KR101022654B1 - Electron emitting device and manufacturing method thereof - Google Patents

Abstract

The present invention, a substrate; An electron emission unit formed on an upper surface of the substrate; And an insulating layer provided over an upper surface of the substrate, wherein the insulating layer includes a hole corresponding to the electron emitting part, a protective layer is provided inside the hole, and the protective layer is a polymer compound. , The polymer compound provides an electron emitting device, characterized in that at least one of fluorinated, chloroated, brominated compound.

In addition, the present invention, the substrate; An electron emission unit formed on an upper surface of the substrate; A method of manufacturing an electron emission device having an insulating layer on an upper surface of the substrate, the method comprising: forming a hole corresponding to the electron emission part in the insulating layer, and at the same time forming the hole, a protective layer inside the hole It provides a method for producing an electron emitting device, characterized in that formed.

Description

Electron emission device and method for manufacturing same {Electron emission device and method for producing the same}

1A is a schematic cross-sectional view of a field emission device according to the prior art,

1B and 1C are schematic views illustrating a process of manufacturing the field emission device of FIG. 1A;

2A to 2E are schematic diagrams illustrating a field emission device and a process of manufacturing the same according to an embodiment of the present invention;

3 is a partial cross-sectional view of a field emission device according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

10 ... First substrate 10a ... First electrode layer

20 Insulation layer 30 Gate electrode layer

40.Electron emission part 50 ... hole

60 photoresist 70 protective layer

80 ... spacer 100 ... second substrate

110 second electrode layer 120 fluorescent layer

The present invention relates to an electron emitting device and a method of manufacturing the same, and more particularly, to an electron emitting device having a structure that improves the electron emission effect emitted from the electron emitting portion and a method of manufacturing the same.

In general, an electron emission display device is a flat panel display that realizes a predetermined image by colliding electrons emitted from a first substrate side with a fluorescent layer formed on a second substrate to emit light. There is a method using and a cold cathode.

The cold-cathode electron emission display device includes a field emission display (FED), and the field emission display device is a field emitter (FE) type electron emission display device and a metal-insulator (MIM). Metal-type electron emission displays, metal-insulator-semiconductor (MIS) -type electron emission displays, and surface conduction electron-emitting displays (SEDs) are known.

The field emission display device emits electrons from an electron emission part of a lower substrate by forming a electric field by applying a voltage between an anode electrode and a cathode electrode in a vacuum vessel including a lower substrate and an upper substrate, and emits the electrons from the electron emission portion of the lower substrate. A display device which emits light by colliding with a fluorescent material on the anode electrode side of the.

The field emission display device may be classified into a bipolar field emission display device having only a cathode and an anode and a tripolar field emission display device having a cathode, an anode, and a gate electrode according to the number of electrodes provided. Further, according to the arrangement of the electrodes, a top gate type in which the gate electrode is disposed between the cathode electrode and the anode electrode, an under gate type in which the gate electrode is disposed below the cathode electrode, and the gate electrode are formed on the same plane as the cathode electrode It can be divided into horizontal gate type.

In addition, as another type of field emission display device, it is possible to prevent damage to the gate electrode and / or the anode electrode by the arc, which is supposed to be caused by the discharge phenomenon, and to ensure the concentration of electrons emitted from the electron emission portion. There is also a mesh type field emission display device having a grid / mesh.

As the electron emission portion of the field emission display device, a micro tip made of a metal such as molybdenum (Mo) is conventionally used, and the micro tip is typically formed using a spindt method or the like.

However, when adopting the micro tip formed by the spin method or the like as the electron emission portion, there arises a problem that the manufacturing cost increases considerably as the display area becomes large. In addition, as the field emission progresses, the tip life can be shortened due to the influence of the atmosphere gas and the electric field, and there is a limit in reducing the driving voltage with the micro tip of the metal material having a large work function.

Therefore, in recent years, as an approach to overcome these problems, an electron emission unit using a carbon-based material having a very high aspect ratio, excellent durability, and excellent electronic conductivity has been manufactured.                         

As a method of generating such a carbon type electron emission part, there exist a chemical vapor deposition method, the printing method, etc. In particular, the printing method has the advantage of preventing the damage to the substrate by excluding the high temperature process in that the paste containing the carbon-based material is printed and fired on the substrate to form the carbon-based electron emission portion.

Meanwhile, an example of the field emission device of the top gate type field emission display device is illustrated in FIG. 1A, and FIGS. 1B and 1C illustrate a process of manufacturing such a field emission device. As shown in FIG. 1B, the cathode electrode 1a is formed on one surface of the substrate 1. Then, after masking the position where the electron emission portion is to be formed using the photoresist 6 or the like, the hole 5 is formed through chemical reaction etching or the like, the photoresist 6 is removed, and the insulating layer ( The gate electrode 3 is formed on one surface of 2), and the electron emission part 4 is formed to be in electrical communication with the cathode electrode 1a.

During this process, according to the prior art, the inner surface of the hole does not form a vertical structure with respect to one surface of the substrate 1 to the cathode electrode 1a when the hole is formed through chemical reaction etching, etc., but the etching is performed on the inner wall. Indentation 5a and the like were formed. That is, isotropic etching was performed to the insulating layer 2. One such example is disclosed in Japanese Patent Laid-Open No. 9-134686.

The structure of the electron emission element formed in this way, in particular the structure of the hole in which the electron emission portion is disposed, lowers not only the electron emission path from the electron emission portion toward the anode electrode and / or the fluorescent layer opposite to the cathode electrode, It is difficult to form a gate electrode with an appropriate gap (distance between edges).                         

In addition, according to another conventional technology, when performing only physical etching, that is, ion etching, the inner surface of the hole to be formed is not perpendicular to the substrate or the cathode electrode, and the area of the lower surface may be formed smaller than the area of the hole inlet. This structure is as shown in Japanese Patent Laid-Open No. 2001-229847. However, when holes are formed only by ion etching, a problem may be raised that limits the positions where the electron emission portions are formed later.

The present invention is to solve the above problems, in forming a hole in the insulating layer to be located in the insulating layer, the inner wall of the hole to maintain a vertical structure with respect to the substrate, thereby limiting the arrangement position of the electron emitting portion Another aspect of the present invention is to provide an electron emission device and a method of manufacturing the same, which do not interfere with the path of electrons emitted from the electron emission portion.

In order to achieve the above object, a substrate; An electron emission unit formed on an upper surface of the substrate; And an insulating layer provided over an upper surface of the substrate, wherein the insulating layer includes a hole corresponding to the electron emitting part, a protective layer is provided inside the hole, and the protective layer is a polymer compound. , The polymer compound provides an electron emitting device, characterized in that at least one of fluorinated, chloroated, brominated compound.

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According to another aspect of the invention, the substrate; An electron emission unit formed on an upper surface of the substrate; A method of manufacturing an electron emission device having an insulating layer on an upper surface of the substrate, the method comprising: forming a hole corresponding to the electron emission part in the insulating layer, and at the same time forming the hole, a protective layer inside the hole It provides a method for producing an electron emitting device, characterized in that formed.

According to another aspect of the present invention, the hole forming step is performed by the reaction dry etching, the reaction dry etching using a cation and a reactive gas, the reactive gas is characterized in that it comprises a fluorinated gas Provided is a method of manufacturing an emitting device.

According to another aspect of the present invention, the fluorinated gas provides an electron emission device manufacturing method characterized in that it comprises at least one of CF4, C2F6, CHF3, C2F4, C3F6.

According to another aspect of the present invention, the hole forming step is performed by the reaction dry etching, the reaction dry etching using a cation and a reactive gas, the reactive gas is characterized in that it comprises a chloroated gas Provided is a method of manufacturing an emitting device.

According to yet another aspect of the present invention, the chlorolated gas provides at least one of CHCl 3 and CCl 4 provides an electron emission device manufacturing method.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.                     

2A to 2E schematically illustrate a process of forming a field emission device according to an embodiment of the present invention.

First, as shown in FIG. 2A, a first electrode layer 10a as a cathode electrode is formed on one surface of the substrate 10. For example, the first electrode layer 10a may be formed by depositing a metal such as Al or Cr on the entire surface of the substrate 10 and patterning the same by wet etching, but the present invention is limited thereto. It doesn't happen.

Thereafter, as shown in FIG. 2B, the insulating layer 20 is formed on one surface of the substrate 10 and the first electrode layer 10a. The insulating layer 20 may be formed of a material such as SiO 2, PbO, BaO 3, or the like, but the insulating layer 20 according to the present invention is not limited thereto.

A photoresist may be used on the insulating layer 20 as a mask for selectively forming the holes 50 in the insulating layer 20, as shown in FIGS. 2C and 2D. That is, by forming the photoresist layer 60 on one surface of the insulating layer 20, and selectively exposing and developing the photoresist layer 60, the hole 50 (see FIG. 2E) may be patterned.

Thereafter, ion irradiation reaction dry etching is performed on the region exposed by the photoresist layer 60 as a mask, that is, the region for forming the holes 50.

At this time, the atmosphere used during the plasma discharge is composed of a cation and a reaction gas, Ar + etc. are used as the cation, a fluorine gas containing at least one of CF 4, C2F6, CHF3, C2F4, C3F6, Various gases may be used, such as a chloro gas comprising one or more of Cl 2, CHCl 3, BCl 3 and CCl 4, and a bromine gas such as CH 3 Br.                     

When ion irradiation dry etching is performed under such a reaction gas atmosphere, holes 50 are formed in the insulating layer 20 by ion bombardment of cations. The etching by the ion collision of the cation is anisotropic etching, the etching proceeds in the depth direction of the insulating layer 20. At the same time, the reaction gas having an appropriate composition forms a protective layer 70 on the inner wall and the lower surface of the hole 50 of the insulating layer 20 by chemical action with a material constituting the insulating layer, rather than performing isotropic etching. 2E, only the protective layer 70 formed on the side of the hole 50 remains, and the protective layer formed on the lower surface of the hole 50 is etched by ion collision of cations.

The protective layer 70 may be formed differently according to the type of reaction gas used. That is, when using a fluorination reaction gas, the high molecular compound of the chain bond by a plurality of CFx (x> 1) is formed in the protective layer 70. In addition, when using a chlorolated gas as a reaction gas, the high molecular compound of the chain bond by many CClx (x> 1) is formed as the protective layer 70.

On the other hand, the hole 50 formation process progresses until the lower surface of the hole 50 reaches the 1st electrode layer 10a as a conductive layer formed on the board | substrate 10. FIG. After the hole 50 forming process is completed, the photoresist layer 60 formed on one surface of the insulating layer 20 is removed. In the process of removing the photoresist layer 60, care should be taken so that the photoresist does not remain in the hole 50 formed by the insulating layer 20 and the first electrode layer 10a.

After the photoresist layer 60 is removed, as shown in FIG. 3, the gate electrode 30 is formed on one surface of the insulating layer 20 except for the inlet of the hole 50.                     

After the gate electrode 30 is formed, the electron emission part 40 is formed to be in electrical communication with the first electrode layer 10a as the cathode electrode. The electron emission part 40 according to the present invention may be formed in various forms. That is, the electron emission part 40 may be made of a micro tip type (see FIG. 1A), and as shown in FIG. Various configurations are possible, such as may be made of a paste surface type.

Thereafter, the substrate on which the plurality of electron emission portions 40 are formed is, for example, a second substrate on which a fluorescent layer 80 forming a color such as R, G, B, and the like, and a second electrode layer 90 as an anode electrode are formed. Together with the 100, the spacers 85 are attached at regular intervals. Meanwhile, the spacer 85 may be disposed between each pixel, or may be disposed with several pixels therebetween. Preferably, the spacer 85 is disposed at regular intervals for proper support of the first substrate and the second substrate. .

As described above, according to the present invention, by forming a protective layer on the inner wall of the hole through the reaction gas having a suitable composition, the inner wall to form a hole substantially perpendicular to the substrate, thereby the electrons at the time of electron emission It is possible to provide a field emission device having a structure in which electron emission can be performed smoothly without being interrupted in the course of emission.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and various modifications and equivalent other embodiments are possible to those skilled in the art. I can understand. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (8)

Board; An electron emission unit formed on an upper surface of the substrate; And In the electron emission device having an insulating layer on one surface of the substrate, The insulating layer is provided with a hole corresponding to the electron emission portion, a protective layer is provided inside the hole, The protective layer is a high molecular compound, The polymer compound is an electron emission device, characterized in that at least one of fluorinated, chloroated, brominated compound. delete delete Board; An electron emission unit formed on an upper surface of the substrate; In the method of manufacturing an electron emission device having an insulating layer on one surface of the substrate, Forming a hole corresponding to the electron emission part in the insulating layer, And a protective layer is formed inside the hole at the same time as the hole formation. The method of claim 4, wherein The hole forming step is performed by a reactive dry etching, wherein the reactive dry etching uses a cation and a reactive gas, the reactive gas comprises a fluorinated gas. The method of claim 5, The fluorinated gas comprises at least one of CF4, C2F6, CHF3, C2F4, C3F6. The method of claim 4, wherein The hole forming step may be performed by a reactive dry etching, wherein the reactive dry etching uses a cation and a reactive gas, and the reactive gas includes a chloroated gas. The method of claim 7, wherein The chlorolated gas is at least one of CHCl 3 and CCl 4 characterized in that the electron emitting device manufacturing method.

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