JPH06506986A - Method and equipment for processing products in gas discharge plasma - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Product processing methods and equipment technology in gas discharge plasma TECHNICAL FIELD This invention relates generally to methods and apparatus for hardening tools and machine elements, and more particularly to , relates to a method and apparatus for processing products in a gas discharge plasma.

Background technology Work includes preheating the product to working temperature and maintaining the product at a temperature within a set range. In a gas discharge plasma, the discharge is carried out between an anode and a cathode in space. Methods for processing products are known in the art [as described by Yu Lakht, et al. Chemical heat treatment of materials +1985, Metallurgia PH, Moscow, pp. 177-181 (Rom. (see English).

In the above method, the gas discharge plasma is charged with a reactive gas within the range of 10 to 1000 Pa. It is formed using a glow discharge at high pressure. Nitrogen is the most common reactive gas. Therefore, this method is called ion nitriding. The ion nitriding method is Including the initiation of an abnormal glow discharge between the product (cathode) and the anode; The voltage is 400-100OV. In fact, the total potential drop in glow discharge is Concentrates on the cathode potential drop area of the sword. The ions of the reactant gas (nitrogen) are cathode is accelerated in the region of reduced potential and collides with the surface of the product being processed, causing said surface to It is heated and simultaneously diffused deep to form a hardened surface layer.

However, due to the high energy ions of the reactant gases carried out during ion-chemical processing, Collisions on the product surface during processing are caused by so-called cathode sputtering on the surface of the product being processed. This results in a decrease in the initial quality of the surface finish.

This process is carried out by applying a relatively high voltage (400 to 100 OV) to the product being treated. glow discharge can turn into arc discharge (at the beginning of the process) stage). The cathode spot of arc discharge is made of treated material. This method causes surface corrosion of the product to a higher degree than cathode sputtering. this pro by gradually carrying out the process (i.e. by reducing the discharge current and voltage). ), arcing is reduced. However, this measure does not affect processing power. Ru. carrying out the method, including a direct current source electrically coupled to the cathode and the anode; Devices intended for the treatment of products in gas discharge plasma are known. [“Chemical heat treatm” by Yu Lakhtin et al. ent of materials-1985, Metalurgia PH , Moscow, pp. 1.77-181 (in Russian)].

A chamber containing the product to be treated is used as an anode in the device, and a cathode is used as the anode. It's the product itself.

The DC source allows infinite adjustment of the voltage within a range of 100 OV.

The action chamber is equipped with a pump to create a vacuum and a pressure of 10 to 1000 Pa in the chamber. The reactor gas is in communication with a reactant gas supply source.

When a variable voltage is applied to the electrodes, i.e. cathode and anode, a glow is emitted in the room. electricity is initiated, whereby the product (cathode) is bombarded with ions of the reactant gas. Ru. As a result, the product is heated and its surface is saturated with ions of the reactant gas. , the surface layer of the product is hardened. However, the ion bombardment corrodes the surface layer of the nail surface finish. deteriorates the initial quality of

low temperature, including preheating the product to working temperature and maintaining the product at a temperature within the set range. Gas discharge plasma established between anode and cathode at reactant gas pressure One of the more state-of-the-art methods for processing products in the market is known (Fl, A , 63.783).

According to the method, a gas discharge plasma is established using a glow discharge.

This method involves placing the product in a working chamber (anode) containing a reactant gas (nitrogen-oxygen mixture). Preheat the product (cathode) to 400-580℃ and then maintain the product at the temperature. Including holding. Considering that the preheating process is strengthened7 and the microhardness of the diffusion layer is increased. Then, chemical heat treatment was carried out at a pressure of 101-10 Pa and accelerated to 200 eV. The glow discharge is strengthened by the emitted electrons.

The method is carried out in a glow discharge plasma and the product to be treated serves as a cathode. Because the product surface is subject to ion bombardment which degrades the initial quality of the surface finish, it corrodes be done.

Direct current electrically coupled to the cathode and anode placed in the reaction waste medium under low pressure. Apparatus for carrying out the method for treating products in a gas discharge plasma, including a source, is known in the art. (Fl, A, 68,783).

In the above device, the anode is actually a working chamber that contains the cathode, which is the product under treatment. It is. The working chamber is equipped with a pump for creating a vacuum and a pump of 10 to 1000 P inside the chamber. and a source of reactant gas establishing a pressure of a. Glow discharge connects cathode and The discharge is initiated between the node and the enhanced by the heating coil (i.e. the discharge current is increased). one more A direct current source is provided to accelerate the electrons that ionize the reactant gas, the cathode of said power source being heated. It is coupled to a heating coil, the anode of which is coupled to a vacuum chamber.

However, this heating coil is sufficient for processing heavy weight products. The process time, especially the heating period, has to be delayed and the device adversely affect the throughput of the installation.

Initiation of vacuum arc discharge between the anode and integral cold cathode and bringing the product to working temperature Vacuum plug of the product by heating and maintaining within the set temperature range in the reactant gas medium Still other methods for processing products in a gas discharge plasma, including Zuma processing and is known (US, A, 4.734.1.78).

According to said method, including an integral cold cathode, more powerful (compared to glow discharge) ) A gas discharge plasma is formed using a vacuum arc. The unique feature of this method is The product under treatment is heated by collisions with metal ions. However, high Treatment of heavy products can corrode the product surface and degrade the initial quality of the surface finish. Which, including long heating times.

Furthermore, the fact that only relatively low weight products can be processed is a sign of the low effectiveness of this heating method. This is due to the optimum dose time and addition when processing heavy products. This is due to the disharmony between the thermal time and the overall throughput of the method. Narrowing down one's power.

An integrated cold cathode and anode, both contained within a vacuum chamber containing the reaction gas at low pressure. a gas discharge plug for carrying out the method, comprising a direct current source electrically coupled to the Equipment for processing products in Zuma is known (US, A, 4,734.178).

In the above equipment, the product under treatment is heated by metal ions generated by the cathode. Due to the heat generated, this equipment can cause corrosion of the product surface and reduce the initial quality of the surface finish. let

Furthermore, the said equipment cannot be used for full-scale processing of products, and the charging of dielectric products This severely limits its technical capabilities. .

Disclosure of invention The present invention has as its main objectives the preservation of the initial quality of the surface finish of the treated product; Gas discharge initiating vacuum arc discharge, allowing for expansion of process capacity and gas discharge, providing a method for treating a product in a plasma, as well as carrying out said method; A device for processing products in plasma, which increases processing capacity and improves the surface of said products. To provide a device equipped with a means that allows the initial quality of finishing to be maintained.

The above purpose is to initiate a vacuum arc discharge between the anode and the integral cold cathode, and to production by preheating to the working temperature and maintaining it within the set temperature range in the working gas medium. In a method of processing a product in a gas discharge plasma, including a vacuum plasma treatment of the product. According to the present invention, a two-stage vacuum arc discharge is generated between the anode and the integral cold cathode. The discharge is initiated at characterized by a gas discharge, both of said stages being isolated from each other, and the latter stage being isolated from said one. Working gas by electrons separated from the metal-gas phase of the plasma in a vacuum arc discharge This is achieved by the fact that it is established by the ionization of

The plasma of vacuum arc discharge is generated at low gas pressure within the range of 10-2 to 10 Pa. can be generated.

The product is exposed to primary preheating to the working temperature and maintained within the set temperature range. Vacuum plasma treatment of manufactured products is carried out in the gas phase of vacuum arc discharge plasma. It is desirable to do so.

The product under treatment, while being exposed to the main preheating, is further exposed to a directionally accelerated beam. It is preferable to treat it by

It is very reasonable to use nitrogen as working gas.

The main heating up to the working temperature of the product under treatment is applied to said product. 1ve) Preferably, this is carried out by applying a potential.

The main heating up to the working temperature of the product under treatment causes negative effects on said product. ) It can also be carried out by applying a potential.

The primary heating up to the working temperature of the product being treated is carried out by floating the product under treatment. ng) It is also carried out by applying an electric potential, and by the plasma of vacuum arc discharge. will be started.

It is desirable to use a directional beam of neutral particles as the directional accelerated beam.

The product under treatment is maintained within a set temperature range by applying a positive potential to said product. It is desirable that

It is advantageous to apply the positive potential stepwise to the product under treatment.

Maintaining the product under treatment within a set temperature range by applying a negative potential to it is desirable.

The product under treatment is first maintained within a set temperature range by applying a floating potential; It is convenient to start with a gas phase plasma of a vacuum arc discharge.

Remove the negative potential from the product under treatment and remove the vacuum as soon as arcing breakdown occurs on the product. It is practical to stop the gas phase of the arc discharge plasma.

After maintaining the product under treatment within the set temperature range in the gas stage of vacuum arc discharge , mJ It is effective to apply a coating film to the surface of the product.

Applying a coating film to the surface of the product under treatment in the gas phase of vacuum arc discharge plasma At the same time, a magnetic field is generated (build up), and the magnetic field lines of the magnetic field are generated by vacuum arc discharge. It is convenient to arrange it in a plane perpendicular to the direction of current flow.

The object of the present invention is that both are confined in a working gas medium at low pressure in a vacuum chamber. , a direct current source electrically coupled to the integral cold cathode and the main anode. The present invention can be used in a product processing apparatus in a waste discharge plasma for carrying out Then, the purpose of separating electrons from the metal-dregs stage of vacuum arc emission plasma was means present in the integral cold cathode band and generated by the integral cold cathode. This is achieved by the fact that the material is impermeable to metal ions.

As the main anode, the processing product itself can be used.

The product under treatment has a cathode and an electronic separation means, whereas the device has an integral cold cathode and an electronic separation means. 1 arranged so as to be able to be placed between the separation means and the additional anode; It is possible to connect one additive anode and a three-way switch coupled to both anodes and a DC source. is preferable.

The electronic separation means faces the integral cold cathode by one of their sides and by the other side. preferably formed as a V-shaped plate set facing the main anode by Yes.

The V-shaped plate of the electron separation means can be reciprocated against the wall of the vacuum chamber. .

The electronic separation means may be formed as a louverboard. is appropriate.

The electronic separation means has its movable parts spaced in overlapping bands along the long sleeve of the vacuum chamber. It can also be designed as an iris diaphragm, which is arranged as follows.

forming the electron separation means as an L-shaped branch with one of its ends facing the main anode; However, it is preferable to place the integral cold cathode in close proximity to the opposing nozzle ends. The secondary separating means is actually an integral part arranged so that its area of action faces the wall of the vacuum chamber. It is very effective to have a vacuum chamber wall in the cold cathode zone.

The electron separation means is a disk placed at a distance from the vacuum chamber wall. can be formed.

An integral cold cathode is placed against the vacuum chamber wall, the active site of which serves as an electron separation means. It is practical to arrange it so that it can be moved angularly through 80°.

The additional anode is formed as a hollow cylinder, one of the ends of which is connected to an integral cold cathode. facing the board, the interior of which accommodates the product to be treated, and surrounding an additional anode. a solenoid with a central hole between the electronic separation means and the end of the additional anode. disposed coaxially with an additional anode in close proximity to both said means and said anode; It is meaningful to have a disc with a

In the apparatus of the invention, a sputtering tube having a central hole and coupled to the cathode of each DC source a target, said target being inserted between the electron separation means and the additional anode; It is convenient to enter.

The sputtering target can be placed coaxially with the additional anode.

It is advantageous to form the sputtering target as a disk with a central hole It is.

The additional anode is annular, and the cross-sectional area of the annular anode is equal to that of the sputtering It is preferably equal to or larger than the internal cross-sectional area of the central hole of the target.

The inside of the sputtering target is actually the center of the sputtering target. It can also be designed as a hollow cylinder with holes.

The sputtering targets are isolated from each other and the center of the sputtering target Formed as a set of arcuate plates arranged circumferentially to form a hole. It is desirable that

According to the invention, such an implementation of the proposed method and this implementation of the device implementing said method is provided. Such a configuration allows processing of the product without affecting the initial quality of the surface finish. , thereby maintaining the heating process and product within the set temperature range and thus handling Grinding and polishing of the painted surface is no longer necessary for final operations before coating. coating the product surface as a continuous technology process in the same vacuum chamber. The process capability is compatible with the method and equipment proposed here. Really expand.

Furthermore, the device according to the invention for carrying out the proposed method handles heavy products of long size. The possibility of heating increases the throughput of the proposed treatment method, including products from Enables effective processing of dielectric products.

Brief description of the drawing Below, a detailed description of certain exemplary embodiments of the invention, with reference to the accompanying drawings, is provided. The present invention will be explained by the following description.

FIG. 1 shows a diagram for carrying out the method for treating products in a gas discharge plasma according to the present invention. , is a general schematic diagram of the proposed apparatus for processing products in gas discharge plasma, and the apparatus Shows a longitudinal section of the working chamber of: 2 is a general schematic diagram of an alternative embodiment of the apparatus of FIG. 1; FIG. 3 is a general schematic diagram of an alternative embodiment of the apparatus of FIG. 4 is a general schematic diagram of another embodiment of the device: FIG. 4 is another embodiment of the device of FIG. 3; FIG. FIG. 5 is a general schematic diagram of one embodiment of the apparatus of FIG. FIG. 6 is a general schematic diagram of yet another embodiment of the device of FIG. 1: FIG. is a general schematic diagram of another embodiment of the apparatus shown in FIG. 6; FIG. 9 is a general schematic diagram of one embodiment of the apparatus shown; FIG. FIG. 10 is a general schematic diagram of another embodiment of the apparatus according to FIG. 11 is a general schematic diagram of one embodiment of the device shown in FIG. 12 is a general schematic diagram of an embodiment; FIG. 12 is taken along line XII-XII of FIG. 13 is a cross-sectional view of the embodiment of the device according to the invention shown in FIGS. 1 and 4; FIG. One general schematic diagram is: Figure 14 shows the nitride layer of the processed product as high-speed tool steel obtained by the apparatus of Figure 2. Figure 3 shows a characteristic curve of microhardness versus depth of the layer.

BEST MODE FOR CARRYING OUT THE INVENTION The method of treating products in a gas discharge plasma according to the invention comprises a two-stage vacuum arc discharge between the anode and the integral cold cathode, preheat the product to the working temperature, and Vacuum plasma treatment of the product by maintaining it within a set temperature range in a storage medium It consists of Two-stage vacuum arc radiation initiated between an anode and an integrally cold cathode. The electric current has a metal-gas phase of the plasma and a gas phase of the plasma (gas discharge).

The latter stage separates the working gas from the metal-gas phase of the vacuum arc discharge plasma. This is achieved by the ionization of the working gas by the electrons generated. Acting vacuum arc discharge When starting with an integral cold cathode and anode open in the presence of gas, the interelectrode spacing Pace is formed by the cathode spot of the vacuum arc, metal ions are present metal-gas plasma and the process of recharging metal ions into the interelectrode space. It is filled with gas ions generated from Inducing electron flow in the interelectrode space When separated from the on-stream, the electrons separated from the metal-gas phase of the plasma are The space around the anode is accelerated under the influence of the electric field generated by the node. ionizes the working gas trapped within.

The above space is filled only by the working gas plasma, which does not contain metal ions, All the advantages of vacuum arc discharge are retained, i.e. strong discharge electron current is held.

The magnitude of the electron current that can be obtained in vacuum arc discharge is the lowest stable arc It has a lower limit constrained by the generated current (cathode material and force on the cathode). The arcing current is in the range of 20-200A depending on the method of holding the spot. ). The upper limit of the discharge current is defined by the thermophysical properties of the cooled cathode. It will be done. Cathode-active surfaces must not be heated to temperatures that increase corrosion during operation. Rather, the temperature depends on the melting point of the cathode forming material.

High values of vacuum arc discharge electron current result in a high degree of ionization of the working gas plasma, Therefore, high plasma activity occurs.

In addition, the high value of vacuum arc discharge current is Increasing the heating capacity of the discharge, which is necessary for machining.

Gas discharge plasma is mainly a vacuum arc discharge within the range of 10-2 to 1-OPa. Low working gas pressure (generated in the oven) allows stable continuity of electricity.

The voltage across the discharge electrode is greater than or equal to the working gas pressure above or below the said range. The above pressure range is optimal for stable vacuum arc discharge. are characteristic of the region, the stability of the discharge is adversely affected by current pulsations, and the discharge Naturally suspended over long periods of time.

Vacuum plasma treatment including preheating of the product to the working temperature and maintenance within the set temperature range is preferably used as the working gas in the gas phase of the vacuum arc discharge plasma. The test is carried out in a nitrogen medium.

Vacuum plasma treatment in the gas phase of vacuum arc discharge plasma is based on the direction of accelerated particles. by a chemical beam, especially molecules of gas, such as molecules of argon. , carried out simultaneously with additional processing of the product with a directional beam of neutral particles. accelerated grain dielectric products unless a potential is applied to the product from an external source during processing with Effective treatment of metal products without leaving traces of cathode spots on top Processed under-processing may also be carried out, resulting in substantial deterioration of the initial quality of the surface finish. Prevents 18 scratches on items.

If the initial quality of the surface finish of the product under treatment must be protected or In one embodiment of the proposed method according to the invention, complete or partial rupture of the film coating is carried out. For products with thin coatings where etching of the surface is not permissible due to the risk of damage. In the case of vacuum plasma treatment, the product under treatment is preheated to the working temperature and a positive potential is applied to it. The temperature is maintained within a set temperature range in the C gas discharge plasma by giving

The product under treatment is preheated to the working temperature and maintained within the set temperature range in the gas discharge plasma. During this period, if a positive potential is applied to the product under treatment, the product will be bombarded with electrons.

Sputtering of the impacted surface does not occur due to the low electron mass, so the surface It is generally known that the initial quality of the finish is preserved. cathode and anode The value of the positive potential applied to and equals a score of several volts (generally less than 100V). a The output of the node will be 60% of the total input power given to the discharge. Furthermore, the positive potential There is no tendency for cathode spots to form on the applied product; said spots are produced under treatment. This causes surface corrosion of the product.

A set temperature range that maintains the product under treatment reduces the discharge current to the required level. Therefore, it is maintained. However, due to the stable continuation of the vacuum arc discharge, temperature while reducing to the lowest current value required (generally a score of a few amperes). cannot be maintained at the required level (which has a relatively low weight) in the case of vacuum plasma treatment of products), this implementation of the proposed method is not feasible. It has been proven that.

Where the initial quality of the surface finish of products with relatively low weight has to be protected. If the product to be treated is preheated to the working temperature by supplying a positive potential, the entire area of the product to be treated is heated. The present invention maintains a temperature range within a set temperature range in a gas discharge plasma by a floating potential over Other embodiments of the proposed method according to the invention can be used.

This floating potential is created by a product placed in the plasma that is not powered by an external power source. It is accepted. The product is placed at a potential that causes equal numbers of ions and electrons to enter the product. The self-consistent negative charge is due to the high mobility of electrons (compared to ions).

Continuous or discontinuous positive potential if the product is cooled by disconnection of power supply. The product can be reheated by a suitable supply.

Since the floating potential in the plasma is below the material sputtering limit, the floating negative potential The value of Appropriately high.

Although protection of the initial quality of the surface finish of heavy products is not important, adhesion of the treated product is If it is necessary to improve the properties, the product can be preheated to the working temperature by supplying a positive potential. , the temperature is maintained within the set temperature range by supplying a negative potential. Surfaces resulting from ion bombardment Irregularities and the activity of crystallization nuclei that occur during the maintenance of the product within a set temperature range under negative potential. This process contributes to improving the adhesion of the product.

Products with through-holes, such as sleeves or vibrators, may be subjected to vacuum plasma treatment. The method according to the invention can be carried out in gas discharge plasmas up to including preheating the product and maintaining said product within a set temperature range by supplying a negative potential. , the discharge passes through the holes in the product. When a negative potential is applied to the product, the gas passing through the hole Gas ions are extracted from the gas discharge plasma and impinge on the wall, thus heating it. It is accelerated by

Supplying a negative potential to a product during processing is an arc that is characterized by a rapid current rise and voltage drop. This will result in interruption of electrical discharge. As a result of such an interruption, the product may be exposed to a vacuum arc. It becomes a cathode for discharge, and a cathode spot appears on the surface of the product. All the energy of the vacuum arc discharge generated at the cathode spot is concentrated on the cathode spot. . These spots cause corrosion on the surface of the product during processing and impair the initial quality of the surface finish. deteriorate. To prevent this phenomenon, gas discharge interruptions occur and vacuum arc discharge As soon as the power supply is stopped during the gas phase of the electric plasma, the negative potential is removed from the product. Ru. A two-stage vacuum is used to remove the negative potential from the product to eliminate arc discharge interruptions. This is insufficient under arc discharge conditions.

This means that at the start of an arc discharge interruption to the product and when power is cut off, the unipolar vacuum arc into the gas plasma because it can burn without the supply of electrons from an external source. The fact that this product can last for so long can be explained by Wear. Since the electronic component of plasma has a higher mobility than its ionic component, directly from the gas discharge plasma for sustaining the arc discharge. to the product Due to the electron emission from the cathode spot to the positively charged gas discharge plasma, Electronic withdrawals from the product are made for this purpose.

With the proposed method, the product is not used as a discharge cathode, and a stronger vacuum arc is generated. As long as the ions of the discharge are used, the working cusp formed by the proposed method is The supply of a negative potential to the product during processing in the ZUMA causes a negative potential to be applied to the product during glow discharge. It must be emphasized that this is not the same as supplying a potential.

However, when supplying a positive potential to products with through holes, the discharge does not pass through the holes and the cathode reaches the product edge closest to the surface, solving the problem of obtaining a uniform hardened layer on the hole surface Can not do it.

Therefore, gas ions containing negative potential in vacuum plasma processing of products with through holes are The preheating of the product by means of a heat exchanger is practically stepless.

Maintaining the product within the set temperature range is achieved by appropriately controlling the intensity of the discharge current. Implemented.

Products with through-holes, such as sleeves or pipes, may be subjected to vacuum plasma treatment. In another embodiment of the proposed method according to the invention, the method according to the invention comprises By supplying a negative potential to the upper product, it is possible to maintain the temperature within the set temperature range in the gas discharge plasma. Preheat the product for processing and supply a floating potential to the product to be processed to bring it within the set temperature range. Including maintaining the product.

The process described above, which maintains the treated product by supplying a floating potential, is suitable for applications with a thickness of up to 20 μm. If it is necessary to subject the layer to a high-speed vacuum plasma treatment, especially a chemical heat treatment. It is preferable to carry out the In such cases, the vacuum arc discharge current is level (as in preheating) so that the working gas plasma is at its maximum Shows activity.

In one embodiment of the method according to the invention, the product is preheated to the working temperature and the A floating potential is applied to the product to maintain it within a set temperature range within a gas discharge plasma.

Supplying a floating potential to the product during processing and supplying this potential to the product from an external source is heated by the energy of plasma particles that are not accelerated by plasma The energy given to depends on the working gas pressure, i.e. if this gas pressure is high The higher the value, the greater the amount of energy given to the gas plasma.

When performing vacuum plasma treatment on small products with a diameter of less than 3 mm, The product is preheated to the working temperature and set by supplying a floating potential to said product in a gas discharge plasma. Preferably, it is maintained within a constant temperature range.

In such cases, discharge parameters (i.e. working gas pressure, arc discharge current ) measures the temperature of the product very well, this may be done strictly to the above parameters. That is why it is necessary to stick and thereby observe the temperature of small size products Such observations can be excluded from routine industrial technical processes. poses some difficulties.

Processing when processing small size products, especially cutting tools with sharp cutting lips When supplying a positive or negative potential to the upper product, the overheating of the latter approaches the cutting lip. This occurs due to an increase in the concentration of charged particles, which has its origin in high values of electric field strength. stomach.

In general, apart from the above variations of preheating and maintenance of the product during processing, the product is It is possible to preheat the temperature within the set temperature range by supplying a positive potential and maintain it by applying a positive potential in stages. The product can be preheated by supplying a positive potential and the product can be preheated by supplying a floating potential. Maintain within constant temperature range. The product is preheated by supplying a negative potential to the set temperature. Maintaining the product within the range is carried out by stepwise supply of positive potential: preheating of the product is carried out with negative The product is maintained within the set temperature range by supplying a positive voltage to the product. Preheating of the product is carried out by supplying a floating potential, Maintaining the product within the set temperature range is carried out by supplying a positive potential to the product; The preheating of the product is carried out by supplying a floating potential, and the maintenance of the product within the set temperature range is performed by the above-mentioned Carry out by stepwise supply of positive potential to the product: preheating of the product is carried out by supplying a floating potential. Therefore, maintaining the product within the set temperature range is carried out by supplying a negative potential to the product. Implemented by

All variants for implementing the proposed method according to the invention include preheating of the product to the working temperature. And after the process with maintaining the product within the set temperature range, the gas stage of vacuum arc discharge Including the application of a coating film to the surface of the product.

According to one embodiment of the proposed method, the application of the coating to the surface of the product to be treated is performed using a vacuum application. With the generation of a magnetic field in the gas phase of the arc discharge plasma, the magnetic field lines of this field are It is arranged in a plane perpendicular to the direction of electron flow of the vacuum arc discharge.

The magnetic field generated by this embodiment of the method is applied to the anode-cathode discharge gap. deflects the electron flow that conducts current within the loop in a set direction. As a result, the ion current density increases. In addition, the activity of the plasma and the throughput of the method according to the invention are also enhanced.

In the following, the method according to the invention is carried out to treat a product in a gas discharge plasma. A number of embodiments of the proposed apparatus for this purpose will now be described in detail.

Equipment for processing products in gas discharge plasma according to the invention for implementing the proposed method The housing accommodates an integral cold cathode 2, an anode 3, and a holding fixture 4 for the product to be treated 5. It includes a working chamber 1 (FIG. 1).

Chamber 1 communicates with a source of working gas 6 and has a connection 7, which establishes a vacuum in chamber 1. A pump for evacuating the working space of chamber 1 in the direction of the arrow in order to (Omitted in the drawing as it is not a subject of light).

Both the cathode 2 and the anode 3 are connected via an insulator 8 attached to the wall of the chamber 1. It is coupled to a DC source 9.

The cathode 2 has a seal that establishes a non-active part 11 and a working part 12 of the cathode 2. 10.

The product to be treated 5 is used as the anode 3.

Chamber 1 also contains means 13 for separating electrons from the metal-gas phase of the vacuum arc discharge plasma. This means is arranged in the area of the integral cold cathode 2 and is caused by the integral cold cathode 2. Impermeable to the ions produced.

In this embodiment of the device according to the invention, the means 13 are a set of ■-shaped plates 14. their side 15 faces the cathode 2 and the other side 16 faces the product 5. face

Means 13 divide the internal space of chamber 1 into compartments 17 and 18, The latter compartment serves as a working space for the chamber, while the former compartment serves as an auxiliary compartment. compartment and assists in electron emission into compartment 18.

A thermocouple 19 is held against the product 5 to be treated and a thermocouple attached to one of the walls of the chamber 1 Measurement of the temperature of the processed product 5 which is exposed to the outside of the working (vacuum) chamber 1 via the rim 20 It is connected to a temperature gauge 21 for the purpose of.

Embodiments of the above apparatus according to the present invention utilize the methods disclosed herein for large-sized, heavy-duty In this embodiment, which is advantageously used when applying to bulk products, the product 5 is The set temperature range is set by supplying a positive potential to the product 5, i.e. the anode 3. The amount of heat extracted at the operating temperature when maintained within the The minimum stability exceeds the power generated on the anode 3 at the arcing current.

An embodiment of the device according to the invention for carrying out the method proposed here, shown in FIG. 2 is similar to the device in FIG.

The only difference is that in the apparatus of FIG. The integrated cathode 2 and the electron separation means 13 are arranged so as to be inserted between the a two-way switch connecting the DC source 9 and the anodes j and 22; a control unit 24 for the two-way switch 23; is electrically coupled to thermocouple 19, and its output is mechanically coupled to two-way switch 23. It is about joining. The anode 22 is attached to an insulator 8 mounted on one of the walls of the chamber 1. electrically isolated from chamber 1 by.

In the embodiment of the apparatus for carrying out the method according to the invention described here, the electronic separation means 13 is formed as an iris diaphragm, the movable part 25 of which is arranged along the longitudinal axis of the vacuum chamber 1. are arranged at a spacing “a” from each other in the double band and have /% ends 27; said crank being moved by a crank 25 held together with one of the movable parts 25; The rank exits through a vacuum seal 28 outside the limits of compartment 17 of chamber 1. be done.

Embodiments of the apparatus disclosed herein are suitable for carrying out the method according to the invention, such as when: : Preheat the product 5 and maintain it at a positive potential; Preheat at a positive potential and maintain it. When carried out at floating potential: and when preheating and maintenance are carried out at floating potential.

Furthermore, the embodiment under consideration places the product 5 in the gas phase of a vacuum arc discharge plasma. to maintain the temperature within the set temperature range, and then apply the material of the integral cathode 2 to the surface of the product 5. A method is carried out in which a coating is applied consisting of a compound of a working gas such as nitrogen and a working gas such as nitrogen.

The embodiment of the device according to the invention shown in FIG. 3 is similar to the device of FIGS. 1 and 2.

The difference is that the ■-shaped plate 14 (Fig. 3) of the means 13 is placed against the wall of the chamber 1 according to arrows B and C. The goal is to make a reciprocating motion in the direction shown. For this purpose, chamber 1 has handle 31 through the vacuum seal 32 attached to the wall of the socket 29. 9 is provided with a socket 29 for accommodating a connecting iron 30 that is brought out to the outside. Connection port/ The opposite end of the rod 30 is fixed together with the plate 14. The device proposed here Embodiments include metal and working gas which subsequently produce an integral cathode 2 on the surface of the product. By applying a wear-resistant coating consisting of a compound with nitrogen, Plasma treatment, especially when used to increase the wear resistance of products that have undergone chemical heat treatment. The greatest utility can be found when As far as processing methods are concerned, the equipment The embodiment does not differ from the previous embodiment shown in FIG.

The embodiment of the apparatus for carrying out the method according to the invention shown in FIG. 4 is similar to the apparatus of FIG. The same is true.

The only difference from the previous embodiment is that the electronic separation means 13 (FIG. 4) is a louvered board. The slate 33 is provided with a handle 35 and is attached to one of the walls of the chamber 1. of the compartment 17 of the working space of chamber 1 through the closed vacuum seal 36. It is coupled to a connecting rod 34 that is taken out to the outside.

The device in question comprises another direct current source 37, the cathode of which is connected to the product via a switch 38. 5 and its anode is connected to chamber 1.

This embodiment of the device carries out the method according to the invention and applies a positive potential to the product 5. If the product 5 is preheated and maintained within the set temperature range by supplying a negative potential; When preheating and maintaining by supplying a potential; the product 5 is preheated by a negative potential and When maintaining by supplying potential in stages; preheating and maintaining product 5 by supplying negative potential If carried out by: preheating is carried out by a negative potential and maintenance is carried out by a positive potential to the product 5. If carried out by supplying: heating is carried out by a negative potential and maintenance is carried out by supplying product 5 When carried out by supplying a floating potential; preheating is carried out by floating potential and maintenance is carried out. If carried out by supplying a positive potential to the product 5: and if preheating is carried out by means of a floating potential. Applicable when application and maintenance are performed by supplying a negative potential to the product 5. .

Furthermore, this embodiment of the device is suitable for manufacturing through vacuum plasma treatment, especially chemical heat treatment. material of the cathode 2 or the material and said material with a working gas, i.e. nitrogen. Applying an abrasion-resistant coating made of a chemical compound to increase the abrasion resistance of the product. If so, implement the proposed method.

The embodiment of the apparatus for carrying out the method according to the invention shown in FIG. 5 is similar to the apparatus of FIG. The same is true.

The only difference from the previous embodiment is that the electron separation means 13 (FIG. 5) is an L-shaped branch 39. the end 40 of which communicates with the chamber 1 and faces the anode 3; A node 2 is present in close proximity to the end 111 of said branch 39, and said cathode The active part 12 of 2 is a direct optical view of the inner wall 12 of chamber 1. placed outside the area of

The device of FIG. 5 preloads the product 5 by supplying a positive potential to the product 5 to provide power. Implement the method proposed here to heat and maintain within the set temperature range.

However, an embodiment of the device with means 13 formed as an I-shaped branch 39 Figure 2. 3. 4, as described above and shown in FIG. 3. Fixed to the equipment described in 4. It can be used in equipment for performing vacuum plasma processing using existing process technology. It is clear that there is.

Another embodiment of an apparatus for carrying out the methods disclosed herein is shown in FIG.

FIG. 6 shows an embodiment of an apparatus for carrying out the method according to the invention which is similar to the apparatus of FIG. Similar 3゜ The only difference is that the wall 43 of the vacuum chamber 1 itself is used as the electron separation means 13 (Fig. 6). , said wall is in the area of the monolithic cathode 2, and the monolithic cathode 2 is in its active part. ] 12 is arranged so as to face the wall 43.

The device shown in FIG. 6 preheats the product 5 by supplying a positive potential to the product 5 and Implement the method proposed here to maintain within a constant temperature range.

However, the monolithic cathode 2 has its active part 12 opposed to the anode 3. An embodiment in which the corresponding wall of the chamber 1 serves as the means 13 is shown in FIGS. It is also applicable to other devices.

The other embodiments of the device shown in FIG. 7 are the same as the device of FIG.

The only difference is that the monolithic cathode 2 (Fig. 7) has its active part 12 shown in dotted lines in Fig. 7. It is arranged so that it can be angularly displaced through 180° with respect to the wall 43. It is true.

The device shown in Figure 7 preheats the product 5 by supplying a positive potential and Other embodiments of the apparatus shown in FIG. 8 for carrying out the method proposed herein The configuration is the same as the device in FIGS. 1 and 4.

The only difference is that the r node 22 (1m8) has its end 45 facing the cathode 2 The inside 46 of the hollow cylinder 44 is formed as a cylinder 4, 4. , for housing a processing product 47 which is considered to be a rod held in a fixture 48. be.

The cylinder 44 is surrounded by a solenoid 49 located outside the chamber 1. center A disc 50 with holes 51 is housed in the chamber 1 and is connected to the ■-shaped brakes 1 and 1 of the means 13. 4 and end 45 of cylinder 44 in close proximity to both, cylinder 44 is placed coaxially with.

The above equipment is used to enhance the vacuum plasma processing method and also to act on the processing product 47. in the gas discharge plasma by preheating to a temperature and supplying a floating potential to the product 47. to maintain within the set temperature range, as well as by positive potential and floating potential respectively. , disclosed herein for preheating the product 47 to the working temperature and maintaining it within the set temperature range. It can be used to implement the method. In both of the above cases, product 47 must be maintained. Preferably, the set temperature is maintained by stepwise application of a positive potential.

The device of FIG. 9 is the same as the device of FIG.

The only difference is that the sputtering target 52 (FIG. 9) has a central hole 53. , said target between the plate 14 of the means J3 and the end 45 of the cylinder 44. and is arranged coaxially with the disk 49 and the cylinder 44.

The sputtering target 52 in this embodiment of the apparatus actually has a central hole 5 3. The disc 54 has a number of discs.

The sputtering target 52 is passed through an insulator 56 attached to the wall 3 of the chamber. It is coupled to the cathode of each DC source 55 and has a sputtering surface 57 .

Embodiments of the above apparatus are used to enhance vacuum plasma processing methods and to process products. Gas discharge by preheating the product 47 to the working temperature and supplying a floating potential to the product 47 The product 47 is maintained within the set temperature range in the plasma by field b1 and a positive potential. when maintaining said product by preheating it to the working temperature and supplying a floating potential. The proposed method is reasonable to implement.

Additionally, the device embodiments under consideration may undergo vacuum plasma treatment, in particular chemical heat treatment. The wear resistance of the sputtered product was then evaluated using the gold used to actually manufacture sputtering Couget 52. By applying a wear-resistant coating consisting of metal and a working gas, such as nitrogen, It can be used to store images.

The apparatus in Figure 10 (8 is the same as the apparatus in Figure 9; the only difference is the sputtering The target 52 (FIG. 10) is formed as a hollow cylinder 58 and the anode 22 is attached to the ring. 59, the electron separating means 13 is formed at a gap "b" with respect to the wall 61 of the vacuum chamber 1. It is formed as a disk 60 arranged so as to maintain the same. Internal space of ring 59 The pace 62 and the internal space 63 of the cylinder 58 are equal in cross-sectional area.

For processing purposes, the holding fixture 48 for the product 47 is present in the internal space 63 of the cylinder 58. do. Disc 60 has a gap "C" with respect to end 64 of cylinder 58.

The internal space 63 of the cylinder 58 is actually a tarpaulin with a sputtering surface 57. This is the center hole 53 of the target 52.

The above embodiment of the apparatus is suitable for the product 47 after passing through a vacuum plasma treatment, in particular a chemical heat treatment. A wear-resistant coating made of the material from which the sputtering target 52 is made is applied to the sputtering target 52. Preferably used to intensify the process.

The process technology involved in vacuum plasma treatment, i.e. preheating and setting temperature of the product during treatment. As far as maintenance within the temperature range is concerned, this embodiment of the device is the same as the previous embodiment. be.

Apparatus according to the invention for implementing the method disclosed herein and illustrated in FIGS. 11 and 12 is the same as the device in FIG.

The only difference is that the sputtering target 52 (FIGS. 11 and 12) is are insulated from each other and arranged circumferentially as shown in FIG. Establishing the center hole 53 of the sputtering target 52 with the sputtering surface 57 It is formed as a set of arch-shaped plates 66.

In the above embodiment of the device, the cross-sectional area of the internal space 62 (FIG. 11) of the ring 59 is It is larger than the cross-sectional area of the center hole 53 of the cutting target 52.

This embodiment of the apparatus provides that such configuration of targets 52 The risk of arc discharge hitting the surface is greatly reduced (reducing the risk of arc discharge impacting the surface). Used to obtain high quality hard coatings as it eliminates drop phase formation That is reasonable.

The device shown in FIG. 13 is the same as that of FIGS. 1 and 14.

The only difference is that the apparatus of FIG. 13 is equipped with an accelerated particle source 67; 67 is connected to the vacuum chamber 1, a hollow cooling power sword 69, an anode 70, a gas discharge chamber 68 a gas discharge chamber 68 accommodating power supply means 71 for a discharge initiated in said means; 71 is an accelerating electrode having a cathode 69, an anode 70 and a cathode coupled to the vacuum chamber 1; It is coupled to pressure means 72 . Source 67 is an emissive grid coupled to the cathode of power source means 74. A power supply means 74 is coupled to the means 72.

This embodiment of the apparatus is primarily used for vacuum plasma production of products manufactured from dielectric materials. With a view to enhancing the efficiency of the treatment process, the product 5 can be pre-empted by supplying a floating potential. Preferably used for heat and maintenance.

This method for treating products in a gas discharge plasma carrying out the method according to the invention The mode of operation of the device disclosed here is as follows: through the connection 7 the pump (as shown) (without) so that the pressure established in vacuum chamber 1 is approximately an order of magnitude lower than the working pressure. Vacuum chamber 1 is evacuated until Once chamber 1 is evacuated, the working gas is Add until full. This is followed by industrial conditions when nitrogen is used as working gas. The method disclosed herein is applied to the most commonly used nitriding processes under Certain implementations are contemplated. In this particular case, nitrogen is supplied from the working gas source 6. The pressure is set within the range of 10-2 and 10 Pa.

A voltage is applied to the anode 3 and the integrated cathode 2 from a DC source 9. Then the vacuum Arc discharge initiation system (combined) is known and is not subject to the present invention, so it is not shown in the drawing. (omitted) initiates a cathode spot on the cathode 2.

The cathode spot started in this way moves over the active part 12 of the cathode 2. However, the cathode spot cannot move over the non-active part 11 of the cathode 2. No, the reason for this is that the entire non-active part 11 of the cathode 2 is insulated from the cathode 2, Breaking the electrical connection between cathode 2 and anode 3 through the plasma column This is because it is covered by the shield 10.

The plasma column produced by the cathode spot is the cathode of vacuum arc discharge. It is ionized in the region near the cathode 2 and transmitted from the cathode 2 along a straight path at high speed. The disseminating metal ions (i.e. corrosion products of the material from which the cathode 2 is made) and the electrical Consists of children. Plasma columns combine neutral working gas molecules with metal into a pond of metal ions. contains working gas ions resulting from the refilling process upon impact with the Metal ion force ( The electrons are propagated along a straight path, and the electron separation means 13 is separated between the cathode 2 and the anode 3. As long as the metal ions are inserted, they will be blocked by the ■-shaped plate 14 and will be directed to υ)-L. Condense. The metal gas plasma passes through the gap between the V-shaped plates 14 of the means 13. Electrons (activated by the electric field of the anode 3, in the chamber 1 containing the metal scum plasma) Continuing from the con/compartment 17 to the compartment 18 of room 1, (-Ionizes the working gas contained in the Establish a gas plasma that can pass through.

Thus, the means 13 essentially cover two physically different areas, namely the controller of the chamber 1. Metal gas plasma region filling part 17 and compartment 1 of chamber 1 8 is the boundary between the pure gas plasma region and the filling region.

The characteristic feature of vacuum arc discharge is that the electron flow power of such discharge is This results in the fact that it is limited only to the thermophysical properties of 2. Several hundred amperes (or several thousand) The generation of a vacuum arc discharge current as large as an ampere can be easily achieved. 6<Generally known. At such high values of current strength, the funnocouple in chamber 1 The gaseous plasma in the chamber 18 has a high degree of ionization (on the order of several tens of percent) and therefore It is characterized by high L1 activity.

The surface of the anode 3, i.e. the processing product 5, is exposed to the effects of electron bombardment to which this surface is subjected. and heated. The surface temperature is monitored by a thermocouple 191 fixed to the product 5. It will be done. Once the working temperature of the product 5 has been reached, the intensity of the discharge current is changed to the anode 3. Up( 2) The amount of heat extracted from the product 5 by the generated electricity (double edge of heat radiation and heat transfer), etc. lower it to a value that makes it more accurate. At such current (L), product 5 (set temperature During this period, the surface layer of the product 5 is saturated with the working gas. , i.e. vacuum braz? A treatment, in particular a chemical heat treatment, is carried out. vacuum arc father The lower limit of current is such that such a discharge can be maintained stably, and below that, the discharge power is less than uneasy. Cathode 2 made from a variety of materials So, this kind of current (on the order of several tens of amperes) is for this reason. The equipment that is actually the second product (structural 1.: the most part) is Relatively durable, characterized by the hot oil 14j speed at 0 and force A; ``This is the ciJ capacity applicable to vacuum plasma processing of products. The implementation of the plasma treatment ensures that electron collisions on the surface of product 5 do not cause surface sputtering. Therefore, product 5 that has undergone such vacuum plasma treatment has an initial surface finish. This is advantageous in terms of protecting quality. Vacuum plasma treatment, especially chemical heat treatment, ion Partially or completely destroyed by negative potential impact (i.e. under negative potential supply to the product) When applied to products coated with thin film coatings, such as This is very important.

In the apparatus for carrying out the method according to the invention, shown in FIG. 2, a positive potential and a floating potential are used. The device maintains the product 5 within the set temperature range in both cases, but the device does not impose any limitations on the implementation of the processing of the product, regardless of the

The device is operated as follows.

A positive potential supplied from a DC source 9 is applied to preheat the product 5. 2 way switch 23 is in the 1 position, and as soon as the temperature of the product 5 reaches the set temperature 7, the control unit I・2 4 shifts the two-way switch 23 to position 11, in which position the discharge anode is Actually the anode 22, the product 5 is under a floating potential. Discharge from Ahad 3 After reaching the anode 22, the vacuum arc discharge current retains its initial value, so the The discharge plasma retains its activity at an unchanged level. This invention The configuration of Figure 1 allows the configuration of the device to be quite comparable to that shown in Figure 1. Temperature control of product 5 is difficult due to reduced flow and reduced throughput of vacuum plasma processing. It will be done.

The device of FIG. 2 is applied similarly to the device of FIG. 1 with the two-way switch 23 in position 1. be able to. .

The graph shown in Figure 4 shows the vacuum plasma processing performed using the apparatus shown in Figure 2. Demonstrate process efficiency.

A product 5 made of high speed tool steel having the following chemical analysis values (% by weight) is subjected to nitriding.

W, 6. 1; C, 0, 8, No, 5. 1: Cr, 4.　O,;Va,],8 ;Remaining Fe.

Product 5 is pre-MLed by supplying a positive potential, and set temperature is set by a combination of positive potential and floating potential. Maintain the degree of control. Measure the temperature of product 5 from position 1 of 2-way switch 23. It can be maintained by switching In/\ or vice versa. 1 true′η“plasma treatment, treatment , the process parameters for chemical heat treatment in this specific case are as follows: ・Nitrogen Partial pressure 8xlO-2Pa; vacuum arc discharge current 120A, anodes 3, 22 and capacitor Voltage between Sword 2.

60V: 400°C maintenance period, 35 minutes; 500°C maintenance period, 35 minutes.

The graph shown in Figure 4 shows the microhardness Hu of the nitrided layer in mPa (plotted against the X-axis). ) vs. layer depth “h” in microns (two temperatures i.e. 400°C (curve “d”) and 500° C. (plotted against the Y-axis for curve “e”).

The device of Figure 2 is small in size when preheating and maintenance are carried out by supplying a floating potential to the product 5. It is preferable to use it for vacuum plasma treatment of sized products. In this case, the two-way switch 23 is in the 11th position, and the vacuum arc discharge parameters (i.e., current value and voltage value) is selected so that the temperature of product 5 does not exceed the value set by the processing method. Ru.

By this method of preheating the product and maintaining it within the set temperature range, the temperature of the product By keeping the vacuum arc discharge parameters constant at the required level, temperature control can be maintained with an accuracy that is very suitable for industrial implementation. control measures can be made unnecessary.

In the apparatus of Figure 3, the cathode 2 is a wear-resistant metal-containing compound during chemical reaction with the working gas. For example, the cathode 2 is made from a material that forms an object, for example cathode 2, upon reaction with nitrogen. Manufactured from titanium, which forms a stable wear-resistant compound, titanium nitride.

Vacuum plasma treatment of product 5 by one of the above embodiments of the method disclosed herein After implementation, it is formed as a set of ■-shaped plates 11 fixed to the connecting rod 30. raised means 13 by means of handle 31 to socket 29. As a result, the Due to the processing of the metal ions generated by the sword 2, it is difficult to reach the surface of the product 5 without being disturbed. A new flight will take place. In this way, vacuum plasma treatment, especially chemical heat treatment During the process, the surface of the product 5 is exposed to a resistant material in the presence of a working gas, namely nitrogen. A thin film layer of an abrasive titanium nitride compound is formed.

The following chemical analysis values (wt%): W, 6. 1; C, 0, 8, Mo, 5.　1　 ;Cr.

4, Q,; Va, 1. 8; Whole cutting tool made of high speed tool steel with remaining Fe The main treatments include nitriding to form a nitride layer with a thickness of 15 to 25 m, followed by coating of a 4 μm thick wear-resistant titanium nitride layer and passed only through chemical heat treatment. Strengthens the wear resistance of tools by 150-300% compared to cutting tools.

In the apparatus shown in FIG. 4, the DC source 37 supplies a negative potential to control the set temperature range of the product during processing. Allows for maintenance within. For this, a preheating process of the product 5 by supplying a positive potential When the discharge is completed, the two-way switch 23 is switched to the 11th position, that is, the discharge is stopped. Transferred from the anode 3 to the anode 22, the holding fixture 4 for the product to be treated is switched 38 connects to the direct current [38. As a result, a high voltage negative potential is applied to the product 5. The ions of the gas plasma are accelerated toward the surface of the product 5, and the ions are accelerated toward the surface of the product 5. Carry out empty plasma treatment, especially chemical heat treatment.

The following examples illustrate the methods disclosed herein performed in the apparatus of FIG. The advantages of this are illustrated.

The surface of product 5 is nitrided. That is, a tool including a coating film is provided. This way The nitriding procedure is carried out through the coating described above. Base metal of the tool, i.e. high speed This is because the adhesion of the titanium nitride layer to the tool steel is the best.

Many products 5, ie chips of high speed tool steel for cutting tools, are nitrided.

The chemical composition of the high-speed tool steel is W6. 1. C0, 8, Mo 5 ゜1, Cr 4. 0. Va 1. 8 and the remainder consists of Fe.

In the apparatus of Figure 4, the chip under treatment is coated with a 4 um thick layer of titanium nitride in front of it. Ru. The coating allows metal ions generated by the monolithic cathode 2 to be removed from the surface of the product 5 during processing. The louvered board slats measure open to allow free access to the surface. 13 and apply it. Then, close the slat means 13 of the louver board, A total of 10 chips 20 were preheated at a positive potential and exposed to a chemical heat treatment. The set temperature is maintained by a combined supply with a floating positive potential. Processing parameters is as follows. That is, working gas partial pressure 8X10-2Pa, vacuum arc Discharge current: 1.20A, voltage between anode 3.22 and cathode 2: 60V, The temperature of the chip under treatment was 500°C, and the nitriding time was 40 minutes. outside lot chips 20 is also preheated at a positive potential and exposed to chemical heat treatment, and a negative potential is applied to the product during the process. and maintain the set temperature by The processing parameters are as follows. i.e. , working gas partial pressure 8X10-2Pa, vacuum arc discharge current 60A, anode 2 Voltage between 2 and cathode 2: 60V, temperature of chip under treatment: 500°C, source 37 The negative voltage supplied to the chip was 800 V, and the nitriding time was 40 minutes. two lo Visual inspection of the chips from the second lot reveals that the cutting edges of the chips from the second lot are nitrided. The concentration of ion flow at the cutting edge results in cathodic sputtering of the tan layer. It was found that the titanium nitride coating film was chipped up to 2 mm by weight percentage, and C 0.36°Si 0. 2. Mn 0. 5. Cr 1. Including 1 and the rest Used in the process of turning steel with chemical composition consisting of Fe according to the following cutting speed and feed: It was tested.

-Cutting speed 60m/min -Feeding speed 0.63mm/rev -Cutting depth 1mm Compared to the first one, the lofted tip treated with a combination of positive and negative potentials. The average abrasion resistance (durability) increases by 6.7 times. On the other hand, the chip treated with negative potential The wear resistance of is increased by 2.3 times.

According to the examples cited above, routine procedures involving the application of a negative potential to the processing product It is clear that chemical heat treatment of products with thin films using .

In the apparatus of Fig. 4, product 5, i.e., a drill with a diameter of 1.8 mm, is hardened and floated. This was done by applying a potential to it. A total of 50 drills were used. Ru. The drill is clamped with a holding fixture 4 and nitrided with the following process parameters: . In other words, nitrogen partial pressure: 6.5x10-IPa, discharge current: 120A, product temperature: degree 500℃, time to preheat the drill to 480℃ under floating potential 12 minutes, 48 Holding time at 0°C is 12 minutes.

The drill treated in this way had a weight percentage of CO, 36, SiO, 2°Mn 0. 5. Cr 1. 1 and the balance is Fe as follows: Holes were drilled and tested under treatment conditions.

- Drill spindle speed 8430 rpm - feed per revolution of the drill spindle Length 0.043mm - Drill depth = 1mm The average increase in drill wear resistance is 180%.

In the apparatus of FIG. 5, at the beginning of the vacuum arc discharge between the cathode 2 and the anode 3, Therefore, the metal ions generated and propagating from the active area 12 of the cathode 2 along a straight path does not enter the compartment 18 of the interior space of the chamber 1.

In the apparatus of Figure 6, the ion flow of the metal-gas plasma is equal to 180°, with the cathode does not exceed the limit of a solid angle with its vertex at the center of code 2. Therefore, metals Theoretically, there is no difference in product number 5.

In the apparatus shown in Figure 7, the vacuum-plasma treatment of the product is performed in the area indicated by the dotted line in Figure 7. This is carried out at cathode 2 assuming that Using cathode 2 in such a position, Bound the application of the cured coating of cathode material by a solid angle of 1800 be carried out reasonably efficiently in a limited internal space.

In the apparatus of FIG. 8, the electric field is normally directed along its axis in the interior 46 of the hollow cylinder Let's go. An end 45 is directed towards the integral cathode 2 (acting as anode 22). ) This is because there is a disk 50 with a central hole 51 of the hollow cylinder 44. . A solenoid 49 surrounding the anode produces an axially symmetrical magnetic field.

Therefore, the electric and magnetic fields inside 46 of hollow cylinder 44 are oriented at right angles to each other. Ru.

A gas plasma placed in a radial electric field and an axial magnetic field that cross each other. It is common knowledge that an azimuthal electron Hall current is generated. electronic pass An electron hole current with an extended lifetime appears, thereby increasing the ionization capacity of electrons. This is because the amount increases and, as a result, the degree of plasma ionization of the gas increases.

This increase in plasma ionization has the following serious consequences.

- Increased activity of gas plasma leading to enhanced vacuum plasma treatment process Performed by supplying a floating potential when preheating the product under treatment and maintaining it at the set temperature Vacuum arc discharge into a gas plasma increases the heating capacity available for an increase in the proportion of electrical energy transferred from

In the apparatus of FIG. 8, W6.1. C018, Mo 5. 1. Cr4, 0. Made of high-speed tool steel with a chemical composition of Va 1.8 and the remainder Fe. The resulting product 47 was nitrided using two different methods.

According to a first variant, the product 47 is nitrided with an electrically interrupted solenoid 49.

In other words, the nitriding procedure is no different from that carried out in the apparatus shown in Figure 1 to 7. .

The parameters of the nitriding process are as follows. In other words, the nitrogen partial pressure is 1.33 XIO-'Pa% Vacuum arc discharge current 60A1 Solenoid 49 current is cathode 15um of nitrogen such as to establish a voltage of 80V between the node 2 and the anode 22. The time for forming the layer was 12 minutes.

Therefore, in the presence of crossed electric and magnetic fields of the gas discharge plasma in the apparatus of Figure 8, Enhance vacuum plasma treatment procedures.

The device of FIG. 9 has all the advantages afforded by the device of FIG. Applying abrasive coatings to surfaces treated with vacuum plasma, especially chemical heat treated products. Improved processing capacity. For this purpose, the sputtering target 52 (Disk 54) is made of metal with an applied wear-resistant coating. high voltage When a negative potential is applied to the sputtering target 52, the gas discharge plasma The sputtering surface 57 facing toward the surface is sputtered by ion bombardment. Ringed. The sputtered material is deposited onto the product 47 to form a wear-resistant coating. Forms a film. When applying such coatings, argon is used as the working gas. and nitrogen.

Therefore, the apparatus of FIG. 9 is used to perform chemical heat treatment and then increase the wear resistance of the product 47. A post-curing treatment can be carried out in which a cured coating film is applied.

The device in Figure 10 applies a coating film to products that have undergone vacuum plasma treatment, especially chemical heat treatment. The process of Furthermore, a more uniform application of the coating in terms of thickness is achieved. purpose can be achieved.

In a specific embodiment of the apparatus, the positive column of vacuum arc discharge plasma is in series. runs along the interior surface of the conductor 58; The cross-sectional area of the discharge is / along the liner 58 It is almost the same across all busways. At this time, cover the entire length of the cylinder. A constant ion current density is provided thereon. Therefore, a homogeneous coating film with 7 phosphorus A long product 47 located in the internal space 63 of the goo 58 is secured for a long time.

The processing method carried out in the embodiment of this apparatus disclosed herein includes the following parameters: Features a meter. That is, the partial pressure of argon in the room is 1.5X10-2Pa.

Discharge current: 100 A, voltage between anode and cathode: 2.45 V, target The voltage on the circuit is 1ooov, and the current in the circuit of target 52 is 14A.

The speed of application of the titanium coating film to product 47, which is 50 mm 1ll from target 52, is , located lower in the target 52 when viewed in the direction of plasma electron flow. Regarding product 47, it is 3.2 um/h.

Regarding the product 47 placed at the center position of the target 52, it is 3.7 um/h. .

lowered to a higher position than target 52 when viewed in the direction of plasma electron flow. Regarding product 47, it is 3 um/h.

Therefore, the maximum coverage of foreign matter along the axis of the product is 19%.

The apparatus of FIGS. 11 and 12 is designed for use with products 47 subjected to vacuum plasma treatment, in particular chemical heat treatment. - Suitable for implementing and enhancing the process of coating application. This is the target 52 for the prescribed exclusion of the onset of the drop phase during sputtering. In terms of thickness, it is possible to increase the amount of coating applied. This is the figure 12 is given by the arrangement of the target 52 configuration shown in FIG. each other By using a target 52 in the form of an insulated arched plate 66, its surface Reduces the risk of arcing and consequent spatter on the target 52. Eliminates the possibility of metal drops appearing between rings.

Otherwise, the operation of the apparatus of FIGS. 11 and 12 is similar to that of FIG.

The apparatus shown in Figure 13 is suitable for applying vacuum plasma treatment, particularly to coatings on products that have undergone chemical heat treatment. It is possible to implement and strengthen the application process. And the coating film applied It is also possible to add adhesion.

An accelerated beam from source 67 is used to clean, activate and preheat the surface. The process is directed onto the surface of the product 5. The beam has accelerated particles across its cross section. The bundles are characterized by a high uniform density. As a result, the surface of product 5 clean and heat it additionally. This improves the quality of subsequent coatings. let it go up

In addition, the discharge becomes neutral on the surface of the dielectric product due to the electrons from the vacuum arc discharge plasma. a beam of positive ions and/or a beam of fast neutral molecules from the ion re-discharge. The dielectric product is cleaned and preheated using a vacuum cleaner.

The presently disclosed technology of gas discharge plasma products carried out by the apparatus according to the invention A wide range of different embodiments for co-processing methods can be used to process products under large-scale industrial conditions. The coating film is cured by strong vacuum plasma treatment followed by reduced pressure (10210Pa). can be applied.

In the apparatus disclosed herein for carrying out the method according to the invention, the product is efficiently processed. heated and its temperature maintained within a set range while applying a positive or floating potential to it be done. Electron bombardment on the surface of the product during processing does not affect the processing quality of the surface finish. stomach. That is, vacuum plasma treatment under a positive potential can cause grinding and It does not further include technical procedures such as polishing.

The powerful nature of vacuum plasma processing under floating potential without applying voltage to the processing product The possibility of implementing the method is limited to small-sized products such as drills with a diameter of less than 3 mm. The application of voltage to the product during processing, which is very important in the processing of products, The temperature measurement process is directly interrupted due to the increased concentration of charged particles impacting the surface of the difficult to perform first and avoid annealing of sharp edges on the product. In some cases, it is possible to carry out the method without temperature monitoring of the processing product. Positive When carrying out the method of vacuum plasma treatment under potential, the treated product, i.e. Eliminates the risk of arcing occurring on the surface of the product where the cathode spot is initiated. It can be removed. This is ultimately the method of vacuum process treatment of the cathode on the surface of the product. This allows implementation at an optimal rate independent of the risk of spot initiation.

The spots are responsible for erosion of the surface. Therefore, vacuum plasma The time required to implement the treatment method is reduced. Vacuum arc discharge cathode spot Because there is no longer a need to gradually preheat the product during processing due to fear of starting .

- Polar arcs occur on the surface of a product under the application of a floating potential to the product It should be noted that this is a possibility. However, the appearance of such an arc is much less likely than for high voltage negative potentials. according to the disclosed method. The durability of cutting tools treated with this method is substantially increased. For example, difficult to machine 200-600% for tools used to turn steel, and 200-600% for drills. For 1000% cutting, the hob increases by less than 300%.

The apparatus implementing the method disclosed herein is characterized by high reliability.

The monolithic cathode is heated to 300-400'C.

Moreover, the equipment used to carry out the methods disclosed herein has a high degree of ionization. It is characterized by its high resistance to chemical activity, thereby making it harden during the formation of the surface layer. This makes it possible to generate gaseous plasma that can be used for short periods of time.

The equipment used to carry out the methods disclosed herein must be preheated, cleaned and In addition to carrying out thermal treatment steps, electrons are used to initiate gas discharge plasmas. A monolithic cathode of a vacuum arc discharge intended for the emission of a thin film coated vaporizer Thin film coating processes are also carried out as it can act as a source of possible metals. can be done. The method is carried out in the same pressure range of the working gas. for example, As a result of all the processing, such as cutting tools, their durability is reduced by 150-300%. increase

Industrial applicability Used in gas discharge plasma to carry out the processing method of products under gas discharge plasma Product processing equipment to harden mechanical elements to increase their wear resistance For mechanical industry, turning tools, milling cutters, bob, drills, broaches, dies Tool manufacturing industry for various cutting tools such as st. It can find use in the chemical industry, where equipment is manufactured.

f/ffi, 8 Froll FIU, 12 Continuation of front page (31) Priority claim number 5002528 (32) Priority mill September 11, 1991 Japan (33) Priority claim country: Soviet Union (SU) (81) Designated countries EP (AT, BE, CH, DE.

DK, ES, FR, GB, GR, IT, LU, MC, NL, SE), C3, H U, JP, KR, PL, US (72) Inventors Grigoriev, Sergey Ni Karaevich Russian Federation 103055. Moscow, Vackovsky Pull 18-209 (72) Inventor Methyl, Alexander Sergeevich Russian Federation 143,500. Moskovskaya Oblu, Istra, Ur Lenini 1-

Claims (1)

[Claims] 1. initiation of a vacuum arc discharge between the anode (3) and the integral cold cathode (2); subjecting the product under treatment (5) to a primary preheating up to the working temperature and at a set temperature in the working gas medium; vacuum plasma treatment of the product by maintaining the product (5) within the range of between the metal-gas phase of the plasma and the gas phase of the plasma (i.e. A two-stage vacuum arc discharge characterized by A method characterized in that the two phases are isolated from each other and the latter phase is established by ionization of the working gas by electrons separated from the metal-gas phase of the vacuum arc discharge plasma. 2. Vacuum arc discharge plasma at low working gas pressure in the range of 10-2 to 10 Pa A method according to claim 1, characterized in that the method is formed in a. 3. Subject the product (5) to the main preheating to the working temperature and maintain the product within the set temperature range. Vacuum plasma treatment of the product (5) by holding the vacuum arc discharge plasma gas The method according to claim 1 or 2, characterized in that it is carried out in a step. 4. While the product under treatment (5) is subjected to main preheating, it is further subjected to a directional acceleration beam. 4. The method according to claim 3, wherein the method comprises: 5. 5. A method according to claim 1, characterized in that nitrogen is used as the working gas. 6. 4. Process according to claim 3, characterized in that nitrogen is used as working gas. 7. The main preheating of the product (5) under treatment to the working temperature supplies the product (5) with a positive potential. The method according to claim 1 or 2 or 4, characterized in that it is carried out by. 8. The main preheating of the product (5) under treatment to the working temperature supplies the product (5) with a positive potential. 4. A method according to claim 3, characterized in that it is carried out by: 9. The main preheating of the product (5) under treatment to the working temperature supplies the product (5) with a positive potential. 6. A method according to claim 5, characterized in that it is carried out by: 10. 5. The method according to claim 1 or 2 or 4, characterized in that the primary preheating of the product (5) to the working temperature is carried out by supplying the product (5) with a negative potential. Law. 11. 4. Process according to claim 3, characterized in that the primary preheating of the product (5) to the working temperature is carried out by supplying the product (5) with a negative potential. 12. 6. Process according to claim 5, characterized in that the main preheating of the product (5) to the working temperature is carried out by supplying the product (5) with a negative potential. 13. The primary preheating of the product (5) under treatment to the working temperature provides the product (5) with a floating potential. 5. The method according to claim 1, characterized in that the method is carried out by supplying the gas and is initiated by a gas-phase plasma of a vacuum arc discharge. 14. The primary preheating of the product (5) under treatment to the working temperature provides the product (5) with a floating potential. 4. The method as claimed in claim 3, characterized in that the method is carried out by supplying the gas and is initiated by a gas phase plasma of a vacuum arc discharge. 15. The primary preheating of the product (5) under treatment to the working temperature provides the product (5) with a floating potential. 6. The method as claimed in claim 5, characterized in that it is carried out by supplying the plasma and is initiated by a gas phase plasma of a vacuum arc discharge. 16. It is characterized by using a directional beam of neutral particles as a directional accelerated beam. The method according to claim 4 or 6 or 8 or 9 or 11 or 12 or 14 or 15. 17. It is characterized by using a directional beam of neutral particles as a directional accelerated beam. 6. The method according to claim 5. 18. It is characterized by using a directional beam of neutral particles as a directional accelerated beam. 8. The method according to claim 7. 19. It is characterized by using a directional beam of neutral particles as a directional accelerated beam. 11. The method according to claim 10. 20. It is characterized by using a directional beam of neutral particles as a directional accelerated beam. 14. The method according to claim 13. 21. Claim 1 or 2 or 4 or 6 or 8 or 9 or 11 or 12 or 14 or 15 or 17, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. or the method described in 18 or 19 or 20. 22. 4. Method according to claim 3, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 23. 6. Process according to claim 5, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 24. 8. Method according to claim 7, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 25. 11. Method according to claim 10, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 26. 14. Method according to claim 13, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 27. 17. Method according to claim 16, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a positive potential. 28. 22. Method according to claim 21, characterized in that the product under treatment (5) is supplied with a positive potential in stages. 29. 28. A method according to any one of claims 2 to 27, characterized in that the product under treatment (5) is supplied with a positive potential in stages. 30. Claim 1 or 2 or 4 or 6 or 8 or 9 or 11 or 12 or 14 or 15 or 17, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. or the method described in 18 or 19 or 20. 31. 4. Method according to claim 3, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 32. 6. Method according to claim 5, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 33. 8. Method according to claim 7, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 34. 11. Method according to claim 10, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 35. 14. Method according to claim 13, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 36. 17. Method according to claim 16, characterized in that the product under treatment (5) is maintained within a set temperature range by supplying it with a negative potential. 37. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. Claim 1 or 2 or 3 or 6 or 8 or 9 or 11 or 12 or 14 or 15 or is the method described in 17 or 18 or 19 or 20. 38. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 4. The method as claimed in claim 3, characterized in that it is initiated by a gas phase plasma of a vacuum arc discharge. 39. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 6. A method according to claim 5, characterized in that it is initiated by a gas-phase plasma of a vacuum arc discharge. 40. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 8. Method according to claim 7, characterized in that it is initiated by a gas-phase plasma of a vacuum arc discharge. 41. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 11. The method as claimed in claim 10, characterized in that it is initiated by a gas phase plasma of a vacuum arc discharge. 42. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 14. The method according to claim 13, characterized in that the plasma is initiated by a gas phase plasma of a vacuum arc discharge. 43. Maintaining the product under treatment (5) within a set temperature range is carried out under the supply of a floating potential. 17. The method according to claim 16, characterized in that the plasma is initiated by a gas phase plasma of a vacuum arc discharge. 44. Claim characterized in that when an arc discharge interruption occurs on the product (5), the negative potential is removed from the product (5) under treatment and at the same time the power supply to the gas phase of the vacuum arc discharge plasma is stopped. The method described in 30. 45. Claim characterized in that when an arc discharge interruption occurs on the product (5), the negative potential is removed from the product (5) under treatment and at the same time the power supply to the gas phase of the vacuum arc discharge plasma is stopped. Any one of 31 to 36 or claims 36 to 43 The method described in any of the following. 46. Claim characterized in that when an arc discharge interruption occurs on the product (5), the negative potential is removed from the product (5) under treatment and at the same time the power supply to the gas phase of the vacuum arc discharge plasma is stopped. 37. The method described in 37. 47. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 1 or 2 or 4 or 28. 48. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method described in claim 3. 49. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method described in claim 5. 50. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method described in claim 7. 51. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 10. 52. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 13. 53. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 16. 54. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 21. 55. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 29. 56. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method described in claim 3. 57. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 37. 58. The coating film is applied to the surface of the product (5) after the product (5) is maintained within a set temperature range in the gas phase of the vacuum arc discharge plasma. The method according to claim 45. 59. At the same time, a coating film is applied to the surface of the product under treatment (5), and a vacuum arc storage plate is applied. A magnetic field is generated in the region of Zuma's gas phase, and the magnetic field lines of the magnetic field generate a vacuum arc discharge voltage. 48. A method according to claim 47, characterized in that it is arranged in a plane perpendicular to the direction of flow. 60. At the same time a coating film is applied to the surface of the product under treatment (5), a vacuum arc discharge plate is applied. A magnetic field is generated in the region of Zuma's gas phase, and the magnetic field lines of the magnetic field generate a vacuum arc discharge voltage. Any one of claims 48 to 58, characterized in that it is arranged in a plane perpendicular to the direction of flow. The method described in 61. An integral cooling chamber, both enclosed in a low-pressure working gas medium in the vacuum chamber (1). Apparatus for processing products in a gas discharge plasma, comprising a direct current source (9) electrically coupled to a sword (2) and a main anode (3), the apparatus comprising: means (13) for the purpose of separating electrons from the gaseous phase, said means being A device characterized in that it is impermeable to metal ions present in the region of the body-cooled cathode (2) and produced by the integrally cooled cathode (2). 62. A claim characterized in that the treated product (5) is used as the main anode (3). 62. The device according to claim 61. 63. The product under treatment (5) is connected to a cathode (2), an electronic separation means (13) and an additional anode. an additional anode (22) arranged relative to the integral cold cathode (2) and the electronic separation means (13) to be inserted between the anode (3,22) and the anode (3,22); and a two-way switch (23) coupled to both the DC source (9) and the direct current source (9). 63. The device according to claim 61 or 62, wherein the device comprises: 64. The electronic separation means (13) are connected to the integral cold cassette by one of their sides (15). Claim 6 1 or 62, characterized in that it is formed as a set of V-shaped plates (14), facing the main anode (3) by the other side (15). The device described in. 65. The electronic separation means (13) are connected to the integral cold cassette by one of their sides (15). 64. Device according to claim 63, characterized in that it is formed as a set of V-shaped plates (14) facing the main anode (3) by the other side (15). 66. 65. Device according to claim 64, characterized in that the V-shaped plate set (14) of the electron separation means (13) is reciprocatable relative to the wall of the vacuum chamber (1). 67. 66. Device according to claim 65, characterized in that the set of V-shaped plates (14) of the electron separation means (13) are reciprocatable with respect to the walls of the vacuum chamber (1). 68. 63. Device according to claim 61 or 62, characterized in that the electronic separation means (13) are formed in the form of a louvered board. 69. 64. Device according to claim 63, characterized in that the electronic separation means (13) are formed in the form of a louvered board. 70. It is noted that the electron separating means (13) is formed as an iris diaphragm, the movable parts (25) of which are arranged at a distance “a” from each other in their overlapping bands along the long axis of the vacuum chamber (1). 63. A device according to claim 61 or 62. 71. It is assumed that the electron separating means (13) is formed as an iris diaphragm, the movable parts (25) of which are arranged at a distance "a" from each other in their overlapping bands along the long axis of the vacuum chamber (1). 64. The apparatus of claim 63, characterized in that: 72. The electronic separation means (13) comprises an L-shaped branch (40) having an end (40) facing the main anode (3) and an end (41) arranged in close proximity to the integral cold cathode (2). Claim 61 or 62, characterized in that it is formed as: equipment. 73. Electron separation means (13) are aligned with the end (40) facing the main anode (3). 64. The device according to claim 63, characterized in that it is formed as an L-shaped branch (39) with an end (41) arranged in close proximity to the body-cooled cathode (2). 74. The electron separating means (13) is actually the wall (43) of the vacuum chamber (1), said wall being in the area of the integral cold cathode (2), the integral cold cathode (2) being its active part (12) is arranged so as to face the wall 43. is the device described in 62. 75. The electron separating means (13) is actually the wall (43) of the vacuum chamber (1), said wall being in the area of the integral cold cathode (2), the integral cold cathode (2) being its active part (12) 64. Device according to claim 63, characterized in that it is arranged so as to face the wall (43). 76. Device according to claim 63, characterized in that the electron separation means (13) are formed as a disk (60) arranged with a gap "b" relative to the wall (61) of the vacuum chamber (1). . 77. The integral cold cathode (2) is angularly displaceable through 180° with respect to the wall (43) of the vacuum chamber (1) serving as the electron separation means (13). Claim 74, characterized in that (2) is arranged. equipment. 78. The integral cold cathode (2) is angularly displaceable through 180° with respect to the wall (43) of the vacuum chamber (1) serving as the electron separation means (13). Claim 75, characterized in that (2) is arranged. equipment. 79. An additional anode (22) is a hollow cylinder whose end (45) faces the integral cold cathode (2) and whose internal space (46) accommodates the product under treatment (47). - (44), a solenoid (49) surrounding an additional anode (22), and a disk (50) having a central hole (51), said disk (50) having an electron separation means ( 13) and an end (45) of the additional anode (22), inserted in close proximity to said means (13) and said anode (22) and coaxial with said additional anode (22). Claim 63, characterized in that: equipment. 80. Coupled to the cathode of each direct current source (55), the electronic separation means (13) and an additional a 64. The device according to claim 63, characterized in that it comprises a sputtering target (53) inserted between the node (22). 81. Coupled to the cathode of each direct current source (55), the electronic separation means (13) and an additional a 80. Device according to claim 79, characterized in that it comprises a sputtering target (53) inserted between the node (22). 82. A sputtering target (52) is arranged coaxially with the additional anode (22). 81. The device of claim 80, wherein: 83. 83. Device according to claim 82, characterized in that the sputtering target (52) is formed as a disk (54) with a central hole (53). 84. The additional anode (22) is formed as a ring (59), the cross-sectional area of the interior (62) of the ring (59) of the additional anode (22) being equal to the cross-section of the interior of the central hole (53) of the sputtering target (52). 83. A device according to claim 82, characterized in that the area is equal to the area. 85. The additional anode (22) is formed as a ring (59), the cross-sectional area of the interior (62) of the ring (59) of the additional anode (22) being equal to the cross-section of the interior of the central hole (53) of the sputtering target (52). Claim 82, characterized in that the area is larger than the area. equipment. 86. Claim 84, characterized in that the sputtering target (52) is formed as a hollow cylinder (58), the internal space (63) of the hollow cylinder (58) actually being the central hole (53) of the sputtering target (52). The equipment described. 87. The sputtering target (52) is formed as a set of arcuate plates (66) insulated from each other and arranged circumferentially to form a central hole (53) of the sputtering target (52). 85. The device of claim 84, characterized in that: 88. Claim 85, characterized in that the sputtering target (52) is formed as a hollow cylinder (58), the internal space (63) of the hollow cylinder (58) actually being the central hole (53) of the sputtering target (52). The equipment described. 89. The sputtering target (52) is formed as a set of arcuate plates (66) insulated from each other and arranged circumferentially to form a central hole (53) of the sputtering target (52). 86. The device of claim 85, characterized in that: