JP6908858B2 - Housing - Google Patents

Description

The present invention relates to a prober for inspecting electrical characteristics of a plurality of semiconductor devices (chips) formed on a semiconductor wafer, and more particularly to a prober having a plurality of measuring units stacked in a multi-stage manner.

The semiconductor manufacturing process has a large number of processes, and various inspections are performed in various manufacturing processes in order to guarantee quality and improve yield. For example, when a plurality of chips of a semiconductor device are formed on a semiconductor wafer, the electrode pads of the semiconductor device of each chip are connected to a test head, a power supply and a test signal are supplied from the test head, and the semiconductor device is output. Wafer level inspection is performed by measuring the signal with a test head and electrically inspecting whether it operates normally.

After wafer level inspection, the wafer is affixed to the frame and cut into individual chips with a die. As for each of the cut chips, only the chips confirmed to operate normally are packaged in the next assembly step, and the malfunctioning chips are excluded from the assembly step. In addition, the packaged final products are shipped inspected.

Wafer level inspection is performed using a prober that brings the probe into contact with the electrode pads of each chip on the wafer. The probe is electrically connected to the terminal of the test head, and power and test signals are supplied from the test head to each chip via the probe, and the output signal from each chip is detected by the test head to see if it operates normally. To measure.

In the semiconductor manufacturing process, wafers are being made larger and further miniaturized (integrated) in order to reduce manufacturing costs, and the number of chips formed on one wafer is extremely large. ing. Along with this, the time required for inspecting one wafer with a prober has become longer, and improvement in throughput is required. Therefore, in order to improve the throughput, multiprobing is performed in which a large number of probes are provided so that a plurality of chips can be inspected at the same time. In recent years, the number of chips to be inspected at the same time has been increasing, and attempts have been made to inspect all the chips on the wafer at the same time. Therefore, the tolerance for alignment of the electrode pad and the probe in contact with each other is small, and it is required to improve the positioning accuracy of movement in the prober.

On the other hand, the simplest way to increase the throughput is to increase the number of probers, but increasing the number of probers causes a problem that the installation area of the probers on the production line also increases. In addition, if the number of probers is increased, the equipment cost will increase accordingly. Therefore, it is required to increase the throughput by suppressing the increase in the installation area and the increase in the equipment cost.

To solve such a problem, the applicant of the present application has proposed a prober having a plurality of measuring units stacked in a multi-stage manner (see Patent Document 1). Since this prober has a laminated structure (multi-stage structure) in which a plurality of measuring units are laminated in a multi-stage manner, wafer level inspection can be performed for each measuring unit, and an increase in installation area and an increase in equipment cost can be suppressed. Throughput can be improved.

Japanese Unexamined Patent Publication No. 2014-150168

By the way, since the prober proposed by the applicant of the present application has a laminated structure in which a plurality of measuring portions are laminated in a multi-stage manner, for example, an inspection of a chip in a high temperature state (high temperature measurement) may be performed for each stage. It is possible to inspect chips in a low temperature state (low temperature measurement). In this case, the heating and cooling of the chips is performed by the wafer chuck that holds the wafer on which the chips are formed.

However, the prober has the following problems because the housing for partitioning a plurality of measurement units is composed of an integrated grid frame (integrated housing) in which a plurality of frames are combined in a grid pattern. ..

That is, when high-temperature measurement is performed in the measuring unit of, for example, one of the plurality of stages, thermal expansion of the peripheral members occurs due to the warming of the parts around the wafer chuck. Further, when the low temperature measurement is performed, the peripheral members shrink due to the cooling of the parts around the wafer chuck. In addition to the wafer chuck, the test head serves as a heat source and deforms the housing around it. This deformation of the housing also affects the housing parts around the measuring parts of other stages, and the parallelism between the probe and the wafer chuck changes in the measuring parts arranged in each stage, so that the wafer is positioned with respect to the probe. There is a problem that the accuracy is deteriorated and the measurement accuracy of the wafer level inspection is lowered.

The present invention has been made in view of such circumstances, and prevents deformation of the housing of a prober having a plurality of measuring units stacked in a multi-stage structure, improves the positioning accuracy of the wafer with respect to the probe, and performs wafer level inspection. The purpose is to provide a prober that can perform the above with high accuracy.

In order to achieve the above object, the prober according to the present invention is a prober having a plurality of measuring units stacked in a multi-stage manner, and includes a housing for partitioning the plurality of measuring parts, and the housing is a stage. Each has a plurality of separate housings that are independent of each other, and each of the plurality of separate housings has a support leg portion that is installed on the floor surface.

According to the present invention, since the housing is composed of a separation type housing composed of a plurality of separation housings that are independent of each other for each stage, the positioning accuracy of the wafer with respect to the probe is improved, and the wafer level inspection is performed with high accuracy. It becomes possible to do.

In one aspect of the prober according to the present invention, the support legs preferably have a level pad that adjusts the height of the floor surface and the separation housing. According to this aspect, it is possible to easily adjust each of the separated housings constituting the housing in the horizontal and height directions with respect to the floor surface.

In one aspect of the prober according to the present invention, it is preferable that a plurality of separated housings are configured in a nested manner. According to this aspect, since the plurality of separated housings are configured in a nested manner, it is possible to suppress an increase in the installation area and save space.

In one aspect of the prober according to the present invention, it is preferable that a heat insulating material or a damping material is arranged between the plurality of separated housings. According to this aspect, since the heat insulating material or the damping material is arranged between the separated housings, it is effective that the influence of heat or vibration generated in the measuring part of each stage extends to the measuring part of the other stage. Can be prevented.

In one aspect of the prober according to the present invention, the measuring unit preferably includes a test head, a probe card having a probe, and a wafer chuck holding a wafer. This aspect shows a specific aspect of the measuring unit.

In one aspect of the prober according to the present invention, an alignment device for relatively aligning the wafer held by the wafer chuck and the probe is provided, and the alignment device is provided for each stage and is arranged in the same stage. It is preferable that the structure is movable between a plurality of measuring units. As in this embodiment, even when the alignment device is movably configured between a plurality of measuring units arranged in the same stage, the housing is composed of a plurality of separated housings, so that the housing is composed of a plurality of separated housings. Since vibration is less likely to be transmitted to the measuring portion and deformation is prevented, the effect of the present invention can be made remarkable.

According to the present invention, the positioning accuracy of the wafer with respect to the probe is improved, and the wafer level inspection can be performed with high accuracy.

External view showing the overall configuration of the prober according to the embodiment of the present invention. Top view showing the prober shown in FIG. The figure which showed the internal structure of the measurement unit of FIG. 1 (front view) The view which showed the internal structure of the measurement unit of FIG. 1 (side view) Schematic diagram showing the configuration of the measuring unit The figure which showed the state which the test head, the pogo frame, the probe card, and the wafer chuck were integrated. The figure which showed the other configuration example of the housing The figure which showed the other structural example of the housing

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is an external view showing an overall configuration of a prober according to an embodiment of the present invention. FIG. 2 is a plan view showing the prober shown in FIG.

As shown in FIGS. 1 and 2, the prober 10 of the present embodiment is arranged adjacent to the loader unit 14 for supplying and collecting the wafer W (see FIG. 5) to be inspected, and the loader unit 14, and a plurality of measurements are performed. It includes a measuring unit 12 having a unit 16. The measuring unit 12 has a plurality of measuring units 16, and when the wafer W is supplied from the loader unit 14 to each measuring unit 16, each measuring unit 16 inspects the electrical characteristics of each chip of the wafer W. (Wafer level inspection) is performed. Then, the wafer W inspected by each measuring unit 16 is collected by the loader unit 14. The prober 10 also includes an operation panel 21, a control device (not shown) for controlling each part, and the like.

The loader unit 14 has a load port 18 on which the wafer cassette 20 is placed, and a transfer unit 22 that conveys the wafer W between each measurement unit 16 of the measurement unit 12 and the wafer cassette 20. The transport unit 22 is provided with a transport unit drive mechanism (not shown), and is configured to be movable in the X and Z directions and to be rotatable in the θ direction (around the Z direction). Further, the transport unit 22 is provided with a transport arm 24, and the transport arm 24 can be expanded and contracted back and forth by the transport unit drive mechanism. A suction pad (not shown) is provided on the upper surface of the transfer arm 24, and the transfer arm 24 holds the wafer W by vacuum suctioning the back surface of the wafer W with the suction pad. As a result, the wafer W in the wafer cassette 20 is taken out by the transfer arm 24 of the transfer unit 22 and transferred to each measurement unit 16 of the measurement unit 12 while being held on the upper surface thereof. Further, the inspected wafer W that has been inspected is returned from each measuring unit 16 to the wafer cassette 20 by the reverse route.

3 and 4 are views showing the internal structure of the measurement unit 12 of FIG. FIG. 3 is a view of the measurement unit 12 viewed from the front side (loader unit 14 side), and FIG. 4 is a view of the measurement unit 12 viewed from the side surface side. FIG. 5 is a schematic view showing the configuration of the measuring unit 16.

As shown in FIGS. 3 and 4, the measuring unit 12 has a laminated structure (multi-stage structure) in which a plurality of measuring units 16 are laminated in a multi-stage shape, and each measuring unit 16 has a laminated structure (multi-stage structure) in the X direction and the Z direction. It is arranged two-dimensionally along the line. In the present embodiment, as an example, four measuring units 16 in the X direction are stacked in three stages in the Z direction.

The measurement unit 12 includes a housing 30 for partitioning a plurality of measurement units 16. The housing 30 has a lattice shape in which a plurality of frames are combined in a grid pattern, and as will be described in detail later, a separation type housing composed of a plurality of separation housings 80A to 80C separated from each other for each stage. Make up the body.

Each measuring unit 16 has the same configuration, and as shown in FIG. 5, the wafer chuck 50 holding the wafer W, the head stage 52, the test head 54, the probe card 56, and the test A pogo frame 58 interposed between the head 54 and the probe card 56 is provided.

The test head 54 is supported above the head stage 52 by a test head holding portion (not shown). The test head 54 is electrically connected to the probe 66 of the probe card 56, supplies power and a test signal to each chip for electrical inspection, and detects an output signal from each chip to operate normally. To measure.

The head stage 52 is supported by the housing 30, and has a pogo frame mounting portion 53 having a circular opening corresponding to the planar shape of the pogo frame 58. The pogo frame mounting portion 53 has a positioning pin 63, and the pogo frame 58 is fixed to the pogo frame mounting portion 53 in a state of being positioned by the positioning pin 63. The method of fixing the pogo frame 58 is not particularly limited, but for example, a method of fixing the pogo frame 58 by vacuum suction to the support surface (suction surface) of the pogo frame mounting portion 53 by a suction means (not shown) is used. Suitable. As the fixing means other than the vacuum suction, a mechanical fixing means such as a screw may be used.

The pogo frame 58 electrically connects each terminal formed on the lower surface of the test head 54 (the surface facing the pogo frame 58) and each terminal formed on the upper surface of the probe card 56 (the surface facing the pogo frame 58). It has a large number of pogo pins (not shown) that connect to. Ring-shaped seal members 60 and 62 are formed on the outer peripheral portions of the upper surface (the surface facing the test head 54) and the lower surface (the surface facing the probe card 56) of the pogo frame 58, respectively. Then, a suction means (not shown) reduces the pressure in the space surrounded by the test head 54, the pogo frame 58, and the seal member 60, and the space surrounded by the probe card 56, the pogo frame 58, and the seal member 62, thereby performing the test. The head 54, the pogo frame 58, and the probe card 56 are integrated (see FIG. 6).

The probe card 56 has a large number of probes 66 corresponding to the electrodes of each chip of the wafer W. Each probe 66 is formed so as to project downward from the lower surface of the probe card 56 (the surface facing the wafer chuck 50), and each terminal provided on the upper surface of the probe card 56 (the surface facing the pogo frame 58). Is electrically connected to. Therefore, when the test head 54, the pogo frame 58, and the probe card 56 are integrated, each probe 66 is electrically connected to each terminal of the test head 54 via the pogo frame 58. The probe card 56 of this example includes a large number of probes 66 corresponding to the electrodes of all the chips of the wafer W to be inspected, and each measuring unit 16 includes all the chips on the wafer W held by the wafer chuck 50. Simultaneous inspection is performed.

The wafer chuck 50 sucks and fixes the wafer W by vacuum suction or the like. The wafer chuck 50 is detachably supported by an alignment device 70 described later, and can be moved in the X, Y, Z, and θ directions by the alignment device 70. Further, a ring-shaped sealing member 64 is provided on the outer peripheral portion of the upper surface (wafer mounting surface) of the wafer chuck 50. Then, the space surrounded by the probe card 56, the wafer chuck 50, and the sealing member 64 is depressurized by the suction means (not shown), so that the wafer chuck 50 is attracted toward the probe card 56. As a result, each probe 66 of the probe card 56 comes into contact with the electrode pad of each chip of the wafer W, and the inspection can be started.

Inside the wafer chuck 50, heating / cooling as a heating / cooling source is performed so that the chip can be subjected to an electrical characteristic inspection in a high temperature state (for example, 150 ° C. at the maximum) or in a low temperature state (for example, −40 ° C. at the minimum). A mechanism (not shown) is provided. As the heating / cooling mechanism, a known appropriate heater / cooler can be adopted. For example, a double-layer structure of a heating layer of a surface heater and a cooling layer provided with a cooling fluid passage, or heat. Various types are conceivable, such as a single-layer heating / cooling device in which a cooling tube around which a heating heater is wound is embedded in a conductor. Further, instead of electric heating, a thermal fluid may be circulated, or a Pertier element may be used.

The measuring unit 12 further includes an alignment device 70 that detachably supports the wafer chuck 50. The alignment device 70 is provided for each stage, and is configured to be mutually movable between a plurality of measuring units 16 arranged in each stage by an alignment device drive mechanism (not shown). That is, the alignment device 70 is shared among a plurality of (four in this example) measuring units 16 arranged in the same stage, and moves between the plurality of measuring units 16 arranged in the same stage. do. When the alignment device 70 is moved to each measuring unit 16, the alignment device 70 is fixed to a positioning and fixing device (not shown), and the wafer chuck 50 is moved in the X, Y, Z, and θ directions by the alignment device drive mechanism described above to move the wafer chuck 50 in the X, Y, Z, and θ directions. Relative alignment is performed between the wafer W held by the probe card 56 and the probe card 56. Although not shown, the alignment device 70 includes a needle position detection camera and a wafer alignment camera in order to detect the relative positional relationship between the electrode of the chip of the wafer W held by the wafer chuck 50 and the probe 66. And have.

The alignment device 70 sucks and fixes the wafer chuck 50 by vacuum suction or the like, but if the wafer chuck 50 can be fixed, fixing means other than vacuum suction may be used, for example, fixing by mechanical means or the like. You may do so. Further, the alignment device 70 is provided with a positioning member (not shown) so that the relative positional relationship with the wafer chuck 50 is always constant.

Next, an inspection method using the prober 10 of the present embodiment will be described.

When the inspection is performed using the prober 10 of the present embodiment, in the loader unit 14, the wafer W in the wafer cassette 20 is taken out by the transfer arm 24 of the transfer unit 22 and held on the upper surface of the transfer arm 24. Is conveyed to each measuring unit 16 of the measuring unit 12.

On the other hand, in the measurement unit 12, the alignment device 70 provided for each stage moves to a predetermined measurement unit 16, positions the wafer chuck 50 on the upper surface of the alignment device 70, and fixes the wafer chuck 50 by suction.

Subsequently, the alignment device 70 moves the wafer chuck 50 to a predetermined delivery position. Then, when the wafer W is delivered from the transfer unit 22 of the loader unit 14, the wafer W is held on the upper surface of the wafer chuck 50.

Next, the alignment device 70 moves the wafer chuck 50 holding the wafer W to a predetermined alignment position, and the electrode of the chip of the wafer W held by the wafer chuck 50 by a needle position detection camera and a wafer alignment camera (not shown). The relative positional relationship between the wafer and the probe 66 is detected, and based on the detected positional relationship, the wafer chuck 50 is moved in the X, Y, Z, and θ directions, and the wafer W and the probe held by the wafer chuck 50 are moved. Relative alignment with the card 56 is performed.

After this alignment is performed, the alignment device 70 moves the wafer chuck 50 to a predetermined measurement position (position facing the probe card 56) and raises the wafer chuck 50 until the wafer chuck 50 reaches a predetermined height. Let me. Then, the alignment device 70 releases the fixing of the wafer chuck 50, and the wafer chuck 50 is separated from the alignment device 70 in a state of being held by a support mechanism (chuck dropout prevention mechanism) (not shown). The support mechanism includes a plurality of holding portions for holding the wafer chuck 50. As such a support mechanism, the one described in Patent Document 1 proposed by the applicant of the present application can be used.

When the wafer chuck 50 held by the support mechanism is pulled up to a height at which the sealing member 64 formed on the upper surface thereof contacts the lower surface of the probe card 56 (the surface facing the wafer chuck 50), the probe card 56 and the wafer chuck 50 are pulled up. The space surrounded by the 50 and the sealing member 64 is depressurized by a suction means (not shown), so that the wafer chuck 50 is attracted toward the probe card 56, the probe card 56 and the wafer chuck 50 are in close contact with each other, and the probe card is brought into close contact with the probe card. Each probe 66 of 56 contacts the electrode pad of each chip of the wafer W with a uniform contact pressure.

As a result, as shown in FIG. 6, the measuring unit 16 is in a state in which the test head 54, the pogo frame 58, the probe card 56, and the wafer chuck 50 are integrated, and the wafer level inspection can be started.

After that, a power supply and a test signal are supplied from the test head 54 to each chip of the wafer W, a signal output from the chip is detected, and an electrical operation test is performed.

Hereinafter, for the other measuring units 16, the wafer W is supplied onto the wafer chuck 50 in the same procedure, and after the alignment operation and the contact operation are completed in each measuring unit 16, simultaneous inspection of each chip of the wafer W is performed. It is done sequentially. That is, each measuring unit 16 supplies a power supply and a test signal from the test head 54 to each chip of the wafer W, detects the signal output from the chip, and performs an electrical operation inspection.

When the inspection is completed in each measuring unit 16, the alignment device 70 is sequentially moved to each measuring unit 16 to collect the wafer chuck 50 in which the inspected wafer W is held.

That is, when the alignment device 70 moves to the measuring unit 16 for which the inspection has been completed, the alignment device 70 rises to a position where its upper surface abuts on the wafer chuck 50, and is surrounded by the probe card 56, the wafer chuck 50, and the sealing member 64. The decompression of the space is released. At this time, since the wafer chuck 50 is held by the support mechanism described above, the wafer chuck 50 is prevented from falling off. After the alignment device 70 positions and fixes the wafer chuck 50 on the upper surface thereof, the wafer chuck 50 is released from being held by the support mechanism. Further, the alignment device 70 moves the wafer chuck 50 to a predetermined transfer position, releases the inspected wafer W from the wafer chuck 50, and delivers it to the transfer unit 22. The inspected wafer W delivered to the transfer unit 22 is held by the transfer arm 24 and returned to the wafer cassette 20 arranged in the loader unit 14.

In the present embodiment, as shown in FIGS. 3 and 4, one wafer chuck 50 is assigned to each measuring unit 16, but the wafer chuck 50 is located between the plurality of measuring units 16. May be shared by. In this case, the alignment device 70 moves the wafer chuck 50 to and from each other between the plurality of measuring units 16 sharing the wafer chuck 50.

Next, the configuration of the housing 30, which is a characteristic part of the present invention, will be described in detail.

In the present embodiment, as shown in FIG. 3, the housing 30 is composed of a plurality of separated housings 80 (80A, 80B, 80C) that are independent of each other for each stage. That is, the housing 30 has a first-stage first separation housing 80A, a second-stage second separation housing 80B, and a third-stage third separation housing 80C, and each separation housing The 80A to 80C are separated from each other so that the heat and vibration generated in the measuring unit 16 of each stage are not directly transmitted to the measuring unit 16 of the other stage. Each of the separated housings 80 (80A, 80B, 80C) has a support leg portion 84 (84A to 84C) that is independent of each other and is installed on the floor surface. The specific configuration of each separation housing 80 is as follows.

The first separation housing 80A has a first frame main body 82A formed by combining a plurality of frames extending in the X, Y, and Z directions in a grid pattern, and the first frame main body 82A. A first support leg portion 84A is attached to the lower surface of the above.

The second separation housing 80B is connected to a second frame main body 82B and a second frame main body 82B, which are formed by combining a plurality of frames extending in the X, Y, and Z directions in a grid pattern. It has a support frame 86 that supports the second frame main body 82B at a predetermined height. The strut frame 86 is arranged so as to be separated from the first frame main body portion 82A, and the second support leg portion 84B is attached to the lower surface of the strut frame 86.

The third separation housing 80C is connected to a third frame main body 82C and a third frame main body 82C, which are formed by combining a plurality of frames extending in the X, Y, and Z directions in a grid pattern. It has a support frame 88 that supports the third frame main body 82C at a predetermined height. The strut frame 88 is arranged apart from the outside of the strut frame 86 (the side opposite to the frame main body 40B), and the third support leg portion 84C is attached to the lower surface of the strut frame 88.

The support legs 84A to 84C are not particularly limited as long as the separate housings 80A to 80C can be installed on the floor independently of each other. In the present embodiment, as an example, each of the support legs 84A to 84C is composed of a level pad. According to this configuration, each of the separated housings 80A to 80C can be easily adjusted in the horizontal and height directions with respect to the floor surface.

As described above, according to the present embodiment, the second separation housing 80B is housed inside the third separation housing 80C, and the first separation housing 80A is housed inside the second separation housing 80B. .. That is, each of the separated housings 80A to 80C has a nested structure. The separated housings 80A to 80C are separated from each other, and each has independent support legs 84A to 84C and is installed on the floor surface. Therefore, in the present embodiment, the structure is such that the influence of heat and vibration generated in the measuring unit 16 of each stage does not directly affect the measuring unit 16 of other stages. As a result, the housing 30 is less likely to be deformed as a whole, the positioning accuracy of the wafer W with respect to the probe 66 can be improved, and the wafer level inspection can be performed with high accuracy.

Further, in the present embodiment, as described above, since the housing 30 is composed of a separate housing composed of a plurality of separate housings 80 (80A to 80C), the measurement conditions can be easily changed for each stage. For example, the even-numbered measurement unit 16 can perform low-temperature measurement, and the odd-numbered measurement unit 16 can perform high-temperature measurement.

Further, in the present embodiment, it is possible to effectively prevent the vibration generated in the measuring unit 16 of each stage from propagating to the measuring unit 16 of the other stage by the separable housing. Therefore, when the alignment device 70 arranged for each stage moves to the predetermined measuring unit 16, the time required for the alignment device 70 to settle can be shortened, and the probe 66 comes into contact with the electrode pad of each chip of the wafer W. The contact operation can be performed stably and reliably, and the accuracy of wafer level inspection can be improved.

In the present embodiment, it is preferable that the separated housings 80 are provided with predetermined gaps from each other in consideration of deformation due to heat, vibration, or own weight. According to this configuration, even if the separated housings 80 are deformed by heat or vibration, they do not come into contact with each other, so that the influence of one separated housing does not affect the other separated housings.

Further, in the present embodiment, as shown in FIG. 7, a heat insulating material 90 may be provided between the separated housings 80. In FIG. 7, as an example, the first separation housing 80A is provided with the heat insulating material 90 on the surface facing the second separation housing 80B, and the second separation housing 80B faces the third separation housing 80C. A heat insulating material 90 is provided on the surface to be used. As a result, it is possible to effectively prevent the influence of heat generated in the measuring unit 16 of each stage from affecting the measuring unit 16 of other stages.

Further, in the present embodiment, as shown in FIG. 8, a vibration damping material 92 may be provided between the separated housings 80. In FIG. 8, as an example, a damping material 92 is provided between the first separation housing 80A and the second separation housing 80B, and between the second separation housing 80B and the third separation housing 80C, respectively. .. As a result, it is possible to effectively prevent the influence of the vibration generated in the measuring unit 16 of each stage from affecting the measuring unit 16 of the other stage.

Although the prober of the present invention has been described in detail above, the present invention is not limited to the above examples, and it goes without saying that various improvements and modifications may be made without departing from the gist of the present invention. be.

10 ... prober, 12 ... measurement unit, 14 ... loader unit, 16 ... measurement unit, 18 ... load port, 20 ... wafer cassette, 21 ... operation panel, 22 ... transfer unit, 24 ... transfer arm, 30 ... housing, 50 Wafer chuck, 52 ... head stage, 54 ... test head, 56 ... probe card, 56 ... pogo frame, 60 ... seal member, 62 ... seal member, 64 ... seal member, 66 ... probe, 80 ... separation housing, 80A ... 1st separation housing, 80B ... 2nd separation housing, 80C ... 3rd separation housing, 84 ... support legs, 84A ... 1st support legs, 84B ... 2nd support legs, 84C ... 3rd support Legs, 90 ... Insulation material, 92 ... Vibration damping material

Claims (6)

A housing that is arranged in multiple stages and has a plurality of electrical measuring units for inspecting the electrical characteristics of each chip of the wafer.
Each stage has multiple separate housings that are independent of each other.
Each of the plurality of separate housings has a support leg portion to be installed on the floor surface.
Housing. A housing that is arranged in multiple stages and has a plurality of electrical measuring units for inspecting the electrical characteristics of each chip of the wafer.
Each stage has multiple separate housings that are independent of each other.
Each of the plurality of separated housings has a support leg portion to be installed on the floor surface.
A heat insulating material is arranged between the plurality of separation housings.
Housing. A damping material is arranged between the plurality of separation housings.
The housing according to claim 2. A housing that is arranged in multiple stages and has a plurality of electrical measuring units for inspecting the electrical characteristics of each chip of the wafer.
Each stage has multiple separate housings that are independent of each other.
Each of the plurality of separated housings has a support leg portion to be installed on the floor surface.
A damping material is arranged between the plurality of separation housings.
Housing. The support legs have a level pad that adjusts the height of the floor surface and the separation housing.
The housing according to any one of claims 1 to 4. The plurality of separated housings are configured in a nested manner.
The housing according to any one of claims 1 to 5.

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