TW200935384A - Display apparatus, driving method for display apparatus and electronic apparatus - Google Patents
Display apparatus, driving method for display apparatus and electronic apparatusInfo
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- TW200935384A TW200935384A TW97141028A TW97141028A TW200935384A TW 200935384 A TW200935384 A TW 200935384A TW 97141028 A TW97141028 A TW 97141028A TW 97141028 A TW97141028 A TW 97141028A TW 200935384 A TW200935384 A TW 200935384A
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Abstract
Description
200935384 九、發明說明: 【發明所屬之技術領域】200935384 IX. Description of the invention: [Technical field to which the invention belongs]
M 4¾¾ g§ 0 【先前技術】 近年來頻繁地開發作為發朵开杜庙士M 43⁄43⁄4 g§ 0 [Prior Art] Frequently developed in recent years as a hair-opening Du Temple
電壓10 V以下驅動’因此消耗電力低。 刀低。而且’由於有機EL 因此不需要照明構件,容 ,由於有機EL器件之反應 因此不會發生動晝顯示時 器件為自己發光之自發光元件,g 易輕量化及薄型化。進一步而言, 速度為數μβ程度’非常地高速,g 之殘影。 將有機EL器件使用於像素之平面自發光型之顯示裝置 中,特別頻繁地開發作為驅動元件,而於各像素積體形成 有溥膜電晶體之主動矩陣型之顯示裝置。主動矩陣型平面 自發光顯示裝置係記載於例如以下之專利文獻丨至5。 [專利文獻1]日本特開2003-255856 [專利文獻2]曰本特開2〇〇3_271〇95 [專利文獻3]日本特開2〇〇4_13324〇 [專利文獻4]曰本特開2〇〇4_〇29791 [專利文獻5]日本特開2〇〇4_〇93682 圖23係表示以往之主動矩陣型顯示裝置之一例之模式電 133422.doc 200935384 路圖。帛示裝置係以像素陣列部i及周邊之驅動部所構 f。驅動部包含··水平選擇器3及寫入掃描器4。像素陣列 包3 .行狀之信號線SL及列狀之掃描線ws。於各信號 線礼與掃描線WS交叉之部分配置有像素2。於圖中為了°容 易理解’僅表示!個像素寫入掃描器4包含偏移暫存 器,因應從外部供給之時鐘信號邮行動作,依次傳輸同 樣從外部供給之開始脈“,藉此對掃描線呢依次輸出 ❿ Ο 控制信號。水平選擇器3係配合寫人掃描_之線依次掃 描’將影像信號供給至信號線SL。 卢像素2係以取樣用電晶體n、驅動用電晶體丁2、保持電 容C1及發光元件EL所構成。驅動用電晶體了2為卩通道型, 作為其一電流端之源極連接於電源線,作為另一電流端之 沒極連接於發光元件EL。作為驅動用電晶體Τ2之控制端 之問極係經由取樣用電晶體T1而連接於信號組。取樣用 電晶體η係因應從寫入掃描器4供給之控制信號來導通, 取樣從信號線SL所供給之影像信號,並寫人於保持電容 C卜驅動用電晶體丁2係將寫入於保持電容。之影像,號 作為閘極電壓Vgs,於該閘極接受,將沒極電流他流至^ 光兀件EL。藉此’發光元件⑽以因應影像信號之亮^ 發光。閘極電壓Vgs係表示以源極為基準之閘極之電仅又 驅動用電晶體T2係於飽和區域進行動作,間極電壓; 與汲極電流Ids之關係係由以下特性式(1)表示。The voltage is driven below 10 V, so the power consumption is low. The knife is low. Further, since the organic EL does not require an illumination member, since the organic EL device reacts, the device does not emit a self-luminous element that emits light when it is displayed, and the color is easy to be lighter and thinner. Further, the speed is a few μβ degree 'very high speed, g residual image. An organic EL device is used in a planar self-luminous type display device of a pixel, and an active matrix type display device in which a germanium transistor is formed as a driving element and a germanium film is formed in each pixel is developed. The active matrix type planar self-luminous display device is described, for example, in the following Patent Documents 丨 to 5. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-255856 [Patent Document 2] 曰本开开 2〇〇3_271〇95 [Patent Document 3] Japanese Patent Laid-Open No. 4〇〇13_13324〇 [Patent Document 4] 〇4_〇29791 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2 〇〇 〇 82 82 82 82 82 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 。 。 。 。 。 The display device is constructed by the pixel array portion i and the peripheral driving portion. The drive unit includes a horizontal selector 3 and a write scanner 4. Pixel array package 3. Line-shaped signal line SL and column-shaped scanning line ws. A pixel 2 is disposed in a portion where each signal line intersects the scanning line WS. In the figure, it is easy to understand for 'only'! The pixel write scanner 4 includes an offset register, and in response to the clock signal from the external supply, the pulse is also sequentially transmitted from the outside. The scan line sequentially outputs the ❿ Ο control signal. The horizontal selector 3 sequentially scans the line of the write scan _ to supply the image signal to the signal line SL. The pixel 2 is used for sampling the transistor n and the drive transistor 2. The capacitor C1 and the light-emitting element EL are formed. The driving transistor 2 is a channel type, and the source of one of the current terminals is connected to the power source line, and the other terminal of the other current terminal is connected to the light-emitting element EL. The gate of the control terminal of the driving transistor Τ2 is connected to the signal group via the sampling transistor T1. The sampling transistor η is turned on in response to a control signal supplied from the writing scanner 4, and is sampled from the signal line SL. The supplied image signal is written to the holding capacitor C. The driving transistor is written in the holding capacitor. The image, the number as the gate voltage Vgs, is accepted at the gate and will have no current. To the light-emitting element EL, the 'light-emitting element (10) emits light in response to the light of the image signal. The gate voltage Vgs indicates that the gate of the source is the reference electrode only the driving transistor T2 is operated in the saturation region. , the interpole voltage; the relationship with the drain current Ids is expressed by the following characteristic formula (1).
Ids=(l/2)p(W/L)Cox(Vgs-Vth)..·⑴ 於此’H為驅動用電晶體之遷移率,w為驅動用電晶體之 133422.doc 200935384 通道寬,L同樣為通道長,Cgx同樣為每單位面積之間極絕 緣膜電容’ Vth同樣為臨限電壓。如同從該特性式可聞 明,驅動用電晶體T2係於在飽和區域進行動作時,作為因 應問極電壓Vgs來供給沒極電流Ids之定電流源而發揮功 能。 圖24係、表示發光元件EL之電壓/電流特性之曲線圖。於 橫軸表示陽極電壓V,於縱抽取定驅動電流此。此外,發 ❹ 光元件EL之陽極電壓為驅動用電晶體T2之沒極電壓。發 光元件EL之電流/電壓特性係經時變化,特性曲線隨著時 間經過而傾向平緩。因此,即使驅動電流⑷為一定,陽 極電壓(汲極電壓)v仍會變化,就該點而言,圖23所示之 像素電路2係驅動用電晶體丁2在飽和區域進行動作,可無 關於汲極電壓之變動而於閘極流有因應電壓Vgs之驅動電 流此,因此可無關於發光元件虹之特性經時變化而將發 光亮度保持於一定。 〇 圖25係表示以往之像素電路之其他例之電路圖。與先前 斤示之圖23之像素電路之不同點為,驅動用電晶體η從p 通道型變為N通道型。電路之製造過程上,甚多情況係將 構成像素之所有電晶體製成N通道型較有利。 【發明内容】 [發明所欲解決之問題] 顯示面板之高精細化及大型化進展,掃描線之條數超過 1_條。將許多條掃描線予以線依次婦描之寫入掃描器亦 λ型化。近年來,伴隨著顯示面板及驅動部之大型化而開 133422.doc 200935384 發所謂區塊驅動《該情況下,顯示裝置之驅動部係進行以 每特定條數區分掃描線予以區塊化,以區塊單位依次驅動 行列狀之像素之區塊依次驅動,及於各區塊内掃描各掃描 線’以列單位依次驅動像素之線依次驅動,以於面板顯示 圖像。 ❹Ids=(l/2)p(W/L)Cox(Vgs-Vth)..(1) Here, 'H is the mobility of the driving transistor, and w is the 133422.doc 200935384 channel width of the driving transistor. L is also the channel length, and Cgx is also the capacitance film of the extremely insulating film per unit area 'Vth is also the threshold voltage. As can be seen from this characteristic, the driving transistor T2 functions as a constant current source for supplying the in-phase current Ids in response to the terminal voltage Vgs when operating in the saturation region. Fig. 24 is a graph showing the voltage/current characteristics of the light-emitting element EL. The horizontal axis represents the anode voltage V, and the drive current is drawn in the vertical direction. Further, the anode voltage of the light-emitting element EL is the gate voltage of the driving transistor T2. The current/voltage characteristics of the light-emitting element EL change over time, and the characteristic curve tends to be gentle as time passes. Therefore, even if the driving current (4) is constant, the anode voltage (thortion voltage) v still changes. At this point, the pixel circuit 2 shown in FIG. 23 is driven by the driving transistor 2 in the saturation region, and Since the driving current of the response voltage Vgs is generated in the gate current with respect to the variation of the drain voltage, the luminance of the light-emitting element can be kept constant regardless of the temporal change of the characteristics. FIG. 25 is a circuit diagram showing another example of a conventional pixel circuit. The difference from the pixel circuit of Fig. 23 which has been previously shown is that the driving transistor η is changed from the p channel type to the N channel type. In the manufacturing process of the circuit, it is advantageous to form all of the transistors constituting the pixel into an N-channel type. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] The display panel is highly refined and large-scale, and the number of scanning lines exceeds 1_. A plurality of scanning lines are also lined up and the scanning scanner is also λ typed. In recent years, with the enlargement of the display panel and the drive unit, 133422.doc 200935384 has been developed as a block drive. In this case, the drive unit of the display device performs segmentation by dividing the scan line by a specific number of bars. The block unit sequentially drives the blocks of the pixels in the row and column, and sequentially scans the scan lines in each block to sequentially drive the lines of the pixels in column units to sequentially display the image on the panel. ❹
於以往之區塊驅動,於位在相鄰區塊之交界之像素列 間,由於動作條件之差異而產生亮度差,具有有損畫面均 勻性之問題。於前後1對之區塊,先行區塊之最後像素列 係於》亥區塊最後被予以線依次掃描。另—方面,隨後區塊 之最初像素列係最初被予以線依次掃描。絲區塊之最終 列像素及後區塊之開頭像素列係即使互相鄰接,但若從 驅動條件來看,線依次掃描之順序為最後及最初,時間上 動條件極端地相異,此係成為兩像素列間之微妙亮度 異而顯現,成為晝面均勻性降低之原因。 [解決問題之技術手段] 有鑑於上述以往之姑你^ 0日 ..§§ . ^ 技術問喊,本發明係以於區塊驅t 式之顯不裝置改善畫面 勻性作為目的。為了達成該巨 叫休取以下手段亦 含.傻去陆 方即,本發明為一種顯示裝置,其 δ .像素陣列部,其係包 行狀之伊 配置為列狀之掃描線、配】 行列狀之像素…-掃描線與各信號線交叉之部矣 1豕常,及驅動部,复在丄 驅動各像音.'、’、、”里由該掃描線及信號繞 合像素,别述駆動部係以 動’其係每特定條數區分掃料=下驅動:㊣塊依攻 依次驅動行列狀之像 、”予以區塊化,以區塊, 、 線依次驅動,其係於各區场 133422.doc 200935384 掃描各掃描線,以列單位依次驅動像素。作為特徵事項係 於相鄰區㈣’控制為該線依次驅動之掃描方向互相相 反0 於一態樣,前述驅動部包含:信號選擇器,其係對行狀 之信號線供給包含與灰階相應之信號電位及特定基準電位 《影像信號;寫入掃描器,其係對列狀之掃描線依次供給 控制信號;及驅動掃描器,其係對與各掃描線呈平行配置 ❿之供電線供給以高電位與低電位切換之電源電壓;前述像 素包含:取樣用電晶體,其係一方電流端連接於信號線, 控制端連接於掃描線;驅動用電晶體,其係成為没極側之 電流端連接於供電線,成為閘極之控制端連接於該取樣用 電=體之另一方電流端;發光元件,其係連接於該驅動用 電晶體之成為源極侧之電流端;及保持電容,其係連接於 該驅動用電晶體之源極與閘極間;前述驅動掃描器係將列 狀之供電線各匯集特定條數予以區塊化,以區塊單位依序 G '扁移相位’切換高電位與低電位,進行區塊依次驅動,且 於區塊内以相同相位切換特定條數之供電線之電位;前述 冑人掃描器係於各區塊内’進行於每水平週期依次對各掃 描線供給控制信號之線依次驅動,且於相鄰區塊間,將該 線依次驅動之掃描方向控制為互相相反。最好前述電源掃 描器於區塊依次驅動中,進行將各供電線一起從高電位切 換為低電位,於降低該驅動用電晶體之源極電麼後,使各 供電線-起從低電位回到高電位之修正準備動作·另一方 面,前述寫入掃描器於線依次驅動令,前述信號線為基準 133422.doc 10 200935384 。立,,對各掃描線供給控制 體,提高該驅動用雷…。唬開啟该取樣用電晶 予以放電,以#㈣ 電磨’進行將該保持電容 其臨限電2Γ 晶體之閉極與源極間之電層趨向 次驅動中,正動作。而且,前述寫入掃描器係於線依 制作號,^線為信號電位時,對各掃描線供給控 料Hr取樣用電晶體,進行將錢電位寫入於該 使供心動作;前述信號選擇器係於相鄰區塊間, 述雷:搞,之信號電位之順序互相相反。而且,前 器。、^包含對應於各區塊而分割之複數間極駆動 電!^他態樣,各像素至少包含:取樣用電晶體、驅動用 電曰山曰體、保持電容及發光元件;前述取樣用電晶體係其控 制端連接於該掃描線’其!對電流端連接於該信號線與該 驅動用電晶體之控制端間;前述驅動用電晶體係^對電流 端之一方連接於該發光元件,另一方連接於電源;前述保 持電容係連接於該驅動用電晶體之控制端與電流端間;前 述驅動部至少包含:寫入掃描器’其係對各掃描線供給控 制L號,及k號選擇器,其係對各信號線切換信號電位與 基準電位而供給;前述取樣用電晶體係於該信號線處於基 準電位時,按照供給至该掃描線之控制信號來進行臨限電 壓修正動作’於該保持電容寫入相當於該驅動用電晶體之 臨限電壓之電壓,並且於該信號線處於信號電位時,按照 供給至該掃描線之控制信號來進行信號電位寫入動作,從 該信號線取樣信號電位,並寫入於該保持電容;前述驅動 133422.doc 11 200935384 電:二係將與寫入於該保持電容之信號電位相應之驅動 至該發光元件以使其發光;前述寫入掃描器係每 ^ h掃描線予以區塊化’且合成分配給特定條數 之=描線各個之掃描期間,作為分成第—期間及第二期間 之-合成期間;前述寫入掃描器係依次於每合成期間選擇 各區塊’將像素陣列部予以區塊依次駆動,並且於各合成 期間之該第-期間’對屬於—區塊之㈣條數之掃描線— 起供給控㈣號’以區塊單位執行臨限電壓修正動作;於 该第:㈣’對屬於—區塊之特定條數之掃描線依次輸出 丄制L號進行線依次驅動’並且於像素之每列依次執行 仏號電位寫入動作;於相鄰區塊,對各掃描線依次輸出控 制㈣,使進行線依次驅動之掃描方向互相相反。最好前 述寫入掃描器包含對應於各區塊而分割之複數閘極驅動 ^而且’於相鄰區塊間屬於互相相鄰之列之像素,係完 成臨限電壓修正動作後至進人信號電位寫人動作之時間相 同。 【實施方式】 [發明之效果] 根據本發明’於相鄰區塊間控制為線依次驅動之掃描方 向互相相反。藉此’於位在相鄰區塊之交界之像素列間, 動作條件之差異成為最小,不會產生亮度差,因此可改善 畫面之均勻十生。於前後1對之區土鬼,先行區塊之最後像素 列係於該區塊最後被予以線依次掃描。另一方面,隨後區 塊之最初像素列亦於最後被予以線依次掃描。此係由於在 133422.doc •12- 200935384 1 目鄰區塊間’控制為線依次驅動之掃描方向互相相反所 致。互相鄰接之先行區塊之最終列像素與隨後區塊之開頭 像素列均成為最後被予以線依次掃描之列’時間上之驅動 條件相同,不會產生兩像素列間之亮度差,可改善書面均 勻性。 一 以下’參考圖式來詳細說明本發明之實施型態。圖磷 =示本發明之顯示裝置之第—實施型態之全體結構之區塊 如圖示,本顯示裝置係包含像素陣列部i、及驅動其 二驅動部(3、4、5)。像素陣列部〗包含:列狀之掃描線 ws、行狀之信號線儿、配置於兩者交又之部分之行列狀 之像素2、及對應於各像素2之各列所配置之電源線即供電 驅動部(3、4、5)包含··控制用掃描器(寫入掃描 器)4,其係對各掃描線ws依次供給控制信號,以列單位 將像素2予以線依次掃描;電源掃描器(驅動掃描器^1 係配合該線依次掃描,對各供電線邮供給於高電位與低電 ❿ 1切換之電源電壓;及信號選擇器(水平選擇器)3,其係配 合^線依次掃描,而對行狀之信號線SL供給成為影像信號 虎電位及基準電位。此外,寫入掃描器4係因應從外 口P供給之時鐘信EWSck而進行動作’並依次傳輸同樣從 夕卜部供給之開始脈衝wssp’藉此對各掃描線戰輸出控制 …驅動掃描器5係因應從外部供給之時鐘信號DSck而 進仃動作,並依次傳輸同樣從外部供給之開始脈衝吻, 藉此以線依次切換供電線DS之電位。 於本第-實施型態’ m動掃描器5係將列狀之供電線仍 133422.doc 13 200935384In the conventional block driving, the difference in operating conditions is caused by the difference in operating conditions between the pixel columns at the boundary of adjacent blocks, which has the problem of detrimental picture uniformity. In the block before and after the block, the last pixel column of the preceding block is finally scanned by the line in the block. On the other hand, the first pixel column of the subsequent block is initially scanned in line. The final column pixel of the silk block and the first pixel column of the rear block are adjacent to each other. However, if the order of the lines is sequentially scanned from the driving condition, the order of the time is extremely different, and the system becomes extremely different. The subtle brightness between the two pixel columns is different, which causes the uniformity of the kneading surface to decrease. [Technical means to solve the problem] In view of the above-mentioned past, you are the one who wants to improve the uniformity of the screen. In order to achieve the screaming of the following means, the following means are also included. The present invention is a display device, wherein the δ. pixel array portion is arranged in a row-like shape as a column-shaped scanning line, and arranged in a matrix. The pixel...-the portion where the scanning line intersects with each signal line, and the driving portion, which is used to drive the respective sounds in the '', ', and '', and the pixel and the signal are wrapped around the pixel. Departments use the 'series to distinguish the number of scans per unit number = lower drive: the positive block drives the image of the array in accordance with the attack," and the block is made, driven by blocks, lines, and in each zone. 133422.doc 200935384 Scans each scan line to drive pixels in column units. The characteristic matter is that the adjacent region (four) 'controls that the scanning directions sequentially driven by the line are opposite to each other, and the driving portion includes: a signal selector that supplies the signal line corresponding to the row to include the gray scale. a signal potential and a specific reference potential "image signal; a write scanner that sequentially supplies control signals to the column-shaped scan lines; and a drive scanner that supplies the power supply lines in parallel with the respective scan lines. The power supply voltage for switching between the potential and the low potential; the pixel includes: a sampling transistor, wherein one current end is connected to the signal line, the control end is connected to the scan line; and the driving transistor is connected to the current end of the non-polar side. In the power supply line, the control terminal of the gate is connected to the other current end of the sampling power source; the light-emitting element is connected to the current terminal of the driving transistor to be the source side; and the holding capacitor is provided. Connected between the source and the gate of the driving transistor; the driving scanner divides the column-shaped power supply lines into a specific number of blocks, and blocks the unit In the order of G 'flat shift phase', the high potential and the low potential are switched, and the blocks are sequentially driven, and the potential of the power supply line of a specific number is switched in the same phase in the block; the aforementioned human scanner is in each block. The lines for sequentially supplying control signals to the respective scanning lines are sequentially driven in each horizontal period, and the scanning directions for sequentially driving the lines are controlled to be opposite to each other between adjacent blocks. Preferably, the power supply scanner is sequentially driven in the block, and the power supply lines are switched from a high potential to a low potential. After the source of the driving transistor is lowered, the power supply lines are driven from a low potential. Returning to the high-potential correction preparation operation. On the other hand, the write scanner sequentially drives the command on the line, and the signal line is the reference 133422.doc 10 200935384. The control unit is supplied to each scanning line to improve the driving force.唬 Turn on the sampling transistor to discharge, and use #(四)Electric grinding to carry out the holding capacitor to limit the current. 2Γ The electric layer between the closed and the source of the crystal tends to be driven in the sub-drive. Further, the write scanner is configured to supply a control material Hr sampling transistor to each scanning line when the line is a signal potential, and to write a money potential to the centering operation; the signal selection The device is connected between adjacent blocks, and the order of the signal potentials is opposite to each other. Moreover, the front is. And ^ include a plurality of poles that are divided corresponding to each block. In other aspects, each pixel includes at least: a sampling transistor, a driving electric scorpion body, a holding capacitor, and a light-emitting element; The crystal system has its control terminal connected to the scan line 'its! a current terminal is connected between the signal line and a control terminal of the driving transistor; the driving transistor system is connected to the light emitting element by one of the current terminals, and the other is connected to the power source; the holding capacitor is connected to the current source The driving transistor is connected between the control terminal and the current terminal; the driving portion includes at least: a writing scanner that supplies a control L number to each scanning line, and a k-number selector that switches the signal potential to each signal line The sampling electric potential system performs a threshold voltage correcting operation according to a control signal supplied to the scanning line when the signal line is at a reference potential, and the writing of the holding capacitor corresponds to the driving transistor. a voltage of a threshold voltage, and when the signal line is at a signal potential, a signal potential writing operation is performed according to a control signal supplied to the scanning line, and a signal potential is sampled from the signal line and written in the holding capacitor; The foregoing driving 133422.doc 11 200935384: the second system is driven to the light emitting element to emit light corresponding to the signal potential written in the holding capacitor The aforementioned write scanner is squashed for every ^h scan line and is synthesized and allocated to a specific number of scan lines for each of the trace lines, as a synthesis period divided into a first period and a second period; the aforementioned write scan The device sequentially selects each block in each synthesis period, and the pixel array portion is sequentially slid, and the first-period of each synthesis period is supplied to the scan line belonging to the (four) number of the block (four). No. 'Performs the threshold voltage correction action in block units; in the fourth: (4) 'Scan lines corresponding to the specific number of blocks belonging to the block sequentially output the L number in sequence to drive ' and sequentially execute in each column of the pixel The nickname potential write operation; in the adjacent blocks, the control (4) is sequentially output to each scan line, so that the scan directions in which the lines are sequentially driven are opposite to each other. Preferably, the foregoing write scanner includes a plurality of gate drivers divided corresponding to the respective blocks, and 'pixels belonging to mutually adjacent columns between adjacent blocks, and the signal is input after the threshold voltage correction operation is completed. The time at which the potential is written is the same. [Embodiment] [Effects of the Invention] According to the present invention, the scanning directions in which the lines are sequentially driven between adjacent blocks are opposite to each other. Thereby, the difference in operating conditions is minimized between the pixel columns at the boundary of the adjacent blocks, and the luminance difference is not generated, so that the uniformity of the picture can be improved. In the first pair of areas, the last pixel column of the preceding block is scanned at the end of the block. On the other hand, the first pixel column of the subsequent block is also scanned sequentially in the end. This is due to the fact that the scanning directions of the lines controlled by the line between 133422.doc •12-200935384 1 and the adjacent blocks are opposite to each other. The final column pixel of the preceding block adjacent to each other and the first pixel column of the subsequent block become the last column to be sequentially scanned by the line. The driving condition is the same in time, and the brightness difference between the two pixel columns is not generated, and the writing can be improved. Uniformity. The embodiments of the present invention are described in detail below with reference to the drawings. Fig. phosphorus = block showing the entire structure of the first embodiment of the display device of the present invention. As shown, the display device includes a pixel array portion i and two driving portions (3, 4, 5). The pixel array unit includes: a column-shaped scanning line ws, a line-shaped signal line, a pixel 2 arranged in a matrix of the intersection of the two, and a power supply line corresponding to each column of each pixel 2 The drive unit (3, 4, 5) includes a control scanner (write scanner) 4 that sequentially supplies control signals to the respective scan lines ws, and sequentially scans the pixels 2 in units of lines; the power supply scanner (The drive scanner ^1 is sequentially scanned with the line, and each power supply line is supplied with a high-potential and low-power ❿ 1 switching power supply voltage; and a signal selector (horizontal selector) 3, which is sequentially scanned with the line The signal line SL is supplied as the image signal and the reference potential. The write scanner 4 operates in response to the clock signal EWSck supplied from the external port P, and sequentially transmits the same from the beginning of the supply. The pulse wssp' is used to control the output of each scan line. The drive scanner 5 is operated in response to the externally supplied clock signal DSck, and sequentially transmits the pulse kisses which are also supplied from the outside, thereby sequentially Switching the potential of the power supply line DS. In this first-implementation type, the m-scanner 5 is a column-shaped power supply line still 133422.doc 13 200935384
匯集?特定條數予以區塊化,以區塊單位依序偏移相位, 、行内電位Vcc與低電位Vss之切換,且於區塊内以相同相 位切換特定條數之供電線DS之電位。於圖示之例中,驅動 掃描器5係將列狀之供電線仍匯集每2條予以區塊化,以區 塊單位依序偏移相位,進行高電位與低電位之切換,且於 ,塊内以相同相位切換2條供電線DS之電位。其中,本發 予以區塊化之條數不限於2條,一般於複數列(複數段)將 供電線(電源線)DS之驅動時序予以共通化。 :驅動掃描器5基本上以偏移暫存器、及逐一連接於其各 奴之輸出緩衝器所構成。偏移暫存器係因應從外部供啥之 時鐘㈣DSCk而進行動作,並依次傳輸同樣從外部供給之 ° ^號DSsp ’藉此對各段逐—輸出作為電源切換根源之 工制兑號。輸出緩衝器係因應該控制信號’於高電位與低 電位切換電源線,並供給至供電線DS。於本發明,藉 線之控制時序共通化,以於複數電源線間制輸 係斟徂益藉此’可刪減輸出緩衝器之數目。輸出緩衝器 复写:電線崎給電源’因此需要甚大之電流驅動能力, 數:了:!大。藉由刪減該器件尺寸大之輸出緩衝器之個 謀求周邊驅動部之電路尺寸之縮小化、成本降低、 ::器':例如圖1之例’若以2個供電_共用1個輸出 乍為全體可將輸出緩衝器之個數比第—實施型態 可伟/且’若將1G條供電線仍之控制時序μ共通化, 勒出緩衝器之個數成為第一實施型態之1〇分之卜 圖2係表示圖1所示之顯示裝置所含之像素2之具體結構 133422.doc 200935384collection? The specific number of blocks is categorized, and the phase is shifted in order by the block unit, the switching between the in-row potential Vcc and the low potential Vss, and the potential of the power supply line DS of a specific number is switched in the same phase in the block. In the example shown in the figure, the driving scanner 5 divides the power supply lines of the column shape into two blocks, and sequentially shifts the phase by the block unit to switch between the high potential and the low potential, and The potential of the two power supply lines DS is switched in the same phase in the block. Among them, the number of blocks to be blocked by the present invention is not limited to two, and the driving sequence of the power supply line (power supply line) DS is generally common to the plurality of columns (complex segments). The drive scanner 5 is basically constituted by an offset register and an output buffer connected to each of the slaves one by one. The offset register operates in response to the clock (4) DSCk supplied from the outside, and sequentially transmits the DSsp s which is also supplied from the outside, thereby outputting the power exchange number as the source of the power supply for each segment. The output buffer is switched to the power supply line DS at a high potential and a low potential due to the control signal '. In the present invention, the control timing of the borrowing line is common to the benefit of the multiple power line inter-system transmissions, thereby reducing the number of output buffers. Output buffer Overwrite: The wire is supplied to the power supply. Therefore, it requires a very large current drive capability. Number: :! Big. By reducing the size of the output buffer of the device size, the circuit size of the peripheral driver unit is reduced, and the cost is reduced. The device ": for example, the example of FIG. 1" is shared by two power supplies. For the whole, the number of output buffers can be compared with the first implementation type and if the control timing μ of the 1G power supply line is still common, the number of the buffers is the first embodiment. Figure 2 shows the specific structure of the pixel 2 included in the display device shown in Figure 1. 133422.doc 200935384
φ 之電路圖。如圖示,本像素電路2係以由有機EL器件等所 代表之2端子型(二極體型)之發光元件EL·、N通道型之取樣 用電曰曰體Ή、同樣N通道型之驅動用電晶體τ2及薄臈類型 之保持電容C1所構成。取樣用電晶體Τι係作為其控制端之 閑極連接於掃描線WS,作為其流端之源極及汲極之 連接於彳s號線SL,另一方連接於驅動用電晶體T2之閘 極G。驅動用電晶體T2係其源極及汲極之一方連接於發光 疋件肛,另一方連接於供電線DS。本型態之驅動用電晶 體T2為N通道型’作為其單方之電流端之没極側連接 電線DS,作為另—留士+泰4 …、 1=馮另早方之電流端之源極s側連接於發光元 件EL之陽極側。發光元件EL之陰極固定於特定陰極電位Circuit diagram of φ. As shown in the figure, the pixel circuit 2 is a two-terminal type (diode type) light-emitting element EL· represented by an organic EL device or the like, an N-channel type sampling device, and the same N-channel type. It is composed of a transistor τ2 and a thin capacitor type holding capacitor C1. The sampling transistor Τι is connected to the scanning line WS as the idle terminal of the control terminal, and the source and the drain of the current terminal are connected to the 彳s line SL, and the other is connected to the gate of the driving transistor T2. G. The driving transistor T2 has one of its source and drain connected to the light-emitting element anus, and the other is connected to the power supply line DS. The driving transistor T2 of this type is an N-channel type 'as the non-polar side connecting wire DS of its single-side current end, as another source of the current terminal of the monk + Thai 4 ..., 1 = von another early The s side is connected to the anode side of the light emitting element EL. The cathode of the light-emitting element EL is fixed at a specific cathode potential
Vcat。保持電容C1連接於作為驅動用電晶體T2之電流端之 原極s與作為控制端之閘極G間。對於包括該結構之像素 2 ’控一制用掃描器(寫入掃描器)4係將掃描線w s切換於低電 位與兩電位間’藉此依次輸出控制信號,以列單位來將像 素2予以線依次掃描。電源掃描器(驅動掃描器)5係配合線 依久掃描’對各供電線仍供給於高電位Vee與低電位Vss =換之電源電壓。信號選擇器(水平選擇器3)係配合線依次 掃描對行狀之Ί5號線几供給成為影像信號之信號電位 Vsig及基準電位v〇fs。 於該結構,供電線仍為高電位VcC且信號線SL4v〇f 時’取樣用電晶體T1因應控制信號而開啟,進行將發光天 件EL從點燈狀態切換為熄燈狀態之熄燈動作。接下來,將 供電細從高電位Vcc切換為低電位b,並且於供電線 133422.doc 15 200935384 DS處於低電位vss之期間,不開啟取樣用電晶體I〗而降低 驅動用電晶體Τ2之源極電壓,進行用以將閘極G ·源極s 間電壓Vgs設定為超過驅動用電晶體丁2之臨限電壓vth之電 壓之準備動作。其後,使供電線Ds&低電位Vss回到高電 • 位VCC,且於信號線SL為基準電位Vofs時,取樣用電晶體 T1因應控制仏號開啟,提尚驅動用電晶體T2之源極電壓, 進行將保持電容(:丨予以放電,以使閘極G·源極s間電壓 Vgs趨向其臨限電壓vth之修正動作。 若根據本發明,首先於供電線DS為高電位Vcc且信號線 SL為基準電位v〇fs時,進行將發光元件el&點燈狀態切換 為熄燈狀態之熄燈動作。接下來,將供電線Ds切換為低電 位Vss,並且於供電線DS處於低電位Vss之期間,不使取樣 用電晶體τι開啟,進行用以將驅動用電晶體T2之閘極•源 極間電壓Vgs設定為大於其臨限電壓Vth之電壓之準備動 作八後’使供電線DS從低電位Vss回到高電位ycc,且 Ο 於信號線乩為基準電位¥〇&時,開啟取樣用電晶體T1,進 打將保持電容C1予以放電,以使驅動用電晶體T2之閘極. 源極間電壓Vgs趨向其臨限電壓Vth之修正動作。如此,藉 •由順序地進行熄燈動作、準備動作及修正動作,以防止誤 動作,可確實且安定地進行驅動用電晶體T2之臨限電壓修 正。特別於準備動作無須開啟取樣用電晶體T1,藉由降低 驅動用電晶體T2之源極電壓,以防止像素2之誤動作,並 且謀求修正動作之安定化。 圖3-1係供圖2所示之第一實施型態之動作說明之時序 133422.doc -16- 200935384 圖此夕卜本時序圖係以共通之時序來控制3段份之電源 線。圖3-!之時序圖係表示供給至信號線之影像信號(輸入 信號)、以每3條被區塊化之供電線(電源線)之電位變化、 及施力於各列(各& )之掃描線之控制信號(控制脈衝)。首 A ’輸入信號係於】水平期間_内,交互地切換信號電 位Vsig與基準電位Vofse電源線係第一〜三段之電位變化 被共通化,i〜3段同時從高電位切換為低電位,其後回復 ❹ 到高電位。另-方面,第-段之掃描線係於輸入信號為 V〇fs、電源線為高電位Vcc時’輸出第一發控制脈衝,對 應列之像素從點燈狀態切換為熄燈狀態。其後,連續發生 第二〜四發控制脈衝,重複3次臨限電壓修正動作。最後發 生第五發控制脈衝,進行信號電位Vsig之寫入及遷移率修 正0 對於第二段之掃描線,其相位與第一段僅偏移ih,依次 輸出第一個〜第五個控制脈衝,與第一段同樣地進行熄燈 〇 動作、臨限電壓修正動作及信號電位寫入動作。第三段亦 同樣從第二段偏移1H相位,依次輸出5個控制脈衝,進行 熄燈動作、時間分割修正動作及信號寫入動作。 右動作次序進入第四段〜第六段,驅動掃描器係將在第 四段〜第六段共通化之電源線,暫且從高電位Vcc切換為低 電位Vss,其後回到Vcc。如此,驅動掃描器係與第—〜三 段偏移相位來進行第四〜六段之電源線之電位切換。對應 於此,於第四段〜第六段之各掃描線依次施加5連控制脈 衝’重複與第一〜三段同樣之動作。 133422.doc 17 200935384 從以上說明可闌明,本實施型態係以共通時序,來將3 k伤之電源線予以電位控制。藉由如此,可減少驅動掃描 器之輸出數(於本實施例可成為1/3),可實現低成本化。 此外,本實施型態係成為使電源線從Vss回到VCC後至開 始第一次臨限電壓修正動作之時間,於第一段、第二段及 第三段不同之結構。如前述,使電源線從Vcc回到Vss時, 若流於驅動用電晶體之電流越小(驅動用電晶體之Vgs越 ❹ 小),則閘極電壓及源極電壓幾乎不上升,於任一段均可 正常地進行臨限電壓修正動作。 圖3-2係供圖2所示之像素之動作說明之其他時序圖。該 時序圖係以時間軸為共通而表示掃描線ws之電位變化、 供電線(電源線)DS之電位變化、信號線儿之電位變化。掃 描線WS之電位變化係表示控制信號,其進行取樣用電晶 體了】之開閉控制。供電線仍之電位變化係表示電源電^曰 Vss之切換。而且,信號線^之電位變化係表示輸入 ❹ ㈣之信號電位Vsig與基準電位V()fs之切換。而且與該 等電位變化並行地亦表示驅動用電晶體τ 2之間極G及源極 s之電位變化。如前述’閘極G與源極s之電位差為、'。、 該時序圖係配合像素之動作次序,簡便地將期間分名丨為 (υ〜ου。於點燈期間(1)’像素處於發光狀態。若成為媳 燈期間(2) ’像素從發光狀態切換為非發光狀態。接下來7 於準備期間(3)〜(5),像素係進行驅動用電晶體之臨限Μ 修正用之準備動作。其後,於修正期間⑹,進行實 限電㈣正動作。通常該修正期間⑹係隔著待機期 133422.doc 200935384 而重複複數次,完成臨限電壓修正動作。其後, 間(9),信號電位寫入於保持電容C1,並且進行驅動= 晶體T!之遷移率修正。最後前進至發光期間⑴),Vcat. The holding capacitor C1 is connected between the primary pole s which is the current terminal of the driving transistor T2 and the gate G which is the control terminal. For the pixel 2 including the structure, the scanner (write scanner) 4 controls the scanning line ws to switch between the low potential and the two potentials, thereby sequentially outputting the control signal, and the pixel 2 is given in column units. The lines are scanned in sequence. Power Scanner (Drive Scanner) 5 Series Matching Lines Dependent Scan 'The power supply lines are still supplied to the high potential Vee and the low potential Vss = the power supply voltage. The signal selector (horizontal selector 3) sequentially scans the line-like line 5 to supply the signal potential Vsig and the reference potential v〇fs of the image signal. In this configuration, when the power supply line is still at the high potential VcC and the signal line SL4v〇f, the sampling transistor T1 is turned on in response to the control signal, and the light-off operation for switching the light-emitting element EL from the lighting state to the light-off state is performed. Next, the power supply fine is switched from the high potential Vcc to the low potential b, and during the period when the power supply line 133422.doc 15 200935384 DS is at the low potential vss, the source of the driving transistor Τ2 is lowered without turning on the sampling transistor I. The electrode voltage is prepared for setting the gate voltage Ggs of the gate G and the source s to a voltage exceeding the threshold voltage vth of the driving transistor D2. Thereafter, the power supply line Ds & low potential Vss is returned to the high power bit VCC, and when the signal line SL is the reference potential Vofs, the sampling transistor T1 is turned on in response to the control nickname, and the source of the driving transistor T2 is raised. The pole voltage is corrected by the holding capacitor (: 丨 is discharged so that the voltage Ggs between the gate G and the source s tends to its threshold voltage vth. According to the present invention, first, the power supply line DS is at the high potential Vcc and When the signal line SL is the reference potential v〇fs, the light-emitting element el& lighting state is switched to the light-off state. Next, the power supply line Ds is switched to the low potential Vss, and the power supply line DS is at the low potential Vss. In the meantime, the sampling transistor τ1 is not turned on, and the gate/source voltage Vgs of the driving transistor T2 is set to a voltage greater than the threshold voltage Vth. When the low potential Vss returns to the high potential ycc, and when the signal line 乩 is the reference potential ¥〇&, the sampling transistor T1 is turned on, and the holding capacitor C1 is discharged to drive the driving transistor T2. Polar. Source-to-source voltage Vgs In the correction operation of the threshold voltage Vth, the backlight operation, the preparation operation, and the correction operation are sequentially performed to prevent malfunction, and the threshold voltage correction of the driving transistor T2 can be surely and surely performed. The preparation operation does not require the sampling transistor T1 to be turned on, and the source voltage of the driving transistor T2 is lowered to prevent the pixel 2 from malfunctioning, and the correcting operation is stabilized. FIG. 3-1 is for the second embodiment shown in FIG. Timing of an action description of an implementation type 133422.doc -16- 200935384 The timing diagram of this embodiment controls the power supply line of three segments with a common timing. The timing diagram of Figure 3-! shows the supply to the signal line. The image signal (input signal), the potential change of the power supply line (power supply line) that is diced every three, and the control signal (control pulse) that applies the scanning line of each column (each & A 'the input signal is in the horizontal period _, the switching potential between the signal potential Vsig and the reference potential Vofse power line first to third sections is common, and the i~3 sections are simultaneously switched from the high potential to the low potential. After returning to 高 to high potential. On the other hand, the scanning line of the first segment is when the input signal is V〇fs and the power line is high Vcc, the first control pulse is output, and the pixels of the corresponding column are switched from the lighting state. After the light is turned off, the second to fourth control pulses are continuously generated, and the threshold voltage correction operation is repeated three times. Finally, the fifth control pulse is generated, the signal potential Vsig is written, and the mobility correction is 0. The scan line is shifted from the first stage by only ih, and the first to fifth control pulses are sequentially output, and the light-off 〇 operation, the threshold voltage correction operation, and the signal potential writing operation are performed in the same manner as the first stage. Similarly, the third stage is shifted from the second stage by 1H phase, and five control pulses are sequentially outputted to perform the light-off operation, the time division correction operation, and the signal writing operation. The right action sequence enters the fourth to sixth segments, and the drive scanner switches the power line common to the fourth to sixth segments, temporarily switching from the high potential Vcc to the low potential Vss, and then returns to Vcc. In this manner, the scanner is driven to shift the potential of the power lines of the fourth to sixth stages by shifting the phase from the third to the third stage. Corresponding to this, five consecutive control pulses are sequentially applied to the respective scanning lines of the fourth to sixth segments, and the same operations as the first to third segments are repeated. 133422.doc 17 200935384 It can be explained from the above description that this embodiment adopts a common timing to control the potential of the 3 k wound power line. As a result, the number of outputs of the drive scanner can be reduced (in this embodiment, it can be 1/3), and the cost can be reduced. Further, this embodiment is a configuration in which the power supply line is returned from Vss to VCC to the first threshold voltage correction operation, and is different in the first stage, the second stage, and the third stage. As described above, when the power supply line is returned from Vcc to Vss, if the current flowing through the driving transistor is smaller (the Vgs of the driving transistor is smaller), the gate voltage and the source voltage hardly rise. The threshold voltage correction action can be performed normally in one section. Figure 3-2 is another timing diagram for the description of the operation of the pixel shown in Figure 2. The timing chart shows that the potential of the scanning line ws changes, the potential of the power supply line (power supply line) DS changes, and the potential of the signal line changes with the time axis being common. The potential change of the scanning line WS indicates a control signal for performing the opening and closing control of the sampling electric crystal. The potential change of the power supply line indicates the switching of the power supply voltage Vss. Further, the potential change of the signal line ^ indicates the switching of the signal potential Vsig of the input ❹ (4) and the reference potential V() fs. Further, in parallel with the change in the isoelectric potential, the potential change between the electrode G and the source s between the driving transistor τ 2 is also shown. As described above, the potential difference between the gate G and the source s is '. The timing chart is matched with the order of the pixels, and the period name is simply changed to (υ~ου. During the lighting period (1) 'the pixel is in the light-emitting state. If it is the xenon period (2) 'pixel from the light-emitting state Switching to the non-light-emitting state. Next, during the preparation period (3) to (5), the pixel system performs the preparatory operation for the threshold of the driving transistor. Then, during the correction period (6), the power is limited (4). Normal operation. Normally, the correction period (6) is repeated several times with the standby period 133422.doc 200935384, and the threshold voltage correction operation is completed. Thereafter, between (9), the signal potential is written to the holding capacitor C1, and driving is performed = The mobility correction of the crystal T!. Finally, proceed to the light-emitting period (1)),
非發光狀態切換為發光狀態。此外,圖中為了說明之簡 化’於1次臨限電壓修正期間(6)進行修正動作。 B 纟後’刖進至寫人期間/遷移率修正期間(9) 〇於此,# 像信號之信號電位V s i g係以加在v t h之形式寫入於保持= 箱’並且遷移率修正用之電壓Δν係從保持於保持電容 C1之電壓減去。於該寫人期間/遷移率修正期間(9),於信 號線SL處於信號電位Vsig之時間冑,必須使取樣用電晶體 T1成為導通狀態。其後’前進至發光期間⑴),發光元件 係以因應信號電位Vsig之亮度發光。屆時,由於信號電位 Vsig係藉由相當於臨限電壓Vth之電壓及遷移率修正用之 電壓ΔΥ來調整,因此發光元件£匕之發光亮度不會受到驅 動用電晶體T2之臨痕電壓Vth或遷移率μ之偏差影響。此 φ 外,於發光期間(11)之最初進行自舉啟動動作,在將驅動 用電晶體T2之閘極G/源極S間電壓Vgs維持於一定之狀態 下’驅動用電晶體T2之閘極電位及源極電位上升。 接著’參考圖4-1〜圖4-11,來詳細說明圖2所示之像素 電路之動作《首先’發光元件EL之發光期間(1)係如圖4-1 所示’電源為Vcc ’取樣用電晶體T1為關閉狀態。此時, 驅動用電晶體T2係設定為在飽和區域進行動作,因此流於 發光元件EL之電流Ids係因應驅動用電晶體T2之閘極源極 間電壓Vgs而取定特性式1所示之值。 133422.doc •19- 200935384 接著,於熄燈期間(2),於信號線電位為Vofs時,開啟取 樣用電晶體T1,於驅動用電晶體T2之閘極输入Vofs(圖4-2)。藉此,驅動用電晶體T2之閘極源極間電壓成為臨限電 壓以下’於發光元件EL無法流有電流,因此發光元件EL 熄燈。屆時’加在發光元件EL之電壓成為發光元件EL之 臨限電壓,因此發光元件EL之陽極電壓成為發光元件EL 之臨限電壓與陰極電壓之和,總言之成為Vcat+Vthel。 進一步於一定時間經過後’於準備期間,使電源電 壓從Vcc變化為Vss。此時,電源側成為驅動用電晶體丁2之 源極’如圖4-3,從發光元件EL之陽極往電源流有電流。 藉此,發光元件EL之陽極之電壓係隨著時間降低。此時, 由於取樣用電晶體T1關閉’因此驅動用電晶體T2之閘極亦 隨著發光元件EL之陽極電壓降低。總言之,驅動用電晶體 • T2之閘極源極間電壓(驅動用電晶體γ2之閘極與電源間電 位)隨著時間變小。 ❹ 此時,右驅動用電晶體Τ2在飽和區域進行動作,總言之 若為Vgs-VthdSVds,則於期間(4),如圖4_4所示,驅動用 電晶體T2之閘極成為Vss+Vthd。於此,Vthd為驅動用電晶 體T2之閘極電源間之臨限電壓。 於期間(5),電源電壓再度設為Vcc(圖4_5)。此時,輸入 於驅動用電晶體T2之閘極之耦合量設為Δν,發光元件el 之陽極電壓設為Vx。藉由將電源設為Vcc,驅動用電晶體 T2之源極成為發光元件乩之陽極,藉由驅動用電晶體丁2 之閘極源極間電M Vgs,電流從電源流往發光元件el之陽 133422.doc -20- 200935384 極,若驅動用電晶體T2之閘極源極間電壓小於臨限電壓, 則電流幾乎不會造成閘極、源極上升。 然後,於臨限值修正期間(6),於信號電壓為v〇fs時,開 啟取樣用電晶體T1 (圖4-6)。藉此,驅動用電晶體丁2之閘 極電壓成為Vofs,閘極電壓之變化量係以根據保持電容 ci、閘極源極間之寄生電容Cgs、發光元件el之寄生電容The non-lighting state is switched to the light emitting state. Further, in the figure, the simplification of the explanation is performed in the first threshold voltage correction period (6). B 纟 刖 刖 刖 刖 写 写 写 写 写 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移 迁移The voltage Δν is subtracted from the voltage held at the holding capacitor C1. During the write period/mobility correction period (9), when the signal line SL is at the signal potential Vsig, the sampling transistor T1 must be turned on. Thereafter, the light source is caused to emit light at a luminance corresponding to the signal potential Vsig. At this time, since the signal potential Vsig is adjusted by the voltage corresponding to the threshold voltage Vth and the voltage ΔΥ for correcting the mobility, the light-emitting luminance of the light-emitting element is not affected by the tracking voltage Vth of the driving transistor T2 or The deviation of the mobility μ is affected. In addition to this φ, the bootstrap start operation is performed at the beginning of the light-emitting period (11), and the gate of the driving transistor T2 is held while the voltage Ggs between the gate G and the source S of the driving transistor T2 is maintained constant. The potential and source potentials rise. Next, referring to FIG. 4-1 to FIG. 4-11, the operation of the pixel circuit shown in FIG. 2 will be described in detail. First, the light-emitting period (1) of the light-emitting element EL is as shown in FIG. 4-1, and the power supply is Vcc. The sampling transistor T1 is in a closed state. At this time, since the driving transistor T2 is set to operate in the saturation region, the current Ids flowing through the light-emitting element EL is determined by the characteristic value 1 of the gate-source voltage Vgs of the driving transistor T2. value. 133422.doc •19- 200935384 Next, during the light-off period (2), when the signal line potential is Vofs, the sampling transistor T1 is turned on, and Vofs is input to the gate of the driving transistor T2 (Fig. 4-2). As a result, the voltage between the gate and the source of the driving transistor T2 becomes less than the threshold voltage. The current does not flow through the light-emitting element EL. Therefore, the light-emitting element EL is turned off. At this time, the voltage applied to the light-emitting element EL becomes the threshold voltage of the light-emitting element EL. Therefore, the anode voltage of the light-emitting element EL becomes the sum of the threshold voltage of the light-emitting element EL and the cathode voltage, and is generally Vcat+Vthel. Further, after a certain period of time, the power supply voltage is changed from Vcc to Vss during the preparation period. At this time, the power source side becomes the source of the driving transistor 2, as shown in Fig. 4-3, and a current flows from the anode of the light-emitting element EL to the power source. Thereby, the voltage of the anode of the light-emitting element EL decreases with time. At this time, since the sampling transistor T1 is turned off, the gate of the driving transistor T2 also decreases with the anode voltage of the light-emitting element EL. In summary, the driving transistor • The gate-to-source voltage of T2 (the gate of the driving transistor γ2 and the potential between the power supplies) becomes smaller with time. ❹ At this time, the right drive transistor Τ2 operates in the saturation region. In general, if it is Vgs-VthdSVds, then during the period (4), as shown in Fig. 4_4, the gate of the driving transistor T2 becomes Vss+Vthd. . Here, Vthd is the threshold voltage between the gate power sources of the driving electric crystal T2. During the period (5), the power supply voltage is again set to Vcc (Fig. 4_5). At this time, the coupling amount of the gate input to the driving transistor T2 is Δν, and the anode voltage of the light-emitting element el is Vx. By setting the power supply to Vcc, the source of the driving transistor T2 becomes the anode of the light-emitting element ,, and the current flows from the power source to the light-emitting element el by the gate source-to-electrode M Vgs of the driving transistor 2 Yang 133422.doc -20- 200935384 pole, if the voltage between the gate and source of the driving transistor T2 is less than the threshold voltage, the current will hardly cause the gate and source to rise. Then, during the threshold correction period (6), when the signal voltage is v〇fs, the sampling transistor T1 is turned on (Fig. 4-6). Thereby, the gate voltage of the driving transistor D is Vofs, and the variation of the gate voltage is based on the holding capacitance ci, the parasitic capacitance Cgs between the gate and the source, and the parasitic capacitance of the light emitting element el.
Cel之一定比而輸入於源極。此時之輸入比設為层。g係由 以下式2所示之值。Cel is a certain ratio and is input to the source. The input ratio at this time is set to layer. g is a value represented by the following formula 2.
❹ g=(Cl + Cgs)/(Cl+Cgs+Cel) (2) 於該狀態下,驅動用電晶體12之閘極源極間電壓Vgs若 大於其臨限電MVth,則如圖4_6所示,從電源流有電流。 換言之,必須設定Vofs、Vss之值,以使此時之%大於驅 動用電晶體T2之臨限電壓。如前述,由於發光元视之 等價電路係以二極體及電容來表示,因此只要 _ Vcat+Vthel(發光元件EL之漏洩電流甚小於流於驅動 用電晶體T2之電流)’則驅動用電晶體T2之電流係為了將 C1及Cel充電而使用。此時,…丨係隨著時間如圖4_7上升。 於接著之待機期間(8) ’於信號電壓從Vofs變為Vsig前, 關閉取樣用電晶體T1。此時’由於驅動用電晶體了2之間極 源T間電壓大於Vth,因此如圖4_8所示流有電流,驅動用 電晶體T2之間極、源極電歷上升。此時,於發光元件EL 加有逆偏壓,因此發光元件EL不會發光。 ,;、限值取/肖動作結束後,關閉取樣用電晶體T1。接下 * ;寫入期間(9) ’化號線電位成為Vsig時’再度開啟取 133422.doc -21 · 200935384 樣用電晶體τ1(圖4_9)e Vsig成為因應灰階之電壓。驅動用 電晶體Τ2之閘極電位係為了開啟取樣用電晶體们而成為 Vslg ’但由於從電源流有電流,因此源極電位係隨著時間 上升。此時,驅動用電晶體T2之源極電壓若未超過發光元 件EL之臨限電壓Vthel與陰極電壓Vcat之和(發光元件£[之 漏洩電流若甚小於流於驅動用電晶體丁2之電流),則驅動 用電晶體T2之電流係為了將c丨及Cel充電而使用。此時, 由於驅動用電晶體T2之臨限值修正動作已完成,因此驅動 用電晶體T2所流之電流反映出遷移率^。具體而言,遷移 率大者’此時之電流量大,源極之上升亦早。相反地,遷 移率小者,電流量小’源極之上升亦慢(圖4_丨0)。藉此, 驅動用電晶體T2之閘極源極間電壓反映遷移率而變小,於 經過一定時間後’成為完成修正遷移率之Vgs。 於最後’關閉取樣用電晶體T1,若寫入結束而成為發光 期間(11)’則使發光元件EL發光。由於驅動用電晶體T2之 閘極源極間電壓為一定’因此驅動用電晶體丁2係將一定電 流Ids'流於發光元件EL,Vel上升至Ids'之電流流於發光元 件EL之電壓為止,發光元件EL發光(圖4-11)。 於本電路中,發光元件EL若發光時間變長,則其I-V特 性會變化。因此,圖中B點之電位亦變化。然而,由於驅 動用電晶體T2之閘極源極間電壓保持於一定值,因此流於 發光元件EL之電流不變化。故,即使發光元件EL之I-V特 性劣化,始終繼續流有一定電流Ids,發光元件EL之亮度 不會變化。 133422.doc • 22- 200935384 於此,思慮關於本像素電路之驅ι本驅動係如前述採 取圖3’1所不之驅動時序,但使電源線從Vss變化為v“後 至進行臨限值修正動作之時間,係於將電源線之時序作為 共通之線間不同。具體而言,相較於第N段,至第N+1段 • 進行臨限值修正為止,電源線處於Vee之電位之時間較 [因此’藉由驅動用電晶體之漏茂電流、發光元件之漏 浪電流,驅動用f晶體之源極電塵係第N+mt匕第n段上 升。 ❹ 基本上,於臨限值修正動作前,即使驅動用冑晶體之源 極電壓不同,若於臨限值修正動作,驅動用電晶體之㈣ 源極間電壓Vgs大於其臨限值電壓vth,則可正常地進行臨 I值修正動作。然而,發光亮度係取決於臨限值修正動作 前之驅動用電晶體之源極電壓。因此,於本驅動,於將電 源線之時序共通化之最終段與下一段(於圖3」為第三段及 第四段),進行臨限值修正時之驅動用電晶體之源極電壓 e 會急遽變化(從第一段至第三段係和緩地變化)。 '因& ’於顯示裝置之畫面,如圖5所示,以將電源時序 八通化之複數線(以下稱為區塊)之週期,發生如條紋之不 均。此外,於圖中較實際誇張地表示不均。 本發明係為了應付上述問題點,提案於鄰接之區塊間, 使區龙内之取樣用電晶體之掃描方向逆轉。於圖6,作為 一例而表示適用本發明之情況之時^該時序圖基本上與 圖3-1相同。於本發明’與圖3_!之情況不同之點如下:使 電源電壓從Vss成為Vcc後至進行臨限值修正動作之時間, 133422.doc -23- 200935384 在鄰接之區塊間之鄰接線相同之點;及輸入於像素之信號 電壓之輸出順序在鄰接區塊間相反之點。 ❹ ❹ 藉由利用本發明’於鄰接之區塊間之鄰接線間,可使將 電源線設為Vec後至進行臨限值修正動作之時間相同,可 使驅動用電晶體或發光元件E L之漏洩電流等所造成之驅動 用電晶體之源極電壓之上升量相同。其結果,可將應付前 如圖5所視認之區塊間之條紋不均置換為如圖7之如同陰影 之不均。此外,於圖5、7,比實際誇張表示陰影。一般而 。,於鄰接區塊間急遽變化之如條紋之不均係於1 %程度 之亮度差視認,但如陰影之和緩變化之不均係無法於ι% 程度之亮度差視認,因此藉由利用本發明,可獲得未視認 到:均之均勻晝質。而且,藉由利用本發明,即使增加構 成區塊之線數’仍不會視認到不均,因此較以往增加構成 區塊之線數亦即可減少面板之區塊數,可實現低成本化。 且本發明係採取於每鄰接區塊反轉取樣用電晶體之掃 描方向之方式,因此於未内建閘極驅動器之面板之情況 下,單元宜為閘極驅動器單位。 圖8-1係表示關於本發明之顯示裝置之第二實施型態之 f體結構之區塊圖。如圖示,本顯示裝置係包含像素陣列 邛卜及驅動其之驅動部(3、4、5)。像素陣列部^包含列 =之掃描線WS、行狀之信號線SL、配置於兩者交叉之部 分之行列狀之像素2、及斟廏於交你主。 次對應於各像素2之各列所配置之電 ^線:供電線I驅動部(3、4、5)包含:控制掃描器 (寫掃描器)4’其係對各婦描線ws依次供給控制信號, 133422.doc •24- 200935384 以列單位將像素2^以線依次掃描;電源掃描器(驅動掃描 器)5,其係配合該線依次掃#,對各供冑線的供給於第一 電位與第二電位切換之電源電壓,·及信號驅動器(水平選 擇器)3,其係配合該線依次掃描,而對行狀之信號線^ 給成為影像信號之信號電位及基準電位。此外,寫入掃描 器4係因應從外部供給之時鐘信號呢^而進行動作,並= 次傳輸同樣從外部供給之開始脈衝WSsp,藉此對各掃描 ❹ 線ws輸出控制信號。驅動掃描器5係因應從外部供仏之: 鐘信號而進行動作,並依次傳輸同樣從外部供給之開 始脈衝DSsp,藉此以線依次切換供電線Ds之電位。與圖1 所示之第-實施型態不同之點為’未以區塊單位來將供 線DS共通化^ 八% 圖8-2係表示圖8]所示之顯示裝置所含之像素2之具體 結構之電路圖。如圖示’本像素電路2係以由有機EL器件 等所代表之2端子型(二極體型)之發光元件肛、n通道型之 取樣用電曰曰體T1、同樣Nit道型之驅動用電晶體T2及薄臈 類型之保持電容C1所構成。取樣用電晶體T1係作為其控制 端之閑極連接於掃描,作為其1對電流端之源極及沒 極之-方連接S信號線SL,另—方連接於驅動用電晶㈣ :問極G。驅動用電晶體T2係其源極及汲極之一方連接於 I光7L件EL ’另—方連接於供電線DS。本型態之驅動用 電曰曰體T2為N通道型’作為其單方之電流端之没極侧連接 於供電線DS ’作為另一單方之電流端之源極§侧連接於發 光元件EL之陽極相丨丨。, @侧°發光元件EL之陰極固定於特定陰極 133422.doc -25- 200935384 電位Vcat。保持電容㈣接於 體 端之源極S與作為㈣迪”』 ㈣電阳體T2之電流 乍為控制端之閘極Gr[對於包 =制用掃描器(寫入掃描器)4係將掃描 冓; 電位與尚電位間,藉此依 、、低 像素2予以線依次掃描。電^ ’以列單位來將 線依次掃圹糾々 f源掃“(驅動掃描器)5係配合 付:Μ ’對各供電線DS供給於第-電位Vcc與第二電 ❹ ❹ 線:=電_。信號驅動器(水平選擇器⑽配合 :可田’對仃狀之信號線SL供給成為影像信號之,號 電位Vsig及基準電位v〇fs。 观之L唬 於該結構,取樣用雷Β τ 7❹ g=(Cl + Cgs)/(Cl+Cgs+Cel) (2) In this state, if the gate-source voltage Vgs of the driving transistor 12 is greater than its threshold power MVth, as shown in Fig. 4-6 It shows that there is current flowing from the power supply. In other words, the values of Vofs and Vss must be set so that the % at this time is greater than the threshold voltage of the driving transistor T2. As described above, since the equivalent circuit of the illuminating element is represented by a diode and a capacitor, the driving is performed as long as _Vcat+Vthel (the leakage current of the light-emitting element EL is much smaller than the current flowing through the driving transistor T2) The current of the transistor T2 is used to charge C1 and Cel. At this time, ... the system rises with time as shown in Figure 4_7. The sampling transistor T1 is turned off during the subsequent standby period (8)' before the signal voltage is changed from Vofs to Vsig. At this time, since the voltage between the source and the source T of the driving transistor is larger than Vth, a current flows as shown in Fig. 4-8, and the polarity and the source electric history of the driving transistor T2 rise. At this time, since the light-emitting element EL is reversely biased, the light-emitting element EL does not emit light. After the limit value/shaw operation is completed, the sampling transistor T1 is turned off. Next *; Write period (9) When the 'spot line potential becomes Vsig', turn it on again. 133422.doc -21 · 200935384 Sample transistor τ1 (Fig. 4_9) e Vsig becomes the voltage corresponding to the gray scale. The gate potential of the driving transistor Τ2 is Vslg' in order to turn on the sampling transistor. However, since a current flows from the power source, the source potential rises with time. At this time, if the source voltage of the driving transistor T2 does not exceed the sum of the threshold voltage Vthel of the light-emitting element EL and the cathode voltage Vcat (the leakage current of the light-emitting element is less than the current flowing through the driving transistor 2) Then, the current of the driving transistor T2 is used to charge c丨 and Cel. At this time, since the threshold correction operation of the driving transistor T2 is completed, the current flowing through the driving transistor T2 reflects the mobility ^. Specifically, the large mobility rate is large at this time, and the rise in the source is also early. Conversely, if the migration rate is small, the amount of current is small, and the rise of the source is also slow (Fig. 4_丨0). Thereby, the voltage between the gate and the source of the driving transistor T2 reflects the mobility and becomes small, and after a certain period of time, the Vgs of the corrected mobility is completed. At the end, the sampling transistor T1 is turned off, and when the writing is completed and the light emitting period (11)' is turned on, the light-emitting element EL is caused to emit light. Since the voltage between the gate and the source of the driving transistor T2 is constant, the driving transistor 2 flows a constant current Ids' to the light-emitting element EL, and the current of Vel rises to Ids' flows to the voltage of the light-emitting element EL. The light-emitting element EL emits light (Fig. 4-11). In the present circuit, if the light-emitting element EL has a long light-emitting time, its I-V characteristic changes. Therefore, the potential at point B in the figure also changes. However, since the voltage between the gate and the source of the driving transistor T2 is maintained at a constant value, the current flowing through the light-emitting element EL does not change. Therefore, even if the I-V characteristic of the light-emitting element EL is deteriorated, a constant current Ids continues to flow, and the luminance of the light-emitting element EL does not change. 133422.doc • 22- 200935384 Here, consider the driving system of this pixel circuit as shown above, taking the driving sequence of Figure 3'1, but changing the power line from Vss to v" to the threshold. The time for correcting the action is different between the lines of the power line as the common line. Specifically, the power line is at the potential of Vee compared to the Nth segment and the N+1th segment. The time is higher than [therefore, by the leakage current of the driving transistor and the leakage current of the light-emitting element, the source of the f-crystal is driven to rise in the nth step of the N+mt匕. ❹ Basically, Before the limit correction operation, even if the source voltage of the drive 胄 crystal is different, if the (4) source-to-source voltage Vgs of the drive transistor is greater than the threshold voltage vth during the threshold correction operation, the normal operation can be performed. I value correction operation. However, the brightness of the light is determined by the source voltage of the driving transistor before the threshold correction operation. Therefore, in the present driving, the final segment and the next segment of the power line are common. Figure 3" is the third and fourth paragraphs) When the drive source for the threshold voltage correction e electricity crystal abruptly changes (from the first segment to the third segment vary based gently). As shown in Fig. 5, the screen of the display device is caused by the unevenness of the stripes, such as the period of the complex line (hereinafter referred to as a block) in which the power supply timing is occluded. In addition, the unevenness is more exaggerated in the figure. In order to cope with the above problems, the present invention proposes to reverse the scanning direction of the sampling transistor in the zone dragon between adjacent blocks. Fig. 6 shows an example in which the present invention is applied as an example. This timing chart is basically the same as Fig. 3-1. The difference between the present invention and the case of FIG. 3_! is as follows: the time when the power supply voltage is changed from Vss to Vcc to the threshold correction operation, 133422.doc -23- 200935384 the adjacent line between adjacent blocks is the same The point of output of the signal voltage input to the pixel is opposite to the point between adjacent blocks. ❹ 藉 By using the present invention 'between adjacent lines between adjacent blocks, the time period from the power supply line to Vec to the threshold correction operation can be made the same, and the driving transistor or the light-emitting element EL can be used. The amount of rise in the source voltage of the driving transistor caused by the leakage current or the like is the same. As a result, the unevenness of the streaks between the blocks as seen in Fig. 5 before the handling can be replaced with the unevenness of the shadow as shown in Fig. 7. In addition, in Figures 5 and 7, the shadows are represented more than the actual exaggeration. Generally. The unevenness of the streaks, such as the streaks, between the adjacent blocks is determined by the brightness difference of about 1%, but the unevenness of the change of the shadows cannot be visually recognized by the difference of the degree of the difference of 1%, so by using the present invention , can be obtained unrecognized: evenly uniform enamel. Moreover, by using the present invention, even if the number of lines constituting the block is increased, the unevenness is not recognized. Therefore, the number of blocks constituting the block can be increased as compared with the prior art, and the number of blocks of the panel can be reduced, and the cost can be reduced. . Moreover, the present invention is adopted in such a manner that the scanning direction of the sampling transistor for each adjacent block is reversed. Therefore, in the case where the panel of the gate driver is not built, the unit is preferably a gate driver unit. Fig. 8-1 is a block diagram showing the f-body structure of the second embodiment of the display device of the present invention. As shown, the display device includes a pixel array and a driving unit (3, 4, 5) for driving the same. The pixel array unit includes a scanning line WS of column =, a signal line SL of a line shape, a pixel 2 arranged in a matrix of the intersection of the two, and a squadron. The electric circuit corresponding to each column of each pixel 2 is arranged: the power supply line I driving unit (3, 4, 5) includes: a control scanner (write scanner) 4' which sequentially supplies control to each of the lines ts Signal, 133422.doc •24- 200935384 The pixels 2^ are scanned in line by line; the power scanner (drive scanner) 5, which is matched with the line, sweeps #, and supplies the supply lines first. The power supply voltage for switching between the potential and the second potential, and the signal driver (horizontal selector) 3 are sequentially scanned in accordance with the line, and the signal line of the line signal is applied to the signal potential and the reference potential of the image signal. Further, the write scanner 4 operates in response to a clock signal supplied from the outside, and transmits a start pulse WSsp which is also supplied from the outside, thereby outputting a control signal to each of the scan lines ws. The drive scanner 5 operates in response to a clock signal supplied from the outside, and sequentially transmits a start pulse DSsp which is also supplied from the outside, thereby sequentially switching the potential of the power supply line Ds in a line. The difference from the first embodiment shown in FIG. 1 is that 'the supply line DS is not common in block units. VIII%. FIG. 8-2 shows the pixel 2 included in the display device shown in FIG. 8. A circuit diagram of the specific structure. As shown in the figure, the present pixel circuit 2 is a two-terminal type (diode type) light-emitting element represented by an organic EL device or the like, and an n-channel type sampling electrical body T1, which is driven by the same Nit type. The transistor T2 and the thin capacitor type holding capacitor C1 are formed. The sampling transistor T1 is connected to the scan as the idle terminal of the control terminal, and the source and the terminal of the pair of current terminals are connected to the S signal line SL, and the other is connected to the driving electron crystal (4): Extremely G. The driving transistor T2 is connected to the power supply line DS by connecting one of the source and the drain to the I-light 7L EL'. The driving electric power body T2 of this type is an N-channel type 'the non-polar side of the current terminal of which is connected to the power supply line DS' as the source of the other single-side current terminal is connected to the light-emitting element EL The anode is opposite. The cathode of the @lateral light-emitting element EL is fixed to a specific cathode 133422.doc -25- 200935384 potential Vcat. The holding capacitor (4) is connected to the source S of the body terminal and the current as the (4) di "" (4) electric positive body T2 is the gate of the control terminal Gr [for the package = manufacturing scanner (write scanner) 4 system will scan冓; between the potential and the potential, according to the low pixel 2, the line is scanned sequentially. The electric ^ ' in the column unit to sweep the line in turn 圹 々 f source sweep " (drive scanner) 5 series with the payment: Μ 'The power supply line DS is supplied to the first potential Vcc and the second power ❹ 线: = electric_. The signal driver (horizontal selector (10) is matched with: Ketian') supplies the image signal SL to the signal line SL, the potential Vsig and the reference potential v〇fs. In this structure, the sampling thunder τ 7
Vf U 用電曰曰體T1係於影像信號從基準電位 二=rvsig之第一時序後,在從控制信號上 (:第1:時 保持電容C1於; 取樣信號電位Vsigit寫入於 口電令C1。此時’同時將流於驅動用電晶體T2之電 回授至保持電容C1,於寫入於徂 負 以科Μ & 以於保持電容Ci之信號電位加 2於驅動用電晶體了2之遷移^之修正。 時:之取樣期間亦成為,將流於咖 T2之電、“回授至保持電容。之遷移率修正期間。 亦ΙΓΓ示之像素電路除了上述遷移率修正功能以外, Μ传臨限電壓修正功能。亦即,電源掃描器(驅動掃插 於取樣用電晶體们取樣信號電位\前,於第—時 供電線職第—電位vcc切換為第二電位^控 描益(寫入掃描器)4係同樣於取樣用電晶㈣取樣 w電位vsig前’於第二時序使取樣用電晶體T1導通從 133422.doc •26· 200935384 L號線SL ’將基準電位純施加於驅動用I晶體η之間極 ^並且將驅動用電晶體Τ2之源極s設定為第二電位Vsse 電源掃描器(驅動掃描器)5係於第二時序後之第三時序 :電細從第二電位Vss切換為第一電位〜,於保持電 各C 1預先保持相當於驅動用電晶體Τ2之臨限電塵心之電 壓。藉由該臨限電壓修正功能,本顯示裝置可取消於每像 素偏差之驅動用電晶體T2之臨限電壓vth之影響。此外, 不問第一時序及第二時序之前後。 圖8-2所示之像素電路2亦進一步具備自舉啟動功能。亦 即,寫入掃描器4係於保持電容⑽持有信號電位之 時點,使取樣用電晶體TW為非導通狀態,將驅動用電晶 體T2之閘極G從信號線儿電性地切離,從而閑極電位連動Vf U is used to charge the image signal from the reference potential two = rvsig after the first timing, on the slave control signal (: 1: when the capacitor C1 is held; the sample signal potential Vsigit is written to the port Let C1. At this time, 'the electric current flowing through the driving transistor T2 is simultaneously fed back to the holding capacitor C1, and is written in the negative voltage to the voltage & the signal potential of the holding capacitor Ci is added to the driving transistor. The correction of the migration of 2 is also performed. The sampling period of the time is also the flow of the T2, "return to the retention capacitor. The mobility correction period. The pixel circuit also shown in addition to the above mobility correction function. , Μ 临 临 临 电压 电压 电压 电压 电压 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 临 电源 临 电源 电源 电源 电源 电源 电源 电源 电源 电源 电源The benefit (write scanner) 4 is also the same as the sampled electric crystal (4) before sampling the w potential vsig 'in the second timing to make the sampling transistor T1 turn on from 133422.doc •26· 200935384 L line SL 'pure the reference potential pure Applied to the driver I crystal η between the poles and will drive The source s of the transistor Τ2 is set to the second potential Vsse. The power scanner (drive scanner) 5 is connected to the third timing after the second timing: the electric fine is switched from the second potential Vss to the first potential 〜, to maintain the electricity. Each C 1 maintains a voltage corresponding to the threshold voltage of the driving transistor Τ2 in advance. With the threshold voltage correction function, the display device can cancel the threshold voltage vth of the driving transistor T2 with a deviation per pixel. In addition, the first and second timings are not required. The pixel circuit 2 shown in Fig. 8-2 further has a bootstrap start function, that is, the write scanner 4 is held by the holding capacitor (10). At the time of the signal potential, the sampling transistor TW is in a non-conducting state, and the gate G of the driving transistor T2 is electrically disconnected from the signal line, thereby cooperating with the idle potential
於驅動用電晶體T2之源極電位之變動,將問極G與源極S 間之電壓Vgs維持於一定。即使發光元件EL之電流/電㈣ ❹ 性經時變動’仍可將閘極㈣Vgs維持於一定,不會產生 亮度變化。 圖9係供圖8·2所示之像素之動作說明之時序圖。該時序 圖係以時間轴為共通而表示掃描線WS之電位變化、供電 線(電源線)DS之電位變化、信號線SL之電位變化。掃描線 WS之電位變化係表示控制信號,其進行取樣用電晶㈣ 之開閉控制。供電線DS之電位變化係表示電帽ν“, VSS之切換。而且’信號線儿之電位變化係表示輸入信號 之信號電位Vsig與基準電位杨之切換。而且,與該等電 位變化並行地亦表示驅動用電晶體T2之間極G及源極& 133422.doc 27- 200935384 電位變化。如前述,閘極G與源極s之電位差為YU。 該時序圖係配合像素之動作轉移,簡便地將期間分割為 (1)〜(7)。於即將進入該當圖場(fieid)前之期間(!),發光= 件EL處於發光狀態。其後,進入線依次掃描之新圖場,= 先於最初之期間(2),將供電線DS從第一電位Vcc切換為$ 二電位Vss。進入下一期間(3)’將輸入信號從…切換為 Vofs。進-步於下-期間⑷,開啟取樣用電晶體τι。於該 ❹ 期間⑺〜(4),將驅動用電晶體T2之閘極電壓及源極電壓= 以初始化。該期間(2)〜(4)係臨限電壓修正用之準備期門 驅動用電晶㈣之閘極«初始化為VGfs,iM^ 極S被初始化為Vss。接下來,於臨限值修正期間(5),實 際進行臨限電壓修正動作,於驅動用電晶體Τ2之閘極〇與 源極s間,保持相當於臨限電壓Vth之電壓。實際上相者^ Vth之電壓係寫入於連接在驅動用電晶體丁2之閘極〇與 極S間之保持電容C1。 …’、 ❹此外’於圖9所示之實施例中’臨限值修正期間⑺係分 為3次,以時間分割式地進行臨限電壓修正動作。於各= 限電壓修正期間(5)間插入有待機期間(5a)。藉由如此分割 •臨限電壓修正期間(5) ’重複複數次臨限電壓修正動作:二 便於保持電容ci寫入相當於Vth之電壓。但本發明不限於 此,亦能以1次臨限電壓修正期間(5)來進行修正動作。、: 其後’前進至寫入動作期間/遷移率修正期間⑹。於 此’影像信號之信號電位Vsigl以加在亀之形式寫入於 保持電容C1 ’並且遷移率修正用之電壓Δν係從保持於保 133422.doc -28. 200935384 持電容c 1之電壓減去。於該寫入期間/遷移率修正期間 (6) ’於信號線SL處於信號電位Vsig之時間帶,必須使取 樣用電晶體T1成為導通狀態。其後,前進至發光期間 (7) ,發光元件係以因應信號電位Vsig之亮度發光。屆時, 由於信號電位Vsig係藉由相當於臨限電壓Vth之電壓及遷 移率修正用之電壓Δν來調整,因此發光元件ELi發光亮 度不會受到驅動用電晶體T2之臨限電壓Vth或遷移率μ之偏 差影響。此外,於發光期間(7)之最初進行自舉啟動動作, 在將驅動用電晶體Τ2之閘極G/源極S間電壓Vgs維持於一定 之狀態下’驅動用電晶體T2之閘極電位及源極電位上升。 接著,參考圖1〇_1〜圖12,來詳細說明圖8_2所示之像素 電路之動作。首先,如圖1 〇_ 1所示,於發光期間(丨),電源 電位e又疋為V C C ’取樣用電晶體Τ 1關閉。此時,駆動用電 晶體Τ2係設定為在飽和區域進行動作,因此流於發光元件 EL之驅動電流ids係因應施加於驅動用電晶體Τ2之閘極g/ 源極S間之電壓Vgs而取定以前述電晶體特性式所示之值。 接下來’若如圖10-2所示進入準備期間(2)、(3),則將 供電線(電源線)之電位設為Vss。此時,Vss設定為小於發 光元件EL之臨限電壓Vthe丨與陰極電壓Vcat之和。亦即, Vss < Vthel+Vcat ’因此發光元件EL熄燈,電源線側成為 驅動用電晶體T2之源極。此時,發光元件EL之陽極充電 至 Vss。 進一步若如圖10-3所示進入下一準備期間(4),信號線 SL之電位成為Vofs ’另一方面,取樣用電晶體丁丨開啟,將 133422.doc -29- 200935384 驅動用電晶體T2之閘極電位設為Vofs。如此將發光時之驅 動用電晶體T2之源極S及閘極G初始化,此時之閘極源極 間電壓Vgs成為Vofs-Vss之值。Vgs=Vofs-Vss係設定為大於 驅動用電晶體T2之臨限電壓vth之值。如此,藉由將驅動 用電晶體T2予以初始化而成為vgs > vth,以完成接著而來 之臨限電壓修正動作之準備。 接下來,若如圖10-4所示前進至臨限電壓修正期間(5), ❹ 則供電線DS(電源線)之電位回到Vcc。藉由使電源電壓成 為Vcc,發光元件EL之陽極成為驅動用電晶體T2之源極 S ’如圖示流有電流。此時,發光元件el之等價電路係如 圖示,以二極體Tel與電容Cel之並聯連接來表示。由於陽 極電位(亦即源極電位Vss)低於Vcat+Vthel,因此二極體 Tel處於關閉狀態,流於該處之漏洩電流甚小於流於驅動 用電晶體T2之電流。故,流於驅動用電晶體T2之電流係大 部分為了將保持電容C1及等價電容Cei充電而使用。 ❹ 圖10-5係表示圖10_4所示之臨限電壓修正期間(5)之驅動 用電晶體T2之源極電壓之時間變化。如圖示,驅動用電晶 體T2之源極電壓(亦即發光元件EL之陽極電壓)係隨著時間 從Vss上升。若經過臨限電壓修正期間(5),驅動用電晶體 T2切斷,其源極8與閘極〇間之電壓Vgs成為。此時, 源極電位係以Vofs-Vth來給予。該值v〇fs_Vth若依然低於 VCat+Vthel,則發光元件EL·處於遮斷狀態。 如圖10-5之曲線圖所示,驅動用電晶體丁2之源極電壓隨 者時間上升。然而’於本例’在驅動用電晶體12之源極電 133422.doc •30- 200935384 壓達到VofS-Vth前,第一次臨限電壓修正期間⑺結束,因 此取樣用電晶體71關閉,進入待機期間(5a^圖丨丨丨係表 不該待機期間(5a)之像素電路之狀態。於該第一次待機期 間(5a),驅動用電晶體T2之閘極G/源極s間電壓vgs依然大 於Vth,因此如圖示,電流從電源Vcc通過驅動用電晶體丁2 而流至保持電容以。藉此,驅動用電晶體丁2之源極電壓上 升,但由於取樣用電晶體丁丨關閉,閘極G處於高阻抗,因 ❹ 此閘極G之電位亦配合源極S之電位上升而上升。亦即,於 該第一次待機期間(5a),因自舉啟動動作,驅動用電晶體 T2之源極電位及汲極電位均上升。此時,由於逆偏壓持續 加在發光元件EL,因此發光元件EL不會發光。 其後,經過1H,信號線SL之電位再度成為v〇fs時,開啟 取樣用電晶體T1,開始第二次臨限電壓修正動作。其後, 若經過第二次臨限電壓修正期間(5),則移至第二次待機期 間(5a)。如此,藉由重複臨限電壓修正期間(5)及待機期間 φ (5a) ’最後驅動用電晶體丁2之閘極G/源極S間電麼達到相 當於Vth之電壓。此時,驅動用電晶體T2之源極電位為 Vofs-Vth,其小於Vcat+Vthel。 接著’若如圖11 -2所示進入信號寫入期間/遷移率修正期 間(6) ’則將信號線SL之電位從Vofs切換為Vsig後,開啟取 樣用電晶體T1。此時’信號電位V s i g成為因應灰階之電 壓。驅動用電晶體T2之閘極電位係為了開啟取樣用電晶體 T1而成為Vsig。另一方面,源極電位係由於從電源Vcc流 有電流,因此隨著時間上升。於該時點,若驅動用電晶體 133422.doc -31- 200935384 T2之源極電位未超過發光元件EL之臨限電壓vthei與陰極 電壓Vcat之和,則從驅動用電晶體T2所流之電流專門使用 於等價電容Cel及保持電容C1之充電。此時,由於驅動用 電晶體T2之臨限電壓修正動作既已完成,因此驅動用電晶 體T2所流之電流反映遷移率μ。具體而言,遷移^大之驅 動用電晶體Τ2在此時之電流量大,源極之電位上升份 亦大。相反地,遷移率μ小之情況下,驅動用電晶體72之 φ 電流量小,源極之上升份變小。藉由該動作,驅動用 電晶體Τ2之閘極電壓Vgs係反映遷移率μ而僅壓縮么^^,於 遷移率修正期間(6)完成之時點,獲得已完全修正遷移率μ 之 Vgs。 圖11-3係表示上述遷移率修正期間(6)之驅動用電晶體丁2 之源極電壓之時間性變化之曲線圖。如圖示,若驅動用電 晶體T2之遷移率大,則源極電壓快速上升’ Vgs僅因其而 被壓縮。亦即,若遷移率μ大,則壓縮Vgs以抵銷其影響, 〇 可抑制驅動電流。另一方面,遷移率μ小之情況下,驅動 用電晶體Τ2之源極電壓並未那麼快速上升,因此Vgs亦未 受到強烈壓縮。因此’遷移率μ小之情況下,驅動用電晶 體之Vgs係為了補償小驅動能力而未加以甚大之壓縮。 圖12係表示發光期間(7)之動作狀態。於該發光期間(?) 關閉取樣用電晶體T1,使發光元件EL發光。驅動用電晶 體T2之閘極源極間電壓Vgs保持於一定,驅動用電晶體T2 係按照刖述特性式,將一定電流Ids’流於發光元件EL。發 光元件EL之陽極電壓(亦即驅動用電晶體T2之源極電壓)係 133422.doc 32- 200935384 由於發光元件EL流有Idsf之電流,因此上升至VX,於超過 Vcat+Vthel之時點,發光元件EL發光。發光元件EL若發光 時間變長,則其電流/電壓特性變化。因此,圖丨1 _3所示之 源極S之電位變化。然而,驅動用電晶體T2之閘極源極間 電壓Vgs係藉由自舉啟動動作保持於一定值,因此流於發 光元件EL之電流ids’不變化。故,即使發光元件EL之電流/ ❿The voltage Vgs between the source G and the source S is maintained constant in the fluctuation of the source potential of the driving transistor T2. Even if the current/electricity (four) 发光 of the light-emitting element EL fluctuates over time, the gate (four) Vgs can be maintained constant, and no change in luminance occurs. Fig. 9 is a timing chart for explaining the operation of the pixel shown in Fig. 8.2. This timing chart shows the potential change of the scanning line WS, the potential change of the power supply line (power supply line) DS, and the potential change of the signal line SL by the common time axis. The potential change of the scanning line WS indicates a control signal for performing opening and closing control of the sampling electron cell (4). The potential change of the power supply line DS indicates the switching of the electric cap ν ", VSS. Moreover, the change in the potential of the signal line indicates the switching of the signal potential Vsig of the input signal and the reference potential Yang. Moreover, in parallel with the potential change It indicates the potential change between the driving transistor T2 and the source & 133422.doc 27- 200935384. As described above, the potential difference between the gate G and the source s is YU. This timing chart is suitable for the movement of the pixel. The period is divided into (1) ~ (7). During the period (!) before entering the field (fieid), the light = EL is in a light-emitting state. Thereafter, the new line of the line is scanned in sequence, = Prior to the initial period (2), the power supply line DS is switched from the first potential Vcc to the second potential Vss. The next period (3) 'switches the input signal from ... to Vofs. Steps to the next-period (4) Turn on the sampling transistor τι. During the ❹ period (7) to (4), the gate voltage and the source voltage of the driving transistor T2 are initialized. The period (2) to (4) is the threshold voltage correction. Use the gate of the preparatory gate drive transistor (4) «Initialize to VGfs, iM^ S is initialized to Vss. Next, during the threshold correction period (5), the threshold voltage correction operation is actually performed to maintain the threshold voltage Vth between the gate 〇 and the source s of the driving transistor Τ2. The voltage of the voltage V is actually written to the holding capacitor C1 connected between the gate 极 and the pole S of the driving transistor D. . . . , ❹ In addition, the embodiment shown in FIG. The middle limit period correction period (7) is divided into three times, and the threshold voltage correction operation is performed in a time division manner. A standby period (5a) is inserted between each of the limit voltage correction periods (5). Threshold voltage correction period (5) 'Repeated multiple threshold voltage correction operation: Second, it is convenient to keep the capacitance ci write voltage equivalent to Vth. However, the present invention is not limited thereto, and can also be used for one threshold voltage correction period (5) Then, the correction operation is performed. Then: "Advance to the write operation period/mobility correction period (6). Here, the signal potential Vsigl of the image signal is written in the form of 亀 to the holding capacitor C1' and the mobility correction is performed. The voltage Δν used is maintained from the guarantee 13342 2.doc -28. 200935384 The voltage of the capacitor c 1 is subtracted. During the writing period/mobility correction period (6) 'In the time zone where the signal line SL is at the signal potential Vsig, the sampling transistor T1 must be made Then, the light-emitting element emits light at a luminance corresponding to the signal potential Vsig. At this time, the signal potential Vsig is a voltage for correcting the voltage and the mobility corresponding to the threshold voltage Vth. Since Δν is adjusted, the light-emitting element ELi light-emitting luminance is not affected by the deviation of the threshold voltage Vth or the mobility μ of the driving transistor T2. In addition, the bootstrap start operation is performed at the beginning of the light-emitting period (7), and the gate potential of the driving transistor T2 is maintained while the voltage Ggs between the gate G and the source S of the driving transistor Τ2 is maintained constant. And the source potential rises. Next, the operation of the pixel circuit shown in Fig. 8_2 will be described in detail with reference to Figs. 1 to 11 to Fig. 12. First, as shown in Fig. 1 〇_1, during the light-emitting period (丨), the power supply potential e is again turned to V C C 'the sampling transistor Τ 1 is turned off. At this time, since the oscillation transistor 2 is set to operate in the saturation region, the driving current ids flowing through the light-emitting element EL is determined in accordance with the voltage Vgs applied between the gate g/source S of the driving transistor Τ2. The value shown by the aforementioned transistor characteristic formula is determined. Next, if the preparation periods (2) and (3) are entered as shown in Fig. 10-2, the potential of the power supply line (power supply line) is set to Vss. At this time, Vss is set to be smaller than the sum of the threshold voltage Vthe丨 of the light-emitting element EL and the cathode voltage Vcat. That is, Vss < Vthel + Vcat ', therefore, the light-emitting element EL is turned off, and the power supply line side becomes the source of the driving transistor T2. At this time, the anode of the light-emitting element EL is charged to Vss. Further, if the next preparation period (4) is entered as shown in Fig. 10-3, the potential of the signal line SL becomes Vofs. On the other hand, the sampling transistor is turned on, and the 133422.doc -29-200935384 driving transistor is turned on. The gate potential of T2 is set to Vofs. Thus, the source S and the gate G of the driving transistor T2 at the time of light emission are initialized, and at this time, the gate-to-source voltage Vgs becomes a value of Vofs - Vss. Vgs = Vofs - Vss is set to be larger than the threshold voltage vth of the driving transistor T2. Thus, the drive transistor T2 is initialized to become vgs > vth to complete the preparation of the subsequent threshold voltage correcting operation. Next, if it is advanced to the threshold voltage correction period (5) as shown in Fig. 10-4, 电位 the potential of the power supply line DS (power supply line) returns to Vcc. By setting the power supply voltage to Vcc, the anode of the light-emitting element EL becomes the source S' of the driving transistor T2, and a current flows as shown. At this time, the equivalent circuit of the light-emitting element el is shown as a parallel connection between the diode Tel and the capacitor Cel as shown. Since the anode potential (i.e., the source potential Vss) is lower than Vcat + Vthel, the diode Tel is in a closed state, and the leakage current flowing there is much smaller than the current flowing through the driving transistor T2. Therefore, most of the current flowing through the driving transistor T2 is used to charge the holding capacitor C1 and the equivalent capacitor Cei. ❹ Fig. 10-5 shows the time variation of the source voltage of the driving transistor T2 during the threshold voltage correction period (5) shown in Fig. 10-4. As shown, the source voltage of the driving transistor T2 (i.e., the anode voltage of the light-emitting element EL) rises from Vss with time. When the threshold voltage correction period (5) is passed, the driving transistor T2 is turned off, and the voltage Vgs between the source 8 and the gate 成为 becomes. At this time, the source potential is given by Vofs-Vth. If the value v〇fs_Vth is still lower than VCat+Vthel, the light-emitting element EL· is in an off state. As shown in the graph of Figure 10-5, the source voltage of the driving transistor D 2 rises with time. However, in the present example, before the source voltage of the driving transistor 12 is 133422.doc • 30- 200935384, the first threshold voltage correction period (7) is ended before the voltage reaches VofS-Vth, so the sampling transistor 71 is turned off and enters. During the standby period (5a), the state of the pixel circuit in the standby period (5a) is not shown. During the first standby period (5a), the gate G/source s voltage of the driving transistor T2 is set. Vgs is still larger than Vth, so as shown, the current flows from the power supply Vcc through the driving transistor D2 to the holding capacitor. Thereby, the source voltage of the driving transistor D2 rises, but due to the sampling transistor丨 is turned off, the gate G is at a high impedance, because the potential of the gate G also rises in accordance with the rise of the potential of the source S. That is, during the first standby period (5a), the driver is driven by the bootstrap action. The source potential and the drain potential of the transistor T2 are both increased. At this time, since the reverse bias voltage is continuously applied to the light-emitting element EL, the light-emitting element EL does not emit light. Thereafter, after 1H, the potential of the signal line SL becomes again. When v〇fs, turn on the sampling transistor T1 and start the first The second threshold voltage correction operation. Thereafter, if the second threshold voltage correction period (5) is passed, the second standby period (5a) is moved. Thus, by repeating the threshold voltage correction period (5) And the standby period φ (5a) 'The voltage between the gate G and the source S of the last driving transistor D reaches the voltage corresponding to Vth. At this time, the source potential of the driving transistor T2 is Vofs-Vth, It is smaller than Vcat+Vthel. Next, if the input signal writing period/mobility correction period (6) is shown as shown in Fig. 11-2, the potential of the signal line SL is switched from Vofs to Vsig, and the sampling transistor T1 is turned on. At this time, the signal potential V sig is a voltage corresponding to the gray scale. The gate potential of the driving transistor T2 is Vsig in order to turn on the sampling transistor T1. On the other hand, the source potential is due to flow from the power source Vcc. The current rises with time. At this point, if the source potential of the driving transistor 133422.doc -31- 200935384 T2 does not exceed the sum of the threshold voltage vthei of the light-emitting element EL and the cathode voltage Vcat, the slave drive The current flowing through the transistor T2 is used exclusively for equivalent electricity. The charging of the capacitor Cel and the holding capacitor C1. At this time, since the threshold voltage correcting operation of the driving transistor T2 is completed, the current flowing through the driving transistor T2 reflects the mobility μ. Specifically, the migration is large. The driving transistor Τ2 has a large current amount at this time, and the potential rise portion of the source is also large. Conversely, when the mobility μ is small, the φ current of the driving transistor 72 is small, and the source rises. By this operation, the gate voltage Vgs of the driving transistor Τ2 reflects the mobility μ and is only compressed, and at the time when the mobility correction period (6) is completed, the fully corrected mobility μ is obtained. Vgs. Fig. 11-3 is a graph showing temporal changes in the source voltage of the driving transistor T2 in the mobility correction period (6). As shown, if the mobility of the driving transistor T2 is large, the source voltage rises rapidly, and Vgs is only compressed by it. That is, if the mobility μ is large, the Vgs is compressed to offset the influence, and the drive current can be suppressed. On the other hand, in the case where the mobility μ is small, the source voltage of the driving transistor Τ2 does not rise so fast, and therefore Vgs is not strongly compressed. Therefore, in the case where the mobility μ is small, the Vgs of the driving electric crystal is not greatly compressed in order to compensate for the small driving ability. Fig. 12 is a view showing an operation state of the light-emitting period (7). The sampling transistor T1 is turned off during the light-emitting period (?), and the light-emitting element EL is caused to emit light. The gate-source voltage Vgs of the driving transistor T2 is kept constant, and the driving transistor T2 flows a constant current Ids' to the light-emitting element EL in accordance with the above-described characteristic formula. The anode voltage of the light-emitting element EL (that is, the source voltage of the driving transistor T2) is 133422.doc 32-200935384 Since the light-emitting element EL has a current of Idsf, it rises to VX, and when it exceeds Vcat+Vthel, it emits light. The element EL emits light. When the light-emitting element EL becomes longer in light-emitting time, its current/voltage characteristics change. Therefore, the potential of the source S shown in Fig. 1_3 changes. However, since the gate-source voltage Vgs of the driving transistor T2 is maintained at a constant value by the bootstrap start operation, the current ids' flowing through the light-emitting element EL does not change. Therefore, even the current of the light-emitting element EL / ❿
电壓特性劣化’仍始終流有一定之驅動電流Ids,,發光元 件EL之亮度不會變化。 然而,若顯示裝置之高精細化及高速化進展,則m期間 變紐,該情況亦必須於最後之1H以内完成臨限電壓修正動 作及信號電位寫人動作。屆時,必須考慮輸人信號或控制 信號之暫態(transient)後’於1H以内進行對於信號線之 V〇fs之輸人、臨限電壓修正動作、取樣用電晶體^之關閉 動作、對於信I線SL之信號電位Vsig之輸入、信號電位寫 入動作、取樣用電晶的之關閉動作。然而,實際上若顯 不裝置之高精細化及高速化進展,由於m相當程度被縮短 匕難以於1H以内①成臨限電壓修正動作及信號電位 於 ;發明係為了應付上述問題點而合成複數水平期間, 該合成之期間之一部分,妓 ^刀八通地進行臨限電壓修正動作。 其後,於合成期間之剩餘部分 動作。u 進订信號電位寫入 團j係作為其一例’模式性地表示合 (2H)之情況下之動作次序 千期間 本時序圖之上層表千俞、+、4 為了比較,於 層表不刖逑參考例之動作次序,於下層表示 I33422.doc -33 - 200935384 3位=1^序。於參考狀動作:欠序,輸人信號係以 '备V(^VsiW。於第N線之取樣用電晶體 應脈衝…之控制信號。因 後方偏移,同樣包人=電晶體ti(n)開啟。相位往1h 包3脈衝P〇, Pi,P2之控制信號施加於第 N+1線之取樣用雷曰 > 口 體丁丨⑺十1)。於第一個1H期間,輸入 L號為Vofs時’取樣用電晶體ti(n)係因應控制脈衝Η而The voltage characteristic deterioration 'still always has a certain driving current Ids, and the luminance of the light-emitting element EL does not change. However, if the display device is high-definition and high-speed, the m period will change, and in this case, the threshold voltage correction operation and the signal potential writing operation must be completed within the last 1H. At that time, it is necessary to consider the input of the V〇fs to the signal line within 1H after the transient of the input signal or the control signal, and the closing operation of the sampling transistor ^, for the letter The input of the signal potential Vsig of the I line SL, the signal potential writing operation, and the closing operation of the sampling electron crystal. However, in fact, if the high definition and high speed of the device are not developed, m is considerably shortened, and it is difficult to correct the operation and signal power within 1H. The invention is based on the above-mentioned problem. During the horizontal period, one part of the period of the synthesis is subjected to a threshold voltage correction operation. Thereafter, the remainder of the synthesis period moves. u The order signal is written in the group j as an example of the operation sequence in the case of the mode (2H). The time series on the top of the time chart is in the form of thousands of Yu, +, and 4 for comparison.动作 The order of action of the reference example is shown in the lower layer I33422.doc -33 - 200935384 3-bit=1^. In the reference action: the under-order, the input signal is 'prepared V (^VsiW. The signal for the sampling of the N-th line of the transistor should be pulsed... because of the rear offset, the same package = transistor ti(n ) Turn on. Phase to 1h packet 3 pulses P〇, Pi, P2 control signal applied to the N+1 line sampling thunder > mouth body Ding (7) X1). During the first 1H, when the input L is Vofs, the sampling transistor ti(n) is in response to the control pulse.
開啟’進行臨限電壓修正動作。其後,同樣若於m期間, 輸入信號成為信號電Msigl,則取樣用電晶體T1(N)因應Turn on 'to perform threshold voltage correction action. Thereafter, if the input signal becomes the signal electric Msigl during the m period, the sampling transistor T1(N) responds.
控制脈衝P2而開啟,進行信號電位寫人動作。如此,第N 線之取樣用電晶體T1(N)係於第一個水平期間,完成臨限 電壓修正動作及信號電位寫入動作。此外,此時,下一線 之取樣用電晶體T1(N+1)係因應控制脈衝!>〇而開啟,進行 第一次臨限電壓修正動作。 若别進至第二個水平期間,輸入信號為v〇fs時,第N+】 線之取樣用電晶體T1(N+1)係因應控制脈衝!^而開啟,進 行第二次臨限電壓修正動作。其後,若輸入信號從¥〇&切 換為Vsig2,則取樣用電晶體T1(N+1)因應控制脈衝p2而開 啟’進行信號電位寫入動作。如此,各線之取樣用電晶體 係於1H内進行臨限電壓修正動作及信號電位寫入動作。於 本參考例’由於以1次之臨限電壓修正動作尚未完成修 正,因此分為2次重複進行臨限電壓修正動作。 相對於此,關於本發明之動作次序中,寫入掃描器係配 合分配給複數掃描線(本實施例為2條)之各個之掃描期間 133422.doc -34· 200935384 (1 Η) ’設作為包含第一 _ .外人丄 弟一期間之合成期間。換言 :,t 5成掃描期間相當於2Η。於第-期間,對2條掃描 修正動作。接下來,於第一^賴’―起執行臨限電壓 N+1)佑&終山 、第一’月間,對2條掃描線(線N及線 1)依讀心龍細,财執行㈣電位寫入動作。 :圖不之例中,輸人信號係於相當於合成掃描射㈣之前 + 間為VGfs’於後半之第二期間順序地從The control pulse P2 is turned on to perform a signal potential writing action. In this manner, the sampling transistor T1 (N) of the N-th line is in the first horizontal period, and the threshold voltage correcting operation and the signal potential writing operation are completed. Further, at this time, the sampling transistor T1 (N+1) of the next line is turned on in response to the control pulse !>, and the first threshold voltage correcting operation is performed. If the input signal is v〇fs during the second horizontal period, the sampling transistor T1(N+1) of the N+th line responds to the control pulse! ^ and turn on, for the second threshold voltage correction action. Thereafter, when the input signal is switched from ¥〇& to Vsig2, the sampling transistor T1(N+1) is turned on in response to the control pulse p2 to perform the signal potential writing operation. Thus, the sampling transistors of the respective lines perform the threshold voltage correcting operation and the signal potential writing operation in 1H. In the present reference example, since the correction is not completed by the threshold voltage correction operation once, the threshold voltage correction operation is repeated twice. On the other hand, in the operation sequence of the present invention, the write scanner is configured to match the scanning period 133422.doc -34· 200935384 (1 Η) of each of the plurality of scanning lines (two in the present embodiment). Contains the first _. The period of synthesis of the outsider's brother. In other words: t 5 is equivalent to 2Η during the scanning period. During the first period, correct the action for 2 scans. Next, in the first ^ 赖 'from the implementation of the threshold voltage N + 1) You & the end of the mountain, the first 'month, on the two scan lines (line N and line 1) read the heart of the fine, financial execution (4) Potential write operation. In the example of Fig., the input signal is sequentially from the equivalent of the synthetic scan (4) + between VGfs' and the second half of the second half.
❹ 變化為M2。此時’㈣線之取樣用電晶體τι剛因應 控制信號脈衝P2而開啟取樣Vsigl。接下來,第n+i線之 取樣用電晶體T1(N+1)係因應控制信號脈衝p2而開啟,取 樣 Vsig2。 圖14係表示包含㈣線之電位變化之本發明之動作次序 之全體結構之時序圖。如圖示,於第N線及第n+i線,於 修正準備期間及臨限電壓修正期間施加於取樣用電晶體 TUN),丁 1(N+1)之控制信號波形為共通。另一方面,對於 第N線之像素之信號寫入時間與對於第N +丨線之像素之信 號寫入時間之差為1H以下。進—步而言,電源線⑽成為 VSS之時間(非發光期間開始時序)亦第N線與第N+1線之差 小於1H。於非發光時,將驅動用電晶體之閘極設為v〇fs, 將源極設為Vss後,將電源線從Vss切換為Vcc,進行分割 臨限電壓修正動作。其後,一面進行遷移率修正,一面將 k號電位Vsigl,Vsig2寫入於分別之線之保持電容,使發 光元件EL發光。如以上,於本動作次序,於第二期間,以 小於1掃描期間(1H)之相位差,依次將控制信號輸出至各 133422.doc -35- 200935384 掃描線ws(N,Ν+1)β由於電源掃描器係於第—期間執行臨 限電壓修正動作,因此對於對應於複數條掃描線[(Ν’ N+1)之複數條供電線DS,供給低電位Vss後,一起切換為 高電位VCC。屆時,於第一期間,以小於!掃描期間⑽之 相位差,依次對複數條供電線DS(N,N+1)供給低電位Vss 後’一起切換為高電位Vcc。 ❹ Ο 如以上,於本發日月,以每特定條數區分掃描線予以區塊 化,且合成分配給特定條數之掃描線各個之掃描線,作為 分成第一期間及第二期間之丨合成期間。於圖Μ所示之時 序圖,為了容易理解,以每2條區分掃描線予以區塊化, 且合成分配給2條掃描線之各個之1水平期間(1H),作為分 成第一期間及第二期間之1合成期間(2H)。圖14之時序圖 係表不由第N線之掃描線及第N+1線之掃描線所含之丨區塊 份之動作次序》 圖15 A係表示第N線之像素所含之驅動用電晶體T2之閘 極電位及源極電位之變化之波形圖。對應於閘極G及源極s 之電位波形,亦表示電源線DS之變化、取樣用電晶體τ 1 之控制信號之變化及供給至信號線S L之輸入信號之電位變 化°第N線之像素係因應電源線DS之電位變化或取樣用電 晶體T1之控制信號及輸入信號之變化,於修正準備期間 (4)、臨限值修正期間(5)、信號寫入期間(6)等進行特定動 作0 於準備期間(4),驅動用電晶體T2之閘極G設定為Vofs, 源極S設定為Vss。其後,於第一次臨限電壓修正期間(5) 133422.doc -36- 200935384 及待機期間(5a)後,於第二次臨限電壓修正期間(5),閘極 G與源極S間之電壓Vgs固定在相當於Vth之電壓。 接下來,於轉移期間(5b)後進入信號寫入期間(6),進行❹ Change to M2. At this time, the sampling transistor τι of the '(4) line turns on the sampling Vsigl in response to the control signal pulse P2. Next, the sampling transistor T1(N+1) of the n+ith line is turned on in response to the control signal pulse p2, and Vsig2 is sampled. Fig. 14 is a timing chart showing the overall configuration of the operational sequence of the present invention including the potential change of the (four) line. As shown in the figure, the N-th line and the n+-th line are applied to the sampling transistor TUN during the correction preparation period and the threshold voltage correction period, and the control signal waveforms of D1 (N+1) are common. On the other hand, the difference between the signal writing time for the pixel of the Nth line and the signal writing time for the pixel of the Nth 丨 line is 1H or less. In the case of the step, the time when the power line (10) becomes VSS (the timing at which the non-lighting period starts) is also the difference between the Nth line and the (N+1)th line is less than 1H. In the case of non-light-emitting, the gate of the driving transistor is set to v〇fs, and after the source is set to Vss, the power supply line is switched from Vss to Vcc, and the threshold voltage correction operation is performed. Thereafter, while the mobility correction is performed, the k-th potentials Vsigl and Vsig2 are written in the respective storage lines of the respective lines, and the light-emitting element EL is caused to emit light. As described above, in the present operation sequence, in the second period, the control signals are sequentially output to the respective 133422.doc -35 - 200935384 scanning lines ws(N, Ν +1) β with a phase difference of less than 1 scanning period (1H). Since the power supply scanner performs the threshold voltage correction operation during the first period, the low power potential Vss is supplied to the plurality of power supply lines DS corresponding to the plurality of scanning lines [(Ν'N+1), and is switched to the high potential together. VCC. By then, during the first period, to be less than! The phase difference in the scanning period (10) is sequentially supplied to the high potential Vcc by supplying a low potential Vss to the plurality of power supply lines DS(N, N+1). ❹ Ο As above, in the current day and month, the scan lines are divided into blocks for each specific number of blocks, and the scan lines assigned to the scan lines of a specific number are synthesized as the first period and the second period. During the synthesis. In the timing chart shown in FIG. ,, for the sake of easy understanding, each of the two scanning lines is segmented, and one horizontal period (1H) assigned to each of the two scanning lines is synthesized as the first period and the first period. During the synthesis period of the second period (2H). The timing chart of FIG. 14 is an operation sequence of the block of the block included in the scan line of the Nth line and the scan line of the (N+1)th line. FIG. 15A shows the driving power included in the pixel of the Nth line. Waveform diagram of changes in gate potential and source potential of crystal T2. The potential waveform corresponding to the gate G and the source s also indicates the change of the power supply line DS, the change of the control signal of the sampling transistor τ 1 , and the change of the potential of the input signal supplied to the signal line SL. It is specified in the correction preparation period (4), the threshold correction period (5), and the signal writing period (6) in response to a change in the potential of the power supply line DS or a change in the control signal and the input signal of the sampling transistor T1. Operation 0 During the preparation period (4), the gate G of the driving transistor T2 is set to Vofs, and the source S is set to Vss. Thereafter, after the first threshold voltage correction period (5) 133422.doc -36- 200935384 and the standby period (5a), during the second threshold voltage correction period (5), the gate G and the source S The voltage Vgs is fixed at a voltage equivalent to Vth. Next, after the transition period (5b), the signal writing period (6) is entered.
信號電位Vsigl之寫入動作。於第N線之像素,第二次臨Z t壓修正期間(5)結束至進人信號電位寫人期間⑹之轉移 冑間(5b)非常短。於轉移期間(5b) ’由於驅動用電晶體η 稍微有電流漏洩,因此閘極G及源極s之電位變動。然而, ❹ 由於在第N線之像素,轉移期間(5b)非常短,因此幾乎未 見驅動用電晶體T2之電流漏洩,幾乎未有源極8之電位變 動。 圖15B係表示屬於第N+1線之像素之驅動用電晶體丁之之 閘極G及源極S之電位變化之波形圖。如前述,線n及線 N+1係屬於同一區塊,臨限電壓修正動作係以區塊單位一 次進行,但信號電位寫入動作係於區塊内依次進行。因 此,信號寫入期間(6)係相較於第N線之像素,其第Ν+ι線 ❹ 之像素往後方偏移。故,如圖15B之時序圖所示,介在從 第二次臨限電壓修正期間(5)至信號電位寫入期間(6)間之 轉移期間(5b)係相較於第轉之像素,其第叫線之像素變 長。因此,強烈受到驅動用電晶體T2之電流漏洩之影響, 驅動用電晶體Τ2之閘極〇及源極3之電位係如以點線之圓 圈圍起般上升 '特別由於源極s之電位上升,閘極電位〇上 升。因此,寫入於保持電容c丨之信號電位之動態範圍變 小,第N+1線之像素未能取得所需亮度,亮度比第n線之 像素降低。 133422.doc -37- 200935384 若由N線及Ν+l線所含之區塊之動作結束,並前進至下 一區塊,則對於N+2線及N+3線之動作係糾線及_線之 動作同樣地重複。亦即,N+2線之像素之轉移期間短,於 ㈣線之像素,從臨限電屋修正期間至信號寫入期間之間 之轉移期間變長。於相鄰區塊間互相鄰接之㈣線,轉移 期間長,於N+2線,轉移期間短。因此,由於轉移期間在 區塊之交界大幅不同,因此亮度不均係明確顯現。Write operation of signal potential Vsigl. In the pixel of the Nth line, the transition from the end of the second Zt pressure correction period (5) to the entry of the input signal potential period (6) is very short. In the transition period (5b)', since the driving transistor η has a slight current leakage, the potentials of the gate G and the source s fluctuate. However, since the transfer period (5b) is very short in the pixel of the Nth line, almost no current leakage of the driving transistor T2 is observed, and the potential of the source electrode 8 is hardly changed. Fig. 15B is a waveform diagram showing potential changes of the gate G and the source S of the driving transistor of the pixel belonging to the (N+1)th line. As described above, the line n and the line N+1 belong to the same block, and the threshold voltage correction operation is performed once in the block unit, but the signal potential writing operation is sequentially performed in the block. Therefore, the signal writing period (6) is shifted from the pixel of the Nth line to the pixel of the Nth line. Therefore, as shown in the timing chart of FIG. 15B, the transition period (5b) from the second threshold voltage correction period (5) to the signal potential writing period (6) is compared with the first-turn pixel. The pixels of the first line become longer. Therefore, it is strongly affected by the current leakage of the driving transistor T2, and the potential of the gate 〇 and the source 3 of the driving transistor Τ2 rises as if surrounded by a circle of a dotted line, especially because the potential of the source s rises. The gate potential rises. Therefore, the dynamic range of the signal potential written in the holding capacitor c丨 becomes small, the pixels on the (N+1)th line fail to obtain the desired luminance, and the luminance is lower than the pixel on the nth line. 133422.doc -37- 200935384 If the operation of the block contained in the N line and the Ν+1 line ends and proceeds to the next block, the action lines for the N+2 line and the N+3 line are corrected. The action of the _ line is repeated as well. That is, the transition period of the pixels of the N+2 line is short, and the period of the transition from the threshold electric house correction period to the signal writing period becomes longer in the pixels of the (four) line. The (four) line adjacent to each other between adjacent blocks has a long transition period and is short on the N+2 line. Therefore, since the boundary between the blocks is greatly different during the transition, the brightness unevenness is clearly manifested.
本發明係、為了應付上述_點,於相㈣塊間,對各掃 描線依次輸出控制信號,使進行線依次掃描之方向互相相 反。藉此,於相鄰區塊間屬於互相相鄰之線之像素係完成 臨限電壓修正動作至進入信號電位寫入動作之轉移時間相 同。藉此,於相鄰區塊之交界互相相鄰之丨對線間,不會 出現亮度差異’可獲得不均不明顯之顯示。 圖Μ係表示本發明之動作次序之時序圖。本實施型態 係作為叫列,將2條掃描線作為!區塊,將2水平期間㈣ 作為1合成期間之情況。於圖15C之例,將N線及N+1線作 為1區塊,將N+2線及N+3線作為下一區塊。因此,互相相 鄰之區塊之交界為N+1線與N+2線之間。士口時序圖所示, 於互相相鄰區塊間,使信號寫入順序及電源線之電位切換 順序、進一步使信號輸入順序反轉。 *如此’藉由於相鄰區塊,反轉進行信號寫入時之線依次 掃描之方向’於結束臨限值修正動作至進入信號寫入動作 時間係於N+1線與N+2線相同。此外,由於N+1線及 屬於刀別之區塊,因此電源線(N)與電源線(n+2)之 133422.doc -38· 200935384 切換時序之相位差為2H。而且,施加於取樣用電晶體 T1(N+1)及T1(N+2)之控制信號脈衝之相位差亦為丨合成期 間即2H。配合此,輸入信號係以Vsig(N)、Vsig(N+〇、According to the present invention, in order to cope with the above-mentioned points, control signals are sequentially outputted to the respective scanning lines between the phase (four) blocks, so that the directions in which the lines are sequentially scanned are opposite to each other. Thereby, the pixels belonging to mutually adjacent lines between adjacent blocks complete the threshold voltage correcting action until the transition time of the input signal potential writing operation is the same. Thereby, a difference in luminance does not occur between the pairs of adjacent lines adjacent to each other at the boundary between adjacent blocks, and an uneven display is obtained. The diagram shows a timing chart of the sequence of actions of the present invention. This embodiment is called a column, and two scanning lines are used as! For the block, the 2 horizontal period (4) is taken as the case of the 1 synthesis period. In the example of Fig. 15C, the N line and the N+1 line are taken as one block, and the N+2 line and the N+3 line are taken as the next block. Therefore, the boundary between adjacent blocks is between the N+1 line and the N+2 line. As shown in the timing diagram of the Shikou, the signal writing sequence and the potential of the power line are switched between adjacent blocks, and the signal input order is further reversed. *Therefore, 'by the adjacent block, the direction in which the line is sequentially reversed when the signal is written in reverse' is at the end of the threshold correction operation until the entry signal write action time is the same on the N+1 line and the N+2 line. . In addition, since the N+1 line and the block belonging to the tool are different, the phase difference between the power line (N) and the power line (n+2) 133422.doc -38· 200935384 is 2H. Further, the phase difference of the control signal pulses applied to the sampling transistors T1(N+1) and T1(N+2) is also 2H in the 丨 synthesis period. In conjunction with this, the input signal is Vsig(N), Vsig(N+〇,
Vsig(N+3)、Vsig(N+2)之順序變化。總言之,配合區塊間 之線依次掃描之反轉來置換Vsig(N+3)及Vsig(N+2)。The order of Vsig (N+3) and Vsig (N+2) changes. In summary, Vsig(N+3) and Vsig(N+2) are replaced by inversion of the lines between the blocks.
藉由如圖15C之時序圖設定結束臨限電壓修正動作至進 入信號電位寫入動作之轉移時間,可於屬於分別之區塊之 第N+1線之像素及第N+2線之像素間,使驅動用電晶體之 電流漏$量大致相同,於參考例所視認到之第n+i線之像 素與第N+2線之像素間之亮度差變得不明顯。藉此,可庐 得無週期性不均之均句畫質。為了實現該類寫入動作心 號輸出必須於鄰接之合成期間為相反。 圖15D係表示顯示於像素陣列部匕晝面之狀態之模式俯 視圖。該參考例係於像素陣列们形成彻條掃描線_ 線)’此被每100條捆束而分割為4個區塊Βι,B2, B3 B4之 1如前述’臨限電壓修正動作係採區塊依次,每各區塊 _人進订m信號電位寫人動作係於各區塊内線 依次地進行。本參考例係於各區塊⑴〜以,分別使線依次 知描之方向從上往下之情況。換言之即於相鄰區塊間,未 使線依次掃描之方向反轉之情況。 敢初於區塊B 1,一 d?地> # 進仃6»限電壓修正動作,接下來從 上向下進行信號寫入用心 線依-人知^。越往下前進,臨限 電壓修正動作結束至進 進入七唬寫入動作之轉移時間變長, 因此電流漏茂量因其而φ 、 更變大’壳度降低。圖示之晝面係 133422.doc •39- 200935384 於區塊B1内’亮度從上向下些許降低。此係由於隨著轉移 時間變長,電流漏洩增加,亮度降低所致。以下,本說明 書係為了說明方便,重新將轉移時間定譯為漏洩時間。 於下一區塊B2,再度一次進行臨限電壓修正動作後,以 • 線依次掃描進行信號寫入動作。線依次掃描之方向係與區 塊B1相同’區塊B2亦從畫面之上向下。故,於區塊… 内’亮度係從上向下逐漸降低亮度。 φ 於此’若注意區塊B1與區塊B2之交界,則區塊⑴之最 後線之漏戌時間最長。與其相鄰之區塊B2之最初線係漏茂 時間最短。因此’於區塊B1與區塊B2之交界,互相相鄰 之線之漏洩時間差異最大,沿著該交界,產生最大之亮度 差。因此’從全體觀看像素陣列部1之晝面之情況時,如 圖不’以區塊Bl,B2, B3,B4之單位視認到帶狀不均,晝 面之均勻性變差。 圖1 5E係表示按照本發明之動作次序而顯示於像素陣列 φ 部1上之畫面之狀態之模式俯視圖。與圖丨5D相同,像素陣 列部1所含之400條掃描線(4〇〇線)係於4個區塊B1 B2 B4各分為100條。區塊B1之線依次掃描與區塊”之線依次 掃描係方向反轉。同樣地,區塊B2與B3亦線依次掃描之 方向反轉。進一步於B3與B4間,線依次掃描之方向互相 反轉。若注意最初之區塊B1,信號寫入用之線依次掃描係 從上向下進行。因此,區塊B1之最終線之漏洩時間最長, 接下來若為區塊B2,則相反地,線依次掃描係從下向上進 行。故,位於區塊B2之開頭之線係漏洩時間最長。若注竟 133422.doc -40 - 200935384 區塊B1與區塊B2之交界,則互相相鄰之線係漏洩時間最 長’兩者無亮度差。換言之,於區塊B1與區塊B2之交界 未出現亮度差。By setting the end of the threshold voltage correction operation to the transition time of the input signal potential writing operation as shown in the timing chart of FIG. 15C, the pixels of the N+1th line and the N+2 line belonging to the respective blocks can be The current leakage amount of the driving transistor is substantially the same, and the luminance difference between the pixel of the n+ith line and the pixel of the N+2th line which is recognized in the reference example becomes inconspicuous. In this way, the average sentence quality without periodicity can be obtained. In order to achieve this type of write action, the heart rate output must be reversed during the adjacent synthesis period. Fig. 15D is a schematic plan view showing a state of being displayed on the face of the pixel array unit. This reference example is formed in the pixel array to form a complete scan line _ line) 'This is divided into 4 blocks 每ι, B2, B3 B4 every 100 bundles as in the above-mentioned 'limit voltage correction action system mining area In order of the blocks, each block _ person subscribes to the m signal potential writing action in sequence within each block. This reference example is for each block (1) to the case where the lines are sequentially described from the top to the bottom. In other words, it is the case that the direction in which the lines are sequentially scanned is reversed between adjacent blocks. Dare to start at block B 1, a d? ground> #进仃6» limit voltage correction action, then the signal is written from top to bottom and the heart is known. As the process proceeds to the next step, the transition time of the threshold voltage correction operation is increased until the transition time of the seven-inch write operation becomes longer. Therefore, the current leakage amount is increased by φ, and the casing degree is lowered. The face of the figure is 133422.doc •39- 200935384 In block B1, the brightness decreases slightly from top to bottom. This is due to the fact that as the transfer time becomes longer, the current leakage increases and the brightness decreases. Hereinafter, this specification reinterprets the transfer time as a leak time for convenience of explanation. In the next block B2, after the threshold voltage correction operation is performed again, the signal writing operation is sequentially performed by the line scan. The direction in which the lines are sequentially scanned is the same as that of the block B1. The block B2 is also downward from the top of the screen. Therefore, in the block... the brightness system gradually decreases the brightness from the top to the bottom. If φ is the same as the boundary between block B1 and block B2, the last line of block (1) has the longest drain time. The initial line of the adjacent block B2 has the shortest leakage time. Therefore, at the boundary between the block B1 and the block B2, the difference in leakage time between the mutually adjacent lines is the largest, along which the maximum luminance difference is generated. Therefore, when the entire surface of the pixel array unit 1 is viewed from the whole, the band-shaped unevenness is recognized in units of the blocks B1, B2, B3, and B4, and the uniformity of the surface is deteriorated. Fig. 15E is a schematic plan view showing a state of a screen displayed on the pixel array φ portion 1 in accordance with the operation sequence of the present invention. Similarly to Fig. 5D, the 400 scanning lines (4 turns) included in the pixel array unit 1 are divided into four blocks B1 B2 and B4. The line of block B1 sequentially scans the line of the block and sequentially scans the direction of the scanning system. Similarly, the direction in which the blocks B2 and B3 are sequentially scanned is reversed. Further, between B3 and B4, the lines are sequentially scanned in the direction of each other. Invert. If you pay attention to the original block B1, the line for signal writing is sequentially scanned from top to bottom. Therefore, the last line of block B1 has the longest leakage time, and if it is block B2, the opposite is true. The line scan is performed from bottom to top. Therefore, the line at the beginning of block B2 has the longest leak time. If the boundary of block B1 and block B2 is 133422.doc -40 - 200935384, it is adjacent to each other. The line leakage time is the longest 'there is no difference in brightness. In other words, no difference in brightness occurs at the boundary between block B1 and block B2.
择下來,若注意區塊B2之B3交界,區塊B2側之最終線 之漏洩時間最短。區塊B3係與區塊B2相反,從上向下進 行線依次掃描,因此B3之最初線之漏洩時間最短。故,於 區塊B2與區塊B3之交界互相相鄰之線係漏洩時間均最 短’無亮度差。因此,於區塊B2與區塊B3間,無顯著之 亮度不均’可獲得均勻之亮度分布。 關於本發明之顯示裝置係包含如圖丨6所示之薄膜器件結 構。本圖係表示形成於絕緣性基板之像素之模式剖面構 造。如圖示,像素包含:包含複數薄膜電晶體之電晶體部 (於圖中例示1個TFT)、保持電容等電容部及有機EL元件等 發光部。於基板上,以TFT製程形成電晶體部或電 於其上疊層有機EL元件等發光部。於其上經由接著劑黏貼 透明之對向基板以作為平面面板。 關於本發明之顯示裝置係如圖17所示,包含平面型之模 組形狀者。例如於絕緣性基板上設置像素陣列部,其係將 有機心件、薄臈電晶體、薄膜電容等所含之像素呈 狀地積體形成而獲得;圍起該像素陣列部(像素矩陣部)配 置接著劑,黏貼破璃等之對向基板以作為顯示模组。於今 ==基二,因應必要設置_'光器、保護臈、遮: 輸出入γμ之2模組’料用職外部對像素陣列部 連接器,亦可設置例如咖(可撓性印刷電 I33422.doc 200935384 路)。 以上所說明之本發明之顯示裝置包含平面 可適用於將輸入於各種電子機器,例如數位相機、= =:、行動電話、視訊攝影機等電子機器,或於電 機器内產生之影像信號,作為圖像或影像顯示之域 之電子機器之顯示器。以下表㈣用該類顯 機器之例。 衣直之電子Alternatively, if you pay attention to the B3 junction of block B2, the leakage time of the final line on the side of block B2 is the shortest. The block B3 is opposite to the block B2, and the lines are sequentially scanned from the top to the bottom, so that the initial line of B3 has the shortest leak time. Therefore, the line leakage time adjacent to each other at the boundary between the block B2 and the block B3 is the shortest 'no brightness difference. Therefore, there is no significant luminance unevenness between the block B2 and the block B3, and a uniform luminance distribution can be obtained. The display device of the present invention comprises a thin film device structure as shown in Fig. 6. This figure shows a mode cross-sectional structure of a pixel formed on an insulating substrate. As shown in the figure, the pixel includes a transistor portion including a plurality of thin film transistors (one TFT is illustrated in the drawing), a capacitor portion such as a storage capacitor, and a light-emitting portion such as an organic EL element. On the substrate, a transistor portion is formed by a TFT process or a light-emitting portion such as an organic EL element is laminated thereon. The transparent counter substrate is adhered thereto as a flat panel via an adhesive. The display device of the present invention is as shown in Fig. 17, and includes a planar mold group shape. For example, a pixel array portion is provided on an insulating substrate, and a pixel included in an organic core member, a thin germanium transistor, a thin film capacitor, or the like is formed in an integrated manner, and the pixel array portion (pixel matrix portion) is arranged. Then, the opposite substrate is adhered to the opposite substrate as a display module.今今==基二, _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ .doc 200935384 Road). The display device of the present invention described above includes a plane suitable for inputting an image signal input to various electronic devices, such as a digital camera, a ==:, a mobile phone, a video camera, or the like, or an image signal generated in the motor device. A display of an electronic device such as a field of image display. The following table (4) uses the example of this type of machine. Yi Zhizhi Electronics
❹ 適用本發明之電視’包含前面板12、據光器玻璃 所3之影像顯不畫面U,藉由將本發明之顯示裝置用 於其影像顯示畫面11而製作。 圖19係適用本發明之數位相機,上為正面圖,下為背面 圖。該數位相機包含:攝像鏡頭、閃光用之發光部"、顯 不部控制開關、選單„、快門⑺等,藉由將本發明 之顯示裝置用於其顯示部16而製作。 圖20係適用本發明之筆記型個人電腦,於主體2〇包含輸 亡文字等時所操作之鍵盤21,於主體蓋包含顯示圖像之顯 不邛22,藉由將本發明之顯示裝置用於其顯示部。而 作。 圖21係適用本發明之攜帶式終端裝置,左邊表示打開之 狀態,右邊表示閉合之狀態。該攜帶式終端裝置包含:上 側框體23、下側框體24、連結部(於此為合葉部)25、顯示 器26、副顯示器27、閃光燈28、相機29等,藉由將本發明 之顯不裝置用於該顯示器26或副顯示器27而製作。 圖22係適用本發明之視訊攝影機,其包含:主體部3〇、 133422.doc 42- 200935384 朝向前方之側面有被照體攝影用之鏡頭34、攝影時之開始 /停止開關35、監視器36等,藉由將本發明之顯示裝置用 於該監視器36而製作。 【圖式簡單說明】 . 圖1係表示關於本發明之顯示裝置之第-實施型態之全 體區塊圖。 ^ 圖2係表示第—實施型態之電路結構之電路圖。 ❹ 圖3·1係供第-實施型態之動作說明之參考時序圖。 圖3-2係供第一實施型態之動作說明之其他參考時序 圖。 圖4-1係供第—實施型態之動作說明之模式圖。 圖4-2係同樣供第一實施型態之動作說明之模式圖。 圖4-3係供第—實施型態之動作說明之模式圖。 圖4-4係供第一實施型態之動作說明之模式囷。 圖4-5係供第—實施型態之動作說明之模式圖。 〇 圖4-6係供第—實施型態之動作說明之模式圖。 圖4·7係供第一實施型態之動作說明之曲線圖。 圖4-8係供第—實施型態之動作說明之模式圖。 圖4 9係供第一實施型態之動作說明之模式圓。 ’圖4-1〇係供第一實施型態之動作說明之曲線圖。 圖4-11係供第一實施型態之動作說明之模式圓。 圖5係表示顯示裝置之參考例之顯示狀態之模 圖。 圖6係供第—實施型態之動作說明之時序圖。 133422.doc -43- 200935384 圖7係表示關於第一實施型態之顯示 模式俯視圖。 之顯示狀態之 圖8 1係表示關於本發明之顯示裝置之 全體結構之區塊圖。 一實施型態之 例 圖8-2係表示形成於圖μ所示之 之電路圖。 夏之像素之一 圖9係表示圖8_2所示之像素之動作之時 圖1 〇 1係供圖8 - 2所示之像素之動作說明之 圖10-2係同樣供動作說明之模式冑。 、J 。 圖10-3係同樣供動作說明之模式圖。 圖10-4係同樣供動作說明之模式圖。 圖10-5係同樣供動作說明之曲線圖。 圖11-1係同樣供動作說明之模式圖。 圖】】-2係同樣供動作說明之模式圖。 圖11-3係同樣供動作說明之曲線圖。 圖12係同樣供動作說明之模式圖。 圖13係供圖8·2所示之像素之動作說明之時序圖 圖14係表示圖M所示之顯示 圖。 且又駆動方法之時序 二从係同樣供顯示裝置之動作說明之波形圖。 圖15Β係同樣供顯示裝置之動作 ISI 1 S Γ ± - 月之波形圖。 圖15C係表不關於本發明之第 驅動方法之時序圊。 也、之顯不裝置之 圖15D係表示關於參考例 扳置之畫面之模式圓。 133422.doc 200935384 圖 圖15E係表示關於本發明 之顯示裝置之畫面之 明之顯示裝置之器件結構之剖面 圖係表示關於本發 〜且〜笪两心模式圖 圖17係表示關於本發明之 圖。 ’、’不裳置之模組結構之俯視 圖18係表示具備關於本發 體圖。 之顯不裝置之電視組件之立 圖19係表示具備關於本發 干 體圖。 顽不裝置之數位相機之立 型個人電 圖20係表示具備關於本 腦之立體圖。 考“之顯示裝置之筆記 圖21係表示具備關於本明 置之模式圖。 心裝置之攜帶式終端裝 圖22係表示具備關於本發 機之 立體圖。 铸月之顯-裝置之視訊攝影 圖23係表示以往之顯示裝置之_例之電路圖。 圖24係表示以往之顯示裝置之問題點之曲線圖。 圖25係表示以往之顯示裝置之其他例之 。 【主要元件符號說明】 1 2 3 4 5 像素陣列 像素 水平選擇器(信號驅動器) 控制用掃描器 電源掃描器 133422.doc -45· 200935384The television set to which the present invention is applied includes the front panel 12 and the image display screen U of the illuminator glass unit 3, and is produced by using the display device of the present invention on the image display screen 11. Fig. 19 is a view of a digital camera to which the present invention is applied, with a front view and a rear view. The digital camera includes an imaging lens, a light-emitting portion for flash, a display control switch, a menu „, a shutter (7), and the like, which are produced by using the display device of the present invention for the display unit 16 thereof. In the notebook type personal computer of the present invention, the keyboard 21 operated when the main body 2 includes a dead letter or the like is included in the main body cover, and the display device of the present invention is used for the display portion thereof. Fig. 21 is a portable terminal device to which the present invention is applied, with the left side showing the open state and the right side showing the closed state. The portable terminal device includes the upper side frame 23, the lower side frame 24, and the joint portion (in the case of This is a hinge portion 25, a display 26, a sub-display 27, a flash 28, a camera 29, etc., which is produced by using the display device of the present invention for the display 26 or the sub-display 27. Figure 22 is applicable to the present invention. The video camera includes: a main body portion 3A, 133422.doc 42-200935384 a front side facing lens 34 for photographing the subject, a start/stop switch 35 for photographing, a monitor 36, and the like, by the present invention It BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing a first embodiment of a display device according to the present invention. Fig. 2 is a view showing a first embodiment. Circuit diagram of the circuit structure. Fig. 3·1 is a reference timing diagram for the description of the operation of the first embodiment. Fig. 3-2 is another reference timing chart for the description of the operation of the first embodiment. Fig. 4-2 is a schematic diagram for explaining the operation of the first embodiment. Fig. 4-3 is a schematic diagram for explaining the operation of the first embodiment. Fig. 4-4 is a mode diagram for explaining the operation of the first embodiment. Fig. 4-5 is a schematic diagram for explaining the operation of the first embodiment. Fig. 4-6 is for the first embodiment. Fig. 4 is a schematic diagram for explaining the operation of the first embodiment. Fig. 4-8 is a schematic diagram for explaining the operation of the first embodiment. Fig. 4 is a first implementation. The mode circle of the action description of the type. 'Fig. 4-1 shows the curve of the action description for the first embodiment. Figure 4-11 Fig. 5 is a schematic diagram showing a display state of a reference example of the display device. Fig. 6 is a timing chart for explaining the operation of the first embodiment. 133422.doc -43 - 200935384 Fig. 7 is a plan view showing a display mode of the first embodiment. Fig. 8 is a block diagram showing the overall configuration of the display device of the present invention. Fig. 8-2 The circuit diagram shown in Fig. 51 is shown in Fig. 9. One of the pixels of the summer Fig. 9 shows the operation of the pixel shown in Fig. 8_2. Fig. 1 〇1 is a diagram illustrating the operation of the pixel shown in Fig. 8-2. The 10-2 is also used for the mode of action description. , J. Figure 10-3 is a schematic diagram for the same operation description. Figure 10-4 is a schematic diagram for the same operation description. Figure 10-5 is a graph similar to the description of the action. Figure 11-1 is a schematic diagram for the same operation description. Figure]]-2 is also a mode diagram for the description of the action. Figure 11-3 is a graph similar to the description of the action. Fig. 12 is a schematic view similar to the operation description. Fig. 13 is a timing chart for explaining the operation of the pixel shown in Fig. 8.2. Fig. 14 is a view showing the display shown in Fig. M. And the timing of the method is also the waveform diagram of the operation description of the display device. Fig. 15 is also a waveform diagram of the ISI 1 S Γ ± - month for the operation of the display device. Fig. 15C shows the timing of the first driving method of the present invention. Also, the device shown in Fig. 15D shows the mode circle of the screen for the reference example. 133422.doc 200935384 FIG. 15E is a cross-sectional view showing a device structure of a display device for a display device of the present invention. FIG. 17 is a view showing a mode of the present invention. FIG. The top view of the module structure which is not placed is shown in Fig. 18 and is shown in the present invention. The stand of the television component of the display device is shown in Fig. 19, which is a view of the present invention. The stereotype of the digital camera of the digital camera that is not installed is shown as having a perspective view of the brain. The drawing of the display device of the test device is shown in Fig. 21, which is a schematic view of the present invention. The portable terminal device of the heart device is shown in Fig. 22 as a perspective view of the present invention. The video of the casting device is shown in Fig. 23 Fig. 24 is a circuit diagram showing a problem of a conventional display device. Fig. 25 is a view showing another example of a conventional display device. Fig. 25 is a view showing another example of a conventional display device. [Description of main component symbols] 1 2 3 4 5 pixel array pixel level selector (signal driver) control scanner power scanner 133422.doc -45· 200935384
Cl 保持電容 DS 供電線 EL 發光元件 SL 信號線 T1 取樣用電晶體 T2 驅動用電晶體 WS 掃描線 133422.doc -46-Cl holding capacitor DS power supply line EL light-emitting element SL signal line T1 sampling transistor T2 driving transistor WS scanning line 133422.doc -46-
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