, and 0.554 g of pyridine (7.00 mmol) are placed, and the mixture is placed at 68 Heat in an oil bath at 1.5°C for 1.5 hours with stirring.

將所獲得的溶液冷卻至常溫,加入至甲醇210 mL中。將所獲得的溶液過濾,以析出物的形式獲得粗生成物。The obtained solution was cooled to normal temperature and added to 210 mL of methanol. The obtained solution was filtered to obtain a crude product as a precipitate.

利用矽膠管柱對所獲得的粗生成物進行精製,藉此以黑色固體的形式獲得化合物N-7 0.981 g(0.602 mmol,產率86.0%)。The obtained crude product was purified using a silica gel column to obtain 0.981 g (0.602 mmol, yield 86.0%) of compound N-7 as a black solid.

關於所獲得的化合物N-7,對NMR光譜進行解析。結果如下述般。 [ 1H NMR(CDCl 3)] δ 8.69 (s, 1H),8.68 (s, 1H),8.67 (s, 2H), 7.89 (s, 1H), 7.88 (s, 1H), 7.54 (s, 1H), 7.53 (s, 1H),7.38 (d, J HH=4.1 Hz, 1H),7.36 (d, J HH=4.0 Hz, 1H),7.08 (d, J HH=4.3 Hz, 1H),7.05 (d, J HH=4.0 Hz, 1H),6.85 (s, 1H),6.80 (s, 1H), 2.76-2.72(m,4H), 1.96-1.92 (m, 4H), 1.74 (br, 2H), 1.41-1.23 (m, 56H), 0.95-0.83 (m, 18H). Regarding the obtained compound N-7, the NMR spectrum was analyzed. The results are as follows. [ 1 H NMR (CDCl 3 )] δ 8.69 (s, 1H), 8.68 (s, 1H), 8.67 (s, 2H), 7.89 (s, 1H), 7.88 (s, 1H), 7.54 (s, 1H ), 7.53 (s, 1H), 7.38 (d, J HH =4.1 Hz, 1H), 7.36 (d, J HH =4.0 Hz, 1H), 7.08 (d, J HH =4.3 Hz, 1H), 7.05 ( d, J HH =4.0 Hz, 1H),6.85 (s, 1H),6.80 (s, 1H), 2.76-2.72(m,4H), 1.96-1.92 (m, 4H), 1.74 (br, 2H), 1.41-1.23 (m, 56H), 0.95-0.83 (m, 18H).

<製備例1>(油墨I-1的製備) 使用四氫萘作為第一溶媒,使用苯甲酸丁酯作為第二溶媒,將第一溶媒與第二溶媒的體積比設為97:3,製備混合溶媒。於所製備的混合溶媒中,將作為p型半導體材料的高分子化合物P-1以相對於油墨的總質量而為1.2質量%的濃度的方式、且將作為n型半導體材料的化合物N-1以相對於油墨的總質量而為1.2質量%的濃度的方式(p型半導體材料/n型半導體材料=1/1)混合,於60℃下進行8小時攪拌而獲得混合液,將所獲得的混合液使用過濾器進行過濾,而獲得油墨(I-1)。 <Preparation Example 1> (Preparation of Ink I-1) Tetralin was used as the first solvent, butyl benzoate was used as the second solvent, and the volume ratio of the first solvent and the second solvent was set to 97:3 to prepare a mixed solvent. In the prepared mixed solvent, the polymer compound P-1 as a p-type semiconductor material was contained at a concentration of 1.2 mass % with respect to the total mass of the ink, and the compound N-1 as an n-type semiconductor material was The mixture was mixed at a concentration of 1.2% by mass (p-type semiconductor material/n-type semiconductor material = 1/1) based on the total mass of the ink, and stirred at 60° C. for 8 hours to obtain a mixed liquid. The mixed liquid was filtered using a filter, and ink (I-1) was obtained.

<製備例2~製備例17>(油墨I-2~油墨I-17的製備) 除了以下述表9所示的組合使用溶媒與n型半導體材料以外,與製備例1同樣地獲得油墨(I-2)~油墨(I-17)。 <Preparation Example 2 to Preparation Example 17> (Preparation of Ink I-2 to Ink I-17) Ink (I-2) to ink (I-17) were obtained in the same manner as in Preparation Example 1, except that the solvent and the n-type semiconductor material were used in the combination shown in Table 9 below.

[表9] (表9)    油墨 n型半導體材料 第一溶媒(S1) 第二溶媒(S2) |P(B 1)-P(S2)| (單位:MPa 0.5 製備例1 I-1 N-1 四氫萘 苯甲酸丁酯 3.9 製備例2 I-2 N-1 假枯烯 1,2-二甲氧基苯 1.2 製備例3 I-3 N-2 鄰二甲苯 苯甲酸甲酯 6.8 製備例4 I-4 N-2 假枯烯 1,2-二甲氧基苯 3.2 製備例5 I-5 N-2 鄰二氯苯 - - 製備例6 I-6 N-3 鄰二甲苯 苯乙酮 7.4 製備例7 I-7 N-3 四氫萘 苯甲酸丁酯 4.0 製備例8 I-8 N-3 四氫萘 - - 製備例9 I-9 N-4 鄰二甲苯 苯甲酸甲酯 6.0 製備例10 I-10 N-4 四氫萘 - - 製備例11 I-11 N-5 假枯烯 1,2-二甲氧基苯 3.3 製備例12 I-12 N-5 鄰二甲苯 苯甲酸甲酯 7.1 製備例13 I-13 N-5 鄰二甲苯 - - 製備例14 I-14 N-6 四氫萘 苯甲酸丁酯 3.0 製備例15 I-15 N-6 鄰二氯苯 - - 製備例16 I-16 N-7 鄰二甲苯 苯甲酸甲酯 7.3 製備例17 I-17 N-7 四氫萘 - - [Table 9] (Table 9) ink n-type semiconductor material First solvent (S1) Second solvent (S2) |P( B1 )-P(S2)| (Unit: MPa 0.5 ) Preparation Example 1 I-1 N-1 Tetralin Butyl benzoate 3.9 Preparation Example 2 I-2 N-1 pseudocumene 1,2-Dimethoxybenzene 1.2 Preparation Example 3 I-3 N-2 o-xylene Methyl benzoate 6.8 Preparation Example 4 I-4 N-2 pseudocumene 1,2-Dimethoxybenzene 3.2 Preparation Example 5 I-5 N-2 o-dichlorobenzene - - Preparation Example 6 I-6 N-3 o-xylene Acetophenone 7.4 Preparation Example 7 I-7 N-3 Tetralin Butyl benzoate 4.0 Preparation Example 8 I-8 N-3 Tetralin - - Preparation Example 9 I-9 N-4 o-xylene Methyl benzoate 6.0 Preparation Example 10 I-10 N-4 Tetralin - - Preparation Example 11 I-11 N-5 pseudocumene 1,2-Dimethoxybenzene 3.3 Preparation Example 12 I-12 N-5 o-xylene Methyl benzoate 7.1 Preparation Example 13 I-13 N-5 o-xylene - - Preparation Example 14 I-14 N-6 Tetralin Butyl benzoate 3.0 Preparation Example 15 I-15 N-6 o-Dichlorobenzene - - Preparation Example 16 I-16 N-7 o-xylene Methyl benzoate 7.3 Preparation Example 17 I-17 N-7 Tetralin - -

<實施例1>(光電轉換元件的製造及評價) (1)光電轉換元件及其密封體的製造 準備藉由濺鍍法以50 nm的厚度形成有ITO的薄膜(陽極)的玻璃基板,對所述玻璃基板進行作為表面處理的臭氧UV處理。 <Example 1> (Production and evaluation of photoelectric conversion element) (1) Manufacturing of photoelectric conversion components and their sealed bodies A glass substrate on which a thin film (anode) of ITO was formed to a thickness of 50 nm by a sputtering method was prepared, and ozone UV treatment was performed on the glass substrate as a surface treatment.

接著,藉由旋塗法將油墨(I-1)塗佈於ITO的薄膜上來形成塗膜後,於氮氣環境下使用加熱至100℃的加熱板進行10分鐘加熱處理以使其乾燥,形成活性層。所形成的活性層的厚度約為300 nm。Next, the ink (I-1) is applied on the thin film of ITO by spin coating to form a coating film, and then it is heated for 10 minutes using a hot plate heated to 100°C in a nitrogen atmosphere to dry it and form an active layer. layer. The thickness of the active layer formed is approximately 300 nm.

接著,藉由旋塗法將ZnO(帝化(Tayca)公司製造,製品名:HTD-711Z)塗佈於所形成的活性層上來形成約50 nm的厚度的電子傳輸層。Next, ZnO (manufactured by Tayca, product name: HTD-711Z) was coated on the formed active layer by a spin coating method to form an electron transport layer with a thickness of approximately 50 nm.

繼而,於所形成的電子傳輸層上以約60 nm的厚度形成銀(Ag)層,作為陰極。 藉由以上步驟,於玻璃基板上製造光電轉換元件。 Then, a silver (Ag) layer was formed with a thickness of about 60 nm on the formed electron transport layer as a cathode. Through the above steps, a photoelectric conversion element is manufactured on the glass substrate.

接著,以包圍所製造的光電轉換元件的周邊的方式,於作為支持基板的玻璃基板上塗佈作為密封材的UV硬化性密封劑,貼合作為密封基板的玻璃基板後,照射UV光,將光電轉換元件密封於支持基板與密封基板的間隙,藉此獲得光電轉換元件的密封體。密封於支持基板與密封基板的間隙的光電轉換元件自其厚度方向觀察時的平面形狀為2 mm×2 mm的正方形。將所獲得的密封體作為樣品1。Next, a UV curable sealant as a sealing material is applied to the glass substrate as the supporting substrate so as to surround the periphery of the produced photoelectric conversion element, and the glass substrate as the sealing substrate is bonded, and then UV light is irradiated. The photoelectric conversion element is sealed in the gap between the supporting substrate and the sealing substrate, thereby obtaining a sealed body of the photoelectric conversion element. The planar shape of the photoelectric conversion element sealed in the gap between the support substrate and the sealing substrate is a square of 2 mm × 2 mm when viewed in the thickness direction. The obtained sealed body was designated as Sample 1.

(2)光電轉換元件的評價(外部量子效率的評價) 對所製造的樣品1施加-5 V的反向偏置電壓,使用分光感度測定裝置(CEP-2000,分光計器公司製造)對所述施加電壓下的波長940 nm的外部量子效率(EQE)進行測定並評價。 (2) Evaluation of photoelectric conversion elements (evaluation of external quantum efficiency) A reverse bias voltage of -5 V was applied to the manufactured sample 1, and the external quantum efficiency (EQE) at a wavelength of 940 nm under the applied voltage was measured using a spectrophotometric sensitivity measuring device (CEP-2000, manufactured by Spectrometer Co., Ltd.). Measure and evaluate.

<比較例1> 除了使用油墨(I-2)以外,與實施例1同樣地製造光電轉換元件並進行評價。 <Comparative example 1> A photoelectric conversion element was produced and evaluated in the same manner as in Example 1 except that ink (I-2) was used.

<評價1> 求出實施例1的光電轉換元件的EQE相對於比較例1的光電轉換元件的EQE的值的相對百分率(EQE相對值,單位:%)為122%。即,實施例1的光電轉換元件的EQE高於比較例1的光電轉換元件的EQE。將結果亦示於下述表10中。 <Evaluation 1> The relative percentage (EQE relative value, unit: %) of the EQE of the photoelectric conversion element of Example 1 to the EQE of the photoelectric conversion element of Comparative Example 1 was found to be 122%. That is, the EQE of the photoelectric conversion element of Example 1 is higher than the EQE of the photoelectric conversion element of Comparative Example 1. The results are also shown in Table 10 below.

<實施例2、比較例2、基準例1> 除了分別使用油墨(I-3)、油墨(I-4)、油墨(I-5)以外,與實施例1同樣地進行光電轉換元件的製造及評價。 <Example 2, Comparative Example 2, Reference Example 1> The photoelectric conversion element was produced and evaluated in the same manner as in Example 1, except that ink (I-3), ink (I-4), and ink (I-5) were used respectively.

<評價2> 相對於基準例1的光電轉換元件的EQE值,實施例1中獲得的光電轉換元件的EQE相對值為118%,比較例1的光電轉換元件的EQE相對值為94%。已知儘管用作n型半導體材料的化合物均為化合物N-2,但於實施例2中可獲得優異的EQE特性。將結果亦示於下述表10中。 <Evaluation 2> Compared with the EQE value of the photoelectric conversion element of Reference Example 1, the relative EQE value of the photoelectric conversion element obtained in Example 1 was 118%, and the relative EQE value of the photoelectric conversion element of Comparative Example 1 was 94%. It is known that excellent EQE characteristics can be obtained in Example 2 although the compounds used as n-type semiconductor materials are all compounds N-2. The results are also shown in Table 10 below.

<實施例3~實施例8、比較例3、基準例2~基準例6> 使用利用油墨(I-6)~油墨(I-17)製造的光電轉換元件,與所述同樣地進行對相對於基準例的實施例及比較例的比較。將結果亦示於下述表10中。 <Example 3 to Example 8, Comparative Example 3, and Reference Example 2 to Reference Example 6> Using the photoelectric conversion elements produced using ink (I-6) to ink (I-17), comparisons were made between Examples and Comparative Examples with respect to the Reference Example in the same manner as described above. The results are also shown in Table 10 below.

[表10] (表10)    油墨 EQE相對值(%) 實施例1 I-1 122 比較例1 I-2 100 實施例2 I-3 118 比較例2 I-4 94 基準例1 I-5 100 實施例3 I-6 133 實施例4 I-7 137 基準例2 I-8 100 實施例5 I-9 170 基準例3 I-10 100 實施例6 I-11 230 實施例7 I-12 160 基準例4 I-13 100 比較例3 I-14 91 基準例5 I-15 100 實施例8 I-16 138 基準例6 I-17 100 [Table 10] (Table 10) ink EQE relative value (%) Example 1 I-1 122 Comparative example 1 I-2 100 Example 2 I-3 118 Comparative example 2 I-4 94 Base case 1 I-5 100 Example 3 I-6 133 Example 4 I-7 137 Base case 2 I-8 100 Example 5 I-9 170 Base case 3 I-10 100 Example 6 I-11 230 Example 7 I-12 160 Base case 4 I-13 100 Comparative example 3 I-14 91 Base example 5 I-15 100 Example 8 I-16 138 Base example 6 I-17 100

如所述表10所示般,根據使用滿足本發明的要件的油墨組成物作為活性層形成用的油墨組成物而製造的光電轉換元件,與使用不滿足本發明的要件的油墨組成物而製造的光電轉換元件相比,可提高EQE。As shown in Table 10, the photoelectric conversion element was produced by using an ink composition that satisfied the requirements of the present invention as the ink composition for forming the active layer, and the photoelectric conversion element was produced by using an ink composition that did not meet the requirements of the present invention. Compared with photoelectric conversion elements, EQE can be improved.

10:光電轉換元件 11、210:支持基板 12:陽極 13:電洞傳輸層 14:活性層 15:電子傳輸層 16:陰極 17:密封構件 10: Photoelectric conversion element 11, 210: Support substrate 12:Anode 13: Hole transport layer 14:Active layer 15:Electron transport layer 16:Cathode 17:Sealing components

圖1是示意性地表示光電轉換元件的構成例的圖。FIG. 1 is a diagram schematically showing a structural example of a photoelectric conversion element.

10:光電轉換元件 10: Photoelectric conversion element

11:支持基板 11:Support substrate

12:陽極 12:Anode

13:電洞傳輸層 13: Hole transport layer

14:活性層 14:Active layer

15:電子傳輸層 15:Electron transport layer

16:陰極 16:Cathode

17:密封構件 17:Sealing components

Claims (12)

一種油墨組成物,包含: 半導體材料,包括至少一種p型半導體材料及至少一種n型半導體材料;以及 兩種以上的溶媒,包括第一溶媒及具有較所述第一溶媒的沸點而言高的沸點的第二溶媒, 所述p型半導體材料及所述n型半導體材料中的任一者為下述式(I)所表示的非富勒烯化合物, 包含B 1的化合物的漢森溶解度參數的極性項P(B 1)(MPa 0.5)與所述第二溶媒的漢森溶解度參數的極性項P(S2)(MPa 0.5)滿足下述式(III)所表示的條件,所述B 1是將下述式(I)所表示的非富勒烯化合物中的A 1與B 1的鍵切斷而形成的末端利用氫原子封端; A 1-B 1-(A 1)n   (I) |P(B 1)-P(S2)|>3.2(MPa 0.5)   (III) 式(I)中, A 1表示吸電子性的基, B 1表示包含一個以上的構成單元、並構成π共軛系的基, n為0或1,於n為1的情況下,存在兩個的A 1可相同亦可不同, 包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物與包含B 1的化合物滿足下述式(II)所表示的條件; E HOMO(B 1)-E HOMO(A 1)>2.0(eV)   (II) 式(II)中, E HOMO(B 1)(eV)表示包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的B 1的化合物的最高佔據軌域的能階的值, E HOMO(A 1)(eV)表示包含將A 1與B 1的鍵切斷而形成的末端利用氫原子封端的A 1的化合物的最高佔據軌域的能階的值。 An ink composition comprising: a semiconductor material, including at least one p-type semiconductor material and at least one n-type semiconductor material; and two or more solvents, including a first solvent and a solvent having a boiling point higher than that of the first solvent. The second solvent with a boiling point, any one of the p-type semiconductor material and the n-type semiconductor material is a non-fullerene compound represented by the following formula (I), Hansen solubility parameter of the compound containing B 1 The polar term P (B 1 ) (MPa 0.5 ) and the polar term P (S2) (MPa 0.5 ) of the Hansen solubility parameter of the second solvent satisfy the conditions represented by the following formula (III), and the B 1 The terminal formed by cutting the bond between A 1 and B 1 in the non-fullerene compound represented by the following formula (I) is terminated with a hydrogen atom; A 1 -B 1 -(A 1 )n (I ) |P(B 1 )-P(S2)|>3.2(MPa 0.5 ) (III) In formula (I), A 1 represents an electron-withdrawing group, and B 1 represents one or more structural units and constitutes π A conjugated group, n is 0 or 1. When n is 1, the two A 1's may be the same or different, including terminal hydrogen atoms formed by cutting the bond between A 1 and B 1 The compound of blocked A 1 and the compound containing B 1 satisfy the conditions represented by the following formula (II); E HOMO (B 1 )-E HOMO (A 1 )>2.0 (eV) (II) In formula (II) , E HOMO (B 1 ) (eV) represents the value of the energy level of the highest occupied orbital of a compound containing B 1 whose terminal is terminated with a hydrogen atom, which is formed by cutting the bond between A 1 and B 1 , E HOMO (A 1 ) (eV) represents the value of the energy level of the highest occupied orbital of a compound containing A 1 whose terminal is terminated with a hydrogen atom, which is formed by cutting the bond between A 1 and B 1 . 如請求項1所述的油墨組成物,其中,所述第二溶媒是具有較所述第一溶媒的沸點而言高30℃以上的沸點的溶媒。The ink composition according to claim 1, wherein the second solvent is a solvent having a boiling point that is 30° C. or more higher than the boiling point of the first solvent. 如請求項1或2所述的油墨組成物,其中,所述第二溶媒為醚溶媒、芳香族烴溶媒、酮溶媒或酯溶媒。The ink composition according to claim 1 or 2, wherein the second solvent is an ether solvent, an aromatic hydrocarbon solvent, a ketone solvent or an ester solvent. 如請求項1至3中任一項所述的油墨組成物,其中,所述式(I)所表示的非富勒烯化合物為n型半導體材料。The ink composition according to any one of claims 1 to 3, wherein the non-fullerene compound represented by the formula (I) is an n-type semiconductor material. 如請求項1至4中任一項所述的油墨組成物,其中,所述式(I)中,作為B 1中所含的所述一個以上的構成單元中的至少一個的第一構成單元為下述式(IV)所表示的構成單元,且所述第一構成單元以外的剩餘的第二構成單元為包含不飽和鍵的二價基、二價芳香族碳環基或二價芳香族雜環基,於所述第一構成單元存在兩個以上的情況下,存在兩個以上的第一構成單元可相同亦可不同,於所述第二構成單元存在兩個以上的情況下,存在兩個以上的第二構成單元可相同亦可不同; 式(IV)中, Ar 1及Ar 2分別獨立地表示可具有取代基的芳香族碳環或可具有取代基的芳香族雜環, Y表示直接鍵結、-C(=O)-所表示的基或氧原子, R分別獨立地表示: 氫原子、 鹵素原子、 可具有取代基的烷基、 可具有取代基的環烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的環烷基氧基、 可具有取代基的芳基氧基、 可具有取代基的烷硫基、 可具有取代基的環烷硫基、 可具有取代基的芳硫基、 可具有取代基的一價雜環基、 可具有取代基的取代胺基、 可具有取代基的醯基、 可具有取代基的亞胺殘基、 可具有取代基的醯胺基、 可具有取代基的醯亞胺基、 可具有取代基的取代氧基羰基、 可具有取代基的烯基、 可具有取代基的環烯基、 可具有取代基的炔基、 可具有取代基的環炔基、 氰基、 硝基、 -C(=O)-R a所表示的基、或 -SO 2-R b所表示的基, R a及R b分別獨立地表示: 氫原子、 可具有取代基的烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的芳基氧基、或 可具有取代基的一價雜環基; 存在多個的R彼此可相同亦可不同。 The ink composition according to any one of claims 1 to 4, wherein in the formula (I), the first structural unit is at least one of the one or more structural units contained in B 1 It is a structural unit represented by the following formula (IV), and the remaining second structural unit other than the first structural unit is a divalent group containing an unsaturated bond, a divalent aromatic carbocyclic group or a divalent aromatic group. Heterocyclyl group, when there are two or more first structural units, the two or more first structural units may be the same or different, and when there are two or more second structural units, there Two or more second structural units may be the same or different; In the formula (IV), Ar 1 and Ar 2 each independently represent an aromatic carbocyclic ring that may have a substituent or an aromatic heterocyclic ring that may have a substituent, Y represents a direct bond, and -C(=O)- represents of a group or an oxygen atom, R independently represents: a hydrogen atom, a halogen atom, an alkyl group that may have a substituent, a cycloalkyl group that may have a substituent, an aryl group that may have a substituent, an alkyl group that may have a substituent Oxy group, optionally substituted cycloalkyloxy group, optionally substituted aryloxy group, optionally substituted alkylthio group, optionally substituted cycloalkylthio group, optionally substituted arylthio group group, a monovalent heterocyclic group that may have a substituent, a substituted amine group that may have a substituent, a acyl group that may have a substituent, an imine residue that may have a substituent, a amide group that may have a substituent, amide group having a substituent, a substituted oxycarbonyl group that may have a substituent, an alkenyl group that may have a substituent, a cycloalkenyl group that may have a substituent, an alkynyl group that may have a substituent, a ring that may have a substituent Alkynyl group, cyano group, nitro group, a group represented by -C(=O)-R a , or a group represented by -SO 2 -R b , R a and R b each independently represent: a hydrogen atom, which may have An alkyl group that may have a substituent, an aryl group that may have a substituent, an alkyloxy group that may have a substituent, an aryloxy group that may have a substituent, or a monovalent heterocyclic group that may have a substituent; there are multiple R may be the same as or different from each other. 如請求項5所述的油墨組成物,其中所述第一構成單元為下述式(V)所表示的構成單元; 式(V)中, Y及R如所述定義般, X 1及X 2分別獨立地表示硫原子或氧原子, Z 1及Z 2分別獨立地表示=C(R)-所表示的基或氮原子。 The ink composition according to claim 5, wherein the first structural unit is a structural unit represented by the following formula (V); In the formula (V), Y and R are as defined above, X 1 and X 2 each independently represent a sulfur atom or an oxygen atom, and Z 1 and Z 2 each independently represent a group represented by =C(R)- or Nitrogen atom. 如請求項6所述的油墨組成物,其中所述第一構成單元為下述式(V-1)所表示的構成單元; 式(V-1)中, Y表示-C(=O)-所表示的基或氧原子, R分別獨立地表示: 氫原子、 鹵素原子、 可具有取代基的烷基、 可具有取代基的環烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的環烷基氧基、 可具有取代基的芳基氧基、 可具有取代基的烷硫基、 可具有取代基的環烷硫基、 可具有取代基的芳硫基、 可具有取代基的一價雜環基、 可具有取代基的取代胺基、 可具有取代基的醯基、 可具有取代基的亞胺殘基、 可具有取代基的醯胺基、 可具有取代基的醯亞胺基、 可具有取代基的取代氧基羰基、 可具有取代基的烯基、 可具有取代基的環烯基、 可具有取代基的炔基、 可具有取代基的環炔基、 氰基、 硝基、 -C(=O)-R a所表示的基、或 -SO 2-R b所表示的基, R a及R b分別獨立地表示: 氫原子、 可具有取代基的烷基、 可具有取代基的芳基、 可具有取代基的烷基氧基、 可具有取代基的芳基氧基、或 可具有取代基的一價雜環基; 存在多個的R可相同亦可不同。 The ink composition according to claim 6, wherein the first structural unit is a structural unit represented by the following formula (V-1); In formula (V-1), Y represents a group represented by -C(=O)- or an oxygen atom, and R each independently represents: a hydrogen atom, a halogen atom, an alkyl group that may have a substituent, an alkyl group that may have a substituent Cycloalkyl group, aryl group which may have a substituent, alkyloxy group which may have a substituent, cycloalkyloxy group which may have a substituent, aryloxy group which may have a substituent, alkylthio which may have a substituent group, a cycloalkylthio group which may have a substituent, an arylthio group which may have a substituent, a monovalent heterocyclic group which may have a substituent, a substituted amino group which may have a substituent, a hydroxyl group which may have a substituent, Imine residue having a substituent, amide group which may have a substituent, amide group which may have a substituent, substituted oxycarbonyl group which may have a substituent, alkenyl group which may have a substituent, alkenyl group which may have a substituent a cycloalkenyl group, an alkynyl group that may have a substituent, a cycloalkynyl group that may have a substituent, a cyano group, a nitro group, a group represented by -C(=O)-R a , or a group represented by -SO 2 -R b The groups represented, R a and R b each independently represent: a hydrogen atom, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkyloxy group which may have a substituent, an aryl group which may have a substituent An oxygen group, or a monovalent heterocyclic group which may have a substituent; the plural R present may be the same or different. 如請求項6或7所述的油墨組成物,其中B 1為具有選自由下述式(VII-1)~式(VII-16)所表示的結構所組成的群組中的任一個結構的二價基; -CU1-          (VII-1) -CU1-CU1-        (VII-2) -CU1-CU2-        (VII-3) -CU1-CU1-CU1-      (VII-4) -CU1-CU2-CU1-      (VII-5) -CU1-CU1-CU2-      (VII-6) -CU1-CU2-CU2-      (VII-7) -CU2-CU1-CU2-      (VII-8) -CU1-CU1-CU1-CU1-    (VII-9) -CU1-CU1-CU1-CU2-    (VII-10) -CU1-CU1-CU2-CU1-    (VII-11) -CU1-CU1-CU2-CU2-    (VII-12) -CU1-CU2-CU1-CU2-    (VII-13) -CU1-CU2-CU2-CU1-    (VII-14) -CU1-CU2-CU2-CU2-    (VII-15) -CU2-CU1-CU2-CU2-    (VII-16) 式(VII-1)~式(VII-16)中, CU1表示所述第一構成單元, CU2表示所述第二構成單元; 於CU1存在兩個以上的情況下,存在兩個以上的CU1可相同亦可不同,於CU2存在兩個以上的情況下,存在兩個以上的CU2可相同亦可不同。 The ink composition according to claim 6 or 7, wherein B 1 has any one structure selected from the group consisting of the structures represented by the following formula (VII-1) to formula (VII-16) Bivalent base; -CU1- (VII-1) -CU1-CU1- (VII-2) -CU1-CU2- (VII-3) -CU1-CU1-CU1- (VII-4) -CU1-CU2-CU1 - (VII-5) -CU1-CU1-CU2- (VII-6) -CU1-CU2-CU2- (VII-7) -CU2-CU1-CU2- (VII-8) -CU1-CU1-CU1-CU1 - (VII-9) -CU1-CU1-CU1-CU2- (VII-10) -CU1-CU1-CU2-CU1- (VII-11) -CU1-CU1-CU2-CU2- (VII-12) -CU1 -CU2-CU1-CU2- (VII-13) -CU1-CU2-CU2-CU1- (VII-14) -CU1-CU2-CU2-CU2- (VII-15) -CU2-CU1-CU2-CU2- ( VII-16) In formulas (VII-1) to (VII-16), CU1 represents the first structural unit, and CU2 represents the second structural unit; when there are two or more CU1s, there are two The above CU1 may be the same or different. When there are two or more CU2s, the two or more CU2s may be the same or different. 如請求項1至8中任一項所述的油墨組成物,其中,所述p型半導體材料為共軛高分子化合物。The ink composition according to any one of claims 1 to 8, wherein the p-type semiconductor material is a conjugated polymer compound. 一種固化膜,是使如請求項1至9中任一項所述的油墨組成物固化而成。A cured film obtained by curing the ink composition according to any one of claims 1 to 9. 一種光電轉換元件,包括第一電極、第二電極、以及設置於所述第一電極與第二電極之間的活性層,所述活性層是如請求項10所述的固化膜。A photoelectric conversion element includes a first electrode, a second electrode, and an active layer disposed between the first electrode and the second electrode. The active layer is the cured film according to claim 10. 如請求項11所述的光電轉換元件,為光檢測元件。The photoelectric conversion element according to claim 11 is a photodetection element.
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