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JPS568877A - Charge coupling element - Google Patents

Charge coupling element

Info

Publication number
JPS568877A
JPS568877A JP8393279A JP8393279A JPS568877A JP S568877 A JPS568877 A JP S568877A JP 8393279 A JP8393279 A JP 8393279A JP 8393279 A JP8393279 A JP 8393279A JP S568877 A JPS568877 A JP S568877A
Authority
JP
Japan
Prior art keywords
film
transfer
interval
oxide films
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8393279A
Other languages
Japanese (ja)
Other versions
JPS6152587B2 (en
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8393279A priority Critical patent/JPS568877A/en
Publication of JPS568877A publication Critical patent/JPS568877A/en
Publication of JPS6152587B2 publication Critical patent/JPS6152587B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To perform uniform and high speed charge transfer by selectively converting one side of a conductive film installed on an insulating film into an insulating film wherein the interval between transfer electrodes is remarkably shortened. CONSTITUTION:Doped poly-Sis 511a, 512a... with the width dc, interval dd are formed on the oxide thin film 2 of an N-type Si substrate and covered by a nitride film 7. The nitride film is etched to be in the condition of shifting by do in the direction of transfer and oxide films 8 with the thickness of t are formed. Selective etching is made for the nitride film 7 and an Al film is evaporated on whole of the surface to etch Al on the oxide films 8. Transfer electrodes composed by the combination of the high concentrated doped poly Si layers 511a... and Al film 511b... are insulted by the oxide films 8 and the interval between electrodes becomes the thickness of the film t from the view point of CCD operation. Because the interval is extremely small and the variation is minimized, high speed transfer is made possible and the transfer speed for each electrode is uniform, while high integration is also made possible.
JP8393279A 1979-07-04 1979-07-04 Charge coupling element Granted JPS568877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8393279A JPS568877A (en) 1979-07-04 1979-07-04 Charge coupling element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8393279A JPS568877A (en) 1979-07-04 1979-07-04 Charge coupling element

Publications (2)

Publication Number Publication Date
JPS568877A true JPS568877A (en) 1981-01-29
JPS6152587B2 JPS6152587B2 (en) 1986-11-13

Family

ID=13816363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8393279A Granted JPS568877A (en) 1979-07-04 1979-07-04 Charge coupling element

Country Status (1)

Country Link
JP (1) JPS568877A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574162A (en) * 1980-06-10 1982-01-09 Sony Corp Manufacture of charge transfer device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313951A (en) * 1976-07-26 1978-02-08 Citizen Watch Co Ltd Watchcase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313951A (en) * 1976-07-26 1978-02-08 Citizen Watch Co Ltd Watchcase

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574162A (en) * 1980-06-10 1982-01-09 Sony Corp Manufacture of charge transfer device

Also Published As

Publication number Publication date
JPS6152587B2 (en) 1986-11-13

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