JP5115356B2 - Piezoelectric ceramic and piezoelectric element - Google Patents

Description

  The present invention relates to a piezoelectric ceramic and a piezoelectric element.

The piezoelectric ceramic for use in an actuator which is one of piezoelectric devices, the piezoelectric strain constant is large, it mechanical quality factor Q _m is small, and the specific resistance is required larger. Conventionally, as a piezoelectric ceramic capable of obtaining a large piezoelectric strain constant, for example, lead titanate (PbTiO ₃ ) (hereinafter sometimes referred to as “PT”) and lead zirconate (PbZrO ₃ ) (hereinafter sometimes referred to as “ PZ ”) and cobalt niobate lead (Pb (Co _1/3 Nb _2/3 ) O ₃ ) (hereinafter sometimes referred to as“ PCN ”) are blended. There is known one in which a part of lead (Pb) of porcelain or ternary piezoelectric ceramic is replaced with calcium (Ca), strontium (Sr), barium (Ba) or the like (Patent Documents 1 and 2 below) reference).
Japanese Patent No. 3761355 JP 2007-22841 A

  In the case of producing a laminated piezoelectric element having a conventional piezoelectric ceramic as a piezoelectric layer, it is necessary to fire the piezoelectric layer and the internal electrode at a high temperature (eg, about 1200 ° C.) at which the piezoelectric ceramic is sintered. was there. Therefore, an expensive noble metal such as platinum (Pt) or palladium (Pd) having a high melting point must be used for the internal electrode, which raises a problem that the manufacturing cost of the multilayer piezoelectric element increases. In order to reduce the manufacturing cost, it is conceivable to use a cheaper silver-palladium (Ag—Pd) alloy for the internal electrode, but the melting point of the silver-palladium alloy is lower than that of platinum or palladium. There has been a demand for a piezoelectric ceramic that sinters at a temperature lower than the melting point of the Ag-Pd alloy. For example, Patent Document 2 discloses a piezoelectric ceramic composition that enables a silver-palladium alloy to be used as an internal electrode.

  Since Pd is more expensive than Ag, it is desirable to lower the Pd content in the Ag—Pd alloy in order to reduce manufacturing costs. However, the lower the Pd content, the lower the melting point of the alloy. Therefore, in order to reduce the Pd content, a piezoelectric ceramic that is sintered at a lower firing temperature is required. For example, in order to make the Pd content 30 wt% or less, the firing temperature needs to be 1150 ° C. or less, preferably 1120 ° C. or less. Further, when the Pd content is 20 wt% or less, it is desired to lower the firing temperature to 1100 ° C. or less, preferably 1150 ° C. or less.

  Recently, it has been studied to use copper (Cu), which is cheaper than the Ag—Pd alloy, for the internal electrode instead of the above-described Ag—Pd alloy. However, since the melting point of Cu is 1085 ° C., which is lower than the melting point of the Ag—Pd alloy, in order to use Cu, the firing temperature needs to be lower than the melting point of Cu (for example, 1050 ° C. or less). In addition, since Cu has a property of starting sintering from a temperature lower than the melting point, considering this point, the firing temperature needs to be 980 ° C. or lower, for example. Furthermore, since Cu is a base metal, it is oxidized when fired in the atmosphere and cannot be used as an internal electrode. Therefore, when a multilayer piezoelectric element using Cu as an internal electrode is manufactured, firing at a low temperature in a low oxygen atmosphere (reducing atmosphere) is required.

However, when a piezoelectric element having a piezoelectric layer including a conventional piezoelectric ceramic and an internal electrode made of Cu is obtained by firing at a low temperature in a reducing atmosphere, the piezoelectric strain constant does not increase sufficiently, may not become quality factor Q _m is sufficiently small, specific resistance tended to or off if sufficiently large.

  The present invention has been made in view of the above problems, and provides a piezoelectric ceramic that can obtain a large piezoelectric strain constant, a small mechanical quality factor, and a large specific resistance, and a piezoelectric element including the piezoelectric ceramic. The purpose is to do.

In order to achieve the above object, the piezoelectric ceramic of the present invention comprises a main component composed of a complex oxide having a perovskite structure,
A sintered body containing a first subcomponent comprising at least one element R2 selected from the group consisting of Dy, Gd and Y and at least one element R3 selected from the group consisting of Ta, Nb and W With
Complex oxide
(Pb _1-xy Me _x ) [(Co _1/3 Nb _2/3 ) _a Ti _b Zr _c ] O ₃
[Wherein, Me represents at least one selected from the group consisting of Ca, Sr and Ba. ]
Having a composition represented by
0 <1-xy, 0 ≦ x ≦ 0.05,
0 ≦ y ≦ 0.05,
a + b + c = 1,
0.05 ≦ a ≦ 0.1,
0 <b <1,
0 <c <1, and 0.753 ≦ (b / c) × (1-a) ≦ 0.900,
It is characterized in that Cu elements are unevenly distributed at the grain boundaries of the sintered body.

  In the present invention, since the main component and the first subcomponent have the above composition, and the Cu element is unevenly distributed at the grain boundaries of the sintered body, the piezoelectric strain constant is increased as compared with the conventional piezoelectric ceramic. The mechanical quality factor can be decreased and the specific resistance can be increased.

In the present invention,
_{Pb {(R2) d (R3} ) e} O 3
[Where d + e = 1, 0 <d <1, 0 <e <1. ]
It is preferable that content of the 1st subcomponent converted into the compound represented by these is larger than 0 mol and below 0.6 mol with respect to 100 mol of main components. This makes it easier to obtain the effects of the present invention.

  The present invention preferably satisfies 0 <y ≦ 0.03. Thereby, it is possible to further improve the piezoelectric characteristics.

  The present invention contains a second subcomponent containing at least one element R1 selected from the group consisting of Ta, Nb and W, and the content of the second subcomponent converted to the element R1 is 100 mol of the main component. It is preferably greater than 0 mol and less than or equal to 0.9 mol. This makes it easier to obtain the effect of increasing the piezoelectric strain constant.

  A piezoelectric element of the present invention includes a piezoelectric layer including the piezoelectric ceramic of the present invention, and a plurality of internal electrodes including Cu and stacked via the piezoelectric layer. In the manufacture of the piezoelectric element, when the precursor of the piezoelectric layer and the precursor of the internal electrode are baked in a laminated state, the Cu element is thermally diffused from the precursor of the internal electrode to the precursor of the piezoelectric layer during firing. Cu elements are likely to be unevenly distributed at the grain boundaries of the piezoelectric ceramic included in the piezoelectric layer obtained after firing, and the specific resistance is likely to be increased.

  According to the present invention, it is possible to provide a piezoelectric ceramic that makes it possible to obtain a large piezoelectric strain constant, a small mechanical quality factor, and a large specific resistance, and a piezoelectric element including the piezoelectric ceramic.

  Hereinafter, a piezoelectric ceramic according to a preferred embodiment of the present invention and a laminated piezoelectric actuator (hereinafter referred to as “actuator”) which is an example of a piezoelectric element using the piezoelectric ceramic will be described in detail. However, the present invention is not limited to the following embodiments.

  FIG. 1 is a schematic cross-sectional view obtained by cutting the actuator 10 of this embodiment in the stacking direction. As shown in FIG. 1, the actuator 10 is stacked on a plurality of piezoelectric layers 2, a plurality of internal electrodes 1 a and 1 b stacked via the piezoelectric layers 2, and an outermost layer of the piezoelectric layers 2. Protective layers (outer piezoelectric layers) 3a and 3b, and a pair of external electrodes (terminal electrodes) provided on both sides of the laminate comprising the piezoelectric layer 2, the internal electrodes 1a and 1b, and the protective layers 3a and 3b. 4a and 4b. Of the adjacent internal electrodes 1a and 1b, one internal electrode 1a is connected to one external electrode 4a, and the other internal electrode 1b is connected to the other external electrode 4b. The external electrodes 4a and 4b are electrically connected to an external power source (not shown) via, for example, a lead wire (not shown).

  The internal electrodes 1a and 1b contain Cu as a main component. The Cu content in the internal electrodes 1a and 1b is about 50 to 100% by mass. Further, the internal electrodes 1a and 1b may further contain, for example, Ni as a subcomponent. When the internal electrodes 1a and 1b contain Ni, the melting points of the internal electrodes 1a and 1b can be increased. The external electrodes 4a and 4b are made of a conductor such as Cu.

  The thickness per layer of the piezoelectric layer 2 is, for example, 1 to 200 μm, preferably 20 to 150 μm, and more preferably 50 to 100 μm. Further, the number of stacked piezoelectric layers 2 is determined according to the target displacement of the actuator 10. The thickness per layer of the internal electrodes 1a and 1b is, for example, 0.5 to 5 μm. Moreover, although the thickness of the external electrodes 4a and 4b is appropriately determined according to the use or the like, it is usually 10 to 50 μm.

  The piezoelectric layer 2 includes the piezoelectric ceramic according to the present embodiment. The piezoelectric ceramic according to the present embodiment includes a sintered body containing a main component and a first subcomponent. The content of the main component is 98 to 100% by mass with respect to the whole piezoelectric ceramic.

The main component of the piezoelectric ceramic is composed of a complex oxide having a perovskite structure and has a composition represented by the following chemical formula (1).
(Pb _1-xy Me _x ) [(Co _1/3 Nb _2/3 ) _a Ti _b Zr _c ] O ₃ (1)
In the chemical formula (1), Me represents at least one selected from the group consisting of Ca, Sr and Ba.

The composite oxide satisfies 0 <1-xy. That is, Pb is arranged at least at part of the A site of the composite oxide having a perovskite structure represented by the general formula ABO ₃ (A and B are arbitrary elements).

  The composite oxide satisfies 0 ≦ x ≦ 0.05. That is, a part of Pb arranged at the A site of the composite oxide is replaced by the element Me. Thereby, the effect of suppressing the evaporation of Pb during the firing of the piezoelectric ceramic and increasing the piezoelectric strain constant can be obtained. When x is 0, the effect of increasing the piezoelectric strain constant tends to be small, and when x exceeds 0.05, the effect of increasing the piezoelectric strain constant tends to be small under high voltage.

  The composite oxide satisfies 0 ≦ y ≦ 0.05. The composite oxide preferably satisfies 0 <y ≦ 0.03. That is, the Pb mol ratio at the A site may be a stoichiometric ratio or may deviate from the stoichiometric ratio. By shifting the molar ratio of Pb at the A site from the stoichiometric ratio within the above range, the piezoelectric characteristics can be further improved. When y is 0, the piezoelectric ceramic tends to shrink rapidly during sintering, and the piezoelectric ceramic tends to be difficult to mass-produce. When y exceeds 0.03, the piezoelectric ceramic tends to be difficult to sinter at low temperatures. is there.

The composite oxide satisfies a + b + c = 1, 0.05 ≦ a ≦ 0.1 , 0 <b <1, and 0 <c <1. In other words, (Co _1/3 Nb _2/3 ), Ti and Zr are arranged at the B site of the composite oxide, and these elements arranged at the B site satisfy the stoichiometric ratio.

The composite oxide satisfies 0.05 ≦ a ≦ 0.1. Thereby, the piezoelectric strain constant of the piezoelectric ceramic can be increased. When a is 0, the piezoelectric strain constant tends to be small. Or if a exceeds 0.1, there is a tendency that the piezoelectric strain constant decreases, also tend sinterability of the piezoelectric ceramic Curie temperature is too low in piezoelectric ceramic deteriorates there Ru.

  The composite oxide satisfies 0.753 ≦ (b / c) × (1-a) ≦ 0.900. Note that (b / c) × (1-a) means that when the composite oxide is regarded as a ternary piezoelectric ceramic aPCN + bPT + cPZ composed of three components of PCN, PT, and PZ, the composition ratio ( mol ratio) is a value derived from a, b and c. By setting (b / c) × (1-a) within the above range, the composite oxide has a composition near the morphotropic phase boundary, so that the piezoelectric strain constant of the piezoelectric ceramic can be increased. . When (b / c) × (1-a) is less than 0.753, the sinterability of the piezoelectric ceramic is lowered, and a sintered body (piezoelectric ceramic) having a sufficient sintered density tends not to be obtained. There is. When (b / c) × (1-a) is larger than 0.900, the piezoelectric characteristics tend to deteriorate. From the same viewpoint, it is preferable that 0.82 ≦ (b / c) × (1−a) ≦ 0.88.

  The first subcomponent of the piezoelectric ceramic includes at least one element R2 selected from the group consisting of Dy, Gd, and Y and at least one element R3 selected from the group consisting of Ta, Nb, and W.

Content of the first subcomponent converted to the compound represented by the chemical formula Pb {(R2) _d (R3) _e } O ₃ (where d + e = 1, 0 <d <1, 0 <e <1). Is preferably greater than 0 mol and less than or equal to 0.6 mol with respect to 100 mol of the main component. In other words, the content of the first subcomponent converted to Pb {(R2) _d (R3) _e } O ₃ having a perovskite structure is greater than 0 parts by mass and greater than 0.3 parts by mass with respect to 100 parts by mass of the main component Part or less. This makes it easier to obtain the effects of the present invention. When the mol ratio of the first subcomponent is 0 mol with respect to 100 mol of the main component, sufficient piezoelectric characteristics tend not to be obtained, and the mol ratio of the first subcomponent is larger than 0.6 mol with respect to 100 mol of the main component. In this case, the sinterability of the piezoelectric ceramic is lowered, and there is a tendency that a sintered body (piezoelectric ceramic) having a sufficient sintered density cannot be obtained. Note that the molar ratio between the element R2 and the element R3 may be set as appropriate so that the average valence of the element R2 and the element R3 is 4.

  The piezoelectric ceramic contains a second subcomponent including at least one element R1 selected from the group consisting of Ta, Nb and W, and the content of the second subcomponent converted to the element R1 is 100 mol of the main component. It is preferably greater than 0 mol and not greater than 0.9 mol. In other words, the content of the second subcomponent converted to the oxide of the element R1 is preferably greater than 0 parts by mass and less than or equal to 0.6 parts by mass with respect to 100 parts by mass of the main component. Thereby, it becomes easy to obtain the effect of increasing the piezoelectric strain constant, and the mechanical strength of the piezoelectric ceramic can be improved. When the molar ratio of the second subcomponent is larger than 0.9 mol with respect to 100 mol of the main component, the sinterability of the piezoelectric ceramic is lowered and the effect of increasing the piezoelectric strain constant tends to be reduced.

  Cu elements are unevenly distributed at the grain boundaries of the sintered body included in the piezoelectric ceramic. That is, the sintered body included in the piezoelectric ceramic has a plurality of particles including a main component and a first subcomponent, and Cu elements are unevenly distributed at the grain boundaries of the particles. As a result, the specific resistance can be increased and the mechanical strength of the piezoelectric ceramic can be improved. Note that “the Cu element is unevenly distributed at the grain boundaries of the sintered body” means that, for example, when the vicinity of the grain boundary is analyzed by EPMA (Electron Probe Micro Analyzer), the grain boundary (between particles) is This means that Cu is not detected in a region where the Cu element is detected and the distance from the particle surface to the center of the particle is 5 nm or more. In addition, the Cu element unevenly distributed in the grain boundary may be segregated as a metal or segregated as an oxide.

  Next, an example of a method for manufacturing the actuator 10 will be described.

  First, a piezoelectric ceramic starting material (piezoelectric ceramic material composition) included in the piezoelectric layer 2 is prepared. The piezoelectric ceramic raw material composition includes a main component starting material, a first subcomponent starting material, and a second subcomponent starting material.

As starting materials for the main components, oxides of each element constituting the composite oxide (main component) of the perovskite structure represented by the above chemical formula (1) and / or compounds that become these oxides after firing (carbonates) Hydroxide, oxalate, nitrate, etc.). PbO, CaO, SrO, BaO, CoO, Nb ₂ O ₅ , TiO ₂ , ZrO ₂ or the like may be used as a specific starting material for the main component. Each of these starting materials is blended in such a ratio that a composite oxide having a composition represented by the above chemical formula (1) is formed after firing.

As specific starting materials for the first subcomponent, Dy ₂ O ₃ , Gd ₂ O ₃ , Y ₂ O ₃ , Ta ₂ O ₅ , Nb ₂ O ₅ , WO _{3 and the} like may be used. These first subcomponent each raw material, the piezoelectric ceramic obtained after firing, the chemical formula Pb {(R2) d (R3 ) e} content of the first subcomponent in terms of the compound represented by O _3, the main It mix | blends with the raw material of a main component in the ratio which will be larger than 0 mol and below 0.6 mol with respect to 100 mol of components.

As a specific starting material for the second subcomponent, Ta ₂ O ₅ , Nb ₂ O ₅ , WO ₃ or the like may be used. In a piezoelectric ceramic obtained after firing the raw materials of these second subcomponents, the ratio of the content of the second subcomponent converted to element R1 is greater than 0 mol and less than or equal to 0.9 mol with respect to 100 mol of the main component And blended into the raw material of the main component.

  As described above, in the present embodiment, the content of each element contained in the piezoelectric ceramic raw material composition is substantially the same as the content of each element contained in the piezoelectric ceramic obtained by firing the piezoelectric ceramic raw material composition. The same may be done. In addition, the average particle diameter of each starting material of a main component, a 1st subcomponent, and a 2nd subcomponent is about 0.5-10 micrometers.

  Next, the blended main component, first subcomponent and second subcomponent are wet pulverized and mixed using, for example, a ball mill to obtain a raw material mixture. The obtained raw material mixture is dried and, for example, calcined at a temperature of 750 to 950 ° C. for 1 to 6 hours. This preliminary firing may be performed in the air, or may be performed in an atmosphere having a higher oxygen partial pressure than the air or in a pure oxygen atmosphere.

  The raw material mixture after calcination is wet pulverized and mixed in, for example, a ball mill to obtain a calcination powder. Next, the calcined powder is wet pulverized using, for example, a ball mill, and a solvent is added thereto to obtain a slurry. As the solvent, water, alcohol such as ethanol, or a mixed solvent of water and ethanol can be used. In addition, the wet pulverization is preferably performed until the average particle size of the calcined powder becomes about 0.5 to 2.0 μm.

  Next, the slurry is dispersed in an organic vehicle to obtain a piezoelectric layer paste. The organic vehicle is obtained by dissolving a binder in an organic solvent. The binder used for the organic vehicle is not particularly limited, and may be appropriately selected from ordinary various binders such as ethyl cellulose, polyvinyl butyral, and acrylic. In addition, the organic solvent used in the organic vehicle is not particularly limited, and terpineol, butyl carbitol, acetone, toluene, MEK depending on the method used for forming the piezoelectric layer (for example, printing method, sheet forming method, etc.). What is necessary is just to select suitably from organic solvents, such as (methyl ethyl ketone) and a terpineol. In addition, when the piezoelectric layer paste is used as a water-based paint, a water-based vehicle in which a water-soluble binder, a dispersant, or the like is dissolved in water and a pre-fired powder may be kneaded. The water-soluble binder used in the water-based vehicle is not particularly limited, and for example, polyvinyl alcohol, cellulose, water-soluble acrylic resin, etc. may be used.

  Next, an internal electrode paste is prepared by kneading the above-mentioned organic vehicle with various oxides, organometallic compounds, resinates, and the like that become conductive materials containing Cu as a main component or conductive materials containing Cu after firing. . Similarly to the internal electrode paste, an external electrode paste is also produced. If necessary, the same components as the piezoelectric ceramic used for the piezoelectric layer may be added to the internal electrode paste in order to reduce the shrinkage of the internal electrode during firing and to prevent the internal electrode and the piezoelectric layer from peeling off. May be added. The conductive material of the internal electrode may further contain Ni as a subcomponent in addition to the main component Cu. This increases the melting point of the conductive material. However, Cu is less susceptible to oxidation than piezoelectric ceramic raw material compositions, whereas Ni is more likely to oxidize than piezoelectric ceramic raw material compositions, so the Ni content in the conductive material suppresses oxidation of the conductive material. It is preferable that the amount is as large as possible. For example, an alloy containing 90% by mass of Cu and 10% by mass of Ni may be used as the conductive material.

  The binder content in each of the piezoelectric layer paste, the internal electrode paste, and the external electrode paste may be, for example, about 5 to 10% by mass, and the content of the solvent (organic solvent or water) may be 10 to 10%. What is necessary is just about 50 mass%. Each paste may contain an additive selected from various dispersants, plasticizers, dielectrics, insulators and the like as necessary.

  Next, as shown below, a green chip is produced using a printing method. First, the piezoelectric layer paste is printed on a substrate such as polyethylene terephthalate with a predetermined thickness to form a green state protective layer precursor (protective layer precursor). On the protective layer precursor, the internal electrode paste is printed in a predetermined pattern to form a green state internal electrode 1a precursor (first internal electrode precursor). A piezoelectric layer paste is printed at a predetermined thickness on the first internal electrode precursor to form a green piezoelectric layer (piezoelectric layer precursor). On the piezoelectric layer precursor, the internal electrode paste is printed in a predetermined pattern to form a green internal electrode 1b precursor (second internal electrode precursor). On the second internal electrode precursor, a piezoelectric layer paste is printed at a predetermined thickness to form a green piezoelectric layer (piezoelectric layer precursor). In this way, a plurality of first internal electrode precursors and second internal electrode precursors are stacked via the piezoelectric layer. The first internal electrode precursor is formed so as to be exposed on one of the opposed end surfaces of the laminate, and the second internal electrode precursor is formed so as to be exposed on the other end surface. After such lamination is repeated a predetermined number of times, the piezoelectric layer paste is printed with a predetermined thickness on the first internal electrode precursor or the second internal electrode precursor located on the surface side of the laminate to protect it. A layer precursor is formed to obtain a laminate. Next, the laminated body is pressurized in the laminating direction while being heated, and each layer is pressure-bonded, and then cut into a predetermined shape to obtain a green chip. In addition to the printing method described above, a sheet forming method may be used as a green chip creation method.

Next, the green chip is subjected to binder removal processing (heat treatment). The atmosphere of the binder removal treatment needs to be appropriately determined according to the composition of the conductive material in the first and second internal electrode precursors. For example, when a noble metal is used as the conductive material, the binder removal treatment may be performed in the atmosphere, an atmosphere having a higher oxygen partial pressure than the atmosphere, or a pure oxygen atmosphere. However, when Cu or Ni is used as the conductive material, it is necessary to suppress the oxidation of the conductive material during the binder removal treatment, so that the green chip is subjected to the binder removal treatment in a low oxygen atmosphere (reducing atmosphere). Is preferred. Further, in the binder removal treatment, it is necessary to suppress reduction of an oxide (for example, PbO) contained in the piezoelectric layer precursor. Therefore, when Cu is used as the conductive material as in this embodiment, the oxidation of Cu is suppressed and the reduction of PbO is based on the equilibrium oxygen partial pressure of Cu and Cu ₂ O and the equilibrium oxygen partial pressure of Pb and PbO. It is preferable to set a reducing atmosphere so that the above can be suppressed.

  The temperature of the binder removal process is about 300 ° C to 650 ° C. Moreover, although it is necessary to determine suitably the time of a binder removal process according to the temperature and atmosphere of a binder removal process, it is about 0.5 to 50 hours.

  After the binder removal treatment, the green chip is fired. Thereby, the piezoelectric ceramic raw material composition contained in the piezoelectric layer precursor and the protective layer precursor is almost completely sintered to form the piezoelectric layer 2 and the protective layers 3a and 3b including the piezoelectric ceramic of the present embodiment. Is done. Moreover, by baking, the first and second internal electrode precursors are also sintered to form internal electrodes 1a and 1b.

When using Cu as a conductive material for the internal electrode, it is preferable to fire the green chip in a low oxygen atmosphere (reducing atmosphere). The oxygen partial pressure of the low oxygen atmosphere (reducing atmosphere) is preferably 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm (1.01325 × 10 ^{−5 to} 1.01325 × 10 ⁻¹ Pa), More preferably, the pressure is 1 × 10 ⁻⁹ to 1 × 10 ⁻⁸ atm (1.01325 × 10 ^{−4 to} 1.01325 × 10 ⁻³ Pa). When the oxygen partial pressure is less than 1 × 10 ⁻¹⁰ atm, an oxide (for example, PbO) contained in the piezoelectric layer precursor and the protective layer precursor is reduced and precipitated as metal Pb, and the fired body obtained after firing (piezoelectric). The piezoelectric properties of the body layer and the protective layer tend to be reduced. On the other hand, when the oxygen partial pressure exceeds 1 × 10 ⁻⁶ atm, when Cu is used as the conductive material of the internal electrode, Cu tends to be oxidized during firing.

  The firing temperature is preferably 800 to 1050 ° C, more preferably 850 to 1000 ° C, and further preferably 900 to 980 ° C. In addition, according to the piezoelectric ceramic composition of the present embodiment, a sufficiently dense sintered body of the piezoelectric ceramic (piezoelectric layer 2 and protective layers 3a and 3b) can be obtained even at a temperature of 900 to 980 ° C. When the firing temperature is less than 800 ° C., the piezoelectric layer precursor does not sufficiently sinter. When the firing temperature exceeds 1050 ° C., the conductive material contained in the internal electrode precursors 1a and 1b is easily melted. Tend to be.

  Note that the binder removal treatment may be performed independently of the firing, or the binder removal treatment and the firing may be performed continuously. In the case where the binder removal processing and firing are performed continuously, the binder removal processing may be performed during the firing temperature increase process. In the case where a noble metal such as an Ag—Pd alloy is used as the conductive material, the green chip may be fired in the air.

  The end face of the green chip after firing is polished by, for example, barrel polishing or sand blasting, and the external electrodes 4a and 4b are formed by printing external electrode paste on the end face after polishing. In this way, the actuator 10 shown in FIG. 1 is obtained. Instead of printing the external electrode paste on the end face after polishing, the external electrodes 4a and 4b are attached by baking the external electrode paste on the end face after polishing and sputtering of the material constituting the external electrodes 4a and 4b. It may be formed.

  In the present embodiment, the main component and the first subcomponent of the piezoelectric ceramic have the above composition, and the Cu element is unevenly distributed at the grain boundary of the piezoelectric ceramic. Therefore, under a high applied voltage of about 1 to 2 kV / mm. Compared to conventional piezoelectric ceramics, the piezoelectric strain constant can be increased, the mechanical quality factor can be decreased, and the specific resistance can be increased. Further, the actuator 10 including such a piezoelectric ceramic in the piezoelectric layer 2 can obtain a sufficient displacement when driven under a high voltage. Such an actuator 10 is suitable as a fuel injection actuator, for example.

  In this embodiment, since the piezoelectric ceramic has the above composition, even when the green chip is fired at a temperature lower than the melting point of Cu (for example, a temperature of 980 ° C. or lower) in a low oxygen atmosphere (reducing atmosphere), The actuator 10 having high piezoelectric characteristics under high voltage can be obtained. Further, by burning the green chip in a low oxygen atmosphere (reducing atmosphere) at a temperature lower than the melting point of Cu, Cu contained in the internal electrode precursors 1a and 1b is thermally diffused into the piezoelectric layer precursor. Therefore, Cu elements are unevenly distributed at the grain boundaries of the piezoelectric ceramic contained in the piezoelectric layer 2 obtained after firing, and the specific resistance of the piezoelectric ceramic increases. In a conventional actuator using a piezoelectric ceramic, oxygen defects are formed at the grain boundaries of the piezoelectric ceramic included in the piezoelectric layer, so that the specific resistance is reduced to, for example, about 1/100 compared to this embodiment. Resulting in.

  The preferred embodiments of the piezoelectric ceramic and actuator 10 according to the present invention have been described above, but the present invention is not necessarily limited to the above-described embodiments.

  For example, the content of each element (for example, oxygen) in the chemical formula (1) is determined stoichiometrically, and in a piezoelectric ceramic obtained by actual firing, there is a deviation from the stoichiometric composition. Such a case may occur, but such a case is also included in the present invention.

Further, as described above, the Cu element unevenly distributed at the grain boundary of the piezoelectric ceramic may be Cu thermally diffused from the first and second internal electrode precursors to the piezoelectric layer precursor during firing, It may be derived from a compound (for example, Cu ₂ O) added to the starting material (piezoelectric ceramic material composition). Further, both of these cases may be used.

  Moreover, in the said embodiment, although the starting material of the 1st subcomponent and the 2nd subcomponent was added to the starting material of the main component before temporary baking, it may be added to the starting material of the main component after temporary baking. Good. However, it is preferable to add the starting materials of the first subcomponent and the second subcomponent to the starting material of the main component prior to the preliminary firing. This makes it easier to obtain a uniform piezoelectric layer 2. In addition, when adding the starting material of a 1st subcomponent and a 2nd subcomponent to the starting material of the main component after temporary baking, it is preferable to use an oxide as a starting material of each subcomponent.

  In addition to the actuator, the piezoelectric ceramic of the present invention includes an oscillator, a filter, an ultrasonic cleaner, an ultrasonic motor, an atomizer vibrator, a fish detector, a shock sensor, an ultrasonic diagnostic device, a waste toner sensor, a gyroscope. You may use for a sensor, a buzzer, a transformer, or a lighter.

  EXAMPLES Hereinafter, although an Example demonstrates this invention still in detail, this invention is not limited to these Examples.

(Sample 1)
As starting materials for the main components, powder materials of PbO, CaO, SrO, BaO, CoO, Nb ₂ O ₅ , TiO ₂ and ZrO ₂ were prepared. Further, as the starting material of the first subcomponent and the second subcomponent _was prepared _{Dy 2 O 3, Gd 2 O} 3, Y 2 O 3, Ta 2 O 5, Nb 2 O 5, WO 3. These powder raw materials were weighed and blended so that the sintered body (piezoelectric ceramic) obtained after the main firing had the composition of “Sample 1” in Table 1 to obtain a raw material mixture. The content of the first subcomponent as shown in Table 1, the chemical formula _{Pb {(R2) d (R3} ) e} content of the first subcomponent in terms of the compound represented by _{O 3} (Unit: main component 100mol Mol number). Moreover, content of the 2nd subcomponent shown in Table 1 is content of the 2nd subcomponent converted into element R1 (a unit: the mass part with respect to 100 mass parts of main components, and the mol number with respect to 100 mol of main components).

Next, the raw material mixture was wet-mixed with a ball mill for 16 hours, and then calcined in the atmosphere at 700 to 900 ° C. for 2 hours to obtain a calcined product. The calcined product was finely pulverized, then wet pulverized with a ball mill for 16 hours, and further dried. After the dried calcined product is granulated by adding an acrylic resin as a binder, the calcined product is formed in a disc shape having a diameter of 17 mm and a thickness of 3 mm at a pressure of about 3 to 5 ton / cm ² using a uniaxial press molding machine. To obtain a molded body.

The molded body was ^subjected to main firing at 950 ° C. for 8 hours in a low oxygen atmosphere (reducing atmosphere) having an oxygen partial pressure of 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm to obtain a sintered body (piezoelectric ceramic). Got. The sintered body was processed into a disk shape having a thickness of 2.0 mm by slicing and lapping. A pair of Ag electrodes was formed by vapor-depositing Ag on both surfaces of the sintered body processed into a disk shape. Next, after grinding the outer periphery of the sintered body, an electric field of 3 kV / mm was applied for 15 minutes between a pair of Ag electrodes in silicone oil at 120 ° C. for polarization treatment, and the sintered body (piezoelectric ceramic) A piezoelectric element of Sample 1 including a piezoelectric layer made of the above and a pair of Ag electrodes that oppose each other through the piezoelectric layer was obtained.

  The piezoelectric layer of the piezoelectric element of Sample 1 was observed with a TEM (transmission electron microscope). A TEM image of Sample 1 is shown in FIG. Observation by TEM confirmed that the piezoelectric ceramic constituting the piezoelectric layer was a sintered body having a plurality of crystal grains. Further, in the piezoelectric ceramic of each element converted to oxide in that the distance from the surface of the crystal grain 20a in FIG. 2 to the center portion (distance from the grain boundary 22 in the L12 direction) is 0 nm, 5 nm, and 10 nm. The content rate (mol%) was determined. In addition, the content rate of each element was calculated | required by TEM-EDS (Energy-Dispersive X-ray Spectroscopy). The results are shown in Table 1.

  From the results shown in Table 1, in sample 1, Cu is detected at the grain boundary (point where the distance from the grain boundary is 0 nm), and Cu is not detected in the region where the distance from the grain boundary is 5 nm and 10 nm. That is, it was confirmed that Cu elements were unevenly distributed at the grain boundaries.

The piezoelectric element of Sample 1, the displacement at the time of applying a voltage of 2.0 kV / mm, measured at the fringe counter type laser displacement meter, measurement of the piezoelectric constant d _33. The piezoelectric strain constant d ₃₃ is based on strain in the direction perpendicular to the Ag electrode surface (the thickness direction of the sample 1) The piezoelectric strain constant d ₃₃ of the sample 1 is shown in Table 2. The piezoelectric strain is shown in Table 2. The larger the constant d _33, the better.

Using an impedance analyzer, the capacitance of the sample 1 to measure the resonant frequency (fr) and antiresonant frequency (fa), it was determined mechanical quality factor Q _m from the measurement results. The mechanical quality factor Q _m of the sample 1 shown in Table 2. Incidentally, as the mechanical quality factor Q _m small preferable, and particularly preferably 100 or less.

  A voltage of 1 kV / mm was applied between the Ag electrodes of Sample 1 for 60 seconds in a thermostat maintained at 150 ° C., the current value between the Ag electrodes was measured, and the specific resistance of Sample 1 (unit: Ω) -Cm). The specific resistance of Sample 1 is shown in Table 2. In addition, it is so preferable that a specific resistance is large.

(Samples 2 to 54)
The sintered body (piezoelectric ceramic) after the main firing was made to have the composition shown in Tables 2 to 6, and in the sample 49, the molded body was subjected to the main firing in the atmosphere to obtain a sintered body (piezoelectric ceramic). Samples 2 to 54 were prepared in the same manner as Sample 1, except that the above was obtained. Further, the presence or absence of uneven distribution of Cu element at the grain boundaries of Samples 2 to 54 was examined by the same method as Sample 1. Further, the piezoelectric strain constant d ₃₃ , mechanical quality factor Q _m and specific resistance of samples 2 to 54 were measured in the same manner as in sample 1. The results are shown in Tables 2-6.

As shown in Tables 2 to 6, selected from the group consisting of a main component composed of a complex oxide having a perovskite structure, at least one element R2 selected from the group consisting of Dy, Gd and Y, and Ta, Nb and W A first subcomponent containing at least one element R3, and a composite oxide comprising:
(Pb _1-xy Me _x ) [(Co _1/3 Nb _2/3 ) _a Ti _b Zr _c ] O ₃
[Wherein, Me represents at least one selected from the group consisting of Ca, Sr and Ba. ]
0 <1-xy, 0 ≦ x ≦ 0.05, 0 ≦ y ≦ 0.05, a + b + c = 1, 0.05 ≦ a ≦ 0.1, 0 <b <1, 0 <c <1, and 0.753 ≦ (b / c) × (1-a) ≦ 0.900, and a sample in which Cu elements are unevenly distributed at grain boundaries of the sintered body (implementation) example), as compared with the comparative example, large d _33, small Q _m, it was confirmed large specific resistance.

In Sample 10 where (b / c) × (1-a) is greater than 0.900, it was confirmed that _d33 was smaller than that in the example. Further, it was confirmed that even in the sample 48 in which (b / c) × (1-a) is smaller than 0.753, d ₃₃ is smaller than that in the example.

In the sample 27 in which the Cu element is not unevenly distributed at the grain boundary, the sintered body (piezoelectric ceramic) is cracked during the polarization treatment, and the sintered body (piezoelectric ceramic) cannot be polarized. It was confirmed that the resistance was small. Further, it was confirmed that in Sample 49 in which the Cu element is not unevenly distributed at the grain boundaries, d ₃₃ is smaller and Q _m is larger than in the example.

In sample 28 in which a = 0 and the contents of the first subcomponents R2 and R3 were 0, it was confirmed that _d33 was smaller than that of the example. In addition, it was confirmed that even in the sample 32 in which a is larger than 0.1 and the contents of the first subcomponents R2 and R3 are 0, _d33 is smaller than that in the example.

In the sample 53 where y is larger than 0.05, it was confirmed that _d33 was smaller than in the example. Further, it was confirmed that in the sample 54 where x is larger than 0.05, d ₃₃ is smaller and Q _m is larger than in the example.

It is a schematic sectional drawing of the piezoelectric element which concerns on one Embodiment of this invention. It is a TEM (transmission electron microscope) image which shows the grain boundary of the sintered compact with which the piezoelectric ceramic of the piezoelectric element which is an Example of this invention is provided.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a, 1b ... Internal electrode, 2 ... Piezoelectric layer, 3a, 3b ... Protective layer, 4a, 4b ... External electrode, 10 ... Piezoelectric element (laminated piezoelectric actuator), 20a, 20b ... crystal grain, 22 ... grain boundary.

Claims (5)

A main component composed of a complex oxide having a perovskite structure;
A sintered body containing a first subcomponent comprising at least one element R2 selected from the group consisting of Dy, Gd and Y and at least one element R3 selected from the group consisting of Ta, Nb and W With
The composite oxide is
(Pb _1-xy Me _x ) [(Co _1/3 Nb _2/3 ) _a Ti _b Zr _c ] O ₃
[Wherein, Me represents at least one selected from the group consisting of Ca, Sr and Ba. ]
Having a composition represented by
0 <1-xy,
0 ≦ x ≦ 0.05,
0 ≦ y ≦ 0.05,
a + b + c = 1,
0.05 ≦ a ≦ 0.1,
0 <b <1,
0 <c <1, and 0.753 ≦ (b / c) × (1-a) ≦ 0.900,
A piezoelectric ceramic in which Cu elements are unevenly distributed at grain boundaries of the sintered body. _{Pb {(R2) d (R3} ) e} O 3
[Where d + e = 1, 0 <d <1, 0 <e <1. ]
The piezoelectric ceramic according to claim 1, wherein the content of the first subcomponent converted to a compound represented by the formula is greater than 0 mol and less than or equal to 0.6 mol with respect to 100 mol of the main component.   The piezoelectric ceramic according to claim 1, wherein 0 <y ≦ 0.03 is satisfied. A second subcomponent containing at least one element R1 selected from the group consisting of Ta, Nb and W,
The piezoelectric ceramic according to any one of claims 1 to 3, wherein a content of the second subcomponent converted to the element R1 is greater than 0 mol and equal to or less than 0.9 mol with respect to 100 mol of the main component. A piezoelectric layer including the piezoelectric ceramic according to any one of claims 1 to 4,
A piezoelectric element comprising a plurality of internal electrodes containing Cu and stacked via the piezoelectric layer.