KR20170105904A - Low-emissivity glass - Google Patents

Abstract

The present invention relates to a low emissivity glass, and more particularly to a low emissivity glass comprising: a glass substrate; A first dielectric layer formed on the glass substrate and formed by sequentially laminating a high refractive index thin film having a refractive index of 2.0 or more and a low refractive index thin film having a refractive index of 1.6 or less; A first barrier layer formed on the first dielectric layer and made of TiN or diatomaceous carbon (DLC) formed so as to have a lamination characteristic of 0 to 10? /? A low radiation layer; A second barrier layer formed on the low emissivity layer and made of TiN or DLC (diamaind like carbon); And a second dielectric layer formed on the second barrier layer and made of the same material as the first dielectric layer. The low-emission glass according to the present invention prevents exposure to an oxidizing environment during the manufacturing process, The diffusion of oxygen into the dielectric layer and the diffusion of the low-emission layer into the dielectric layer can be prevented and the initial low emissivity can be maintained for a longest time.

Description

[0001] LOW-EMISSIVITY GLASS [0002]

The present invention relates to a low emissivity glass, and more particularly to a low emissivity glass comprising: a glass substrate; A first dielectric layer formed on the glass substrate and formed by sequentially laminating a high refractive index thin film having a refractive index of 2.0 or more and a low refractive index thin film having a refractive index of 1.6 or less; A first barrier layer formed on the first dielectric layer and made of TiN or diatomaceous carbon (DLC) formed so as to have a lamination characteristic of 0 to 10? /? A low radiation layer; A second barrier layer formed on the low emissivity layer and made of TiN or DLC (diamaind like carbon); And a second dielectric layer formed on the second barrier layer and made of the same material as the first dielectric layer.

The glass used for the window of a building has a very large proportion as the exterior material of the building because of its transparency, securing the view of the interior in the room and enhancing the lightenability of the building. However, recently, in order to increase the thermal efficiency of the window by energy saving, the structure of the window has been widely used as the window of the double-layered glass structure. The windows of the multi-layered glass structure have a hollow portion with a low thermal conductivity between the glass plates to prevent heat conduction and convection. For example, a spacer for maintaining a gap between glass plates is prepared, an adhesive liquid is coated on both sides of the spacer, a predetermined pressure and heat are applied in a vacuum state, and a glass plate is bonded to both sides of the spacer. Such double-layered windows are relatively more excellent in insulation and soundproofing effect than existing single-layered glass windows.

In sunlight, ultraviolet light corresponding to the 100 nm to 380 nm band is known to damage the skin or discolor the object. Infrared rays corresponding to the 700 nm to 2300 nm band have a thermal energy equivalent to about 53% of solar energy. In particular, near infrared rays corresponding to the 700 nm to 1500 nm band have a high energy density. . In addition, when the room is heated in winter, most of the heat in the room is lost through the window due to the emission of infrared rays. The problems caused by the inflow or the outflow of infrared rays are also reflected in the windows of the double-layered glass structure. In the prior art known so far, in order to block heat, a method of coating an infrared ray reflective material on most window glass or a method of containing a reflective material in window glass is used.

Low emissivity glass, commonly known as low-E glass, refers to glass deposited with a low emissivity layer containing a metal with a high reflectance in the infrared region, such as silver (Ag). The low-emission glass retains transparency in the visible light region, but has the property of reflecting radiant heat again without transmitting it. That is, in the summer, the radiant heat generated from the solar heat is blocked from entering the room, and in winter, the infrared rays reflected from the room heater are reflected and returned to the room. These low-emission glass is a functional material that reflects radiation in the infrared region, shields outdoor solar radiation in summer, and conserves indoor radiant heat in winter, thereby reducing energy consumption of buildings. In general, silver (Ag) used as a low-emission layer is oxidized when exposed to air, so that a dielectric layer is deposited on the upper and lower portions of the low-emission layer using an oxidation-resistant layer. This dielectric layer also serves to increase the visible light transmittance.

On the other hand, the film structure proposed in patent EP-0718250 introduces an oxygen barrier diffusion layer, in particular a layer based on silicon nitride (SixNy), on top of the silver-based functional layer or layers, layer or a protective metal layer, and a silver (Ag) layer directly over the underlying dielectric coating. This suggests a multilayer structure of Si3N4 / ZnO / Ag / Nb / ZnO / Si3N4 or SiO2 / ZnO / Ag / Nb / Si3N4 type. The multi-layer structure of Si3N4 / Nb / Ag / Nb / Si3N4 is also described in this patent. Korean Patent Laid-Open No. 10-2009-0099364 discloses a first dielectric layer sequentially coated on a glass substrate; A first functional reflective metal protective layer comprising a Ni-Cr alloy or a Ni-Cr alloy nitrided or oxidized to 50 mol% or less; A functional reflective metal layer that reflects infrared or solar radiation; A second functional reflective metal protective layer comprising a Ni-Cr alloy or a Ni-Cr alloy nitrided or oxidized to 50 mol% or less; A second dielectric layer; And a top protective layer. Korean Patent Laid-Open No. 10-2015-0069534 discloses a substrate; Low emissivity coating layer; And an uppermost coating layer, wherein the uppermost coating layer sequentially comprises a metal layer, a metal oxide layer and a metal oxynitride layer from the low spin coating layer.

However, the dielectric layer, the metal layer, or the metal oxide layer employed as the protective layer of the low-emission layer described above is coated with a thin film by sputtering at the time of film formation. The metal or metal oxide is continuously oxidized, There is a problem of diffusing into the low radiation layer or conversely, diffusing silver into the dielectric layer and oxidizing and weakening the low radiation layer. In addition, a reactive gas having a high energy (300 eV-600 eV) is used for the metal target in the sputtering method. However, since the Ag layer is damaged and oxidized by the oxygen anion (O ^- ), Is low in efficiency and has a problem with long-term durability due to continuous exposure to oxidizing environment.

European Patent EP-0718250 Korean Patent Publication No. 10-2009-0099364 Korean Patent Publication No. 10-2015-0069534

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method and apparatus for preventing exposure to an oxidizing environment during the manufacturing process and also to prevent diffusion of oxygen from the dielectric layer or low-radiation-layer protective layer and outflow to the barrier layer or dielectric layer of the low- And to provide a low-emission glass which can maintain the emissivity as long as possible.

In order to accomplish the above object, the present invention provides a glass substrate comprising: a glass substrate; A first dielectric layer formed on the glass substrate and formed by sequentially laminating a high refractive index thin film having a refractive index of 2.0 or more and a low refractive index thin film having a refractive index of 1.6 or less; A first barrier layer formed on the first dielectric layer and made of TiN or diatomaceous carbon (DLC) formed so as to have a lamination characteristic of 0 to 10? /? A low radiation layer; A second barrier layer formed on the low emissivity layer and made of TiN or DLC (diamaind like carbon); And a second dielectric layer formed on the second barrier layer and made of the same material as the first dielectric layer.

Also, the present invention provides a low-emission glass characterized in that the high-refraction thin film is at least one material selected from the group consisting of ZnO2, TiO2, Nb2O5, ZnOxNy and TiOxNy, and the low refractive film is SiO2.

The present invention also provides a low-emission glass characterized in that the first and second barrier layers are formed to a thickness ranging from 5 to 10 nm.

The present invention also provides a low-emission glass characterized in that the first and second barrier layers are formed by a reactive sputtering method, and Ar or N2 gas is formed using metal Ti or carbon under a pressure of 0.5 to 10 mtorr do.

The low emissivity glass according to the present invention can prevent exposure to an oxidizing environment during the manufacturing process and also prevent the diffusion of oxygen from the dielectric layer and diffusion of the low emissivity layer into the dielectric layer, thereby maintaining the initial low emissivity as long as possible.

1 is a cross-sectional view for explaining the structure of a conventional low-emission glass
2 is a cross-sectional view for explaining the structure of one embodiment of the low emissivity glass manufactured according to the present invention

Hereinafter, the present invention will be described in detail with reference to the drawings attached hereto.

2 is a cross-sectional view for explaining the structure of one embodiment of the low-emission glass produced according to the present invention. As can be seen in Figure 2, the low emissivity glass 100 of the present invention comprises a glass substrate 10; A first dielectric layer 20 formed on the glass substrate 10 and formed by sequentially laminating a high refractive index thin film having a refractive index of 2.0 or more and a low refractive index thin film having a refractive index of 1.6 or less; A first barrier layer formed on the first dielectric layer 20 and made of TiN or DIA (diamaind like carbon) formed to have a lamination characteristic of the low-emission layer at a temperature of 500 ° C or below of 0 to 10? /? 30); A low-radiation layer (40) formed on the first barrier layer (30); A second barrier layer 50 formed on the low-emission layer 40 and made of TiN or DLC (diamaind-like carbon); And a second dielectric layer 60 formed on the second barrier layer 50 and made of the same material as the first dielectric layer 20.

The glass substrate 10 of the low-emission glass 100 of the present invention is not particularly limited, and any person skilled in the art will be familiar with the present invention and will not be described in detail here.

The low emissivity glass (100) of the present invention comprises a first dielectric layer (20) formed on the glass substrate (10). The first dielectric layer 20 enhances physical mechanical strength and primarily protects the low radiation layer 40. The first dielectric layer 20 is formed of a high refractive index thin film having a refractive index of 2 or more (at least one selected from the group consisting of ZnO2, TiO2, Nb2O5, ZnOxNy and TiOxNy, 1 <x <2 and 1 <y <4) (SiO2) are successively laminated in an odd number of layers, and the film thickness is 70 nm to 150 nm, which is coated on a glass substrate to have a low reflection function of 10% or less with respect to visible light. The thicknesses of the high refraction thin film and the low refraction thin film are preferably in the range of 10 nm to 80 nm and 10 nm to 140 nm, respectively. The formation of the first dielectric layer 20 and the second dielectric layer 60 may be performed by a known coating method such as sputtering, CVD, PVD or CPVD, or a coating solution in a sol state, gel method, which is formed by coating with a coating apparatus such as a blade, followed by drying, and is not particularly limited. In one embodiment of the present invention, a sputtering method is used for forming the dielectric layer. In the coating of the oxide thin film, a metal is used. Ar and oxygen are used for the gas, and the oxygen ratio is 10 to 100%. The power source to be applied to the target is pulse DC type, and the frequency is 10-50 kHz and the duty rate is 0.3. The thin film coating was carried out under a pressure of 1.5 mtorr.

The low-emission glass 100 of the present invention is formed of TiN or DLC (diamaind-like carbon (DLC)) formed on the first dielectric layer 20 and formed to have a lamination characteristic of a low- ). &Lt; / RTI &gt; As described above, in the conventional low emission glass 100, the dielectric itself is used as a protective layer of the low emission layer 40, or a separate metal layer or a part of metal oxynitride is formed on the dielectric layer, And used as a protective layer. However, these protective films are insufficient in their ability to accelerate the oxidation of the low-emission layer 40 in its production or to prevent the diffusion of the oxide or the diffusion of the substances constituting the low-emission layer 40 into the dielectric layer, The durability of the layer 40 is lowered. Therefore, in the present invention, TiN or DLC (diamond-like carbon) having a low material diffusion coefficient is used as a barrier layer and a barrier layer 30, 50 is formed under an oxygen- ) And diffusion of the low emissivity layer are minimized. In the case of the first barrier layer 30, it is preferable that the thickness is in the range of 5 to 10 nm. If the thickness of the first barrier layer 30 is less than 5 nm, the oxygen permeability increases and the oxidation of the low radiation layer 40 is insufficient and the low radiation layer is diffused into the dielectric layer, On the other hand, if it exceeds 10 nm, there is a problem that the light transmittance is lowered. In particular, when the barrier layers 30 and 50 have a thickness in the above-described range, it is preferable that the sheet resistance of the low radiation layer 40 in the low radiation glass 100 is 10? /? Or less at 500 占 폚 or less. The fact that the sheet resistance of the low-spinning layer 40 is substantially unchanged at a high temperature (500 ° C) as well as at a normal temperature indicates that the oxidation of the low-spinning layer is minimized through the barrier layer, It means that there is little diffusion.

The low emissivity glass (100) of the present invention comprises a low emissivity layer (40) formed on the first barrier layer (30). The term &quot; low emissivity &quot; as used herein means a lower emissivity than a glass substrate. Emissivity indicates how much the glass reflects the infrared energy of long wavelength (800-40,000) nm and reflects well when the emissivity is small. The emissivity of the uncoated plain glass is 0.84. As the known low-emission layer 40, metals having low emissivity such as silver (Ag) are typical. Those skilled in the art will recognize that the type of low-emission layer 40 and the method of manufacturing the low-emission layer 40 will not be described in detail herein.

The low emissivity glass 100 of the present invention comprises a second barrier layer 50 formed on the low emissivity layer 40 and made of TiN or diatomic like carbon (DLC). The second barrier layer 50 also has the same function as the first barrier layer 30, and the material, the forming method, the thickness, and the like may be the same as the first barrier layer 30.

The low emissivity glass 100 of the present invention includes a second dielectric layer 60 formed on the second barrier layer 50 and made of the same material as the first dielectric layer 20. Since a target such as ZnOx (1 <x <2), TiOx (1 <x <2) and Nb2Ox (4 <x <5) is used for forming the second dielectric layer, Since the thin film can be fabricated, there is little damage to the TiN thin film by the high-speed ion of O-. Therefore, the TiN thin film has a barrier function and is not deteriorated in low emissivity.

The low emission glass 100 of the present invention may further include a protective layer 70 formed on the second dielectric layer 60. The protective layer 70 is for protecting the laminated film of the low emission glass 100 including the second dielectric layer 60 from scratches or various chemicals. The protective layer 70 may be made of a metal, a metal oxide, a metal nitride, or a DLC.

The embodiments of the present invention described above should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

10: glass substrate 20: first dielectric layer
30: first barrier layer 40: low radiation layer
50: second barrier layer 60: second dielectric layer
70: protective layer 100: low emission glass

Claims (4)

A glass substrate;
A first dielectric layer formed on the glass substrate and formed by sequentially laminating a high refractive index thin film having a refractive index of 2.0 or more and a low refractive index thin film having a refractive index of 1.6 or less;
A first barrier layer formed on the first dielectric layer and made of TiN or diatomaceous carbon (DLC) formed to have a lamination characteristic of a low-radiation layer at a temperature of 500 ° C or less of 10? /? Or less;
A low radiation layer;
A second barrier layer formed on the low emissivity layer and made of TiN or DLC (diamaind like carbon);
And a second dielectric layer formed on the second barrier layer and made of the same material as the first dielectric layer. The method according to claim 1,
Wherein the high refractive index thin film is at least one material selected from the group consisting of ZnO2, TiO2, Nb2O5, ZnOxNy and TiOxNy (1 <x <2, 1 <y <4), and the low refractive film is SiO2 Glass. The method according to claim 1,
Wherein the first and second barrier layers are formed to a thickness ranging from 5 to 10 nm. The method of claim 3,
Wherein the first and second barrier layers are formed by a reactive sputtering method, wherein Ar or N2 gas is formed using metal Ti or carbon under a pressure of 0.5 to 10 mtorr.

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