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JPS55129333A - Scale-down projection aligner and mask used for this - Google Patents

Scale-down projection aligner and mask used for this

Info

Publication number
JPS55129333A
JPS55129333A JP3548779A JP3548779A JPS55129333A JP S55129333 A JPS55129333 A JP S55129333A JP 3548779 A JP3548779 A JP 3548779A JP 3548779 A JP3548779 A JP 3548779A JP S55129333 A JPS55129333 A JP S55129333A
Authority
JP
Japan
Prior art keywords
patterns
reticle
scale
kinds
effective region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3548779A
Other languages
Japanese (ja)
Inventor
Takao Kawanabe
Soichi Tsuuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548779A priority Critical patent/JPS55129333A/en
Publication of JPS55129333A publication Critical patent/JPS55129333A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Holders For Sensitive Materials And Originals (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To simultaneously process two or more kinds in the same process and achieve the reduction of processes by disposing a plurality of patterns of different kinds to the effective region within one reticle.
CONSTITUTION: The effective region in a reticle 4, i.e., the effective diameter of a scale-down lens, is shown by the alternate long and short dash line 5. A plurality of patterns A, B, C of different kinds are provided within this effective region. The A, B, C belong to the same layer of the semiconductor wafer surfaces to be processed and are processed by the same process. The use of such reticle enables three kinds of patterns to be printed simultaneously in the wafer. Thereupon, fixing the reticle 4 in a mask support frame 6 and opening and closing a shield plate 7 make possible the selective projection of each of different patterns of the mask. By providing the goodness of the accuracy of the scale-down projection system and simultaneously printing the patterns of different kinds in this way, the reduction in the number of steps in small-volume diversified-kind production is made possible.
COPYRIGHT: (C)1980,JPO&Japio
JP3548779A 1979-03-28 1979-03-28 Scale-down projection aligner and mask used for this Pending JPS55129333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3548779A JPS55129333A (en) 1979-03-28 1979-03-28 Scale-down projection aligner and mask used for this

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548779A JPS55129333A (en) 1979-03-28 1979-03-28 Scale-down projection aligner and mask used for this

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60030353A Division JPS60221758A (en) 1985-02-20 1985-02-20 Exposing method by reducing projection
JP60030354A Division JPS60221757A (en) 1985-02-20 1985-02-20 exposure mask

Publications (1)

Publication Number Publication Date
JPS55129333A true JPS55129333A (en) 1980-10-07

Family

ID=12443099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3548779A Pending JPS55129333A (en) 1979-03-28 1979-03-28 Scale-down projection aligner and mask used for this

Country Status (1)

Country Link
JP (1) JPS55129333A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814137A (en) * 1981-07-16 1983-01-26 Fujitsu Ltd Reduction projection exposure method
JPS58137839A (en) * 1982-02-12 1983-08-16 Toshiba Corp Production of mask for semiconductor
JPS6045252A (en) * 1983-08-23 1985-03-11 Canon Inc Illuminating system of projecting and exposing device
JPS6074518A (en) * 1983-09-30 1985-04-26 Hitachi Ltd X-ray exposing process and device
JPS6136930A (en) * 1984-07-30 1986-02-21 Nec Corp Reduction projection type exposure device
JPS61247025A (en) * 1985-04-25 1986-11-04 Canon Inc Exposure equipment
JPS6243125A (en) * 1985-08-21 1987-02-25 Canon Inc Pattern printing machine
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6323318A (en) * 1987-04-13 1988-01-30 Canon Inc Projection exposure device
JPS6323317A (en) * 1987-04-13 1988-01-30 Canon Inc Projection exposure device
JPS6323319A (en) * 1987-04-13 1988-01-30 Canon Inc Methofd for projection exposure
JPS6370418A (en) * 1986-09-11 1988-03-30 Canon Inc Semiconductor exposure device
JPH01286416A (en) * 1988-05-13 1989-11-17 Nec Corp Integrated circuit pattern exposing method
JPH0262541A (en) * 1988-08-29 1990-03-02 Nec Corp Production of semiconductor product of semi-customized goods
JPH02280314A (en) * 1989-04-21 1990-11-16 Nippon Telegr & Teleph Corp <Ntt> Device and method of pattern creation
JPH05206014A (en) * 1991-10-22 1993-08-13 Internatl Business Mach Corp <Ibm> Mask for lithography, designing and alignment of lithographic mask and sequential exposure system
EP1189111A4 (en) * 1999-05-27 2002-11-06 Kem Tec Japan Co Ltd Production device for printed board, production method for printed board and printed board
EP1048984A3 (en) * 1999-04-30 2004-05-19 Infineon Technologies AG Method and apparatus for reducing non-uniformities in the manufacture of semiconductive devices
US7362410B2 (en) 2002-10-19 2008-04-22 Lg.Philips Lcd Co., Ltd. Method for designing mask and fabricating panel
US7400375B2 (en) 2002-10-19 2008-07-15 Lg Display Co., Ltd. Method for designing mask and fabricating panel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS5339075A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Step and repeat exposure method of masks

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS5339075A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Step and repeat exposure method of masks

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814137A (en) * 1981-07-16 1983-01-26 Fujitsu Ltd Reduction projection exposure method
JPS58137839A (en) * 1982-02-12 1983-08-16 Toshiba Corp Production of mask for semiconductor
JPS6045252A (en) * 1983-08-23 1985-03-11 Canon Inc Illuminating system of projecting and exposing device
JPS6074518A (en) * 1983-09-30 1985-04-26 Hitachi Ltd X-ray exposing process and device
JPS6136930A (en) * 1984-07-30 1986-02-21 Nec Corp Reduction projection type exposure device
JPS61247025A (en) * 1985-04-25 1986-11-04 Canon Inc Exposure equipment
JPS6243125A (en) * 1985-08-21 1987-02-25 Canon Inc Pattern printing machine
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6370418A (en) * 1986-09-11 1988-03-30 Canon Inc Semiconductor exposure device
JPS6323319A (en) * 1987-04-13 1988-01-30 Canon Inc Methofd for projection exposure
JPS6323317A (en) * 1987-04-13 1988-01-30 Canon Inc Projection exposure device
JPS6323318A (en) * 1987-04-13 1988-01-30 Canon Inc Projection exposure device
JPH01286416A (en) * 1988-05-13 1989-11-17 Nec Corp Integrated circuit pattern exposing method
JPH0262541A (en) * 1988-08-29 1990-03-02 Nec Corp Production of semiconductor product of semi-customized goods
JPH02280314A (en) * 1989-04-21 1990-11-16 Nippon Telegr & Teleph Corp <Ntt> Device and method of pattern creation
JPH05206014A (en) * 1991-10-22 1993-08-13 Internatl Business Mach Corp <Ibm> Mask for lithography, designing and alignment of lithographic mask and sequential exposure system
EP1048984A3 (en) * 1999-04-30 2004-05-19 Infineon Technologies AG Method and apparatus for reducing non-uniformities in the manufacture of semiconductive devices
EP1189111A4 (en) * 1999-05-27 2002-11-06 Kem Tec Japan Co Ltd Production device for printed board, production method for printed board and printed board
US7362410B2 (en) 2002-10-19 2008-04-22 Lg.Philips Lcd Co., Ltd. Method for designing mask and fabricating panel
US7400375B2 (en) 2002-10-19 2008-07-15 Lg Display Co., Ltd. Method for designing mask and fabricating panel

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