KR20220122523A - Manufacturing method of optical device based on atomic layer deposition method - Google Patents

Abstract

The present invention relates to a method for manufacturing an optical element based on atomic layer deposition. The method for manufacturing an optical element according to an embodiment includes steps of: loading a substrate having a plurality of waveguides spaced apart from each other with a predetermined gap into a chamber; and depositing a metal oxide on each of the plurality of waveguides through an atomic layer deposition method, thereby capable of depositing a chemical substance to which the atomic layer deposition method can be applied on a waveguide made movable based on MEMS.

Description

Manufacturing method of an optical device based on an atomic layer deposition method

The present invention relates to a method of manufacturing an optical device, and more particularly, to a technical idea of depositing a chemical material to which an atomic layer deposition method can be applied on a structure made to move based on MEMS.

In general, as a method of depositing a thin film of a predetermined thickness on a substrate such as a semiconductor substrate or glass, physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical reaction using chemical reaction and chemical vapor deposition (CVD).

However, in recent years, as the design rule of semiconductor devices is rapidly becoming finer, a thin film with a fine pattern is required and the step difference in the area where the thin film is formed is also very large, so it is difficult to form a fine pattern with an atomic layer thickness very uniformly. The use of atomic layer deposition (ALD) having excellent step coverage is increasing.

This atomic layer deposition method is similar to a general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product on a substrate, the atomic layer deposition method injects a gas containing a single source material into the process chamber to be heated. The difference is that a chemical reaction product between the source materials is deposited on the surface of the substrate by chemisorption on the substrate and then a gas containing another source material is injected into the process chamber.

This atomic layer deposition method is a thin film encapsulation of an AMOLED display, a barrier film of a flexible substrate, a solar buffer layer, a high-k material for a semiconductor high-k capacitor, or aluminum (Al) ), a copper (Cu) interconnection diffusion barrier film (TiN, TaN, etc.) may be used.

In addition, in the atomic layer deposition method, single-wafer, batch, and scan-type small reactors used in plasma enhanced chemical vapor deposition (PECVD) up to now are transported on a substrate or in the opposite manner.

Meanwhile, the demand for optical devices such as optical phased array (OPA) chips based on waveguides has recently increased. Accordingly, efforts to improve the performance of optical devices are continuing.

Korean Patent Registration No. 10-2075764, "Heterogeneous optical integrated circuit and manufacturing method thereof" Korean Patent Application Laid-Open No. 10-2021-0105974, "Method for manufacturing optical connector module and optical waveguide substrate"

An object of the present invention is to provide a method for manufacturing an optical device capable of depositing a chemical material to which an atomic layer deposition method is applicable on a waveguide made to move based on MEMS.

Another object of the present invention is to provide a method of manufacturing an optical device capable of reducing a gap between a plurality of waveguides spaced apart within the device.

Another object of the present invention is to provide a method of manufacturing an optical device capable of improving a coupling ratio and a phase shifting characteristic.

A method of manufacturing an optical device according to an embodiment of the present invention includes loading a substrate having a plurality of waveguides spaced apart from each other with a predetermined gap into a chamber, and each of the plurality of waveguides through an atomic layer deposition method. It may include depositing a metal oxide on the.

According to one side, the plurality of waveguides may include a first waveguide and a second waveguide formed based on a silicon (Si) material.

According to one side, the first waveguide may be formed with a width of 400 nm and a thickness of 220 nm.

According to one side, the second waveguide may be formed with a width of 350 nm and a thickness of 220 nm.

According to one side, depositing the metal oxide includes exposing a metal precursor on the substrate, purging the metal precursor from the chamber, exposing the reaction gas on the substrate, and purging the reaction gas from the chamber. may further include.

According to one side, the metal precursor is silicon (Si), hafnium (Hf), tantalum (Ta), aluminum (Al), lanthanum (La), yttrium (Y), zirconium (Zr), magnesium (Mg), strontium ( Sr), lead (Pb), titanium (Ti), niobium (Nb), cerium (Ce), ruthenium (Ru), barium (Ba), calcium (Ca), indium (In), germanium (Ge), tin ( Sn), vanadium (V), arsenic (As), praseodymium (Pr), antimony (Sb), and may include at least one of phosphorus (P).

According to one side, the reaction gas may be a gas including at least one of oxygen (O ₂ ), ozone (O ₃ ), nitrogen monoxide (NO), and nitrogen dioxide (N ₂ O).

According to one side, the metal oxide is Al ₂ O ₃ , SiO ₂ , HfO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , MgO, SrO, PbO, TiO ₂ , Nb ₂ O ₅ , CeO ₂ , SrTiO ₃ , PbTiO ₃ , SrRuO ₃ , (Ba, Sr)TiO ₃ , Pb(Zr, Ti)O ₃ , (Pb, La)(Zr, Ti)O ₃ , (Sr, Ca)RuO ₃ , In ₂ O ₃ , RuO ₂ , B ₂ O ₃ , GeO ₂ , SnO ₂ , PbO ₂ , Pb ₃ O ₄ , V ₂ O ₃ , As ₂ O ₅ , As ₂ O ₃ , Pr ₂ O ₃ , Sb ₂ O ₃ , Sb ₂ O ₅ , CaO, P ₂ O ₅ , AlON, and may include at least one of SiON.

According to one side, the substrate is silicon (Si, silicon), silicon oxide (SiO ₂ , silicon oxide), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, magnesium oxide), silicon carbide (SiC, silicon) carbide), silicon nitride (SiN, silicon nitride), glass, quartz, sapphire, graphite, graphene, polyimide (PI, polyimide), polyester (PE) , polyester) polyethylene naphthalate (PEN, poly(2,6-ethylenenaphthalate)), polymethyl methacrylate (PMMA, polymethyl methacrylate), polyurethane (PU, polyurethane), fluoropolymer (FEP, fluoropolymers) and polyethylene terephthalate (polyethyleneterephthalate, PET) may include at least one.

According to one side, in the step of depositing the metal oxide, the metal oxide is deposited to a width of 20 nm to 50 nm on each of the plurality of waveguides, so that the effective index of the plurality of waveguides is 2.38 to 2.41. have.

According to one side, the step of depositing the metal oxide is to deposit the metal oxide to a width of 20 nm to 50 nm on each of the plurality of waveguides, so that the phase shift for the plurality of waveguides is 0 to 4 Rad. can

According to one embodiment, the present invention can deposit a chemical material applicable to the atomic layer deposition method on a waveguide made to move based on MEMS.

In addition, the present invention can reduce the gap between a plurality of spaced waveguides within a device.

In addition, the present invention may improve a coupling ratio and a phase shifting characteristic.

1 is a view for explaining a method of manufacturing an optical device according to an embodiment.
FIG. 2 is a diagram illustrating in more detail a step of depositing a metal oxide in a method of manufacturing an optical device according to an exemplary embodiment.
3 is a view for explaining an optical device according to an embodiment.
4A to 4B are views for explaining an optical simulation result of an optical device according to an exemplary embodiment.
5A to 5B are diagrams for explaining effective refractive index and phase shift characteristics of an optical element according to an embodiment.

Hereinafter, various embodiments of the present document will be described with reference to the accompanying drawings.

Examples and terms used therein are not intended to limit the technology described in this document to specific embodiments, and should be understood to include various modifications, equivalents, and/or substitutions of the embodiments.

In the following, when it is determined that a detailed description of a known function or configuration related to various embodiments may unnecessarily obscure the gist of the present invention, a detailed description thereof will be omitted.

In addition, terms to be described later are terms defined in consideration of functions in various embodiments, which may vary according to intentions or customs of users and operators. Therefore, the definition should be made based on the content throughout this specification.

In connection with the description of the drawings, like reference numerals may be used for like components.

The singular expression may include the plural expression unless the context clearly dictates otherwise.

In this document, expressions such as “A or B” or “at least one of A and/or B” may include all possible combinations of items listed together.

Expressions such as "first," "second," "first," or "second," can modify the corresponding elements, regardless of order or importance, and to distinguish one element from another element. It is used only and does not limit the corresponding components.

When an (eg, first) component is referred to as being “(functionally or communicatively) connected” or “connected” to another (eg, second) component, one component is the other component. may be directly connected to, or may be connected through another component (eg, a third component).

As used herein, "configured to (or configured to)" according to the context, for example, hardware or software "suitable for," "having the ability to," "modified to ," "made to," "capable of," or "designed to," may be used interchangeably.

In some contexts, the expression “a device configured to” may mean that the device is “capable of” with other devices or components.

For example, the phrase “a processor configured (or configured to perform) A, B, and C” refers to a dedicated processor (eg, an embedded processor) for performing the operations, or by executing one or more software programs stored in a memory device. , may refer to a general-purpose processor (eg, a CPU or an application processor) capable of performing corresponding operations.

Also, the term 'or' means 'inclusive or' rather than 'exclusive or'.

That is, unless stated otherwise or clear from context, the expression 'x employs a or b' means any one of natural inclusive permutations.

In the specific embodiments described above, elements included in the invention are expressed in singular or plural according to the specific embodiments presented.

However, the singular or plural expression is appropriately selected for the situation presented for convenience of description, and the above-described embodiments are not limited to the singular or plural component, and even if the component is expressed in plural, it is composed of a singular or , even a component expressed in a singular may be composed of a plural.

On the other hand, although specific embodiments have been described in the description of the invention, various modifications are possible without departing from the scope of the technical idea contained in the various embodiments.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims described below as well as the claims and equivalents.

1 is a view for explaining a method of manufacturing an optical device according to an embodiment.

Referring to FIG. 1 , in the method of manufacturing an optical device according to an exemplary embodiment, a chemical material to which an atomic layer deposition method is applicable may be deposited on a waveguide made to move based on MEMS.

In addition, the method of manufacturing an optical device according to an exemplary embodiment may reduce a gap between a plurality of waveguides spaced apart from each other in the device.

In addition, the method of manufacturing an optical device according to an embodiment may improve a coupling ratio and a phase shifting characteristic.

Specifically, in step 110 , the manufacturing method according to the embodiment may load a substrate having a plurality of waveguides spaced apart from each other with a predetermined gap into the chamber.

According to one side, the plurality of waveguides may include a first waveguide and a second waveguide formed based on a silicon (Si) material, wherein the second waveguide may be a phase shifter.

For example, the first waveguide may have a width of 400 nm and a thickness of 220 nm, and the second waveguide may be formed with a width of 350 nm and a thickness of 220 nm.

In addition, the substrate is silicon (Si, silicon), silicon oxide (SiO ₂ , silicon oxide), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, magnesium oxide), silicon carbide (SiC, silicon carbide) , silicon nitride (SiN), glass, quartz, sapphire, graphite, graphene, polyimide (PI, polyimide), polyester (PE, polyester) ) Polyethylene naphthalate (PEN, poly(2,6-ethylenenaphthalate)), polymethyl methacrylate (PMMA, polymethyl methacrylate), polyurethane (PU, polyurethane), fluoropolymers (FEP, fluoropolymers) and polyethyleneterephthalate , PET) may include at least one of.

According to one side, in step 110 , the manufacturing method according to the embodiment may form a plurality of waveguides spaced apart from each other on a substrate.

Specifically, in step 110 , the manufacturing method according to the embodiment may form a core layer including a silicon (Si) material on a substrate.

Next, in step 110 , the manufacturing method according to the embodiment may form a mask pattern at positions corresponding to the plurality of waveguides on the core layer.

Next, in step 110 , in the manufacturing method according to the exemplary embodiment, a plurality of waveguides may be formed by removing the remaining regions from the core layer except for the position where the mask pattern is formed through patterning on the core layer.

In step 120, the manufacturing method according to the embodiment may deposit a metal oxide on each of the plurality of waveguides through an atomic layer deposition method.

For example, the metal oxide may be deposited with a width of 20 nm to 50 nm on each of the plurality of waveguides through an atomic layer deposition method, and preferably, the metal oxide may be aluminum oxide (Al ₂ O ₃ ).

The step of depositing the metal oxide (step 220) of the manufacturing method according to an embodiment will be described in more detail later with reference to FIG. 2 of the embodiment.

FIG. 2 is a diagram illustrating in more detail a step of depositing a metal oxide in a method of manufacturing an optical device according to an exemplary embodiment.

Referring to FIG. 2 , in the method of manufacturing an optical device according to an exemplary embodiment, when a substrate having a plurality of waveguides spaced apart from each other with a predetermined gap is loaded into a chamber, each of the plurality of waveguides is formed through an atomic layer deposition method. Metal oxides can be deposited on the surface.

The atomic layer deposition method can realize a thin film through atomic layer deposition and has excellent step coverage to deposit a thin film with a uniform thickness over a large area, so that a three-dimensional structure of nanometer size can be achieved. It is very advantageous for manufacturing the latest semiconductor devices.

In addition, since the precursor and the reactant are alternately exposed on the surface, and the reaction proceeds only on the surface, it is possible to deposit a thin film with high density and fewer defects. However, among the atomic layer deposition methods, thermal ALD using water as a reactant may deteriorate the underlying structure performance because water is directly exposed to organic materials.

Therefore, it is preferable to use a plasma-enhanced atomic layer deposition method, and since a reactive gas free radical having high reactivity is used as a reactant in the plasma-enhanced atomic layer deposition method, high-quality thin film deposition is possible at a relatively low temperature.

In the plasma-enhanced atomic layer deposition method, a reaction gas is formed of highly reactive radicals and ions by plasma, and the reaction rate can be increased by participating in the reaction.

In the manufacturing method according to an embodiment, steps 210 to 240 described below may be repeated a predetermined number of times to deposit a metal oxide to a predetermined width on the surface of each of the plurality of waveguides. Preferably, the metal oxide may be deposited on the surface of each of the plurality of waveguides to a width of 20 nm to 50 nm.

According to one side, the metal oxide is Al ₂ O ₃ , SiO ₂ , HfO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , MgO, SrO, PbO, TiO ₂ , Nb ₂ O ₅ , CeO ₂ , SrTiO ₃ , PbTiO ₃ , SrRuO ₃ , (Ba, Sr)TiO ₃ , Pb(Zr, Ti)O ₃ , (Pb, La)(Zr, Ti)O ₃ , (Sr, Ca)RuO ₃ , In ₂ O ₃ , RuO ₂ , B ₂ O ₃ , GeO ₂ , SnO ₂ , PbO ₂ , Pb ₃ O ₄ , V ₂ O ₃ , As ₂ O ₅ , As ₂ O ₃ , Pr ₂ O ₃ , Sb ₂ O ₃ , Sb ₂ O ₅ , CaO, P ₂ O ₅ , may include at least one of AlON, and SiON, but preferably, the metal oxide may be aluminum oxide (Al ₂ O ₃ ).

Specifically, in step 210 , the manufacturing method according to the embodiment may expose a metal precursor on a substrate on which a plurality of waveguides are formed.

According to one side, the metal precursor is silicon (Si), hafnium (Hf), tantalum (Ta), aluminum (Al), lanthanum (La), yttrium (Y), zirconium (Zr), magnesium (Mg), strontium ( Sr), lead (Pb), titanium (Ti), niobium (Nb), cerium (Ce), ruthenium (Ru), barium (Ba), calcium (Ca), indium (In), germanium (Ge), tin ( Sn), vanadium (V), arsenic (As), praseodymium (Pr), antimony (Sb), and may include at least one of phosphorus (P), preferably, the metal precursor may include aluminum (Al) can

According to one side, in step 210, the manufacturing method according to the embodiment may expose the metal precursor on the substrate on which the plurality of waveguides are formed at a pressure of 100 mTorr to 200 mTorr.

More specifically, if the exposure pressure of the metal precursor is 100 mTorr or less, the metal precursor is not sufficiently adsorbed to the substrate, and if it exceeds 200 mTorr, the purge process time for removing the overexposed metal precursor increases, thereby reducing the yield. In step 210, the manufacturing method according to an embodiment may expose the metal precursor at a pressure of 100 mTorr to 200 mTorr.

In step 220, the manufacturing method according to the embodiment may purify the metal precursor from the chamber.

Specifically, in step 220, the manufacturing method according to an embodiment stops the supply of the metal precursor and purifies the metal precursor remaining in the chamber, and the method of purging the chamber is supplying a purge gas or pumping down ( pump down) may be performed through any one of performing, but is not limited thereto.

When an inert gas is injected into the chamber to remove a metal precursor that is not adsorbed to the substrate, as an inert gas, for example, helium (He, helium), neon (Ne, Neon), argon (Ar, Argon), krypton ( Kr, Krypton), at least one of xenon (Xe, Xenon), and radon (Rn, Radon) may be used.

In operation 230 , the manufacturing method according to an embodiment may expose a reactive gas on the substrate.

According to one side, the reaction gas may include at least one of oxygen (O ₂ ), ozone (O ₃ ), nitrogen monoxide (NO), and nitrogen dioxide (N ₂ O).

That is, in step 230, the manufacturing method according to an embodiment supplies a reaction gas that is combined with a metal precursor to chemically react the metal precursor and the reaction gas, and through this, a metal oxide thin film is formed on the surface of each of the plurality of waveguides. can be formed

For example, the reactive gas may be introduced into the chamber by generating active reactive gas radicals and ions (hereinafter, referred to as 'reactive gas plasma') using plasma.

More specifically, the reactive gas plasma may be generated through a direct plasma in the chamber or may be generated through a remote plasma.

Reactive gas plasma is oxygen plasma (O ₂ plasma), ozone plasma (O ₃ plasma), hydrogen peroxide plasma (H ₂ O ₂ plasma), nitrogen monoxide plasma (NO plasma), nitrous oxide plasma (N ₂ O plasma) and water plasma (H ₂ O plasma) may include at least one of.

In step 240, the manufacturing method according to the embodiment may purify the reaction gas from the chamber.

Specifically, in the manufacturing method according to an embodiment, the supply of the reactive gas plasma may be stopped and the reactive gas plasma remaining in the chamber may be purged, and the method of purging the chamber may include supplying a purge gas or performing a pump down. It may be performed through any one of the following, but is not limited thereto.

3 is a view for explaining an optical device according to an embodiment.

Referring to FIG. 3 , the optical device according to the exemplary embodiment may be formed through the method of manufacturing the optical device according to the exemplary embodiment described with reference to FIGS. 1 to 2 .

In addition, the optical device further includes the first waveguide 310, the second waveguide 330, and the metal oxides 320 and 340 deposited on the first waveguide 310 and the second waveguide 330 through the atomic layer deposition method, respectively. may be included, and the first waveguide 310 , the second waveguide 330 , and the metal oxides 320 and 340 may be formed on the substrate.

For example, the first waveguide 310 has a width of 400 nm (x-axis direction, W in FIG. 3 ) and a thickness of 220 nm (y-axis direction in FIG. 3 ), and the second waveguide 330 has a width of 350 nm. (W) and may be formed to a thickness of 220 nm.

For example, the substrate may include silicon (Si, silicon), silicon oxide (SiO ₂ , silicon oxide), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, magnesium oxide), and silicon carbide (SiC, silicon). carbide), silicon nitride (SiN, silicon nitride), glass, quartz, sapphire, graphite, graphene, polyimide (PI, polyimide), polyester (PE) , polyester) polyethylene naphthalate (PEN, poly(2,6-ethylenenaphthalate)), polymethyl methacrylate (PMMA, polymethyl methacrylate), polyurethane (PU, polyurethane), fluoropolymer (FEP, fluoropolymers) and polyethylene terephthalate (polyethyleneterephthalate, PET) may include at least one.

According to one side, the metal oxides 320 and 340 are formed on the surface of each of the first waveguide 310 and the second waveguide 330 through an operation of alternately injecting and purging the metal oxide and the reaction gas in the chamber. 320 and 340 may be deposited with a predetermined width (thickness).

For example, the metal precursor is silicon (Si), hafnium (Hf), tantalum (Ta), aluminum (Al), lanthanum (La), yttrium (Y), zirconium (Zr), magnesium (Mg), strontium ( Sr), lead (Pb), titanium (Ti), niobium (Nb), cerium (Ce), ruthenium (Ru), barium (Ba), calcium (Ca), indium (In), germanium (Ge), tin ( Sn), vanadium (V), arsenic (As), praseodymium (Pr), antimony (Sb), and may include at least one of phosphorus (P), preferably, the metal precursor may include aluminum (Al) can

In addition, the reaction gas may include at least one of oxygen (O ₂ ), ozone (O ₃ ), nitrogen monoxide (NO), and nitrogen dioxide (N ₂ O).

Preferably, the metal oxides 320 and 340 are aluminum oxide (Al ₂ O ₃ ), and may be deposited on the surface of each of the first waveguide 310 and the second waveguide 320 with a width of 20 nm to 50 nm.

That is, in the optical device according to an embodiment, metal oxides 320 and 340 are deposited on the surfaces of the first waveguide 310 and the second waveguide 320 by using an atomic layer deposition method, whereby the first waveguide 310 is and a reduced gap between the second waveguides 320 may be reduced than an initial gap.

4A to 4B are views for explaining an optical simulation result of an optical device according to an exemplary embodiment.

4A to 4B , reference numeral 410 denotes a simulation result of a structure at lumerical of an optical device according to an embodiment, and reference numeral 420 denotes a mode of the optical device according to an embodiment. The mode confinement simulation results are shown.

Referring to reference numerals 410 and 420, it was confirmed that the device formed through the method of manufacturing the optical device according to the embodiment operates without abnormality as the optical device.

5A to 5B are diagrams for explaining effective refractive index and phase shift characteristics of an optical element according to an embodiment.

5A to 5B, reference numeral 510 denotes a change characteristic of an effective index according to a change in a deposition width of a metal oxide of an optical element according to an embodiment, and reference numeral 520 shows a change characteristic of a phase shift according to a change in a deposition width of a metal oxide of an optical device according to an exemplary embodiment.

In addition, the 'best case' shown in reference numerals 510 to 520 indicates the result of confirming the characteristics of the optical element having an effective index n of 1.6216 and an absorption coefficient k of 8 x 10 ^-5 , and 'worst case' represents the result of confirming the characteristics of an optical element having an effective refractive index n of 1.75 and an absorption coefficient k of 0.02.

Here, in the optical device according to an embodiment, the first waveguide is formed with a width of 400 nm and a thickness of 220 nm, and the second waveguide is formed with a width of 350 nm and a thickness of 220 nm. and aluminum oxide (Al ₂ O ₃ ), which is a metal oxide, was deposited on the surfaces of the first waveguide and the second waveguide through an atomic layer deposition method.

Referring to reference numerals 510 to 520, in the optical device formed through the method of manufacturing an optical device according to an embodiment, a metal oxide may be deposited on each of the plurality of waveguides to have a width of 20 nm to 50 nm, through which a plurality of The effective refractive index for the waveguide may be 2.38 to 2.41, and the phase shift for the plurality of waveguides may be 0 to 4 Rad.

After all, by using the present invention, a chemical material to which the atomic layer deposition method can be applied can be deposited on a waveguide made to move based on MEMS.

In addition, by using the present invention, it is possible to reduce the gap between a plurality of waveguides spaced apart in the device.

In addition, using the present invention, it is possible to improve the coupling ratio (coupling ratio) and phase shifting (phase shifting) characteristics.

As described above, although the embodiments have been described with reference to the limited drawings, various modifications and variations are possible from the above description by those of ordinary skill in the art. For example, the described techniques are performed in an order different from the described method, and/or the described components of the system, structure, apparatus, circuit, etc. are combined or combined in a different form than the described method, or other components Or substituted or substituted by equivalents may achieve an appropriate result.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

110: Loading a substrate on which a plurality of waveguides are formed
120: depositing a metal oxide on the plurality of waveguides

Claims (11)

loading a substrate having a plurality of waveguides spaced apart from each other with a predetermined gap into a chamber; and
depositing a metal oxide on each of the plurality of waveguides through an atomic layer deposition method;
A method of manufacturing an optical device comprising a. According to claim 1,
The plurality of waveguides,
A method of manufacturing an optical device, comprising: a first waveguide and a second waveguide formed based on a silicon (Si) material. 3. The method of claim 2,
The first waveguide is
A method of manufacturing an optical device, characterized in that it is formed with a width of 400 nm and a thickness of 220 nm. 3. The method of claim 2,
The second waveguide is
A method of manufacturing an optical device, characterized in that it is formed with a width of 350 nm and a thickness of 220 nm. According to claim 1,
Depositing the metal oxide comprises:
exposing a metal precursor on the substrate;
purging the metal precursor from the chamber;
exposing a reactant gas onto the substrate; and
purging the reaction gas from the chamber.
Method of manufacturing an optical device, characterized in that it further comprises. 6. The method of claim 5,
The metal precursor is
Silicon (Si), hafnium (Hf), tantalum (Ta), aluminum (Al), lanthanum (La), yttrium (Y), zirconium (Zr), magnesium (Mg), strontium (Sr), lead (Pb) , titanium (Ti), niobium (Nb), cerium (Ce), ruthenium (Ru), barium (Ba), calcium (Ca), indium (In), germanium (Ge), tin (Sn), vanadium (V) , Arsenic (As), praseodymium (Pr), antimony (Sb) and phosphorus (P), characterized in that it comprises at least one of the method of manufacturing an optical device. 6. The method of claim 5,
The reaction gas is oxygen (O ₂ ), ozone (O ₃ ), nitrogen monoxide (NO), and nitrogen dioxide (N ₂ O) The method of manufacturing an optical element, characterized in that the gas containing at least one of. The metal oxide is
Al ₂ O ₃ , SiO ₂ , HfO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , MgO, SrO, PbO, TiO ₂ , Nb ₂ O ₅ , CeO ₂ , SrTiO ₃ , PbTiO ₃ , SrRuO ₃ , (Ba, Sr)TiO ₃ , Pb(Zr, Ti)O ₃ , (Pb, La)(Zr, Ti)O ₃ , (Sr, Ca)RuO ₃ , In ₂ O ₃ , RuO ₂ , B ₂ O ₃ , GeO ₂ , SnO ₂ , PbO ₂ , Pb ₃ O ₄ , V ₂ O ₃ , As ₂ O ₅ , As ₂ O ₃ , Pr ₂ O ₃ , Sb ₂ O ₃ , Sb ₂ O ₅ , CaO, P ₂ O ₅ , AlON, and a method of manufacturing an optical device comprising at least one of SiON. According to claim 1,
The substrate is
Silicon (Si, silicon), silicon oxide (SiO ₂ , silicon oxide), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, magnesium oxide), silicon carbide (SiC, silicon carbide), silicon nitride (SiN) , silicon nitride), glass, quartz, sapphire, graphite, graphene, polyimide (PI, polyimide), polyester (PE, polyester) polyethylene naphthalate (PEN, poly(2,6-ethylenenaphthalate)), polymethyl methacrylate (PMMA, polymethyl methacrylate), polyurethane (PU, polyurethane), fluoropolymers (FEP, fluoropolymers) and polyethyleneterephthalate (PET) A method of manufacturing an optical device comprising at least one. According to claim 1,
Depositing the metal oxide comprises:
Method of manufacturing an optical device, characterized in that the metal oxide is deposited on each of the plurality of waveguides to a width of 20 nm to 50 nm, so that an effective index of the plurality of waveguides is 2.38 to 2.41 . According to claim 1,
Depositing the metal oxide comprises:
The metal oxide is deposited on each of the plurality of waveguides to have a width of 20 nm to 50 nm, so that a phase shift for the plurality of waveguides is 0 to 4 Rad. Way.

Images