KR20100084014A - Semiconductor package and the fabrication method thereof - Google Patents

Abstract

PURPOSE: A semiconductor package and a method for manufacturing the same are provided to prevent the damage of patterned copper thin film layer by forming a blind via hole and performing a metal surface treatment before the patterned copper thin film is formed. CONSTITUTION: A substrate(101) includes a polymer film(102) and a patterned copper thin film layer(103). A blind via-hole(108) is formed in the substrate. An adhesive(104) is interposed between the polymer film and the copper thin film layer. A semiconductor chip(105) is arranged on the copper thin film layer. A chip pattern layer(106) is formed on the bottom side of the semiconductor chip. The chip pattern layer is electrically contacted with the patterned copper thin film layer.

Description

Semiconductor package and manufacturing method thereof

The present invention relates to a semiconductor package, and more particularly, to a method of manufacturing a blind via hole for securing a chip interconnection region of a substrate for a semiconductor package, an interconnection region of the substrate, a semiconductor package having an improved structure, and And a method for producing the same.

Conventional semiconductor packages for taped auto bonding ball grid arrays (TAB BGAs) secure chip interconnection areas of substrates and substrate interconnection areas of external circuit boards such as motherboards. To form a blind via hole to be formed by the following processing method.

The method of processing blind via holes using mechanical tool punching is performed by punching to form a hole including a ball pad hole in an adhesive-formed polymer film, removing moisture, and then removing the polymer film. The copper thin film layer is laminated on one surface of and is cured.

The pretreatment is then performed, a resist layer is formed on the polymer film, exposed and developed, and the ball pad mask is taped, i.e., back coated. Next, the copper thin film layer is etched, the resist layer is stripped, a tin immersion layer is formed on the copper pattern layer, and then the tin emulsion layer is cured. Then, remove the ball pad mask tape, tape the mask to a copper pattern layer on which a tin emulsion layer is formed for chip interconnection, and plate the ball pad area with a metal suitable for interconnecting with an external circuit board, such as a motherboard, or Metal surface treatment (ie, finish) forming organic solderability presertvative (OSP) is performed, and the copper pattern mask tape is separated.

However, the conventional method for processing blind via holes using mechanical mold punching requires mechanical molds for manufacturing blind via holes for each product, which increases manufacturing costs associated with manufacturing mechanical molds and takes a long time to manufacture the molds. Thus, it is disadvantageous in producing small quantities of various varieties.

In addition, a back coating process for preventing the ball pad portion etching during pattern formation, a resist coating process for preventing the ball pad portion plating during the metal surface treatment of the chip bonding portion, a plating resist stripping process for removing the plating resist, The manufacturing process is complicated because a coating (or masking) process for protecting the ball pad region metal surface treatment layer and a similar process such as resist stripping (or detapping) for removing the resist are overlapped.

In addition, there is a high possibility that the interlayer lifting problem between the adhesive and the polymer film may occur due to the mechanical impact (i.e., shear force) that cuts the material during mechanical mold punching.

In the method of processing a blind via hole using a laser drill, punching is performed and pretreatment is performed to form an exposure hole for alignment of a substrate for alignment of a substrate during exposure to a multilayer laminate. The resist layer is then coated, exposed and developed, the copper film is etched and the resist layer stripped.

Next, the adhesive mask is taped, a via hole is formed using a CO ₂ laser drill, a desmear treatment, that is, impurities are removed, a metal surface treatment is applied to the ball pad, and the adhesive mask tape is applied. Will be separated. The ball pad mask is then taped, the tin is emulsified, then the tin is cured and the ball pad mask tape is separated.

By the way, the blind via hole processing method using a laser drill has a problem of low productivity of the CO ₂ laser drill. In addition, in the desmear process performed after the CO ₂ laser drill, the desmear chemicals cause damage to the copper pattern layer in which the tin emulsion layer is formed for the chip interconnection and the adhesive formed to deposit the copper thin film layer on the polymer film. Done. To this end, the process order is changed or a new process is additionally required.

In addition, when the adhesive force of the masking tape is weak, the desmear solution penetrates, causing damage to the adhesive. On the contrary, when the adhesive force of the masking tape is strong, damage to the copper pattern layer in which the tin emulsion layer is formed for chip interconnection during tape separation occurs.

In addition, since the smear generated during the CO ₂ laser drill process is not easily removed, there is a high risk of poor quality.

In addition, the equipment cost of the CO ₂ laser drill is quite expensive.

The present invention is to solve the above problems, the manufacturing process by forming a chip interconnection region of the semiconductor package substrate and a blind via hole for securing the solder ball interconnection region of the substrate using a specific etching solution The invention relates to a method of forming a blind via hole which is simplified and has improved production efficiency, a semiconductor package having an improved structure, and a method of manufacturing the same.

In order to achieve the above object, a method of manufacturing a semiconductor package according to an aspect of the present invention,

Preparing a polymer film and a substrate on which a metal thin film layer is stacked on the polymer film;

Patterning the resist layer on the substrate to form blind via holes;

Taping with a ball pad mask to cover the blind via hole and then patterning the metal thin film layer; And

And separating the resist layer and the ball pad mask from the substrate.

In the preparing of the substrate,

The polymer film is a polyimide film, the metal thin film layer is characterized in that the copper thin film layer.

In addition, in the step of forming the blind via hole,

Stacking a first resist layer on a first side of the substrate and stacking a second resist layer on a second side opposite to the first side;

Exposing and developing the first resist layer and the second resist layer; And

And etching the region of the polymer film exposed to the portion where the second resist layer is formed to form the blind via hole.

In addition, in the step of etching the polymer film,

The etching solution is a strong alkali solution of pH 10 or more of non-hydrazine type,

It consists of a C4 or less water-soluble aliphatic amino alcohol which has an amino group, an imino group, and a hydroxyl group in a molecule | numerator, and aqueous tetraalkyl ammonium hydroxide solution.

A semiconductor package according to another aspect of the present invention,

A substrate on which a polymer film and a patterned metal thin film layer are stacked on the polymer film, and a plurality of blind via holes are formed;

A semiconductor chip electrically connected to the metal thin film layer;

And a circuit board electrically connected by solder balls connected to the metal thin film layer through the blind via hole.

The blind via hole is a strong alkali-based solution having a pH of 10 or more of a non-hydrazine type, and the polymer is formed by an etching solution comprising a water-soluble aliphatic amino alcohol having 4 or less carbon atoms having an amino group or an imino group and a hydroxyl group in a molecule, and an aqueous tetraalkyl ammonium hydroxide solution. The film is formed by etching.

In addition, on the first surface of the polymer film, an inner surface of the patterned metal thin film layer contacts the blind via hole, and a solder ball filled in the blind via hole is electrically connected to the metal thin film layer.

The blind via hole is opened on the second surface of the polymer film, and solder balls formed through the blind via hole are exposed to the outside, and are electrically connected to the circuit board.

In addition, the polymer film comprises a polyimide film.

As described above, the semiconductor package of the present invention and its manufacturing method can obtain the following effects.

First, as the resist layer of the substrate is formed, the resist layer of the polymer film may be simultaneously formed in the process of forming an etching resist layer for patterning the copper thin film layer without additional process.

Second, before the patterned copper thin film layer is formed in the chip interconnection area, blind via holes are formed to perform metal surface treatment, thereby damaging the patterned copper thin film layer which may be caused by chemicals in the metal surface treatment process. Can be prevented in advance.

Third, by implementing a continuous process of reel to reel, it is possible to maximize the productivity and significantly reduce the manufacturing cost.

Fourth, as the number of processes is reduced, manufacturing costs can be reduced by minimizing the use of subsidiary materials such as expensive mask tapes.

Fifth, in spite of the design trend of the semiconductor package, the number of ball pads is increasing more and more, it is not necessary to manufacture a complex structure of the fouling, so that it is possible to manufacture a product in a short time and to produce a small quantity of various products.

Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings.

FIG. 1 illustrates a semiconductor package 100 for TBI business according to an embodiment of the present invention.

Referring to the drawing, the semiconductor package 100 is provided with a substrate 101. The substrate 101 is preferably made of a material such as flexible copper clad laminates (FCCL). In the present embodiment, the substrate 101 includes a polymer film 102 having flexibility such as polyimide and a copper thin film layer 103 patterned on one surface of the polymer film 102. The adhesive 104 is interposed between the polymer film 102 and the copper thin film layer 103. Meanwhile, a tin emulsion layer 205 may be further formed on the outer surface of the copper thin film layer 103.

The semiconductor chip 105 is disposed on the copper thin film layer 103. The chip pattern layer 106 is formed on the bottom surface of the semiconductor chip 105 to face the copper thin film layer 102. The chip pattern layer 106 is electrically connected to the patterned copper thin film layer 103 to form a chip interconnection region 107.

A plurality of blind via holes 108 are formed in the polymer film 102. The blind via hole 108 is formed to penetrate in the thickness direction of the polymer film 102. The portion where the blind via hole 108 is formed is in contact with the copper thin film layer 103.

That is, the first surface 103a of the copper thin film layer 103 is attached onto the first surface 102a of the polymer film 102 by the adhesive 104. A blind via hole 108 is formed in the polymer film 102 in contact with the first surface 103a of the copper thin film layer 103 along its thickness direction. The blind via hole 108 removes the adhesive 104 toward the first surface 102a of the polymer film 102 to contact the first surface 103a of the copper thin film layer 103. It is open toward the second side 102b of 102.

At this time, a flux layer, preferably an organic solder preservative (OSP) 109, is formed on a surface of the first surface 103a of the copper thin film layer 103 in contact with the blind via hole 108. . The organic solder preservative 109 prevents oxidation of the first surface 103a of the copper thin film layer 103 and allows the bonding to be complete when soldering. Instead of the organic solder preservative 109, a metal plating layer such as a gold alloy plating layer or a nickel alloy plating layer may be used as the flux layer.

Solder balls 110 are formed in the blind via holes 108. The solder ball 110 is filled in the blind via hole 108 and is exposed in a spherical shape toward the second surface 102b of the polymer film 102. The solder ball 110 is electrically connected to the copper thin film layer 103.

The solder balls 110 exposed to the outside of the second surface 102b of the polymer film 102 are electrically connected to an external circuit board 111 such as a motherboard to form a substrate interconnection region 112. .

Accordingly, in the semiconductor chip 105, the chip pattern layer 106 formed at the lower portion of the semiconductor chip 105 is electrically connected to the copper thin film layer 103 of the substrate 101, and the copper thin film layer 103 is a blind via hole of the polymer film 102. It is electrically connected with the solder ball 110 formed through the 108, and the solder ball 110 is electrically connected with the external circuit board 111, and forms the electrical connection path | route.

The method for manufacturing the TBI VISAI semiconductor package 100 having the above structure will be described in detail step by step.

2A to 2L illustrate a state after fabrication of the tie-by-visible semiconductor package 100 of FIG. 1 step by step, and FIG. 3 shows the tie-by-visible semiconductor package 100 of FIG. 1. It is a flowchart showing the manufacturing process.

First, as shown in FIG. 2A, the substrate 101 is prepared. The substrate 101 is a copper thin film layer 103 is laminated on one surface of the polymer film 102 having the same flexibility as the polyimide film via the adhesive 104. (S10)

Subsequently, as shown in FIG. 2B, an exposure hole 201 is formed in the substrate 101 to align the substrate 101 during exposure. The exposure hole 101 penetrates along the thickness direction of the substrate 101 in the edge region of the substrate 101 through a punching process (S20).

Next, after performing a pretreatment process to remove the foreign matter (S30), as shown in Figure 2c, a resist layer such as a dry film resist layer (dry film resist layer) on both sides of the substrate 101 ). That is, a first resist layer 202 is laminated on the surface of the copper thin film layer 103 on the first surface 102a side of the polymer film 102 and is opposite to the first surface 102a. On the 102b side, a second resist layer 203 is stacked. The first resist layer 202 and the second resist layer 203 are alkali resistant materials, and in this embodiment, AQ5038 series dry film resist of Asahi Corp. is used.

Subsequently, as illustrated in FIG. 2D, the first resist layer 202 and the second resist layer 203 are exposed and developed. In this case, it is preferable in the manufacturing process that the first resist layer 202 and the second resist layer 203 simultaneously perform double-sided exposure and development from both sides of the substrate 101. Alternatively, after the first exposure and development processes for the first resist layer 202 are performed, the second exposure and development processes for the second resist layer 203 may be performed. S60)

Next, as shown in FIG. 2E, the blind via hole 108 is formed by etching the region of the polymer film 102 exposed to the portion where the second resist layer 203 is formed. The blind via hole 108 is formed to completely pass through the polymer film 102 along the thickness direction.

At this time, the adhesive 104 is also removed on the first surface 102a of the polymer film 102 to which the copper thin film layer 103 is attached, so that the blind via hole 108 is formed on the first surface of the copper thin film layer 103. It comes into contact with the face 103a. On the other hand, the blind via hole 108 is not blocked at the second surface 102b of the polymer film 102 and is open to the outside.

The solution for etching the polymer film 102 is a non-hydrazine-based strong alkali solution having a pH of 10 or more, a water-soluble aliphatic amino alcohol having 4 or less carbon atoms having an amino group or an imino group and a hydroxyl group, and an aqueous tetraalkyl ammonium hydroxide solution. Consists of

Aliphatic amino alcohols include monoethanol amines. Aliphatic amino alcohols have the property of promoting the penetration of organic alkali into the polyimide film and eluting the hydrolysis product of the polyimide. In particular, monoethanol amine has high water solubility, excellent permeability into a polymer film such as a polyimide film, and high water solubility of the hydrolysis product of the polyimide film.

Tetraalkyl ammonium hydroxide aqueous solution includes tetramethyl ammonium hydroxide aqueous solution or tetraethyl ammonium hydroxide aqueous solution. Tetraalkyl ammonium hydroxide aqueous solution is an organic alkali aqueous solution, and has the characteristic of hydrolyzing a polyimide film.

Therefore, the etching solution of the polymer film 102 is preferably a mixture of a water-soluble aliphatic amino alcohol and an aqueous tetraalkyl ammonium hydroxide solution. (S70)

After forming the blind via hole 108, an organic solder preservative 109 is formed on the surface of the first surface 103a of the exposed copper thin film layer 103 as shown in FIG. 2F. The organic solder preservative 109 is a kind of flux layer, which may prevent oxidation of the first surface 103a of the copper thin film layer 103, and facilitates bonding at a later soldering time. Instead of the organic solder preservative, the flux layer may be formed of a nickel alloy plating layer or a metal plating layer such as a gold alloy plating layer.

Next, as shown in FIG. 2G, the ball pad mask 204 is taped under the substrate 101. That is, the second resist layer 203 is formed on the surface of the second surface 102b of the polymer film 102.

At this time, the ball pad mask tape 204 is attached to the surface of the second resist layer 203 so as to cover the second resist layer 203 and the blind via hole 108 together. Accordingly, the blind via hole 108 is blocked from the outside by the ball pad mask tape 204. (S90)

Subsequently, as shown in FIG. 2H, the copper thin film layer 103 is patterned. That is, the copper thin film layer 103 is etched by etching the copper thin film layer 103 between the first resist layers 203 using the metal etching solution on the first surface 102a side of the polymer film 102. It is formed of a circuit pattern layer according to the design. (S100)

Next, as shown in FIG. 2I, the first resist layer 202 is first stripped. That is, after the pattern of the copper thin film layer 103 is completed, the first resist layer 202 attached to the surface of the copper thin film layer 103 is removed. Thus, the copper thin film layer 103 of the desired pattern is completed on the first surface 102a of the polymer film 102. (S110)

After the copper thin film layer 103 is patterned, the tin emulsion layer 205 is formed on the outer surface of the copper thin film layer 103 as shown in FIG. 2J. Due to the formation of the tin emulsion layer 205, the semiconductor chip (105 of FIG. 1) may be smoothly bonded to the chip pattern layer 106 (S120) after the tin emulsion layer 205 is formed. It is hardened at a predetermined temperature. (S130)

Next, as shown in FIG. 2K, a detaping process of separating the ball pad mask tape 204 attached to the surface of the second resist layer 203 is performed. As such, the ball pad mask tape 204 is attached to the surface of the second resist layer 203 during the previous process, so that the inner surface of the polymer film 102 around the blind via hole 108 and the organic solder are formed. Contamination at the portion where the preservative 109 is formed can be prevented in advance. (S140)

After the detapping process of the ball pad mask tape 204 is completed, as shown in FIG. 2L, the second resist layer 203 is stripped secondly (S150).

A patterned copper thin film layer 103 is formed on one surface of the substrate 101 through the above process, and a blind via hole 108 is formed in contact with the copper thin film layer 103 in the thickness direction of the substrate 101. do. In addition, a tin emulsion layer 205 is formed on an outer surface of the copper thin film layer 103, and an organic solder preservative 109 is formed on an inner surface of the copper thin film layer 103 contacting the blind via hole 108.

Next, as shown in FIG. 1, in the chip interconnection region 107, the chip pattern layer 106 of the semiconductor chip 105 and the patterned copper thin film layer 106 are electrically connected to each other. In the connection region 112, the solder balls 110 and the copper thin film layer 106 filled in the blind via holes 108 are electrically connected, and the outer surface of the solder balls 110 is electrically connected to the external circuit board 111. Will be connected.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1 is a cross-sectional view showing a semiconductor package according to an embodiment of the present invention;

2A through 2L are cross-sectional views illustrating a state in which the semiconductor package of FIG. 1 is manufactured.

2A is a cross-sectional view illustrating a state after preparing the substrate of FIG. 1;

2B is a cross-sectional view illustrating a state after forming an exposure hole in the substrate of FIG. 2A;

FIG. 2C is a cross-sectional view illustrating a state after forming a resist layer on both surfaces of the copper thin film layer of FIG. 2B;

FIG. 2D is a cross-sectional view showing a state after exposing and developing the resist layer of FIG. 2C;

FIG. 2E is a cross-sectional view illustrating a state after forming the blind via hole by etching the polymer film of FIG. 2D; FIG.

FIG. 2F is a cross-sectional view illustrating a state after forming an organic solder preservative on an inner surface of the copper thin film layer of FIG. 2E;

FIG. 2G is a cross-sectional view showing a state after taping a ball pad mask on the substrate of FIG. 2F;

2H is a cross-sectional view showing a state after patterning the copper thin film layer of FIG. 2G;

FIG. 2I is a cross-sectional view illustrating a state after stripping the first resist layer of FIG. 2H;

FIG. 2J is a cross-sectional view illustrating a state after forming a nickel emulsion layer on an outer surface of the copper thin film layer of FIG. 2I;

2K is a cross-sectional view illustrating a state after detapping the ball pad mask of FIG. 2J;

FIG. 2L is a cross-sectional view showing a state after stripping the second resist layer of FIG. 2K;

3 is a cross-sectional view illustrating a state in which the semiconductor package of FIG. 1 is manufactured.

<Brief description of the major symbols in the drawings>

100 ... semiconductor package 101 ... substrate

102 Polymer Film 103 Copper Thin Film Layer

104 ... adhesive 105 ... semiconductor chip

106 ... chip pattern layer 107 ... chip interconnection area

108 Blind Via Hole 109 Organic Solder Preservative

110 Solder ball 111 External circuit board

112 substrate interconnection area 205 solder emulsion layer

Claims (10)

Preparing a polymer film and a substrate on which a metal thin film layer is stacked on the polymer film; Patterning the resist layer on the substrate to form blind via holes; Taping with a ball pad mask to cover the blind via hole and then patterning the metal thin film layer; And And separating the resist layer and a ball pad mask from the substrate. The method of claim 1, In the step of preparing the substrate, The polymer film is a polyimide film, the metal thin film layer is a method for manufacturing a semiconductor package, characterized in that the copper thin film layer. The method of claim 1, In the forming of the blind via hole, Stacking a first resist layer on a first side of the substrate and stacking a second resist layer on a second side opposite to the first side; Exposing and developing the first resist layer and the second resist layer; And Etching the region of the polymer film exposed to the portion where the second resist layer is formed to form the blind via hole. The method of claim 3, wherein In the step of etching the polymer film, The etching solution is a strong alkali solution of pH 10 or more of non-hydrazine type, A method for producing a semiconductor package comprising a water-soluble aliphatic aminoalcohol having 4 or less carbon atoms having an amino group or an imino group and a hydroxyl group in a molecule, and an aqueous tetraalkyl ammonium hydroxide solution. The method of claim 3, wherein Separating the resist layer and the ball pad mask, Firstly stripping the first resist layer, And second stripping the second resist layer after detapping the ball pad mask. The method of claim 1, And forming a flux layer on an inner surface of the exposed metal thin film layer after forming the blind via hole. The method of claim 1, After the metal thin film layer is patterned, a method of manufacturing a semiconductor package, further comprising forming a tin emulsion layer on an outer surface of the metal thin film layer. A substrate on which a polymer film and a patterned metal thin film layer are stacked on the polymer film, and a plurality of blind via holes are formed; A semiconductor chip electrically connected to the metal thin film layer; And a circuit board electrically connected by solder balls connected to the metal thin film layer through the blind via hole. The blind via hole is a strong alkali-based solution having a pH of 10 or more of a non-hydrazine type, and the polymer is formed by an etching solution comprising a water-soluble aliphatic amino alcohol having 4 or less carbon atoms having an amino group or an imino group and a hydroxyl group in a molecule, and an aqueous tetraalkyl ammonium hydroxide solution. A semiconductor package, characterized in that the film is formed by etching. The method of claim 8, On the first surface of the polymer film, the inner surface of the patterned metal thin film layer is in contact with the blind via hole, the solder ball filled in the blind via hole and the metal thin film layer are electrically connected. The blind via hole is opened on the second surface of the polymer film, the solder ball formed through the blind via hole is exposed to the outside, the semiconductor package, characterized in that electrically connected with the circuit board. The method of claim 8, The polymer film comprises a polyimide film.

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