JPH01255630A - Production of cutting tool made of diamond-coated tungsten carbide-based sintered hard alloy - Google Patents
Production of cutting tool made of diamond-coated tungsten carbide-based sintered hard alloyInfo
- Publication number
- JPH01255630A JPH01255630A JP8282988A JP8282988A JPH01255630A JP H01255630 A JPH01255630 A JP H01255630A JP 8282988 A JP8282988 A JP 8282988A JP 8282988 A JP8282988 A JP 8282988A JP H01255630 A JPH01255630 A JP H01255630A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- tungsten carbide
- substrate
- sintered
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 title claims description 7
- 229910045601 alloy Inorganic materials 0.000 title abstract description 6
- 239000000956 alloy Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 19
- 239000011247 coating layer Substances 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000001513 hot isostatic pressing Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 238000001308 synthesis method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000012071 phase Substances 0.000 abstract description 4
- 230000002706 hydrostatic effect Effects 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、人工ダイヤモンド被覆層の析出形成速度が
速く、かつこれの密着性も良好なダイヤモンド被覆炭化
タングステン（以下ＷＣで示す）基超硬合金製切削工具
の製造法に関するものである。Detailed Description of the Invention [Industrial Field of Application] The present invention is directed to a diamond-coated tungsten carbide (hereinafter referred to as WC)-based cemented carbide which has a fast precipitation formation rate and good adhesion of the artificial diamond coating layer. This invention relates to a method of manufacturing an alloy cutting tool.
近年、Ａ［合金やＣｕ合金、さらに非金属などの切削に
すぐれた切削性能を発揮する切削工具として、ダイヤモ
ンド被ｍＷＣ基超硬合金製切削工具が提案されている。In recent years, diamond-coated mWC-based cemented carbide cutting tools have been proposed as cutting tools that exhibit excellent cutting performance for cutting A[alloys, Cu alloys, and nonmetals.
このダイヤモンド被覆ＷＣ基超硬合金製切削工具は、例
えば特開昭８３−４５３７２号公報に記載されるように
、
原料粉末として、ＷＣ粉末、Ｃｏ粉末、および炭素粉末
を用い、これら原料粉末を所定の配合組成に配合し、通
常の条件で、混合し、圧粉体にプレス成形した後、この
圧粉体を、
真空中、１４００−１５００℃の温度で焼結して、Ｃｏ
ａｌ〜４％、
微細均一に分散する遊離炭素：ｌ５Ｏ
（Ｉｎｔｅｒｎａｔｉｏｎａｌ ５ｔａｎｄａｒｌｚａ
ｔｌｏｎ Ｏｒｇａｎｉｚａｉｌｏｎ）規格でＣＯＩ〜
ＣＯ８に相当する微量、を含有し、残りがＷＣと不可避
不純物からなる組成（以上重量％、以下％は重量９６を
示す）を有するＷＣＣ超超硬合金基体を製造し、
ついで、基体の表面に、ＣＨ４などのガスの熱分解によ
る化学蒸着法（ＣＶＤ法）や、カーボンイオンを基体に
衝突させる物理蒸着法（ＰＶＤ法）などの低圧気相合成
法により人工ダイヤモンド被覆層を形成することにより
製造されている。This diamond-coated WC-based cemented carbide cutting tool uses WC powder, Co powder, and carbon powder as raw material powders, and these raw material powders are mixed in a predetermined manner, as described in, for example, Japanese Patent Application Laid-Open No. 83-45372. Co
al ~ 4%, finely and uniformly dispersed free carbon: 15O (International 5tandarlza
COI based on the tlon Organizailon) standard
A WCC cemented carbide substrate is manufactured which has a composition (the above weight %, the following % indicates weight 96) containing a trace amount corresponding to CO8, and the remainder consisting of WC and unavoidable impurities, and then applied to the surface of the substrate. Manufactured by forming an artificial diamond coating layer using low-pressure vapor phase synthesis methods such as chemical vapor deposition method (CVD method) using thermal decomposition of gases such as CH4, and physical vapor deposition method (PVD method) that bombards the substrate with carbon ions. has been done.
しかし、上記の従来ダイヤモンド被覆ＷＣ基超硬合金製
切削工具の製造法においては、人工ダイヤモンド被覆層
の形成に比較的長時間を必要とするものであり、より速
い析出形成速度での人工ダイヤモンド被覆層の形成が望
まれている。However, in the conventional method for manufacturing diamond-coated WC-based cemented carbide cutting tools described above, it takes a relatively long time to form the artificial diamond coating layer, and the artificial diamond coating layer can be formed at a faster precipitation rate. Formation of layers is desired.
そこで、本発明者等は、上述のような観点から、より速
い析出形成速度での人工ダイヤモンド被覆層の形成を可
能とすべく研究を行なった結果、ＷＣＣ超超硬合金基体
結合相を構成するＣｏ含有量を１％未満と少なくし、か
つこれを均一に分布させると、ダイヤモンドの析出形成
速度が一段と速くなり、一方Ｃｏ含有量の低減によって
前記基体の強度は著しく低下するようになるが、ＷＣＣ
超超硬合金基体製造に際して、その焼結を、（ａ）
まず、圧粉体に、真空中、１４００〜１５００℃の温度
で１次焼結を施し、
（ｂ） ついで、この１次焼結材に、温度： １３０
０〜１５００℃、圧力：１００〜１０００気圧の条件で
熱間静水圧プレス（ＨＩ Ｐ）を施し、
（ｃ） さらに、このＨＩＰ材に、真空中、１４００
〜１５００℃の温度で２次焼結を施す、
以上（ａ）〜（Ｃ）の３段階によって行なうと、９５〜
９８％の理論密度比であった１次焼結材が上記（ｂ）段
階のＨＩＰ処理でポアが消滅して、９９％以上の理論密
度比をもつようになり、また１次焼結し、ＨＩＰ処理し
た後でもＣｏが凝集している、すなわち多くのＣｏブー
ルが見られるが、上記（Ｃ）段階によってＣＯが均一に
分布するようになり、このような状態のＷＣＣ超超硬合
金基体、１〜４％の高含有Ｃｏの場合と同等の強度をも
つようになるほか、相対的に低含有のＣＯが均一に分布
した組織によってダイヤモンドの析出形成が著しく促進
されるようになり、さらに上記の通り微量の遊離炭素を
微細均一に分散含有させておくことによって人工ダイヤ
モンドの密着性が一段と向上するようになるという知見
を得たのである。Therefore, from the above-mentioned viewpoint, the present inventors conducted research to enable the formation of an artificial diamond coating layer at a faster precipitation formation rate. When the Co content is reduced to less than 1% and distributed uniformly, the rate of diamond precipitate formation becomes even faster, while the strength of the substrate decreases significantly due to the reduction of the Co content. W.C.C.
When manufacturing the cemented carbide substrate, the sintering is performed by (a)
First, a green compact is subjected to primary sintering in a vacuum at a temperature of 1400 to 1500°C, (b) This primary sintered material is then subjected to a temperature of 130°C.
Hot isostatic pressing (HIP) was applied under the conditions of 0 to 1500°C and pressure: 100 to 1000 atm.
If secondary sintering is performed at a temperature of ~1500°C, through the three steps (a) to (C) above, 95~
The pores of the primary sintered material, which had a theoretical density ratio of 98%, disappeared through the HIP treatment in step (b), and the material now had a theoretical density ratio of 99% or more, and the material was primary sintered again. Even after the HIP treatment, Co aggregates, that is, many Co boules are seen, but the above step (C) allows CO to be uniformly distributed, and the WCC cemented carbide substrate in this state, In addition to having a strength equivalent to that with a high Co content of 1 to 4%, the formation of diamond precipitates is significantly promoted due to the uniform distribution of relatively low CO content, and furthermore, the above-mentioned As shown in the figure, they discovered that the adhesion of artificial diamonds can be further improved by finely and uniformly dispersing minute amounts of free carbon.
したがって、この発明は、上記知見にもとづいてなされ
たものであって、
原料粉末として、ＷＣ粉末、Ｃｏ粉末、および炭素粉末
を用い、これら原料粉末を所定の配合組成に配合し、通
常の条件で、混合し、圧粉体に成形した後、
（ａ） この圧粉体に、真空中、１４００〜１５００
℃の温度で１次焼結を施し、
（ｂ） ついで、この１次焼結材に、温度： １３０
０〜１５００℃、圧力＝１００〜１０００気圧の条件で
熱間静水圧プレスを施してポアの消滅をはかり、（Ｃ）
さらに、この熱間静水圧プレス材に、真空中、温度
： １４００〜１５００℃の温度で２次焼結を施してＣ
Ｏ相の均一分布をはかる、
以上（ａ）〜（Ｃ）の３段階焼結を施して、Ｃｏ 二〇
、１〜１重量％未満、
微細均一に分散する遊離炭素：ＩＳＯ規格でＣＯＩ〜Ｃ
Ｏ８に相当する微量、
を含有し、残りがＷＣと不可避不純物からなる組成を有
し、かつ９９９６以上の理論密度比を６するＷＣＣ超超
硬合金基体を製造し、
このＷＣＣ超超硬合金基体表面に、低圧気相合成法によ
り人工ダイヤモンド被覆層を形成することからなるダイ
ヤモンド被覆ＷＣ基超硬合金製切削工具の製造法に特徴
を有するものである。Therefore, this invention has been made based on the above knowledge, and uses WC powder, Co powder, and carbon powder as raw material powders, blends these raw material powders into a predetermined composition, and under normal conditions. , mixed and formed into a green compact, (a) This green compact is heated to 1400 to 1500 in vacuum.
(b) This primary sintered material is then subjected to primary sintering at a temperature of 130 °C.
Hot isostatic pressing was performed under the conditions of 0 to 1500°C and pressure = 100 to 1000 atm to eliminate the pores, (C)
Furthermore, this hot isostatically pressed material is subjected to secondary sintering in vacuum at a temperature of 1400 to 1500°C to give carbon
Aiming for uniform distribution of O phase, performing the three-step sintering of (a) to (C) above to produce Co20, 1 to less than 1% by weight, and finely uniformly dispersed free carbon: COI to C according to ISO standards.
Producing a WCC cemented carbide substrate having a composition containing a trace amount corresponding to O8, with the remainder consisting of WC and unavoidable impurities, and having a theoretical density ratio of 9996 or more, the WCC cemented carbide substrate The present invention is characterized by a method for manufacturing a diamond-coated WC-based cemented carbide cutting tool, which comprises forming an artificial diamond coating layer on the surface by a low-pressure vapor phase synthesis method.
つぎに、この発明の方法において、製造条件を上記の通
りに限定した理由を説明する。Next, the reason why the manufacturing conditions are limited as described above in the method of this invention will be explained.
（ａ）１次焼結温度
その温度が１４００℃未満では焼結が不十分で、ポアや
Ｃｏ相プールが多く存在するようになり、この結果後工
程のＨＩＰ処理でポアを消滅させる効果が十分に発揮さ
れず、一方その温度が１５００℃を越えると、ＷＣ粒の
粗大化およびＣｏの蒸発飛散が起るようになり、所望の
強度を確保することができないことから、その温度を１
４００〜１５００℃と定めた。(a) Primary sintering temperature If the temperature is lower than 1400°C, sintering will be insufficient and many pores and Co phase pools will exist, resulting in the HIP treatment in the post-process being effective in eliminating pores. On the other hand, if the temperature exceeds 1500°C, the WC grains become coarser and the Co evaporates and scatters, making it impossible to secure the desired strength.
The temperature was set at 400-1500°C.
（ｂ）ＨＩＰ条件
その温度が１３００℃未満でも、その圧力が１００気圧
未満でもポアの消滅を十分に行なうことができず、した
がって９９％以上の理論密度比をもった基体を製造する
ことができず、一方その温度が１５００℃を越えると、
ＷＣ粒が粗大化するようになって強度が低下し、またそ
の圧力が１０００気圧を越えると、かえってガスのまき
込みが生じ、ポア発生の原因となることから、それぞれ
温度＝１３００〜１５００℃、圧力：１００〜１０００
気圧とそれぞれ定めた。(b) HIP conditions Even if the temperature is less than 1300°C or the pressure is less than 100 atm, pores cannot be sufficiently eliminated, and therefore a substrate with a theoretical density ratio of 99% or more cannot be manufactured. On the other hand, if the temperature exceeds 1500℃,
The WC grains become coarser and the strength decreases, and if the pressure exceeds 1000 atm, gas will be drawn in and cause pores. Pressure: 100-1000
The atmospheric pressure was determined respectively.
（ｃ）２次焼結温度
その温度が１４００℃未満では、Ｃｏ相ブールの均一分
布が困難であり、一方その温度が１５００℃を越えると
、同様にＷＣ粒の粗大化並びにＣｏの蒸発飛散が発生す
るようになって強度低下をまねくことからその温度を１
４００〜１５００℃と定めた。(c) Secondary sintering temperature If the temperature is less than 1400°C, it is difficult to uniformly distribute the Co phase boule, while if the temperature exceeds 1500°C, the WC grains will become coarser and the Co will evaporate and scatter. The temperature should be lowered to 1.
The temperature was set at 400-1500°C.
（ｄ） Ｃｏ含有量
Ｃｏ含有量が０．１％未満では、所望の強度を確保する
ことができないばかりでなく、靭性も低く、切削時に切
刃に欠損が発生し易く、一方Ｃｏ 含（−ｊ量が１％以
上になると、ダイヤモンドの析出形成速度が急激に低下
するようになることから、その含有量を０．１〜１％未
満を定めた。(d) Co content If the Co content is less than 0.1%, it is not only impossible to secure the desired strength, but also the toughness is low, and the cutting edge is easily damaged during cutting. When the amount of j becomes 1% or more, the rate of diamond precipitation formation decreases rapidly, so the content was determined to be 0.1 to less than 1%.
（ｃ） 遊離炭素含有量
遊離炭素には、基体表面に析出したダイヤモンドの黒鉛
化を阻止すると共に、これの基体への密着性を一段と向
上させる作用があるが、その含有割合がＩＳＯ規格でＣ
０１未満では前記作用に所望の効果が得られず、一方そ
の含有割合が同ＣＯ８を越えると、基体の強度が低下す
るようになることから、その含有割合をＩＳＯ規格でＣ
０１〜Ｃ０８に相当する微量とした。(c) Free carbon content Free carbon has the effect of preventing the graphitization of diamond deposited on the surface of the substrate and further improving its adhesion to the substrate, but its content is C
If the content is less than 01, the desired effect cannot be obtained, while if the content exceeds CO8, the strength of the substrate will decrease.
The amount was set to be a trace amount corresponding to 01 to C08.
（「）理論密度比
この発明のＷＣＣ超超硬合金基体、Ｃｏ含有量が１％未
満と低いので、ＨＩＰ処理では基体が９９％以上の理論
密度比をもつようにして、Ｃｏ：１〜４％を含有し、か
つ９５〜９８％程度の理論密度比を有する従来ＷＣＣ超
超硬合金基体同等の強度をもつようにする必要があり、
したがって９９９６未満の理論密度比では所定の強度を
確保することができないものである。(') Theoretical density ratio Since the Co content of the WCC cemented carbide substrate of this invention is low at less than 1%, the substrate is made to have a theoretical density ratio of 99% or more in the HIP treatment, Co: 1 to 4. % and has a theoretical density ratio of about 95 to 98%.
Therefore, with a theoretical density ratio of less than 9996, it is not possible to secure a predetermined strength.
つぎに、この発明の方法を実施例により具体的に説明す
る。Next, the method of the present invention will be specifically explained using examples.
原料粉末として、いずれも１〜３．２μｓの範囲内の所
定の平均粒径を有するＷＣ粉末、ＣｏメツキＷＣ粉末、
およびＣｏ粉末、さらに微細なカーボンブラックを用意
し、これら原料粉末を所定の配合組成に配合し、ボール
ミルにて７２時時間式混合し、乾燥した後、１．５ｔｏ
ｎ／ｃ−の圧力で圧粉体にプレス成形し、ついで、この
圧粉体をそれぞれ第１表に示される条件で焼結して、同
じく第１表に示される組成、抗折力（強度評価）、およ
び理論密度比を有するＷＣＣ超超硬合金基体を製造し、
この基体を、研磨してＣＩＳ （超硬工具協会）規格５
ＰＰ４２２のスローアウェイチップ形状とした状態で、
これの表面に、ＣＶＤ法の１種である熱電子放射法を用
い、
反 応 容 器：直径１２０ｍｍの石英管、使用フィラ
メント：金属タングステン、フィラメント温度： ２０
００℃、
基 体 温 度＝７００ ℃、
雰 囲 気： １０ｔｏｒｒのＣＨ４＋Ｈ２、
反応ガス割合： ＣＨ４／Ｈ２−０，００５、反 応
時 間＝１２時間、
の条件でダイヤモンド被覆を行ない、同じく第１表に示
される平均層厚のダイヤモンド被覆層を形成することに
よって本発明法１〜ｌＯおよび従来法１〜４をそれぞれ
実施し、ダイヤモンド被覆ＷＣ基超硬合金製切削工具（
以下、被覆切削工具という）を製造した。As the raw material powder, WC powder, Co-plated WC powder, each having a predetermined average particle size within the range of 1 to 3.2 μs,
, Co powder, and finer carbon black are prepared, these raw material powders are blended into a predetermined composition, mixed for 72 hours in a ball mill, dried, and then 1.5 to
It is press-formed into a green compact at a pressure of n/c-, and then the green compact is sintered under the conditions shown in Table 1. evaluation), and manufacturing a WCC cemented carbide substrate having a theoretical density ratio,
This base was polished to meet CIS (Cemented Carbide Tools Association) standard 5.
With the shape of a PP422 indexable tip,
Thermionic radiation method, which is a type of CVD method, was applied to the surface of this, using a reaction vessel: a quartz tube with a diameter of 120 mm, a filament used: metallic tungsten, and a filament temperature: 20 mm.
00℃, substrate temperature = 700℃, atmosphere: 10torr CH4+H2,
The method of the present invention was performed by performing diamond coating under the following conditions: reaction gas ratio: CH4/H2-0,005, reaction time = 12 hours, and forming a diamond coating layer with the average layer thickness shown in Table 1. 1 to 1O and conventional methods 1 to 4 were carried out, respectively, and diamond-coated WC-based cemented carbide cutting tools (
A coated cutting tool (hereinafter referred to as a coated cutting tool) was manufactured.
ついで、この結果得ら、れた各種の被覆切削工具につい
て、
被削材：ＡΩ−１８％Ｓ１合金の丸棒、切削速度： １
００ ｍ／ｍｉｎ 。Next, regarding the various coated cutting tools obtained as a result, Work material: AΩ-18% S1 alloy round bar, Cutting speed: 1
00 m/min.
送 リ： ０．１５關／刃、
切込み＝１關、
の条件で旋削切削試験を行ない、切刃の逃げ面摩耗幅が
０．３ｍｍに至るまでの切削時間を測定した。A lathe cutting test was conducted under the following conditions: feed rate: 0.15 mm/tooth, depth of cut = 1 mm, and the cutting time until the flank wear width of the cutting edge reached 0.3 mm was measured.
この結果を第１表に示した。The results are shown in Table 1.
第１表に示される結果から、本発明法１〜１０により製
造された被覆切削工具は、基体のＣｏ含有量が低いにも
かかわらず、従来法１〜４で製造された被覆切削工具に
おける高Ｃｏ含有の基体とほぼ同等の強度を示し、かつ
本発明法１〜ｌＯにおいては、同一の人工ダイヤモンド
被覆層形成条件にもかかわらず、従来法１〜４における
場合よりも一段と速い析出形成速度での人工ダイヤモン
ド被覆層の形成が可能であり、この当然の結果として切
削試験では相対的に長い切削時間を示すことが明らかで
ある。From the results shown in Table 1, it can be seen that the coated cutting tools manufactured by the methods 1 to 10 of the present invention have a higher Co content than the coated cutting tools manufactured by the conventional methods 1 to 4, although the Co content in the substrate is low. It exhibits almost the same strength as the Co-containing substrate, and in Methods 1 to 1 of the present invention, the precipitate formation rate is much faster than in Conventional Methods 1 to 4 despite the same artificial diamond coating layer formation conditions. It is clear that it is possible to form an artificial diamond coating layer of 300 mL, and that a corollary of this is that the cutting tests show relatively long cutting times.
上述のように、この発明の方法によれば、人工ダイヤモ
ンド被覆層の析出形成が速（、かつこれの密着性も良好
なダイヤモンド被覆ＷＣ基超硬合金製切削工具を製造す
ることができるのである。As described above, according to the method of the present invention, it is possible to manufacture a diamond-coated WC-based cemented carbide cutting tool in which the artificial diamond coating layer is rapidly formed (and has good adhesion). .
Claims (1)
末、および炭素粉末を用い、これら原料粉末を所定の配
合組成に配合し、通常の条件で、混合し、圧粉体に成形
した後、 （ａ）この圧粉体に、真空中、１４００〜１５００℃の
温度で１次焼結を施し、 （ｂ）ついで、この１次焼結材に、温度：１３００〜１
５００℃、圧力：１００〜１０００気圧の条件で熱間静
水圧プレスを施してポアの消滅をはかり、 （ｃ）さらに、この熱間静水圧プレス材に、真空中、温
度：１４００〜１５００℃の温度で２次焼結を施してＣ
ｏ相の均一分布をはかる、 以上（ａ）〜（ｃ）の３段階焼結を施して、Ｃｏ：０．
１〜１重量％未満、 微細均一に分散する遊離炭素：ＩＳＯ規格でＣ０１〜Ｃ
０８に相当する微量、 を含有し、残りが炭化タングステンと不可避不純物から
なる組成を有し、かつ９９％以上の理論密度比を有する
炭化タングステン基超硬合金の基体を製造し、 この炭化タングステン基超硬合金基体の表面に、低圧気
相合成法により人工ダイヤモンド被覆層を形成すること
を特徴とするダイヤモンド被覆炭化タングステン基超硬
合金製切削工具の製造法。(1) Tungsten carbide powder, Co powder, and carbon powder are used as raw material powders. These raw material powders are blended into a predetermined composition, mixed under normal conditions, and formed into a green compact. (a ) This green compact is subjected to primary sintering at a temperature of 1400 to 1500°C in vacuum, (b) This primary sintered material is then subjected to primary sintering at a temperature of 1300 to 1500°C.
Hot isostatic pressing was performed at 500°C and a pressure of 100 to 1000 atm to eliminate pores. Perform secondary sintering at temperature C
Co:0.
1 to less than 1% by weight, finely and uniformly dispersed free carbon: C01 to C according to ISO standards
A substrate of a tungsten carbide-based cemented carbide having a composition of tungsten carbide and unavoidable impurities and a theoretical density ratio of 99% or more is manufactured, and the tungsten carbide-based A method for manufacturing a diamond-coated tungsten carbide-based cemented carbide cutting tool, which comprises forming an artificial diamond coating layer on the surface of a cemented carbide base by a low-pressure vapor phase synthesis method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8282988A JPH01255630A (en) | 1988-04-04 | 1988-04-04 | Production of cutting tool made of diamond-coated tungsten carbide-based sintered hard alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8282988A JPH01255630A (en) | 1988-04-04 | 1988-04-04 | Production of cutting tool made of diamond-coated tungsten carbide-based sintered hard alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01255630A true JPH01255630A (en) | 1989-10-12 |
Family
ID=13785287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8282988A Pending JPH01255630A (en) | 1988-04-04 | 1988-04-04 | Production of cutting tool made of diamond-coated tungsten carbide-based sintered hard alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255630A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000454A1 (en) * | 1991-06-24 | 1993-01-07 | Idemitsu Petrochemical Company Limited | Diamond-covered member and production thereof |
| US5585176A (en) * | 1993-11-30 | 1996-12-17 | Kennametal Inc. | Diamond coated tools and wear parts |
| US5716170A (en) * | 1996-05-15 | 1998-02-10 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
-
1988
- 1988-04-04 JP JP8282988A patent/JPH01255630A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000454A1 (en) * | 1991-06-24 | 1993-01-07 | Idemitsu Petrochemical Company Limited | Diamond-covered member and production thereof |
| US5585176A (en) * | 1993-11-30 | 1996-12-17 | Kennametal Inc. | Diamond coated tools and wear parts |
| US5648119A (en) * | 1993-11-30 | 1997-07-15 | Kennametal Inc. | Process for making diamond coated tools and wear parts |
| US6287682B1 (en) | 1993-11-30 | 2001-09-11 | Kennametal Pc Inc. | Diamond coated tools and process for making |
| US5716170A (en) * | 1996-05-15 | 1998-02-10 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
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