JPH07307284A - Scanning exposure device - Google Patents
Scanning exposure deviceInfo
- Publication number
- JPH07307284A JPH07307284A JP6125691A JP12569194A JPH07307284A JP H07307284 A JPH07307284 A JP H07307284A JP 6125691 A JP6125691 A JP 6125691A JP 12569194 A JP12569194 A JP 12569194A JP H07307284 A JPH07307284 A JP H07307284A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- photosensitive substrate
- scanning
- projection optical
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は走査型露光装置に関し、
例えば液晶表示デバイスの製造に用いる露光装置に適用
して好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning type exposure apparatus,
For example, it is suitable for application to an exposure apparatus used for manufacturing a liquid crystal display device.
【０００２】[0002]
【従来の技術】今日、微細加工技術の発達に伴いこの種
の露光装置の制御も複雑になりつつある。その制御技術
の一つとして、感光基板を適切な位置に駆動させること
により投影光学系の焦点位置や感光基板に生じた凹凸等
の誤差を補正するレベリング技術が知られている。2. Description of the Related Art Today, with the development of fine processing technology, the control of this type of exposure apparatus is becoming complicated. As one of the control techniques, there is known a leveling technique that corrects an error such as a focus position of a projection optical system or unevenness generated on the photosensitive substrate by driving the photosensitive substrate to an appropriate position.
【０００３】[0003]
【発明が解決しようとする課題】ところで投影光学系１
の焦点距離は、図７に示すように、入射側の焦点距離ｄ
１についても出射側の焦点距離ｄ２についても一定であ
る。従つてマスク２上に形成されているパターンを正確
に転写するためには、走査露光中におけるマスク２と感
光基板３との間隔を適当な間隔で一定に維持しなければ
ならない。しかしマスク面２Ａ及び感光基板面３Ａとも
に理想的な状態であることはほとんどの場合なく、多少
なりとも凹凸を含んでいるのが常である。従つてこの凹
凸を考慮して入れずに走査露光をすると、マスクと感光
基板との間隔が位置によつて変化することになる。つま
り、マスクと感光基板とを平均的にある間隔に保持して
も、表面の凹凸のため、局所的に見ると、マスクと感光
基板との間隔が位置によつて異なる（マスクと感光基板
とが投影光学系に関して共役でなくなる）。By the way, the projection optical system 1
As shown in FIG. 7, the focal length of the
1 and the focal length d2 on the emission side are constant. Therefore, in order to accurately transfer the pattern formed on the mask 2, the interval between the mask 2 and the photosensitive substrate 3 must be kept constant at an appropriate interval during scanning exposure. However, in most cases, both the mask surface 2A and the photosensitive substrate surface 3A are in an ideal state, and it is usual that they include some irregularities. Therefore, if scanning exposure is performed without taking this unevenness into consideration, the distance between the mask and the photosensitive substrate changes depending on the position. That is, even if the mask and the photosensitive substrate are held at a certain distance on average, the distance between the mask and the photosensitive substrate is different depending on the position when viewed locally because of the unevenness of the surface. Is no longer conjugate with respect to the projection optics).
【０００４】しかも複数の投影光学系を並べて一度に大
きな面積を走査露光する方式の走査型露光装置の場合に
は焦点距離のばらつきもあるため、なおさら全ての露光
領域内においてマスクと感光基板とを共役に保つことは
難しい。この様子を図８に示す。このように走査露光中
にマスク２と感光基板３との間の間隔が変動する問題点
があつた。Further, in the case of a scanning type exposure apparatus of a type in which a plurality of projection optical systems are arranged to scan and expose a large area at a time, there is variation in focal length, so that the mask and the photosensitive substrate are all the more exposed in the entire exposure area. It is difficult to keep it conjugate. This state is shown in FIG. As described above, there is a problem in that the distance between the mask 2 and the photosensitive substrate 3 varies during scanning exposure.
【０００５】本発明は以上の点を考慮してなされたもの
で、露光領域におけるマスクと感光基板との間隔が常に
露光に適切な間隔になるように制御しながら走査露光す
ることができる走査型露光装置を提案しようとするもの
である。The present invention has been made in consideration of the above points, and it is a scanning type capable of performing scanning exposure while controlling so that the distance between the mask and the photosensitive substrate in the exposure area is always appropriate for the exposure. It is intended to propose an exposure apparatus.
【０００６】[0006]
【課題を解決するための手段】かかる課題を解決するた
め本発明においては、マスク（２）上の複数の領域をそ
れぞれ照明し、該複数の領域のそれぞれの像を複数の投
影光学系（１２Ａ、１２Ｂ、１２Ｃ）を介して感光基板
（３）上に投影すると共に、マスク（２）と感光基板
（３）とを複数の投影光学系（１２Ａ、１２Ｂ、１２
Ｃ）に対して走査させることにより、マスク（２）の全
面を感光基板（３）上に露光する走査型露光装置におい
て、露光に先だつて、マスク（２）と感光基板（３）と
の相対的な間隔を、該マスク（２）及び該感光基板
（３）上の任意の位置について測定する測定手段（１７
Ａ、１７Ｂ）と、測定手段（１７Ａ、１７Ｂ）によつて
測定された相対的な間隔と位置とを関連付けて記憶する
記憶手段（１９）と、マスク（２）及び又は感光基板
（３）を駆動し、該マスク（２）と該感光基板（３）と
の相対的な位置関係を補正する位置補正手段（２１、２
２）と、露光の際、記憶された相対的な間隔と位置とに
基づいて、マスク（２）の像が投影される複数の領域に
関するマスク（２）と感光基板（３）との相対的な間隔
が所定の関係を満たすように位置補正手段（２１、２
２）を制御する制御手段（２０）とを設けるようにす
る。In order to solve such a problem, according to the present invention, a plurality of regions on a mask (2) are illuminated, and respective images of the plurality of regions are projected onto a plurality of projection optical systems (12A). , 12B, 12C) to project onto the photosensitive substrate (3) and the mask (2) and the photosensitive substrate (3) are projected onto the plurality of projection optical systems (12A, 12B, 12).
In a scanning type exposure apparatus that exposes the entire surface of the mask (2) onto the photosensitive substrate (3) by scanning with respect to (C), the mask (2) and the photosensitive substrate (3) are moved relative to each other prior to exposure. Measuring means (17) for measuring a specific interval at arbitrary positions on the mask (2) and the photosensitive substrate (3).
A, 17B), storage means (19) for storing the relative distance and position measured by the measurement means (17A, 17B) in association with each other, the mask (2) and / or the photosensitive substrate (3). Position correction means (21, 2) for driving and correcting the relative positional relationship between the mask (2) and the photosensitive substrate (3).
2) and the relative distance between the mask (2) and the photosensitive substrate (3) regarding a plurality of regions on which the image of the mask (2) is projected, based on the relative distances and positions stored during exposure. Position correction means (21, 2
A control means (20) for controlling 2) is provided.
【０００７】また本発明においては、記憶手段（１９）
は、マスク（２）及び感光基板（３）の走査方向に対し
て、複数の投影光学系（１２Ａ、１２Ｂ、１２Ｃ）それ
ぞれの結像面の位置に関する情報を記憶しており、制御
手段（２０）は、該複数の投影光学系（１２Ａ、１２
Ｂ、１２Ｃ）の焦点距離の差分に基づいて制御を行うよ
うにする。Further, in the present invention, storage means (19)
Stores information about the position of the image plane of each of the plurality of projection optical systems (12A, 12B, 12C) in the scanning direction of the mask (2) and the photosensitive substrate (3), and the control means (20). ) Is the projection optical system (12A, 12A).
Control is performed based on the difference between the focal lengths of B and 12C).
【０００８】また本発明においては、位置補正手段（２
１、２２）は、マスク（２）及び又は感光基板（３）の
面に対して直交する方向（Ｚ方向）と、走査方向（Ｘ方
向）を中心軸（Ｌ１）とした第１の回転方向（Ｚθ1 ）
と、又は走査方向（Ｘ方向）と直交する方向（Ｚ方向）
とに垂直な方向（Ｙ方向）を中心軸（Ｌ２）とした第２
の回転方向（Ｚθ2 ）とのうち少なくとも１つを駆動方
向とするようにする。In the present invention, the position correction means (2
1, 22) are the first rotation directions with the central axis (L1) being the direction (Z direction) orthogonal to the surface of the mask (2) and / or the photosensitive substrate (3) and the scanning direction (X direction). (Zθ 1 )
Or the direction (Z direction) orthogonal to the scanning direction (X direction)
Second with the central axis (L2) in the direction (Y direction) perpendicular to and
At least one of the rotation direction (Zθ 2 ) of the drive direction is set as the drive direction.
【０００９】[0009]
【作用】露光に先だつて、複数の投影光学系（１２Ａ、
１２Ｂ、１２Ｃ）が照明するマスク（２）と感光基板
（３）との相対的な間隔を任意の位置について求めてお
き、走査露光の際にはこの相対的な間隔に基づいてマス
ク（２）と感光基板（３）との相対的な間隔が所定の関
係を満たすように制御するようにしたことにより、マス
ク（２）と感光基板（３）との間の間隔をほぼ一定に保
つことができる。Before the exposure, a plurality of projection optical systems (12A,
The relative distance between the mask (2) illuminated by (12B, 12C) and the photosensitive substrate (3) is obtained at an arbitrary position, and the mask (2) is based on this relative distance during scanning exposure. The relative distance between the photosensitive substrate (3) and the photosensitive substrate (3) is controlled to satisfy a predetermined relationship, so that the distance between the mask (2) and the photosensitive substrate (3) can be kept substantially constant. it can.
【００１０】また走査方向に対して複数の投影光学系
（１２Ａ、１２Ｂ、１２Ｃ）それぞれの結像面の位置に
関する情報を予め求めておき、これら複数の投影光学系
（１２Ａ、１２Ｂ、１２Ｃ）の焦点距離の差分に基づい
てマスク（２）と感光基板（３）との位置関係を補正す
るようにしたことにより、光学的な距離の違いによる露
光パターンの違いもなくすことができる。Information concerning the positions of the image planes of the plurality of projection optical systems (12A, 12B, 12C) in the scanning direction is obtained in advance, and these projection optical systems (12A, 12B, 12C) are searched. By correcting the positional relationship between the mask (2) and the photosensitive substrate (3) based on the difference in focal length, it is possible to eliminate the difference in exposure pattern due to the difference in optical distance.
【００１１】またマスク（２）及び又は感光基板（３）
の面に対して直交する方向（Ｚ方向）と、走査方向（Ｘ
方向）を中心軸（Ｌ１）とした第１の回転方向（Ｚ
θ1 ）と、又は走査方向（Ｘ方向）と直交する方向（Ｚ
方向）とに垂直な方向（Ｙ方向）を中心軸（Ｌ２）とし
た第２の回転方向（Ｚθ2 ）とのうち少なくとも１つを
駆動方向とすることによりどのような位置の補正にも迅
速に対応することができる。Further, the mask (2) and / or the photosensitive substrate (3)
Direction (Z direction) and the scanning direction (X
Direction) with the central axis (L1) as the first rotation direction (Z
θ 1 ) or the direction (Z direction) orthogonal to the scanning direction (X direction).
Direction) and a second rotation direction (Zθ 2 ) having a central axis (L2) perpendicular to the direction (Y direction) as a driving direction, so that any position can be corrected quickly. Can correspond to.
【００１２】[0012]
【実施例】以下図面について、本発明の一実施例を詳述
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.
【００１３】マスク２と感光基板３との間隔を制御する
には、マスク２を固定しておき感光基板３側を駆動する
方法と、感光基板３を固定しておきマスク２側を駆動す
る方法と、マスク２及び感光基板３共に駆動する方法と
が考えられる。ここではマスク２側を固定しておき、感
光基板３側を駆動させる場合を例に複数の投影光学系を
用いる走査型露光装置を説明する。In order to control the distance between the mask 2 and the photosensitive substrate 3, the mask 2 is fixed and the photosensitive substrate 3 side is driven, and the photosensitive substrate 3 is fixed and the mask 2 side is driven. Then, a method of driving both the mask 2 and the photosensitive substrate 3 can be considered. Here, a scanning type exposure apparatus using a plurality of projection optical systems will be described by taking as an example the case where the mask 2 side is fixed and the photosensitive substrate 3 side is driven.
【００１４】この走査型露光装置の概略構成を図１に示
す。走査型露光装置１１は、３つの投影光学系１２Ａ、
１２Ｂ、１２Ｃを挟んで対向するように配置されたマス
ク２及び感光基板３を紙面に対して直交する方向（Ｘ方
向）に同期走査させることによりマスク２上に形成（描
画）されたパターンを感光基板３上に投影露光する方式
のものである。３つの結像光学系１２Ａ、１２Ｂ、１２
Ｃは図中に示すＹ方向に沿つて千鳥状に配置され、それ
ぞれの投影領域は隣接する領域どうしがＹ方向に一部重
複しており、各露光領域の端部が互いに重複することに
よつて大きな面積を一度の走査によつて露光できるよう
になされている。A schematic structure of this scanning type exposure apparatus is shown in FIG. The scanning exposure apparatus 11 includes three projection optical systems 12A,
The pattern formed (drawn) on the mask 2 is exposed by synchronously scanning the mask 2 and the photosensitive substrate 3 arranged so as to face each other with 12B and 12C interposed therebetween in a direction (X direction) orthogonal to the paper surface. This is a method of performing projection exposure on the substrate 3. Three imaging optical systems 12A, 12B, 12
Cs are arranged in a zigzag pattern along the Y direction shown in the figure, and adjacent projection regions partially overlap each other in the Y direction, and the end portions of the exposure regions overlap each other. Therefore, a large area can be exposed by one scan.
【００１５】続いて各部の構成を説明する。マスク２及
び感光基板３はそれぞれホルダ１３及び１４によつて断
面コ字状の走査ステージ１５に取り付けられている。と
ころで実際の装置ではこの走査ステージ１５の開口部分
が下を向くような状態で使用される。この走査ステージ
１５はレール１６Ａに沿つてＸ方向に移動できるように
本体１６に取り付けられている。この走査ステージ１５
の移動によつてマスク２と感光基板３との同期走査が実
現される。因に同期走査されるマスク２及び感光基板３
を照明する照明光学系１６Ｂは本体１６に保持されてい
る。Next, the configuration of each part will be described. The mask 2 and the photosensitive substrate 3 are attached to a scanning stage 15 having a U-shaped cross section by holders 13 and 14, respectively. By the way, in an actual apparatus, the scanning stage 15 is used in a state in which the opening portion faces downward. The scanning stage 15 is attached to the main body 16 so as to be movable in the X direction along the rail 16A. This scanning stage 15
By the movement of, the synchronous scanning of the mask 2 and the photosensitive substrate 3 is realized. Due to this, the mask 2 and the photosensitive substrate 3 which are synchronously scanned
An illuminating optical system 16B for illuminating the is held by the main body 16.
【００１６】ところでこの走査型露光装置１１にはマス
ク２と感光基板３とを正確な位置関係に調整するための
２つの検出光学系が用意されている。１つはマスク２と
感光基板３との相対位置を計測するのに用いられるアラ
イメントセンサ（図示せず）である。また１つはマスク
２と感光基板３との相対的な間隔を計測するのに用いら
れるフオーカスセンサ１７である。因にマスク２と感光
基板３との相対的な間隔は投影光学系１２Ａ、１２Ｂ及
び１２Ｃの焦点方向を示すので、以下、フオーカス方向
（図中、Ｚ方向）という。By the way, the scanning type exposure apparatus 11 is provided with two detection optical systems for adjusting the mask 2 and the photosensitive substrate 3 in an accurate positional relationship. One is an alignment sensor (not shown) used to measure the relative position between the mask 2 and the photosensitive substrate 3. The other is a focus sensor 17 used to measure the relative distance between the mask 2 and the photosensitive substrate 3. Incidentally, the relative distance between the mask 2 and the photosensitive substrate 3 indicates the focal direction of the projection optical systems 12A, 12B and 12C, and is hereinafter referred to as the focus direction (Z direction in the drawing).
【００１７】フオーカスセンサ１７は発光素子１７Ａと
受光素子１７Ｂの２つの光学素子によつて構成されてい
る。これら一対の発光素子１７Ａ及び受光素子１７Ｂは
それぞれ投影光学系の部材中にオフアクシスの位置に配
置されている。計測時には発光素子１７Ａからマスク面
２Ａ及び感光基板面３Ａの両面へ向けて照明光が射出
し、各面で反射された反射光から得られる像の相対的な
距離を測定することによりマスク面２Ａと感光基板面３
Ａとの相対的な間隔を測定するようになされている。こ
の実施例ではマスク面２Ａと感光基板面３Ａ上の複数の
点について相対的な間隔を測定することにする。このと
き測定点は多いほど後述する平面度マツプの精度を高め
ることができるが、極端に多すぎると信号処理に余分に
時間がかかるため適当な数を選択することにする。The focus sensor 17 is composed of two optical elements, a light emitting element 17A and a light receiving element 17B. The pair of the light emitting element 17A and the light receiving element 17B are arranged at off-axis positions in the members of the projection optical system. At the time of measurement, illumination light is emitted from the light emitting element 17A toward both the mask surface 2A and the photosensitive substrate surface 3A, and the mask surface 2A is measured by measuring the relative distance of the image obtained from the reflected light reflected by each surface. And photosensitive substrate surface 3
It is designed to measure the relative distance from A. In this embodiment, relative distances between a plurality of points on the mask surface 2A and the photosensitive substrate surface 3A are measured. At this time, the more the number of measurement points is, the higher the accuracy of the flatness map described later can be increased. However, if the number of measurement points is excessively large, it takes extra time for signal processing.
【００１８】このようにフオーカスセンサ１７によつて
測定された各測定点の検出結果Ｓ１は検出系１８を介し
て記憶装置１９に与えられ、固定デイスク等の記憶媒体
に位置情報として格納される。ところで検出系１８から
与えられる計測値はマスク２と感光基板３との相対的な
間隔でしかないため、図２（Ａ）に示すように、マスク
２に凹凸があつたのかそれとも感光基板３に凹凸があつ
たのかの区別がつかない。The detection result S1 of each measurement point thus measured by the focus sensor 17 is given to the storage device 19 via the detection system 18 and stored as position information in a storage medium such as a fixed disk. . By the way, since the measurement value given from the detection system 18 is only the relative distance between the mask 2 and the photosensitive substrate 3, as shown in FIG. 2A, whether the mask 2 has irregularities or the photosensitive substrate 3 is uneven. I can't tell if there are irregularities.
【００１９】そこで実施例では、図２（Ｂ）に示すよう
に、マスク２が理想的な平面であると仮定し、全ての凹
凸がプレート３側にあるものとする。すなわちマスク面
２Ａを基準として計測値を基に感光基板３の側の高さや
傾きを制御する。このため記憶装置１９は検出系１８か
ら与えられた検出結果Ｓ１を基に感光基板面３Ａ上の凹
凸を等高線で結んだ曲面（以下、これを平面度マツプと
いう）を生成し、これを記憶するようになされている。Therefore, in the embodiment, as shown in FIG. 2B, it is assumed that the mask 2 is an ideal flat surface, and all the irregularities are on the plate 3 side. That is, the height and the inclination of the side of the photosensitive substrate 3 are controlled based on the measured value with the mask surface 2A as a reference. Therefore, the storage device 19 generates a curved surface (hereinafter referred to as a flatness map) in which the unevenness on the photosensitive substrate surface 3A is connected by contour lines based on the detection result S1 given from the detection system 18 and stores it. It is done like this.
【００２０】制御系２０はこの平面度マツプを基に駆動
系２１、２２及び２３をそれぞれ制御し、ホルダ１３、
１４及び走査ステージ１５の位置を補正するようになさ
れている。このように平面度マツプに沿つて露光領域内
の感光基板３を制御できればマスク２と感光基板３との
間隔を常に最適化することができる。しかし感光基板３
は投影光学系１２Ａ〜１２Ｃに対応する個々の露光領域
ごとに動かすことができない。The control system 20 controls the drive systems 21, 22 and 23 on the basis of this flatness map, and the holder 13,
The positions of the scanning stage 14 and the scanning stage 15 are corrected. If the photosensitive substrate 3 in the exposure area can be controlled along the flatness map in this way, the distance between the mask 2 and the photosensitive substrate 3 can be always optimized. However, photosensitive substrate 3
Cannot be moved for each individual exposure area corresponding to the projection optical systems 12A to 12C.
【００２１】そこでこの走査型露光装置１１は、露光領
域内におけるマスク２と感光基板３との間隔を最適にす
るような、また後述のＺ、Ｚθ1 、Ｚθ2 方向の移動や
回転によつて制御できるような面として近似面を作成す
る。そして、図３に示すように、感光基板３を走査方向
（Ｘ方向）を中心軸Ｌ１とした回転方向Ｚθ1 や走査方
向（Ｘ方向）及びフオーカス方向（Ｚ方向）に対してそ
れぞれ直交する方向（Ｙ方向）を中心軸Ｌ２とした回転
方向Ｚθ2 に回転させて（ただし、Ｚθ2 を駆動する時
は走査方向に２列投影光学系がならんでいる場合）近似
面に一致させるように制御するようにする。Therefore, the scanning type exposure apparatus 11 optimizes the distance between the mask 2 and the photosensitive substrate 3 in the exposure area, and also by moving or rotating in the Z, Zθ 1 and Zθ 2 directions described later. Create an approximate surface as a surface that can be controlled. As shown in FIG. 3, the photosensitive substrate 3 is rotated in a direction orthogonal to the rotation direction Zθ1 with the scanning direction (X direction) as the central axis L1, the scanning direction (X direction), and the focus direction (Z direction). Rotation is performed in the rotation direction Zθ 2 with the Y axis as the central axis L2 (however, when Zθ 2 is driven, when the two-row projection optical system is aligned in the scanning direction), control is performed so as to match the approximate surface. To do so.
【００２２】この近似面の作成方法には様々なものが考
えられる。まず簡易的な方法として最小自乗法を使つた
ものが考えられる。この方法を用いる場合には、感光基
板面３Ａのうち走査方向（Ｘ方向）に対して直交する方
向（Ｙ方向）に並ぶ複数の点について平面度を求め、こ
れら複数の平面度について最小自乗法による近似線ＬV
を作成する。この近似線ＬV を図４に示す。そして露光
時には走査方向上の各位置について求められている近似
線ＬV に感光基板面３Ａが一致するようにホルダ１４を
回転（Ｚθ1 ）又は移動（Ｚ方向）させるようにする。Various methods are conceivable for creating this approximate surface. First, as a simple method, a method using the least squares method can be considered. When this method is used, the flatness is obtained for a plurality of points arranged in the direction (Y direction) orthogonal to the scanning direction (X direction) on the photosensitive substrate surface 3A, and the least squares method is applied to the plurality of flatness. Approximate line LV
To create. This approximate line LV is shown in FIG. During exposure, the holder 14 is rotated (Zθ 1 ) or moved (Z direction) so that the photosensitive substrate surface 3A coincides with the approximate line LV obtained for each position in the scanning direction.
【００２３】ところで走査型露光装置１１は３つの投影
光学系１２Ａ、１２Ｂ、１２Ｃを有する。このため単純
にマスク２と感光基板３とを近似面に合わせるだけでは
各投影光学系１２Ａ、１２Ｂ、１２Ｃの焦点距離の違い
から最適な位置とならなくなるおそれがある。そこで各
投影光学系１２Ａ、１２Ｂ、１２Ｃについての焦点距離
の差も平面度マツプに考慮する。The scanning exposure apparatus 11 has three projection optical systems 12A, 12B and 12C. Therefore, if the mask 2 and the photosensitive substrate 3 are simply aligned with each other on the approximate surface, the optimal position may not be achieved due to the difference in the focal length of the projection optical systems 12A, 12B, and 12C. Therefore, the difference in focal length between the projection optical systems 12A, 12B, and 12C is also considered in the flatness map.
【００２４】例えばＹ方向に並ぶ複数の投影光学系１２
Ａ、１２Ｂ、１２Ｃに焦点距離の差がある場合にはその
まま走査露光すると、図５に示すように、感光基板３の
Ｙ方向にあたかもうねりが生じているかと同じことが言
える。つまり感光基板３の凹凸と同じ判断ができる。こ
の場合には走査露光中に走査方向（Ｘ方向）と平行な中
心軸Ｌ１を中心に感光基板３を回転（Ｚθ1 ）させれば
良い。For example, a plurality of projection optical systems 12 arranged in the Y direction
If there is a difference in focal length between A, 12B, and 12C, if scanning exposure is performed as it is, the same thing can be said as to whether or not the waviness has occurred in the Y direction of the photosensitive substrate 3, as shown in FIG. That is, the same judgment as the unevenness of the photosensitive substrate 3 can be made. In this case, the photosensitive substrate 3 may be rotated (Zθ 1 ) about the central axis L1 parallel to the scanning direction (X direction) during scanning exposure.
【００２５】このように走査型露光装置１１はマスク２
と感光基板３との間隔について求められた近似面と焦点
距離との情報に基づいてマスク２と感光基板３との位置
関係を補正することによつて投影光学系１２Ａ、１２
Ｂ、１２Ｃを介して照明される露光領域のそれぞれにつ
いてマスク２のパターンを正確に感光基板３に転写でき
るようになされている。As described above, the scanning type exposure apparatus 11 uses the mask 2
Of the projection optical systems 12A and 12 by correcting the positional relationship between the mask 2 and the photosensitive substrate 3 based on the information of the approximate surface and the focal length obtained for the distance between the photosensitive substrate 3 and the photosensitive substrate 3.
The pattern of the mask 2 can be accurately transferred to the photosensitive substrate 3 for each of the exposure areas illuminated via B and 12C.
【００２６】以上の構成において、走査型露光装置１１
による走査露光動作を説明する。まず露光に先立つて、
走査型露光装置１１はマスク２と感光基板３との相対的
な間隔をマスク２及び感光基板３上の任意の位置につい
て測定し、位置と相対的な関係を記憶装置１９の記憶媒
体に記憶しておく。またこれらの情報を基に前述した平
面度マツプを作成し、近似面を作成しておく。また各投
影光学系１２Ａ、１２Ｂ、１２Ｃの焦点距離の差に基づ
く補正量も求めておく。In the above structure, the scanning type exposure apparatus 11
The scanning exposure operation by will be described. First, prior to exposure,
The scanning exposure apparatus 11 measures the relative distance between the mask 2 and the photosensitive substrate 3 at arbitrary positions on the mask 2 and the photosensitive substrate 3, and stores the relative relationship with the position in the storage medium of the storage device 19. Keep it. In addition, the above-mentioned flatness map is created based on these pieces of information to create an approximate surface. Further, the correction amount based on the difference in the focal lengths of the projection optical systems 12A, 12B and 12C is also obtained.
【００２７】これらの処理によつて必要な情報が求めら
れると、制御系２０は駆動系２３に制御データを与え、
走査ステージ１５の走査を開始させる。また制御系２０
は駆動系２２に制御データを与えて感光基板３が載置さ
れているホルダ１４をＺ方向に移動し、又は２つの中心
軸Ｌ１、Ｌ２について回転（Ｚθ1 、Ｚθ2 ）させるこ
とにより（ただしＺθ2 を駆動する時は投影光学系が走
査方向に２列ならんでいる時。以下同様）走査露光中に
おける感光基板３とマスク２との位置を最適な状態に制
御させる。When the necessary information is obtained by these processes, the control system 20 gives the control data to the drive system 23,
The scanning of the scanning stage 15 is started. In addition, the control system 20
By giving control data to the drive system 22 to move the holder 14 on which the photosensitive substrate 3 is placed in the Z direction, or by rotating (Zθ 1 , Zθ 2 ) about the two central axes L1 and L2 (however, When Zθ 2 is driven, the projection optical system is arranged in two rows in the scanning direction. The same applies hereinafter) The positions of the photosensitive substrate 3 and the mask 2 during scanning exposure are controlled to an optimum state.
【００２８】このように感光基板３についての制御デー
タを制御系２０から駆動系２２に送り、そのデータ値に
基づいて感光基板３を駆動するのであるが、制御データ
の送出時点で露光すべき領域部分についての制御データ
を制御系２０から駆動系２２に送つたのでは処理が遅れ
てしまう。すなわち駆動系２２が制御データに基づいた
動作を開始するまでの間に感光基板３が走行して実際に
位置補正のための制御が実行された際には、制御系２０
が指定した位置に対して遅れた位置について感光基板３
の駆動が実行されてしまう。As described above, the control data for the photosensitive substrate 3 is sent from the control system 20 to the drive system 22, and the photosensitive substrate 3 is driven based on the data value. The area to be exposed at the time of sending the control data. If the control data for the part is sent from the control system 20 to the drive system 22, the processing will be delayed. That is, when the photosensitive substrate 3 travels and the control for position correction is actually executed before the drive system 22 starts the operation based on the control data, the control system 20
Regarding the position delayed from the position specified by
Will be driven.
【００２９】そこで制御系２０は、感光基板３の走行速
度（すなわち走査ステージ１５の走査速度）を考慮し、
指定位置でホルダ１４についての駆動が完了されている
ように制御位置に対して少し手前の位置で制御データを
送るようになされている。Therefore, the control system 20 considers the traveling speed of the photosensitive substrate 3 (that is, the scanning speed of the scanning stage 15),
The control data is sent at a position slightly before the control position so that the driving of the holder 14 is completed at the designated position.
【００３０】例えば制御系２０から駆動系２２へ制御デ
ータとして位置情報が送られるまでの時間をｔ1 とし、
駆動系２２が位置情報を判断して駆動を完了するまでの
時間をｔ2 とし、またこの際における感光基板３の移動
速度がｖであるとすると、ある露光領域が位置ｘに来た
ときに感光基板３の位置を補正したいのであれば、次式For example, the time until the positional information is sent from the control system 20 to the drive system 22 as control data is t1,
Assuming that the time required for the drive system 22 to determine the position information and complete the drive is t2, and the moving speed of the photosensitive substrate 3 at this time is v, the exposure is performed when an exposure region reaches the position x. If you want to correct the position of the board 3,
【数１】 によつて表される位置Ｘに露光領域が来たときに位置情
報を送る。[Equation 1] The position information is sent when the exposure area comes to the position X represented by.
【００３１】このように走査型露光装置１１は制御デー
タを基に、必要に応じて感光基板３をＺ方向や２つの中
心軸Ｌ１、Ｌ２を中心に回転（Ｚθ1 、Ｚθ2 ）させな
がら走査露光する（ただしＺθ2 を駆動する時は投影光
学系が走査方向に２列ならんでいる場合）。以上の構成
によれば、予め測定されて記憶されている相対的な間隔
と位置との情報を基に走査露光中におけるマスク２と感
光基板３との位置関係を常に最適な状態（解像力やテレ
セントリツク性能が最良な状態）に制御することによ
り、精度の良い状態でマスク２上のパターンを感光基板
３上へ転写することができる。As described above, the scanning type exposure device 11 performs scanning exposure while rotating the photosensitive substrate 3 (Zθ1, Zθ2) about the Z direction or the two central axes L1 and L2 as needed based on the control data. (However, when driving Zθ 2 , the projection optical system is arranged in two rows in the scanning direction). According to the above configuration, the positional relationship between the mask 2 and the photosensitive substrate 3 during the scanning exposure is always in the optimum state (resolution or telecentricity) based on the information on the relative distance and the position measured and stored in advance. The pattern on the mask 2 can be transferred onto the photosensitive substrate 3 in a highly accurate state by controlling it so that the trick performance is the best.
【００３２】また感光基板３の位置補正を光軸方向（Ｚ
方向）だけでなく、走査方向（Ｘ方向）に対して平行な
中心軸Ｌ１や走査方向に直交する中心軸Ｌ２に対して回
転させ、感光基板３の傾きを補正できるようにしたこと
により、マスク面２Ａや感光基板面３Ａの形状に即した
細かい制御を実現することができる。Further, the position of the photosensitive substrate 3 is corrected in the optical axis direction (Z
Not only the direction) but also the center axis L1 parallel to the scanning direction (X direction) and the center axis L2 orthogonal to the scanning direction so that the inclination of the photosensitive substrate 3 can be corrected, and thus the mask It is possible to realize fine control according to the shapes of the surface 2A and the photosensitive substrate surface 3A.
【００３３】なお上述の実施例においては、マスク２と
感光基板３との相対的な位置関係を補正する場合、マス
ク２側を固定して感光基板３側のみを走査露光中に逐次
駆動する場合について述べたが、本発明はこれに限ら
ず、感光基板３側を固定してマスク２側のみを走査露光
中に逐次駆動しても良く、またマスク２と感光基板３の
両方を走査露光中に逐次駆動しても良い。In the above-described embodiment, when the relative positional relationship between the mask 2 and the photosensitive substrate 3 is corrected, the mask 2 side is fixed and only the photosensitive substrate 3 side is sequentially driven during scanning exposure. However, the present invention is not limited to this, and the photosensitive substrate 3 side may be fixed and only the mask 2 side may be sequentially driven during scanning exposure, or both the mask 2 and the photosensitive substrate 3 may be driven during scanning exposure. May be sequentially driven.
【００３４】また上述の実施例においては、投影光学系
を３つ用いる場合について述べたが、本発明はこれに限
らず、２つ用いる場合にも４つ以上用いる場合にも広く
適用し得る。さらに上述の実施例においては、投影光学
系１２Ａ〜１２Ｃを走査方向（Ｘ方向）及び投影光学系
の光軸方向（Ｚ方向）に対してそれぞれ直交する方向
（Ｙ方向）に沿つて一列に並べる場合について述べた
が、本発明はこれに限らず、これらＹ方向に並ぶ投影光
学系群を走査方向（Ｘ方向）に対して複数列並べる場合
にも適用し得る。Further, in the above-mentioned embodiment, the case where three projection optical systems are used has been described, but the present invention is not limited to this and can be widely applied when two projection optical systems are used or four or more projection optical systems are used. Further, in the above-described embodiment, the projection optical systems 12A to 12C are arranged in a line along the scanning direction (X direction) and the direction (Y direction) orthogonal to the optical axis direction (Z direction) of the projection optical system. Although the case has been described, the present invention is not limited to this, and can also be applied to a case where a plurality of projection optical system groups arranged in the Y direction are arranged in the scanning direction (X direction).
【００３５】例えば図６に示すように複数個の投影光学
系を走査方向に沿つて２列設けても良い。ところでこの
場合、１列目の投影光学系１２Ａ〜１２Ｃと２列目の投
影光学系１２Ｄ、１２Ｅとに焦点距離の差があると、そ
のまま走査露光したのでは１列目の露光パターンと２列
目の露光パターンとの間で焦点距離の違いによる差が生
じてしまう。そこでこの場合には、走査方向（Ｘ方向）
に対して直交する中心軸Ｌ２を中心としてマスク２や感
光基板３を回転（Ｚθ2 ）させれば良い。すなわち近似
面に一致するようにマスク２や感光基板３をＺ方向や２
つの軸Ｌ１、Ｌ２を中心として回転（Ｚθ1 、Ｚθ2 ）
させれば良い。これにより焦点距離によるパターン差を
小さくすることができる。For example, as shown in FIG. 6, a plurality of projection optical systems may be provided in two rows along the scanning direction. By the way, in this case, if there is a difference in focal length between the projection optical systems 12A to 12C in the first column and the projection optical systems 12D and 12E in the second column, scanning exposure is performed as it is, so that the exposure pattern in the first column and the second column There is a difference due to the difference in the focal length with respect to the eye exposure pattern. Therefore, in this case, the scanning direction (X direction)
The mask 2 and the photosensitive substrate 3 may be rotated (Zθ2) about a central axis L2 orthogonal to the center. That is, the mask 2 and the photosensitive substrate 3 are moved in the Z direction or 2 so as to match the approximate surface.
Rotation around two axes L1 and L2 (Zθ1, Zθ2)
You can do it. Thereby, the pattern difference due to the focal length can be reduced.
【００３６】さらに上述の実施例においては、近似面を
作成する際、最小自乗法を用いる場合について述べた
が、本発明はこれに限らず、他の方法を用いて近似面を
作成しても良い。例えば平面度の最高値を考慮する方法
も考えられる。最小自乗法による方法では、全体の平均
的な平面を得るために、微細な最高値又は最低値があつ
た場合、その部分だけ近似平面との差が大きくなつてし
まう。ところが露光においては微小なりとも、部分的な
ピークの存在は露光ムラにつながる。そのため露光領域
内全体に平均的な平面よりも、最高値と最低値をなだら
かに結ぶような平面の方が良い。Further, in the above-mentioned embodiment, the case of using the least square method when creating the approximate surface has been described, but the present invention is not limited to this, and the approximate surface can be created by using another method. good. For example, a method of considering the maximum value of flatness can be considered. In the method using the least squares method, when there is a fine maximum value or minimum value in order to obtain an average plane for the whole, the difference from the approximate plane becomes large only for that portion. However, in exposure, even if it is minute, the presence of partial peaks leads to uneven exposure. Therefore, a plane that smoothly connects the highest value and the lowest value is better than an average plane over the entire exposure area.
【００３７】また焦点深度を考慮した方法も考えられ
る。光学系には焦点深度があり、この範囲内であれば焦
点が合う。すなわちマスク２及び又は感光基板３に凹凸
があつても、また複数の投影光学系１２Ａ〜１２Ｃの焦
点距離に差があつてもこの範囲内であればマスク２や感
光基板３の駆動がいらなくなる。そこでこの焦点深度を
予め計測しておき、その範囲内にプレートを駆動させる
ことも考えられる。A method considering the depth of focus is also conceivable. The optical system has a depth of focus, and is in focus within this range. That is, even if the mask 2 and / or the photosensitive substrate 3 have irregularities, or if there are differences in the focal lengths of the plurality of projection optical systems 12A to 12C, if the mask 2 and the photosensitive substrate 3 are within this range, it is not necessary to drive the mask 2 or the photosensitive substrate 3. . Therefore, it is possible to measure the depth of focus in advance and drive the plate within that range.
【００３８】また走査方向（Ｘ方向）及びフオーカス方
向（Ｚ方向）に対して直交する方向（Ｙ方向）に対して
複数の平面度を得たときに、平面度として極端に異なつ
た値が示されることも考えられる。この理由としてはプ
レートの部分的変形やゴミの付着、また検出器の異常等
が考えられる。この場合にはこれらの情報をそのまま使
用すると、異常値を使用することによつて他の平面度に
も影響が及ぶため正確な近似平面が得られなくなくおそ
れがある。そのようなことを防ぐためにある許容値を設
けて、その許容値に入つていなかつた平面度は使用しな
いということも考えられる。Further, when a plurality of flatnesses are obtained in a direction (Y direction) orthogonal to the scanning direction (X direction) and the focus direction (Z direction), extremely different flatness values are shown. It is also possible that Possible reasons for this include partial deformation of the plate, adhesion of dust, and abnormality of the detector. In this case, if these pieces of information are used as they are, there is a possibility that an accurate approximate plane cannot be obtained because the use of an abnormal value affects other flatness. It is possible that a certain tolerance is set to prevent such a situation and flatness that does not fall within the tolerance is not used.
【００３９】また上述の実施例においては、マスク２及
び感光基板３との間の相対的な間隔によつてマスク２を
基準とした感光基板３の平面度マツプを作成したが、本
発明はこれに限らず、感光基板３を基準としたマスク２
の平面度マツプを作成する場合にも、またマスク２及び
感光基板３のそれぞれについて平面度マツプを求めても
良い。マスク２及び感光基板３それぞれについての平面
度マツプが得られればマスク２と感光基板３間の相対的
な間隔が分かるため上記と同様な制御を適応することが
できる。Further, in the above-mentioned embodiment, the flatness map of the photosensitive substrate 3 with respect to the mask 2 is prepared by the relative distance between the mask 2 and the photosensitive substrate 3. Not only the mask 2 based on the photosensitive substrate 3
Even when the flatness map is created, the flatness map may be obtained for each of the mask 2 and the photosensitive substrate 3. If the flatness map for each of the mask 2 and the photosensitive substrate 3 is obtained, the relative distance between the mask 2 and the photosensitive substrate 3 is known, so that the same control as above can be applied.
【００４０】さらに上述の実施例においては、マスク２
や感光基板３を中心軸Ｌ１及びＬ２に対してそれぞれ回
転できるようにする場合について述べたが、本発明はこ
れに限らず、マスク２や感光基板３をＸ−Ｙ平面内で動
かさせるように（すなわち中心軸Ｌ１及びＬ２がそれぞ
れＸ−Ｙ平面内を動くように）しても良い。Further, in the above embodiment, the mask 2
The case in which the photosensitive substrate 3 and the photosensitive substrate 3 are rotatable with respect to the central axes L1 and L2 has been described, but the present invention is not limited to this, and the mask 2 and the photosensitive substrate 3 may be moved in the XY plane. (That is, the central axes L1 and L2 may each move in the XY plane).
【００４１】[0041]
【発明の効果】上述のように本発明によれば、マスクや
感光基板の面の状態によらず複数の露光領域についてマ
スクと感光基板との相対的な間隔を所定の関係を満たす
ように制御したことにより、従来に比して感光基板上に
転写されるパターンの精度を一段と高めることができ
る。As described above, according to the present invention, the relative distance between the mask and the photosensitive substrate is controlled so as to satisfy a predetermined relationship for a plurality of exposure regions regardless of the state of the surface of the mask or the photosensitive substrate. By doing so, the accuracy of the pattern transferred onto the photosensitive substrate can be further improved as compared with the conventional case.
【００４２】また複数の投影光学系についての焦点距離
も考慮して相対的な間隔を制御することにより一段と露
光パターンの精度を高めることができる。また走査方向
を中心軸とした第１の回転方向や、走査方向及びマスク
や感光基板と直交する方向のそれぞれに垂直な方向を中
心軸とした第２の回転方向についてもマスクや感光基板
を駆動できるようにしたことにより、どのような補正に
も迅速に対応することができ、転写されるパターンの精
度を一段と高めることができる。Further, the precision of the exposure pattern can be further improved by controlling the relative intervals in consideration of the focal lengths of the plurality of projection optical systems. Further, the mask and the photosensitive substrate are also driven in the first rotation direction having the scanning direction as the central axis and the second rotation direction having the direction perpendicular to the scanning direction and the direction orthogonal to the mask and the photosensitive substrate as the central axis. By doing so, it is possible to quickly respond to any correction, and it is possible to further improve the accuracy of the transferred pattern.
【図１】本発明による走査型露光装置の一実施例を示す
略線図である。FIG. 1 is a schematic diagram showing an embodiment of a scanning exposure apparatus according to the present invention.
【図２】マスク面と感光基板との両方に生じている凹凸
を感光基板のみの凹凸として見る様子の説明に供する略
線図である。FIG. 2 is a schematic diagram for explaining how to look at the unevenness occurring on both the mask surface and the photosensitive substrate as the unevenness only on the photosensitive substrate.
【図３】位置関係の補正に使用される駆動軸の説明に供
する略線図である。FIG. 3 is a schematic diagram for explaining a drive shaft used for correcting a positional relationship.
【図４】近似面の説明に供する略線図である。FIG. 4 is a schematic diagram for explaining an approximate surface.
【図５】焦点距離が異なる投影光学系を用いて走査露光
することによつて得られる焦点位置の軌跡を示す略線的
斜視図である。FIG. 5 is a schematic perspective view showing a locus of focal positions obtained by scanning exposure using projection optical systems having different focal lengths.
【図６】走査方向に複数列並んだ投影光学系の説明に供
する略線的斜視図である。FIG. 6 is a schematic perspective view for explaining a projection optical system arranged in a plurality of rows in the scanning direction.
【図７】走査型露光装置による走査露光の説明に供する
略線図である。FIG. 7 is a schematic diagram for explaining scanning exposure by a scanning exposure apparatus.
【図８】焦点距離のばらつきを示す略線図である。FIG. 8 is a schematic diagram showing variations in focal length.
１１……走査型露光装置、２……マスク、２Ａ……マス
ク面、３……感光基板、３Ａ……感光基板面、１５……
走査ステージ、１７……フオーカスセンサ、１７Ａ……
発光素子、１７Ｂ……受光素子、１８……検出系、１９
……記憶装置、２０……制御系、２１、２２、２３……
駆動系。11 ... Scanning exposure device, 2 ... Mask, 2A ... Mask surface, 3 ... Photosensitive substrate, 3A ... Photosensitive substrate surface, 15 ...
Scanning stage, 17 ... Focus sensor, 17A ...
Light emitting element, 17B ... Light receiving element, 18 ... Detection system, 19
...... Memory device, 20 ...... Control system, 21, 22, 23 ......
Drive system.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 浜田 智秀 東京都千代田区丸の内３丁目２番３号株式 会社ニコン内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomohide Hamada 3 2-3 Marunouchi, Chiyoda-ku, Tokyo Inside Nikon Corporation
Claims (3)
該複数の領域のそれぞれの像を複数の投影光学系を介し
て感光基板上に投影すると共に、前記マスクと前記感光
基板とを前記複数の投影光学系に対して走査させること
により、前記マスクの全面を前記感光基板上に露光する
走査型露光装置において、 前記露光に先だつて、前記マスクと前記感光基板との相
対的な間隔を、該マスク及び該感光基板上の任意の位置
について測定する測定手段と、 前記測定手段によつて測定された前記相対的な間隔と前
記位置とを関連付けて記憶する記憶手段と、 前記マスク及び又は前記感光基板を駆動し、該マスクと
該感光基板との相対的な位置関係を補正する位置補正手
段と、 前記露光の際、記憶された前記相対的な間隔と前記位置
とに基づいて、前記マスクの像が投影される前記複数の
領域に関する前記マスクと前記感光基板との相対的な間
隔が所定の関係を満たすように前記位置補正手段を制御
する制御手段とを具えることを特徴とする走査型露光装
置。1. Illuminating a plurality of areas on a mask,
By projecting the respective images of the plurality of regions onto a photosensitive substrate via a plurality of projection optical systems and scanning the mask and the photosensitive substrate with respect to the plurality of projection optical systems, In a scanning exposure apparatus that exposes the entire surface onto the photosensitive substrate, a measurement that measures the relative distance between the mask and the photosensitive substrate at any position on the mask and the photosensitive substrate prior to the exposure. Means, storage means for associating and storing the relative interval and the position measured by the measuring means, driving the mask and / or the photosensitive substrate, and the relative between the mask and the photosensitive substrate. Correcting means for correcting a physical positional relationship, and the above-mentioned plurality of regions related to the plurality of regions on which the image of the mask is projected based on the stored relative interval and the position during the exposure. A scanning exposure apparatus comprising: a control unit that controls the position correction unit so that a relative distance between the mask and the photosensitive substrate satisfies a predetermined relationship.
複数の投影光学系それぞれの結像面の位置に関する情報
を記憶しており、 前記制御手段は、 該複数の投影光学系の焦点距離の差分に基づいて前記制
御を行うことを特徴とする請求項１に記載の走査型露光
装置。2. The storage means stores information regarding the positions of the image planes of the plurality of projection optical systems with respect to the scanning direction of the mask and the photosensitive substrate, and the control means comprises: The scanning exposure apparatus according to claim 1, wherein the control is performed based on a difference between focal lengths of a plurality of projection optical systems.
方向と、前記走査方向を中心軸とした第１の回転方向
と、又は前記走査方向と前記直交する方向とに垂直な方
向を中心軸とした第２の回転方向とのうち少なくとも１
つを駆動方向とすることを特徴とする請求項１又は請求
項２に記載の走査型露光装置。3. The position correcting means includes a direction orthogonal to the surface of the mask and / or the photosensitive substrate, a first rotation direction with the scanning direction as a central axis, or the orthogonal direction to the scanning direction. At least one of the second rotation directions with the direction perpendicular to the rotation direction as the central axis.
3. The scanning type exposure apparatus according to claim 1, wherein one of them is set as a driving direction.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6125691A JPH07307284A (en) | 1994-05-16 | 1994-05-16 | Scanning exposure device |
| KR1019950010013A KR100346535B1 (en) | 1994-04-28 | 1995-04-27 | Scanning exposure apparatus |
| US08/654,382 US5777722A (en) | 1994-04-28 | 1996-05-28 | Scanning exposure apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6125691A JPH07307284A (en) | 1994-05-16 | 1994-05-16 | Scanning exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07307284A true JPH07307284A (en) | 1995-11-21 |
Family
ID=14916313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6125691A Pending JPH07307284A (en) | 1994-04-28 | 1994-05-16 | Scanning exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07307284A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010135803A (en) * | 1998-09-25 | 2010-06-17 | Nikon Corp | Exposure apparatus, exposure method, and substrate |
| JP2010157714A (en) * | 2008-12-31 | 2010-07-15 | Asml Holding Nv | Optically compensated unidirectional reticle bender |
-
1994
- 1994-05-16 JP JP6125691A patent/JPH07307284A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010135803A (en) * | 1998-09-25 | 2010-06-17 | Nikon Corp | Exposure apparatus, exposure method, and substrate |
| JP2010157714A (en) * | 2008-12-31 | 2010-07-15 | Asml Holding Nv | Optically compensated unidirectional reticle bender |
| KR101239288B1 (en) * | 2008-12-31 | 2013-03-06 | 에이에스엠엘 홀딩 엔.브이. | Optically compensated unidirectional reticle bender |
| US8553207B2 (en) | 2008-12-31 | 2013-10-08 | Asml Holdings N.V. | Optically compensated unidirectional reticle bender |
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