JP7210866B2 - 着色表面を備えたコーティングの製造方法 - Google Patents
着色表面を備えたコーティングの製造方法 Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims description 76
- 239000011248 coating agent Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 132
- 239000002184 metal Substances 0.000 claims description 131
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 51
- 238000002048 anodisation reaction Methods 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 29
- 239000003792 electrolyte Substances 0.000 claims description 27
- 150000002739 metals Chemical class 0.000 claims description 27
- 238000005240 physical vapour deposition Methods 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000007733 ion plating Methods 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 134
- 239000002346 layers by function Substances 0.000 description 19
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 12
- 230000001747 exhibiting effect Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000003086 colorant Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- -1 TiCN Chemical compound 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- OSIVBHBGRFWHOS-UHFFFAOYSA-N dicarboxycarbamic acid Chemical compound OC(=O)N(C(O)=O)C(O)=O OSIVBHBGRFWHOS-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000816 inconels 718 Inorganic materials 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/36—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including layers graded in composition or physical properties
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/14—Producing integrally coloured layers
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/26—Anodisation of refractory metals or alloys based thereon
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Description
-真空コーティングチャンバの内部にコーティングされる基体を提供するステップ、
-コーティングされる基板本体の表面にコーティングを堆積し、コーティングの堆積は、少なくとも1つもしくは複数の金属、好ましくは2つ以上の金属を含む、または少なくとも2つの異なる金属で形成された1つもしくは複数の金属合金を含む金属層の堆積を含むステップ、
-金属層の陽極酸化による着色表面を示す着色酸化物層を形成するステップ、
ここで、
-陽極酸化は、コーティング基体をアノードとして接続したアルカリ電解質浴で行われる。
-アルミニウムとクロムとの混合物、または
-ジルコニウムもしくはジルコニウムを含む金属の混合物、または
-ニオブもしくはニオブを含む金属の混合物、または
-タンタルもしくはタンタルを含む金属の混合物、または
-クロムもしくはクロムを含む金属の混合物。
-基体の表面に直接機能層を堆積し、機能層は、金属層に含まれる同じ金属の窒化物として生成され、
-金属層を堆積し、
-アルカリ電解質浴での金属層の陽極酸化により着色層を生成する。
ここで、機能層と金属層との製造に同じターゲットと同じPVD技術が使用され(例えば、上記のHiPIMSまたはフィルターアークイオンメッキ)、HiPIMSを使用する場合、アルゴンを作業ガスとして使用し、窒素を機能層の堆積用の反応性ガスとして使用し、アルゴンのみを金属層の堆積用の作業ガスとして使用する。
-ツール、例えば、切削ツールまたは成形ツール、
-医療装置または医療デバイス、
-自動車部品、
-装飾部品、
-コーティングされる基板材料としてSiCまたはSiNを含むツールまたは部品。
-真空コーティングチャンバの内部にコーティングされる基体を提供するステップ、
-1つもしくは複数の金属を含む、または少なくとも2つの異なる金属で形成された1つもしくは複数の金属合金を含む金属層の堆積を含む、コーティングされる基体の表面にコーティングを堆積するステップ、
-金属層の陽極酸化による着色表面を示す着色酸化物層を形成するステップ、
ここで、
-陽極酸化は、コーティング基体をアノードとして接続したアルカリ電解質浴で行われる。
マグネトロンスパッタリング技術、
-HiPIMS技術、または
-微粒子フィルターシステムの使用を含むアークイオンメッキ技術。
着色コーティング表面を有するコーティングを有するコーティング基体を製造する方法であって、
a)真空コーティングチャンバの内部でコーティングされる1つもしくは複数の基板表面を含む1つの基板本体または複数の基体を提供するステップと、
b)ステップa)の実行後、コーティングする1つまたは複数の基板表面にコーティングを堆積し、コーティングの堆積には、金属層の堆積が含まれ、堆積コーティングがさらなる層を含む場合、金属層は上層として堆積されるステップと、
c)ステップb)の実行後、前記金属層の陽極酸化による前記着色コーティング表面の形成ステップと、を含み、
金属層は、少なくとも2つの異なる金属を含む単一金属層として堆積され、陽極酸化は、12から14の間、好ましくは12.5から13.5の間のpH値を有するアルカリ電解質浴中で起こり、コーティングされる1つまたは複数の基板表面はアノードとして接続され、前記アルカリ電解質浴は水酸化ナトリウム(NaOH)を含むことを特徴とする、方法。
-マグネトロンスパッタリング技術、
-HiPIMS技術、または
-微粒子フィルターシステムの使用を含むアークイオンメッキ技術。
-1つもしくは複数の金属と1つもしくは複数の金属合金、または
-1つもしくは複数の金属合金。
Claims (7)
- 着色コーティング表面を備えたコーティングを有するコーティング基体の製造方法であって、
a)真空コーティングチャンバの内部でコーティングされる1つまたは複数の基板表面を含む1つの基板本体または複数の基体を提供するステップと、
b)ステップa)の実行後、コーティングされる1つまたは複数の基材表面にコーティングを堆積し、前記コーティングの堆積は金属層の堆積を含み、堆積される前記コーティングがさらなる層を含む場合、前記金属層は上層として堆積されるステップと、
c)ステップb)の実行後、前記金属層の陽極酸化による前記着色コーティング表面の形成ステップと、を含み、
前記金属層は、少なくとも2つの異なる金属を含む単一金属層として堆積され、前記陽極酸化は、12から14の間のpH値を有するアルカリ電解質浴中で起こり、コーティングされる前記1つまたは複数の基板表面はアノードとして接続され、前記アルカリ電解質浴は水酸化ナトリウム(NaOH)を含み、かつ重量パーセントで0.5以上0.6以下のNaOH濃度を有する水酸化ナトリウム水溶液であり、
前記金属層は、
アルミニウムとチタンとの混合物(AlTi)、または
AlTi合金、
から形成されていることを特徴とする、方法。 - ステップb)中に、コーティングされる前記1つまたは複数の基板表面と前記単一金属層との間に少なくとも1つの非金属層が堆積され、前記単一金属層は少なくとも1つの非金属層上に直接堆積されることを特徴とする、請求項1に記載の方法。
- 前記金属層は、PVD技術を使用することにより堆積される、請求項1または2に記載の方法。
- 前記金属層は、マグネトロンスパッタリング技術を使用することにより堆積される、請求項3に記載の方法。
- 前記金属層は、HiPIMS技術を使用することにより堆積される、請求項4に記載の方法。
- 前記金属層は、微粒子フィルターシステムの使用を含むアークイオンメッキ技術を使用することにより堆積される、請求項3に記載の方法。
- 前記陽極酸化電圧が200Vより低くなるように選択される、請求項1~6のいずれか1項に記載の方法。
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