JPH03258475A - Excimer laser beam machining method - Google Patents
Excimer laser beam machining methodInfo
- Publication number
- JPH03258475A JPH03258475A JP2054860A JP5486090A JPH03258475A JP H03258475 A JPH03258475 A JP H03258475A JP 2054860 A JP2054860 A JP 2054860A JP 5486090 A JP5486090 A JP 5486090A JP H03258475 A JPH03258475 A JP H03258475A
- Authority
- JP
- Japan
- Prior art keywords
- excimer laser
- solvent
- electrodes
- membered ring
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003754 machining Methods 0.000 title description 4
- 238000000034 method Methods 0.000 title description 2
- 239000002904 solvent Substances 0.000 claims abstract description 32
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract 3
- 239000011368 organic material Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 8
- 238000009835 boiling Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 10
- 239000004642 Polyimide Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- 238000005406 washing Methods 0.000 abstract description 3
- 125000004122 cyclic group Chemical group 0.000 abstract 4
- 238000009413 insulation Methods 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- DRTQHJPVMGBUCF-XVFCMESISA-N Uridine Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C(=O)NC(=O)C=C1 DRTQHJPVMGBUCF-XVFCMESISA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- -1 pyurine Chemical compound 0.000 description 2
- MKHWMOLAIAIJRP-UHFFFAOYSA-N C(C)O.C1(=CC=CC=C1)C.C1=CC=CC=C1 Chemical compound C(C)O.C1(=CC=CC=C1)C.C1=CC=CC=C1 MKHWMOLAIAIJRP-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- DRTQHJPVMGBUCF-PSQAKQOGSA-N beta-L-uridine Natural products O[C@H]1[C@@H](O)[C@H](CO)O[C@@H]1N1C(=O)NC(=O)C=C1 DRTQHJPVMGBUCF-PSQAKQOGSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011280 coal tar Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- DRTQHJPVMGBUCF-UHFFFAOYSA-N uracil arabinoside Natural products OC1C(O)C(CO)OC1N1C(=O)NC(=O)C=C1 DRTQHJPVMGBUCF-UHFFFAOYSA-N 0.000 description 1
- 229940045145 uridine Drugs 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
Abstract
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、エキシマレーザ加工方法の改良に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to improvements in excimer laser processing methods.
C従来の技術と課題]
周知の如く、紫外線領域で発振するレーザであるエキシ
マレーザはその光化学的分解作用により、物質を非熱的
に分解除去するため、熱的な変形を生じにくい。従って
、精密加工に応用されている。C. Prior Art and Problems] As is well known, an excimer laser, which is a laser that oscillates in the ultraviolet region, decomposes and removes substances non-thermally through its photochemical decomposition action, so it is less likely to undergo thermal deformation. Therefore, it is applied to precision machining.
特に、近年高密度化が進んでいる電気回路基板の精密加
工にレーザ加工が用いられている。この電気回路基板と
しては、安価で絶縁性に優れたプラスチック等の有機系
材料か用いれている。これらの有機系材料は高温になる
と熱変形を生しるため、YAGレーザ、CO2レーザの
ような熱加工レーザては微細な精密加工は困難である。In particular, laser machining is used for precision machining of electric circuit boards whose density has been increasing in recent years. This electric circuit board is made of organic materials such as plastics, which are inexpensive and have excellent insulation properties. Since these organic materials undergo thermal deformation when exposed to high temperatures, fine precision processing is difficult with thermal processing lasers such as YAG lasers and CO2 lasers.
一方、エキンマーサはその高いエネルギーで材料の分子
間結合を切断して分解するため、熱発生か前記レーザに
比べて著しく少なく 、D、1mm以下の穴あけ等の精
密な加工が可能となる。しかし、エキシマレーザを有機
系材料に照射した場合、材料の煤が発生し、周囲に黒く
付着する。この現象については例えば電気学会、光・量
子デバイス研究会、 OQ D −89−54rエキ
シマレーザによるポリイミドの分解除去加工J (19
89)に詳細に記載しである。On the other hand, since the Ekinmercer uses its high energy to break and decompose the intermolecular bonds of the material, it generates significantly less heat than the laser, making it possible to perform precise processing such as drilling holes of 1 mm or less. However, when an organic material is irradiated with an excimer laser, soot is generated from the material and adheres to the surrounding area in black. Regarding this phenomenon, for example, the Institute of Electrical Engineers of Japan, Optical and Quantum Device Study Group, Decomposition and Removal Processing of Polyimide Using OQ D-89-54r Excimer Laser J (19
89).
この付着したカーボンは外観を損なうが、アルコール等
で拭き取れば目視上は除去できる。しかし、材料表面に
付着したカーボンは強固に付着しており、アルコールを
用いた超音波洗浄等では除去できない。このため、ポリ
イミド等の電気回路基板をエキシマレーザで分解除去加
工した場合には、エキシマレーザ照射近傍の基板表面の
電気抵抗が低下し、著しい場合には導通状態となる。つ
まり、エキシマレーザ加工を基板の両面の導通路を形成
する、いわゆるスルホールの穴加工に用いる場合は問題
はないか、絶縁か必要な回路パターンの近傍でのエキシ
マレーザ加工は不可能ということになる。This attached carbon impairs the appearance, but can be visually removed by wiping it off with alcohol or the like. However, carbon attached to the material surface is firmly attached and cannot be removed by ultrasonic cleaning using alcohol or the like. For this reason, when an electrical circuit board made of polyimide or the like is decomposed and removed using an excimer laser, the electrical resistance of the board surface near the excimer laser irradiation decreases, and in severe cases it becomes conductive. In other words, is there any problem when using excimer laser processing to form conductive paths on both sides of the board, so-called through holes? Excimer laser processing is impossible near circuit patterns that require insulation. .
なお、エキシマレーザの照射エネルギー密度を高くする
と、絶縁性の低下が低減される。また、エキシマレーザ
照射直後に加工物をアルコール超音波洗浄することによ
りある程度高抵抗化する等の対策が採られているか、完
全に絶縁性を得ることは不可能であった。特に、スルホ
ール等の基板に穴あけを行った場合、穴の壁面に付着し
たカーボンを除去することは、非常に困難となっている
。Note that when the irradiation energy density of the excimer laser is increased, the deterioration in insulation properties is reduced. In addition, measures such as increasing the resistance to some extent by washing the workpiece with alcohol ultrasonic waves immediately after excimer laser irradiation have been taken, or it has been impossible to obtain complete insulation. In particular, when holes such as through holes are made in a substrate, it is extremely difficult to remove carbon adhering to the walls of the holes.
このため、近年の高密度回路のような配線パターン間隙
が小さい回路基板の加工にエキシマレーザを適用するこ
とは問題があった。For this reason, there is a problem in applying the excimer laser to processing circuit boards with small wiring pattern gaps, such as those used in recent high-density circuits.
本発明は上記事情に鑑みてなされたもので、有機系材料
にエキシマレーザを照射して該有機系材料を分解除去し
た後、含チッ素6員環溶剤で洗浄することにより、有機
系材料に付着したカーボンの分解生成分を完全に除去し
えるエキシマレーザ加工方法を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and the organic material is decomposed and removed by irradiating the organic material with an excimer laser, and then washed with a nitrogen-containing six-membered ring solvent. It is an object of the present invention to provide an excimer laser processing method that can completely remove the decomposition products of attached carbon.
[課題を解決するための手段と作用]
本発明者らは、エキシマレーザ加工後の回路基板を種々
の溶媒を用いた洗浄テストを繰返したところ、含チッ素
6員環構造を有する溶剤を用いて洗浄すると、完全に絶
縁性が回復することを見出だした。[Means and effects for solving the problem] The present inventors repeatedly conducted cleaning tests using various solvents on circuit boards after excimer laser processing, and found that a solvent having a nitrogen-containing six-membered ring structure was used. It was discovered that the insulating properties were completely restored by washing with water.
上記現象のメカニズムについては不明確であるが、上記
溶剤の多くが石炭乾留によって得られるコールタールに
含有される、いわゆるタール塩基類に属することから、
カーボンに対する溶解度が大きいのではないかと推測さ
れる。Although the mechanism of the above phenomenon is unclear, many of the above solvents belong to the so-called tar bases contained in coal tar obtained by coal carbonization.
It is presumed that it has a high solubility in carbon.
ところで、上記含チッ素環構造を有する溶媒で回路基板
を洗浄すると絶縁性は回復するが、これらの化合物は沸
点か高く、乾燥によっても微量残存しやすく、異臭、悪
臭を放つ。このため、その後、水、炭化水素、ハロゲン
化炭化水素、アルコール、エーテル、ケトン、エステル
等の前記含チッ素6員環溶剤よりも低沸点でかつ前記含
チッ素6員環溶剤と混合可能な溶剤で2次洗浄すること
か望ましい。By the way, when a circuit board is cleaned with a solvent having a nitrogen-containing ring structure, the insulation properties are restored, but these compounds have a high boiling point and tend to remain in trace amounts even after drying, giving off a strange or foul odor. Therefore, after that, water, hydrocarbons, halogenated hydrocarbons, alcohols, ethers, ketones, esters, etc., which have a boiling point lower than that of the nitrogen-containing six-membered ring solvent and can be mixed with the nitrogen-containing six-membered ring solvent. It is desirable to perform secondary cleaning with a solvent.
即ち、本発明は、有機系材料にエキシマレーザ光を照射
して前記有機系材料を分解除去した後、含チッ素6員環
構造を有する溶剤で洗浄することを特徴とするエキシマ
レーザ加工方法である。That is, the present invention provides an excimer laser processing method, which comprises irradiating an organic material with excimer laser light to decompose and remove the organic material, and then cleaning with a solvent having a nitrogen-containing six-membered ring structure. be.
以下、本発明の実施例を比較例とともに説明する。Examples of the present invention will be described below along with comparative examples.
[実施例1]
第1図を参照する。同図は、イオン流記録ヘッドの概略
の平面図である。[Example 1] Refer to FIG. 1. This figure is a schematic plan view of the ion flow recording head.
図中の1は、厚さ50μmのポリイミドフィルム(商品
名カプトン、デュポン社製)基板1である。1 in the figure is a polyimide film substrate 1 (trade name: Kapton, manufactured by DuPont) with a thickness of 50 μm.
この基板1の表面には幅400μmの第1電極2が18
0本形成され、裏面にはこれらの第1電極と交差するよ
うに幅400μmの第2電極3か形成されている。なお
、第1電極の間隔、第2電極の間隔は夫々約100μm
である。前記第1電極、第2電極の表面には、厚さ1μ
mのNiメツキ膜(図示せず)か形成されている。前記
第1電極と第2電極の交差する部分には、穴径200μ
mの小孔4が開口されている。On the surface of this substrate 1, a first electrode 2 with a width of 400 μm is arranged 18
A second electrode 3 having a width of 400 μm is formed on the back surface so as to intersect with these first electrodes. Note that the interval between the first electrode and the interval between the second electrode is approximately 100 μm.
It is. The surfaces of the first and second electrodes have a thickness of 1 μm.
A Ni plating film (not shown) of m is formed. A hole with a diameter of 200μ is provided at the intersection of the first and second electrodes.
A small hole 4 of m is opened.
本実施例1では、ます上記構成の回路基板の小孔4にK
rFによる波長248nmのエキシマレーザ光を照射し
て、小孔4の部分のポリイミドを分解除去した。次いて
、前記第1電極・第2電極を溶剤例えばピリジン(後掲
する第1表)中に浸漬して超音波洗浄を30分間行った
。この後、約1000”cで加熱乾燥した。In the first embodiment, K is inserted into the small hole 4 of the circuit board having the above configuration.
The polyimide in the small holes 4 was decomposed and removed by irradiation with rF excimer laser light having a wavelength of 248 nm. Next, the first and second electrodes were immersed in a solvent such as pyridine (see Table 1 below) and subjected to ultrasonic cleaning for 30 minutes. Thereafter, it was dried by heating at about 1000''c.
しかして、上記のように溶剤処理した回路基板について
、テスターつまりデジタルマルチメータ(商品名J R
−6848、アトパンテスト社製、最大抵抗レンジ30
0MΩ)で第1電極間の抵抗、第1−第2電極間の抵抗
を測定した。ここで、第コ電極間の抵抗とは、第1電極
の偶数木目(2a、 2b・・・)と奇数本目(2c、
2d・・・)とを夫々−括して2グループとして、こ
れらグループ間の全体の抵抗を示す。また、第1−第2
電極間の抵抗とは、第1電極2a、 2b、 2c、
2d・=と、第2電極3a、 3b、 3c3d・・・
を夫々−括して2グループとして、これらグループ間の
抵抗を示す。各抵抗は、いずれも最大抵抗値300MΩ
以上の抵抗値であった。つまり、実施例1によれば、第
1電極間の抵抗、第1−第2電極の抵抗ともに、良好な
絶縁性であることが確認できた。また、上述の方法と同
様にして直流100Vを電極間に印加した場合、流れる
電流は]μAであり、電極間の絶縁性は完全に回復した
ことか確認された。また、上記溶媒による洗浄後もポリ
イミド基板の溶解や、電極の剥がれ等の問題は見受けら
れず、表面に薄く付着したカーボン層のみを除去するも
のであり、実用上非常に有効である。However, for circuit boards that have been treated with solvent as described above, a tester, that is, a digital multimeter (product name: JR
-6848, manufactured by Atopan Test, maximum resistance range 30
The resistance between the first electrode and the resistance between the first and second electrodes were measured at 0 MΩ). Here, the resistance between the co-electrodes means the even-numbered grains (2a, 2b...) and the odd-numbered grains (2c, 2c, etc.) of the first electrode.
2d...) are grouped into two groups, and the total resistance between these groups is shown. Also, the first-second
The resistance between the electrodes refers to the resistance between the first electrodes 2a, 2b, 2c,
2d.= and second electrodes 3a, 3b, 3c3d...
are grouped into two groups, and the resistance between these groups is shown. Each resistor has a maximum resistance value of 300MΩ
The resistance value was above. That is, according to Example 1, it was confirmed that both the resistance between the first electrodes and the resistance between the first and second electrodes had good insulation properties. Further, when 100 V DC was applied between the electrodes in the same manner as in the above method, the current flowing was ] μA, confirming that the insulation between the electrodes had been completely restored. Further, even after cleaning with the above solvent, problems such as dissolution of the polyimide substrate and peeling of the electrodes are not observed, and only the thin carbon layer attached to the surface is removed, which is very effective in practice.
ところで、上記溶剤による超音波洗浄後、無色透明な溶
媒は黄褐色に変色しており、また1度洗浄に使用した溶
媒を用いて電極の洗浄を行った場合、絶縁性が著しく低
下することから、上記溶媒は、ポリイミド基板表面にエ
キシマレーザ加工後、強固に付着したカーボンを溶解除
去したものと考えられる。By the way, after ultrasonic cleaning with the above solvent, the colorless and transparent solvent turns yellowish brown, and if the electrode is cleaned with the same solvent that was used once, the insulation properties will be significantly reduced. It is thought that the above solvent was used to dissolve and remove carbon firmly adhered to the surface of the polyimide substrate after excimer laser processing.
なお、上記溶媒(ピリジン)の代りに、後掲する第1表
に示すアニリン、ピユリン、ルチジン、トルイジン、シ
クロヘキンルアミン、ピペリジン、ユリジンを用いても
、第1電極間の抵抗、第1・第2電極間の抵抗について
上記実施例1と同様な試験を行ったところ、同様に良好
な絶縁性か得られた。つまり、いずれの場合も300M
Ω以上であった。Note that even if aniline, pyurine, lutidine, toluidine, cyclohexylamine, piperidine, or uridine shown in Table 1 below is used instead of the above solvent (pyridine), the resistance between the first electrode, the first When the same test as in Example 1 was conducted regarding the resistance between the two electrodes, similarly good insulation properties were obtained. In other words, in both cases 300M
It was more than Ω.
また、エタノール、ベンゼン等の他の溶媒(後掲する第
2表参照)を用いた場合の抵抗についても調べたところ
、後掲する第3表に示す通りである。同表により、)L
N−ジメチルホルムアイド及びキノリンを用いた場合の
第1・第2電極間の抵抗か300 MΩ以上を示すのみ
で、その他は良好な絶縁性を得られないことが確認でき
た。Furthermore, the resistance when using other solvents such as ethanol and benzene (see Table 2 below) was also investigated, and the results are as shown in Table 3 below. According to the same table, )L
It was confirmed that when N-dimethylformide and quinoline were used, the resistance between the first and second electrodes was only 300 MΩ or more, and good insulation was not obtained in other cases.
[実施例2″J
実施例1と1司様にして、前記第1電極・第2電極をピ
リジン中で洗浄した後、メタノール中で5分間超音波洗
浄(2次洗浄)を行ったところ、電極間の絶縁性も回復
し、かつ悪臭はほとんどなかった。[Example 2''J As in Examples 1 and 1, the first and second electrodes were washed in pyridine and then ultrasonically cleaned (secondary cleaning) in methanol for 5 minutes. The insulation between the electrodes was also restored, and there was almost no bad odor.
なお、2次洗浄溶剤としては、上記メタノールの他、水
、炭化水素、ハロゲン化炭化水素、アルコール、エーテ
ル、ケトン、エステル等のように、使用した含チッ素6
員環溶剤と混合可能なものであればよい。In addition to the above-mentioned methanol, secondary cleaning solvents include water, hydrocarbons, halogenated hydrocarbons, alcohols, ethers, ketones, esters, etc.
Any material may be used as long as it is miscible with the ring member solvent.
E実施例3つ
実施例ユで使用したポリイミド回路基板に代えて、厚さ
75μmのポリイミドフィルム(商品名ユービレックス
、宇部興産■製)に厚さ18μmの銅箔からなる第1・
第2電極をアクリル系接着剤で両面に貼合わせたポリイ
ミド回路基板を用いた。E Example 3 Instead of the polyimide circuit board used in Example I, a first circuit board made of 18 μm thick copper foil was placed on a 75 μm thick polyimide film (trade name Ubilex, manufactured by Ube Industries, Ltd.).
A polyimide circuit board with second electrodes bonded to both sides with an acrylic adhesive was used.
実施例ユと同様、溶剤で洗浄した後、実施例2のように
2次洗浄を行ったが、同様に絶縁性か回復し、悪臭もな
かった。Similar to Example Y, after cleaning with a solvent, secondary cleaning was performed as in Example 2, but the insulation was similarly restored and there was no bad odor.
なお、実施例コ〜3では、電気回路パターンでのみにつ
いて!及したが、これは電気抵抗によりカーボン除去の
判定か容易に行えるためてあり、電気回路パターン材料
に限定するものではない。In addition, in Example 3, only electric circuit patterns are used! However, this is because carbon removal can be easily determined based on electrical resistance, and is not limited to electrical circuit pattern materials.
つまり、エキシマレーザ加工か使用されるマーキング材
料、半導体材料等で、カーボン状の分解物が発生するも
のであれば、適用する事が可能である。In other words, it can be applied to marking materials, semiconductor materials, etc. used in excimer laser processing, as long as carbon-like decomposition products are generated.
[比較例ユ
実施例1と同様に、KrFによる波長248nfilの
エキシマレーザ光を照射して、小孔4の部分のポリイミ
ドを分解除去し、貫通孔を形成した。この際、黒色分解
物が第1・第2電極周囲に付着した。[Comparative Example] As in Example 1, KrF excimer laser light having a wavelength of 248 nfil was irradiated to decompose and remove the polyimide in the small hole 4 portion, thereby forming a through hole. At this time, black decomposition products adhered around the first and second electrodes.
この付着物は、メタノールを用いたふき取り、超音波洗
浄で外観上は完全に除去できた。This deposit was apparently completely removed by wiping with methanol and ultrasonic cleaning.
しかし、テスターつまりデジタルマルチメータ(商品名
J R−6848、アトバンプスト社製、最大抵抗レン
ジ300MΩ)で第1電極と第2電極間、隣接する第1
電極、第2電極の抵抗を測定したところ、数にΩ〜10
0にΩへと抵抗が低下しており、絶縁性が失われていた
。However, with a tester, that is, a digital multimeter (product name JR-6848, manufactured by Attobanpsto, maximum resistance range 300MΩ), the
When the resistance of the electrode and the second electrode was measured, it was found that the resistance was in the range of Ω to 10
The resistance had decreased from 0 to Ω, and the insulation had been lost.
ピリジン 第1表 アニリン ピユリン アミン ピペリジン コリジン 第2表 第3表 エタノール ベンゼン トルエン (C,目、)3N トリエチルアミン C口、cooc20も 酢酸エチル アミド 千ノリン 但し、 第1表中の*は300 MΩ以上の値を示す。pyridine Table 1 Aniline Piyurin amine piperidine Collijin Table 2 Table 3 ethanol benzene toluene (C, eyes,)3N triethylamine C mouth, cooc20 too Ethyl acetate Amide Chinorin however, * in Table 1 is 300 Indicates a value of MΩ or more.
C発明の効果]
以上詳述した如く本発明によれば、有機系材料にエキシ
マレーザを照射して該有機系材料を分解除去した後、含
チッ素6員環溶剤で洗浄することにより、有機系材料に
付着したカーボンの分解生成分を完全に除去しえるエキ
シマレーザ加工方法を提供できる。C Effects of the Invention] As detailed above, according to the present invention, the organic material is decomposed and removed by irradiating the organic material with an excimer laser, and then the organic material is washed with a nitrogen-containing six-membered ring solvent. It is possible to provide an excimer laser processing method that can completely remove carbon decomposition products adhering to system materials.
第1図はイオン流記録ヘッドの概略の平面図である。
1・・・ポリイミドフィルム基板、2・・・第1電極、
3・・・第2電極、4・・・小孔。FIG. 1 is a schematic plan view of the ion flow recording head. 1... Polyimide film substrate, 2... First electrode,
3... Second electrode, 4... Small hole.
Claims (4)
機系材料を分解除去した後、含チッ素6員環構造を有す
る溶剤で洗浄することを特徴とするエキシマレーザ加工
方法。(1) An excimer laser processing method, which comprises irradiating an organic material with excimer laser light to decompose and remove the organic material, followed by cleaning with a solvent having a nitrogen-containing six-membered ring structure.
環骨格構造中に窒素原子を含む化合物である請求項1記
載のエキシマレーザ加工方法。(2) The excimer laser processing method according to claim 1, wherein the solvent having a nitrogen-containing six-membered ring structure is a compound containing a nitrogen atom in the six-membered ring skeleton structure.
骨格構造中の炭素原子と直接窒素原子が結合した化合物
である請求項1記載のエキシマレーザ加工方法。(3) The excimer laser processing method according to claim 1, wherein the solvent having a nitrogen-containing six-membered ring structure is a compound in which a nitrogen atom is directly bonded to a carbon atom in the six-membered ring skeleton structure.
た後、この溶剤よりも低沸点でかつ該溶剤と混合可能な
他の溶剤で2次洗浄される請求項1記載のエキシマレー
ザ加工方法。(4) The excimer laser according to claim 1, wherein after being washed with the solvent having a nitrogen-containing six-membered ring structure, the excimer laser is washed with another solvent having a lower boiling point than this solvent and which is miscible with the solvent. Processing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054860A JPH03258475A (en) | 1990-03-08 | 1990-03-08 | Excimer laser beam machining method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054860A JPH03258475A (en) | 1990-03-08 | 1990-03-08 | Excimer laser beam machining method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03258475A true JPH03258475A (en) | 1991-11-18 |
Family
ID=12982344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2054860A Pending JPH03258475A (en) | 1990-03-08 | 1990-03-08 | Excimer laser beam machining method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03258475A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05185269A (en) * | 1992-01-17 | 1993-07-27 | Fujitsu Ltd | Laser abrasion processing method |
JPH08309566A (en) * | 1995-05-19 | 1996-11-26 | Nec Corp | Via hole forming method and laser beam irradiating equipment |
-
1990
- 1990-03-08 JP JP2054860A patent/JPH03258475A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05185269A (en) * | 1992-01-17 | 1993-07-27 | Fujitsu Ltd | Laser abrasion processing method |
JPH08309566A (en) * | 1995-05-19 | 1996-11-26 | Nec Corp | Via hole forming method and laser beam irradiating equipment |
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