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KR20160084807A - Shield ring and substrate mounting table - Google Patents

Shield ring and substrate mounting table Download PDF

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Publication number
KR20160084807A
KR20160084807A KR1020150189584A KR20150189584A KR20160084807A KR 20160084807 A KR20160084807 A KR 20160084807A KR 1020150189584 A KR1020150189584 A KR 1020150189584A KR 20150189584 A KR20150189584 A KR 20150189584A KR 20160084807 A KR20160084807 A KR 20160084807A
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Prior art keywords
layer portion
upper layer
substrate
shield ring
long side
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KR1020150189584A
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Korean (ko)
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KR101798733B1 (en
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세이지 다나카
미오 나미키
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도쿄엘렉트론가부시키가이샤
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Publication of KR20160084807A publication Critical patent/KR20160084807A/en
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Publication of KR101798733B1 publication Critical patent/KR101798733B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The object of the present invention is to provide a shield ring of a high number of numbers and a substrate mounting table using the same. As a solving means, there is provided a substrate mounting table having a substrate made of metal on which a substrate is mounted in a chamber for performing a plasma treatment on a substrate to which high frequency power is applied and a substrate mounting portion provided thereon, The insulating shield ring is formed by combining a plurality of constituent members. Each constituent member has a lower layer portion mounted on the base material and an upper layer portion covering the lower layer portion, and the upper layer portion is reversibly provided.

Description

SHIELD RING AND SUBSTRATE MOUNTING TABLE < RTI ID = 0.0 >

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shield ring used for a substrate mounting table of a plasma processing apparatus for performing plasma processing such as plasma etching and a substrate mounting table using such a shield ring.

BACKGROUND ART [0002] Plasma processing such as etching, sputtering, or CVD (Chemical Vapor Deposition) is widely used for a process of manufacturing a flat panel display (FPD). In a plasma processing apparatus that performs plasma processing, a plasma is generated in a state where a substrate is mounted on a substrate mounting table provided in a processing chamber, and a predetermined plasma processing is performed on the substrate by the plasma.

In such a plasma processing apparatus, the substrate mount on which the substrate to be processed is mounted includes a substrate functioning as a lower electrode to which high frequency power for generating plasma is applied, and a shield ring provided around the substrate. Such a shield ring is provided for improving the focus property of plasma and insulating high-frequency electric power, and is formed of insulating ceramics such as alumina and is provided so as to be in contact with the substrate.

Since the FPD substrate is rectangular and large, it is proposed that the shield ring is divided into a plurality of component parts and provided in a frame shape around a rectangular substrate mounting table corresponding to the substrate (for example, , Patent Document 1). Patent Document 2 discloses a technique for preventing a gap or the like from being formed due to the difference in thermal expansion between ceramics constituting the substrate shield ring and the metal constituting the base material of the substrate mounting table.

In the techniques of the above Patent Documents 1 and 2, since the shield ring is eroded by plasma by applying high frequency power to the substrate mounting table, it is necessary to replace the shield ring when the shield ring is eroded by a predetermined amount or more.

Further, there is also known a technique in which a shield ring is made to have a two-layered structure and can be separated (Patent Document 3).

Japanese Patent Application Laid-Open No. 2003-243364 Japanese Patent Application Laid-Open No. 2013-46002 Japanese Patent Application Laid-Open No. 1998-64989

However, when the shield ring is eroded by plasma, the shield ring is concentrated in the vicinity of the substrate, and when only a portion near the substrate is locally eroded by a predetermined amount or more, in the techniques of Patent Documents 1 and 2, It is necessary to replace the upper portion of the shield ring in the technique of Patent Document 3. [

However, the shield ring is expensive, and even if only the upper portion is exchanged as in Patent Document 3, the price is expensive, and it is desired that the lifetime of the shield ring is extremely long and the cost is reduced.

Therefore, it is an object of the present invention to provide a shield ring of a high number and a substrate mounting table using the shield ring.

According to a first aspect of the present invention, there is provided a substrate mounting table having a substrate on which a substrate is mounted in a chamber for plasma processing, a substrate made of metal to which high frequency power is applied, and a substrate mounting portion provided thereon An insulating shield ring disposed around the substrate and the substrate mounting portion, the insulating shielding ring comprising a combination of a plurality of constituent members, wherein each constituent member includes a lower layer portion mounted on the substrate, and an upper layer portion covering the lower layer portion And the upper layer portion is provided so as to be reversible.

According to a second aspect of the present invention, there is provided a substrate mounting table for mounting a substrate in a chamber for performing a plasma process on the substrate, comprising: a substrate made of a metal to which high frequency power is applied; a substrate mounting section provided on the substrate; And an insulating shield ring disposed around the substrate mounting portion, wherein the shield ring has the configuration of the first aspect.

It is preferable that the shield ring is made of an insulating ceramics. In this case, the upper layer portion and the lower layer portion may be made of the same material or different materials.

The upper layer portion may be capable of inversion of inversion, in-plane inversion, or inversion of inversion and in-plane.

The lower layer portion of the constituent member may be screwed to the substrate, and the upper layer portion may be provided to cover the screwed portion. It is preferable that the lower layer portion of the constituent member has a positioning pin for positioning the upper layer portion and the upper layer portion has a positioning hole into which the positioning pin is inserted, , And another positioning hole is formed at a position where the positioning pin is inserted.

The substrate may have a rectangular shape, and the shield ring may have a frame shape. In this case, the constituent member may be a long side member constituting a long side of a frame-like shape and a short side member constituting a short side, and may be a long side member and a short side constituting a long side of a frame- The short side member may be further divided into a plurality of short side members. In these cases, the long-side member and the bottom-layer member of the short side member may have a constrained end and a free end, and allow thermal expansion of the other end side with respect to the one end by heat.

In this case, the lower layer portions of the long side member and the short side member have positioning pins for positioning the upper layer portion and thermal strain follow-up pins provided to follow the thermal deformation, and the upper layer portions of the long side member and the short side member Wherein the positioning pin has holes for positioning pins into which the positioning pins are inserted and long hole-shaped thermal deformation follow-up holes into which the thermal deformation follow-up pins are inserted, and when the predetermined inverting is performed, It is preferable that another positioning hole and another thermal deformation follow-up hole are formed at a position where the thermal deformation follow-up pin is inserted.

In the present invention, since each constituent member constituting the shield ring has the lower layer portion mounted on the substrate and the upper layer portion covering the lower layer portion, and the upper layer portion is reversibly provided, the portion eroded by the plasma at the upper layer portion can be changed , The life of the shield ring can be prolonged.

1 is a sectional view showing a plasma etching apparatus as a plasma processing apparatus to which the present invention is applicable;
Fig. 2 is a partial cross-sectional view showing a substrate table on which a shield ring according to a first embodiment of the present invention is mounted; Fig.
Fig. 3 is a plan view showing a substrate table on which a shield ring according to the first embodiment of the present invention is mounted, Fig.
4 is a perspective view showing a long side member and a short side member constituting a shield ring,
5 is a perspective view for explaining the case of inverting the long side upper side and the short side upper side,
6 is a perspective view for explaining the in-plane reversal of the long-side upper layer portion and the short-side upper layer portion,
7 is a partial sectional view and partial plan view of a substrate table for explaining a state in which the surface of the shield ring is eroded by plasma etching;
8 is a partial cross-sectional view of a substrate mounting table for explaining an example in which the upper side of the long side is inverted in the front and rear directions,
9 is a partial cross-sectional view of a substrate mounting table for illustrating an example of in-plane inversion of a long side upper layer portion,
10 is a partial cross-sectional view of a substrate mounting table for explaining an example of inversion of the long side upper layer portion and inversion of in-plane inversion,
11 is a partial cross-sectional view of the substrate mounting table showing a state in which the screw fixing portion of the lower side long side portion is covered with the upper side upper side,
12 is a cross-sectional view showing an example of a state in which an in-plane reversible long-side upper layer portion is positioned on a long-
13 is a cross-sectional view showing an example of a state in which a long side upper layer capable of reversing the front and rear sides is positioned on a long side of a long side,
14 is a cross-sectional view showing another example of a state in which a long side upper layer capable of reversing the front and rear sides is positioned on a long side of a long side,
Fig. 15 is a plan view showing a substrate mounting table on which a shield ring according to a second embodiment of the present invention is mounted; Fig.
16 is a perspective view showing a first long-side member and a second long-side member constituting a long-side member of the shield ring,
17 is a perspective view showing a first short side member and a second short side member constituting a short side member of the shield ring,
18 is a partial vertical cross-sectional view showing a substrate mounting table on which a shield ring according to a third embodiment of the present invention is mounted;
19 is a horizontal sectional view taken along the line EE of Fig. 18,
20 is a plan view showing a substrate mounting table on which a shield ring according to a third embodiment of the present invention is mounted,
FIG. 21 is a view showing the lower surfaces of the first long side upper layer portion and the first short side upper surface portion which can be reversed in the plane in the third embodiment of the present invention,
22 is a view showing the lower surfaces of the second long side upper layer portion and the second short side upper layer portion which can be reversed in plane in the third embodiment of the present invention,
23 is a view showing bottom surfaces of the first long side upper layer portion and the first short side upper layer portion which can be reversed front and rear in the third embodiment of the present invention,
24 is a view showing the lower surfaces of the first long side upper layer portion and the first short side upper surface layer portions capable of inversion and in-plane reversal in the third embodiment of the present invention,
Fig. 25 is a plan view showing a structure of an upper layer of a shield ring according to a modification of the third embodiment of the present invention, and a side view showing a long side member and a short side member,
26 is a view for explaining the method of inverting the front and back of the first long-side upper layer portion and the second long-side upper layer in a shield ring according to a modification of the third embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

<Plasma Treatment Apparatus>

First, as an example of a plasma processing apparatus to which the present invention is applicable, a plasma etching apparatus will be described as an example.

1 is a cross-sectional view showing a plasma etching apparatus as a plasma processing apparatus to which the present invention is applicable.

1, this plasma etching apparatus 1 is configured as a capacitively coupled plasma etching apparatus for performing etching on a glass substrate (hereinafter simply referred to as "substrate") G for an FPD . Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), and the like.

The plasma etching apparatus 1 has a chamber 2 as a processing container for accommodating a substrate G as a substrate to be processed. The chamber 2 is made of, for example, aluminum whose surface is subjected to an alumite treatment (anodizing treatment), and is formed into a rectangular tube shape corresponding to the shape of the substrate G

A substrate mounting table 3 functioning as a lower electrode via an insulating plate 4 made of an insulating material is provided at the bottom of the chamber 2. The substrate mounting table 3 includes a substrate 5 made of metal, for example, aluminum, having a convex portion 5a formed at the center of the upper portion and a flange portion 5b around the convex portion 5a, An insulating shield ring 7 provided around the mounting portion 6 and the convex portion 5a of the base material 5 provided on the mounting portion 6a and having a mounting surface of the substrate G, And an insulating ring 8 provided around the flange portion 5b of the substrate 5. [

The mounting portion 6 has a ceramics sprayed coating 6a composed of insulating ceramics such as alumina and an electrode 6b buried in the ceramic sprayed coating 6a to constitute an electrostatic chuck. A DC power source 34 is connected to the electrode 6b via a feed line 33. The glass substrate G is electrostatically attracted by a DC voltage from the DC power source 34. [

A feeder line 12 for supplying a high frequency power is connected to the base material 5. A matching device 13 and a high frequency power source 14 are connected to the feeder line 12. From the high frequency power source 14, for example, a high frequency power of 13.56 MHz is supplied to the substrate 5 of the substrate stage 3. Thus, the substrate table 3 functions as a lower electrode.

A plurality of lift pins 10 for carrying out loading and unloading of the glass substrate G on the bottom wall of the chamber 2, the insulating plate 4 and the substrate table 3 can be raised and lowered And is inserted through. When the substrate G is conveyed, the elevating pins 10 are raised to the conveying position above the substrate stage 3 and are depressed in the substrate stage 3 at other times.

An upper portion of the chamber 2 is provided so that a showerhead 20 which functions as an upper electrode while supplying a process gas into the chamber 2 is opposed to the substrate table 3. The shower head 20 is provided with a gas diffusion space 21 for diffusing a process gas therein and a plurality of discharge holes 22 for discharging a process gas are formed on a surface facing the substrate stage 3 . This showerhead 20 is grounded and constitutes a pair of parallel flat plate electrodes together with the substrate table 3 so as to generate capacitively coupled plasma.

A gas introduction port 24 is provided on the upper surface of the showerhead 20. A gas supply pipe 25 is connected to the gas supply port 24. The gas supply pipe 25 is connected to a process gas supply source 28). An open / close valve 26 and a mass flow controller 27 are interposed in the process gas supply pipe 25. From the processing gas supply source 28, a processing gas for plasma processing, for example, plasma etching, is supplied. As the process gas, a halogen-based gas, an O 2 gas, an Ar gas, and the like can be used.

A plurality of exhaust pipes 29 (only two are shown) are connected to the bottom wall of the chamber 2. An exhaust device 30 is connected to the exhaust pipe 29 and a pressure regulating valve (not shown) is provided. The exhaust device 30 is provided with a vacuum pump such as a turbo molecular pump, and is configured to evacuate the inside of the chamber 2 and to evacuate it to a predetermined reduced-pressure atmosphere.

An inlet port 31 for loading and unloading the substrate G is formed in the side wall of the chamber 2 and a gate valve 32 for opening and closing the loading port 31 is provided. The substrate G is configured to be carried into or out of the chamber 2 by a transfer means not shown in the drawing.

The plasma etching apparatus 1 also includes a control unit 40 having a process controller including a microprocessor (computer) for controlling the respective components of the plasma etching apparatus 1. [ The control unit 40 includes a keyboard that executes an input operation such as a command input for managing the plasma etching apparatus 1 by an operator or a user who is made up of a display for visually displaying the operating state of the plasma etching apparatus 1, An interface and a control program for realizing various processes to be executed in the plasma etching apparatus 1 under the control of the process controller and a program for executing processing in each constituent unit of the plasma processing apparatus, And further has a storage unit. The processing recipe is stored in the storage medium in the storage unit. The storage medium may be a hard disk or a semiconductor memory built in a computer, or a portable medium such as a CD ROM, a DVD, or a flash memory. Further, the recipe may be appropriately transmitted from another apparatus, for example, via a dedicated line. If necessary, an arbitrary processing recipe is called from the storage unit by an instruction from the user interface and executed by the process controller, whereby the desired processing in the plasma etching apparatus is executed under the control of the process controller.

Next, the processing operation in the plasma etching apparatus 1 constructed as described above will be described.

First, the gate valve 32 is opened, the substrate G is carried into the chamber 2 through the loading / unloading port 31 by a transfer arm (not shown), and the electrostatic chuck of the substrate mounting table 3 And is mounted on the constituent mounting portion 6. Specifically, the lift pin 10 is projected upward to be positioned at a support position, the substrate G on the carrier arm is transferred to and removed from the lift pin 10, and then the lift pin 10 is lowered, (G) is mounted on a mounting portion (6) constituting an electrostatic chuck of a substrate mounting table (3).

Thereafter, the gate valve 32 is closed, the open / close valve 26 is opened, the process gas is supplied from the process gas supply source 28, and the flow rate of the process gas is adjusted by the mass flow controller 27, 25 and the gas inlet 24 into the gas diffusion space 21 inside the showerhead 20 and uniformly through the discharge hole 22 with respect to the substrate G, While controlling the inside of the chamber 2 to a predetermined pressure. Subsequently, a voltage is applied from the direct current power supply 34 to the electrode 6b of the mounting portion 6 to electrostatically adsorb the substrate G.

In this state, high-frequency power for plasma generation is supplied from the high-frequency power source 14 to the substrate 5 of the substrate stage 3 via the matching device 13, and the substrate stage 3 as a lower electrode, A high frequency electric field is generated between the showerhead 20 as a plasma processing gas to generate a plasma of the processing gas and plasma processing is performed on the substrate G by the plasma.

&Lt; First Embodiment of Shield Ring &

Next, a first embodiment of a shield ring used in the substrate mounting table 3 will be described with reference to Figs. 2 to 14. Fig.

Fig. 2 is a cross-sectional view showing a substrate table on which a shield ring according to a first embodiment of the present invention is mounted, and Fig. 3 is a plan view thereof.

The shield ring 7 of the present embodiment has a two-layer structure of a lower layer 72 fixed to the base material 5 and an upper layer 71 provided on the lower layer 72, And two short side members 74 corresponding to the short side of the substrate G are combined to form a frame shape. The upper layer 71 has a function of protecting the lower layer 72 from being etched and is formed thinner than the lower layer 72.

4A, the long side member 73 is constituted by a long side upper layer portion 711 which becomes a part of the upper layer 71 and a long side lower layer portion 721 which becomes a part of the lower layer 72 And the whole is in the form of a rectangular parallelepiped. As shown in Fig. 4B, the short side member 74 has a short side upper layer portion 712 which becomes a part of the upper layer 71 and a lower side short side layer portion 722 which becomes a part of the lower layer 72 And has a rectangular parallelepiped shape as a whole.

The long side members 73 and the short side members 74 have the same length and the two long side members 73 and the two short side members 74 are rotationally symmetric with respect to the center line of the substrate stage 3 Respectively.

The lower side lower layer portion 721 of the long side member 73 and the short side side lower side portion 722 of the short side member 74 are fixed to the base material 5 by screws to constitute the lower layer 72, The upper side upper layer portion 711 and the upper side short side layer 712 are positioned on the lower side short side portion 722 to constitute the upper layer 71. [

The long side upper layer portion 711 and the short side upper layer portion 712 are each configured to be reversible. As an aspect of reversing the long side upper layer portion 711 and the short side upper layer portion 712, it is possible to mention that the top face A and the bottom face B are reversed in the front and back directions as shown in Fig. In such a case, the long side upper layer portion 711 and the short side upper layer portion 712 are axially symmetric with respect to the central axis O1 in the X direction (longitudinal direction) or the Y axis direction (width direction) . In addition, as shown in Fig. 6, the outer surface C and the outer surface D may be inverted in-plane. In such a case, the long-side upper layer portion 711 and the short-side upper layer portion 712 are axially symmetrical with respect to the central axis O3 in the Z direction (thickness direction) in Fig. It is also possible that both front and back inversion and in-plane inversion are possible.

The shield ring 7 is made of insulating ceramics such as alumina (Al 2 O 3 ) having high plasma resistance. The upper layer 71 and the lower layer 72 may be made of the same material or different materials. When the upper layer 71 is made of a different material, a material which is less expensive than the lower layer 72 is used for the upper layer 71 because the upper layer 71 is a member intended to be consumed by plasma. Further, the upper layer 71 may be used as a sacrificial material made of the same material as the etching target layer of the substrate G to reduce the loading effect at the substrate end. An example of such a case is that the upper layer 71 is composed of silicon nitride and the lower layer 72 is composed of alumina when the etching target layer is silicon nitride (SiN).

Frequency power is applied to the base material 5 of the substrate mounting table 3 and the substrate G mounted on the substrate mounting table 3 is subjected to plasma treatment Ions in the plasma are drawn into the substrate G by the high frequency bias, but ions in the plasma also act in the vicinity of the substrate G of the shield ring 7. 7A and 7B, the vicinity of the substrate G on the surface of the shield ring 7 is eroded by the plasma to form the consumable portion 80 . Conventionally, when such a consumable portion exceeds a permissible size or depth, the shield ring 7 has been replaced. On the other hand, in the present embodiment, the shield ring 7 has a two-layer structure of the upper layer 71 and the lower layer 72, and the long-side member 73 and the short-side member 74 constituting the shield ring 7 The upper side upper side 711 and the lower side lower side 721 and the lower side upper side 712 and the lower side lower side 722 Since the short-side upper layer portion 712 can be reversed, the portion where wear is not caused can be positioned near the substrate on the surface of the shield ring 7, and the life of the shield ring 7 can be prolonged.

For example, when the long side upper layer portion 711 and the short side upper layer portion 712 are reversible, when the consumable portion 80 reaches the limit size or depth, the long side upper layer portion 711, The long side upper layer portion 711 and the short side upper layer portion 712 can be further used by inverting the short side upper layer portion 712 (only the upper side upper layer portion 711 is shown) It can be extended twice.

9, when the consumable portion 80 reaches the limit size or depth, when the long side upper layer portion 711 and the short side upper layer portion 712 are in-plane reversible, the long side upper layer portion 711 and the short side The long side upper layer portion 711 and the short side upper layer portion 712 can be further used by rotating the upper layer portion 712 (only the long side upper layer portion 711 is shown) It can be extended to double.

When the long side upper layer portion 711 and the short side upper layer portion 712 are capable of both front / rear inversion and in-plane inversion, for example, as shown in FIG. 10, the long side upper layer portion 711 is taken as an example. In other words, when the consumable portion 80 reaches the limit size or depth by the first use, as shown in Fig. 10 (a), in-plane inversion (first inversion) do. When the consumable part 80 reaches the limit size or depth by the second use, it is provided for the third use by performing front / rear inversion (second inversion) as shown in Fig. 10 (b). When the consumable portion 80 reaches the limit size or depth by the third use, it is provided for the fourth use by in-plane inversion (third inversion) as shown in Fig. 10 (c). Thus, the service life can be extended four times. The same applies to the short side upper layer portion 712.

In the case where the concave portion for screwing the shield ring to the base material is formed on the upper surface of the shield ring as in Patent Document 2, the surface of the shield ring has a concavo-convex shape and particles are liable to be generated by the plasma The long side lower layer portion 721 and the short side lower side portion 722 constituting the lower layer 72 are screwed to the base material 5 and the long side upper layer portion 711 constituting the upper layer 71 and the short side Since the upper layer portion 712 is mounted, the surface of the shield ring 7 can be made flat, and generation of particles can be suppressed. 11, on the upper surface of the long side lower layer portion 721 constituting the lower layer 72, a concave portion 75 is formed by spot facing, for example, And a threaded hole 76 penetrating to the base material 5 is formed on the bottom of the concave portion 75. A long side lower layer portion 721 is formed on the base material 5 by screws 77 Is fixed. By mounting the long side upper layer portion 711 on the long side lower layer portion 721, the concave portion 75 is covered on the long side upper layer portion 711 and the surface of the shield ring 7 is covered with the flat long side The surface of the upper layer 711 can be used. Therefore, generation of particles can be suppressed, and productivity can be improved.

Further, positioning of the long-side upper layer portion 711 and the short-side upper layer portion 712 can be performed using positioning pins. 12, a positioning pin 78 is provided so as to protrude upward on the upper surface of the longer side lower layer portion 721 and a lower surface of the lower surface of the longer side upper layer portion 711 A positioning hole 79 is provided in the portion corresponding to the positioning pin 78 of the long side upper layer portion 78 by spot pacing and the positioning pin 78 is inserted into the positioning hole 79 711). The positioning pin 78 is provided at two positions in the longitudinal direction end portion of the long side lower layer portion 721. When positioning the long side upper layer portion 711 in the in-plane direction, Even when the use hole 79 is provided at a position away from the center line and the inward inversion of the long side upper layer portion 711 is made so that the positioning hole 79 is located at the position corresponding to the positioning pin 78, And the crystal holes 79 are arranged symmetrically on the lower surface of the long side upper layer portion 711. [ 13, positioning holes 79 are provided at positions corresponding to the lower surface of the upper surface of the long side upper layer portion 711. In this case, So that the positioning hole 79 is provided at the portion corresponding to the positioning pin 78. [ In this case, in order to suppress the influence of the plasma extremely, it is preferable that the positioning hole 79 on the surface of the long side upper layer portion 711 is closed by the hole closing member 81 made of the same material as the long side upper layer portion 711 desirable. As shown in Fig. 14, instead of forming the positioning holes 79 on the front and back surfaces, the positioning holes 82 for the through holes may be formed symmetrically. In such a case, at least the surface portion of the positioning hole 82 is closed with the hole closing member 81 so that the plasma does not reach the lower layer 72 through the positioning hole 82 of the through hole It is essential. Also, as shown in the figure, it is preferable that the back side of the unused positioning holes 82 is also closed with the hole closing members 81. [ The same applies to the short side member 74.

&Lt; Second Embodiment of Shield Ring &

Next, a second embodiment of the shield ring used in the substrate mounting table 3 will be described with reference to Figs. 15 to 17. Fig.

15 is a plan view showing a substrate table on which a shield ring according to a second embodiment of the present invention is mounted.

The shield ring 7 of the second embodiment shows an example in which the long-side member 73 and the short-side member 74 are divided into two parts. The long side member 73 and the short side member 74 are additionally provided in the present embodiment so that the length of one side of the substrate G is about 3 m so that the shield ring 7 becomes extremely large. 2.

The long side member 73 is divided into the first long side member 73a and the second long side member 73b in the shield ring 7 of the present embodiment and the short side member 74 is divided into the first short side member 74a And a second short side member 74b.

16A, the first long-side member 73a is composed of a first long-side upper layer portion 711a and a first long-side lower layer portion 721a, and the first long-side member 73a has a substantially rectangular parallelepiped shape have. 16B, the second long-side member 73b is constituted by the second long-side upper layer portion 711b and the second long-side lower layer portion 721b, and the entirety of the second long-side member 73b has a rectangular parallelepiped shape have.

As shown in Fig. 17 (a), the first short side member 74a is composed of a first short side upper layer portion 712a and a first short side lower side portion 722a, and the whole is a rectangular parallelepiped. 17 (b), the second short side member 74b is composed of the second short side upper layer portion 712b and the second short side lower side layer portion 722b, and the entirety thereof is a rectangular parallelepiped shape have.

It is preferable that the first long side member 73a and the second long side member 73b and the first short side member 74a and the second short side member 74b have the same length. It is thereby possible to replace the first long side member 73a and the second long side member 73b and the first short side member 74a and the second short side member 74b.

The first long side lower portion 721a of the first long side member 73a, the second long side lower side portion 721b of the second long side member 73b, the first short side side lower portion 722a of the first short side member 74a, The second lower short side portion 722b of the two short side members 74b is secured to the base material 5 by screws to constitute the lower layer 72. The first long side lower layer portion 721a, the second long side lower layer portion 721b, The first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a and the second short side upper layer portion 722b are formed on the first short side lower portion 722a and the second short side lower portion 722b, 712b are positioned so as to constitute the upper layer 71.

The first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a, and the second short side upper layer portion 712b are each configured to be reversible. They can be constructed so that they can be inverted in the front or rear direction exactly the same as the long side upper layer portion 711 and the short side upper layer portion 712 of the first embodiment, and can be configured to be capable of both front and rear inversion and in-plane inversion.

As described above, in the second embodiment, the first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a, and the second short side upper layer portion 712b are reversed in this manner, The life of the shield ring 7 can be doubled or quadrupled as in the case of the first embodiment.

The first long side lower layer portion 721a, the second long side lower layer portion 721b, the first short side lower side portion 722a and the second short side lower side portion 722b formed with concave portions for fixing the screws are fixed to the first long side upper layer portion 711a The second long side upper layer 711b, the first short side upper layer 712a and the second short side upper layer 712b, the surface of the shield ring 7 can be a flat surface free from unevenness. Therefore, generation of particles can be suppressed and productivity can be improved.

The positioning of the first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a and the second short side upper layer portion 712b is performed by positioning the long side upper layer portion 711 and the second long side upper layer portion 711b of the first embodiment, It can be performed in exactly the same manner as the short side upper layer portion 712.

&Lt; Third Embodiment of Shield Ring &

Next, a third embodiment of the shield ring used in the substrate mounting table 3 will be described with reference to Figs. 18 to 24. Fig.

In the present embodiment, an example in which the influence of thermal deformation of the shield ring is considered will be described. The thermal expansion difference between the upper layer 71 and the lower layer 72 of the shield ring 7 is taken into account not only in the thermal expansion difference between the base member 5 and the shield ring 7 but also in the present embodiment.

Fig. 18 is a partial longitudinal sectional view showing a substrate mounting table on which a shield ring according to a third embodiment of the present invention is mounted, Fig. 19 is a horizontal sectional view along the line EE in Fig. 18, Fig. 6 is a plan view showing a substrate mounting table on which a shield ring according to Fig.

The shield ring 7 of the third embodiment is similar to the second embodiment except that the long side member 73 is divided into a first long side member 73a and a second long side member 73b, Is divided into a first short side member 74a and a second short side member 74b. 19 shows the state of the lower layer 72 of the shield ring 7, one end P of the long-side member 73 (the end of the first long-side member 73a) is restrained to the base 5, The other end Q (the end of the second long-side member 73b) of the member 73 is a free end. One end R of the short side member 74 (the end of the first short side member 74a) is also constrained to the base member 5 and the other end S (the second short side member 74b ) Is a free end. The first long side lower layer portion 721a, the second long side lower layer portion 721b, the first short side lower side portion 722a and the second short side side bottom portion 722b constituting the lower layer 72 are fixed to the base material 5). The screw fixing section 90 includes a recess 91 formed by spot faceting for accommodating the head of the screw and a screw hole 92 formed by an elongated hole penetrating to the bottom of the screw hole 92, 5). Since the screw holes 92 are elongated holes, thermal expansion in the longitudinal direction can be allowed. The first long side lower layer portion 721a and the second long side lower layer portion 721b have a superposition structure in which they are vertically overlapped and connected to each other by a connecting member 95. Similarly, the first and second short side portions 722a and 722b have the same structure and are connected by a connecting member 95 in the same manner. The first long side lower layer portion 721a and the second long side lower layer portion 721b constituting the long side member 73 are thermally expanded toward the other end Q side with respect to the one end P when the heat is applied, When you return to the original position. The first short side lower portion 722a and the second short side lower portion 722b constituting the short side member 74 are thermally expanded toward the other side S with respect to the first end R when heat is applied, When you return to the original position. Therefore, generation of gaps between the substrate 5 and the shield ring 7 due to thermal expansion can be suppressed.

The gap between the second lower side lower layer portion 721b and the first lower side lower layer portion 722a corresponding to each corner of the shield ring 7 and between the second lower side lower layer portion 722b and the first longer side lower layer portion 721a, And has a superposition structure in which upper and lower layers are overlapped in the same manner as between the lower layer portion 721a and the second longer side lower layer portion 721b and between the first lower side lower layer portion 722a and the second lower side lower layer portion 722b. By adopting such a superposed structure, the influence of the gap due to the thermal expansion in the longitudinal direction is suppressed.

In the vicinity of the one end P of the first long side lower layer portion 721a and at the inner side position of the longitudinal direction center line near the one end R of the first short side lower side portion 722a, A positioning pin 96 for positioning the long side upper layer portion 711a and the first short side upper layer portion 712a is provided. The first long side upper layer portion 711a and the second long side upper layer portion 711b are formed at positions corresponding to the positioning pins 96 at the other end of the first long side lower layer portion 721a and the other end of the first short side lower layer portion 722a, The thermal deformation follow-up pin 97 following the thermal deformation of the first short side upper layer portion 712a is provided. Both ends of the second long side lower layer portion 721b and the second short side lower side layer portion 722b are provided at positions corresponding to the positioning pins 96 so as to protrude upward from the front surface of the second long side upper layer portion 711b, The thermal deformation follow-up pin 97 which follows the thermal deformation of the two short-side upper layer portion 712b is provided.

The first long side upper layer portion 711a and the second long side upper layer portion 711b and the first short side upper layer portion 712a and the second short side upper layer portion 712b are connected by the connecting member 101 . The first long side upper layer portion 711a and the first short side upper layer portion 712a are inserted into the positioning pin 96 and the thermal deformation follow pin 97 so that one end side is positioned, It is possible to follow the thermal deformation. In addition, the second long side upper layer portion 711b and the second short side upper layer portion 712b are inserted only with the thermal deformation follow-up pin 97 so that both ends can follow the thermal deformation.

Therefore, when the upper layer 71 and the lower layer 72 of the shield ring 7 are made of different materials and there is a difference in thermal expansion, thermal deformation due to the difference in thermal expansion between them can be suppressed.

21, in order to enable inversion of the first long side upper layer portion 711a and the first short side upper layer portion 712a in the in-plane direction, The thermal deformation follow-up holes 99 consisting of the long holes corresponding to the holes 98 and the thermal deformation follow-up pins 97 are formed by spot-pacing at two point-symmetrical positions. As a result, even when the first long side upper layer portion 711a and the first short side upper layer portion 712a are in-plane inverted, the positioning pin 96 is inserted into the positioning hole 98, Is inserted into the thermal strain follow-up hole 99 so that the first long side upper layer portion 711a and the first short side upper layer portion 712a can be positioned so as to follow the thermal strain in the longitudinal direction.

In addition, in the case where the second long side upper layer portion 711b and the second short side upper layer portion 712b are allowed to be reversible in the in-plane direction, as shown in Fig. 22, And two holes for heat distortion follow-up 99 formed by long holes are formed by two spot pacing, and in addition to the position of the line symmetry with respect to these two heat distortion following holes 99, (99). Thereby, even when the second long side upper layer portion 711b and the second short side upper layer portion 712b are inverted in plane, the thermal deformation follow-up pin 97 is inserted into the thermal deformation follow-up hole 99, The first short side upper layer portion 711b and the second short side upper layer portion 712b may follow the thermal deformation in the longitudinal direction.

When the first long side upper layer portion 711a and the first short side upper layer portion 712a are to be reversed in the front and rear directions as shown in Fig. 23, the positioning holes 98 and the thermal strain follow- Are formed on both the upper surface and the lower surface so as to come to the same position when inverted.

In order to make both the first long side upper layer portion 711a and the first short side upper layer portion 712a possible to perform both front and rear inversion and in-plane inversion, as shown in Fig. 24, 98 and the thermal deformation follow-up hole 99 are formed at two point symmetrical positions and the positioning holes 98 and the thermal deformation follow-up holes 99 are formed in positions 2 Respectively.

23 and 24, the holes existing on the surfaces of the first long side upper layer portion 711a and the first short side upper layer portion 712a are closed by a hole closing member made of the same material in order to extremely suppress the influence of the plasma. .

In the case where the second long side upper layer portion 711b and the second short side upper layer portion 712b are allowed to be reversed in the front and rear directions and the front and rear inversion and in-plane reversing are enabled, the positioning holes 98 in FIGS. The strain follower hole 99 may be used.

As described above, in the third embodiment, not only the gap formation due to the difference in thermal expansion between the base member 5 and the shield ring 7 can be suppressed, but also the upper layer 71 and the lower layer 72 of the shield ring 7, It is possible to suppress the thermal deformation due to the difference in thermal expansion of

Since the first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a and the second short side upper layer portion 712b can be reversed, 7) can be doubled or quadrupled.

The first long side lower layer portion 721a, the second long side lower layer portion 721b, the first short side portion 722a, and the second short side portion 721b, which are formed on the surface of the screw fixing portion 90, Since the lower layer portion 722b is covered with the first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a and the second short side upper layer portion 712b, Can be made as a flat surface without concavities and convexities. Therefore, generation of particles can be suppressed and productivity can be improved.

Next, a modified example of the third embodiment will be described.

25 is a plan view showing the configuration of the upper layer 71 of the shield ring 7 according to the modification of the third embodiment, and is a side view showing the long side member and the short side member.

In the above example, the first long side lower layer portion 721a, the second long side lower layer portion 721b, the first short side lower side portion 722a, and the second short side side bottom portion 722b constituting the lower layer 72 are superimposed The first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a and the second short side upper layer portion 712b constituting the upper layer 71 are formed in an overlapping structure For example. As described above, the upper layer 71 also has a superimposed structure, so that the influence of the gap due to the thermal expansion in the longitudinal direction can be more effectively suppressed.

That is, in the present modified example, the first long side upper layer portion 711a, the second long side upper layer portion 711b, the first short side upper layer portion 712a, and the second short side upper layer portion 712b constituting the upper layer 71, And has a flange portion 710 of the same shape. The first long side upper layer portion 712a and the second long side upper layer portion 711b have the same length and the same shape and are arranged so as to be reversed from each other. The first long side upper layer portion 711a and the second long side upper layer portion 711b are adjacent to each other and the first long side upper layer portion 711a and the second short side upper layer portion 712b are adjacent to each other And the adjacent portions of the first short side upper layer portion 712a and the second long side upper layer portion 711b form a superposition structure by overlapping the flange portions 710 vertically. 25, connection members between the first long-side upper layer portion 711a and the second long-side upper-layer portion 711b and between the first short-side upper-layer portion 712a and the second short-side upper-layer portion 712b are omitted.

As shown in Fig. 26, for example, by inverting the first long side upper layer 711a in the front and back directions, the shape of the second long side upper layer 711b It is possible to cope with the inversion of the front and rear sides by replacing the first long side upper layer portion 711a and the second long side upper layer portion 711b. Similarly, the first short side upper layer portion 712a and the second short side upper layer portion 712b can correspond to the front / rear inversion.

In addition, the present invention is not limited to the above-described embodiment, but can be modified in various ways. For example, although plasma etching has been described as an example of plasma processing in the above embodiment, the plasma processing is not limited to plasma etching, and other plasma processing such as plasma CVD may be used.

The plasma processing apparatus of the capacitively coupled type is exemplified in the above embodiment, but it is not limited to this, as long as high-frequency power is applied to the substrate mount table, plasma is generated by another method such as inductively coupled plasma or microwave plasma May be used.

In addition, the shield ring is divided into long and short sides, and the long and short sides are divided into two. However, the present invention is not limited thereto.

In the above embodiment, the present invention is applied to a glass substrate for an FPD. However, the present invention is not limited to this, and it goes without saying that the present invention can be applied to other substrates such as a semiconductor substrate.

1: Plasma etching apparatus (plasma processing apparatus)
2: chamber (processing vessel) 3: substrate mounting table
4: insulating plate 5: substrate
6: mounting part 7: shield ring
14: High-frequency power source 20: Shower head
25: process gas supply pipe 28: process gas supply source
29: Exhaust pipe 30: Exhaust device
31: Loading / unloading port 40:
71: upper layer 72: lower layer
73: Long side member 73a: First long side member
73b: second long side member 74: short side member
74a: first short side member 74b: second short side member
75: recess 76: screw hole
77: screw 78: positioning pin
79: positioning hole 80: consumable part
81: hole closing member 90: screw fixing portion
91: recess 92: screw hole
93: screws 95, 101: connecting member
96: positioning pin 97: thermal deformation follower pin
98: hole for positioning 99: hole for thermal deformation
711: long side upper layer part 711a: first long side upper layer part
711b: second long side upper layer portion 712a: first short side upper layer portion
712b: second short side upper layer portion 721a: first long side lower layer portion
721b: second long side lower layer portion 722a: first short side lower layer portion
722b: second lower short side G:

Claims (13)

A substrate mounting table having a substrate made of metal on which a substrate is mounted in a chamber for performing a plasma process on a substrate to which high frequency power is applied and a substrate mounting portion provided thereon, In the shield ring,
Wherein each of the constituent members has a lower layer portion mounted on the substrate and an upper layer portion covering the lower layer portion, wherein the upper layer portion is reversibly provided
Shield ring. The method according to claim 1,
Characterized in that it is made of insulating ceramics
Shield ring. 3. The method according to claim 1 or 2,
Wherein the upper layer portion and the lower layer portion are made of the same material
Shield ring. 3. The method according to claim 1 or 2,
Wherein the upper layer portion and the lower layer portion are made of different materials
Shield ring. 5. The method according to any one of claims 1 to 4,
Wherein the upper layer portion is provided so as to be capable of inversion of surface inversion or in-plane inversion, or inversion in inversion and in-plane inversion
Shield ring. 6. The method according to any one of claims 1 to 5,
Wherein the lower layer portion of the constituent member is screwed to the substrate and the upper layer portion is provided to cover the screwed portion
Shield ring. 7. The method according to any one of claims 1 to 6,
Wherein the lower layer portion of the constituent member has a positioning pin for positioning the upper layer portion, the upper layer portion has a positioning hole into which the positioning pin is inserted, and the upper layer portion, when performing the predetermined inversion, And another positioning hole is formed at a position where the positioning pin is inserted
Shield ring. 8. The method according to any one of claims 1 to 7,
Wherein the substrate has a rectangular shape, and the shield ring has a frame shape
Shield ring. 9. The method of claim 8,
Wherein the constituent member is a long side member constituting a long side of a frame and a short side member constituting a short side
Shield ring. 9. The method of claim 8,
Wherein the constituent member is further divided into a plurality of long side members constituting a long side of a frame and a short side member constituting a short side
Shield ring. 11. The method according to claim 9 or 10,
And the lower layer members of the long side member and the short side member have one end confined and the other end free and configured to permit thermal expansion of the other end side with respect to the one end by heat
Shield ring. 12. The method of claim 11,
Wherein the lower layer portions of the long side member and the short side member have a positioning pin for positioning the upper layer portion and a thermal deformation follower pin adapted to follow thermal deformation and the upper layer portion of the long side member and the short side member are inserted Wherein the positioning pin and the thermal deformation follow-up pin have holes for positioning pins and an elongated hole-shaped thermal deformation follow-up hole into which the thermal deformation follow-up pin is inserted, and when the predetermined inversion is performed, And another hole for positioning and another hole for thermal deformation follow-in are formed at a position
Shield ring. A substrate mounting table for mounting a substrate in a chamber for performing a plasma process on the substrate,
A metal base to which high-frequency power is applied,
A substrate mounting portion provided on the substrate;
And an insulating shield ring disposed around the substrate and the substrate mounting portion, wherein the shield ring has the configuration according to any one of claims 1 to 12
Substrate mount.
KR1020150189584A 2015-01-06 2015-12-30 Shield ring and substrate mounting table KR101798733B1 (en)

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CN105762052A (en) 2016-07-13

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