JPS6457690A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To obtain a manufacturing method having a good reproducibility for a semiconductor laser that enables high speed modulation, by a method wherein a dry etching is applied for obtaining a desired buried width and at the same time, a selective etching is applied for forming the gap between a clad layer and a buffer layer, and the like. CONSTITUTION:A layer 12 having the same conductivity type as that of a one conductivity type substrate 11, an active layer 13 and a layer 14 having a conductivity type opposite to that of the substrate 11 are formed laminatedly in order on the substrate 11 and thereafter, grooves 13a to reach the layer 12 are formed by plasma etching in a fine width along both side edges of a striped part, which is used as a luminous region consisting of the layers 13 and 14. Then, a clad layer 17, with which the above grooves 13a are filled and the upper parts of the above laminated layers 12-14 are covered and which has a conductivity type opposite to that of the substrate, and a contact layer 18, which is laminated on this layer 17 and has the same conductivity type as that of the substrate, are formed. Then, an etching to reach the layer 14 is performed on parts of the layers 17 and 18 to form an electrode area including the upper part of the striped luminous region. Moreover, an etching is performed on the exposed layers 14 and 13 to expose parts, with which the grooves 13a are filled, of the layer 17.