JP5103879B2 - シンチレータ用結晶及び放射線検出器 - Google Patents
シンチレータ用結晶及び放射線検出器 Download PDFInfo
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- JP5103879B2 JP5103879B2 JP2006317542A JP2006317542A JP5103879B2 JP 5103879 B2 JP5103879 B2 JP 5103879B2 JP 2006317542 A JP2006317542 A JP 2006317542A JP 2006317542 A JP2006317542 A JP 2006317542A JP 5103879 B2 JP5103879 B2 JP 5103879B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/253—Halides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7719—Halogenides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7772—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Luminescent Compositions (AREA)
- Measurement Of Radiation (AREA)
- Nuclear Medicine (AREA)
Description
Ln(1−y)CeyX3:M (1)
ここで、一般式(1)中、Ln(1−y)CeyX3は母体材料の化学組成を示し、Lnは希土類元素からなる群より選択される1種以上の元素を示し、Xはハロゲン元素からなる群より選択される1種以上の元素を示し、Mは前記母体材料中にドープされているドーパントの構成元素であって、Li、Na、K、Rb、Cs、Al、Zn、Ga、Be、Mg、Ca、Sr、Ba、Sc、Ge、Ti、V、Cu、Nb、Cr、Mn、Fe、Co、Ni、Mo、Ru、Rh、Pb、Ag、Cd、In、Sn、Sb、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl及びBiからなる群より選択される1種以上の元素を示し、yは下記式(A):
0.0001≦y≦1 (A)
で表される条件を満足する数値を示す。
Ln(1−y)CeyX3:M (1)
ここで、一般式(1)中、Ln(1−y)CeyX3は母体材料の化学組成を示し、Lnは希土類元素からなる群より選択される1種以上の元素を示し、Xはハロゲン元素からなる群より選択される1種以上の元素を示し、Mは母体材料中にドープされているドーパントの構成元素であって、Li、Na、K、Rb、Cs、Al、Zn、Ga、Be、Mg、Ca、Sr、Ba、Sc、Ge、Ti、V、Cu、Nb、Cr、Mn、Fe、Co、Ni、Mo、Ru、Rh、Pb、Ag、Cd、In、Sn、Sb、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl及びBiからなる群より選択される1種以上の元素を示し、yは下記式(A):
0.0001≦y≦1 (A)
で表される条件を満足する数値を示す。
シンチレータ用結晶の母体材料の原料として、LaBr3(アルドリッチ社製、純度99.99%)25g、CeBr3(アルドリッチ社製、純度99.99%)0.125gを用いた。シンチレータ用結晶のドーパント原料として、NaBr(アルドリッチ社製、純度99.99%)2.5125mgと、FeBr2(アルドリッチ社製、純度99.99%)2.5125mgと、NiBr2(アルドリッチ社製、純度99.99%)2.5125mgとを用いた。母体材料の原料とドーパント原料とを混合して混合原料を得た。
シンチレータ用結晶のドーパント原料として、NaBr(アルドリッチ社製、純度99.99%)5.025mgを用いたこと以外は、実施例1と同様にして単結晶を製造した。
シンチレータ用結晶のドーパント原料として、FeBr2(アルドリッチ社製、純度99.999%)5.025mgを用いたこと以外は、実施例1と同様にして単結晶を製造した。
シンチレータ用結晶の母体材料の原料として、CeBr3(アルドリッチ社製、純度99.99%)25g、シンチレータ用結晶のドーパント原料として、NaBr(アルドリッチ社製、純度99.99%)2.5mg、FeBr2(アルドリッチ社製、純度99.999%)2.5mg、NiBr2(アルドリッチ社製、純度99.999%)2.5mgを用いたこと以外は、実施例1と同様にして単結晶を製造した。
シンチレータ用結晶のドーパント原料として、NaBr(アルドリッチ社製、純度99.99%)5.0mgを用いたこと以外は、実施例4と同様にして単結晶を製造した。
シンチレータ用結晶のドーパント原料として、FeBr2(アルドリッチ社製、純度99.999%)5.0mgを用いたこと以外は、実施例4と同様にして単結晶を製造した。
シンチレータ用結晶のドーパント原料を添加しなかったこと以外は、実施例1と同様にして単結晶を製造した。
シンチレータ用結晶のドーパント原料を添加しなかったこと以外は、実施例4と同様にして単結晶を製造した。
Claims (7)
- 下記一般式(1)で表されるシンチレータ用結晶。
Ln(1−y)Cey Br 3:M (1)
(一般式(1)中、Ln(1−y)Cey Br 3は母体材料の化学組成を示し、Lnは希土類元素からなる群より選択される1種以上の元素を示し、Mは前記母体材料中にドープされているドーパントの構成元素であって、Na、Fe及びNiからなる群より選択される1種以上の元素を示し、yは下記式(A):
0.0001≦y≦1 (A)
で表される条件を満足する数値を示す。) - 前記LnはLaである、請求項1記載のシンチレータ用結晶。
- 前記Mが前記シンチレータ用結晶の総質量に対して0.0001〜0.05質量%含まれている、請求項1又は2に記載のシンチレータ用結晶。
- 発生する蛍光の蛍光波長に対する蛍光強度分布が2つの極大値を示し、かつ、それらの極大値のうち短波長側の極大値における蛍光強度を長波長側の極大値における蛍光強度で除した値が0.7を超える、請求項1〜3のいずれか一項に記載のシンチレータ用結晶。
- 単結晶である、請求項1〜4のいずれか一項に記載のシンチレータ用結晶。
- 光電子増倍管と、前記光電子増倍管の光電面の外側に設けられた請求項1〜5のいずれか一項に記載のシンチレータ用結晶を備えるシンチレータと、を有する放射線検出器。
- 陽電子放出型断層撮像装置に組み込まれている、請求項6記載の放射線検出器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006317542A JP5103879B2 (ja) | 2006-09-20 | 2006-11-24 | シンチレータ用結晶及び放射線検出器 |
US11/858,487 US7692153B2 (en) | 2006-09-20 | 2007-09-20 | Scintillator crystal and radiation detector |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006254408 | 2006-09-20 | ||
JP2006254408 | 2006-09-20 | ||
JP2006317542A JP5103879B2 (ja) | 2006-09-20 | 2006-11-24 | シンチレータ用結晶及び放射線検出器 |
Publications (2)
Publication Number | Publication Date |
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JP2008101180A JP2008101180A (ja) | 2008-05-01 |
JP5103879B2 true JP5103879B2 (ja) | 2012-12-19 |
Family
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Family Applications (1)
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JP2006317542A Expired - Fee Related JP5103879B2 (ja) | 2006-09-20 | 2006-11-24 | シンチレータ用結晶及び放射線検出器 |
Country Status (2)
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US (1) | US7692153B2 (ja) |
JP (1) | JP5103879B2 (ja) |
Families Citing this family (27)
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US7576329B2 (en) * | 2003-10-17 | 2009-08-18 | General Electric Company | Scintillator compositions, and related processes and articles of manufacture |
FR2874021B1 (fr) | 2004-08-09 | 2006-09-29 | Saint Gobain Cristaux Detecteu | Materiau scintillateur dense et rapide a faible luminescence retardee |
US20100101387A1 (en) * | 2008-10-24 | 2010-04-29 | Kedar Prasad Gupta | Crystal growing system and method thereof |
US8889036B2 (en) | 2009-05-15 | 2014-11-18 | Schlumberger Technology Corporation | Scintillator crystal materials, scintillators and radiation detectors |
DE102009048859A1 (de) * | 2009-10-09 | 2011-04-14 | Schott Ag | Verfahren zur Herstellung von besonders festem kristallinem Szintillationsmaterial, ein mit diesem Verfahren erhaltener Kristall, sowie dessen Verwendung |
DE102009045518A1 (de) | 2009-10-09 | 2011-04-14 | Schott Ag | Szintillationsmaterialien mit verbesserten Eigenschaften und Verfahren zur Herstellung derselben |
US20110084233A1 (en) * | 2009-10-09 | 2011-04-14 | Johann-Christoph Von Saldern | Scintillation materials in single crystal or polycrystalline form with improved properties, especially light yield and strain birefringence |
US20110085957A1 (en) * | 2009-10-09 | 2011-04-14 | Johann-Christoph Von Saldern | Process for producing scintillation materials of low strain birefringence and high refractive index uniformity |
DE102009045524A1 (de) | 2009-10-09 | 2011-04-14 | Schott Ag | Szintillationsmaterialien mit geringem Sauerstoffgehalt und Verfahren zu deren Herstellung |
US8673179B2 (en) * | 2009-10-09 | 2014-03-18 | Hellma Materials Gmbh | Scintillation materials of low oxygen content and process for producing same |
DE102009045520A1 (de) | 2009-10-09 | 2011-04-14 | Schott Ag | Verfahren zur Herstellung von Szintillationsmaterialien mit geringer Spannungsdoppelbrechung und hoher Homogenität der Brechzahl |
RU2426694C1 (ru) | 2010-02-15 | 2011-08-20 | Общество С Ограниченной Ответственностью "Сцинтилляционные Технологии Радиационного Контроля" | Неорганический сцинтилляционный материал, кристаллический сцинтиллятор и детектор излучения |
US8519347B2 (en) | 2010-08-10 | 2013-08-27 | Northwestern University | Methods and compositions for the detection of X-ray and gamma-ray radiation |
WO2012066425A2 (en) | 2010-11-16 | 2012-05-24 | Saint-Gobain Cristaux Et Detecteurs | Scintillation compound including a rare earth element and a process of forming the same |
JP6130360B2 (ja) * | 2011-06-06 | 2017-05-17 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 希土類ハロゲン化物を含むシンチレーション結晶、およびシンチレーション結晶を含む放射線検出システム |
US11555147B2 (en) | 2011-10-10 | 2023-01-17 | Siemens Medical Solutions Usa, Inc. | Metal halide scintillators with reduced hygroscopicity and method of making the same |
US9966162B2 (en) * | 2011-10-10 | 2018-05-08 | Siemens Medical Solutions Usa, Inc. | Metal halide scintillators with reduced hygroscopicity and method of making the same |
EP2782976B1 (en) | 2011-11-24 | 2019-11-13 | Saint-Gobain Ceramics & Plastics Inc. | Luminescent material and a process of forming the same |
EP2912143B1 (en) | 2012-10-28 | 2019-11-27 | Stichting voor de Technische Wetenschappen | Scintillation crystal including a rare earth halide, and a radiation detection apparatus including the scintillation crystal |
EP4166627A1 (en) | 2015-02-26 | 2023-04-19 | Saint-Gobain Cristaux & Detecteurs | Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same |
WO2017030624A1 (en) | 2015-06-03 | 2017-02-23 | Northwestern University | Chalco-phosphate-based hard radiation detectors |
US11073626B2 (en) * | 2017-11-10 | 2021-07-27 | Canon Kabushiki Kaisha | Scintillator, method of forming the same, and radiation detection apparatus |
CN109988577B (zh) * | 2017-12-27 | 2020-12-25 | 有研稀土新材料股份有限公司 | 稀土卤化物闪烁材料及其应用 |
WO2019168169A1 (ja) * | 2018-03-02 | 2019-09-06 | 国立大学法人東北大学 | 蛍光体 |
EP3803467B1 (en) * | 2018-05-25 | 2024-07-03 | Saint-Gobain Ceramics & Plastics Inc. | Csi(tl) scintillator crystal including antiomy to reduce afterglow, and a radiation detection apparatus including the scintillation crystal |
EP3814452A4 (en) | 2018-06-29 | 2022-04-06 | Saint-Gobain Ceramics & Plastics, Inc. | LUMINESCENT MATERIAL COMPRISING A RARE EARTH HALOGENIDE AND APPARATUS COMPRISING SUCH MATERIAL |
JP7661243B2 (ja) | 2020-01-15 | 2025-04-14 | 株式会社小糸製作所 | シンチレータおよびシンチレータの製造方法 |
Family Cites Families (13)
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JPS58138774A (ja) | 1982-02-12 | 1983-08-17 | Hitachi Chem Co Ltd | γ線検出器 |
US4958080A (en) | 1988-10-06 | 1990-09-18 | Schlumberger Technology Corporation | Lutetium orthosilicate single crystal scintillator detector |
JPH0778215A (ja) | 1993-09-08 | 1995-03-20 | Hitachi Ltd | 業務プログラムの実行方法 |
NL1014401C2 (nl) * | 2000-02-17 | 2001-09-04 | Stichting Tech Wetenschapp | Ceriumhoudend anorganisch scintillatormateriaal. |
JP3877162B2 (ja) | 2002-02-05 | 2007-02-07 | 日立化成工業株式会社 | Gso単結晶及びpet用シンチレータ |
WO2004044613A2 (en) | 2002-11-12 | 2004-05-27 | The Trustees Of The University Of Pennsylvania | Lanthanum halide scintillators for time-of-flight 3-d pet |
FR2847594B1 (fr) | 2002-11-27 | 2004-12-24 | Saint Gobain Cristaux Detecteu | Preparation de blocs d'halogenure de terre rare |
US7084403B2 (en) | 2003-10-17 | 2006-08-01 | General Electric Company | Scintillator compositions, and related processes and articles of manufacture |
US7576329B2 (en) * | 2003-10-17 | 2009-08-18 | General Electric Company | Scintillator compositions, and related processes and articles of manufacture |
US7608828B2 (en) * | 2004-04-12 | 2009-10-27 | Stella Chemifa Corporation | Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device |
US7202477B2 (en) | 2005-03-04 | 2007-04-10 | General Electric Company | Scintillator compositions of cerium halides, and related articles and processes |
JP2007045869A (ja) * | 2005-08-08 | 2007-02-22 | Stella Chemifa Corp | 低吸湿性ハロゲン置換フッ化物シンチレータ材料、及び放射線検出器及び検査装置 |
US20080011953A1 (en) * | 2006-07-11 | 2008-01-17 | General Electric Company | Scintillator composition, article, and associated method |
-
2006
- 2006-11-24 JP JP2006317542A patent/JP5103879B2/ja not_active Expired - Fee Related
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2007
- 2007-09-20 US US11/858,487 patent/US7692153B2/en not_active Expired - Fee Related
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JP2008101180A (ja) | 2008-05-01 |
US20080067391A1 (en) | 2008-03-20 |
US7692153B2 (en) | 2010-04-06 |
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