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JP6495754B2 - Display device - Google Patents

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JP6495754B2
JP6495754B2 JP2015119249A JP2015119249A JP6495754B2 JP 6495754 B2 JP6495754 B2 JP 6495754B2 JP 2015119249 A JP2015119249 A JP 2015119249A JP 2015119249 A JP2015119249 A JP 2015119249A JP 6495754 B2 JP6495754 B2 JP 6495754B2
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display device
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JP2017004838A5 (en
JP2017004838A (en
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拓磨 西ノ原
拓磨 西ノ原
木村　泰一
泰一 木村
純 藤吉
純 藤吉
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Japan Display Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8794—Arrangements for heating and cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Description

本発明は、表示装置に関する。   The present invention relates to a display device.

従来、発光層を含む自発光素子層への水分の侵入を抑制するバリア層として機能する下地絶縁層（下地層）を有する表示装置が知られている（例えば、特許文献１の図２）。下地層としては無機層と有機層が積層して構成されるものがある。   Conventionally, a display device having a base insulating layer (base layer) that functions as a barrier layer that suppresses intrusion of moisture into a self-light-emitting element layer including a light-emitting layer is known (for example, FIG. 2 of Patent Document 1). As the underlayer, there is a layer formed by laminating an inorganic layer and an organic layer.

特開２０１５−７９８６１号公報Japanese Patent Laying-Open No. 2015-79861

本発明は、有機層と無機層を積層する構成を採用した表示装置において、有機層と無機層が剥がれることを抑制することを目的とする。   An object of the present invention is to suppress peeling of an organic layer and an inorganic layer in a display device employing a configuration in which an organic layer and an inorganic layer are stacked.

本発明の一態様は、粗面化上面を有する第１有機層と、前記第１有機層の前記粗面化上面に接する粗面化した下面と、該下面に倣った粗面化上面とを有する第１無機層と、前記第１無機層の前記粗面化上面に接する粗面化した下面を有するように設けられた第２有機層と、前記第２有機層の上面に接する第２無機層と、前記第２無機層の上層に配置された薄膜トランジスタと、を有することを特徴としたものである。   One aspect of the present invention includes a first organic layer having a roughened upper surface, a roughened lower surface in contact with the roughened upper surface of the first organic layer, and a roughened upper surface following the lower surface. A first inorganic layer, a second organic layer provided to have a roughened lower surface in contact with the roughened upper surface of the first inorganic layer, and a second inorganic in contact with the upper surface of the second organic layer And a thin film transistor disposed on an upper layer of the second inorganic layer.

本実施形態に係る表示装置の全体構成を模式的に示す断面図である。It is sectional drawing which shows typically the whole structure of the display apparatus which concerns on this embodiment. 下地層の積層構造の詳細を模式的に示す断面図である。It is sectional drawing which shows the detail of the laminated structure of a base layer typically. 本実施形態に係る表示装置の製造工程を説明するための工程図である。It is process drawing for demonstrating the manufacturing process of the display apparatus which concerns on this embodiment. 本実施形態の変形例に係る表示装置の全体構成を模式的に示す断面図である。It is sectional drawing which shows typically the whole structure of the display apparatus which concerns on the modification of this embodiment.

以下に、本発明の各実施形態について、図面を参照しつつ説明する。なお、開示はあくまで一例にすぎず、当業者において、発明の主旨を保っての適宜変更について容易に想到し得るものについては、当然に本発明の範囲に含有されるものである。また、図面は説明をより明確にするため、実際の態様に比べ、各部の幅、厚さ、形状等について模式的に表される場合があるが、あくまで一例であって、本発明の解釈を限定するものではない。また、本明細書と各図において、既出の図に関して前述したものと同様の要素には、同一の符号を付して、詳細な説明を適宜省略することがある。   Embodiments of the present invention will be described below with reference to the drawings. It should be noted that the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, for the sake of clarity, the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited. It is not limited. In addition, in the present specification and each drawing, elements similar to those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description may be omitted as appropriate.

図１は、本実施形態に係る表示装置の全体構成を模式的に示す断面図である。本実施形態に係る有機ＥＬ（Ｅｌｅｃｔｒｏ Ｌｕｍｉｎｅｓｃｅｎｃｅ）表示装置（以下、単に表示装置という）１００は、複数の画素が形成される表示部に画像を表示する表示装置である。表示装置１００は、図１に示すように、自発光素子層１０と、封止層２０と、下地層３０と、保護層４０（保護フィルムともいう）とを有し、それらが積層して構成される。図１に示した表示装置は、可撓性を有する表示装置（フレキシブルディスプレイ）であり、ガラス基板の代わりに例えばポリイミド樹脂からなる、可撓性を有する樹脂基板（フィルム基板）が用いられている。図１に示す下地層３０には、この樹脂基板も含まれる。   FIG. 1 is a cross-sectional view schematically showing the overall configuration of the display device according to the present embodiment. An organic EL (Electro Luminescence) display device (hereinafter simply referred to as a display device) 100 according to the present embodiment is a display device that displays an image on a display unit in which a plurality of pixels are formed. As shown in FIG. 1, the display device 100 includes a self-luminous element layer 10, a sealing layer 20, a base layer 30, and a protective layer 40 (also referred to as a protective film), which are laminated. Is done. The display device shown in FIG. 1 is a flexible display device (flexible display), and a flexible resin substrate (film substrate) made of, for example, polyimide resin is used instead of a glass substrate. . The base layer 30 shown in FIG. 1 includes this resin substrate.

ここで、自発光素子層１０の積層構造について図１を参照して説明するが、自発光素子層１０は、画像を構成する複数の単位画素それぞれで輝度が制御されて発光する層であればよく、図１に示す構成に限定されるものではない。   Here, the laminated structure of the self-light-emitting element layer 10 will be described with reference to FIG. 1. The self-light-emitting element layer 10 is a layer that emits light with its brightness controlled by each of a plurality of unit pixels constituting an image. Well, it is not limited to the configuration shown in FIG.

自発光素子層１０は、自発光する発光層１１と、発光層１１の下面に設けられる下部電極１２と、発光層１１の上面に設けられる上部電極１３とを有する。また、図１において、自発光素子層１０は、下部電極１２と接続された薄膜トランジスタも含んでいる。即ち、自発光素子層１０は、当該薄膜トランジスタが備えている絶縁層１４ａ、１４ｂと、ソースドレイン電極１５と、絶縁層１６と、ゲート線層１７ａと、ポリシリコン層１７ｂと、ソースドレイ領域１８と、バンク１９とを有する。   The self light emitting element layer 10 includes a light emitting layer 11 that emits light, a lower electrode 12 provided on the lower surface of the light emitting layer 11, and an upper electrode 13 provided on the upper surface of the light emitting layer 11. In FIG. 1, the self-luminous element layer 10 also includes a thin film transistor connected to the lower electrode 12. That is, the self-luminous element layer 10 includes the insulating layers 14a and 14b, the source / drain electrodes 15, the insulating layer 16, the gate line layer 17a, the polysilicon layer 17b, and the source drain region 18 included in the thin film transistor. And a bank 19.

下部電極１２は、発光領域となる部分を覆うように形成され、絶縁層１４ａを貫通する孔を通じてソースドレイン電極１５に接続される。また、バンク１９は、下部電極１２の周縁部と、ポリシリコン層１７ｂ、ゲート線層１７ａなどが設けられる非発光領域上に形成される。発光層１１は、下部電極１２を覆うように形成されるが、非発光領域では、バンク１９によって下部電極１２と隔離される。   The lower electrode 12 is formed so as to cover a portion to be a light emitting region, and is connected to the source / drain electrode 15 through a hole penetrating the insulating layer 14a. The bank 19 is formed on the peripheral edge of the lower electrode 12 and on the non-light emitting region where the polysilicon layer 17b, the gate line layer 17a, and the like are provided. The light emitting layer 11 is formed so as to cover the lower electrode 12, but is separated from the lower electrode 12 by the bank 19 in the non-light emitting region.

下部電極１２と上部電極１３は、いずれか一方が陽極として機能し、他方が陰極として機能する。下部電極１２と上部電極１３に直流電圧が印加されると、陽極側から注入されたホールがホール輸送層（不図示）を経由し、一方、陰極側から注入された電子が電子輸送層（不図示）を経由して、それぞれ発光層１１に到達し、電子とホールが再結合する。このような電子とホールの再結合により、発光層１１は所定の波長の発光を行う。   One of the lower electrode 12 and the upper electrode 13 functions as an anode, and the other functions as a cathode. When a DC voltage is applied to the lower electrode 12 and the upper electrode 13, holes injected from the anode side pass through a hole transport layer (not shown), while electrons injected from the cathode side become electron transport layers (not shown). The light reaches the light-emitting layer 11 via each of them and recombines electrons and holes. By such recombination of electrons and holes, the light emitting layer 11 emits light of a predetermined wavelength.

封止層２０は、自発光素子層１０を封止する。封止層２０は、自発光素子層１０へ水分等が侵入することを防いでいる。封止層２０は、例えば窒化シリコンのような緻密な無機層や、無機層と有機層による積層膜によって形成してもよい。また、封止層２０は、特定の波長の光を吸収し、他の波長の光を透過するカラーフィルタを含む構造にしてもよい。下地層３０は、自発光素子層１０の下面に形成される。保護層４０は、ポリイミド樹脂やポリエチレンテレフタレート樹脂などの有機材料からなり、下地層３０の下面に形成される。尚、保護層４０は省略してもよい。   The sealing layer 20 seals the self light emitting element layer 10. The sealing layer 20 prevents moisture and the like from entering the self-light emitting element layer 10. The sealing layer 20 may be formed of a dense inorganic layer such as silicon nitride, or a laminated film including an inorganic layer and an organic layer. The sealing layer 20 may have a structure including a color filter that absorbs light of a specific wavelength and transmits light of other wavelengths. The underlayer 30 is formed on the lower surface of the self light emitting element layer 10. The protective layer 40 is made of an organic material such as polyimide resin or polyethylene terephthalate resin, and is formed on the lower surface of the base layer 30. The protective layer 40 may be omitted.

次に、図２を参照して、下地層３０の積層構造の詳細について説明する。図２は、下地層の積層構造の詳細を模式的に示す断面図である。下地層３０は、有機層（例えば樹脂層）と無機層が交互に少なくと２層ずつ積層した構造を採用する。このような積層構造の下地層を採用することにより、有機層と無機層を１層ずつ積層したシングル構造の下地層を採用した場合と比較してバリア性能が向上し、自発光素子層１０への水分の侵入が抑制される。   Next, the details of the laminated structure of the underlayer 30 will be described with reference to FIG. FIG. 2 is a cross-sectional view schematically showing the details of the laminated structure of the underlayer. The underlayer 30 employs a structure in which an organic layer (for example, a resin layer) and an inorganic layer are alternately stacked at least two layers. By adopting such a layered base layer, the barrier performance is improved as compared with the case of adopting a single layer base layer in which an organic layer and an inorganic layer are stacked one by one. Intrusion of moisture is suppressed.

下地層３０は、第１有機層３１（第１樹脂層）と、第１無機層３２と、第２有機層３３と、第２無機層３４とを有する。第１有機層３１、第２有機層３３の材料としては、ポリイミド樹脂やポリエチレンテレフタレート樹脂を用いるとよい。また、第１無機層３２、第２無機層３４の材料としては、例えば酸化シリコンや窒化シリコンが用いられる。或いは、第１無機層３２、第２無機層３４の材料として、チタン等、水分に強い金属を用いてもよい。尚、第１有機層３１は、フレキシブルディスプレイでガラス基板の代わりに用いる樹脂基板に相当するとも考えられる。また、第１有機層３１と、第１無機層３２と、第２有機層３３とが有機層を複数備えたフレキシブルディスプレイの基板（基材ともいう）であり、第２無機層３４が当該基板と薄膜トランジスタとの間に設けられた下地膜であるとも考えられる。   The underlayer 30 includes a first organic layer 31 (first resin layer), a first inorganic layer 32, a second organic layer 33, and a second inorganic layer 34. As a material for the first organic layer 31 and the second organic layer 33, polyimide resin or polyethylene terephthalate resin may be used. Moreover, as a material of the first inorganic layer 32 and the second inorganic layer 34, for example, silicon oxide or silicon nitride is used. Alternatively, as the material of the first inorganic layer 32 and the second inorganic layer 34, a metal resistant to moisture such as titanium may be used. The first organic layer 31 is also considered to correspond to a resin substrate used in place of a glass substrate in a flexible display. The first organic layer 31, the first inorganic layer 32, and the second organic layer 33 are flexible display substrates (also referred to as base materials) provided with a plurality of organic layers, and the second inorganic layer 34 is the substrate. And a base film provided between the thin film transistor and the thin film transistor.

第１有機層３１は、表面に凹凸が形成された粗面化上面３１ａを有する。第１有機層３１の粗面化上面３１ａは、最大高さ粗さが１０ｎｍ以上１００ｎｍ以下であり、算術平均粗さが１ｎｍ以上５ｎｍ以下であることが好ましい。なお、最大高さ粗さとは、層の厚み方向における基準位置から最も突出した位置における突出量であり、算術平均粗さとは、層の厚み方向における基準位置からの突出量の平均値である。   The first organic layer 31 has a roughened upper surface 31a having irregularities formed on the surface. The roughened upper surface 31a of the first organic layer 31 preferably has a maximum height roughness of 10 nm to 100 nm and an arithmetic average roughness of 1 nm to 5 nm. The maximum height roughness is the amount of protrusion at the position most protruding from the reference position in the thickness direction of the layer, and the arithmetic average roughness is the average value of the amount of protrusion from the reference position in the layer thickness direction.

第１無機層３２は、第１有機層３１の粗面化上面３１ａに接する粗面化した下面３２ｂと、下面３２ｂに倣った粗面化上面３２ａとを有する。   The first inorganic layer 32 has a roughened lower surface 32b in contact with the roughened upper surface 31a of the first organic layer 31, and a roughened upper surface 32a following the lower surface 32b.

第２有機層３３は、第１無機層３２の粗面化上面３２ａに密着することで粗面化した下面３３ｂを有する。第２無機層３４は、第２有機層３３の上面３３ａに密着して設けられる。第２無機層３４の上層には、図１に示す自発光素子層１０の他に、薄膜トランジスタを含む駆動回路や各種配線が形成される。図１、図２に示す様に、第２無機層３４と接する第２有機層３３は、上面（第１の面）３３ａよりも下面３３ｂ（第２の面）の方が粗い。   The second organic layer 33 has a lower surface 33 b roughened by being in close contact with the roughened upper surface 32 a of the first inorganic layer 32. The second inorganic layer 34 is provided in close contact with the upper surface 33 a of the second organic layer 33. In addition to the self-luminous element layer 10 shown in FIG. 1, a driving circuit including a thin film transistor and various wirings are formed on the second inorganic layer 34. As shown in FIGS. 1 and 2, the second organic layer 33 in contact with the second inorganic layer 34 is rougher on the lower surface 33b (second surface) than on the upper surface (first surface) 33a.

尚、図１、図２において下地層３０は、有機層と無機層が交互に２層ずつ積層した構造をしているが、これに限定されるものではない。下地層３０は、有機層と無機層が交互に少なくとも２層ずつ積層していればよく、有機層と無機層が交互に３層ずつ以上積層してもよい。   In FIGS. 1 and 2, the underlayer 30 has a structure in which two organic layers and two inorganic layers are alternately stacked. However, the present invention is not limited to this. The underlayer 30 may be formed by alternately laminating at least two organic layers and inorganic layers, or may laminate three or more organic layers and inorganic layers alternately.

次に、図３を参照して、本実施形態に係る表示装置１００の製造工程について説明する。図３（ａ）〜図３（ｄ）は、本実施形態に係る表示装置の製造工程を説明するための工程図である。   Next, with reference to FIG. 3, a manufacturing process of the display device 100 according to the present embodiment will be described. FIG. 3A to FIG. 3D are process diagrams for explaining a manufacturing process of the display device according to the present embodiment.

まず、第１有機層３１の上面が凹凸形状となるようにプラズマ処理を行うことにより、図３（ａ）に示すように粗面化上面３１ａを形成する。プラズマ処理としては、例えば、窒素プラズマ処理や酸素プラズマ処理を行うとよい。なお、粗面化上面３１ａの形成は、プラズマ処理に限られるものではなく、例えば、ナノインプリント技術を用いて行ってもよい。なお、第１有機層３１は、図示しない例えばガラス基板から成る支持基板上に形成される。その後、図１に示す自発光素子層１０等を形成した後に、第１有機層３１から公知の方法で支持基板を剥離する。第１有機層３１は、ガラス板上に液体状のワニスを塗布することにより形成してもよいし、有機材料からなる固体状のフィルムを用いてもよい。   First, the roughened upper surface 31a is formed as shown in FIG. 3A by performing plasma treatment so that the upper surface of the first organic layer 31 has an uneven shape. As the plasma treatment, for example, nitrogen plasma treatment or oxygen plasma treatment may be performed. The formation of the roughened upper surface 31a is not limited to the plasma treatment, and may be performed using, for example, a nanoimprint technique. The first organic layer 31 is formed on a support substrate made of a glass substrate (not shown). Thereafter, after forming the light emitting element layer 10 and the like shown in FIG. 1, the support substrate is peeled off from the first organic layer 31 by a known method. The first organic layer 31 may be formed by applying a liquid varnish on a glass plate, or a solid film made of an organic material may be used.

次に、第１有機層３１の粗面化上面３１ａ上に第１無機層３２を形成する。第１無機層３２の上面は、図３（ｂ）に示すように粗面化上面３１ａの形状に伴って凹凸形状となる。   Next, the first inorganic layer 32 is formed on the roughened upper surface 31 a of the first organic layer 31. The upper surface of the first inorganic layer 32 has an uneven shape with the shape of the roughened upper surface 31a as shown in FIG.

次に、図３（ｃ）に示すように、第１無機層３２の粗面化上面３２ａ上に第２有機層３３を形成する。第２有機層３３の下面３３ｂは、第１無機層３２の粗面化上面３２ａに密着することで粗面化した面となる。一方、第２有機層３３の上面３３ａは、有機材料からなるワニスを塗布することにより形成され、略平坦な面となる。   Next, as shown in FIG. 3C, the second organic layer 33 is formed on the roughened upper surface 32 a of the first inorganic layer 32. The lower surface 33 b of the second organic layer 33 becomes a roughened surface by being in close contact with the roughened upper surface 32 a of the first inorganic layer 32. On the other hand, the upper surface 33a of the second organic layer 33 is formed by applying a varnish made of an organic material and becomes a substantially flat surface.

さらに、図３（ｄ）に示すように、第２有機層３３の上面３３ａに第２無機層３４を形成する。有機層３３の上面３３ａが略平坦な面であるため、有機層３３上に形成される第２無機層３４の上面３４ａも略平坦な面となる。第２無機層３４の上面３４ａは略平坦な面であるため、下面が略平坦な面である自発光素子層１０との密着性に影響はなく、自発光素子層１０を平坦化された面の上に形成することが可能になる。   Further, as shown in FIG. 3D, the second inorganic layer 34 is formed on the upper surface 33 a of the second organic layer 33. Since the upper surface 33a of the organic layer 33 is a substantially flat surface, the upper surface 34a of the second inorganic layer 34 formed on the organic layer 33 is also a substantially flat surface. Since the upper surface 34a of the second inorganic layer 34 is a substantially flat surface, there is no effect on the adhesiveness with the self-light emitting element layer 10 whose lower surface is a substantially flat surface, and the surface on which the self-light emitting element layer 10 is flattened. It becomes possible to form on top.

なお、第２有機層３３の上面３３ａにプラズマ処理を行った上で、第２無機層３４を第２有機層３３に積層するとよい。発明者の鋭意検討により、第２有機層３３の上面３３ａに、粗面化しない程度のプラズマ処理を行うことにより、第２有機層３３と第２無機層３４の密着性が向上することが分かっている。なお、第２有機層３３の上面３３ａは粗面化していないため、第２無機層３４の下面３４ｂ及び上面３４ａも粗面化しない。   The second inorganic layer 34 may be stacked on the second organic layer 33 after performing a plasma treatment on the upper surface 33 a of the second organic layer 33. As a result of inventor's diligent study, it is found that the adhesion between the second organic layer 33 and the second inorganic layer 34 is improved by performing plasma treatment on the upper surface 33a of the second organic layer 33 so as not to be roughened. ing. Since the upper surface 33a of the second organic layer 33 is not roughened, the lower surface 34b and the upper surface 34a of the second inorganic layer 34 are not roughened.

その後、第２無機層３４上に、自発光素子層１０、封止層２０を積層する。更に、第１有機層３１の下面３１ｂに保護層４０を積層することにより、図１で示した表示装置１００となる。第１有機層３１を支持基板上に形成した場合は、支持基板を剥離した後に、第１有機層３１の下面３１ｂに保護層４０を貼り合せる。なお、保護層４０は、本実施形態の表示装置１００の最外層である。   Thereafter, the self-luminous element layer 10 and the sealing layer 20 are stacked on the second inorganic layer 34. Furthermore, by stacking the protective layer 40 on the lower surface 31b of the first organic layer 31, the display device 100 shown in FIG. 1 is obtained. When the first organic layer 31 is formed on the support substrate, the protective layer 40 is bonded to the lower surface 31b of the first organic layer 31 after the support substrate is peeled off. The protective layer 40 is the outermost layer of the display device 100 of the present embodiment.

なお、図４に示すように、第１有機層３１と保護層４０の間に熱拡散層５０を設けてもよい。熱拡散層５０を設けることにより、温度分布が分散して、表示装置が部分的に過度に高熱化することが抑制される。なお、図２、図４で示した保護層４０と熱拡散層５０は本発明の必須の構成ではない。第１有機層３１が表示装置１００の最外層であってもよい。   As shown in FIG. 4, a thermal diffusion layer 50 may be provided between the first organic layer 31 and the protective layer 40. By providing the thermal diffusion layer 50, the temperature distribution is dispersed and the display device is suppressed from being partially heated excessively. Note that the protective layer 40 and the thermal diffusion layer 50 shown in FIGS. 2 and 4 are not essential components of the present invention. The first organic layer 31 may be the outermost layer of the display device 100.

下地層として有機層と無機層が交互に２層ずつ積層した構造を採用した場合、有機層と無機層の界面の増加に伴い、膜剥がれのリスクが増大するところ、本実施形態においては、粗面化した面で第１有機層３１と第１無機層３２が密着し、粗面化した面で第１無機層３２と第２有機層３３が密着する構成を採用することにより、それぞれの層の界面における密着性が向上するため、膜剥がれが生じにくい。また、第２有機層３３の上面３３ａには、プラズマ処理がされた上で、第２無機層３４が密着されているため、第２有機層３３と第２無機層３４の界面における密着性が向上し、膜剥がれが生じにくい。   When adopting a structure in which two organic layers and two inorganic layers are alternately laminated as the underlayer, the risk of film peeling increases with an increase in the interface between the organic layer and the inorganic layer. By adopting a configuration in which the first organic layer 31 and the first inorganic layer 32 are in close contact with each other on the surface and the first inorganic layer 32 and the second organic layer 33 are in close contact with each other on the roughened surface. Since the adhesion at the interface of the film is improved, film peeling hardly occurs. In addition, since the second inorganic layer 34 is in close contact with the upper surface 33a of the second organic layer 33 after the plasma treatment, the adhesion at the interface between the second organic layer 33 and the second inorganic layer 34 is improved. And film peeling is less likely to occur.

また、一方又は両方の表面に凹凸が形成される第１有機層３１、第１無機層３２、第２有機層３３は、表面に凹凸が形成される分、内部応力が低くなっている。そのため、特に、画像表示部を柔軟に湾曲可能なフレキシブル表示装置に本実施形態の構成を適用することにより、各層の曲げ耐久性が向上し、各層が互いに剥がれにくいという効果を発揮する。   Further, the first organic layer 31, the first inorganic layer 32, and the second organic layer 33 in which unevenness is formed on one or both surfaces have low internal stress due to the formation of unevenness on the surface. Therefore, in particular, by applying the configuration of the present embodiment to a flexible display device that can bend the image display portion flexibly, the bending durability of each layer is improved, and the effect that each layer is difficult to peel off from each other is exhibited.

１０ 自発光素子層、１１ 発光層、１２ 下部電極、１３ 上部電極、１４ａ，１４ｂ 絶縁層、１５ ソースドレイン電極、１６ 絶縁層、１７ａ ゲート線層、１７ｂ ポリシリコン層１７ｂ、１８ ソースドレイン領域、１９ バンク、２０ 封止層、３０ 下地層、３１ 第１有機層、３１ａ 粗面化上面、３１ｂ 下面、３２ 第１無機層、３２ａ 粗面化上面、３２ｂ 下面、３３ 第２有機層、３３ａ 上面、３３ｂ 下面、３４ 第２無機層、３４ａ 上面、３４ｂ 下面、４０ 保護層、５０ 熱拡散層、１００ 表示装置。   DESCRIPTION OF SYMBOLS 10 Self-light emitting element layer, 11 Light emitting layer, 12 Lower electrode, 13 Upper electrode, 14a, 14b Insulating layer, 15 Source / drain electrode, 16 Insulating layer, 17a Gate line layer, 17b Polysilicon layer 17b, 18 Source / drain region, 19 Bank, 20 Sealing layer, 30 Underlayer, 31 First organic layer, 31a Roughened upper surface, 31b Lower surface, 32 First inorganic layer, 32a Roughened upper surface, 32b Lower surface, 33 Second organic layer, 33a Upper surface, 33b lower surface, 34 second inorganic layer, 34a upper surface, 34b lower surface, 40 protective layer, 50 heat diffusion layer, 100 display device.

Claims (10)

粗面化上面を有する第１有機層と、
前記第１有機層の前記粗面化上面に接する粗面化した下面と、該下面に倣った粗面化上面とを有する第１無機層と、
前記第１無機層の前記粗面化上面に接する粗面化した下面と、該下面よりも平坦な上面とを有する第２有機層と、
前記第２有機層の上面に接する第２無機層と、
前記第２無機層の上層に配置された薄膜トランジスタと、
を有し、
前記第１有機層は、粗面化上面とは反対側の面である下面を有し、
前記第１有機層の前記下面には、樹脂からなる保護層が配置されている、
ことを特徴とする表示装置。 A first organic layer having a roughened top surface;
A first inorganic layer having a roughened lower surface in contact with the roughened upper surface of the first organic layer, and a roughened upper surface following the lower surface;
A second organic layer having a roughened lower surface in contact with the roughened upper surface of the first inorganic layer, and an upper surface flatter than the lower surface;
A second inorganic layer in contact with the upper surface of the second organic layer;
A thin film transistor disposed in an upper layer of the second inorganic layer;
Have
The first organic layer has a lower surface that is a surface opposite to the roughened upper surface;
A protective layer made of a resin is disposed on the lower surface of the first organic layer.
A display device characterized by that. 粗面化上面を有する第１有機層と、
前記第１有機層の前記粗面化上面に接する粗面化した下面と、該下面に倣った粗面化上面とを有する第１無機層と、
前記第１無機層の前記粗面化上面に接する粗面化した下面と、該下面よりも平坦な上面とを有する第２有機層と、
前記第２有機層の上面に接する第２無機層と、
前記第２無機層の上層に配置された薄膜トランジスタと、
を有し、
前記第１有機層は、粗面化上面とは反対側の面である下面を有し、
前記第１有機層の前記下面には、熱拡散シートが配置され、
前記熱拡散シートの、前記第１有機層の前記下面とは反対側の面には、樹脂からなる保護層が配置されていることを特徴とする表示装置。 A first organic layer having a roughened top surface;
A first inorganic layer having a roughened lower surface in contact with the roughened upper surface of the first organic layer, and a roughened upper surface following the lower surface;
A second organic layer having a roughened lower surface in contact with the roughened upper surface of the first inorganic layer, and an upper surface flatter than the lower surface;
A second inorganic layer in contact with the upper surface of the second organic layer;
A thin film transistor disposed in an upper layer of the second inorganic layer;
Have
The first organic layer has a lower surface that is a surface opposite to the roughened upper surface;
A heat diffusion sheet is disposed on the lower surface of the first organic layer,
A display device, wherein a protective layer made of a resin is disposed on a surface of the thermal diffusion sheet opposite to the lower surface of the first organic layer. 請求項１又は２に記載された表示装置において、
前記第２無機層の上層には、前記薄膜トランジスタと接続する下部電極と、前記下部電極上に配置された発光層と、前記発光層上に配置された上部電極とが備えられていることを特徴とする表示装置。 The display device according to claim 1 or 2 ,
The upper layer of the second inorganic layer includes a lower electrode connected to the thin film transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer. Display device. 請求項１から３のいずれか１項に記載された表示装置において、
前記第１有機層の前記上面の最大高さ粗さは、１０ｎｍ以上１００ｎｍ以下であることを特徴とする表示装置。 The display device according to any one of claims 1 to 3 ,
The maximum height roughness of the upper surface of the first organic layer is 10 nm or more and 100 nm or less. 請求項１から４のいずれか１項に記載された表示装置において、
前記第１有機層の前記上面の算術平均粗さは、１ｎｍ以上５ｎｍ以下であることを特徴とする表示装置。 The display device according to any one of claims 1 to 4 ,
The arithmetic average roughness of the upper surface of the first organic layer is 1 nm or more and 5 nm or less. 請求項１から５のいずれか１項に記載された表示装置において、
前記第２有機層の前記上面は、平坦であることを特徴とする表示装置。 The display device according to any one of claims 1 to 5 ,
Wherein the upper surface of the second organic layer, the display characterized in that it is a Tan Taira device. 請求項１から６のいずれか１項に記載された表示装置において、
前記第２無機層の前記薄膜トランジスタの側に位置する表面は、前記第２有機層の前記下面よりも平坦であることを特徴とする表示装置。 The display device according to any one of claims 1 to 6 ,
The display device, wherein a surface of the second inorganic layer located on the thin film transistor side is flatter than the lower surface of the second organic layer. 基板と、
前記基板上に形成された無機材料から成る下地膜と、
前記下地膜上に形成された薄膜トランジスタと、を有し、
前記基板は、複数の樹脂層が間に無機層を挟んで積層した積層構造からなり、
前記複数の樹脂層のうち前記下地膜と接する樹脂層は、前記下地膜側に位置する第１の面と、前記第１の面とは反対側の第２の面とを有し、
前記第２の面は、前記第１の面よりも粗く、
前記基板の前記薄膜トランジスタとは反対側の最外層は、複数の樹脂層の内の一つであり、
前記最外層の前記下地膜とは反対側の面には、樹脂で形成された保護フィルムが配置されていることを特徴とする表示装置。 A substrate,
A base film made of an inorganic material formed on the substrate;
A thin film transistor formed on the base film,
The substrate has a laminated structure in which a plurality of resin layers are laminated with an inorganic layer in between
Of the plurality of resin layers, the resin layer in contact with the base film has a first surface located on the base film side and a second surface opposite to the first surface,
The second surface is rougher than the first surface,
The outermost layer on the opposite side of the substrate from the thin film transistor is one of a plurality of resin layers,
A display device, wherein a protective film made of a resin is disposed on a surface of the outermost layer opposite to the base film. 請求項８に記載された表示装置において、
前記基板は、前記第２の面に接する第１無機層と、前記第１無機層と前記第２の面とは反対側で接する第１樹脂層とを含み、
前記第１樹脂層の前記第１無機層と接する面は、前記第１の面よりも粗いことを特徴とする表示装置。 The display device according to claim 8 ,
The substrate includes a first inorganic layer in contact with the second surface, and a first resin layer in contact with the first inorganic layer on the side opposite to the second surface,
The display device according to claim 1, wherein a surface of the first resin layer in contact with the first inorganic layer is rougher than the first surface. 請求項８又は９に記載された表示装置において、
前記基板は可撓性を有することを特徴とする表示装置。 The display device according to claim 8 or 9 ,
The display device is characterized in that the substrate has flexibility.
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