[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPWO2020185360A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2020185360A5
JPWO2020185360A5 JP2021551898A JP2021551898A JPWO2020185360A5 JP WO2020185360 A5 JPWO2020185360 A5 JP WO2020185360A5 JP 2021551898 A JP2021551898 A JP 2021551898A JP 2021551898 A JP2021551898 A JP 2021551898A JP WO2020185360 A5 JPWO2020185360 A5 JP WO2020185360A5
Authority
JP
Japan
Prior art keywords
porous plate
pores
showerhead assembly
processing chamber
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021551898A
Other languages
Japanese (ja)
Other versions
JP2022523541A (en
JP7680361B2 (en
Publication date
Application filed filed Critical
Priority claimed from PCT/US2020/018679 external-priority patent/WO2020185360A1/en
Publication of JP2022523541A publication Critical patent/JP2022523541A/en
Publication of JPWO2020185360A5 publication Critical patent/JPWO2020185360A5/ja
Application granted granted Critical
Publication of JP7680361B2 publication Critical patent/JP7680361B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (20)

処理チャンバ用のシャワーヘッドアセンブリであって、
支持特徴を備えた支持構造、及び
少なくとも約50W/(mK)の熱伝導率を有し、かつ約100μm未満の平均直径を有する複数のポアを備えた多孔性プレートであって、該多孔性プレートのエッジの少なくとも一部が前記支持特徴上にある、多孔性プレート
を含む、シャワーヘッドアセンブリ。
A showerhead assembly for a processing chamber comprising:
A porous plate comprising: a support structure comprising supporting features; and a plurality of pores having a thermal conductivity of at least about 50 W/(mK) and having an average diameter of less than about 100 μm, a porous plate having at least a portion of its edge on said support feature.
前記複数のポアが、前記多孔性プレートの第1の表面から第2の表面まで延びる複数の連続した経路を形成する、請求項1に記載のシャワーヘッドアセンブリ。 2. The showerhead assembly of Claim 1, wherein the plurality of pores form a plurality of continuous pathways extending from the first surface to the second surface of the porous plate. 前記多孔性プレートが、少なくとも約200mmの直径を有する円形形状を有している、請求項1に記載のシャワーヘッドアセンブリ。 2. The showerhead assembly of Claim 1, wherein the porous plate has a circular shape with a diameter of at least about 200 mm. 前記複数のポアの数が、前記多孔性プレートの立方インチあたり少なくとも約60ポアである、請求項1に記載のシャワーヘッドアセンブリ。 2. The showerhead assembly of claim 1, wherein the number of pores of said plurality of pores is at least about 60 pores per cubic inch of said porous plate. 前記多孔性プレートの熱伝導率が少なくとも約75W/(mK)である、請求項1に記載のシャワーヘッドアセンブリ。 2. The showerhead assembly of claim 1, wherein the porous plate has a thermal conductivity of at least about 75 W/(mK). 前記複数のポアが約50μm未満の平均直径を有する、請求項1に記載のシャワーヘッドアセンブリ。 3. The showerhead assembly of Claim 1, wherein the plurality of pores have an average diameter of less than about 50[mu]m. 前記支持構造がクランププレートをさらに含み、前記多孔性プレートの前記エッジの少なくとも一部が、前記クランププレートと前記支持特徴との間に保持される、請求項1に記載のシャワーヘッドアセンブリ。 2. The showerhead assembly of Claim 1, wherein said support structure further comprises a clamp plate, and wherein at least a portion of said edge of said porous plate is held between said clamp plate and said support feature. 前記多孔性プレートが、炭化ケイ素、窒化アルミニウム、及びモリブデンのうちの1つを含む、請求項1に記載のシャワーヘッドアセンブリ。 The showerhead assembly of Claim 1, wherein the porous plate comprises one of silicon carbide, aluminum nitride, and molybdenum. 処理チャンバであって、
基板を支持するように構成された基板支持体、
前記処理チャンバの内部にガスを流すように構成されたシャワーヘッドアセンブリであって、該シャワーヘッドアセンブリが、
支持特徴を備えた支持構造と、
少なくとも約50W/(mK)の熱伝導率を有し、かつ約100μm未満の直径を有する複数のポアを備えた多孔性プレートであって、該多孔性プレートのエッジの少なくとも一部が前記支持特徴上にある、多孔性プレートと
を備えている、シャワーヘッドアセンブリ、及び
プロセスガスを前記シャワーヘッドアセンブリに供給するように構成されたガス供給源
を含む、処理チャンバ。
a processing chamber,
a substrate support configured to support a substrate;
A showerhead assembly configured to flow gas into the processing chamber, the showerhead assembly comprising:
a support structure with support features;
A porous plate having a thermal conductivity of at least about 50 W/(mK) and comprising a plurality of pores having a diameter of less than about 100 μm, wherein at least a portion of the edges of the porous plate are aligned with the support features. a showerhead assembly comprising an overlying porous plate; and a gas supply source configured to supply process gas to the showerhead assembly.
前記複数のポアが、前記多孔性プレートの第1の表面から第2の表面まで延びる複数の連続した経路を形成する、請求項9に記載の処理チャンバ。 10. The processing chamber of Claim 9, wherein the plurality of pores form a plurality of continuous pathways extending from the first surface to the second surface of the porous plate. 前記多孔性プレートが、少なくとも約200mmの直径を有する円形形状を有している、請求項9に記載の処理チャンバ。 10. The processing chamber of Claim 9, wherein the porous plate has a circular shape with a diameter of at least about 200 mm. 前記複数のポアの数が、前記多孔性プレートの立方インチあたり少なくとも約60ポアである、請求項9に記載の処理チャンバ。 10. The processing chamber of claim 9, wherein the number of said plurality of pores is at least about 60 pores per cubic inch of said porous plate. 前記多孔性プレートの熱伝導率が少なくとも約75W/(mK)である、請求項9に記載の処理チャンバ。 10. The processing chamber of claim 9, wherein the porous plate has a thermal conductivity of at least about 75 W/(mK). 前記複数のポアが約50μm未満の平均直径を有する、請求項9に記載の処理チャンバ。 10. The processing chamber of claim 9, wherein said plurality of pores have an average diameter of less than about 50[mu]m. 前記支持構造がクランププレートをさらに含み、前記多孔性プレートの前記エッジの少なくとも一部が前記クランププレートと前記支持特徴との間に保持される、請求項9に記載の処理チャンバ。 10. The processing chamber of Claim 9, wherein said support structure further comprises a clamp plate, and wherein at least a portion of said edge of said porous plate is held between said clamp plate and said support feature. 前記多孔性プレートが、炭化ケイ素、窒化アルミニウム、及びモリブデンのうちの1つを含む、請求項9に記載の処理チャンバ。 10. The processing chamber of Claim 9, wherein the porous plate comprises one of silicon carbide, aluminum nitride, and molybdenum. 処理チャンバのシャワーヘッドアセンブリのための多孔性プレートであって、該多孔性プレートが、 A porous plate for a showerhead assembly of a processing chamber, the porous plate comprising:
不規則なパターンに従って配置された複数のポアと、 a plurality of pores arranged according to an irregular pattern;
前記複数のポアから形成された複数の連続した経路と a plurality of continuous pathways formed from the plurality of pores;
を備え、前記複数の連続した経路が、前記多孔性プレートの第1の表面から第2の表面まで延び、wherein said plurality of continuous paths extend from a first surface to a second surface of said porous plate;
前記多孔性プレートが少なくとも約50W/(mK)の熱伝導率を有する、多孔性プレート。 A porous plate, wherein said porous plate has a thermal conductivity of at least about 50 W/(mK).
前記複数のポアが、約100μm未満の平均直径を有する、請求項17に記載の多孔性プレート。 18. The porous plate of claim 17, wherein said plurality of pores have an average diameter of less than about 100 [mu]m. 前記複数の連続した経路の数が、前記多孔性プレートの立方インチあたり少なくとも約60ポアである、請求項17に記載の多孔性プレート。 18. The porous plate of claim 17, wherein the number of contiguous channels is at least about 60 pores per cubic inch of the porous plate. 前記複数のポアが約50μm未満の平均直径を有する、請求項17に記載の多孔性プレート。 18. The porous plate of claim 17, wherein said plurality of pores have an average diameter of less than about 50[mu]m.
JP2021551898A 2019-03-08 2020-02-18 Porous showerhead for processing chamber - Patents.com Active JP7680361B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962815581P 2019-03-08 2019-03-08
US62/815,581 2019-03-08
PCT/US2020/018679 WO2020185360A1 (en) 2019-03-08 2020-02-18 Porous showerhead for a processing chamber

Publications (3)

Publication Number Publication Date
JP2022523541A JP2022523541A (en) 2022-04-25
JPWO2020185360A5 true JPWO2020185360A5 (en) 2023-02-28
JP7680361B2 JP7680361B2 (en) 2025-05-20

Family

ID=72336172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021551898A Active JP7680361B2 (en) 2019-03-08 2020-02-18 Porous showerhead for processing chamber - Patents.com

Country Status (7)

Country Link
US (1) US11111582B2 (en)
JP (1) JP7680361B2 (en)
KR (1) KR20210126130A (en)
CN (1) CN113490765A (en)
SG (1) SG11202108196QA (en)
TW (1) TWI816990B (en)
WO (1) WO2020185360A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024191656A1 (en) * 2023-03-15 2024-09-19 Silfex, Inc. Porous showerheads for substrate processing systems

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950020993A (en) 1993-12-22 1995-07-26 김광호 Semiconductor manufacturing device
JPH0878192A (en) * 1994-09-06 1996-03-22 Fujitsu Ltd Plasma processing apparatus and plasma processing method
JPH1027784A (en) * 1996-05-08 1998-01-27 Tokyo Electron Ltd Apparatus for low-pressure processing
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2003007682A (en) 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd Electrode member for plasma processing equipment
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
JP2003282462A (en) 2002-03-27 2003-10-03 Kyocera Corp Shower plate, method of manufacturing the same, and shower head using the same
JP2004352513A (en) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd Parts for semiconductor manufacturing apparatus using aluminum nitride porous body and semiconductor manufacturing apparatus
JP2004356124A (en) 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd Parts for semiconductor manufacturing equipment and semiconductor manufacturing equipment using porous ceramics
JP4312063B2 (en) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 Thin film manufacturing apparatus and method
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
JP5010234B2 (en) * 2006-10-23 2012-08-29 北陸成型工業株式会社 Shower plate in which gas discharge hole member is integrally sintered and manufacturing method thereof
JP2008205219A (en) * 2007-02-20 2008-09-04 Masato Toshima Showerhead, and cvd apparatus using the same showerhead
CN100577866C (en) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 Gas shower head assembly used in plasma reaction chamber, its manufacturing method and its refurbishment and reuse method
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
KR101249999B1 (en) * 2010-08-12 2013-04-03 주식회사 디엠에스 Apparatus for chemical vapor deposition
US8911553B2 (en) 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
JP6002149B2 (en) * 2010-12-23 2016-10-05 ネクター セラピューティクス Polymer-sunitinib conjugate
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
TW201717262A (en) * 2015-10-26 2017-05-16 應用材料股份有限公司 High productivity PECVD tool for wafer processing of semiconductor manufacturing
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
CN208098420U (en) * 2018-02-11 2018-11-16 佛山华派机械科技有限公司 A kind of plate superposing type porous nozzle

Similar Documents

Publication Publication Date Title
US11769683B2 (en) Chamber component with protective ceramic coating containing yttrium, aluminum and oxygen
JP3336897B2 (en) Susceptor for vapor phase epitaxy
TWI733663B (en) Chamber components for epitaxial growth apparatus (1)
JP4669476B2 (en) Holder for supporting wafers during semiconductor manufacturing
CN100470756C (en) Electrostatic Chuck
US11085112B2 (en) Susceptor with ring to limit backside deposition
JP2010514160A5 (en)
JP2009531858A5 (en)
JP6333338B2 (en) Susceptor for holding a semiconductor wafer having an alignment notch, method for depositing a layer on a semiconductor wafer, and semiconductor wafer
KR20010082657A (en) Fastening device for a purge ring
US20140217665A1 (en) Substrate support with controlled sealing gap
TW202147371A (en) Electrostatic edge ring mounting system for substrate processing
JP4451455B2 (en) Vapor growth apparatus and support base
US20250154653A1 (en) Substrate-carrier structure
JPWO2020185360A5 (en)
KR101585924B1 (en) Reactor for thermal CVD SiC coating apparatus
JP2003051485A (en) Coating silicon electrode plate for plasma etching
JP2023545067A (en) Heated substrate support to minimize heat loss and improve uniformity
JP7678120B2 (en) Shower plate
TWI882980B (en) Showerhead with configurable gas outlets
KR102337411B1 (en) Deposition apparatus
KR20250038740A (en) Method of coating chamber components
CN118407025A (en) A component, equipment and carrying device for chemical vapor deposition
JP2008130695A (en) Holder for heat treatment
JP2019121613A (en) Susceptor