JP4104253B2 - Board integrated structure - Google Patents

Description

【００４３】
（２）ヒートシンク及びＡｌ回路
５０ｍｍ×５０ｍｍ×３ｍｍのＡｌ／ＳｉＣ複合体（特願平９−２８８２１９号に準じて製造したもの）、又は５０ｍｍ×５０ｍｍ×１０ｍｍのＡｌブロックを用いた。また、Ａｌ回路は市販のＡｌ材（純度≧９９．９９％）から、回路パターンを打ち抜いて用いた。
【００４４】
（３）一体型構造体の作製
表２に示される接合材と、前記の窒化アルミニウム基板、放熱部品及びＡｌ回路とを、図１のように積層した。これを炉外から油圧式の一軸加圧装置でカーボン製の押し棒を介して窒化アルミニウム基板面と垂直方向に加圧しながら加熱を行い、接合した。接合条件は、表３に示すとおりであり、４×１０^-3Ｐａの真空中（バッチ炉）又はＮ₂ガス中（連続炉）で行った。なお、比較例１では、窒化アルミニウム基板の表裏面にＡｌ板（厚み０．４ｍｍ）を接合した後、共晶半田で放熱部品に接合した。
【００４５】
【表２】

【００４６】
【表３】

【００４７】
（４）基板一体型構造体の評価
得られた回路基板一体型構造体について、その接合状態を超音波探傷装置(ＳＡＴ)で観察し、直径１ｍｍ以上の未接合部又は１％以上の未接合面積部が確認できたものを接合不良とした。次に、各試料は、−４０℃、３０分→室温、１０分→１２５℃、３０分→室温、１０分を１サイクルとして３０００サイクルのヒートサイクルテストを行った後、外観観察して異常の有無を確認し、再びＳＡＴで接合状態を調べた。それらの結果を表４に示す。
【００４８】
【表４】

【００４９】
実施例、比較例から明らかなように、本発明の基板一体型造体では、いずれも良好な接合状態を示した。特に、実施例１、２、４では、簡易的な連続炉を用いたにも拘わらず、接合不良のない基板一体型構造体が得られている。これに対して、比較例１〜３では、ヒートサイクル後には不良品が多発している。
【００５０】
【発明の効果】
本発明によれば、軽量にして放熱性に優れた高信頼性の基板一体型構造体が提供され、前記基板上に回路形成するのみで、軽量で放熱性に優れた回路基板が放熱部品に一体化された構造体を得ることができる。
【図面の簡単な説明】
【図１】 本発明の実施例、比較例の基板一体型構造体を得るときの積層方法を説明する図。
【符号の説明】
１ カーボン製スペーサー
２ Ａｌ
３ 接合材
４ 窒化アルミニウム基板
５ 接合材
６ 放熱部品[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a circuit board integrated structure for a semiconductor device that is lightweight, excellent in heat dissipation, and highly reliable.
[0002]
[Prior art]
In various semiconductor devices including a power module, a ceramic substrate provided with a circuit made of Cu on both surfaces is used as a circuit substrate. In particular, when high heat dissipation is required due to high integration and high power, aluminum nitride having high thermal conductivity is used as a ceramic.
[0003]
However, in the circuit board provided with the circuit made of Cu, due to repeated thermal stress due to the difference in thermal expansion coefficient between the Cu circuit (or the heat dissipation Cu plate provided on the back surface) and the aluminum nitride substrate, Since fine cracks may occur in the aluminum nitride substrate, it has been attempted to join an Al plate having a low yield strength when high reliability is required.
[0004]
In addition, the circuit board is usually used by soldering the heat radiating metal plate to the base Cu plate in order to join the heat radiating fin or the like. In order to avoid the occurrence of solder cracks, it is also possible to use a material with a low thermal expansion coefficient for the base plate. In recent years, the silicon carbide porous body is impregnated with a metal mainly composed of Al in the voids of the silicon carbide porous body. An aluminum-silicon carbide composite (hereinafter referred to as an Al / SiC composite) obtained by the above process has been developed.
[0005]
[Problems to be solved by the invention]
With the recent high integration and high power of semiconductor devices, lighter and more compact and higher heat dissipation is required. (1) One side of the metal plate provided on both sides of the ceramic substrate Attempts have been made such as omitting and directly joining the base plate, and (2) omitting the base plate and directly mounting the ceramic substrate on a heat sink such as a water-cooled plate or a heat radiating fin. However, these attempts have a problem that they cannot withstand the stress caused by the difference in thermal expansion coefficient of each component and the temperature change in the assembly process and the use environment, and the reliability cannot be ensured.
[0006]
Solder is mainly used to improve heat conduction when attaching the circuit board to the base plate, but the solder deforms by absorbing the difference in thermal expansion between the ceramic substrate and the base plate. It also played a role in preventing the substrate and silicon chip from cracking. However, in the future, it is desirable that the solder has a lead-free composition due to environmental pollution problems. In this case, the stress that causes plastic deformation increases, and the stress relaxation ability decreases. Furthermore, considering that lead-free solder is inferior in solder wettability compared with the current Pb-Sn system, there is a reliable and excellent adhesion between a circuit board and a heat radiation component such as a base plate or a heat sink. Joining will become increasingly necessary.
[0007]
Furthermore, in the case where an Al / SiC composite material is used as a heat dissipation component, it is also considered that a silicon carbide porous body is impregnated with a metal containing Al as a main component and simultaneously bonded to a ceramic substrate. In addition to being a very advanced technology, there are unsolved problems such as the ceramic substrate being buried in the metal layer mainly composed of Al. Moreover, if the shape of the heat dissipation component or the ceramic substrate changes, the formwork to be used must be changed accordingly, which is inconvenient in production.
[0008]
On the other hand, with respect to a technique for bonding a base plate, which is a heat dissipation component, and a ceramic substrate with a bonding material, there are many proposals as disclosed in, for example, Japanese Patent Laid-Open No. 3-125463. In the above technique, an Al—Si or Al—Ge alloy foil is used as a bonding material, and bonding is performed using a batch type vacuum furnace. However, when a large base plate is introduced into the batch type vacuum furnace, volume efficiency is improved. Productivity decreases because it gets worse. Also, a large continuous vacuum furnace is expensive and difficult to strictly control temperature, and is not suitable for such joining.
[0009]
As described above, when a ceramic circuit board and a heat dissipation component are directly bonded, a module having efficient heat dissipation is obtained, but this is not realized because there is no industrial bonding technique.
[0010]
The present invention has been made in view of the above, and an object of the present invention is to provide an industrial joining technique for joining a ceramic circuit board and a heat dissipation component, and to provide a lightweight module having efficient heat dissipation. It is to provide. That is, a circuit board formed by forming an Al circuit on at least one surface of an aluminum nitride substrate has a structure in which it is joined to a heat radiating component made of an Al / SiC composite material without using solder, making it lightweight and radiating heat. It is an object of the present invention to provide a highly reliable substrate integrated structure.
[0011]
[Means for Solving the Problems]
The present invention is a substrate integrated structure comprising an aluminum nitride substrate having an aluminum or aluminum alloy plate bonded to at least one surface and a heat dissipation component formed by impregnating a silicon carbide based porous material with a metal mainly composed of Al. The aluminum or aluminum alloy plate and the heat dissipating part contain at least one selected from the group consisting of Mg and Cu, Ge and Si, and the temperature at which the liquid phase is formed is 500 to 630 ° C. A substrate-integrated structure characterized by being bonded through an alloy.
[0012]
Further, the present invention is the above-described circuit board integrated structure, wherein the heat dissipation component is provided with a metal layer mainly composed of Al of 10 μm or more on the main surface of the heat dissipation component.
[0013]
Further, the present invention provides an aluminum-silicon carbide composite in which the heat dissipation component is made of an aluminum alloy containing 40 to 70% by volume of silicon carbide and the balance of 4 to 14% by weight of Si, and the thermal conductivity is 160 W / mK or more. The circuit board integrated structure described above, characterized by comprising:
[0014]
Furthermore, the aluminum nitride substrate has a thermal conductivity of 130 W / mK or more, and the surface has an X-ray diffraction peak intensity ratio of 2 ≦ (Y ₂ O ₃ .Al ₂ O ₃ / AlN) × 100 ≦ 17, and ( 2Y ₂ O ₃ · Al ₂ O ₃ / AlN) × 100 ≦ 2 is the circuit board integrated structure described above.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
The present invention relates to a substrate integrated structure comprising an aluminum nitride substrate having an aluminum or aluminum alloy plate bonded to at least one surface, and a heat dissipation component formed by impregnating a silicon carbide porous body with a metal mainly composed of Al. The aluminum or aluminum alloy plate and the heat dissipation component are joined by an Al alloy containing Mg and one or more selected from the group consisting of Cu, Ge, and Si. It is a body structure. By adopting the above configuration, it is possible to provide a highly reliable substrate-integrated structure that is lightweight and excellent in heat dissipation.
[0016]
The aluminum nitride substrate used in the present invention is fired using Y ₂ O ₃ as a sintering aid, and preferably has a thermal conductivity of 130 W / mK or more. Further, the intensity ratio of the main peak of X-ray diffraction by CuKα on the surface is 2 ≦ (Y ₂ O ₃ .Al ₂ O ₃ / AlN) × 100 ≦ 17, and (2Y ₂ O ₃ .Al ₂ O ₃ / It is preferable that AlN) × 100 ≦ 2. The aluminum nitride substrate having such surface characteristics contains Mg and one or more selected from the group consisting of Cu, Ge, and Si without performing complicated surface treatment such as oxidation treatment, and at least a part thereof. Using an Al alloy having a liquid phase forming temperature of 500 to 630 ° C., it can be bonded to a metal mainly composed of Al with a sufficiently strong strength.
[0017]
The surface characteristics of the aluminum nitride substrate are adjusted by adjusting the composition ratio of Al ₂ O ₃ and Y ₂ O ₃ in the raw material aluminum nitride powder, the amount of oxygen increased after degreasing and before firing, the firing temperature, etc. Can do.
[0018]
For example, when 2Y ₂ O ₃ · Al ₂ O ₃ is large, it is sufficient to increase the amount of Al ₂ O ₃ relatively, so use an aluminum nitride powder raw material with a large amount of oxygen or add Al ₂ O _3. , Reduce Y ₂ O ₃ . On the other hand, when the amount of Y ₂ O ₃ .Al ₂ O ₃ is large, the amount of Y ₂ O ₃ added is reduced or the firing temperature is lowered. In addition, Al ₂ O ₃ can be increased by degreasing in air.
[0019]
An Al circuit can be formed on the aluminum nitride substrate by bonding an Al plate and then etching, bonding a pattern punched from the Al plate, or the like. The bonding material contains Mg and at least one selected from the group consisting of Cu, Ge, and Si, and uses an Al alloy having a temperature of 500 to 630 ° C. for forming a liquid phase. Will be described later. In order to improve productivity, it is preferable to join an Al plate or a pattern made of Al at the same time as joining with a heat dissipation component.
[0020]
A heat dissipation component made of a composite formed by impregnating a silicon carbide porous body with a metal mainly composed of Al used in the present invention includes, for example, a silicon carbide porous body (also called a preform) containing Al as a main component. For example, ceramic data book '95, Yuzo Yamaguchi, Saburo Hori, pages 95 to 101 (1995)). The heat dissipating part desirably has an appropriate thermal expansion coefficient and high thermal conductivity, and desirably has a thermal conductivity of 160 W / mK or more and a thermal expansion coefficient of 6 to 10 ppm. This physical property can be adjusted by a volume ratio of a metal containing Al as a main component and silicon carbide, and is preferably 40-70% by volume of silicon carbide and the balance being a metal containing Al as a main component. Further, as the metal having Al as a main component, an alloy composition whose characteristics do not deteriorate even when exposed to temperature in an assembly process or a use environment is desirable, for example, an Al alloy containing 4 to 14% by weight of Si is desirable.
[0021]
In the present invention, the heat dissipating part preferably has a structure in which silicon carbide is not exposed on the main surface thereof, and the heat dissipating part may have a structure in which the Al-based metal is a layer of 10 μm or more. desirable. The main surface is a surface to which the circuit board is brazed, and when the surface of the heat dissipation component is plated, it refers to the surface of the portion to be plated. If silicon carbide is exposed on these surfaces, defects such as defects on the brazed surface, difficulty in forming a plating film, and low adhesion strength of plating and brazing are likely to occur.
[0022]
The surface of the substrate integrated structure according to the present invention is Ni-plated on the entire surface or a portion where Al or an Al alloy is exposed on the surface, if necessary. Particularly, the soldered portion needs to be Ni-plated, and the portion to be bonded with Al wire is more reliable when there is no Ni-plating. Therefore, partial plating is preferable.
[0023]
In the present invention, the bonding of the aluminum or aluminum alloy plate and the aluminum nitride plate contains Mg and one or more selected from the group consisting of Cu, Ge and Si, and the temperature for forming the liquid phase is 500 to 630 ° C. Al alloys such as Al—Mg—Cu alloys, Al—Mg—Ge alloys, Al—Mg—Si alloys, and the like are used. The reason is as follows.
[0024]
As described above, Al—Si based alloys and Al—Ge based alloys are known for joining an aluminum nitride substrate and an aluminum or aluminum alloy plate, but are composed of Mg, Cu, Ge and Si according to the present invention. Since the Al alloy containing at least one selected from the group has a wider tolerance range for bonding conditions with the aluminum nitride substrate than the alloy, it can be bonded without being in a vacuum. Excellent bonding is possible.
[0025]
In other words, conventionally known Al—Si alloys and Al—Ge alloys do not lower the melting point unless a relatively large amount of Si or Ge is added, but if they are added in a large amount, they become hard and brittle. In order not to cause such a problem, for example, in an Al—Si alloy, if the Si ratio is lowered to 5%, the melting point becomes 615 ° C., and it is difficult to join at a temperature of 620 ° C. or lower even if pressure is applied. Become.
[0026]
On the other hand, in the Al alloy containing Mg of the present invention, in particular, the Al—Mg—Cu alloy, the Al—Mg—Ge alloy, or the Al—Mg—Si alloy, the ratio of Cu, Ge, Si is 4 Even if the pressure is reduced to about%, it is possible to perform bonding at about 600 ° C. by appropriately applying means such as pressurization, and the allowable range of bonding conditions is widened. Furthermore, the Al—Mg—Cu based alloy, Al—Mg—Ge based alloy and Al—Mg—Si based have Cu, Ge, Si and Mg compared to the case where Si or Ge is added alone to Al. Since it is easy to diffuse uniformly in Al, local melting occurs, or excess bonding material is not pushed out, and it is difficult to cause creaking, and stable bonding is possible in a relatively short time.
[0027]
In this invention, about Mg in Al alloy containing Mg, a joining state becomes favorable by adding a small amount. This is presumed to be due to the effect of removing the oxide layer on the Al surface and the effect of improving the wettability between the surface of the aluminum nitride substrate and the bonding material. The proportion of Mg is preferably 0.05 to 3% by weight. If it is less than 0.05% by weight, the effect of addition becomes inconspicuous, and if it exceeds 3% by weight, the hardness of Al or Al alloy is adversely affected, and a large amount of volatilization may occur during bonding, thereby hindering furnace operation. Particularly preferred is 0.1 to 1.0% by weight.
[0028]
The proportion of Cu in the Al—Mg—Cu alloy is preferably 2 to 10% by weight. If it is less than 2% by weight, the bonding temperature becomes high and close to the melting point of Al, and if it exceeds 10% by weight, the diffusion part of the brazing material after bonding becomes particularly hard and the reliability of the circuit board may be lowered. There is. Preferably it is 2 to 6% by weight.
[0029]
Moreover, it is preferable that the ratio of Ge in an Al-Mg-Ge type alloy is 2 to 20 weight%. If it is less than 2% by weight, the bonding temperature becomes high and close to the melting point of Al, and if it exceeds 20% by weight, the diffusion part of the brazing material after bonding becomes particularly hard and the reliability of the circuit board may be lowered. There is. Preferably it is 2 to 10% by weight.
[0030]
The proportion of Si in the Al—Mg—Si alloy is preferably 4 to 14% by weight. If it is less than 4% by weight, the bonding temperature becomes high and close to the melting point of Al. If it exceeds 14% by weight, the diffusion part of the brazing material after bonding becomes particularly hard and the reliability of the circuit board may be lowered. There is. Preferably, it is 4 to 12% by weight.
[0031]
The Al—Mg—Cu based alloy, Al—Mg—Ge based alloy or Al—Mg—Si based alloy used in the present invention is not only the main components of Al, Mg, Cu, Ge and Si but also other components. May be included. For example, in addition to Al, Mg, Cu, Ge, and Si, components such as Zn, In, Mn, Cr, Ti, Bi, B, and Fe may be included in a total of about 5% by weight or less. Examples of Japanese Industrial Standards for the composition of the bonding material used in the present invention include a 2018 alloy containing about 4% by weight of Cu and about 0.5% by weight of Mg, and further about 0.5% by weight of Mn. And the like, and 2001, 2005, 2007, 2014, 2024, 2030, 2034, 2036, 2048, 2090, 2117, 2124, 2214, 2218, 2224, 2324, 7050 and the like.
[0032]
As for the temperature when the aluminum nitride substrate and the aluminum plate are joined with the Al alloy containing Mg at a liquid phase temperature of 500 to 630 ° C., the liquid phase range is 500 to 630 ° C. However, the appropriate temperature condition varies depending on the composition of the bonding material. When a low melting point component such as Zn or In is added, or when the content of Mg, Cu, Ge or the like is relatively high, sufficient bonding can be achieved even at 600 ° C. or lower. When the bonding temperature is higher than 630 ° C., it is not preferable because a soldering defect (a worm-eating phenomenon generated in a circuit) is likely to occur during bonding.
[0033]
In the present invention, at the time of heat-bonding, 10~100kgf / cm ² in a direction perpendicular and the aluminum nitride substrate, it is preferred in particular pressurized with 15~80kgf / cm ^2. As a pressurizing method, a weight can be placed, or mechanically applied using a jig. Pressurization is maintained at the temperature at which the joining starts, for example, when joining at 610 ° C. using an Al-0.3% Mg-4% Cu alloy foil within the temperature range up to 580 ° C. It is desirable.
[0034]
In the substrate integrated structure of the present invention, an Al circuit is formed on one surface of an aluminum nitride substrate, and a heat radiating component such as a base plate or a heat sink is provided with or without an aluminum plate on the other surface. Are joined. The composition of the above Al-Mg-Cu alloy, Al-Mg-Ge alloy or Al-Mg-Si alloy and the composition of the metal mainly composed of Al used for the Al / SiC composite material should be selected as appropriate. Thus, the circuit pattern made of aluminum or the heat radiating aluminum plate and the heat radiating component made of the Al / SiC composite material can be simultaneously bonded to the front and back surfaces of the aluminum nitride substrate. In this case, the bonding material of the Al—Mg—Cu alloy, Al—Mg—Ge alloy or Al—Mg—Si alloy is used between the aluminum nitride substrate and the aluminum circuit pattern or the aluminum plate for forming the aluminum circuit. However, it is preferable to clad an aluminum plate and a bonding alloy in advance because it is easier to use.
[0035]
When the melting point of the metal mainly composed of Al of the Al / SiC composite material used for the heat dissipation component is low, for example, when the Si content is 12% by weight, the melting point is lower than 580 ° C., and aluminum or aluminum alloy plate, aluminum nitride The conditions for joining the plate and the heat dissipation component at the same time need to be lower than the above temperature. It is possible to increase the amount of Cu in the Al-Mg-Cu alloy to about 10% by weight, but in the case of Al-Mg-Ge alloy, if Ge is increased to 10% by weight, bonding can be performed even at 520 ° C, which is more preferable. It is. Alternatively, a circuit board may be manufactured in advance from an aluminum nitride substrate, and it may be bonded to a heat dissipation component made of an Al / SiC composite material using an Al—Mg—Ge alloy.
[0036]
The substrate integrated structure according to the present invention can significantly increase the productivity by using an Al alloy containing Mg and having a liquidus temperature of 500 to 630 ° C. as a bonding material. One reason is that bonding is not limited to a vacuum furnace. Vacuum furnaces are inherently expensive, difficult to continue, and batch furnaces have poor volumetric efficiency. When a large furnace is used, temperature distribution tends to occur, and high yield production cannot be expected. On the other hand, liquid phase temperature containing Mg, such as Al-Mg-Cu alloy and Al-Mg-Ge alloy, instead of the conventional Al-Si or Al-Ge alloy bonding material. If an Al alloy with a temperature of 500 to 630 ° C. is used, the furnace structure can be simplified because bonding can be performed in a low oxygen atmosphere of N 2, H 2, an inert gas, and a mixed gas thereof, even without a vacuum. Also, continuation is easy. Furthermore, the continuation can reduce the variation factor of the product such as the temperature distribution, and can achieve an effect that a product with high yield and stable quality can be manufactured.
[0037]
Moreover, when manufacturing the board | substrate integrated structure of this invention, it is preferable to laminate | stack and heat so that heat dissipation components and aluminum nitride board | substrates may adjoin. This is because the heat dissipation component generally has a larger coefficient of thermal expansion than the circuit board, so that the circuit board side tends to be convex due to cooling after bonding, and this deformation is reduced. This utilizes the point that Al is a material that is easily plastically deformed. In this case, a spacer material may be interposed as necessary in order to avoid adhesion between the heat radiating parts and the aluminum materials existing on the surface of the aluminum nitride substrate.
[0038]
In the substrate-integrated structure of the present invention, an Al—Mg—O layer having a thickness of 20 nm or less exists on a part of or the entire surface of the bonding interface between aluminum or an aluminum alloy and an aluminum nitride plate. . Here, the Al—Mg—O layer is an amorphous layer mainly composed of Al, Mg, and oxygen. When bonding is performed using a brazing material that does not contain Mg or contains only a small amount, an Al-O layer is present partially or entirely at the bonding interface between Al or Al alloy and aluminum nitride. A highly bonded interface cannot be obtained. Therefore, it is expected that the Al—Mg—O layer has a useful function for bonding at the interface.
[0039]
Furthermore, the substrate integrated structure of the present invention can relieve thermal stress that tends to remain on the aluminum nitride substrate by annealing at a temperature range of 200 ° C. or higher, preferably about 300 to 350 ° C.
[0040]
【Example】
Hereinafter, based on an Example and a comparative example, this invention is demonstrated still in detail.
[0041]
[Examples 1-4, Comparative Examples 1-3]
(1) Aluminum Nitride Substrate Y ₂ O ₃ was mixed with commercially available aluminum nitride powder in the ratio shown in Table 1, an organic binder and an organic solvent were added and kneaded, and then formed into a sheet by a roll molding machine. This was cut, a release material (BN powder) was applied, laminated, degreased at 450 ° C. under a reduced pressure of 1 Pa, and decarbonized in the air. Each sample was sintered under the firing conditions shown in Table 1 under an N ₂ atmosphere to produce a 40 mm × 40 mm × 0.635 mm aluminum nitride substrate. About the obtained aluminum nitride board | substrate, while producing | generating the auxiliary | assistant phase by X-ray diffraction, the thermal conductivity was calculated | required by the laser flash method. The results are shown in Table 1.
[0042]
[Table 1]

[0043]
(2) A heat sink and an Al circuit 50 mm × 50 mm × 3 mm Al / SiC composite (manufactured according to Japanese Patent Application No. 9-288219) or an Al block of 50 mm × 50 mm × 10 mm was used. The Al circuit was used by punching a circuit pattern from a commercially available Al material (purity ≧ 99.99%).
[0044]
(3) Production of integrated structure The bonding material shown in Table 2, the aluminum nitride substrate, the heat dissipation component, and the Al circuit were laminated as shown in FIG. This was heated from outside the furnace with a hydraulic uniaxial pressurizing device through a carbon push rod in a direction perpendicular to the surface of the aluminum nitride substrate, and joined. The bonding conditions were as shown in Table 3, and were performed in a vacuum of 4 × 10 ⁻³ Pa (batch furnace) or in N ₂ gas (continuous furnace). In Comparative Example 1, Al plates (thickness 0.4 mm) were bonded to the front and back surfaces of the aluminum nitride substrate, and then bonded to the heat dissipation component with eutectic solder.
[0045]
[Table 2]

[0046]
[Table 3]

[0047]
(4) Evaluation of board-integrated structure The bonded state of the obtained circuit board-integrated structure is observed with an ultrasonic flaw detector (SAT), and a non-bonded portion having a diameter of 1 mm or more or 1% or more is not bonded. What the area part was able to confirm was made into the joining defect. Next, after each sample was subjected to a heat cycle test of 3000 cycles with −40 ° C., 30 minutes → room temperature, 10 minutes → 125 ° C., 30 minutes → room temperature, 10 minutes as one cycle, the appearance was observed and abnormal The presence or absence was confirmed, and the bonding state was examined again by SAT. The results are shown in Table 4.
[0048]
[Table 4]

[0049]
As is clear from the examples and comparative examples, the substrate-integrated structure of the present invention showed a good bonded state. In particular, in Examples 1, 2, and 4, a substrate-integrated structure with no poor bonding is obtained despite the use of a simple continuous furnace. On the other hand, in Comparative Examples 1 to 3, defective products frequently occur after the heat cycle.
[0050]
【The invention's effect】
According to the present invention, a highly reliable board-integrated structure that is lightweight and excellent in heat dissipation is provided. A circuit board that is lightweight and excellent in heat dissipation can be used as a heat dissipation component simply by forming a circuit on the substrate. An integrated structure can be obtained.
[Brief description of the drawings]
FIG. 1 is a view for explaining a stacking method for obtaining a substrate integrated structure according to an embodiment of the present invention and a comparative example.
[Explanation of symbols]
1 Carbon spacer 2 Al
3 Bonding material 4 Aluminum nitride substrate 5 Bonding material 6 Heat dissipation component

Claims (2)

A method of manufacturing a substrate-integrated structure comprising an aluminum nitride substrate having an aluminum or aluminum alloy plate bonded to at least one surface and a heat dissipation component formed by impregnating a silicon carbide based porous material with a metal mainly composed of Al. The X-ray diffraction peak intensity ratio of the surface of the aluminum nitride substrate is 2 ≦ (Y ₂ O ₃ .Al ₂ O ₃ / AlN) × 100 ≦ 17 and (2Y ₂ O ₃ .Al ₂ O ₃ / AlN) ) × 100 ≦ 2, the heat dissipation component is made of an aluminum alloy containing 40 to 70% by volume of silicon carbide and the balance of 4 to 14% by weight of Si, and the thermal conductivity is 160 W / mK or more. in silicon composite, and the said Al to the main surface of the heat radiation member and wherein a metal layer mainly composed is provided over a thickness of 10 [mu] m, the aluminum or aluminum alloy plate And the heat radiating component contains at least one selected from the group consisting of Mg and Cu, Ge, and Si, and through an Al alloy having a liquid phase temperature of 500 to 630 ° C. , N ₂ , A method for manufacturing a substrate-integrated structure capable of continuous bonding processing, characterized in that bonding is performed in a low oxygen atmosphere of H ₂ , an inert gas, and a mixed gas thereof. 2. The method for manufacturing a substrate-integrated structure according to claim 1, wherein the heat dissipating parts and the aluminum nitride substrate are laminated and heated so as to be adjacent to each other.

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