KR100752383B1 - Organic light emitting display and fabricating method of the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a method of manufacturing the same, wherein a substrate, a lower electrode disposed on the substrate, and a hole injection layer, a hole transport layer, and a light emitting layer are sequentially stacked on the lower electrode. An organic layer and an upper electrode positioned on the organic layer, wherein a doping layer is positioned between the lower electrode and the light emitting layer, and the doping layer is doped with a P-type dopant It relates to a manufacturing method.

Doping layer, P type dopant, hole injection layer, light emitting layer

Description

Organic light emitting display device and its manufacturing method {Organic light emitting display and fabricating method of the same}

1 is a cross-sectional view of an organic light emitting display device according to Example 1 of the present invention.

2 is a cross-sectional view of an organic light emitting display device according to Embodiment 2 of the present invention.

3 is a graph showing a relationship between voltage and current according to Experimental Example 1 of the present invention.

4 is a graph showing a relationship between voltage and luminance according to Experimental Example 2 of the present invention.

<Explanation of symbols for main parts of the drawings>

10. Substrate 110. OLED

110. Lower electrode 120. Organic film

121. Hole injection layer 122. Doping layer

123. Hole transport layer 124. Light emitting layer

125. Electron transport layer 126. Electron injection layer

130. Upper electrode

The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, to improve charge (hole) transport characteristics, a doping layer doped with a P-type dopant is disposed between the hole injection layer and the hole hole layer. The present invention relates to an organic light emitting display device and a method of manufacturing the same, which can improve driving voltage, efficiency, and lifespan without forming a thin layer or forming the doping layer in the hole injection layer.

The organic light emitting device is a self-luminous display, which has a thin, lightweight, simple parts, an ideal structure, a simple structure, a wide viewing angle in high definition, perfect video, high color purity, low power consumption, and low voltage driving. It has the advantage of having electrical characteristics suitable for displays.

In general, the structure of an organic light emitting display device includes a substrate having a predetermined element and a pixel electrode disposed on the substrate, and an organic layer including at least an emission layer (EML) disposed on the pixel electrode. The counter electrode is located at. The organic layer may include a hole injection layer (HIL) and a hole transportation layer (HTL) between the pixel electrode and the light emitting layer, and an electron transport layer between the emission layer (EML) and the counter electrode. A transfer layer (ETL) and an electron injection layer may be further included.

The driving principle of the organic light emitting display device having the above structure is as follows. When a voltage is applied between the pixel electrode and the counter electrode, holes are injected from the pixel electrode into the light emitting layer via the hole injection layer and the hole transport layer, and electrons are also injected into the light emitting layer from the counter electrode via the electron injection layer and the electron transport layer. . Holes and electrons injected into the emission layer recombine in the emission layer to generate excitons, and the excitons emit light while transitioning from the excited state to the ground state.

The luminescence properties are also determined according to the electroluminescence properties of the organic materials constituting the luminescent layer. US Patent No. 4,769,292 describes an organic electroluminescent device composed of a host material and a luminescent dopant and having a luminescent region having a thickness of less than 1 μm. Doing. In this case, the light emitting dopant is a material generating excitons by transferring energy from the host material. The excitons emit light while the excitons transition from the excited state to the ground state, thereby controlling the emission color of the organic light emitting diode and increasing the light emission efficiency. Play a role.

As such, when the light emitting layer is formed of a host material and a light emitting dopant, the concentration of the dopant affects the driving voltage and the light emitting efficiency of the organic light emitting diode. When the concentration of the dopant is increased, the driving voltage may be lowered. However, in this case, concentration quenching may occur and thus the luminous efficiency may be reduced. Therefore, it is necessary to control the concentration of the dopant which can lower the driving voltage and increase the luminous efficiency.

On the other hand, the excitons are generated in the light emitting layer to maintain the excited state for a certain period of time to transition to the ground state, the time required is called the life of the excitons. During this time, the excitons may diffuse into the light emitting layer / pixel electrode interface or the light emitting layer / counter electrode interface. In order to increase the light emitting efficiency of the organic light emitting device, it is necessary to confine the excitons into the light emitting layer. . This is even more so in the case of phosphorescent dopants having a long life and diffusion distance of the exciton.

In particular, in the front light emitting device, the thickness of the organic layer is formed to increase the thickness of the organic layer in order to maximize the microcavity effect and minimize the appearance of defects caused by the microparticles. It is becoming. In addition, when a hole injection layer doped with a P-type dopant is deposited in contact with an indium tin oxide (ITO) film of a pixel electrode, there is a problem of leakage current due to high planar conductivity.

The present invention is to solve the above problems of the prior art to form a doping layer doped with a P-type dopant (dopant) in the hole injection layer to improve the charge (hole) transport characteristics or between the hole injection layer and the hole transport layer By forming thin, the driving voltage, efficiency and life can be improved without doping the entire hole injection layer, and when the doped hole injection layer is deposited in contact with the indium tin oxide (ITO) film of the lower electrode, An object of the present invention is to solve the problem of leakage current caused by conductivity.

In order to achieve the above object, the organic light emitting device according to the present invention,

Board;

A lower electrode on the substrate;

An organic layer disposed on the lower electrode and having at least a hole injection layer, a hole transport layer, and a light emitting layer sequentially stacked; And

And an upper electrode on the organic layer.

An organic light emitting device, wherein the doped layer is positioned between the lower electrode and the light emitting layer, and the doped layer is doped with a P-type dopant;

The doping layer is formed between the hole injection layer and the hole transport layer,

The doping layer is formed of the same material as the hole injection layer,

The p-type dopant is characterized in that F ₄ -TCNQ or FeCl ₃ ,

The doped layer is provided with an organic light emitting device, characterized in that the thickness of 10 ~ 200Å.

In addition, the manufacturing method of the organic light emitting device according to the present invention in order to achieve the above object,

Providing a substrate;

Forming a lower electrode on the substrate;

Sequentially forming at least a hole injection layer, a doping layer doped with a P-type dopant, a hole transport layer, and a light emitting layer on the lower electrode to form an organic film; And

Forming an upper electrode on the organic film; and a method of manufacturing an organic light emitting display device comprising:

The doping layer is formed of the same material as the hole injection layer,

The p-type dopant is characterized in that F ₄ -TCNQ or FeCl ₃ ,

The forming of the organic layer may further include forming a hole injection layer after forming the doping layer.

The thickness of the doped layer provides a method for producing an organic light emitting device, characterized in that formed in 10 ~ 200Å.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Various modifications and variations will be possible to those skilled in the art without departing from the spirit of the present invention. In the drawings, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween.

(Example 1)

1 is a cross-sectional view of an organic light emitting display device according to Example 1 of the present invention.

Referring to FIG. 1, the organic light emitting display device 100 according to the present invention includes a lower electrode 110, a hole injection layer 121, a hole transport layer 123, and a light emitting layer on a substrate 10 having a predetermined device. 124, the electron transport layer 125 and the electron injection layer 126 are formed of an organic layer 120 and an upper electrode 130. The hole injection layer 121 is formed of a P-type dopant. The doped layer 122 has a lamination structure in which the doped layer 122 is inserted. In this case, the organic light emitting diode 100 may have a top emission, a bottom emission, or a double emission structure.

First, the lower electrode 110 is positioned on the substrate 10. When the lower electrode 110 is an anode, at least one thin film transistor may be further provided between the substrate 10 and the lower electrode 110.

The substrate 10 is made of a material such as glass, synthetic resin, or stainless steel, which has excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness.

The lower electrode 110 may be a transparent electrode or a reflective electrode. When the lower electrode 110 is a transparent electrode, the lower electrode 110 may be an indium tin oxide (ITO) film, an indium zinc oxide (IZO) film, a tin oxide (TO) film, or a zinc oxide (ZnO) film. . When the lower electrode 110 is a reflective electrode, the lower electrode 110 may be a silver (Ag) film, an aluminum (Al) film, a nickel (Ni) film, a platinum (Pt) film, a palladium (Pd) film, or the like. It may have a structure in which a transmissive oxide film of ITO, IZO, TO, or ZnO is laminated on the alloy film or the alloy film thereof. The silver (Ag) film, aluminum (Al) film, or an alloy film thereof may emit light from the organic film 120 including at least the light emitting layer 124 formed in a subsequent process in a direction opposite to the substrate 10. To reflect.

The lower electrode 110 may be formed by a vapor phase deposition method such as a sputtering method or an evaporation method, an ion beam deposition method, or an electron beam deposition method. Alternatively, the laser ablation may be performed using a laser ablation method.

Next, an organic layer 120 is formed on the lower electrode 110. The organic layer 120 includes at least a light emitting layer 124. In Example 1 according to the present invention, the organic layer 120 is sequentially laminated with a hole injection layer 121, a hole transport layer 123, a light emitting layer 124, an electron transport layer 125 and an electron injection layer 126 And a doping layer 122 doped with a P-type dopant is formed between the hole injection layer 121, but is not necessarily limited to the electron transport layer 125 and the electron injection layer 126 Either layer may be omitted and may be formed of a plurality of layers. That is, the various layers that may form the organic layer 120 may be formed by omitting a part of the organic layer 120 or forming a plurality of layers as necessary in various layers.

Subsequently, a hole injection layer 121 is formed on the lower electrode 110. The hole injection layer 121 is a layer that facilitates the injection of holes into the light emitting layer 124, a low molecular material such as cupper phthalocyanine (CuPc), TNATA, TCTA, TDAPB, TDATA or PANI (polyaniline), PEDOT ( It may be formed using a polymer material such as poly (3,4) -ethylenedioxythiophene. In Experimental Example 1 of the present invention, (4,4 ', 4 "-Tris (N-3- methylphenyl-N-phenyl-amino ) -triphenylamine (hereinafter referred to as m-MTDATA) and formed at a deposition rate of 1 to 2 kW / sec in a vacuum of 1.0 × 10 ⁻⁶ torr or more, wherein m-MTDATA has a molecular weight of 789.04 and a glass transition temperature (Tg). 75 ° C, the highest occupied molecular orbital (HOMO) energy level is 5.1 eV, and the lowest unoccupied molecular orbital (LUMO) energy level is 3.1 eV, and the molecular structure is as follows.

The doping layer 122 doped with a P-type dopant is disposed in the hole injection layer 121. The doping layer 122 is doped in a P-type between the hole injection layer 121 is deposited thinly and the thickness of the doping layer 122 is formed to a thickness of 10 ~ 200Å. That is, the doping layer 122 is formed to a thickness of 0.45% to 10% based on the total thickness of the hole injection layer 121, when the thickness of the doping layer 122 is formed to 10% or more of the leakage current Problems arise and charge transport characteristics are reduced when formed below 0.45%. Therefore, the doped layer 122 doped with P-type is formed to 0.45% to 10% based on the thickness of the hole injection layer 121. The doping layer 122 is formed of the same material as that of the general hole injection layer 121, and a dopant may be formed of a material such as F ₄ -TCNQ and FeCl ₃ .

In the experimental example of the present invention, F ₄ -TCNQ was used as the dopant. The F ₄ -TCNQ has a HOMO energy level of -8.53 eV, an LUMO energy level of -6.23 eV, and a molecular structure thereof.

Conventionally, in order to maximize the microcavity effect and minimize defects caused by the microparticles in the organic light emitting device 100, the thickness of the entire organic layer 120 is thickened, thereby increasing the driving voltage. However, according to the present invention, when the doping layer 122 doped with a P-type dopant is formed between the hole injection layers 121 and the red phosphorescent layer is formed, the driving voltage is 6.5V. Reduced to 5.5V, improving efficiency and lifetime. In addition, when the partially doped hole injection layer 121 is formed as in the present invention, the whole is deposited in contact with the ITO film of the lower electrode 110 as compared with the hole injection layer 121 doped with a P-type dopant. The leakage current caused by the high planar conductivity generated in the case can be solved.

Next, a hole transport layer 123 is formed on the hole injection layer 121 including the doped layer 122. The hole transport layer 123 is a layer that facilitates the transport of holes to the light emitting layer 124, NPD (N, N'-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-Bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine), s-TAD, MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine It can be formed using a low molecular weight material such as) or a polymer material such as PVK.

The hole injection layer 121, the doping layer 122, and the hole transport layer 123 may be formed using any one method selected from the group consisting of a vacuum deposition method, a spin coating method, or an ink-jet method. Can be.

Subsequently, the emission layer 124 is formed on the hole transport layer 123. The emission layer 124 may be a phosphorescent layer or a fluorescent layer. When the light emitting layer 124 is a fluorescent layer, the light emitting layer 124 is Alq3 (8-trishydroxyquinoline aluminum), distyrylarylene (DSA), distyrylarylene derivative, distyrylbenzene (DSB), Distyrylbenzene derivative, DPVBi (4,4'-bis (2,2'-diphenyl vinyl) -1,1'-biphenyl), DPVBi derivative, spiro-DPVBi and spiro-6P (spiro-sixphenyl) It may include one material selected from the group. Furthermore, the light emitting layer 124 may further include one dopant material selected from the group consisting of styrylamine, perylene, and DSBP (distyrylbiphenyl).

In contrast, when the light emitting layer 124 is a phosphorescent layer, the light emitting layer 124 may include one material selected from the group consisting of arylamine, carbazole and spiro. Preferably, the host material is selected from the group consisting of CBP (4,4-N, N dicarbazole-biphenyl), CBP derivatives, mCP (N, N-dicarbazolyl-3,5-benzene) mCP derivatives and spiro derivatives. It is a substance. In addition, the light emitting layer 124 may include a phosphorescent organic metal complex having one central metal selected from the group consisting of Ir, Pt, Tb, and Eu as a dopant material. Further, the phosphorescent organic metal complex may be one selected from the group consisting of PQIr, PQIr (acac), PQ ₂ Ir (acac), PIQIr (acac) and PtOEP.

In the case of a full color organic electroluminescent device, the light emitting layer 124 may be formed using a vacuum deposition method, an inkjet printing method, or a laser thermal transfer method using a high definition mask.

A hole blocking layer (HBL) (not shown) may be formed on the emission layer 124. However, the hole blocking layer may be omitted when the light emitting layer 124 is a fluorescent light emitting layer. The hole blocking layer serves to suppress diffusion of excitons generated in the light emitting layer 124 in the process of driving the organic light emitting device. The hole blocking layer may be formed using Balq, BCP, CF-X, TAZ or Spiro-TAZ.

Subsequently, an electron transport layer (ETL) 125 is formed on the emission layer 124. The electron transport layer 125 is a layer that facilitates the transport of electrons to the light emitting layer 124, for example, using a polymer material such as PBD, TAZ, spiro-PBD or a low molecular material such as Alq3, BAlq, SAlq Can be formed.

An electron injecting layer (HTL) 126 may be formed on the electron transport layer 125. The electron injection layer 126 is a layer that facilitates the injection of electrons into the light emitting layer 124, for example, Alq3 (tris (8-quinolinolato) aluminum), LiF (Lithium Fluoride), gallium mixture (Ga complex) Can be formed using PBD.

The electron transport layer 125 and the electron injection layer 126 may be formed using a vacuum deposition method, a spin coating method, an inkjet printing method, or a laser thermal transfer method.

Thus, the organic layer including the hole injection layer 121, the doping layer 122 formed between the hole injection layer, the hole transport layer 123, the light emitting layer 124, the electron transport layer 125 and the electron injection layer 126 ( 120).

Next, an upper electrode 130 is formed on the organic layer 120. The upper electrode 130 may be formed as a cathode electrode. The upper electrode 130 is a conductive metal having a low work function when formed as a transparent electrode in a top light emitting structure, and includes Mg, Ca, Al, Ag, and the like. It is formed of one kind of material selected from the group consisting of alloys to form a thin thickness enough to transmit light, and when formed into a back light emitting structure, it is formed of a reflective electrode thick enough to reflect light. In the case of the structure, it can be formed by a transmission electrode.

(Example 2)

As shown in FIG. 2, the organic light emitting diode according to the second exemplary embodiment of the present invention differs from each other only in the position of the doping layer, and the laminated structure and the formation material of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer Etc. are formed similarly to Example 1.

2 is a cross-sectional view of an organic light emitting display device according to Embodiment 2 of the present invention.

Referring to FIG. 2, the lower electrode 110 is positioned on the substrate 10. When the lower electrode 110 is an anode, at least one thin film transistor may be further provided between the substrate 10 and the lower electrode 110.

Subsequently, a hole injection layer 121 is formed on the lower electrode 110. The hole injection layer 121 is a layer that facilitates the injection of holes into the light emitting layer 124, a low molecular material such as cupper phthalocyanine (CuPc), TNATA, TCTA, TDAPB, TDATA or PANI (polyaniline), PEDOT ( It may be formed using a polymer material such as poly (3,4) -ethylenedioxythiophene. In Experimental Example 2 of the present invention, (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino ) -triphenylamine (hereinafter referred to as m-MTDATA) is formed at a deposition rate of 1 ~ 2Å / sec in a vacuum of 1.0 × 10 ^-6 torr or more.

Next, a doping layer 122 doped with a P-type dopant is formed on the hole injection layer 121. The doping layer 122 is positioned between the hole injection layer 121 and the hole transport layer 123 and is doped in a P-type and deposited thinly. The doping layer 122 has a thickness of 10 kPa to 200 kPa.

Subsequently, a hole transport layer 123 is formed on the hole injection layer 121. The hole transport layer 123 is a layer that facilitates the transport of holes to the light emitting layer 124, NPD (N, N'-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-Bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine), s-TAD, MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine It can be formed using a low molecular weight material such as) or a polymer material such as PVK.

The hole injection layer 121, the doping layer 122, and the hole transport layer 123 may be formed using any one method selected from the group consisting of a vacuum deposition method, a spin coating method, or an ink-jet method. Can be formed.

Subsequently, the emission layer 124 is formed on the hole transport layer 123. The emission layer 124 may be a phosphorescent layer or a fluorescent layer.

Subsequently, an electron transport layer (ETL) 125 is formed on the light emitting layer 124. The electron transport layer 125 is a layer that facilitates the transport of electrons to the light emitting layer 124, for example, using a polymer material such as PBD, TAZ, spiro-PBD or a low molecular material such as Alq3, BAlq, SAlq Can be formed. In addition, an electron injecting layer (HTL) 126 may be formed on the electron transport layer 125. The electron injection layer 126 is a layer that facilitates the injection of electrons into the light emitting layer 124, for example, Alq3 (tris (8-quinolinolato) aluminum), LiF (Lithium Fluoride), gallium mixture (Ga complex) Can be formed using PBD.

The electron transport layer 125 and the electron injection layer 126 may be formed using a vacuum deposition method, a spin coating method, an inkjet printing method, or a laser thermal transfer method.

As a result, the organic layer 120 including the hole injection layer 121, the doping layer 122, the hole transport layer 123, the light emitting layer 124, the electron transport layer 125, and the electron injection layer 126 is formed.

Next, an upper electrode 130 is formed on the organic layer 120 to complete the organic light emitting diode.

Hereinafter, preferred examples are provided to aid the understanding of the present invention. However, the following experimental examples are only for helping understanding of the present invention, and the present invention is not limited to the following experimental examples.

The following experimental examples and comparative examples are examples for examining the quality and optical properties of the organic light emitting diode having the P-type doped layer according to the present invention.

Experimental Example 1

The lower electrode was cut by Corning's 15Ω / cm ² (1200Å) ITO glass substrate into 50mm * 50mm * 0.7mm and ultrasonically cleaned in isopropyl alcohol and pure water for 5 minutes. Thereafter, ultraviolet rays were irradiated for 30 minutes, exposed to ozone (O ₃ ), washed, and a glass substrate was mounted on the vacuum deposition apparatus.

First, m-MTDATA was vacuum deposited on the glass substrate as a hole injection layer to form a thickness of 1500 Å. Subsequently, F ₄ -TCNQ was vacuum deposited to a thickness of 20 GPa as a material for forming a doped layer to form a P-type doped layer. After the doping layer was formed, m-MTDATA was vacuum deposited as a hole injection layer to form a thickness of 700 kPa. After the hole transport layer was formed, NPD was vacuum deposited on the hole transport layer to form a thickness of 200 μs. Next, a phosphorescent host CBP and a dopant PQ ₂ Ir (acac) were formed to a thickness of 400 μs. Subsequently, Alq3 was deposited to a thickness of 300 mW using the electron transport layer, and then an organic light emitting diode was manufactured by vacuum depositing a cathode electrode at 150 mW using Mg-Ag as an upper electrode on the electron transport layer.

Experimental Example 2

An organic light emitting display device was manufactured under the same condition as Experimental Example 1, except that F ₄ -TCNQ was vacuum deposited to a thickness of 50 kV to form a P-type doped layer as a material for forming a doping layer.

Comparative Example 1

Compared with Experimental Example 1 or 2, an organic light emitting diode was manufactured without forming a doping layer.

 Voltage, current, voltage, and luminance relationship of Experimental Example 1, Experimental Example 2, and Comparative Example 1 are shown in the graphs of FIGS. 3 and 4.

3 and 4, it was confirmed that the driving voltage, the efficiency, and the luminance were increased by forming the P-type doped layers as in Experimental Examples 1 and 2.

According to the present invention as described above, by forming a thin doped layer doped with a P-type dopant (dopant) between the hole injection layer or between the hole injection layer and the hole transport layer, without the doping the entire hole injection layer and It can improve the efficiency and lifespan, and also solve the problem of leakage current caused by high planar conductivity when the doped hole injection layer is deposited in contact with the indium tin oxide (ITO) film of the lower electrode. Can be.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below You will understand.

Claims (17)

Board; A lower electrode on the substrate; An organic layer disposed on the lower electrode, in which a hole injection layer, a hole transport layer, and a light emitting layer are sequentially stacked; And And an upper electrode on the organic layer. And a doped layer between the lower electrode and the light emitting layer, wherein the doped layer is doped with a P-type dopant. The method of claim 1, The doped layer is an organic light emitting device, characterized in that formed between the hole injection layer and the hole transport layer. The method of claim 1, The hole injection layer is an organic light emitting diode, characterized in that formed of one material selected from the group consisting of CuPc, TNATA, TCTA, TDAPB, TDATA, PANI, PEDOT and m-MTDATA. The method of claim 1, The doped layer is an organic light emitting display device, characterized in that formed of the same material as the hole injection layer. The method of claim 1, The p-type dopant is an organic light emitting device, characterized in that F ₄ -TCNQ or FeCl ₃ . The method of claim 1, The doped layer is an organic light emitting display device, characterized in that formed to a thickness of 0.45% to 10% based on the thickness of the hole injection layer. The method of claim 1, The thickness of the doped layer is an organic light emitting device, characterized in that 10 ~ 200Å. The method of claim 1, The doped layer is an organic light emitting device, characterized in that formed in the hole injection layer. The method of claim 1, The organic layer is an organic light emitting device, characterized in that further comprising an electron transport layer or an electron injection layer on the light emitting layer. Providing a substrate; Forming a lower electrode on the substrate; Sequentially forming a hole injection layer, a doping layer doped with a P-type dopant, a hole transport layer, and a light emitting layer on the lower electrode to form an organic layer; And Forming an upper electrode on the organic film; manufacturing method of an organic light emitting device comprising a. The method of claim 10, The hole injection layer is a method of manufacturing an organic light emitting device, characterized in that formed of one material selected from the group consisting of CuPc, TNATA, TCTA, TDAPB, TDATA, PANI, PEDOT and m-MTDATA. The method of claim 10, The doping layer is a method of manufacturing an organic light emitting device, characterized in that formed with the same material as the hole injection layer. The method of claim 10, The p-type dopant is a manufacturing method of an organic light emitting device, characterized in that F ₄ -TCNQ or FeCl ₃ . The method of claim 10, The forming of the organic layer may further include forming a hole injection layer after the doping layer is formed. The method of claim 10, The doping layer is a method of manufacturing an organic light emitting display device, characterized in that formed in a thickness of 0.45% to 10% based on the thickness of the hole injection layer. The method of claim 10, The thickness of the doped layer is a method of manufacturing an organic light emitting device, characterized in that formed in 10 ~ 200Å. The method of claim 10, The forming of the organic layer may further include forming an electron transport layer or an electron injection layer after forming the emission layer.

Images