JPH0213753U - - Google Patents
Info
- Publication number
- JPH0213753U JPH0213753U JP9174588U JP9174588U JPH0213753U JP H0213753 U JPH0213753 U JP H0213753U JP 9174588 U JP9174588 U JP 9174588U JP 9174588 U JP9174588 U JP 9174588U JP H0213753 U JPH0213753 U JP H0213753U
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- substrate
- gauge
- walled
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の１実施例を示す構成図、第２
図本考案の第２の実施例の構成を示す縦断面図、
第３図は本考案の第３の実施例の構成を示す構成
図、第４図は従来の半導体圧力変換器の構成を示
す縦断面図である。
１０，２３，３７，４０……基板、１１，２４
……凹部、１２，２５，４５……ダイアフラム、
１３，２６，３８，４１……固定部、１４，３０
……ゲージ、３４，４４……信号処理回路、２０
，２８……台座、２１，２７……貫通孔、２２，
２９……接合材、３３，４２……延長部、３９…
…凸部、４３……切り込み。
Figure 1 is a configuration diagram showing one embodiment of the present invention;
Figure: A vertical sectional view showing the configuration of the second embodiment of the present invention;
FIG. 3 is a block diagram showing the structure of a third embodiment of the present invention, and FIG. 4 is a longitudinal sectional view showing the structure of a conventional semiconductor pressure transducer. 10, 23, 37, 40...Substrate, 11, 24
... recess, 12, 25, 45 ... diaphragm,
13, 26, 38, 41... fixed part, 14, 30
... Gauge, 34, 44 ... Signal processing circuit, 20
, 28...Pedestal, 21, 27...Through hole, 22,
29... Bonding material, 33, 42... Extension part, 39...
...Protrusion, 43...notch.
Claims (1)
薄肉のダイアフラムの上にこのダイアフラムに印
加される測定圧力によつて抵抗が変化するゲージ
を形成し、このダイアフラムの周囲の厚肉の固定
部から延長して形成された前記基板の延長部に前
記ゲージで検出された抵抗変化を処理する信号処
理部を半導体技術により前記基板と一体に形成し
、前記厚肉部を台座に接合したことを特徴とする
半導体圧力変換器。 A gauge whose resistance changes depending on the measuring pressure applied to this diaphragm is formed on a thin-walled diaphragm obtained by etching a silicon single crystal substrate, and is extended from a thick-walled fixed part around this diaphragm. A signal processing section for processing a resistance change detected by the gauge is formed integrally with the substrate using semiconductor technology on an extension of the substrate, and the thick portion is joined to the pedestal. Semiconductor pressure transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9174588U JPH0213753U (en) | 1988-07-11 | 1988-07-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9174588U JPH0213753U (en) | 1988-07-11 | 1988-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0213753U true JPH0213753U (en) | 1990-01-29 |
Family
ID=31316211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9174588U Pending JPH0213753U (en) | 1988-07-11 | 1988-07-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0213753U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003302298A (en) * | 2002-04-10 | 2003-10-24 | Denso Corp | Mechanical quantity detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5446083A (en) * | 1977-09-19 | 1979-04-11 | Toshiba Corp | Pressure transducer |
| JPS5972775A (en) * | 1982-10-20 | 1984-04-24 | Hitachi Ltd | Silicon strain gage type pressure sensitive device and manufacture thereof |
| JPS6011049B2 (en) * | 1971-11-13 | 1985-03-22 | バイエル・アクチエンゲゼルシヤフト | Polymerization method of conjugated diolefin |
| JPS6252952B2 (en) * | 1979-09-07 | 1987-11-07 | Ei Teii Ando Teii Tekunorojiizu Inc |
-
1988
- 1988-07-11 JP JP9174588U patent/JPH0213753U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6011049B2 (en) * | 1971-11-13 | 1985-03-22 | バイエル・アクチエンゲゼルシヤフト | Polymerization method of conjugated diolefin |
| JPS5446083A (en) * | 1977-09-19 | 1979-04-11 | Toshiba Corp | Pressure transducer |
| JPS6252952B2 (en) * | 1979-09-07 | 1987-11-07 | Ei Teii Ando Teii Tekunorojiizu Inc | |
| JPS5972775A (en) * | 1982-10-20 | 1984-04-24 | Hitachi Ltd | Silicon strain gage type pressure sensitive device and manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003302298A (en) * | 2002-04-10 | 2003-10-24 | Denso Corp | Mechanical quantity detector |