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JPS6436049A - Semiconductor integrated circuit and manufacture thereof - Google Patents

Semiconductor integrated circuit and manufacture thereof

Info

Publication number
JPS6436049A
JPS6436049A JP19160087A JP19160087A JPS6436049A JP S6436049 A JPS6436049 A JP S6436049A JP 19160087 A JP19160087 A JP 19160087A JP 19160087 A JP19160087 A JP 19160087A JP S6436049 A JPS6436049 A JP S6436049A
Authority
JP
Japan
Prior art keywords
wiring
metal
insulating film
pattern
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19160087A
Other languages
Japanese (ja)
Inventor
Noriaki Oba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP19160087A priority Critical patent/JPS6436049A/en
Publication of JPS6436049A publication Critical patent/JPS6436049A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make the electrical insulation good by a method wherein two kinds of wiring parts having different wiring widths exist in an identical metal wiring layer on a semiconductor substrate and the central part of the wiring width in the wider wiring part is formed to be step-like and thick so that a cavity part is hard to produce inside an insulating film and that a tip part of the metal wiring part hardly falls. CONSTITUTION:Resist patterns 5, 5' corresponding to buried wiring patterns are formed on a metal film 3; the resist pattern 5' for ordinary single wiring use is formed as a narrow pattern on a second-thickness part of the metal film 3; the resist pattern 5 requiring an especially low resistance value covers a first-thickness part and is formed as a wide pattern extended to the second- thickness part on both sides. Then, an exposed part is removed completely by making use of said resist patterns 5, 5' as masks. By removing the resist patterns 5, 5', it is possible to obtain a metal wiring part where a narrow wiring part 6 and a thick wiring part 7 having stepped parts exist in an identical wiring layer. After that, if an insulating film is deposited, a cavity is hard to produce inside the insulating film; accordingly, the reliability is enhanced.
JP19160087A 1987-07-31 1987-07-31 Semiconductor integrated circuit and manufacture thereof Pending JPS6436049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19160087A JPS6436049A (en) 1987-07-31 1987-07-31 Semiconductor integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19160087A JPS6436049A (en) 1987-07-31 1987-07-31 Semiconductor integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6436049A true JPS6436049A (en) 1989-02-07

Family

ID=16277335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19160087A Pending JPS6436049A (en) 1987-07-31 1987-07-31 Semiconductor integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6436049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512514A (en) * 1994-11-08 1996-04-30 Spider Systems, Inc. Self-aligned via and contact interconnect manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101668A (en) * 1980-12-17 1982-06-24 Matsushita Electric Ind Co Ltd Etching method
JPS5818941A (en) * 1981-07-27 1983-02-03 Nec Corp Manufacture of semiconductor device
JPS6295857A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101668A (en) * 1980-12-17 1982-06-24 Matsushita Electric Ind Co Ltd Etching method
JPS5818941A (en) * 1981-07-27 1983-02-03 Nec Corp Manufacture of semiconductor device
JPS6295857A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512514A (en) * 1994-11-08 1996-04-30 Spider Systems, Inc. Self-aligned via and contact interconnect manufacturing method
WO1997039478A1 (en) * 1994-11-08 1997-10-23 Spider Systems, Inc. Self-aligned via and contact interconnect manufacturing method

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