JPS55129333A - Scale-down projection aligner and mask used for this - Google Patents
Scale-down projection aligner and mask used for thisInfo
- Publication number
- JPS55129333A JPS55129333A JP3548779A JP3548779A JPS55129333A JP S55129333 A JPS55129333 A JP S55129333A JP 3548779 A JP3548779 A JP 3548779A JP 3548779 A JP3548779 A JP 3548779A JP S55129333 A JPS55129333 A JP S55129333A
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- reticle
- scale
- kinds
- effective region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Holders For Sensitive Materials And Originals (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE: To simultaneously process two or more kinds in the same process and achieve the reduction of processes by disposing a plurality of patterns of different kinds to the effective region within one reticle.
CONSTITUTION: The effective region in a reticle 4, i.e., the effective diameter of a scale-down lens, is shown by the alternate long and short dash line 5. A plurality of patterns A, B, C of different kinds are provided within this effective region. The A, B, C belong to the same layer of the semiconductor wafer surfaces to be processed and are processed by the same process. The use of such reticle enables three kinds of patterns to be printed simultaneously in the wafer. Thereupon, fixing the reticle 4 in a mask support frame 6 and opening and closing a shield plate 7 make possible the selective projection of each of different patterns of the mask. By providing the goodness of the accuracy of the scale-down projection system and simultaneously printing the patterns of different kinds in this way, the reduction in the number of steps in small-volume diversified-kind production is made possible.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548779A JPS55129333A (en) | 1979-03-28 | 1979-03-28 | Scale-down projection aligner and mask used for this |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548779A JPS55129333A (en) | 1979-03-28 | 1979-03-28 | Scale-down projection aligner and mask used for this |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60030353A Division JPS60221758A (en) | 1985-02-20 | 1985-02-20 | Exposing method by reducing projection |
JP60030354A Division JPS60221757A (en) | 1985-02-20 | 1985-02-20 | exposure mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55129333A true JPS55129333A (en) | 1980-10-07 |
Family
ID=12443099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3548779A Pending JPS55129333A (en) | 1979-03-28 | 1979-03-28 | Scale-down projection aligner and mask used for this |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55129333A (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814137A (en) * | 1981-07-16 | 1983-01-26 | Fujitsu Ltd | Reduction projection exposure method |
JPS58137839A (en) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | Production of mask for semiconductor |
JPS6045252A (en) * | 1983-08-23 | 1985-03-11 | Canon Inc | Illuminating system of projecting and exposing device |
JPS6074518A (en) * | 1983-09-30 | 1985-04-26 | Hitachi Ltd | X-ray exposing process and device |
JPS6136930A (en) * | 1984-07-30 | 1986-02-21 | Nec Corp | Reduction projection type exposure device |
JPS61247025A (en) * | 1985-04-25 | 1986-11-04 | Canon Inc | Exposure equipment |
JPS6243125A (en) * | 1985-08-21 | 1987-02-25 | Canon Inc | Pattern printing machine |
JPS6247129A (en) * | 1985-08-26 | 1987-02-28 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6323318A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Projection exposure device |
JPS6323317A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Projection exposure device |
JPS6323319A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Methofd for projection exposure |
JPS6370418A (en) * | 1986-09-11 | 1988-03-30 | Canon Inc | Semiconductor exposure device |
JPH01286416A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Integrated circuit pattern exposing method |
JPH0262541A (en) * | 1988-08-29 | 1990-03-02 | Nec Corp | Production of semiconductor product of semi-customized goods |
JPH02280314A (en) * | 1989-04-21 | 1990-11-16 | Nippon Telegr & Teleph Corp <Ntt> | Device and method of pattern creation |
JPH05206014A (en) * | 1991-10-22 | 1993-08-13 | Internatl Business Mach Corp <Ibm> | Mask for lithography, designing and alignment of lithographic mask and sequential exposure system |
EP1189111A4 (en) * | 1999-05-27 | 2002-11-06 | Kem Tec Japan Co Ltd | Production device for printed board, production method for printed board and printed board |
EP1048984A3 (en) * | 1999-04-30 | 2004-05-19 | Infineon Technologies AG | Method and apparatus for reducing non-uniformities in the manufacture of semiconductive devices |
US7362410B2 (en) | 2002-10-19 | 2008-04-22 | Lg.Philips Lcd Co., Ltd. | Method for designing mask and fabricating panel |
US7400375B2 (en) | 2002-10-19 | 2008-07-15 | Lg Display Co., Ltd. | Method for designing mask and fabricating panel |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
JPS5339075A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Step and repeat exposure method of masks |
-
1979
- 1979-03-28 JP JP3548779A patent/JPS55129333A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
JPS5339075A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Step and repeat exposure method of masks |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814137A (en) * | 1981-07-16 | 1983-01-26 | Fujitsu Ltd | Reduction projection exposure method |
JPS58137839A (en) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | Production of mask for semiconductor |
JPS6045252A (en) * | 1983-08-23 | 1985-03-11 | Canon Inc | Illuminating system of projecting and exposing device |
JPS6074518A (en) * | 1983-09-30 | 1985-04-26 | Hitachi Ltd | X-ray exposing process and device |
JPS6136930A (en) * | 1984-07-30 | 1986-02-21 | Nec Corp | Reduction projection type exposure device |
JPS61247025A (en) * | 1985-04-25 | 1986-11-04 | Canon Inc | Exposure equipment |
JPS6243125A (en) * | 1985-08-21 | 1987-02-25 | Canon Inc | Pattern printing machine |
JPS6247129A (en) * | 1985-08-26 | 1987-02-28 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6370418A (en) * | 1986-09-11 | 1988-03-30 | Canon Inc | Semiconductor exposure device |
JPS6323319A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Methofd for projection exposure |
JPS6323317A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Projection exposure device |
JPS6323318A (en) * | 1987-04-13 | 1988-01-30 | Canon Inc | Projection exposure device |
JPH01286416A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Integrated circuit pattern exposing method |
JPH0262541A (en) * | 1988-08-29 | 1990-03-02 | Nec Corp | Production of semiconductor product of semi-customized goods |
JPH02280314A (en) * | 1989-04-21 | 1990-11-16 | Nippon Telegr & Teleph Corp <Ntt> | Device and method of pattern creation |
JPH05206014A (en) * | 1991-10-22 | 1993-08-13 | Internatl Business Mach Corp <Ibm> | Mask for lithography, designing and alignment of lithographic mask and sequential exposure system |
EP1048984A3 (en) * | 1999-04-30 | 2004-05-19 | Infineon Technologies AG | Method and apparatus for reducing non-uniformities in the manufacture of semiconductive devices |
EP1189111A4 (en) * | 1999-05-27 | 2002-11-06 | Kem Tec Japan Co Ltd | Production device for printed board, production method for printed board and printed board |
US7362410B2 (en) | 2002-10-19 | 2008-04-22 | Lg.Philips Lcd Co., Ltd. | Method for designing mask and fabricating panel |
US7400375B2 (en) | 2002-10-19 | 2008-07-15 | Lg Display Co., Ltd. | Method for designing mask and fabricating panel |
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